CN117394138A - Electroabsorption modulator laser and preparation method thereof - Google Patents
Electroabsorption modulator laser and preparation method thereof Download PDFInfo
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- CN117394138A CN117394138A CN202311285162.XA CN202311285162A CN117394138A CN 117394138 A CN117394138 A CN 117394138A CN 202311285162 A CN202311285162 A CN 202311285162A CN 117394138 A CN117394138 A CN 117394138A
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- 238000002955 isolation Methods 0.000 claims abstract description 76
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- 238000004519 manufacturing process Methods 0.000 claims abstract description 28
- 238000002347 injection Methods 0.000 claims abstract description 18
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- 238000010521 absorption reaction Methods 0.000 claims description 16
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 28
- 229910052681 coesite Inorganic materials 0.000 description 14
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- 239000000377 silicon dioxide Substances 0.000 description 14
- 235000012239 silicon dioxide Nutrition 0.000 description 14
- 229910052682 stishovite Inorganic materials 0.000 description 14
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- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 8
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- 238000005275 alloying Methods 0.000 description 2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/0601—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium comprising an absorbing region
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Abstract
The invention relates to the technical field of chips and provides a preparation method of an electroabsorption modulator laser, which comprises the following steps of S1, forming a window structure at an light emitting end of an EAM region through masking, growing and etching; s2, continuing to mask and etch to manufacture a deep isolation trench; s3, opening an electric injection window after mask and etching, wherein the EAM window structure does not open the electric injection window; s4, manufacturing electrodes in the LD region and the EAM region, wherein the EAM window structure is not used as an electrode; s5, after the electrode is manufactured, the electrode is separated into a single electroabsorption modulator laser chip. The laser comprises a DFB laser and an EAM electroabsorption modulator, deep isolation grooves are formed in two sides of a ridge waveguide or isolation region of the DFB laser, and a window structure is formed at an optical outlet end of the EAM electroabsorption modulator. The invention designs the deep isolation grooves on the two sides of the shallow ridge waveguide or the isolation region of the DFB laser to greatly reduce the leakage condition of the butt joint interface of the butt joint window in the carrier injection process of the DFB laser.
Description
Technical Field
The invention relates to the technical field of chips, in particular to an electroabsorption modulator laser and a preparation method thereof.
Background
The semiconductor laser has the advantages of small volume, light weight, low cost and easy mass production, and has wide development prospect in the fields of optical storage, optical communication, national defense and the like. The EML laser integrates a laser and an electroabsorption modulator on the same semiconductor chip, so that the EML laser has the advantages of low driving voltage, low power consumption, high modulation bandwidth, small volume, compact structure and the like, and is more suitable for high-speed and long-distance transmission than the traditional DFB laser.
A common EML electroabsorption modulated laser is a distributed feedback DFB laser integrated with an EAM modulator to achieve both light source and high speed electro-optic modulation functions. In such an integrated semiconductor laser, reflected light with a modulated signal at the light-emitting end of the laser will return to the DFB area to resonate, adversely affecting the operation of the DFB laser. With the continued development of fiber optic networks, the power requirements for modulated lasers are becoming increasingly higher. The traditional method is to plate an anti-reflection film on the light emitting end of the laser, and reduce the reflectivity to reduce the reflected light crosstalk. With the continuous increase of the output power of the laser, it is not enough to plate an anti-reflection film on the light-emitting end face to inhibit the reflected light crosstalk, and the common improvement method is to optimize the waveguide structure, and adopt a curved waveguide structure or a butt-joint window structure, which essentially forms a divergent light field at the light-emitting cavity face to reduce the proportion of the reflected light that is coupled back into the waveguide, so as to inhibit the reflected light crosstalk intensity. In comparison, the curved waveguide structure makes a larger angle between the light-emitting surface of the chip and the cleavage cavity surface, which brings adverse effects to testing and packaging, especially multi-channel integrated packaging, while the butt-joint window structure achieves the effect of suppressing reflected light crosstalk without affecting testing and packaging, thus being a more attractive solution.
The ridge waveguide structure is a commonly used laser waveguide structure, and has the characteristics of simple manufacturing process, low cost and high reliability compared with a buried heterojunction structure. In integrated electroabsorption modulated lasers, due to the different operating principles of DFB lasers and EAM modulators, shallow ridge waveguide structures are typically employed in the DFB laser region to prevent reliability risks, while deep ridge waveguide structures are employed in the EAM modulator region to reduce intrinsic capacitance and increase modulation bandwidth. By applying the window structure anti-reflection scheme in the waveguide structure, carrier injection of the DFB laser with the shallow ridge waveguide structure can leak to a butt joint interface of the window structure and the active region, so that threshold current of the DFB laser is increased sharply, and carrier injection efficiency is reduced greatly.
Disclosure of Invention
The invention aims to provide an electroabsorption modulator laser and a preparation method thereof, which can at least solve part of defects in the prior art.
In order to achieve the above object, the embodiment of the present invention provides the following technical solutions: a method for preparing an electroabsorption modulator laser, the prepared electroabsorption modulator laser is provided with an LD area and an EAM area, and the method specifically comprises the following steps:
s1, forming a window structure at the light emitting end of the EAM region through masking, growing and etching;
s2, continuing to mask and etch to manufacture a deep isolation trench;
s3, opening an electric injection window after mask and etching, wherein the EAM window structure does not open the electric injection window;
s4, manufacturing electrodes in the LD region and the EAM region, wherein the EAM window structure is not used as an electrode;
s5, after the electrode is manufactured, the electrode is separated into a single electroabsorption modulator laser chip.
Further, in step S1, the specific manufacturing process is as follows:
s10, growing an epitaxial structure once, and then manufacturing a grating on the epitaxial structure;
s11, epitaxially growing a grating buried layer on the grating for the second time;
s12, continuing to grow a mask layer, removing a mask of the EAM region, and continuing to etch the EAM region at least until a buffer layer of the epitaxial structure is etched;
s13, sequentially butt-jointing and growing an EAM active layer and an InP layer in the EAM area;
s14, growing the mask layer again, etching to remove the mask of the light emitting end of the EAM area, and continuing etching to at least etch the buffer layer;
s15, butt-jointing and growing an InP layer at the light emitting end of the EAM area to form a window structure;
s16, growing a P-type waveguide layer and a contact layer,
and S17, continuing the mask after the growth is completed and etching the mask and the contact layer on the EAM window structure.
Further, the specific method for manufacturing the deep isolation trench comprises the following steps:
etching is carried out after the mask until the grating layer is etched,
and then shallow ridge waveguides are manufactured in the LD region and the EAM region, wherein the light emitting end of the EA region is not manufactured with a ridge waveguide,
then protecting the LD region, etching in the isolation region and the EAM region at least until the buffer layer is etched, making deep ridge waveguide,
and protecting the isolation region, the EAM region and the ridge waveguide partial region, exposing the middle part of the ridge waveguide groove of the LD region, and then continuing etching the ridge waveguide middle region of the LD region at least until the buffer layer is etched to form a deep isolation groove.
Further, etching is carried out after masking, the light-emitting end of the EAM region is protected, ridge waveguides are manufactured in the LD region and the EAM region, the region outside the ridge waveguides in the isolation region at the junction of the LD region and the EAM region is etched,
and then protecting the LD region, exposing the isolation region and the EAM region, etching the isolation region and the region which is not protected by the EAM region, and etching at least to the buffer layer so as to form a deep isolation trench in the isolation region.
Further, in the step S3, after the mask, the mask on the isolation region ridge waveguide at the junction of the LD region and the EAM region is etched away, and then the contact layer and the P-type waveguide layer on the surface of the isolation region ridge waveguide are continuously removed.
The embodiment of the invention provides another technical scheme that: an electroabsorption modulator laser comprises a DFB laser and an EAM electroabsorption modulator, wherein deep isolation grooves are formed in two sides of a ridge waveguide or isolation region of the DFB laser, and a window structure is manufactured at an optical outlet end of the EAM electroabsorption modulator.
Further, the deep isolation trench extends at least to the buffer layer of the laser, and the length of the window structure is controlled to be between 10 and 50 mu m.
Further, the isolation region is obtained by removing the contact layer and a portion of the P-type waveguide layer between the DFB laser and the EAM electro-absorption modulator.
Further, the DFB laser is a shallow ridge waveguide structure with a trench depth to its grating layer, the isolation region and the EAM electro-absorption modulator are deep ridge waveguide structures with a trench depth at least to its buffer layer.
Further, the length of the isolation region is controlled to be 20-100 mu m.
Compared with the prior art, the invention has the beneficial effects that: on the premise that an electroabsorption modulator of a ridge waveguide structure integrates a light emergent window to improve anti-reflection capability, deep isolation grooves are designed on two sides of a shallow ridge waveguide or an isolation region of a DFB laser to greatly reduce leakage of a butt joint interface of a butt joint window in the carrier injection process of the DFB laser, so that threshold current of the DFB laser is reduced, and output light power of an EML laser is improved.
Drawings
Fig. 1 is a schematic diagram of a buried grating structure of an electroabsorption modulator laser according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of an EAM area etched structure of an electro-absorption modulator laser according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of an EAM active layer structure of an electro-absorption modulator laser according to an embodiment of the present invention;
fig. 4 is a schematic diagram of a structure of an corroded light-emitting end of an electroabsorption modulator laser according to an embodiment of the present invention;
fig. 5 is a schematic view of a window structure of a light emitting end of an electroabsorption modulator laser according to an embodiment of the present invention;
fig. 6 is a schematic structural diagram of an electro-absorption modulator laser according to an embodiment of the present invention after a P-type InP waveguide layer and a contact layer are grown over the entire surface of the laser;
FIG. 7a is a schematic diagram of a deep isolation trench and isolation region of an electro-absorption modulator laser according to an embodiment of the present invention (first embodiment);
FIG. 7b is a cross-sectional view of the LD region along the direction A in FIG. 7 a;
FIG. 7c is a cross-sectional view of the isolation region of FIG. 7a along the direction B;
FIG. 7d is a cross-sectional view of the EAM region of FIG. 7a along the direction C;
FIG. 8a is a schematic diagram of a deep isolation trench and isolation region of an electro-absorption modulator laser according to an embodiment of the present invention (second embodiment);
FIG. 8b is a cross-sectional view of the LD region along the direction D in FIG. 8 a;
FIG. 8c is a cross-sectional view of the isolation region of FIG. 8a along the direction E;
FIG. 8d is a cross-sectional view of the EAM region of FIG. 8a along the direction F;
FIG. 9a is a top view of an electrode of an electro-absorption modulator laser according to an embodiment of the present invention after fabrication;
FIG. 9b is a cross-sectional view of the EAM region of FIG. 9a along the direction G.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
The embodiment of the invention provides a preparation method of an electroabsorption modulator laser, which comprises the following steps:
s1, forming a window structure at the light emitting end of the EAM region through masking, growing and etching;
s2, continuing to mask and etch to manufacture a deep isolation trench;
s3, opening an electric injection window after mask and etching, wherein the EAM window structure does not open the electric injection window;
s4, manufacturing electrodes in the LD region and the EAM region, wherein the EAM window structure is not used as an electrode;
s5, after the electrode is manufactured, the electrode is separated into a single electroabsorption modulator laser chip.
The specific preparation method of the electroabsorption modulator laser can be divided into two different embodiments for details due to different manners of manufacturing the deep isolation trenches.
Embodiment one:
(1) An InP buffer layer 2, a DFB active layer 3, an InP layer 4 and a grating layer 5 are epitaxially grown at one time by MOCVD;
(2) Manufacturing gratings on the LD side grating layer 5 by utilizing holographic or electron beam lithography, and burying the InP layer 6 by utilizing MOCVD secondary epitaxial gratings, as shown in figure 1;
(3) Growth of SiO 2 For the mask layer 7, the SiO2 on the EAM side is removed by using photoetching and etching technology, and the EAM side is etched to the InP buffer layer 2 and below by combining a dry method and a wet method, as shown in FIG. 2;
(4) In SiO form 2 As a mask layer 7, an EAM active layer 8 and an InP layer 9 are sequentially grown in a butt joint mode on the EAM side by MOCVD, see figure 3, wherein the InP layer 9 is flush with the surface of the InP layer 6;
(5) Regrowth of SiO 2 For the mask layer 7, the SiO2 of the light emitting end of the EAM side is removed by utilizing photoetching and etching technology, and the dry etching and the wet etching are combined to etch the light emitting end of the EAM side to the InP buffer layer 2 and below, as shown in fig. 4;
(6) In SiO form 2 For the mask layer 7, growing an InP layer 12 in a window structure in an MOCVD butt joint manner at the light emitting end of the EAM side, wherein the InP layer 12 is flush with the surface of the InP 6, as shown in FIG. 5;
(7) Removing the mask layer 7, and growing the whole surface P-type InP waveguide layer 10 and the contact layer 11, as shown in figure 6;
(8) Growth of SiO 2 For masking layer, photoetching, dry etching or wet etching, removing SiO on the EAM window structure 2 And a contact layer 11;
(9) Removal of SiO 2 Mask layer, regrowth SiO 2 The method comprises the steps of combining mask layer, photoetching, dry etching and wet etching, etching to a grating layer, and manufacturing shallow ridge waveguides on the LD and EAM sides, wherein a ridge waveguide is not manufactured at an EA side light emitting end;
(10) Photoresist protects LD side, dry or wet etching isolation region and EAM side ridge waveguide to InP buffer layer 2 and below, making deep ridge waveguide, see figures 7a, 7c and 7d;
(11) The isolation region is protected by photoresist, the EAM side and the ridge waveguide part region are exposed out of the ridge waveguide groove middle part of the LD region, and the wet etching is used for corroding the ridge waveguide middle region of the LD side to the InP buffer layer 2 and below to form a deep isolation groove, as shown in figures 7a and 7b;
(12) Removing the photoresist and SiO2 mask, and regrowing SiO 2 For the mask layer 15, photoetching, dry etching and wet etching are combined to remove SiO on the ridge waveguide of the isolation area at the junction of LD and EAM 2 The mask layer is used for removing the contact layer 11 and part of the P-type InP waveguide layer 10 on the ridge waveguide surface of the isolation region, as shown in FIG. 7c;
(13) Photoetching, dry etching or wet etching are combined to remove SiO on LD and EAM ridge waveguides 2 Masking, opening an electric injection window, wherein the EAM window structure does not open the electric injection window;
(14) Electrodes were fabricated on the LD side and the EAM side, wherein the EAM window structure did not make electrodes, see fig. 9.
(15) And (3) after the electrode is manufactured, thinning, sputtering, alloying, stripping, and forming a thin film into a single chip.
Embodiment two:
(1) An InP buffer layer 2, a DFB active layer 3, an InP layer 4 and a grating layer 5 are epitaxially grown at one time by MOCVD;
(2) Manufacturing gratings on the LD side grating layer 5 by utilizing holographic or electron beam lithography, and burying the InP layer 6 by utilizing MOCVD secondary epitaxial gratings, as shown in figure 1;
(3) Growing SiO2 as a mask layer 7, removing SiO2 on the EAM side by using photoetching and etching technology, and etching the EAM side to the InP buffer layer 2 or below by combining a dry method and a wet method, wherein the figure 2 is shown;
(4) Taking SiO2 as a mask layer 7, and sequentially butt-jointing and growing an EAM active layer 8 and an InP layer 9 on the EAM side by MOCVD, wherein the InP layer 9 is flush with the surface of the InP layer 6;
(5) Re-growing SiO2 as a mask layer 7, and etching the light emitting end of the EAM side to the InP buffer layer 2 and below by combining photoetching, dry etching and wet etching, as shown in figure 4;
(6) Taking SiO2 as a mask layer 7, and growing an InP layer 12 in an MOCVD butt joint manner at an EAM side light-emitting end to form a window structure, wherein the InP layer 12 is flush with the surface of InP 6, as shown in FIG. 5;
(7) Removing the mask layer 7, and growing the whole surface P-type InP waveguide layer 10 and the contact layer 11, as shown in figure 6;
(8) Growing SiO2 as a mask layer, and removing SiO2 and a contact layer 11 on the EAM window structure by combining photoetching, dry etching or wet etching; (followed by fabrication of deep isolation trenches)
(9) Removing the mask layer 7, growing SiO2 as the mask layer, and combining photoetching, dry etching and wet etching to protect the light emitting end of the EAM side, manufacturing ridge waveguides on the LD and the EAM side, and etching the area outside the ridge waveguide in the isolation area at the junction of the LD and the EAM;
(10) The photoresist protects the LD side, exposing the isolation region and the EAM region, dry etching the isolation region and the protection region of the EAM region without a mask layer to the InP buffer layer 2 and below, and forming a deep isolation trench in the isolation region, as shown in figures 8a and 8c;
(11) Removing photoresist and SiO2 mask, regrowing SiO2 as mask layer 15, photoetching, dry etching and wet etching, removing SiO2 mask layer on the ridge waveguide of the isolation region at the junction of LD and EAM, and removing contact layer 11 and part of P-type InP waveguide layer 10 on the surface of ridge waveguide of the isolation region, as shown in fig. 8a and 8c;
(12) Photoetching, dry etching or wet etching are combined, siO2 masks on LD and EAM ridge waveguides are removed, and an electric injection window is opened, wherein the EAM window structure does not open the electric injection window;
(13) Electrodes are manufactured on the LD side and the EAM side, wherein the EAM window structure is not used as an electrode, see FIG. 9;
(14) And (3) after the electrode is manufactured, thinning, sputtering, alloying, stripping, and forming a thin film into a single chip.
Referring to fig. 1 to 9, the buried structure of the electro-absorption modulated laser grating of fig. 1 specifically includes an N-type substrate 1, an InP buffer layer 2, a dfb active layer 3, an InP layer 4, a grating layer 5, and a grating buried InP layer 6. The structure diagram of the EAM area of the electroabsorption modulation laser after corrosion in FIG. 2 specifically comprises an N-type substrate 1, an InP buffer layer 2, a DFB active layer 3, an InP layer 4, a grating layer 5, a grating buried InP layer 6 and a mask layer 7. Fig. 3 is a schematic structural diagram of an active layer after growth in an EAM area of the electroabsorption modulated laser, and specifically includes an InP buffer layer 2, a mask layer 7, an EAM active layer 8, and InP 9. Fig. 4 is a schematic diagram of the structure of the etched light-emitting end of the electroabsorption modulated laser, including a mask layer 7. Fig. 5 is a schematic view of a window structure of an light emitting end of an electroabsorption modulated laser, which includes a mask layer 7 and butt-grown InP 12. Fig. 6 is a schematic diagram of the structure of an electroabsorption modulated laser after growing a P-type InP waveguide layer and a contact layer over the entire surface, including butt-grown InP 12, P-type InP waveguide layer 10, and contact layer 11.
Specifically, the embodiment of the invention provides an electroabsorption modulator laser, which consists of a DFB laser and an EAM electroabsorption modulator, wherein a window structure anti-reflection scheme is applied to a light emitting end, and deep isolation grooves are designed at two sides of a ridge waveguide or an isolation region of the DFB laser to reduce electric leakage so as to reduce the threshold current of the DFB laser and improve the output light power of an EML laser.
As an optimization scheme of the embodiment of the invention, a window structure is manufactured at the light-emitting end of the EAM electroabsorption modulator to play a role of antireflection, wherein the length of the window structure is 10-50 um, and the material is InP.
As an optimization scheme of the embodiment of the invention, the DFB laser is of a shallow ridge waveguide structure, the depth of the groove reaches the grating layer, the isolation region and the EAM electroabsorption modulator are of a deep ridge waveguide structure, and the depth of the groove reaches the InP buffer layer and below.
As an optimization scheme of the embodiment of the invention, deep isolation grooves are manufactured on two sides of a ridge waveguide or an isolation region of the DFB laser, wherein the deep isolation grooves reach an InP buffer layer and below,
as an optimization scheme of the embodiment of the invention, after the LD and EAM side deep isolation trenches are completed, an isolation region is manufactured. And removing the contact layer between the DFB and the EAM and part of the P-type InP waveguide layer to form an isolation region, wherein the length of the isolation region is 20-100um.
As an optimization scheme of the embodiment of the invention, the isolation region is manufactured, the electric injection window is opened, and the electrode is manufactured, wherein the light emitting end window structure does not open the electric injection window, and the electrode is not manufactured.
As an optimization scheme of the embodiment of the invention, the electrode is manufactured, thinned, sputtered, alloyed, stripped and thin film are performed, and the single chip is obtained.
Although embodiments of the present invention have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions and alterations can be made therein without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.
Claims (10)
1. A method for preparing an electroabsorption modulator laser, wherein the prepared electroabsorption modulator laser has an LD region and an EAM region, and specifically comprises the following steps:
s1, forming a window structure at the light emitting end of the EAM region through masking, growing and etching;
s2, continuing to mask and etch to manufacture a deep isolation trench;
s3, opening an electric injection window after mask and etching, wherein the EAM window structure does not open the electric injection window;
s4, manufacturing electrodes in the LD region and the EAM region, wherein the EAM window structure is not used as an electrode;
s5, after the electrode is manufactured, the electrode is separated into a single electroabsorption modulator laser chip.
2. The method of manufacturing an electro-absorption modulator laser according to claim 1, wherein in step S1, the specific manufacturing process is:
s10, growing an epitaxial structure once, and then manufacturing a grating on the epitaxial structure;
s11, epitaxially growing a grating buried layer on the grating for the second time;
s12, continuing to grow a mask layer, removing a mask of the EAM region, and continuing to etch the EAM region at least until a buffer layer of the epitaxial structure is etched;
s13, sequentially butt-jointing and growing an EAM active layer and an InP layer in the EAM area;
s14, growing the mask layer again, etching to remove the mask of the light emitting end of the EAM area, and continuing etching to at least etch the buffer layer;
s15, butt-jointing and growing an InP layer at the light emitting end of the EAM area to form a window structure;
s16, growing a P-type waveguide layer and a contact layer,
and S17, continuing the mask after the growth is completed and etching the mask and the contact layer on the EAM window structure.
3. The method for manufacturing the electroabsorption modulator laser according to claim 2, wherein the specific method for manufacturing the deep isolation trench is as follows:
etching is carried out after the mask until the grating layer is etched,
and then shallow ridge waveguides are manufactured in the LD region and the EAM region, wherein the light emitting end of the EA region is not manufactured with a ridge waveguide,
then protecting the LD region, etching in the isolation region and the EAM region at least until the buffer layer is etched, making deep ridge waveguide,
and protecting the isolation region, the EAM region and the ridge waveguide partial region, exposing the middle part of the ridge waveguide groove of the LD region, and then continuing etching the ridge waveguide middle region of the LD region at least until the buffer layer is etched to form a deep isolation groove.
4. A method of making an electroabsorption modulator laser as claimed in claim 2, wherein:
etching after masking to protect the light emitting end of the EAM region, manufacturing ridge waveguides in the LD region and the EAM region, etching the region outside the ridge waveguides in the isolation region at the junction of the LD region and the EAM region,
and then protecting the LD region, exposing the isolation region and the EAM region, etching the isolation region and the region which is not protected by the EAM region, and etching at least to the buffer layer so as to form a deep isolation trench in the isolation region.
5. A method of making an electroabsorption modulator laser as claimed in claim 2, wherein: in the step S3, after the mask, etching to remove the mask on the isolation region ridge waveguide at the junction of the LD region and the EAM region, and then continuing to remove the contact layer and the P-type waveguide layer on the surface of the isolation region ridge waveguide.
6. An electro-absorption modulator laser, characterized by: the dual-mode laser comprises a DFB laser and an EAM electroabsorption modulator, wherein deep isolation grooves are formed in two sides of a ridge waveguide or isolation region of the DFB laser, and a window structure is manufactured at an optical outlet end of the EAM electroabsorption modulator.
7. The electro-absorption modulator laser of claim 6, wherein: the deep isolation trench extends at least to the buffer layer of the laser, and the length of the window structure is controlled between 10 and 50 mu m.
8. The electro-absorption modulator laser of claim 6, wherein: the isolation region is obtained by removing the contact layer and part of the P-type waveguide layer between the DFB laser and the EAM electro-absorption modulator.
9. The electro-absorption modulator laser of claim 6, wherein: the DFB laser is of a shallow ridge waveguide structure, the depth of the groove reaches the grating layer of the DFB laser, the isolation region and the EAM electroabsorption modulator are of a deep ridge waveguide structure, and the depth of the groove reaches at least the buffer layer of the isolation region and the EAM electroabsorption modulator.
10. The electro-absorption modulator laser of claim 6, wherein: the length of the isolation region is controlled to be 20-100 mu m.
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