CN115459050A - Buried structure semiconductor laser and preparation method thereof - Google Patents

Buried structure semiconductor laser and preparation method thereof Download PDF

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Publication number
CN115459050A
CN115459050A CN202211219223.8A CN202211219223A CN115459050A CN 115459050 A CN115459050 A CN 115459050A CN 202211219223 A CN202211219223 A CN 202211219223A CN 115459050 A CN115459050 A CN 115459050A
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China
Prior art keywords
layer
semiconductor laser
substrate
dielectric mask
buried structure
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CN202211219223.8A
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Chinese (zh)
Inventor
梁松
郭竟
朱旭愿
李振宇
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Institute of Semiconductors of CAS
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Institute of Semiconductors of CAS
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Priority to CN202211219223.8A priority Critical patent/CN115459050A/en
Publication of CN115459050A publication Critical patent/CN115459050A/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2304/00—Special growth methods for semiconductor lasers

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

The present disclosure provides a buried structure semiconductor laser and a method for manufacturing the same, the method including: sequentially stacking and growing an active layer and a cover layer on a substrate; making a dielectric mask on the cover layer; etching the cover layer and the active layer in the area outside the mask pattern to the substrate according to the mask pattern covered on the cover layer by the dielectric mask, exposing part of the substrate and forming a fixed structure; growing a buried structure in the region where part of the substrate is exposed on two opposite sides of the fixed structure; removing part of the dielectric mask to expose part of the cover layer; a contact layer is grown on the buried structure and the exposed capping layer such that the contact layer forms a recess around the remaining dielectric mask. The preparation method is manufactured by a common contact photoetching process, so that the process complexity of the semiconductor laser is effectively reduced, and the manufacturing cost of the semiconductor laser is reduced.

Description

Buried structure semiconductor laser and preparation method thereof
Technical Field
The present disclosure relates to the field of optoelectronic devices, and more particularly, to a buried structure semiconductor laser, a method for fabricating the same, and a semiconductor laser using the same.
Background
The buried structure semiconductor laser has the advantages of low threshold current, high luminous efficiency, low power consumption, high characteristic temperature and the like, and has important application value in an optical fiber communication system. In most scenarios of using buried structure semiconductor lasers, the lasers are required to have single longitudinal mode operation characteristics, and therefore, grating structures are generally required to be manufactured in the lasers. Common grating manufacturing techniques include electron beam exposure, holographic exposure, and the like, and these manufacturing techniques usually require special equipment, so that the process complexity of laser manufacturing is greatly increased, and the buried structure semiconductor laser has higher manufacturing cost.
Disclosure of Invention
In view of the above problems, the present disclosure provides a buried structure semiconductor laser, a method of fabricating the same, and a semiconductor laser thereof to solve the above problems.
One aspect of the present disclosure provides a buried structure semiconductor laser and a method of fabricating the same, including: sequentially stacking and growing an active layer and a cover layer on a substrate; manufacturing a dielectric mask on the surface of one end of the cover layer far away from the active layer; etching the cover layer and the active layer in the area outside the mask pattern to the substrate according to the mask pattern covered on the cover layer by the dielectric mask, exposing part of the substrate and forming a fixed structure; growing buried structures on two opposite sides of the fixed structure; removing part of the dielectric mask to expose part of the cover layer; a contact layer is grown on the buried structure and the exposed capping layer such that the contact layer forms a recess around the remaining dielectric mask.
Optionally, a hydrofluoric acid or dry etching method is used to remove part of the dielectric mask.
Optionally, a dielectric mask covered in a strip shape is manufactured on the cover layer, and after a part of the dielectric mask is removed, the remaining dielectric masks are arranged on the cover layer in a rectangular shape at intervals.
Optionally, a dielectric mask is fabricated on the cap layer using a contact lithography process.
Optionally, the method further comprises: a buffer layer is prepared between the substrate and the active layer.
Optionally, the material of the dielectric mask is SiO 2 Or SiN.
Optionally, the buried structure is an inverted PN junction structure, or the buried structure is made of a semi-insulating semiconductor material.
Alternatively, the material of the substrate can adopt InP, gaAs or GaN; the material of the buffer layer is InP.
Optionally, the material of the active layer is InGaAsP or InGaAlAs, and the material of the cap layer is InP.
Another aspect of the present disclosure provides a buried structure semiconductor laser including:
the semiconductor device comprises a substrate, and a buffer layer, an active layer, a cover layer, a dielectric mask and a contact layer which are sequentially stacked on the substrate; etching the buffer layer, the active layer and the cover layer to the substrate, exposing part of the substrate and forming a fixed structure; the two opposite sides of the fixed structure are provided with buried structures; the dielectric mask is arranged on the surface of one end of the cover layer far away from the active layer; the contact layer surrounds the dielectric mask to form a recess.
The above-mentioned at least one technical scheme who adopts in this disclosed embodiment can reach following beneficial effect:
according to the preparation method, the medium mask is manufactured by adopting a common contact photoetching technology before the contact layer material grows so as to achieve single longitudinal mode work, so that the manufacturing difficulty of the laser is effectively reduced, and meanwhile, the manufacturing cost of the semiconductor laser with the buried structure is reduced.
Drawings
The above and other objects, features and advantages of the present disclosure will become more apparent from the following description of embodiments of the present disclosure with reference to the accompanying drawings, in which:
fig. 1 schematically illustrates a flow chart of a method for fabricating a buried structure semiconductor laser provided according to an embodiment of the present disclosure.
Fig. 2A schematically illustrates a starting material structure of a buried structure semiconductor laser provided in accordance with an embodiment of the present disclosure;
fig. 2B schematically illustrates a buried structure semiconductor laser provided in accordance with an embodiment of the present disclosure after etching according to a mask pattern during fabrication;
fig. 2C schematically illustrates a growth schematic of a mask structure of a buried structure semiconductor laser provided in accordance with an embodiment of the present disclosure;
fig. 2D schematically illustrates a partially removed dielectric mask in a buried structure semiconductor laser provided in accordance with an embodiment of the present disclosure;
fig. 2E schematically illustrates a growth schematic of a contact layer of a buried structure semiconductor laser provided in accordance with an embodiment of the present disclosure.
Description of reference numerals:
10-a substrate; 20-an active layer; 30-a cap layer; 40-a dielectric mask; 41-remaining dielectric mask; 50-a buried structure; 60-a contact layer; 61-a recess.
Detailed Description
Hereinafter, embodiments of the present disclosure will be described with reference to the accompanying drawings. It should be understood that these descriptions are illustrative only and are not intended to limit the scope of the present disclosure. In the following detailed description, for purposes of explanation, numerous specific details are set forth in order to provide a thorough understanding of the embodiments of the disclosure. It may be evident, however, that one or more embodiments may be practiced without these specific details. Moreover, in the following description, descriptions of well-known structures and techniques are omitted so as to not unnecessarily obscure the concepts of the present disclosure.
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the disclosure. The terms "comprises," "comprising," and the like, as used herein, specify the presence of stated features, steps, operations, and/or components, but do not preclude the presence or addition of one or more other features, steps, operations, or components.
All terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art unless otherwise defined. It is noted that the terms used herein should be interpreted as having a meaning that is consistent with the context of this specification and should not be interpreted in an idealized or overly formal sense.
Fig. 1 schematically shows a flowchart of a method for manufacturing a buried-structure semiconductor laser provided by an embodiment of the present disclosure, and fig. 2A to 2E schematically show structural diagrams corresponding to respective operations of the method for manufacturing a buried-structure semiconductor laser provided by an embodiment of the present disclosure.
As shown in fig. 1, in conjunction with fig. 2A to 2E, the preparation method may include, for example, operation S101 to operation S105.
In operation S101, an active layer 20, a capping layer 30 and a dielectric mask 40 are sequentially grown on the substrate 10 in a stack.
In an embodiment of the present disclosure, the dielectric mask 40 covered in a stripe shape may be fabricated at a central position of the cap layer 30. In addition, a contact lithography process can be used to fabricate the dielectric mask 40 on the cap layer 30, thereby effectively reducing the difficulty and cost of device fabrication. The resulting structure is shown in FIG. 2A.
In operation S102, the cap layer 30 and the active layer 20 in the region outside the mask pattern are etched to the substrate 10 according to the mask pattern covered on the cap layer 30 by the dielectric mask 40.
In one embodiment of the present disclosure, after the active layer and the cap layer are partially etched, a portion of the substrate 10 is exposed and a fixed structure is formed; the fixed structure may be a trapezoid structure with a wide bottom and a narrow top, or the cap layer 30 and the active layer 20 may be etched into structures with other shapes according to actual needs, which is not limited herein. The resulting structure is shown in FIG. 2B.
In operation S103, buried structures 50 are grown on opposite sides of the fixed structure.
In one embodiment of the present disclosure, after the active layer and the cap layer are partially etched, the surface of the device is strictly cleaned, and then the buried structure 50 is grown on the substrate. In addition, the buried structure 50 is an inverted PN junction structure, or the buried structure 50 uses a semi-insulating semiconductor material. The resulting structure is shown in FIG. 2C.
In operation S104, a portion of the dielectric mask 40 is removed, exposing a portion of the cap layer 30.
In an embodiment of the present disclosure, a hydrofluoric acid or dry etching method may be used to remove a portion of the dielectric mask 40.
The width of the remaining dielectric masks 41 is w, the width between the remaining dielectric masks 41 is d, and w and d are both in the micrometer range, and the numerical range can be limited according to actual needs. After removing part of the dielectric mask 40, the remaining dielectric masks 41 are arranged on the cap layer 30 in a rectangular shape at intervals. The dielectric mask 40 may be present in the entire semiconductor laser or may be present in a partial region of the semiconductor laser. The resulting structure is shown in fig. 2D.
In operation S104, a contact layer 60 is grown on the buried structure 50 and the exposed cap layer 30 such that the contact layer 60 surrounds the remaining dielectric mask 41 to form a recess 61.
In an embodiment of the present disclosure, the recessed portion 61 is a rectangular frustum with a small bottom surface and a large top surface, and in a practical application process, the recessed portion 61 may be changed into a structure with another shape, which is not limited herein, as long as the light propagation is periodically modulated by the recessed portion 61, so as to obtain single longitudinal mode light emission. The resulting structure is shown in FIG. 2E.
In an embodiment of the present disclosure, a buffer layer may be prepared between the substrate 10 and the active layer 20. The buffer layer can better bear the pressure of the active layer 20, the cover layer 30 and other structures on the substrate 10, and plays a role in buffering the stress generated by the direct contact between the substrate 10 and the active layer 20.
In an embodiment of the present disclosure, the material of the substrate 10 is InP; the buffer layer is made of InP; the material of the active layer 20 is InGaAsP; the material of the cap layer 30 is InP; the material of the dielectric mask 40 is SiO 2 . Alternatively, the material of the substrate 10 may also be GaAs or GaN; the material of the active layer 20 may also be InGaAlAs; the dielectric mask 40 may also be formed of SiN.
In an embodiment of the present disclosure, the material of the contact layer 60 is InP, and the growth of the contact layer 60 can realize a waveguide structure for single-mode operation, thereby reducing the process complexity of the device and facilitating the manufacturing.
Based on the same inventive concept, the present disclosure also provides, in another aspect, a buried structure semiconductor laser,
as shown in fig. 2E, the buried structure semiconductor laser includes:
the semiconductor device comprises a substrate 10, and a buffer layer, an active layer 20, a cover layer 30, a dielectric mask 40 and a contact layer 60 which are sequentially stacked on the substrate 10;
the substrate 10 is arranged at the bottom, the contact layer 60 is arranged at the top, the buffer layer, the active layer 20 and the cover layer 30 are etched to the substrate 10, part of the substrate 10 is exposed, and a fixed structure is formed; buried structures 50 are provided at opposite sides of the fixed structure; the dielectric mask 40 is arranged on the surface of one end of the cover layer 30 far away from the active layer 20; the contact layer 60 surrounds the dielectric mask 40 to form a recess 61.
It should be noted that the embodiment of the buried structure semiconductor laser corresponds to the embodiment of the method for manufacturing the buried structure semiconductor laser, and the specific implementation details and the technical effects thereof are similar or identical to those of the embodiment of the method for manufacturing the buried structure semiconductor laser, and are not described herein again.
Those skilled in the art will appreciate that various combinations and/or combinations of features recited in the various embodiments and/or claims of the present disclosure can be made, even if such combinations or combinations are not expressly recited in the present disclosure. In particular, various combinations and/or combinations of the features recited in the various embodiments and/or claims of the present disclosure may be made without departing from the spirit or teaching of the present disclosure. All such combinations and/or associations are within the scope of the present disclosure.
The embodiments of the present disclosure have been described above. However, these examples are for illustrative purposes only and are not intended to limit the scope of the present disclosure. Although the embodiments are described separately above, this does not mean that the measures in the embodiments cannot be used advantageously in combination. The scope of the disclosure is defined by the appended claims and equivalents thereof. Various alternatives and modifications can be devised by those skilled in the art without departing from the scope of the present disclosure, and such alternatives and modifications are intended to be within the scope of the present disclosure.

Claims (9)

1. A method for fabricating a buried structure semiconductor laser, comprising:
sequentially stacking and growing an active layer (20), a cover layer (30) and a dielectric mask (40) on a substrate (10);
etching the cover layer (30) and the active layer (20) to the substrate (10) in the area outside the mask pattern according to the mask pattern covered on the cover layer (30) by the dielectric mask (40), exposing a part of the substrate (10) and forming a fixed structure;
growing buried structures (50) on opposite sides of the fixed structure;
removing a portion of the dielectric mask (40) to expose a portion of the cap layer (30);
growing a contact layer (60) on the buried structure (50) and the exposed cap layer (30) such that the contact layer (60) forms a recess (61) surrounding the remaining dielectric mask (40).
2. A method for fabricating a buried structure semiconductor laser according to claim 2, wherein said dielectric mask (40) is formed on said cap layer (30) in a strip shape, and after removing a portion of said dielectric mask (40), said remaining dielectric masks (41) are arranged on said cap layer (30) in a rectangular shape at intervals.
3. Method for fabricating a buried structure semiconductor laser according to claim 1, characterized in that said dielectric mask (40) is made on said cap layer (30) using a contact lithography process.
4. A method of fabricating a buried structure semiconductor laser as claimed in claim 1, further comprising:
a buffer layer is prepared between the substrate (10) and the active layer (20).
5. Method for fabricating a buried structure semiconductor laser according to claim 1, characterized in that the material of the dielectric mask (40) is SiO 2 Or SiN.
6. A method of fabricating a buried structure semiconductor laser according to claim 1, characterized in that the buried structure (50) is an inverted PN junction structure, or the buried structure (50) is of a semi-insulating semiconductor material.
7. A method of fabricating a buried structure semiconductor laser as claimed in claim 1 wherein the substrate (10) is of InP, gaAs or GaN; the buffer layer is made of InP.
8. A method of fabricating a buried structure semiconductor laser as claimed in claim 1, wherein the material of the active layer (20) is InGaAsP or InGaAlAs and the material of the cap layer (30) is InP.
9. A buried structure semiconductor laser made using the method of any of claims 1-9, comprising:
the semiconductor device comprises a substrate (10), and an active layer (20), a cover layer (30), a dielectric mask (40) and a contact layer (60) which are sequentially stacked on the substrate (10);
wherein the buffer layer, the active layer (20) and the cover layer (30) are etched to the substrate (10), part of the substrate (10) is exposed, and a fixed structure is formed; buried structures (50) are arranged on two opposite sides of the fixed structure; the dielectric mask (40) is arranged on the surface of one end of the cover layer (30) far away from the active layer (20); the contact layer (60) surrounds the dielectric mask (40) to form a recess (61).
CN202211219223.8A 2022-09-30 2022-09-30 Buried structure semiconductor laser and preparation method thereof Pending CN115459050A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202211219223.8A CN115459050A (en) 2022-09-30 2022-09-30 Buried structure semiconductor laser and preparation method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202211219223.8A CN115459050A (en) 2022-09-30 2022-09-30 Buried structure semiconductor laser and preparation method thereof

Publications (1)

Publication Number Publication Date
CN115459050A true CN115459050A (en) 2022-12-09

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