CN108169851A - A kind of polyimides makes the technique that ridge waveguide device planarizes - Google Patents
A kind of polyimides makes the technique that ridge waveguide device planarizes Download PDFInfo
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- CN108169851A CN108169851A CN201810018790.4A CN201810018790A CN108169851A CN 108169851 A CN108169851 A CN 108169851A CN 201810018790 A CN201810018790 A CN 201810018790A CN 108169851 A CN108169851 A CN 108169851A
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- Prior art keywords
- polyimides
- technique
- ridge waveguide
- microwave
- waveguide device
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Optical Integrated Circuits (AREA)
Abstract
The invention discloses the technique that a kind of polyimides makes the planarization of ridge waveguide device, step is as follows：S1, in sample surfaces coating polyimide；S2 cures the polyimides on sample, and the flow of protection nitrogen is 30sccm during curing；S3, the polyimides etching after sample surfaces are cured by microwave resist remover.The present invention performs etching realization planarization using microwave resist remover, and microwave discharge etch rate, ultrahigh in efficiency, ion bombardment damage is minimum, and radiation injury is small, and the electrode inside electric discharge can be covered with insulating materials.Microwave method combination curing process is used in the planarization of polyimide media film by this method, greatly reduces device damage risk and flatening process difficulty.
Description
Technical field
The invention belongs to semiconductor devices to make Photolithography Technology field, and particularly a kind of polyimides makes ridge waveguide
The technique of device planarization.
Background technology
It is higher and higher to the bandwidth requirement of opto-electronic device along with the rapid development of optical communication technology.Not only to optimize
Device architecture will also innovate medium manufacture craft to reduce capacitance.Surface with etching groove or hole usually requires medium landfill
Realize the good making of electrode, such as wavelength 1.3/1.5um ridge waveguide shape HF lasers, it is desirable that in ridge waveguide depth
Landfill polyimides, other places are removed in each 7um raceway grooves on 1.7um or so table tops both sides, which needs to planarize
Technique is realized.
Usually realize that there are three types of methods for planarization：First method is chemical mechanical polishing method, but this method needs
Stringent wafer key and technique, grinding and polishing process and cleaning use and inconvenient；Second method is photoetching alignment knot
The methods of closing wet method removal or coating, this method are related to alignment and wet-treating, and uniformity planarization control requirement is compared
Height, aligning accuracy requirement is also high, and process repeatability is not very good；The third method is dry etching technology, mainly have RIE and
The methods of ICP is etched, such as reactive ion etching RIE（Reactive Ion Etching）, it is by terminating a radio frequency in sample
Power supply makes to be filled with reaction gas in vacuum chamber and occurs glow discharge, and cation accelerates to be formed when passing through plasma sheath pair
Physical reactions occur for the collision of sample, and the active ion and sample of generation chemically react, final to realize etching；Electric induction
Coupled plasma etch ICP（Inductively Coupled Plasma), it is that plasma pair is generated by glow discharge
Sample performs etching.ICP uses dijection frequency power, is used for that ionization is excited to generate plasma all the way.Another way is used for generating partially
Pressure makes ion to sample motion, so as to achieve the purpose that anisotropic etching.Plasma leads in both common etching technics
The shock for accelerating ion pair substrate surface is crossed, the atom sputtering of substrate surface is come out, using the loss of ion energy as cost, is reached
To etching purpose.Such physical reactions can cause sample surfaces not confirmable surface damage and unintentional doping, to device
Part performance impacts.Particularly in planarization process when near interface, need strictly to control etching injury.
Invention content
The technical problem to be solved by the present invention is to existing planar process complexity, it is less reproducible the technical issues of, so as to carry
The technique for making the planarization of ridge waveguide device for a kind of polyimides, the repetition simple for process is at low cost, avoids photoetching process
In cumbersome alignment process and mechanochemistry throw the flow of planarization, it is almost not damaged to key sequence boundary.
In order to solve the above technical problems, the technical solution adopted in the present invention is as follows：
A kind of polyimides makes the technique that ridge waveguide device planarizes, and step is as follows：S1, it is sub- in sample surfaces coating polyamides
Amine；S2 cures the polyimides on sample, and the flow of protection nitrogen is 30sccm during curing；S3 is removed photoresist by microwave
Polyimides after machine cures sample surfaces etches.
In step sl, the polyimides is ZKPI-540 photosensitive polyimides or non-photosensitivity type polyimides.
In step sl, it is coated using sol evenning machine, the thickness after the polyimide curing of coating is to need to fill raceway groove depth
2 ~ 3 times of degree.
In step s 2, during curing, curing oven uses 250 degree of curings 1 of temperature again after using the curing 1 hour of 150 degree of temperature
Hour directly uses 350 degree of temperature to cure 0.5 hour.In step s3, power 50W ~ 120W of microwave resist remover, is passed through
The flow of oxygen is 20sccm ~ 200sccm, and etch period is applied according to gash depth and glue are thick and solid.
The present invention performs etching realization planarization using microwave resist remover, is also one kind of plasma etching, special
The acceleration synchronous and opposite direction with atom generation for the proton in atom is levied, but proton is almost stationary, so not
Kinetic energy loss is generated due to ionic bombardment, oscillation of the electronics in gap obtains enough energy production ionization, and electric discharge does not depend on
In the secondary electron generated on wall and electrode；And chip is in plasma, since the probability of electronic electron collision increases
Add, plasma potential is only under several volts to more than ten volts (slowly increasing with pressure reduction) or even smaller voltage
It can work normally, therefore microwave discharge etch rate, ultrahigh in efficiency, ion bombardment damage is minimum (about several electron-volts),
Radiation injury is small, and the electrode inside electric discharge can be covered with insulating materials.Microwave resist remover is usually predominantly for going photoetching
Glue, this method be incorporated into curing process be used in polyimide media film planarization, greatly reduce device damage analysis and
Flatening process difficulty.
Description of the drawings
In order to illustrate more clearly about the embodiment of the present invention or technical scheme of the prior art, to embodiment or will show below
There is attached drawing needed in technology description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this
Some embodiments of invention, for those of ordinary skill in the art, without creative efforts, can be with
Other attached drawings are obtained according to these attached drawings.
Fig. 1 is double ditch ridge laser sectional views of embodiment 1.
Fig. 2 is the sectional view after double ditch ridge laser coating polyimides of embodiment 1.
Fig. 3 is the sectional view after double ditch ridge laser cure polyimides of embodiment 1.
Fig. 4 is that double ditch ridge lasers of embodiment 1 etch the sectional view after polyimides.
Fig. 5 is the sectional view of the bis- ditch ridged HF lasers of wavelength 1.3/1.5um of embodiment 2.
Fig. 6 is the sectional view after the bis- ditch ridged HF lasers of wavelength 1.3/1.5um of embodiment 2 are filled and led up.
Specific embodiment
Below in conjunction with the attached drawing in the embodiment of the present invention, the technical solution in the embodiment of the present invention is carried out clear, complete
Site preparation describes, it is clear that described embodiment is only part of the embodiment of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, those of ordinary skill in the art are obtained every other under the premise of not making the creative labor
Embodiment shall fall within the protection scope of the present invention.
Embodiment 1：A kind of polyimides makes the technique that ridge waveguide device planarizes, and step is as follows：S1, in sample surfaces
Coating polyimide, the sample is double ditch ridge lasers, as shown in Figure 1, after coating as shown in Figure 2.
S2 cures the polyimides on sample, and the flow of protection nitrogen is 30sccm during curing, the knot after curing
Composition is as shown in Figure 3.
S3, the polyimides etching after sample surfaces are cured by microwave resist remover, the power 50W of microwave resist remover ~
120W, the flow for being passed through oxygen is 20sccm ~ 200sccm, and etch period is applied according to gash depth and glue are thick and solid；As schemed after etching
Shown in 4.
Embodiment 2：A kind of polyimides makes the technique that ridge waveguide device planarizes, with the bis- ditch ridges of wavelength 1.3/1.5um
For shape HF laser, active layer ridged stripe shape mesa width is 2um, and both sides channel width is 7 um, and channel depth is
1.7um, section such as Fig. 5；After implementing present invention process technology, polyimides landfill ridge structure devices part channeling effect cuts open
Face such as Fig. 6.
Operation is as follows：Step 1, the even polyimides of sample surfaces, is coated using sol evenning machine, 5000 revs/min of spin coating machine speed
Clock, the thickness after the polyimide curing of coating are need to fill channel depth 2 ~ 3 times.And ZKPI-540 Photosensitives can be used
Polyimides or non-photosensitivity type polyimides or BCB.
Step 2, sample cures, curing oven corresponding temperature and time, curing oven cured 1 hour using 150 degree of temperature after again
Using the curing 1 hour of 250 degree of temperature or directly using the curing 0.5 hour of 350 degree of temperature, when curing, needs nitrogen to protect, nitrogen
Throughput about 30sccm.
Step 3, the dielectric etches such as the polyimides after sample surfaces are cured by microwave resist remover are done to the greatest extent.Microwave removes photoresist
The power 120W of machine, the flow for being passed through oxygen are 20sccm, and etching duration is 30 minutes.
It is described be only presently preferred embodiments of the present invention, be not intended to limit the invention, it is all the present invention spirit and
Within principle, any modification, equivalent replacement, improvement and so on should all be included in the protection scope of the present invention.
Claims (5)
1. a kind of polyimides makes the technique that ridge waveguide device planarizes, which is characterized in that step is as follows：S1, in sample table
Face coating polyimide；S2 cures the polyimides on sample, and the flow of protection nitrogen is 30sccm during curing；S3,
Polyimides etching after sample surfaces are cured by microwave resist remover.
2. polyimides according to claim 1 makes the technique that ridge waveguide device planarizes, which is characterized in that in step
In S1, the polyimides is ZKPI-540 photosensitive polyimides or non-photosensitivity type polyimides.
3. polyimides according to claim 1 or 2 makes the technique that ridge waveguide device planarizes, which is characterized in that
It in step S1, is coated using sol evenning machine, the thickness after the polyimide curing of coating is need to fill channel depth 2 ~ 3 times.
4. polyimides according to claim 1 makes the technique that ridge waveguide device planarizes, which is characterized in that in step
In S2, during curing, curing oven using after the curing 1 hour of 150 degree of temperature again using temperature 250 degree cure 1 hour or directly adopt
Cured 0.5 hour for 350 degree with temperature.
5. polyimides according to claim 1 makes the technique that ridge waveguide device planarizes, which is characterized in that in step
In S3, power 50W ~ 120W of microwave resist remover, the flow for being passed through oxygen is 20sccm ~ 200sccm, and etch period is according to groove
Depth and glue is thick and solid applies.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810018790.4A CN108169851A (en) | 2018-01-09 | 2018-01-09 | A kind of polyimides makes the technique that ridge waveguide device planarizes |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810018790.4A CN108169851A (en) | 2018-01-09 | 2018-01-09 | A kind of polyimides makes the technique that ridge waveguide device planarizes |
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| Publication Number | Publication Date |
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| CN108169851A true CN108169851A (en) | 2018-06-15 |
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| CN201810018790.4A Pending CN108169851A (en) | 2018-01-09 | 2018-01-09 | A kind of polyimides makes the technique that ridge waveguide device planarizes |
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Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0375902A1 (en) * | 1988-12-16 | 1990-07-04 | International Business Machines Corporation | Method for selectively etching the materials of a bilayer structure |
| CN1141501A (en) * | 1995-04-21 | 1997-01-29 | 日本电气株式会社 | High speed ashing method |
| JP2002128922A (en) * | 2000-10-27 | 2002-05-09 | Toray Ind Inc | Etching method |
| EP1406281A2 (en) * | 2002-10-02 | 2004-04-07 | Electronics And Telecommunications Research Institute | Capacitive micro-electro mechanical switch and method of manufacturing the same |
| CN1956284A (en) * | 2005-10-29 | 2007-05-02 | 深圳飞通光电子技术有限公司 | Ridge waveguide type semiconductor laser and its manufacturing method |
| CN101882756A (en) * | 2010-06-02 | 2010-11-10 | 中国科学院半导体研究所 | Preparation method of trenches of polyimide-embedded syconoid ridge type devices |
| CN102012644A (en) * | 2009-09-04 | 2011-04-13 | 中芯国际集成电路制造(上海)有限公司 | Method for reducing characteristic dimension of photoresist pattern |
| CN103107066A (en) * | 2011-11-10 | 2013-05-15 | 无锡华润上华科技有限公司 | Photoresist removal method and semiconductor production method |
| CN104409624A (en) * | 2014-12-05 | 2015-03-11 | 上海新微技术研发中心有限公司 | packaging method and semiconductor device |
| CN104425212A (en) * | 2013-08-22 | 2015-03-18 | 无锡华润上华半导体有限公司 | Method for flattening coating of polyimide on high-step device |
-
2018
- 2018-01-09 CN CN201810018790.4A patent/CN108169851A/en active Pending
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0375902A1 (en) * | 1988-12-16 | 1990-07-04 | International Business Machines Corporation | Method for selectively etching the materials of a bilayer structure |
| CN1141501A (en) * | 1995-04-21 | 1997-01-29 | 日本电气株式会社 | High speed ashing method |
| JP2002128922A (en) * | 2000-10-27 | 2002-05-09 | Toray Ind Inc | Etching method |
| EP1406281A2 (en) * | 2002-10-02 | 2004-04-07 | Electronics And Telecommunications Research Institute | Capacitive micro-electro mechanical switch and method of manufacturing the same |
| CN1956284A (en) * | 2005-10-29 | 2007-05-02 | 深圳飞通光电子技术有限公司 | Ridge waveguide type semiconductor laser and its manufacturing method |
| CN102012644A (en) * | 2009-09-04 | 2011-04-13 | 中芯国际集成电路制造(上海)有限公司 | Method for reducing characteristic dimension of photoresist pattern |
| CN101882756A (en) * | 2010-06-02 | 2010-11-10 | 中国科学院半导体研究所 | Preparation method of trenches of polyimide-embedded syconoid ridge type devices |
| CN103107066A (en) * | 2011-11-10 | 2013-05-15 | 无锡华润上华科技有限公司 | Photoresist removal method and semiconductor production method |
| CN104425212A (en) * | 2013-08-22 | 2015-03-18 | 无锡华润上华半导体有限公司 | Method for flattening coating of polyimide on high-step device |
| CN104409624A (en) * | 2014-12-05 | 2015-03-11 | 上海新微技术研发中心有限公司 | packaging method and semiconductor device |
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Address after: No. 201, Yanhe Road, Qi Bin District, Hebi, Henan Applicant after: HENAN SHIJIA PHOTONS TECHNOLOGY CO., LTD. Address before: 458030 No. 201 Yanhe Road, Qibin District, Hebi City, Henan Province Applicant before: HENAN SHIJIA PHOTONS TECHNOLOGY CO., LTD. |
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Application publication date: 20180615 |