CN101895060A - Multiband silicon-based microdisk mixing laser device thereof and preparation method thereof - Google Patents
Multiband silicon-based microdisk mixing laser device thereof and preparation method thereof Download PDFInfo
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- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 77
- 239000010703 silicon Substances 0.000 title claims abstract description 77
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 75
- 238000002360 preparation method Methods 0.000 title claims abstract description 21
- 238000002156 mixing Methods 0.000 title claims description 15
- 239000010408 film Substances 0.000 claims abstract description 30
- 229910004298 SiO 2 Inorganic materials 0.000 claims abstract description 23
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 239000010409 thin film Substances 0.000 claims abstract description 7
- 239000003989 dielectric material Substances 0.000 claims abstract description 4
- 238000000034 method Methods 0.000 claims description 50
- 239000007788 liquid Substances 0.000 claims description 14
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- 238000011161 development Methods 0.000 claims description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 7
- 238000001259 photo etching Methods 0.000 claims description 6
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- 238000009826 distribution Methods 0.000 claims description 5
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Abstract
本发明揭示了一种多波段硅基微盘混合激光器及其制备方法，其中激光器的主要结构为形成于硅基底上的微盘微腔集合体，且各微盘表面设有波段可调的增益介质。增益介质为与SiO2微盘基底结合牢固的薄膜介质材料，激光波段由增益介质波段决定；模式位置由SiO2微盘结构尺寸和薄膜自身厚度决定。本发明制作过程基于现代微电子成熟工艺制备而成，该硅基微盘微腔结构，不仅可以作为硅基光源器件，也可以作为硅芯片为基底的光互联通讯、光子计算芯片、硅基传感器、滤波器、探测器的核心元件，拥有高灵敏度、低成本、宽范围、芯片可集成等优点。在腔量子电动力学即微腔限制情况下光与物质相互作用等量子光学和量子信息研究领域也具有重要意义。
The invention discloses a multi-band silicon-based microdisk hybrid laser and a preparation method thereof, wherein the main structure of the laser is a microdisk microcavity assembly formed on a silicon substrate, and each microdisk surface is provided with an adjustable band gain medium. The gain medium is a thin film dielectric material that is firmly combined with the SiO 2 microdisk substrate, and the laser wavelength is determined by the gain medium; the mode position is determined by the structure size of the SiO 2 microdisk and the thickness of the film itself. The manufacturing process of the present invention is prepared based on the mature technology of modern microelectronics. The silicon-based microdisk microcavity structure can not only be used as a silicon-based light source device, but also can be used as a silicon chip-based optical interconnection communication, photon computing chip, silicon-based sensor, The core components of filters and detectors have the advantages of high sensitivity, low cost, wide range, and chip integration. In the case of cavity quantum electrodynamics, that is, the interaction between light and matter under the condition of microcavity confinement, the research fields of quantum optics and quantum information are also of great significance.
Description
Technical field
The present invention relates to a kind of little dish micro-cavity laser and method for making thereof, relate in particular to a kind of structural design and preparation method who is integrated on the silicon, has the silica-based microdisk laser of characteristics such as multiband, pattern is adjustable.
Background technology
Silicon because of it is only second to the reserves of enriching of oxygen element in the earth's crust, with the semiconductor transistor performance of its good stable, has greatly promoted the development of microelectronic chip process industry.Also, human society established solid foundation for marching toward the information age.Following a high direction of stepping on the mole prophesy, is representative with the Intel Company, and the transistor size that the chip unit are can be integrated increases sharply with the surprising speed of doubling in per 18 months, and its arithmetic speed also promotes rapidly.Yet along with reducing of size, original chip fabrication techniques also is faced with increasing challenge, and when channel dimensions during near monoatomic layer, quantum effect will play a role; Recently multi-core technology framework then is in order to solve more and more serious consumption heating problem after littleization of chip component.At foreseeable future, Moore's Law will inevitably be walked to be at the end.Global researcher also can reach higher arithmetic speed, the structural design of low-power consumption more seeking from all angles.A kind of still from the angle of electronics, as Graphene, single-electronic transistor etc.; Another kind of approach also is that Intel is stepping up to research and develop in recent years, utilizes the photon chip design of photon as chip internal transmission information carrier, i.e. the silicon photonic propulsion.Photon have bigger bandwidth and lower power consumption and heating, and its transmission speed has qualitative leap especially with respect to electronics.
Since this century, the research of silicon photonic propulsion has obtained development at full speed, and first silicon-base Raman laser, the optical modulator of GHz, the snowslide germanium silicon photo-detector of GHz are all realized in succession in Intel Company in the world.Other research institutions of the world learn the field at silicon based photon and have also obtained many important achievement.Yet, be subject to the indirect band gap structure of silicon materials itself, make the silica-based active laser of high efficiency is the huge challenge (Raman laser be passive laser, i.e. image intensifer) of pendulum in face of whole world scientist always.
On the other hand, in recent years, also obtained considerable progress for the research of silica-based optical microcavity.High-quality-factor (10 based on little dish microcavity
8) silicon-base miniature ring core microcavity realize in the California Institute of Technology, for new approach has been opened up in the research and development of silica-based high-efficiency laser.As everyone knows: make the three elements of laser, pumping source, resonant cavity, gain media.Caltech's micro-cavity structure provides high-quality structure of resonant cavity for the design of laser.Pumping can be adopted the mode of laser excitation.What need solution is the problem of gain media.2005, California, USA St Babara university adopted the way of blending agent, and promptly preparation III-V family material is successfully prepared silica-based mixing laser as gain media on the silica-based waveguides structure.
Summary of the invention
The problem of the introducing gain media that needs to be resolved hurrily at above-mentioned silicon substrate laser, and the compatibility issue of consideration and modern microelectronics industry and each wave band adaptability widely, purpose of the present invention aims to provide adjustable silica-based little dish mixing laser of a kind of multiband and preparation method thereof.By the gain media of selection different-waveband, and the structural parameters that change little dish microcavity, regulate lasing mode wave band and position, realize that a kind of chip can be integrated, with low cost, that the multiband pattern is adjustable silica-based little dish micro-cavity laser.
The purpose of the above-mentioned silicon substrate laser of the present invention, the technical scheme of its realization is:
Multiband silicon-based microdisk mixing laser device is characterized in that: the primary structure of described laser is the little dish microcavity aggregate that is formed on the silicon base, and each little panel surface is provided with the adjustable gain media of wave band.Wherein this gain media is the thin film dielectrics that combines and be used to realize population inversion and produce light with little dish, film thickness is between 10nm～5 μ m, select for use in the selection with silicon base and combine firm gain medium material, wherein comprise the ZnO film of ultraviolet band and organic Alq film of visible light wave range at least.And the little dish microcavity on this silicon base has the volume discreteness, and its little dish diameter range is between 2 μ m～200 μ m are adjustable, and the microcavity height is between 500nm～50 μ m are adjustable.
The above-mentioned silicon substrate laser preparation method's of the present invention purpose, will realize by following processing step:
I, with the SiO that forms naturally on the silicon chip sample
2Layer pickling removed, and utilizes the SiO of thermal oxidation method in silicon chip sample superficial growth 100nm～5 μ m thickness discrete distribution
2Layer;
II, utilize photoetching development at SiO
2Laminar surface forms the disc mask, and the outer SiO of mask is removed in pickling
2
III, elder generation adopt the vertical etching method of dry method to form the cylindrical mesa of diameter 2 μ m～200 μ m, height 500nm～50 μ m, discrete volume on the silicon chip sample surface, adopt dry method or wet method anisotropic etching method with cylindrical SiO again
2Silicon etching under the table top, the only SiO of reserve part cylinder silicon support
2Disk;
IV, utilize membrane deposition method at SiO
2Disc surfaces prepares the gain media of 10nm～5 μ m;
V, utilize corrosive liquid and deionized water successively silicon chip sample to be carried out etch, cleaning step by step, remove unnecessary mask and corrosive liquid in the silicon chip sample substrate, the liquid level of wherein said corrosive liquid and deionized water does not all reach the silicon chip sample substrate and is lower than SiO
2The height of disk;
VI, the silicon chip sample after cleaning is carried out annealing in process.
Further, membrane deposition method described in the step IV comprises a kind of in PECVD, MOCVD, sputter, thermal evaporation, the spin coating at least.And the method for removing unnecessary film in the silicon chip sample substrate in the step V also comprises a kind of in wet etching, laser ablation and the focused-ion-beam lithography at least.
Implement technical scheme of the present invention, its beneficial effect is presented as:
Owing to can be used as the selection face width of gain medium material, so the present invention can realize the silicon substrate laser that multiband is integrated, by changing SiO
2The physical dimension of little dish can realize that resonance mode energy and stimulated radiation can be flux matched, realizes laser emitting; Its manufacture method is implemented simple and easy, technical maturity, and the repetition rate height effectively reduces cost of manufacture, has industrialization prospect.
Following constipation closes the embodiment accompanying drawing, the specific embodiment of the present invention is described in further detail, so that technical solution of the present invention is easier to understand, grasp.
Description of drawings
Fig. 1 is whole preparation technology's schematic flow sheet of multiband silicon-based microdisk mixing laser device of the present invention.
Embodiment
The problem of the introducing gain media that needs to be resolved hurrily at silicon substrate laser, and the compatibility issue of consideration and modern microelectronics industry and each wave band adaptability widely, the invention provides a kind of practically, prepare the method for the adjustable silica-based little dish micro-cavity laser of multiband based on modern microelectronic technique methods such as photoetching, etching and thin film depositions.By the gain media of selection different-waveband, and the structural parameters that change little dish microcavity, pattern wave band and position regulated.Realize that a kind of chip can be integrated, with low cost, that the multiband pattern is adjustable silica-based little dish micro-cavity laser.
The primary structure of this laser is the little dish microcavity aggregate that is formed on the silicon base.High-quality-factor (10 based on little dish microcavity
8) silicon-base miniature ring core microcavity, for the design of laser provides high-quality structure of resonant cavity.And the present invention makes three elements from laser, proposes to be processed with the adjustable gain media of wave band in each little panel surface.Wherein this gain media is for combine tight and being used to the thin film dielectrics realizing population inversion and produce light with little dish.Difference according to required lasing wave band and mode position, the film thickness of this gain media is optional between 10nm～5 μ m, in gain media film selection on the same silicon chip sample, comprise the ZnO film of ultraviolet band and organic Alq film of visible light wave range at least, every can be at SiO
2The gain medium material of last deposit can be combined in SiO
2On the disk, need not consider the stress problem that produced with the monocrystalline substrate lattice mismatch, form the disk structure of resonant cavity of gain medium material naturally, thereby be implemented in the suprabasil Laser emission of silicon.And the little dish microcavity on this silicon base has the volume discreteness, and its little dish diameter range is between 2 μ m～200 μ m are adjustable, and the microcavity height is between 500nm～50 μ m are adjustable.
As shown in Figure 1, be whole preparation technology's schematic flow sheet of multiband silicon-based microdisk mixing laser device of the present invention.By shown in the figure as seen, its preparation technology is fully based on modern microelectronic technique.
Embodiment one
The HF acid of I, usefulness dilution is with the SiO on silicon chip sample 1 surface
2Layer 2a rinsing is removed;
II, utilize the SiO of the method for thermal oxidation at silicon chip sample 1 superficial growth 100nm
2Layer 2b;
III, utilize photoetching development technology, at SiO
2Layer 2b surface forms disc photoresist mask 3;
The HF acid of IV, utilization dilution is with the SiO outside the photoresist mask 3
2 Layer 2b removes, and realizes figure transfer;
V, utilize the vertical etch silicon method of dry method to carve diameter to be that 2 μ m to 200 mu m ranges do not wait, highly to be the cylindrical mesa that 500nm to 50 mu m range does not wait;
VI, utilize dry method or wet method anisotropic etching technology that most of silicon of SiO2 layer 2b below is carved to go, form ring core microcavity 5 and only reserve part support SiO
2Disk 4;
VII, utilize the thin film deposition means, as one of multiple thin film preparation processes such as PECVD, MOCVD, sputter, thermal evaporation, spin-coating method, the SiO that is preparing
2 Disk 4 surface preparation thickness are the gain media 6 of the ZnO film of ultraviolet band of 10nm discrete distribution or organic Alq film of visible light wave range etc.;
VIII, utilize one of methods such as wet etching, laser ablation, focused-ion-beam lithography that the unnecessary film of little tray bottom is removed, make the corrosive liquid height be lower than little dish height, and just do not have the silicon chip sample bottom, and removed the unnecessary film in bottom, and do not damage little dish 4 upper surface gain media films 6;
IX, use washed with de-ionized water, make the deionized water liquid level be lower than little dish height, and just do not have the silicon chip sample bottom, bottom after-etching alveolar fluid clearance;
X, utilize annealing method, improve gain medium material and SiO
2The contact performance of disc surfaces.
Embodiment two
The HF acid of I, usefulness dilution is with the SiO on silicon chip sample 1 surface
2Layer 2a rinsing is removed;
II, utilize the SiO of the method for thermal oxidation at silicon chip sample 1 superficial growth 5 μ m
2Layer 2b;
III, utilize photoetching development technology, at SiO
2Layer 2b surface forms disc photoresist mask 3;
The HF acid of IV, utilization dilution is with the SiO outside the photoresist mask 3
2 Layer 2b removes, and realizes figure transfer;
V, utilize the vertical etch silicon method of dry method to carve diameter to be that 2 μ m to 200 mu m ranges do not wait, highly to be the cylindrical mesa that 500nm to 50 mu m range does not wait;
VI, utilize dry method or wet method anisotropic etching technology with SiO
2Most of silicon of layer 2b below is carved and is gone, form ring core microcavity 5 and only reserve part support SiO
2Disk 4;
VII, utilize the thin film deposition means, as one of multiple thin film preparation processes such as PECVD, MOCVD, sputter, thermal evaporation, spin-coating method, the SiO that is preparing
2 Disk 4 surface preparation thickness are the gain media 6 of the ZnO film of ultraviolet band of 5 μ m discrete distribution and organic Alq film of visible light wave range etc.;
VIII, utilize one of methods such as wet etching, laser ablation, focused-ion-beam lithography that the unnecessary film of little tray bottom is removed, make the corrosive liquid height be lower than little dish height, and just do not have the silicon chip sample bottom, and removed the unnecessary film in bottom, and do not damage little dish 4 upper surface gain media films 6;
IX, use washed with de-ionized water, make the deionized water liquid level be lower than little dish height, and just do not have the silicon chip sample bottom, bottom after-etching alveolar fluid clearance;
X, utilize annealing method, improve gain medium material and SiO
2The contact performance of disc surfaces.
Embodiment three
The HF acid of I, usefulness dilution is with the SiO on silicon chip sample 1 surface
2Layer 2a rinsing is removed;
II, utilize the SiO of the method for thermal oxidation at silicon chip sample 1 superficial growth 1 μ m
2Layer 2b;
III, utilize photoetching development technology, at SiO
2Layer 2b surface forms disc photoresist mask 3;
The HF acid of IV, utilization dilution is with the SiO outside the photoresist mask 3
2 Layer 2b removes, and realizes figure transfer;
V, to utilize the vertical etch silicon method of dry method to carve diameter be that 2 μ m, 5 μ m, 10 μ m, 50 μ m, 200 μ m do not wait, and highly is the cylindrical mesa that 500nm, 1 μ m, 5 μ m, 10 μ m, 20 μ m, 50 μ m do not wait;
VI, utilize dry method or wet method anisotropic etching technology with SiO
2Most of silicon of layer 2b below is carved and is gone, form ring core microcavity 5 and only reserve part support SiO
2Disk 4;
VII, utilize the thin film deposition means, as one of multiple thin film preparation processes such as PECVD, MOCVD, sputter, thermal evaporation, spin-coating method, the SiO that is preparing
2The gain media 6 of the ZnO film of the ultraviolet band of disk 4 surface preparation 10nm, 100nm, 500nm, 1 μ m, 5 μ m discrete distribution or organic Alq film of visible light wave range etc.;
VIII, utilize one of methods such as wet etching, laser ablation, focused-ion-beam lithography that the unnecessary film of little tray bottom is removed, make the corrosive liquid height be lower than little dish height, and just do not have the silicon chip sample bottom, and removed the unnecessary film in bottom, and do not damage little dish 4 upper surface gain media films 6;
IX, use washed with de-ionized water, make the deionized water liquid level be lower than little dish height, and just do not have the silicon chip sample bottom, bottom after-etching alveolar fluid clearance;
X, utilize annealing method, improve gain medium material and SiO
2The contact performance of disc surfaces.。
The present invention is based on the SiO of conventional microelectronic technique preparation
2Little dish structure can be in the gain medium material of a plurality of wave bands of its surface preparation, as the ZnO film of ultraviolet band, and organic Alq film of visible region etc.Thereby be implemented in the suprabasil Laser emission of silicon.The applicable gain medium material of the present invention is selected face width, can realize multiwave silicon substrate laser; By changing SiO
2The physical dimension of little dish can realize that resonance mode energy and stimulated radiation can be flux matched, realizes that laser emitting is adjustable flexibly; Its manufacture method is implemented simple and easy, technical maturity, and the repetition rate height has reduced the research and development cost of manufacture effectively, has industrialization prospect.
The specific embodiment of the present invention in sum, embodiment only as an illustration, the usefulness of outstanding feature of the present invention and effect, be not to limit diversity execution mode of the present invention with this.Therefore replace formed technical scheme based on the above-mentioned feature of the present invention through simple modification or equivalence in every case, all should be contained within the protection range of present patent application.
Claims (7)
1. multiband silicon-based microdisk mixing laser device, it is characterized in that: the primary structure of described laser is the little dish microcavity aggregate that is formed on the silicon base, and each little panel surface is provided with the adjustable gain media of wave band.
2. multiband silicon-based microdisk mixing laser device according to claim 1 is characterized in that: described gain media is for combining with little dish and being used to realize population inversion and producing the thin film dielectrics of light, and film thickness is between 10nm～5 μ m.
3. multiband silicon-based microdisk mixing laser device according to claim 2 is characterized in that: described gain media comprises the ZnO film of ultraviolet band and organic Alq film of visible light wave range at least.
4. multiband silicon-based microdisk mixing laser device according to claim 1, it is characterized in that: the little dish microcavity on the described silicon base has the volume discreteness, its little dish diameter range is between 2 μ m～200 μ m are adjustable, and the microcavity height is between 500nm～50 μ m are adjustable.
5. the preparation method of the described multiband silicon-based microdisk mixing laser device of claim 1 is characterized in that comprising step:
I, with the SiO that forms naturally on the silicon chip sample
2Layer pickling removed, and utilizes the SiO of thermal oxidation method in silicon chip sample superficial growth 100nm～5 μ m thickness discrete distribution
2Layer;
II, utilize photoetching development at SiO
2Laminar surface forms the disc mask, and the outer SiO of mask is removed in pickling
2
III, elder generation adopt the vertical etching method of dry method to form the cylindrical mesa of diameter 2 μ m～200 μ m, height 500nm～50 μ m, discrete volume on the silicon chip sample surface, adopt dry method or wet method anisotropic etching method with cylindrical SiO again
2Silicon etching under the table top, the only SiO of reserve part cylinder silicon support
2Disk;
IV, utilize membrane deposition method at SiO
2Disc surfaces prepares gain media;
V, utilize corrosive liquid and deionized water successively silicon chip sample to be carried out etch, cleaning step by step, remove unnecessary mask and corrosive liquid in the silicon chip sample substrate, the liquid level of wherein said corrosive liquid and deionized water does not all reach the silicon chip sample substrate and is lower than SiO
2The height of disk;
VI, the silicon chip sample after cleaning is carried out annealing in process.
6. the preparation method of multiband silicon-based microdisk mixing laser device according to claim 5 is characterized in that: membrane deposition method described in the step IV comprises a kind of in PECVD, MOCVD, sputter, thermal evaporation, the spin coating at least.
7. the preparation method of multiband silicon-based microdisk mixing laser device according to claim 5 is characterized in that: the method for removing unnecessary film in the silicon chip sample substrate in the step V also comprises a kind of in laser ablation and the focused-ion-beam lithography at least.
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102718180A (en) * | 2012-06-28 | 2012-10-10 | 中国科学院苏州纳米技术与纳米仿生研究所 | Concentric ring core nano silicon micro-disk micro-cavity device and preparation method thereof |
| CN102829884A (en) * | 2012-09-10 | 2012-12-19 | 清华大学 | High-speed superconducting nanowire single-photon detector (SNSPD) with strong absorption structure and preparation method of high-speed SNSPD |
| CN103708405A (en) * | 2013-11-08 | 2014-04-09 | 南京大学 | On-chip large-dig-angle silicon oxide micro-disc resonant cavity and manufacturing method for same |
| CN108923245A (en) * | 2018-07-27 | 2018-11-30 | 南京大学 | A kind of micro- disk Ramar laser and preparation method thereof |
| CN109545682A (en) * | 2018-11-14 | 2019-03-29 | 复旦大学 | The preparation method of the micro- disk of sige alloy based on silicon substrate |
| CN112309826A (en) * | 2019-07-24 | 2021-02-02 | 中国科学院微电子研究所 | Semiconductor device and manufacturing method and electronic equipment including the same |
| CN113526458A (en) * | 2020-04-16 | 2021-10-22 | 清华大学 | Method for preparing micro-core ring cavity by wet silicon etching |
| CN114336278A (en) * | 2021-11-30 | 2022-04-12 | 南京邮电大学 | A kind of vertical emission ZnO suspended bowl laser and preparation method thereof |
| CN118109277A (en) * | 2024-01-05 | 2024-05-31 | 中国科学院上海微系统与信息技术研究所 | High-precision 3D structure composite material digital PCR chip and preparation method thereof |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050163185A1 (en) * | 2002-10-02 | 2005-07-28 | Vahala Kerry J. | Surface functionalization of micro-resonators |
-
2010
- 2010-06-10 CN CN 201010196468 patent/CN101895060A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050163185A1 (en) * | 2002-10-02 | 2005-07-28 | Vahala Kerry J. | Surface functionalization of micro-resonators |
Non-Patent Citations (2)
| Title |
|---|
| 《Applied Physics Letters》 20040405 X.Liu, ..etal Optically pumped ultraviolet microdisk laser on a silicon substrate 2488页左栏第1段 3 第84卷, 第14期 2 * |
| 《Applied Physics Letters》 20090521 Abdullah Tulek, ..etal Ultralow threshold laser action from toroidal polymer microcavity 附图1、正文第1页左栏第3段至第2页右栏第1段 1-7 第94卷, 2 * |
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