CN114336278A - Vertical-emission ZnO suspension bowl-shaped laser and preparation method thereof - Google Patents
Vertical-emission ZnO suspension bowl-shaped laser and preparation method thereof Download PDFInfo
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- CN114336278A CN114336278A CN202111443872.1A CN202111443872A CN114336278A CN 114336278 A CN114336278 A CN 114336278A CN 202111443872 A CN202111443872 A CN 202111443872A CN 114336278 A CN114336278 A CN 114336278A
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Abstract
The invention discloses a vertical cavity surface laser transmitter with a ZnO suspension bowl-shaped structure and a preparation method thereof, wherein the laser transmitter takes a silicon-based SOI wafer as a carrier and comprises a silicon substrate layer, a silicon dioxide strut layer, a silicon dioxide disc layer and a zinc oxide disc layer which are sequentially arranged from bottom to top; the laser emitter is provided with a plurality of holes which penetrate through the zinc oxide disc layer, the silicon dioxide support column layer and the silicon dioxide layer from top to bottom. The laser emitter has extremely high optical gain and extremely low loss, is beneficial to the integration of optoelectronic devices, has the advantages of high quality, low threshold value and low loss, and the preparation method has the advantages of good manufacturability and high processing precision.
Description
Technical Field
The invention belongs to the technical field of laser, and particularly relates to a vertical cavity surface laser transmitter with a suspended silicon disk structure and a preparation method thereof.
Background
The bowl-shaped laser can change the laser emission direction to make the laser emit vertically, so that a vertical cavity surface laser transmitter (VCSEL) which is easier to couple is prepared. The ZnO vertical cavity surface laser emitter is a novel semiconductor laser with a vertical light emitting structure, and the light emitting wavelength of the ZnO vertical cavity surface laser emitter is a near ultraviolet band. The VCSEL has the advantages of circular symmetric light spots, high coupling efficiency with optical fibers, capability of preparing high-density two-dimensional arrays and the like, and is considered to be an ideal light source in the application fields of next-generation semiconductor illumination, micro projection, full-color display and the like.
The wide direct band gap (3.4eV) and strong exciton binding energy (60meV) of zinc oxide make it an important candidate for short-wave photoelectric functional materials and devices. Over the past decade, great attention has been paid to the ultraviolet photoelectric properties, particularly the laser properties, of such semiconductors.
Therefore, how to realize high-quality and low-loss laser by using the zinc oxide material and the microcavity structure is the problem to be solved by the invention.
Disclosure of Invention
In order to overcome the defects of the prior art, the invention provides the vertical cavity surface laser transmitter with the ZnO suspension bowl-shaped structure and the preparation method thereof, the laser transmitter has extremely high optical gain and extremely low loss, is beneficial to the integration of optoelectronic devices, has the advantages of high quality, low threshold value and low loss, and the preparation method has the advantages of good manufacturability and high processing precision.
According to one aspect of the specification of the invention, a vertical cavity surface laser transmitter with a ZnO suspension bowl-shaped structure is provided, wherein the laser transmitter takes a silicon-based SOI wafer as a carrier and comprises a silicon substrate layer, a silicon dioxide strut layer, a silicon dioxide disk layer and a zinc oxide disk layer which are sequentially arranged from bottom to top; the laser emitter is provided with a plurality of holes which are formed from top to bottom and penetrate through the zinc oxide disc layer, the silicon dioxide support column layer to the silicon dioxide layer; the silicon dioxide disc layer and the zinc oxide disc layer form a bowl-shaped micro-cavity.
The technical scheme has the advantages that the suspended silicon disc micro-cavity with the columnar support and the smooth edge can reduce the bending loss of the micro-cavity and the scattering loss caused by the rough side face, and further the laser transmitter has extremely low loss.
In the technical scheme, the upper surface and the lower surface of the zinc oxide film microcavity are wrapped by the air with low refractive index by suspension, the total internal reflection of light at the microcavity interface of the high-refractive-index semiconductor and the air with low refractive index around the high-refractive-index semiconductor is conducted in a WGM mode, the optical mode in the vertical direction is also strongly limited, the optical loss caused by optical scattering and transmission is greatly reduced by the aid of the WGM conduction action and the optical limitation, and the enough optical gain for maintaining the lasing action can be generated.
In the technical scheme, the micro-cavity of the vertical cavity surface laser transmitter is bowl-shaped, and the bowl-shaped micro-cavity is equivalent to a concave mirror, so that the generated WGM laser can be vertically focused and transmitted.
Further, the silicon dioxide layer and the silicon dioxide disk layer are the result of annealing silicon at high temperatures.
Further, the silicon dioxide support column layer is suspended by BOE.
Further, a zinc oxide disc layer is coated on the silicon dioxide disc layer in a hanging mode.
Further, the zinc oxide disc layer on the silicon dioxide disc layer is covered by adopting a crystal growth technology MBE.
According to an aspect of the present disclosure, there is provided a method for preparing a vertical cavity surface laser emitter with a ZnO suspension bowl-shaped structure, including the following steps:
spin-coating a photoresist on the surface of the silicon-based SOI wafer, and defining a disc structure on the spin-coated photoresist layer;
etching the silicon layer to the silicon dioxide support column layer by taking the photoresist as a mask;
suspending the etched wafer in BOE to obtain a silicon dioxide pillar layer;
carrying out high-temperature annealing to obtain a silicon dioxide layer and a silicon dioxide disc layer;
and (4) coating zinc oxide on the silicon dioxide disc layer in a suspension manner to obtain a zinc oxide disc layer.
According to the technical scheme, the ZnO suspension bowl-shaped microcavity is prepared by utilizing the processes of optical lithography, RIE etching and etching of silicon dioxide by using a hydrofluoric acid and ammonia water mixed solution, and the ZnO suspension bowl-shaped microcavity which is supported by a column and has a smooth edge is obtained by reasonably designing the process steps including etching the shape of a template, so that the bending loss of the microcavity and the scattering loss caused by rough side surfaces are reduced.
Further, a zinc oxide disk layer is covered on the silicon dioxide disk layer by adopting molecular beam epitaxy.
Compared with the prior art, the invention has the beneficial effects that:
the ZnO suspension bowl-shaped microcavity with the columnar support and the smooth edge can reduce the bending loss of the microcavity and the scattering loss caused by rough side surfaces, so that the laser emitter has extremely low loss as a whole.
The invention makes the upper and lower surfaces of the zinc oxide film micro-cavity wrapped by the air with low refractive index by 'suspending', the total internal reflection of the light at the micro-cavity interface of the high refractive index semiconductor and the air with low refractive index around the high refractive index semiconductor is conducted in WGM form, the optical mode in the vertical direction is also strongly limited, the WGM conduction action and the optical limitation greatly reduce the optical loss caused by optical scattering and transmission, and can generate enough optical gain for maintaining the lasing action.
The invention designs a technical method and a physical process for researching the improvement of WGM ultraviolet laser performance through a unique bowl-shaped ZnO suspension micro-cavity, and designs and optimizes a WGM laser from the aspects of directional focusing emission, mode selection, Q value improvement and the like of laser.
Drawings
Fig. 1 is a side view of a vertical cavity surface laser emitter of a ZnO suspension bowl structure according to an embodiment of the present invention.
Fig. 2 is a top view of a vertical cavity surface laser emitter with a ZnO suspension bowl structure according to an embodiment of the present invention.
Fig. 3 is a process flow diagram of a ZnO suspension bowl-shaped vertical cavity surface laser emitter according to an embodiment of the present invention.
In the figure: the silicon substrate layer 1, the silicon dioxide layer 2, the silicon dioxide pillar layer 3, the silicon dioxide disc layer 4 and the zinc oxide disc layer 5.
Detailed Description
The technical solutions of the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings, and it is to be understood that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments of the present invention without any inventive step, are within the scope of the present invention.
In the present invention, unless otherwise expressly stated or limited, "above" or "below" a first feature means that the first and second features are in direct contact, or that the first and second features are not in direct contact but are in contact with each other via another feature therebetween. Also, the first feature being "on," "above" and "over" the second feature includes the first feature being directly on and obliquely above the second feature, or merely indicating that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature includes the first feature being directly under and obliquely below the second feature, or simply meaning that the first feature is at a lesser elevation than the second feature.
The invention provides a vertical cavity surface laser transmitter with a ZnO suspension bowl-shaped structure, which designs and prepares a ZnO suspension bowl-shaped micro-cavity by utilizing an advanced micro-nano processing technology, researches a technical method and a physical process for improving the performance of WGM ultraviolet laser by a unique bowl-shaped zinc oxide suspension micro-cavity, and designs and optimizes a WGM laser from the aspects of directional focusing emission, mode selection, Q value improvement and the like of the laser.
The laser takes a silicon-based SOI wafer as a carrier, and sequentially comprises a silicon substrate layer, a silicon dioxide strut layer, a silicon dioxide disk layer and a zinc oxide disk layer from bottom to top.
The silicon dioxide disc layer and the zinc oxide disc layer form a bowl-shaped micro-cavity which is equivalent to a concave mirror and can enable the generated WGM laser to be vertically focused and emitted.
The silicon dioxide layer and the silicon dioxide disk layer are the result of annealing silicon at high temperatures. The silicon dioxide support column layer is obtained by suspending BOE.
And a zinc oxide disc layer is coated on the silicon dioxide disc layer in a suspending way. The zinc oxide disc layer is covered on the silicon dioxide disc layer, the process is simple, high-quality low-threshold laser can be easily obtained, the zinc oxide disc layer has high refractive index and smooth surface, and therefore effective formation of a total internal reflection optical gain loop is guaranteed, and loss caused by optical scattering and transmission is greatly reduced.
Further, the zinc oxide disc layer on the silicon dioxide disc layer is covered by adopting a crystal growth technology MBE.
The invention provides a method for preparing a vertical cavity surface laser emitter of a suspension silicon disk structure, which is used for preparing the vertical cavity surface laser emitter of the suspension silicon disk structure, wherein the specific parameters of each layer of material are that the thickness of a silicon substrate layer 1 is 750um, the thickness of a silicon dioxide layer 2 is 2um, and the thickness of a top layer silicon disk is about 240 nm.
The preparation process comprises the following steps:
the first step is as follows: ultrasonically cleaning a purchased silicon substrate SOI wafer by acetone, absolute ethyl alcohol and deionized water in sequence, and then drying by using nitrogen; photoresist AZ-5214 was spin coated on the front side of the wafer using a spin coater at 4000 rpm for 40s (photoresist thickness 1.5 μm).
The second step is that: using optical lithography, a pattern of a disk structure was defined on the spin-coated photoresist layer, model MA 6.
The third step: and etching the silicon layer to the silicon dioxide strut layer 3 by adopting RIE etching technology and taking the photoresist as a mask, and finally removing the residual photoresist.
The fourth step: and (3) putting the wafer into a prepared mixed solution of ammonia water and hydrofluoric acid, suspending BOE for 30s to obtain the silicon dioxide support column layer 3.
The fifth step: the wafer is annealed at high temperature, so that the silicon layer with the thickness of 240nm is converted into a silicon dioxide layer, and a silicon dioxide layer 2 (after the material of the lowermost silicon layer is annealed at high temperature, the silicon layer with the thickness of 240nm on the surface is heated to be chemically changed and converted into silicon dioxide to form the silicon dioxide layer) and a silicon dioxide disc layer 4 (similar to the forming principle of the silicon dioxide layer 2, the uppermost thinner silicon layer is converted into the silicon dioxide disc layer 4 after high temperature) are obtained.
And a sixth step: and covering zinc oxide on the surface of the silicon dioxide disc layer by adopting a molecular beam epitaxy technology to obtain a zinc oxide disc layer 5.
Finally, it should be noted that: the above examples are only intended to illustrate the technical solution of the present invention, but not to limit it; although the present invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some or all of the technical features may be equivalently replaced; and the modifications or the substitutions do not make the essence of the corresponding technical solutions deviate from the technical solutions of the embodiments of the present invention.
Claims (7)
1. A vertical cavity surface laser transmitter with a ZnO suspension bowl-shaped structure is characterized in that a silicon-based SOI wafer is taken as a carrier of the laser transmitter, and the laser transmitter comprises a silicon substrate layer (1), a silicon dioxide layer (2), a silicon dioxide strut layer (3), a silicon dioxide disc layer (4) and a zinc oxide disc layer (5) which are sequentially arranged from bottom to top; the laser emitter is provided with a plurality of holes which are formed from top to bottom and penetrate through the zinc oxide disc layer (5), the silicon dioxide disc layer (4), the silicon dioxide strut layer (3) to the silicon dioxide layer (2); the silicon dioxide disc layer (4) and the zinc oxide disc layer (5) form a bowl-shaped micro-cavity.
2. The ZnO suspension bowl-shaped vertical cavity surface laser emitter according to claim 1, characterized in that the silicon dioxide layer (2) and the silicon dioxide disc layer (4) are the result of annealing of silicon in high temperature.
3. The ZnO suspension bowl-shaped vertical cavity surface laser emitter according to claim 1, wherein the silica pillar layer (3) is suspended with BOE.
4. The ZnO suspension bowl-shaped vertical cavity surface laser emitter according to claim 1, characterized in that the silica disc layer (4) is coated with a zinc oxide disc layer (5) in a suspended manner.
5. The ZnO suspension bowl-shaped vertical cavity surface laser emitter according to claim 1, characterized in that the zinc oxide disc layer (5) on the silicon dioxide disc layer (4) is covered with crystal growth technique MBE.
6. A method for preparing a vertical cavity surface laser emitter of the suspension silicon disk structure of any one of claims 1 to 5, which comprises the following steps:
spin-coating a photoresist on the surface of the silicon-based SOI wafer, and defining a disc structure on the spin-coated photoresist layer;
etching the silicon layer to the silicon dioxide support column layer by taking the photoresist as a mask;
suspending the etched wafer by BOE to obtain a silicon dioxide pillar layer (3);
carrying out high-temperature annealing to obtain a silicon dioxide layer (2) and a silicon dioxide disc layer (4);
and (3) coating zinc oxide on the silicon dioxide disc layer (4) in a suspension manner to obtain a zinc oxide disc layer (5).
7. The method for preparing a vertical cavity surface laser emitter with a ZnO suspension bowl-shaped structure according to claim 6, characterized in that a zinc oxide disc layer (5) is covered on the silicon dioxide disc layer (4) by molecular beam epitaxy.
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2021
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