CN113526458A - Method for preparing micro-core ring cavity by wet silicon etching - Google Patents
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
- B81C1/00523—Etching material
- B81C1/00531—Dry etching
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
- B81C1/00523—Etching material
- B81C1/00539—Wet etching
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
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Abstract
一种湿法刻硅制备微芯环腔的方法，步骤如下：取一片硅片，硅片表面为二氧化硅氧化层，使用光刻和氢氟酸刻蚀的方法，在硅片表面得到覆盖有光刻胶的二氧化硅圆盘图形；其次使用氢氟酸‑硝酸混合溶液作为刻蚀溶液对得到的覆盖有光刻胶的二氧化硅圆盘图形进行湿法刻蚀，得到微盘腔；最后将微盘腔表面光刻胶去除，并使用激光器对其进行热回流，完成微芯环腔的制备。本发明使用氢氟酸‑硝酸刻蚀替代了制备流程中的干法刻蚀，提高了各向同性，使得该刻蚀方法适用于超高品质微芯环腔的制备，在1550nm波段实现了108以上的品质因子，这与相关报道中的品质因子相当。本发明同时还具备成本低、刻蚀设备简单、维护容易、对温湿度鲁棒性好等优点。
A method for preparing a micro-core ring cavity by wet etching silicon, the steps are as follows: take a silicon wafer, the surface of the silicon wafer is a silicon dioxide oxide layer, and the surface of the silicon wafer is covered by the methods of photolithography and hydrofluoric acid etching There is a silicon dioxide disc pattern with photoresist; secondly, a hydrofluoric acid-nitric acid mixed solution is used as an etching solution to wet-etch the obtained silicon dioxide disc pattern covered with photoresist to obtain a microdisc cavity; Finally, the photoresist on the surface of the micro-disk cavity is removed, and a laser is used to thermally reflow it to complete the preparation of the micro-core ring cavity. The invention uses hydrofluoric acid-nitric acid etching to replace the dry etching in the preparation process, improves the isotropy, makes the etching method suitable for the preparation of ultra-high-quality micro-core ring cavity, and achieves 10 in the 1550nm waveband. The quality factor above 8 , which is comparable to the quality factor in related reports. The invention also has the advantages of low cost, simple etching equipment, easy maintenance, good robustness to temperature and humidity, and the like.
Description
Technical Field
The invention relates to the field of micro-nano optical devices and the field of micro-processing manufacturing of semiconductor silicon, in particular to a method for preparing a micro-core ring cavity by wet silicon etching.
Background
The whispering gallery mode optical microcavity has a high Quality factor (Q) and a small mode volume, is an ideal platform for researching the interaction between light and a substance, and has very important application in the fields of quantum information processing, nonlinear optics, laser sensing, optomechanics and the like. The types of whispering gallery mode optical microcavities are many, such as a micro-core annular cavity, a micro-sphere cavity, a micro-bubble cavity and the like, wherein the optical modes of the micro-core annular cavity are distributed sparsely, are easier to control and are very common in application.
Isotropic xenon difluoride (XeF)2) Etching is first used to form silicon pillars to prepare the micro core ring cavities, and subsequently, methods of preparing the micro core ring cavities using Reactive Ion Etching (RIE) have emerged. XeF is currently widely used in the art2And RIE method to prepare ultra-high quality micro-core ring cavity: XeF is used by multiple subject groups, such as the California college of California, the university of St.Louis Washington, the university of southern California, the university of Chongqing, the university of Beijing, and the university of Nanjing2The method of (1) is used for preparing the micro-core ring cavity, and RIE etching method is used for preparing the micro-core ring cavity by a plurality of subject groups such as Turkish Birken university, Wisconsin university, Madison university, Japan Kyoto university, and the like.
Research on these two methods indicates that isotropic silicon etching is essential in the process, and the quality factor of the samples prepared by them can reach 108Above, there are disadvantages, one is that these two methods require large etching equipment and thus are expensive; the other is that the etching equipment uses complex systems such as vacuum, gas valve, etc., and is relatively difficult to maintain. The preparation of the micro-core ring cavity is an indispensable step in basic research and engineering application, and the demand for preparing the ultra-high quality micro-core ring cavity in the basic and application research is continuously promoted at present. Therefore, the preparation method of the ultra-high quality micro-core ring cavity with low cost and easy maintenance has very wide application prospect.
Disclosure of Invention
The invention provides a method for preparing a micro-core ring cavity by wet silicon etching, which selects reasonable HF + HNO3Proportioning, adjusting parameters in the process and improving the isotropy of etching so as to obtain a higher quality factor. Allowing passage of HF + HNO at room temperature3The etching preparation of the ultra-high quality micro-core ring cavity is simple and convenient.
The invention provides a method for preparing a micro-core ring cavity by wet silicon etching, which comprises the following steps:
s1: taking a silicon wafer, wherein the surface of the silicon wafer is a silicon dioxide oxide layer, and obtaining a silicon dioxide disc graph covered with photoresist on the surface of the silicon wafer by using a photoetching and hydrofluoric acid etching method;
s2: performing wet etching on the silicon dioxide disc pattern covered with the photoresist obtained in the step S1 by using a hydrofluoric acid-nitric acid mixed solution as an etching solution to obtain a micro disc cavity;
s3: and removing the photoresist on the surface of the microdisk cavity, and performing thermal reflux on the microdisk cavity by using a laser to finish the preparation of the microchip ring cavity.
Optionally, the method for preparing the micro core ring cavity by wet etching of silicon consists of the steps.
In the method for preparing the micro-core ring cavity by wet silicon etching, the silicon wafer is a monocrystalline silicon wafer;
in the method for preparing the micro-core ring cavity by wet silicon etching, the resistivity of the silicon wafer is 0.01-0.02 omega cm.
In the method for preparing the micro-core ring cavity by wet silicon etching, provided by the invention, the silicon wafer is a P-type silicon wafer.
In the method for preparing the micro-core ring cavity by wet silicon etching, the thickness of the oxide layer of the silicon wafer is 2-4 μm, and the preferable thickness is 3 μm.
In the method for preparing the micro-core ring cavity by wet silicon etching, the crystal orientation of the silicon wafer is [111 ].
In the method for preparing the micro-core ring cavity by wet silicon etching, the volume ratio of hydrofluoric acid to nitric acid is (1:19) - (3:17) when an etching solution is prepared; preferably, the volume ratio is 1: 9;
the concentration of hydrofluoric acid used in preparing the etching solution is 35-60 wt.%, preferably 49 wt.%;
the concentration of nitric acid used in the preparation of the etching solution is 60 wt.% to 80 wt.%, preferably 65.0 wt.% to 68.0 wt.%.
In the method for preparing the micro core ring cavity by wet etching of silicon provided by the invention, optionally, the etching rotation speed is 150-300rpm, and preferably, the etching rotation speed is 240 rpm.
In the method for preparing the micro core ring cavity by wet etching of silicon, the photoetching and hydrofluoric acid etching method in the step S1 comprises the following steps:
a. cleaning a silicon wafer, washing an oxide layer on the surface of the silicon wafer by using one or more of acetone, isopropanol and deionized water, and then drying the silicon wafer;
b. b, surface modification, namely putting the silicon wafer cleaned in the step a on a rotary table of a spin coater to rotate, and dropwise adding Hexamethyldisilane (HMDS) on an oxide layer on the surface of the silicon wafer;
c. b, throwing photoresist, namely covering the modified silicon wafer surface oxide layer in the step b with positive photoresist, rotating and throwing the photoresist through a photoresist spinner to enable the photoresist to uniformly cover the modified silicon wafer surface oxide layer, and drying the silicon wafer after the photoresist is finished;
d. c, covering a mask plate on the silicon wafer covered with the positive photoresist obtained in the step c, and then exposing the silicon wafer under ultraviolet light, wherein the mask plate is circular; the mask plate is in a common round shape, and the diameter of the round shape is generally between 70 and 200 mu m; the mask can be arranged in a plurality of circular arrays.
e. D, immersing the silicon wafer obtained in the step d in a developing solution for developing, then cleaning the silicon wafer, and then drying the silicon wafer;
f. and e, immersing the silicon wafer with good development condition obtained in the step e in hydrofluoric acid buffer solution, wherein the positive photoresist is used as an etching mask until the oxide layer which is not covered by the positive photoresist is completely etched, and forming a silicon dioxide disc pattern with the surface covered by the photoresist on the silicon wafer.
In the method for preparing the micro-core ring cavity by wet etching silicon provided by the invention, the positive photoresist is preferably a chemically enhanced positive photoresist generally, and comprises one or more resins containing photoacid labile groups (such as a phenolic resin/diazonaphthoquinone system).
Alternatively, the step S1 is composed of the above steps a to f.
In the method for preparing the micro-core ring cavity by wet silicon etching, in the step b, the rotating speed of the spin coater is 2000-4000rpm, and the rotating time is 3-10 s; preferably, the rotating speed is 3000rpm, and the rotating time is 5 s;
in the method for preparing the micro-core ring cavity by wet silicon etching provided by the invention, optionally, in the step c, the rotation speed of the spin coater is 2000-4000rpm, and the rotation time is 30-90 s; preferably, the rotating speed is 3000rpm, and the rotating time is 60 s;
in the method for preparing the microchip ring cavity by wet etching silicon provided by the invention, optionally, in the step d, the exposure time of the ultraviolet light is 20s-60s, the wavelength of the ultraviolet light is 300-400nm, and the power is about 5-15mW/cm2；
In the method for preparing the micro-core ring cavity by wet silicon etching provided by the invention, optionally, in the step e, the developing solution is tetramethylammonium hydroxide;
in the method for preparing the micro-core ring cavity by wet etching silicon, optionally, in the step f, the hydrofluoric acid buffer solution is prepared by mixing hydrofluoric acid (49 wt.%) and ammonium fluoride (40 wt.%) in a volume ratio of (1-6) to (1-6).
In the method for preparing the micro core ring cavity by wet etching of silicon provided by the invention, in step S2, the wet etching comprises the following steps:
a) preparing an etching solution, and uniformly mixing a hydrofluoric acid solution and a nitric acid solution; adjusting the initial temperature of the etching solution to room temperature; optionally, the room temperature is in the range of 15-30 ℃;
b) placing the silicon dioxide disc graph with the surface covered with the photoresist in a container, then placing the container in an etching solution, and forming small holes penetrating through the inside and the outside of the container at the bottom of the container; in the etching process, the container floats on the surface of the etching solution, and the silicon dioxide disc graph with the surface covered with the photoresist is immersed in the etching solution;
in the method for preparing the micro-core ring cavity by wet silicon etching, the silicon dioxide disc graph with the surface covered with the photoresist is immersed in the etching solution; the etch depth is about one-quarter of the disk diameter.
Optionally, the step S2 consists of steps a) and b).
In the method for preparing the micro core ring cavity by wet etching silicon, step S3, removing the photoresist on the surface of the micro disc cavity, and performing thermal reflow on the micro disc cavity by using a laser comprises the following steps:
1) washing off the photoresist on the surface of the silicon dioxide disc pattern, and then drying;
2) irradiating the sample by using a laser to form a regular silicon dioxide torus so as to finish the preparation of the micro-core ring cavity;
optionally, the step S3 consists of steps 1) and 2).
In the method for preparing the micro-core ring cavity by wet silicon etching, optionally, the wavelength of the laser is 10.6 μm, the pulse frequency of the laser is 1Hz, the duty ratio is 10%, the laser power is about 25W-100W, and the number of pulses is 1-10.
In the method for preparing the micro-core ring cavity by wet etching of silicon, the drying temperature is 100-130 ℃, and the drying time is 1-10 min; preferably, the drying temperature is 115 ℃ and the time is 5 min.
On the other hand, the invention provides the micro-core ring cavity prepared by the method for preparing the micro-core ring cavity by wet silicon etching.
The invention uses HF + HNO3The etching replaces the dry etching in the prior art, improves the isotropy of the etching by adjusting the technological parameters, and realizes 10 at 1550nm wave band8The quality factor is low in cost, and the etching equipment is simple and easy to maintain. In addition, the wet etching for forming the silicon pillar can be carried out at room temperature, and the preparation effect is relatively good in robustness to temperature change and insensitive to humidity change. Such a fabrication process can be directly applied to many fields such as laser, sensing, packaging, etc.
Additional features and advantages of the invention will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention. Other advantages of the invention will be realized and attained by the structure particularly pointed out in the written description and drawings.
Drawings
The accompanying drawings are included to provide an understanding of the present invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the examples serve to explain the principles of the invention and not to limit the invention.
FIG. 1(a) is a schematic diagram of the quality factor measurement experiment apparatus, with the inset being [111]]Preparing a scanning electron microscope photo of the micro-core ring cavity by using the crystal orientation silicon wafer; FIG. 1(b) shows the use of HF + HNO3Schematic diagram of preparing a micro-core ring cavity by an etching method.
FIG. 2 is a top view of a micro-core ring cavity prepared from silicon wafers of different crystal orientations under an optical microscope.
In FIG. 3, (a) is the quality factor obtained by preparing the minicore ring cavity at different starting temperatures. Fig. 3(b) shows the quality factor of samples prepared under different humidity conditions. In FIG. 3(c) is the micro core ring cavity at 1550 of example 1 in the experimentThe highest quality factor measured in nm band is 1.05X 108The resonance wavelength was about 1549.99 nm. FIG. 3(d) shows the distribution of optical modes, and the inset is the side view of the micro-core ring cavity under the SEM, the left and right sides are respectively formed by HF + HNO3And XeF2And (4) preparing.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, embodiments of the present invention are described in detail below. It should be noted that the embodiments and features of the embodiments of the present invention may be arbitrarily combined with each other without conflict.
The embodiment of the invention provides a method for preparing a micro-core ring cavity by wet silicon etching, which comprises the following steps:
s1: taking a silicon wafer, wherein the surface of the silicon wafer is a silicon dioxide oxide layer, and obtaining a silicon dioxide disc graph covered with photoresist on the surface of the silicon wafer by using a photoetching and hydrofluoric acid etching method;
s2: performing wet etching on the silicon dioxide disc pattern covered with the photoresist obtained in the step S1 by using a hydrofluoric acid-nitric acid mixed solution as an etching solution to obtain a micro disc cavity;
s3: and removing the photoresist on the surface of the microdisk cavity, and performing thermal reflux on the microdisk cavity by using a laser to finish the preparation of the microchip ring cavity.
Optionally, the method for preparing the micro core ring cavity by wet etching of silicon consists of the steps.
In the embodiment of the invention, the silicon wafer is a monocrystalline silicon wafer;
in the embodiment of the invention, preferably, the silicon slice resistivity is 0.01-0.02 Ω · cm;
in the embodiment of the present invention, optionally, the silicon wafer is P-type boron-doped;
in the embodiment of the present invention, optionally, the thickness of the oxide layer of the silicon wafer is 2 to 4 μm, and preferably the thickness is 3 μm;
in the embodiment of the present invention, preferably, the crystal orientation of the silicon wafer is [111 ].
In the embodiment of the invention, the volume ratio of hydrofluoric acid to nitric acid is (1:19) - (3:17) when the etching solution is prepared; preferably, the volume ratio is 1: 9;
in the embodiment of the present invention, the concentration of hydrofluoric acid used in preparing the etching solution is 35 wt.% to 60 wt.%, preferably, the concentration of hydrofluoric acid is 49 wt.%;
in the embodiment of the present invention, the concentration of nitric acid used in preparing the etching solution is 60 wt.% to 80 wt.%, and preferably, the concentration of nitric acid is 65.0 wt.% to 68.0 wt.%.
In the embodiment of the present invention, optionally, the etching rotation speed is 150-300rpm, and preferably, the etching rotation speed is 240 rpm.
In the embodiment of the present invention, the photolithography and hydrofluoric acid etching method in step S1 includes the following steps:
a. cleaning a silicon wafer, washing an oxide layer on the surface of the silicon wafer by using one or more of acetone, isopropanol and deionized water, and then drying the silicon wafer;
b. b, surface modification, namely putting the silicon wafer cleaned in the step a on a rotary table of a spin coater to rotate, and dropwise adding Hexamethyldisilane (HMDS) on an oxide layer on the surface of the silicon wafer;
c. b, throwing photoresist, namely covering the modified silicon wafer surface oxide layer in the step b with positive photoresist, rotating and throwing the photoresist through a photoresist spinner to enable the photoresist to uniformly cover the modified silicon wafer surface oxide layer, and drying the silicon wafer after the photoresist is finished;
d. c, covering a mask plate on the silicon wafer covered with the positive photoresist obtained in the step c, and then exposing the silicon wafer under ultraviolet light, wherein the mask plate is circular; the mask plate is in a common round shape, and the diameter of the round shape is generally between 70 and 200 mu m; the mask can be arranged in a plurality of circular arrays.
e. D, immersing the silicon wafer obtained in the step d in a developing solution for developing, then washing the silicon wafer, and drying the silicon wafer;
f. and e, immersing the silicon wafer with good development condition obtained in the step e in hydrofluoric acid buffer solution, wherein the positive photoresist is used as an etching mask until the oxide layer which is not covered by the positive photoresist is completely etched, and forming a silicon dioxide disc pattern with the surface covered by the photoresist on the silicon wafer.
In embodiments of the invention, chemically amplified positive resists are generally preferred, including one or more resins containing photoacid-labile groups (e.g., a phenolic resin/diazonaphthoquinone system).
Alternatively, the step S1 is composed of the above steps a to f.
In the embodiment of the invention, in the step b, the rotation speed of the spin coater is 2000-4000rpm, and the rotation time is 3-10 s; preferably, the rotating speed is 3000rpm, and the rotating time is 5 s;
in the embodiment of the present invention, optionally, in the step c, the rotation speed of the spin coater is 2000-4000rpm, and the rotation time is 30-90 s; preferably, the rotating speed is 3000rpm, and the rotating time is 60 s;
in the embodiment of the present invention, optionally, in the step d, the exposure time of the ultraviolet light is 20s to 60s, the wavelength of the ultraviolet light is 300 to 400nm, and the power is about 5 to 15mW/cm2；
In an embodiment of the present invention, optionally, in step e, the developing solution is tetramethylammonium hydroxide;
in the embodiment of the present invention, optionally, in the step f, the hydrofluoric acid buffer solution is prepared by mixing hydrofluoric acid (49 wt.%) and ammonium fluoride (40 wt.%) in a volume ratio of (1-6): 1-6).
In the embodiment of the present invention, in step S2, the wet etching includes the following steps:
a) preparing an etching solution, and uniformly mixing a hydrofluoric acid solution and a nitric acid solution; adjusting the initial temperature of the etching solution to room temperature; optionally, the room temperature is in the range of 15-30 ℃;
b) placing the silicon dioxide disc graph with the surface covered with the photoresist in a container, then placing the container in an etching solution, and forming small holes penetrating through the inside and the outside of the container at the bottom of the container; in the etching process, the container floats on the surface of the etching solution, and the silicon dioxide disc graph with the surface covered with the photoresist is immersed in the etching solution;
in the embodiment of the invention, the silicon dioxide disc graph with the surface covered with the photoresist is immersed in the etching solution; the etch depth is about one-quarter of the disk diameter.
Optionally, the step S2 consists of steps a) and b).
In the embodiment of the present invention, in step S3, removing the photoresist on the surface of the microdisk cavity, and performing thermal reflow using a laser includes the following steps:
1) washing off the photoresist on the surface of the silicon dioxide disc pattern, and then drying;
2) irradiating the sample by using a laser to form a regular silicon dioxide torus so as to finish the preparation of the micro-core ring cavity;
optionally, the step S3 consists of steps 1) and 2).
In the embodiment of the present invention, optionally, the wavelength of the laser is 10.6 μm, the pulse frequency of the laser is 1Hz, the duty ratio is 10%, the laser power is about 25W to 100W, and the number of pulses is 1 to 10.
In the embodiment of the invention, the drying temperature is 100-130 ℃, and the drying time is 1-10 min; preferably, the drying temperature is 115 ℃ and the time is 5 min.
On the other hand, the invention provides the micro-core ring cavity prepared by the method for preparing the micro-core ring cavity by wet silicon etching.
Example 1
The raw materials used in this example were as follows:
the resistivity of the silicon chip is 0.01-0.02 omega cm, the P type is doped with boron, and the thickness of an oxide layer of the silicon chip is 3 mu m; the wafer diameter was 10cm (4 inches).
The volume ratio of the etching solution to HF to HNO31:9, the etching speed is 240rpm, the concentration of hydrofluoric acid used for preparing the etching solution is HF (49 wt.%), and the concentration of nitric acid used for preparing the etching solution is HNO3(65.0-68.0wt.％)。
Positive photoresist (Beijing Kehua microelectronic BP212-37)
Mask plate, array of mask plate being circular
Developer (Beijing Kehua microelectronic KMP PD238-II positive photoresist developer, tetramethyl ammonium hydroxide)
Hydrofluoric acid buffer solution (prepared by mixing 49 wt.% hydrofluoric acid and 40 wt.% ammonium fluoride in a volume ratio of 1: 6)
FIG. 1(b) shows the use of HF + HNO3Schematic diagram of preparing a micro-core ring cavity by an etching method. The specific process steps are as follows:
(1) whirl coating
a. Cleaning a silicon wafer, washing an oxide layer on the surface of the silicon wafer by using acetone, isopropanol and deionized water in sequence, and then baking the silicon wafer on a heating magnetic stirrer at the temperature of 115 ℃ for 5min to remove water in the silicon wafer;
b. b, surface modification, namely placing the silicon wafer obtained in the step a on a rotary table of a spin coater, and dripping about 8 drops of Hexamethyldisilazane (HMDS) at the center of the silicon wafer, wherein the rotation speed of the spin coater is 3000rpm, and the rotation time is 5 s;
c. and (c) throwing photoresist, dripping positive photoresist at the center of the oxide layer on the surface of the silicon wafer modified in the step (b) until the diameter is about 5cm, rotating the spin coater at 3000rpm for 60s, and baking the silicon wafer on a heating magnetic stirrer at the temperature of 115 ℃ for 2min to dry the silicon wafer.
(2) Exposure method
Covering a mask on the silicon wafer covered with the positive photoresist obtained in the step (1), and then exposing the silicon wafer under an ultraviolet lamp with the wavelength of 365nm and the power of about 10mW/cm2Exposure time 40s, mask is a circular array.
(3) Development
And (3) immersing the silicon wafer obtained in the step (2) in a developing solution for development, then washing with deionized water, and baking for 5 minutes at 115 ℃ on a heating magnetic stirrer.
(4) HF etching
And (4) immersing the silicon wafer obtained in the step (3) in hydrofluoric acid buffer solution, taking the positive photoresist as an etching mask until the oxide layer which is not covered by the positive photoresist is completely etched, and forming a silicon dioxide disc pattern with the surface covered by the photoresist on the silicon wafer.
(5)HF+HNO3Etching of
a. Etching solution formulation, 10mL of hydrofluoric acid (49 wt.%) and 90mL of nitric acid (65.0 wt.% to 68.0 wt.%) were mixed in a 150mL polypropylene jar;
b. adjusting the initial temperature and the ambient temperature of the etching solution to 22 ℃;
c. placing the wide-mouth bottle on a heating magnetic stirrer, and only turning on the stirring function, wherein the stirring speed is 240rpm, and the stirring can avoid local overheating of the solution and accelerate the diffusion of the etching agent;
d. the silicon dioxide disc graph covered with the photoresist is placed in a polystyrene culture dish, then the culture dish is placed in etching solution, a small hole is drilled in the bottom of the culture dish, the culture dish floats on the surface of the etching solution in the etching process, a sample is immersed in the etching solution, a large amount of heat is generated in etching, the temperature rise of 2-3 ℃ is probably caused every time of etching, and the etching depth is about one fourth of the diameter of the disc.
(6) Carbon dioxide laser thermal refluxing
a. Sequentially washing away the photoresist on the surface of the disc by using acetone, isopropanol and deionized water, and baking the disc on a heating magnetic stirrer at the temperature of 115 ℃ for 5min to dry the surface of the disc;
b. and irradiating the sample by using a carbon dioxide laser to finish the preparation of the micro-core ring cavity. The wavelength of the carbon dioxide laser is 10.6 mu m, the laser pulse frequency is 1Hz, the duty ratio is 10 percent, the laser power is about 35W, and the number of pulses is 3.
Comparative example 1
Comparative example 1 XeF was used according to the method provided in Nature 421, 925-928 (2003)2The minicore ring cavities were prepared as shown in the right insert of fig. 3 (d). For comparison with example 1, the difference from the above document is mainly that the silicon wafer is P-type boron-doped [111]]The crystal orientation resistivity is 0.01-0.02 omega cm, the thickness of the oxide layer of the silicon wafer is 3 mu m, and the diameter of the photoetching mask is a disc of 120 mu m. As shown in FIG. 3(d), XeF is used2Method (comparative example 1) and use of HF + HNO3The highest quality factor of the minicore ring cavity prepared by the method of (example 1) is of the same order of magnitude.
Test example
1. Characterization of the quality factor of the Microcore Ring Cavity
FIG. 1(a) is a schematic diagram of the experimental setup, wherein the dashed arrows represent the fiber paths and the solid arrows correspond to the electrical paths. In order to more comprehensively characterize the micro-core ring cavity, tunable lasers with three wave bands of 980nm, 1450nm and 1550nm are respectively used as laser sources. Laser light emitted by the laser is coupled into the microcavity through the fiber taper. The output of the laser is detected by a photodetector, the voltage output of which is connected to an oscilloscope. During testing, the laser intensity at the output end of the optical fiber cone is adjusted to the magnitude of 3 muW by the adjustable attenuator to reduce the influence of thermal broadening and other nonlinear effects on the quality factor. An oscilloscope was used to record each observed high Q transmission line. The quality factor in the present invention is a measured quality factor or a load quality factor, and includes intrinsic loss and coupling loss.
2. Testing of silicon wafers of different crystal orientations
FIG. 2 is a top view under an optical microscope of a micro-core ring cavity prepared from silicon wafers with different crystal orientations, and FIG. 2(a) is [111]]Crystal orientation, [100 ] in FIG. 2(b)]Crystal orientation, [110 ] in FIG. 2(c)]And (4) crystal orientation. These samples were prepared using a similar process flow as example 1, except that HF + HNO3The initial temperature and ambient temperature of the etching are 24 ℃, and the ambient humidity is 21.2-24.3%. As can be seen from fig. 2, the anisotropy of each silicon wafer can be observed more clearly. The crystal of silicon is of diamond structure and belongs to the group OhThe point groups, analyzed from the symmetry point of view, the (111), (100) and (110) crystal planes of single crystal silicon correspond to 3-order, 4-order and 2-order rotational symmetries, respectively. The etch rates for the different crystal orientations differ, resulting in a silicon pillar planar pattern with rotational symmetries similar to 3, 4 and 2 times rotational symmetries. Along [111]]Viewed from the direction of crystal orientation, silicon atoms are arranged in a regular triangle, so that the symmetry of the plane pattern of the crystal orientation sample is increased from 3 times to 6 times, is higher than the other two crystal orientations, and is closer to a circle with the highest plane symmetry. The samples were characterized at 980nm, 1450nm, and 1550nm bands, respectively, and the highest measured load quality factors are shown in table 1. [111]Quality factor of crystal orientation higher than [100 ]]And [110 ]]And (4) crystal orientation. The silicon pillars have a heat-conducting effect during the thermal reflow process, and have a circular and surfaceSmooth silicon pillars facilitate uniform contraction and cooling of the silicon dioxide, thus enabling a higher quality factor. Albeit [100 ]]And [110 ]]Can also have a value of more than 107But the baseline of its transmission spectrum is not as good as [111] possibly due to the presence of many low-Q modes]The crystal orientation is flat.
TABLE 1 quality factors of samples of different crystallographic orientations at different wavebands
| Q(×10) | 980nm | 1450nm | 1550nm |
| [111] | 15.5 | 6.54 | 6.26 |
| [100] | 8.44 | 4.66 | 4.48 |
| [110] | 6.56 | 2.87 | 3.00 |
3. Testing of samples prepared at different temperatures and humidities
Using [111]]Sample prepared from crystal orientation silicon waferThe article is used for robustness study and mode profile comparison, and the laser source used in the test is 1550nm band. Temperature and humidity are two very important environmental parameters, temperature and humidity being referred to herein as HF + HNO being carried out3Temperature and humidity during etching. In a robust study of temperature, the temperature of the solution and the ambient temperature were adjusted to one and the same value prior to etching. FIG. 3(a) shows the quality factors obtained by preparing the minicore ring cavities at different starting temperatures, with an etch starting temperature of 18 ℃ to 28 ℃ to cover the range of room temperature. As can be seen, 5X 10 can be obtained at different temperatures using this method7The above quality factors. FIG. 3(b) shows the quality factor of samples prepared at different humidities. The humidity range is about 15% to 45%, and the etching start temperature and the ambient temperature are both 24 ℃. The samples were immersed in the etchant, so humidity should have no effect on the quality factor of the micro core ring cavity, which is presumably consistent with the data in fig. 3 (b). The highest quality factor measured in the 1550nm band in the experiment was 1.05X 108The resonance wavelength was about 1549.99nm, the transmission spectrum was finely scanned as shown in FIG. 3(c), and the sample was tested using [111]]The crystal orientation sample is prepared at 22 ℃. Mode splitting is due to degeneracy being removed by the coupling between the forward optical mode and the reverse optical mode. Both single and double lorentzian profiles exist in the observed optical mode. FIG. 3(d) shows the distribution of optical modes, the two samples being respectively made of HF + HNO3And XeF2The preparation is carried out, and the insets on the left side and the right side are respectively obtained by two etching methods. HF + HNO3The quality factor and XeF of the micro-core ring cavity prepared by the method2The etching is equivalent.
Although the embodiments of the present invention have been described above, the above description is only for the convenience of understanding the present invention, and is not intended to limit the present invention. It will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims.
Claims (10)
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116027609A (en) * | 2023-03-27 | 2023-04-28 | 南京大学 | Microcavity with bread-ring structure and preparation method and application thereof |
| CN119126298A (en) * | 2024-07-29 | 2024-12-13 | 南京大学 | A micro-ring core cavity with ultra-high quality factor and its preparation method and application |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050169331A1 (en) * | 2004-02-02 | 2005-08-04 | Vahala Kerry J. | Silica sol gel micro-laser on a substrate and method of fabrication |
| CN101895060A (en) * | 2010-06-10 | 2010-11-24 | 中国科学院苏州纳米技术与纳米仿生研究所 | Multiband silicon-based microdisk mixing laser device thereof and preparation method thereof |
| CN102157364A (en) * | 2010-02-11 | 2011-08-17 | 台湾积体电路制造股份有限公司 | wafer processing method |
| CN102718180A (en) * | 2012-06-28 | 2012-10-10 | 中国科学院苏州纳米技术与纳米仿生研究所 | Concentric ring core nano silicon micro-disk micro-cavity device and preparation method thereof |
| US20120321245A1 (en) * | 2011-06-13 | 2012-12-20 | Vahala Kerry | Silica-on-silicon waveguides and related fabrication methods |
| CN104466680A (en) * | 2014-12-30 | 2015-03-25 | 南京信息工程大学 | Organic complex laser and manufacturing method thereof |
| CN104868351A (en) * | 2015-04-27 | 2015-08-26 | 清华大学 | Method for adjusting resonant frequency of echo wall mode microcavity |
| CN105337168A (en) * | 2015-10-16 | 2016-02-17 | 南京邮电大学 | Optical pumping nitride echo wall laser performing emission in single direction and preparation method thereof |
| CN110440897A (en) * | 2019-07-11 | 2019-11-12 | 南京邮电大学 | The preparation method of Echo Wall microcavity acoustic sensor and its dicyclo resonant cavity |
-
2020
- 2020-04-16 CN CN202010299877.0A patent/CN113526458B/en active Active
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050169331A1 (en) * | 2004-02-02 | 2005-08-04 | Vahala Kerry J. | Silica sol gel micro-laser on a substrate and method of fabrication |
| CN102157364A (en) * | 2010-02-11 | 2011-08-17 | 台湾积体电路制造股份有限公司 | wafer processing method |
| CN101895060A (en) * | 2010-06-10 | 2010-11-24 | 中国科学院苏州纳米技术与纳米仿生研究所 | Multiband silicon-based microdisk mixing laser device thereof and preparation method thereof |
| US20120321245A1 (en) * | 2011-06-13 | 2012-12-20 | Vahala Kerry | Silica-on-silicon waveguides and related fabrication methods |
| CN102718180A (en) * | 2012-06-28 | 2012-10-10 | 中国科学院苏州纳米技术与纳米仿生研究所 | Concentric ring core nano silicon micro-disk micro-cavity device and preparation method thereof |
| CN104466680A (en) * | 2014-12-30 | 2015-03-25 | 南京信息工程大学 | Organic complex laser and manufacturing method thereof |
| CN104868351A (en) * | 2015-04-27 | 2015-08-26 | 清华大学 | Method for adjusting resonant frequency of echo wall mode microcavity |
| CN105337168A (en) * | 2015-10-16 | 2016-02-17 | 南京邮电大学 | Optical pumping nitride echo wall laser performing emission in single direction and preparation method thereof |
| CN110440897A (en) * | 2019-07-11 | 2019-11-12 | 南京邮电大学 | The preparation method of Echo Wall microcavity acoustic sensor and its dicyclo resonant cavity |
Non-Patent Citations (1)
| Title |
|---|
| 刘晓斐: ""铒离子掺杂回音壁光学微腔增益性质的研究"", 中国博士学位论文全文数据库（工程科技Ⅱ辑）, pages 30 - 34 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116027609A (en) * | 2023-03-27 | 2023-04-28 | 南京大学 | Microcavity with bread-ring structure and preparation method and application thereof |
| CN119126298A (en) * | 2024-07-29 | 2024-12-13 | 南京大学 | A micro-ring core cavity with ultra-high quality factor and its preparation method and application |
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|---|---|
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