CN114649745A - Buried structure semiconductor laser and preparation method thereof - Google Patents
Buried structure semiconductor laser and preparation method thereof Download PDFInfo
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- CN114649745A CN114649745A CN202210260922.0A CN202210260922A CN114649745A CN 114649745 A CN114649745 A CN 114649745A CN 202210260922 A CN202210260922 A CN 202210260922A CN 114649745 A CN114649745 A CN 114649745A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2304/00—Special growth methods for semiconductor lasers
Abstract
The present disclosure provides a buried structure semiconductor laser, including: the semiconductor device comprises a substrate, a buffer layer, an active layer, a cover layer, a contact layer and a buried layer; the substrate is arranged at the bottom, the contact layer is arranged at the top, the buffer layer, the active layer and the cover layer are arranged between the substrate and the contact layer from bottom to top, and the two sides of the buffer layer, the active layer and the cover layer are buried by the buried layers; the buffer layer, the active layer and the cover layer are uniformly divided into a laser area and a spot size converter area, the laser area is a rectangular area, and the spot size converter area is a trapezoidal area which gradually narrows towards the direction far away from the laser area by taking one side of the laser area as an initial width; the contact area of the substrate and the buffer layer is etched to have the same shape as the buffer layer. The disclosure also provides a preparation method of the buried structure semiconductor laser.
Description
Technical Field
The disclosure relates to the technical field of optoelectronic devices, in particular to a buried structure semiconductor laser and a preparation method thereof.
Background
Semiconductor lasers are important light source devices for fiber optic communication systems. When a common ridge waveguide semiconductor laser device is directly coupled with an optical fiber, the mode field mismatch between the optical fiber and the semiconductor waveguide can result in a coupling loss as high as 10dB, and the alignment tolerance is small, which undoubtedly increases the packaging difficulty and cost. The spot size converter can almost adiabatically convert the asymmetric near field distribution of the waveguide into a symmetric input or output near field, which can improve the coupling efficiency of the active device and the optical fiber and the coupling tolerance. However, the high quality spot size converter waveguide tip is small in size and difficult to fabricate using conventional photolithographic techniques, resulting in higher fabrication costs for devices integrated with the spot size converter.
Disclosure of Invention
In view of the above problems, the present invention provides a buried structure semiconductor laser and a method for manufacturing the same to solve the above problems.
One aspect of the present disclosure provides a buried structure semiconductor laser including:
the semiconductor device comprises a substrate, a buffer layer, an active layer, a cover layer, a contact layer and a buried layer;
the substrate is arranged at the bottom, the contact layer is arranged at the top, the buffer layer, the active layer and the cover layer are arranged between the substrate and the contact layer from bottom to top, and two sides of the buffer layer, the active layer and the cover layer are buried by the buried layer;
the buffer layer, the active layer and the cover layer are uniformly divided into a laser area and a spot size converter area, the laser area is a rectangular area, and the spot size converter area is a trapezoidal area which gradually narrows towards the direction far away from the laser area by taking one side of the laser area as an initial width;
the contact area of the substrate and the buffer layer is etched to be the same as the shape of the buffer layer.
Optionally, the laser region and the spot size converter region of the buffer layer and the cap layer are the same in size, and the width of the laser region and the spot size converter region of the active layer is smaller than that of the buffer layer and the cap layer.
Optionally, the difference between the widths of the laser region, the spot-size converter region of the active layer and the corresponding regions of the buffer layer and the cap layer is the same.
Optionally, the buried layer is a current blocking structure formed by an inverted PN junction, or the material of the buried layer is a semi-insulating buried material.
Optionally, the substrate is made of InP, the buffer layer is made of InP, the active layer is made of InGaAsP or InGaAlAs, the cap layer is made of InP, and the buried layer is made of a current blocking structure material formed by an InP reverse PN junction or a semi-insulating InP material.
An aspect of the present disclosure also provides a method of fabricating a buried structure semiconductor laser, the method including:
sequentially growing a buffer layer, an active layer and a cover layer on a substrate;
manufacturing a dielectric mask on the cover layer;
etching the cover layer, the active layer and the buffer layer in the region outside the mask pattern to the substrate according to the pattern of the medium mask, so that the buffer layer, the active layer and the cover layer form a laser region and a spot size converter region, wherein the laser region is a rectangular region, and the spot size converter region is a trapezoidal region gradually narrowing towards the direction far away from the laser region by taking one side of the laser region as an initial width;
growing buried layers on two sides of the buffer layer, the active layer and the cover layer;
and removing the medium mask, and growing a contact layer on the cover layer.
Optionally, the etching, according to the pattern on the dielectric mask, the cap layer, the active layer, and the buffer layer in the region outside the mask pattern to the substrate includes:
etching the cover layer, the active layer and the buffer layer outside the mask pattern to the substrate according to the pattern of the medium mask to form a laser region and a spot size converter region of the cover layer and the buffer layer;
and etching the active layer according to the pattern of the medium mask to ensure that the width difference values of the laser region and the spot size converter region of the active layer are the same as the width difference values of the corresponding regions of the buffer layer and the cover layer.
The at least one technical scheme adopted in the embodiment of the disclosure can achieve the following beneficial effects:
according to the semiconductor laser with the buried structure, the laser and the spot size converter are integrated, the coupling efficiency of an active device and an optical fiber can be improved, the spot size converter with high quality can be obtained by adopting a common photoetching process, the yield of device manufacturing is improved, and the device cost is reduced.
Drawings
For a more complete understanding of the present disclosure and the advantages thereof, reference is now made to the following descriptions taken in conjunction with the accompanying drawings, in which:
fig. 1 schematically illustrates a device material diagram of a buried structure semiconductor laser provided by an embodiment of the present disclosure;
fig. 2 schematically illustrates a dielectric mask pattern diagram of a buried structure semiconductor laser provided by an embodiment of the present disclosure;
fig. 3 schematically illustrates a laser region material structure diagram of a buried structure semiconductor laser provided by an embodiment of the present disclosure after removing a material outside a dielectric mask;
fig. 4A schematically illustrates a material structure diagram of a laser region after etching an active layer provided by an embodiment of the present disclosure;
FIG. 4B is a schematic diagram illustrating a material structure of a spot-size converter region after etching an active layer according to an embodiment of the disclosure;
FIG. 5A schematically illustrates a material structure of a laser region after mask growth provided by an embodiment of the present disclosure;
fig. 5B schematically illustrates a material structure diagram of the pattern converter region after mask growth provided by the embodiment of the present disclosure;
fig. 6A schematically illustrates a material structure diagram of a laser region after a contact layer material provided by an embodiment of the present disclosure is grown;
fig. 6B schematically illustrates a material structure diagram of the speckle converter region after the contact layer material provided by the embodiment of the disclosure is grown;
description of reference numerals:
a substrate-10; a buffer layer-20; an active layer-30; a cap layer-40; a dielectric mask-50; buried material-60; contact layer-70.
Detailed Description
Hereinafter, embodiments of the present disclosure will be described with reference to the accompanying drawings. It should be understood that the description is illustrative only and is not intended to limit the scope of the present disclosure. In the following detailed description, for purposes of explanation, numerous specific details are set forth in order to provide a thorough understanding of the embodiments of the disclosure. It may be evident, however, that one or more embodiments may be practiced without these specific details. Moreover, in the following description, descriptions of well-known structures and techniques are omitted so as to not unnecessarily obscure the concepts of the present disclosure.
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the disclosure. The terms "comprises," "comprising," and the like, as used herein, specify the presence of stated features, steps, operations, and/or components, but do not preclude the presence or addition of one or more other features, steps, operations, or components.
All terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art unless otherwise defined. It is noted that the terms used herein should be interpreted as having a meaning that is consistent with the context of this specification and should not be interpreted in an idealized or overly formal sense.
The embodiment of the disclosure provides a semiconductor laser with a buried structure, wherein a spot size converter is integrated in the laser, the laser can be obtained by adopting a common photoetching process, and the manufacturing cost is low.
The buried structure semiconductor laser includes a substrate 10, a buffer layer 20, an active layer 30, a cap layer 40, a contact layer 70, and a buried layer 60; wherein, the substrate 10 is arranged at the bottom, the contact layer 70 is arranged at the top, the buffer layer 20, the active layer 30 and the cap layer 40 are arranged between the substrate 10 and the contact layer 70 from bottom to top, and the two sides are buried by the buried layer 60; the buffer layer 20, the active layer 30 and the cover layer 40 are divided into a laser area and a spot size converter area, the laser area is a rectangular area, and the spot size converter area is a trapezoidal area which gradually narrows towards the direction far away from the laser area by taking one side of the laser area as an initial width; the contact area of the substrate 10 and the buffer layer 20 is etched to have the same shape as the buffer layer 20.
Wherein the difference in width of the laser region, the spot size converter region of the active layer 30 and the corresponding regions of the buffer layer 20 and the cap layer 40 is the same.
Alternatively, the buried layer 60 is a current blocking structure formed of an inverted PN junction, or the material of the buried layer 60 is a semi-insulating buried material.
Optionally, the substrate 10 is made of InP, the buffer layer 20 is made of InP, the active layer 30 is made of InGaAsP or InGaAlAs, the cap layer 40 is made of InP, and the buried layer 60 is made of a current blocking structure material formed by an InP reverse PN junction or a semi-insulating InP material.
Another embodiment of the present disclosure provides a method of fabricating the buried structure semiconductor laser, including operations S1 through S5.
Fig. 1 to 3, 4A to 6A, and 4B to 6B show structural changes of the buried structure semiconductor laser in the manufacturing process, and the manufacturing process of the buried structure semiconductor laser will be described with reference to fig. 1 to 3, 4A to 6A, and 4B to 6B, and the structure of the buried structure semiconductor laser will be further described.
In operation S1, a buffer layer 20, an active layer 30, and a cap layer 40 are sequentially grown on a substrate 10.
In operation S2, a dielectric mask 50 is fabricated on the cap layer 40.
As shown in fig. 1, a substrate 10, a buffer layer 20, an active layer 30, a cap layer 40, and a dielectric mask 50 are sequentially grown.
As shown in fig. 2, a mask pattern is formed on the dielectric mask 50, wherein solid lines represent the remaining areas of the buffer layer 20 and the cap layer 40 after etching, and dotted lines represent the remaining areas of the active layer 30 after etching. Wherein the left area in fig. 2 is the laser LD area, and the width in the solid line graph is W2; the area to the right of fig. 2 is the spot-size converter SSC, which in the solid line graph decreases in width from W2 at the laser end to N2; the laser LD region has a width W1 in the dotted line diagram, and the width is a narrower than the solid line diagram on both the left and right sides; the spot size converter SSC gradually decreases in width from W1 at the laser end to N1 in the dotted line diagram, and is also narrower in width by a on both the left and right sides than in the solid line diagram.
In operation S3, the cap layer 40, the active layer 30, and the buffer layer 20 in the region other than the mask pattern are etched to the substrate 10 according to the pattern of the dielectric mask 50, so that the buffer layer 20, the active layer 30, and the cap layer 40 form a laser region and a speckle converter region, the laser region is a rectangular region, and the speckle converter region is a trapezoidal region gradually narrowing from one side of the laser region to a direction away from the laser region.
Since the active layer 30 has a smaller etching width than the buffer layer 20 and the cap layer 40, the etching step is divided into two steps.
And step 31, etching the cover layer 40, the active layer 30 and the buffer layer 20 in the region outside the mask pattern to the substrate 10 according to the pattern of the dielectric mask 50 to form the laser region and the spot size converter region of the cover layer 40 and the buffer layer 20.
As shown in fig. 3, the cap layer 40, the active layer 30 and the buffer layer 20 outside the mask pattern are removed to the substrate 10 by dry etching or wet etching according to the solid line diagram shown in fig. 2.
Step 32, etching the active layer 30 according to the pattern of the mask 50, so that the laser region and the spot size converter region of the active layer 30 have the same width difference with the corresponding regions of the buffer layer 20 and the cover layer 40.
As shown in fig. 4A and 4B, the active material 30 is selectively etched by wet etching so that its width is a smaller than the width of the dielectric mask 50 on both the left and right sides. In the laser LD region, its width is uniform W1, and in the spot size converter SSC region, its width gradually decreases from W1 to N1.
Referring to fig. 4A and 4B, the laser regions and the spot size converter regions of the buffer layer 20 and the capping layer 40 are the same in size, and the widths of the laser region and the spot size converter region of the active layer 30 are a smaller than the widths of the buffer layer 20 and the capping layer 40 on both left and right sides.
In operation S4, buried layers 60 are grown on both sides of the buffer layer 20, the active layer 30, and the cap layer 40.
Referring to fig. 5A and 5B, a buried material is grown on both sides of the buffer layer 20, the active layer 30, and the cap layer 40 to form a buried layer 60, which may be a current blocking structure formed by an inverse pn junction or a semi-insulating material.
In operation S5, the dielectric mask 50 is removed and a contact layer 70 is grown on the cap layer 40.
As shown in fig. 6A and 6B, a contact layer 70 is grown on the cap layer 40 to cover the upper surface of the buried layer 60.
According to the semiconductor laser with the buried structure prepared by the method, in the laser LD region of the device, the quantum well active layer 30 is large in width and W1, so that a good optical field limiting effect can be provided, and high light-emitting quality can be obtained. In the spot-size converter SSC region of the device, the quantum well active layer 30 has a gradually decreasing width, N1 at the light exit end face of the device. The width is small, the limit to an optical field is weakened, and a near-field light spot on the end face of the device is enlarged, so that the far-field divergence angle is reduced.
The width of the active layer of the spot size converter tip quantum well is N1, which is 2a less than the width N2 of the dielectric mask 50. Because N2 is large, the medium mask 50 can be manufactured by common photoetching technology, thereby reducing the difficulty of manufacturing the spot-size converter and being beneficial to reducing the chip cost. The quantum well active material 30 of the device may also be InGaAlAs material. The tapering of the width of the spot-size converter area dielectric mask 50 may be in a linear or non-linear manner.
It will be appreciated by a person skilled in the art that various combinations or/and combinations of features recited in the various embodiments of the disclosure and/or in the claims may be made, even if such combinations or combinations are not explicitly recited in the disclosure. In particular, various combinations and/or combinations of the features recited in the various embodiments and/or claims of the present disclosure may be made without departing from the spirit or teaching of the present disclosure. All such combinations and/or associations are within the scope of the present disclosure.
While the disclosure has been shown and described with reference to certain exemplary embodiments thereof, it will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the disclosure as defined by the appended claims and their equivalents. Accordingly, the scope of the present disclosure should not be limited to the above-described embodiments, but should be defined not only by the appended claims, but also by equivalents thereof.
Claims (7)
1. A buried structure semiconductor laser, comprising:
a substrate (10), a buffer layer (20), an active layer (30), a cap layer (40), a contact layer (70), and a buried layer (60);
the substrate (10) is arranged at the bottom, the contact layer (70) is arranged at the top, the buffer layer (20), the active layer (30) and the cover layer (40) are arranged between the substrate (10) and the contact layer (70) from bottom to top, and two sides of the buffer layer, the active layer and the cover layer are buried by the buried layer (60);
the buffer layer (20), the active layer (30) and the cover layer (40) are divided into a laser area and a spot size converter area, the laser area is a rectangular area, and the spot size converter area is a trapezoidal area which gradually narrows towards the direction far away from the laser area by taking one side of the laser area as an initial width;
the contact area of the substrate (10) and the buffer layer (20) is etched to be the same as the shape of the buffer layer (20).
2. Buried structure semiconductor laser according to claim 1, characterized in that the buffer layer (20), the laser area of the cap layer (40) and the spot converter area are the same size, the laser area and the spot converter area of the active layer (30) having smaller width than the buffer layer (20) and the cap layer (40).
3. Buried structure semiconductor laser according to claim 2, characterized in that the laser region, the spot-size converter region of the active layer (30) and the corresponding regions of the buffer layer (20) and the cap layer (40) have the same difference in width.
4. Buried structure semiconductor laser according to claim 1, characterized in that said buried layer (60) is a current blocking structure of an inverted PN junction or that the material of said buried layer (60) is a semi-insulating buried material.
5. Buried structure semiconductor laser according to claim 1, characterized in that the material of the substrate (10) is InP, the material of the buffer layer (20) is InP, the material of the active layer (30) is InGaAsP or InGaAlAs, the material of the cap layer (40) is InP, and the material of the buried layer (60) is a current blocking structure material of InP reverse PN junction or a semi-insulating InP material.
6. A method of fabricating a buried structure semiconductor laser, the method comprising:
growing a buffer layer (20), an active layer (30) and a cover layer (40) on a substrate (10) in sequence;
manufacturing a dielectric mask (50) on the cover layer (40);
according to the mask pattern of the medium mask (50), etching the cover layer (40), the active layer (30) and the buffer layer (20) in the region outside the mask pattern to the substrate (10) to enable the buffer layer (20), the active layer (30) and the cover layer (40) to form a laser region and a spot size converter region, wherein the laser region is a rectangular region, and the spot size converter region is a trapezoidal region gradually narrowing towards the direction far away from the laser region by taking one side of the laser region as an initial width;
growing buried layers (60) on two sides of the buffer layer (20), the active layer (30) and the cover layer (40);
removing the dielectric mask (50) and growing a contact layer (70) on the cover layer (40).
7. The method of claim 6, wherein etching the cap layer (40), the active layer (30), and the buffer layer (20) to the substrate (10) in the region outside the mask pattern according to the pattern on the dielectric mask (50) comprises:
according to the pattern of the medium mask (50), etching the cover layer (40), the active layer (30) and the buffer layer (20) in the region outside the mask pattern to the substrate (10) to form a laser region and a spot size converter region of the cover layer (40) and the buffer layer (20);
and etching the active layer (30) according to the pattern of the medium mask (50) to ensure that the width difference of the laser region and the spot size converter region of the active layer (30) is the same as that of the corresponding regions of the buffer layer (20) and the cover layer (40).
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| CN202210260922.0A CN114649745A (en) | 2022-03-16 | 2022-03-16 | Buried structure semiconductor laser and preparation method thereof |
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| CN202210260922.0A CN114649745A (en) | 2022-03-16 | 2022-03-16 | Buried structure semiconductor laser and preparation method thereof |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115826138A (en) * | 2022-12-14 | 2023-03-21 | 杭州泽达半导体有限公司 | Light spot converter and manufacturing method thereof |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115826138A (en) * | 2022-12-14 | 2023-03-21 | 杭州泽达半导体有限公司 | Light spot converter and manufacturing method thereof |
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