CN111129944A - Electro-absorption light emission chip based on quantum communication application and manufacturing method thereof - Google Patents
Electro-absorption light emission chip based on quantum communication application and manufacturing method thereof Download PDFInfo
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- CN111129944A CN111129944A CN201911421082.6A CN201911421082A CN111129944A CN 111129944 A CN111129944 A CN 111129944A CN 201911421082 A CN201911421082 A CN 201911421082A CN 111129944 A CN111129944 A CN 111129944A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/50—Transmitters
- H04B10/501—Structural aspects
- H04B10/503—Laser transmitters
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/70—Photonic quantum communication
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Abstract
The invention discloses an electro-absorption light emission chip based on quantum communication application and a manufacturing method thereof, wherein the electro-absorption light emission chip comprises the following steps: epitaxially growing a multi-quantum well structure on the N-type substrate; after depositing a dielectric film on the surface of the multi-quantum well structure, performing mask photoetching to etch off the multi-quantum well structure in the region needing to be epitaxially grown again; the region needing to be epitaxially grown again is a region B, and a multi-quantum well structure of the region B is epitaxially grown; manufacturing a grating layer in the area A by adopting a holographic exposure method; and (3) masking and photoetching an electric isolation groove between the A, B region multiple quantum well structures, sputtering a P-surface electrode of a laser and a P-surface high-frequency electrode of a modulator, and masking and photoetching the electric isolation groove, the sputtering laser and an N-surface electrode of the modulator at a position on the substrate corresponding to the electric isolation groove.
Description
Technical Field
The invention belongs to the technical field of optoelectronic devices, and particularly relates to an electro-absorption light-emitting chip based on quantum communication application and a manufacturing method thereof.
Background
The statements in this section merely provide background information related to the present disclosure and may not necessarily constitute prior art.
For long distance applications, the effect of chirp can be overcome by using an external modulator. Among various optical modulators, the electro-absorption modulator based on the quantum confined stark effect in a semiconductor multiple quantum well structure has remarkable advantages and wide application prospects, which are derived from many characteristics of the device, such as small size, compact structure, easy monolithic integration with a semiconductor DFB laser, low working voltage, low power consumption, simple and efficient optical coupling between the laser and the modulator, and more stable and higher efficiency coupling of the whole EML device and an optical fiber.
An electro-absorption modulated distributed feedback semiconductor laser (EML) is a main optical signal generating element in an optical communication system (especially in a long-distance trunk network), and for the quantum secure communication developed at present, the requirement of long-distance secure communication is becoming more and more urgent, and particularly, the higher requirements are put forward for the miniaturization, the function stability and the like of devices, especially for the opening operation of the "jinghu trunk" project of the quantum secure communication.
The inventors have found in their studies that conventional electroabsorption modulated laser chips comprise two parts: the laser chip and the electroabsorption modulator chip are epitaxially grown on the same substrate and share the same N electrode. In the field of quantum communication, a laser generally adopts a negative voltage form to emit light, so that the modulation voltage of a modulator is easily influenced by the voltage of the laser, and the conventional design mode of the electroabsorption modulation laser chip cannot meet the requirement that the light signal is modulated in the application of quantum communication, and the light emission of the laser is not influenced.
Disclosure of Invention
In order to overcome the defects of the prior art, the invention provides an electro-absorption light emitting chip based on quantum communication application, which can solve the technical problem that the design mode of the existing electro-absorption modulated laser cannot meet the requirements of respective control of the laser and the modulator in the field of quantum secret communication.
In order to achieve the above object, one or more embodiments of the present invention provide the following technical solutions:
an electro-absorption light emitting chip based on quantum communication applications, comprising: the laser chip and the modulator chip are epitaxially grown on the same substrate, the P pole of the laser chip is isolated from the P pole of the modulator chip, and the N pole of the laser chip is isolated from the N pole of the modulator chip, so that the laser chip and the modulator chip can be independently regulated and controlled by external voltage.
A light emitting unit comprises the electro-absorption light emitting chip based on quantum communication application.
One or more embodiments of the present invention provide a method for fabricating an electro-absorption light emitting chip based on quantum communication applications, including:
the laser chip and the modulator chip are epitaxially grown on the same substrate, the P pole of the laser chip is isolated from the P pole of the modulator chip, and the N pole of the laser chip is isolated from the N pole of the modulator chip, so that the laser chip and the modulator chip can be independently regulated and controlled by external voltage.
According to the further technical scheme, a multi-quantum well structure is epitaxially grown on an N-type substrate to form an epitaxial wafer;
after a dielectric film is deposited on the surface of the multi-quantum well structure, mask photoetching is carried out, the multi-quantum well structure of the area needing to be epitaxially grown again is etched, and an area A and an area B are formed; the area A is a laser area, and the area B is a modulator area;
the region needing to be epitaxially grown again is a region B, and a multi-quantum well structure of the region B is epitaxially grown;
manufacturing a grating layer in the area A by adopting a holographic exposure method;
and (3) masking and photoetching an electric isolation groove between the A, B region multiple quantum well structures, sputtering a P-surface electrode of a laser and a P-surface high-frequency electrode of a modulator, and masking and photoetching the electric isolation groove, the sputtering laser and an N-surface electrode of the modulator at a position on the substrate corresponding to the electric isolation groove.
The further technical scheme is that a multi-quantum well structure is epitaxially grown on an N-type substrate, and specifically comprises the following steps:
and sequentially epitaxially growing a buffer layer, a lower waveguide layer and a multi-quantum well waveguide on the N-type InP substrate by metal organic chemical vapor deposition.
According to the further technical scheme, after a dielectric film is deposited on the surface of the multi-quantum well structure, mask photoetching is carried out, and the multi-quantum well structure of the area needing to be epitaxially grown again is etched, wherein the method specifically comprises the following steps:
growing SiO on the surface of the multiple quantum well structure2The mask layer of the material, after the photoresist of the multiple quantum well structure of the B area is developed and removed, the etching technology is adopted to manufacture SiO2A mask pattern;
removing the multiple quantum well waveguide and the lower waveguide layer in the B region by an etching method;
and placing the epitaxial wafer into metal organic vapor deposition equipment for high-temperature heat treatment.
The further technical scheme is that the multiple quantum well structure of the B region is grown in an epitaxial mode, and specifically comprises the following steps:
and epitaxially growing a lower waveguide layer and a multiple quantum well waveguide in the region B in sequence.
The further technical scheme is that a holographic exposure method is adopted to manufacture a grating layer in the area A, and the specific steps are as follows:
and depositing an upper waveguide layer and a cover layer in the area A and the area B in the whole area, selectively manufacturing a grating in the area A of the multi-quantum well structure by adopting a holographic exposure method, and then epitaxially growing a grating cover layer, an optical limiting layer, an etching barrier layer and an electric contact layer in the whole area.
According to the further technical scheme, when a P-surface electrode of a laser and a P-surface high-frequency electrode of a modulator are manufactured, a ridge waveguide structure is formed by adopting a ridge waveguide process for corrosion, an electric isolation groove is photoetched by a mask in a strip-shaped area connected with an area A and an area B, an electric contact layer is corroded, and He ions are injected into a light limiting layer of the area to be used as electric isolation;
polyimide is coated on the modulator area, and then a P-surface electrode of the laser and a P-surface high-frequency electrode of the modulator are respectively sputtered on two sides of the electric isolation groove.
According to a further technical scheme, when N-surface electrodes of the laser and the modulator are manufactured, the substrate is thinned, a mask is used for photoetching an electric isolation groove at a position corresponding to an ionization groove on one side of a P electrode, and the N-surface electrodes of the laser and the modulator are manufactured on two sides of the electric isolation groove respectively by a sputtering method.
According to a further technical scheme, after the P pole and the N pole of the electric absorption light emitting chip are manufactured, a single electric absorption light emitting chip is dissociated, an antireflection film is plated on the end face of the modulator on one side of the chip, and a high-reflection film is plated on the end face of the laser on the other side of the chip.
The above one or more technical solutions have the following beneficial effects:
in the laser chip in the electroabsorption modulation laser, the laser chip and the modulator chip still grow on the same substrate in an epitaxial manner, but the P pole and the N pole of the laser chip and the P pole and the N pole of the modulator chip are respectively isolated, so that the laser chip and the modulator chip can be independently regulated and controlled by external voltage.
The laser chip and the modulator chip are provided with the N electrode and the P electrode which are independent of each other, so that the modulator is not influenced by the driving voltage of the laser when the laser chip is modulated, and vice versa, the purpose of independently modulating the laser chip and the modulator chip is achieved, the performance requirement of the electro-absorption modulated laser in the existing quantum secret communication can be met, and the quantum secret communication modulator has the advantages of reliable process and lower cost.
The laser chip does not need to redesign a domain, and can realize that the laser chip and the modulator chip are independently modulated by the outside only by etching and ion implantation on the epitaxial substrates of the laser chip and the modulator chip in the conventional electric absorption modulation laser chip and separating the N-type substrate of the laser chip and the modulator chip, so that the manufacturing process is greatly simplified, and the design and development cost of the electric absorption modulation laser in the quantum secret communication field is favorably controlled.
The application of the electro-absorption modulation laser chip structure in the field of quantum secret communication is widened by redesigning the structure of the electro-absorption modulation laser chip, the convenience and the cost in the manufacturing of the prior art are fully considered in the design of the device structure, so that the preparation process and the flow of the original electro-absorption modulation laser are kept to a great extent, the high yield of a newly designed chip and the low cost of redesign can be ensured, and the device has great competitive advantages in the future large-scale production and application.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, are included to provide a further understanding of the invention, and are incorporated in and constitute a part of this specification, illustrate exemplary embodiments of the invention and together with the description serve to explain the invention and not to limit the invention.
FIG. 1 is a schematic diagram of a multi-quantum well structure epitaxially grown on a substrate according to an embodiment of the present invention;
FIG. 2 is a schematic structural diagram of a mask-lithography of a multi-quantum well structure to form a region A and a region B according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of a multiple quantum well structure of an epitaxial B region according to an embodiment of the present invention;
FIG. 4 is a schematic diagram of a grating structure for fabricating area A according to an embodiment of the present invention;
FIG. 5 is a schematic diagram of an electrical isolation trench structure for fabricating P and N electrodes according to an embodiment of the present invention.
Detailed Description
It is to be understood that the following detailed description is exemplary and is intended to provide further explanation of the invention as claimed. Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs.
It is noted that the terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of exemplary embodiments according to the invention. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, and it should be understood that when the terms "comprises" and/or "comprising" are used in this specification, they specify the presence of stated features, steps, operations, devices, components, and/or combinations thereof, unless the context clearly indicates otherwise.
The embodiments and features of the embodiments of the present invention may be combined with each other without conflict.
Example one
The embodiment discloses a manufacturing method of an electro-absorption light emitting chip based on quantum communication application.
To illustrate the embodiment more clearly, the implementation process of the electro-absorption light emitting chip based on quantum communication application can be described as follows:
and epitaxially growing a buffer layer and a multi-quantum well structure on the substrate to form an epitaxial wafer.
And after a dielectric film is deposited on the surface of the multi-quantum well structure, mask photoetching is carried out, and parts of the multi-quantum well waveguide and the lower waveguide layer in the region needing to be epitaxially grown again are etched.
And (4) epitaxially growing a region B again to obtain a multiple quantum well structure of the region B.
And (3) manufacturing a grating layer in the area A by adopting a holographic exposure method.
Masking the first electrically isolated trench 14 between the multiple quantum well structures a and B; a second electrical isolation trench 15 is mask-lithographically formed in the substrate at a location corresponding to the electrical isolation trench 14.
In the above embodiments, in the above scheme: the epitaxial wafer of the whole light emitting chip is divided into a laser area and a modulator area in the length direction, wherein the laser area is an area A, and the modulator area is an area B. The substrate is an N-type InP substrate. The multiple quantum well structure A comprises a lower waveguide layer and a multiple quantum well waveguide. The dielectric film is silicon dioxide or silicon nitride. The etching method is wet etching. The multiple quantum well structure B comprises a lower waveguide layer and a multiple quantum well waveguide. The grating layer is manufactured on the cover layer of the multiple quantum well structure A area. The first and second electrical isolation trenches 14 and 15 are deposited SiO2Thereafter, electrical isolation is achieved by implanting He ions.
In a more detailed embodiment, a method for fabricating an electro-absorption light emitting chip based on quantum communication application includes:
the method comprises the following steps: and epitaxially growing a multi-quantum well structure on the N-type substrate to form an epitaxial wafer.
Referring to the attached figure 1, a buffer layer 2, a lower waveguide layer 3 and a multiple quantum well waveguide 4 are epitaxially grown on an N-type InP substrate 1 in sequence by metal organic chemical vapor deposition.
Step two: mask photoetching is carried out, and parts of the multiple quantum well waveguide 4 and the lower waveguide layer 3 which need secondary epitaxial regions are removed by adopting an etching method, and the method is shown in the attached figure 2 and specifically comprises the following steps:
growing SiO on the surface of the multiple quantum well structure2A mask layer of material. And forming a region A and a region B by using a conventional exposure and development technology. Developing and removing the photoresist of the multiple quantum well structure in the B region, and then manufacturing SiO by adopting an etching technology2And (5) masking the pattern.
Removing the multiple quantum well waveguide 4 and the lower waveguide layer 3 in the B region by adopting an etching method;
and then, placing the epitaxial wafer into metal organic vapor deposition equipment for high-temperature heat treatment, so as to optimize and reduce the damage of the steps to the existing chip structure, and meanwhile, preparing for the subsequent chip growth.
Step three: and a multi-quantum well structure of a secondary epitaxial B region.
Referring to fig. 3, a lower waveguide layer 5 and a multiple quantum well waveguide 6 are epitaxially grown in sequence in the region B.
Step four: and epitaxially growing a grating layer.
Referring to fig. 4, an upper waveguide layer 7 and a cover layer 8 are deposited on the area A and the area B in the whole area, a grating 9 is selectively manufactured on the area A of the multi-quantum well structure by a holographic exposure method, and then a grating cover layer 10, an optical limiting layer 11, an etching barrier layer 12 and an electric contact layer 13 are epitaxially grown in the whole area.
Step five: and preparing an N electrode electric isolation groove and a P electrode electric isolation groove.
Referring to fig. 5, a conventional ridge waveguide process is used to etch and form a ridge waveguide structure, and in the stripe region where the a region and the B region are connected, the first electrical isolation trench 14 is masked and etched to remove the electrical contact layer 13, and He ions are implanted into the optical confinement layer 11 in the region to be used as electrical isolation.
Polyimide (polyimide) is coated on the modulator region, and then a P-surface electrode of the laser and a P-surface high-frequency electrode of the modulator are respectively sputtered on two sides of the first electric isolation groove 14, wherein the P-surface electrodes of the first electric isolation groove 14 and the P-surface high-frequency electrode of the modulator can independently work.
Thinning the substrate 1, photoetching a second electric isolation groove 15 by using a mask in the same method at a position corresponding to the ionization groove at one side of the P electrode, respectively manufacturing N-surface electrodes of the laser and the modulator at two sides of the second electric isolation groove 15 by using a sputtering method, and enabling the N electrodes of the laser and the modulator to work independently by using the second electric isolation groove 15.
Furthermore, after the P-face electrode and the N-face electrode of the electric absorption light emission chip are manufactured, a single electric absorption light emission chip can be dissociated, an antireflection film is plated on the end face of the modulator on one side of the chip, and a high-reflection film is plated on the end face of the laser on the other side of the chip.
The embodiment of the application realizes that the laser chip and the modulator chip can be completely and independently modulated by simultaneously realizing the electrical isolation of the P electrode and the N electrode between the laser chip and the modulator chip in the conventional electrical absorption modulation laser chip without mutual influence, so that the laser chip and the modulator chip can be suitable for a light emission unit in the field of quantum secret communication.
Example two
It is an object of the present embodiment to provide an electro-absorption light emitting chip based on quantum communication applications, comprising: the laser chip and the modulator chip are epitaxially grown on the same substrate, the P pole of the laser chip is isolated from the P pole of the modulator chip, and the N pole of the laser chip is isolated from the N pole of the modulator chip, so that the laser chip and the modulator chip can be independently regulated and controlled by external voltage.
In this embodiment, the fabrication of the electro-absorption light emitting chip based on quantum communication application can be referred to the specific fabrication process in the first embodiment, and will not be described here.
EXAMPLE III
It is an object of the present embodiment to provide a light emitting unit comprising an electro-absorption light emitting chip based on quantum communication applications.
In this embodiment, the chip for emitting light also needs external power and signals, and corresponding structures such as packaging, all of which constitute the light emitting unit.
The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Although the embodiments of the present invention have been described with reference to the accompanying drawings, it is not intended to limit the scope of the present invention, and it should be understood by those skilled in the art that various modifications and variations can be made without inventive efforts by those skilled in the art based on the technical solution of the present invention.
Claims (11)
1. The manufacturing method of the electric absorption light emitting chip based on quantum communication application is characterized in that,
the method comprises the following steps:
epitaxially growing a laser chip and a modulator chip on the same substrate;
the P pole of the laser chip is isolated from the P pole of the modulator chip, and the N pole of the laser chip is isolated from the N pole of the modulator chip, so that the laser chip and the modulator chip can be independently regulated and controlled by external voltage.
2. The method of claim 1, wherein the multiple quantum well structure is epitaxially grown on an N-type substrate to form an epitaxial wafer;
after a dielectric film is deposited on the surface of the multi-quantum well structure, mask photoetching is carried out, the multi-quantum well structure of the area needing to be epitaxially grown again is etched, and an area A and an area B are formed; the area A is a laser area, and the area B is a modulator area;
the region needing to be epitaxially grown again is a region B, and a multi-quantum well structure of the region B is epitaxially grown;
manufacturing a grating layer in the area A by adopting a holographic exposure method;
and (3) masking and photoetching an electric isolation groove between the A, B region multiple quantum well structures, sputtering a P-surface electrode of a laser and a P-surface high-frequency electrode of a modulator, and masking and photoetching the electric isolation groove, the sputtering laser and an N-surface electrode of the modulator at a position on the substrate corresponding to the electric isolation groove.
3. The method of claim 2, wherein the multiple quantum well structure is epitaxially grown on an N-type substrate, and specifically comprises:
and sequentially epitaxially growing a buffer layer, a lower waveguide layer and a multi-quantum well waveguide on the N-type InP substrate by metal organic chemical vapor deposition.
4. The method for manufacturing an electro-absorption light-emitting chip based on quantum communication application as claimed in claim 2, wherein after depositing a dielectric film on the surface of the multiple quantum well structure, mask lithography is performed to etch away the multiple quantum well structure of the area needing to be epitaxially grown again, specifically:
growing SiO on the surface of the multiple quantum well structure2The mask layer of the material, after the photoresist of the multiple quantum well structure of the B area is developed and removed, the etching technology is adopted to manufacture SiO2A mask pattern;
removing the multiple quantum well waveguide and the lower waveguide layer in the B region by an etching method;
and placing the epitaxial wafer into metal organic vapor deposition equipment for high-temperature heat treatment.
5. The method of claim 2, wherein the multiple quantum well structure of the B region is epitaxially grown, and specifically comprises:
and epitaxially growing a lower waveguide layer and a multiple quantum well waveguide in the region B in sequence.
6. The method for manufacturing an electro-absorption light-emitting chip based on quantum communication application as claimed in claim 2, wherein a holographic exposure method is adopted to manufacture a grating layer in the region A, and the method comprises the following steps:
and depositing an upper waveguide layer and a cover layer in the area A and the area B in the whole area, selectively manufacturing a grating in the area A of the multi-quantum well structure by adopting a holographic exposure method, and then epitaxially growing a grating cover layer, an optical limiting layer, an etching barrier layer and an electric contact layer in the whole area.
7. The method of claim 2, wherein a ridge waveguide structure is formed by etching using a ridge waveguide process during fabrication of a P-side electrode of the laser and a P-side high frequency electrode of the modulator, and an electrical isolation trench is etched in a stripe region connecting the region a and the region B by masking, and the electrical contact layer is etched away while He ions are implanted into the optical confinement layer in the region as electrical isolation;
polyimide is coated on the modulator area, and then a P-surface electrode of the laser and a P-surface high-frequency electrode of the modulator are respectively sputtered on two sides of the electric isolation groove.
8. The method of claim 2, wherein the N-plane electrodes of the laser and modulator are formed by thinning the substrate, masking the position corresponding to the ionization trench on the P-electrode side to form an electrical isolation trench, and sputtering the N-plane electrodes of the laser and modulator on both sides of the electrical isolation trench.
9. The method for fabricating an electro-absorption light-emitting chip based on quantum communication application as claimed in any one of claims 1 to 8,
after the P pole and the N pole of the electric absorption light emitting chip are manufactured, a single electric absorption light emitting chip is dissociated, an antireflection film is plated on the end face of the modulator on one side of the chip, and a high-reflection film is plated on the end face of the laser on the other side of the chip.
10. An electro-absorption light emitting chip based on quantum communication applications, comprising: the laser chip and the modulator chip are epitaxially grown on the same substrate, the P pole of the laser chip is isolated from the P pole of the modulator chip, and the N pole of the laser chip is isolated from the N pole of the modulator chip, so that the laser chip and the modulator chip can be independently regulated and controlled by external voltage.
11. A light emitting unit comprising the electro-absorption light emitting chip based on quantum communication application as claimed in claim 10.
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| CN112670820A (en) * | 2020-12-23 | 2021-04-16 | 中国科学院半导体研究所 | Method for realizing electric isolation of functional areas of electric absorption modulation laser |
| CN112821197A (en) * | 2020-12-30 | 2021-05-18 | 中国科学院半导体研究所 | Light emitting chip manufacturing method and light emitting chip |
| WO2022193886A1 (en) * | 2021-03-16 | 2022-09-22 | 华为技术有限公司 | Optical modulation and amplification apparatus, optical module, optical network unit and optical communication system |
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| CN1893209A (en) * | 2005-07-08 | 2007-01-10 | 阿尔卡特公司 | Opto-electronic device comprising a laser integrated with a modulator and method of fabrication thereof |
| CN103378544A (en) * | 2012-04-16 | 2013-10-30 | 三菱电机株式会社 | Modulator integrated laser device |
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| CN1464603A (en) * | 2002-06-21 | 2003-12-31 | 中国科学院半导体研究所 | Multi-quantum well waveguide butt coupling method |
| CN1893209A (en) * | 2005-07-08 | 2007-01-10 | 阿尔卡特公司 | Opto-electronic device comprising a laser integrated with a modulator and method of fabrication thereof |
| CN103378544A (en) * | 2012-04-16 | 2013-10-30 | 三菱电机株式会社 | Modulator integrated laser device |
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| CN112670820A (en) * | 2020-12-23 | 2021-04-16 | 中国科学院半导体研究所 | Method for realizing electric isolation of functional areas of electric absorption modulation laser |
| CN112821197A (en) * | 2020-12-30 | 2021-05-18 | 中国科学院半导体研究所 | Light emitting chip manufacturing method and light emitting chip |
| WO2022193886A1 (en) * | 2021-03-16 | 2022-09-22 | 华为技术有限公司 | Optical modulation and amplification apparatus, optical module, optical network unit and optical communication system |
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