CN114336278B - Vertical cavity surface laser emitter with ZnO suspension bowl-shaped structure and preparation method thereof - Google Patents
Vertical cavity surface laser emitter with ZnO suspension bowl-shaped structure and preparation method thereof Download PDFInfo
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- CN114336278B CN114336278B CN202111443872.1A CN202111443872A CN114336278B CN 114336278 B CN114336278 B CN 114336278B CN 202111443872 A CN202111443872 A CN 202111443872A CN 114336278 B CN114336278 B CN 114336278B
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Abstract
The invention discloses a vertical cavity surface laser transmitter with a ZnO suspension bowl-shaped structure and a preparation method thereof, wherein the laser transmitter takes a silicon-based SOI wafer as a carrier and comprises a silicon substrate layer, a silicon dioxide pillar layer, a silicon dioxide disc layer and a zinc oxide disc layer which are sequentially arranged from bottom to top; the laser emitter is provided with a plurality of holes which penetrate through the zinc oxide disc layer, the silicon dioxide disc layer and the silicon dioxide pillar layer from top to bottom until reaching the silicon dioxide layer. The laser transmitter has the advantages of extremely high optical gain, extremely low loss, high quality, low threshold value and low loss, is beneficial to the integration of optoelectronic devices, and has the advantages of good manufacturability and high processing precision.
Description
Technical Field
The invention belongs to the technical field of lasers, and particularly relates to a vertical cavity surface laser emitter with a ZnO suspension bowl-shaped structure and a preparation method thereof.
Background
The bowl-shaped laser can change the laser emission direction to vertically emit, so that a vertical cavity surface laser emitter (VCSEL) which is easier to couple is prepared. The ZnO vertical cavity surface laser emitter is a novel semiconductor laser with a vertical light emitting structure, and the light emitting wavelength of the ZnO vertical cavity surface laser emitter is near ultraviolet band. VCSEL has the advantages of circular symmetrical light spot, high coupling efficiency with optical fiber, capability of preparing high-density two-dimensional arrays and the like, and is considered as an ideal light source in the application fields of next-generation semiconductor illumination, micro-projection, full-color display and the like.
The wide direct band gap (3.4 eV) and the strong exciton binding energy (60 meV) of zinc oxide make it an important candidate for shortwave photoelectric functional materials and devices. Over the past decade, great attention has been paid to the uv-light and especially the laser characteristics of such semiconductors.
Therefore, how to realize high quality and low loss lasers using zinc oxide materials and microcavity structures would be a problem to be solved by the present invention.
Disclosure of Invention
In order to overcome the defects in the prior art, the invention provides the vertical cavity surface laser transmitter with the ZnO suspension bowl-shaped structure and the preparation method thereof, wherein the laser transmitter has the advantages of extremely high optical gain and extremely low loss, is beneficial to the integration of optoelectronic devices, has the advantages of high quality, low threshold value and low loss, and has the advantages of good manufacturability and high processing precision.
According to one aspect of the specification, a vertical cavity surface laser transmitter with a ZnO suspension bowl-shaped structure is provided, wherein the laser transmitter takes a silicon-based SOI wafer as a carrier and comprises a silicon substrate layer, a silicon dioxide pillar layer, a silicon dioxide disc layer and a zinc oxide disc layer which are sequentially arranged from bottom to top; the laser emitter is provided with a plurality of holes which penetrate through the zinc oxide disc layer, the silicon dioxide disc layer and the silicon dioxide pillar layer from top to bottom until reaching the silicon dioxide layer; the silicon dioxide disc layer and the zinc oxide disc layer form a bowl-shaped microcavity.
The technical scheme has the suspended silicon disc microcavity which is supported in the columnar mode and has the smooth edge, bending loss of the microcavity and scattering loss caused by rough side surfaces can be reduced, and therefore the laser transmitter is enabled to be extremely low in loss as a whole.
In the technical scheme, the upper surface and the lower surface of the zinc oxide film microcavity are wrapped by air with low refractive index in a suspended manner, light rays are conducted in a WGM mode by total internal reflection at the microcavity interface of the semiconductor with high refractive index and the air with low refractive index around the semiconductor, and optical modes in the vertical direction are also strongly limited.
In the technical scheme, the microcavity of the vertical cavity surface laser transmitter is bowl-shaped, and the bowl-shaped microcavity is equivalent to a concave mirror, so that the generated WGM laser can be vertically focused and transmitted.
Further, the silicon dioxide layer and the silicon dioxide disk layer are caused by annealing silicon at high temperature.
Further, the silicon dioxide pillar layer is obtained by suspending the BOE.
Further, the silica disc layer is suspended with a zinc oxide disc layer.
Further, the zinc oxide disc layer on the silicon dioxide disc layer is covered by using a crystal growth technology MBE.
According to one aspect of the specification, the invention provides a preparation method of the vertical cavity surface laser emitter with the ZnO suspension bowl-shaped structure, which comprises the following steps:
spin-coating photoresist on the surface of a silicon-based SOI wafer, and defining a disc structure on the spin-coated photoresist layer;
etching the silicon layer to the silicon dioxide pillar layer by taking the photoresist as a mask;
BOE suspending is carried out on the etched wafer to obtain a silicon dioxide pillar layer;
gao Wentui firing to obtain a silica layer and a silica disc layer;
and (3) coating zinc oxide on the silicon dioxide disc layer in a suspension manner to obtain a zinc oxide disc layer.
According to the technical scheme, the ZnO suspension bowl-shaped microcavity is prepared by utilizing the photoetching and RIE etching processes and the silicon dioxide etching process by using the mixed solution of hydrofluoric acid and ammonia water, and the ZnO suspension bowl-shaped microcavity supported by the columnar and smooth in edge is obtained through reasonably designed process steps including the shape of an etching template, so that the bending loss of the microcavity and the scattering loss caused by rough side surfaces are reduced.
Further, a zinc oxide disk layer is coated on the silicon dioxide disk layer by molecular beam epitaxy.
Compared with the prior art, the invention has the beneficial effects that:
the ZnO suspension bowl-shaped microcavity with columnar support and smooth edges can reduce bending loss of the microcavity and scattering loss caused by rough side surfaces, so that the whole laser emitter has extremely low loss.
The invention makes the upper and lower surfaces of the zinc oxide film microcavity wrapped by the air with low refractive index through suspending, the light is conducted in the form of WGM by the total internal reflection at the microcavity interface of the semiconductor with high refractive index and the air with low refractive index around the semiconductor, the optical mode in the vertical direction is also limited strongly, the WGM conducting effect and optical limitation greatly reduce the optical loss caused by optical scattering and transmission, and can generate enough optical gain for maintaining the lasing effect.
The invention designs and optimizes the WGM laser from the angles of directional focusing emission, mode selection and Q value improvement of laser through a unique bowl-shaped ZnO suspension microcavity research on the technical method and physical process of the performance improvement of the WGM ultraviolet laser.
Drawings
Fig. 1 is a side view of a vertical facet laser transmitter of a ZnO suspension bowl structure according to an embodiment of the present invention.
Fig. 2 is a top view of a vertical facet laser transmitter of ZnO suspension bowl structure according to an embodiment of the present invention.
Fig. 3 is a process flow diagram of a vertical cavity surface laser transmitter of a ZnO suspension bowl structure according to an embodiment of the present invention.
In the figure: a silicon substrate layer 1, a silicon dioxide layer 2, a silicon dioxide pillar layer 3, a silicon dioxide disc layer 4 and a zinc oxide disc layer 5.
Description of the embodiments
The following description of the embodiments of the present invention will be made in detail and with reference to the accompanying drawings, wherein it is apparent that the embodiments described are only some, but not all embodiments of the present invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to fall within the scope of the invention.
In the present invention, unless expressly stated or limited otherwise, a first feature "above" or "below" a second feature may include both the first and second features being in direct contact, as well as the first and second features not being in direct contact but being in contact with each other through additional features therebetween. Moreover, a first feature being "above," "over" and "on" a second feature includes the first feature being directly above and obliquely above the second feature, or simply indicating that the first feature is higher in level than the second feature. The first feature being "under", "below" and "beneath" the second feature includes the first feature being directly under and obliquely below the second feature, or simply means that the first feature is less level than the second feature.
The invention provides a vertical cavity surface laser transmitter with a ZnO suspension bowl-shaped structure, which designs and prepares a ZnO suspension bowl-shaped microcavity by utilizing an advanced micro-nano processing technology, and designs and optimizes the WGM laser from the angles of directional focusing emission, mode selection, Q value improvement and the like of laser by researching the technical method and physical process of the improvement of the performance of the WGM ultraviolet laser through a unique bowl-shaped zinc oxide suspension microcavity.
The laser uses a silicon-based SOI wafer as a carrier, and comprises a silicon substrate layer, a silicon dioxide pillar layer, a silicon dioxide disc layer and a zinc oxide disc layer from bottom to top.
The silicon dioxide disc layer and the zinc oxide disc layer form a bowl-shaped microcavity, and the bowl-shaped microcavity is equivalent to a concave mirror, so that the generated WGM laser can be vertically focused and emitted.
The silicon dioxide layer and the silicon dioxide disc layer are caused by annealing silicon at high temperature. The silicon dioxide pillar layer is obtained by suspending BOE.
The silica disc layer is coated with a zinc oxide disc layer in a suspension manner. The zinc oxide disc layer is covered on the silicon dioxide disc layer, the process is simple, high-quality low-threshold laser is easy to obtain, the zinc oxide disc layer has higher refractive index and smooth surface, the effective formation of the total internal reflection optical gain loop is ensured, and the loss caused by optical scattering and transmission is greatly reduced.
Further, the zinc oxide disc layer on the silicon dioxide disc layer is covered by using a crystal growth technology MBE.
The invention provides a method for preparing a vertical cavity surface laser transmitter with a suspended silicon disk structure, which is used for preparing the vertical cavity surface laser transmitter with the suspended silicon disk structure, wherein specific parameters of each layer of material are that the thickness of a silicon substrate layer 1 is 750um, the thickness of a silicon dioxide layer 2 is 2um, and the thickness of a top silicon disk is about 240nm.
The preparation process is as follows:
the first step: sequentially ultrasonically cleaning a purchased silicon substrate SOI wafer by using acetone, absolute ethyl alcohol and deionized water, and then drying by using nitrogen; photoresist AZ-5214 was spin coated on the front side of the wafer using a spin coater at 4000 rpm for 40s (photoresist thickness 1.5 microns).
And a second step of: a pattern of a disc structure is defined on the spin-coated photoresist layer by adopting an optical photoetching technology, and the model of a photoetching machine is MA6.
And a third step of: and etching the silicon layer to the silicon dioxide pillar layer 3 by adopting an RIE etching technology and taking the photoresist as a mask, and finally removing the residual photoresist.
Fourth step: and placing the wafer into a prepared mixed solution of ammonia water and hydrofluoric acid, and suspending the wafer for 30s to obtain the silicon dioxide pillar layer 3.
Fifth step: the wafer was annealed at high temperature to convert the 240nm thick silicon layer to a silicon dioxide layer, resulting in a silicon dioxide layer 2 (the lowermost silicon layer material after being subjected to high Wen Tuihuo, the 240nm thick silicon layer on the surface was chemically transformed to silicon dioxide to form a silicon dioxide layer) and a silicon dioxide disk layer 4 (the uppermost thinner silicon layer after being subjected to high temperature becomes a silicon dioxide disk layer 4, similar to the principle of forming a silicon dioxide layer 2).
Sixth step: and (5) covering zinc oxide on the surface of the silicon dioxide disc layer by adopting a molecular beam epitaxy technology to obtain a zinc oxide disc layer 5.
Finally, it should be noted that: the above embodiments are only for illustrating the technical solution of the present invention, and are not limiting; although the invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some or all of the technical features thereof can be replaced with equivalents; these modifications or substitutions do not depart from the essence of the corresponding technical solutions from the technical solutions of the embodiments of the present invention.
Claims (7)
1. The vertical cavity surface laser transmitter with the ZnO suspension bowl-shaped structure is characterized in that the laser transmitter takes a silicon-based SOI wafer as a carrier and comprises a silicon substrate layer (1), a silicon dioxide layer (2), a silicon dioxide pillar layer (3), a silicon dioxide disc layer (4) and a zinc oxide disc layer (5) which are sequentially arranged from bottom to top; the laser emitter is provided with a plurality of holes which penetrate through the zinc oxide disc layer (5), the silicon dioxide disc layer (4) and the silicon dioxide pillar layer (3) from top to bottom until reaching the silicon dioxide layer (2); the silicon dioxide disc layer (4) and the zinc oxide disc layer (5) form a bowl-shaped microcavity, wherein the thickness of the silicon substrate layer (1) is 750um, the thickness of the silicon dioxide layer (2) is 2um, and the thickness of the top silicon disc is 240nm.
2. A vertical cavity surface laser emitter of ZnO suspension bowl structure according to claim 1, characterized in that the silicon dioxide layer (2) and silicon dioxide disk layer (4) are caused by annealing of silicon at high temperature.
3. The vertical cavity surface laser transmitter of a ZnO suspension bowl structure according to claim 1, wherein the silicon dioxide pillar layer (3) is suspended by a BOE.
4. The vertical cavity surface laser transmitter of the ZnO suspension bowl structure according to claim 1, wherein the silicon dioxide disc layer (4) is coated with a zinc oxide disc layer (5) in a suspension mode.
5. The ZnO suspension bowl structured vertical cavity surface laser emitter according to claim 1, wherein the zinc oxide disk layer (5) on the silicon dioxide disk layer (4) is covered with a crystal growth technique MBE.
6. A method of making a vertical cavity surface laser transmitter of a floating bowl configuration according to any one of claims 1-5, comprising the steps of:
spin-coating photoresist on the surface of a silicon-based SOI wafer, and defining a disc structure on the spin-coated photoresist layer;
etching the silicon layer to the silicon dioxide pillar layer by taking the photoresist as a mask;
BOE suspending is carried out on the etched wafer to obtain a silicon dioxide pillar layer (3);
gao Wentui fire to obtain a silicon dioxide layer (2) and a silicon dioxide disc layer (4);
and (3) coating zinc oxide on the silicon dioxide disc layer (4) in a suspension manner to obtain a zinc oxide disc layer (5).
7. The method for manufacturing a vertical cavity surface laser emitter with a ZnO suspension bowl structure according to claim 6, wherein a zinc oxide disc layer (5) is covered on a silicon dioxide disc layer (4) by adopting molecular beam epitaxy.
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101512754A (en) * | 2006-07-28 | 2009-08-19 | 奈米系统股份有限公司 | Methods and devices for forming nanostructure monolayers and devices including such monolayers |
| CN101895060A (en) * | 2010-06-10 | 2010-11-24 | 中国科学院苏州纳米技术与纳米仿生研究所 | Multiband silicon-based microdisk mixing laser device thereof and preparation method thereof |
| JP2012216742A (en) * | 2011-03-30 | 2012-11-08 | Sony Corp | Multi-wavelength semiconductor laser element |
| WO2019152462A1 (en) * | 2018-01-31 | 2019-08-08 | Lumileds Llc | Transparent conducting film or coating on a lens that serves as an interlock on a semiconductor laser module |
| CN111262132A (en) * | 2018-11-30 | 2020-06-09 | 中国科学院半导体研究所 | III-V family/silicon material slotting bonded laser structure and method thereof |
| CN113708220A (en) * | 2021-07-27 | 2021-11-26 | 南京邮电大学 | Quantum dot micro laser and preparation method thereof |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7279751B2 (en) * | 2004-06-21 | 2007-10-09 | Matsushita Electric Industrial Co., Ltd. | Semiconductor laser device and manufacturing method thereof |
-
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Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101512754A (en) * | 2006-07-28 | 2009-08-19 | 奈米系统股份有限公司 | Methods and devices for forming nanostructure monolayers and devices including such monolayers |
| CN101895060A (en) * | 2010-06-10 | 2010-11-24 | 中国科学院苏州纳米技术与纳米仿生研究所 | Multiband silicon-based microdisk mixing laser device thereof and preparation method thereof |
| JP2012216742A (en) * | 2011-03-30 | 2012-11-08 | Sony Corp | Multi-wavelength semiconductor laser element |
| WO2019152462A1 (en) * | 2018-01-31 | 2019-08-08 | Lumileds Llc | Transparent conducting film or coating on a lens that serves as an interlock on a semiconductor laser module |
| CN111262132A (en) * | 2018-11-30 | 2020-06-09 | 中国科学院半导体研究所 | III-V family/silicon material slotting bonded laser structure and method thereof |
| CN113708220A (en) * | 2021-07-27 | 2021-11-26 | 南京邮电大学 | Quantum dot micro laser and preparation method thereof |
Non-Patent Citations (1)
| Title |
|---|
| 光泵浦Si衬底GaN基回音壁模式微盘谐振腔激光器;钟昌明等;《半导体光电》;第38卷(第5期);第639~642页 * |
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