CN115826138A - Light spot converter and manufacturing method thereof - Google Patents
Light spot converter and manufacturing method thereof Download PDFInfo
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- CN115826138A CN115826138A CN202211606906.9A CN202211606906A CN115826138A CN 115826138 A CN115826138 A CN 115826138A CN 202211606906 A CN202211606906 A CN 202211606906A CN 115826138 A CN115826138 A CN 115826138A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 34
- 239000010410 layer Substances 0.000 claims abstract description 132
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 58
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 45
- 238000005530 etching Methods 0.000 claims abstract description 45
- 239000002243 precursor Substances 0.000 claims abstract description 43
- 230000010363 phase shift Effects 0.000 claims abstract description 29
- 239000000758 substrate Substances 0.000 claims abstract description 24
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 22
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 22
- 239000011241 protective layer Substances 0.000 claims abstract description 17
- 239000011159 matrix material Substances 0.000 claims abstract description 11
- 238000000034 method Methods 0.000 claims description 33
- 229910052751 metal Inorganic materials 0.000 claims description 18
- 239000002184 metal Substances 0.000 claims description 18
- 238000001020 plasma etching Methods 0.000 claims description 12
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims description 8
- CPELXLSAUQHCOX-UHFFFAOYSA-N Hydrogen bromide Chemical compound Br CPELXLSAUQHCOX-UHFFFAOYSA-N 0.000 claims description 4
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 claims description 4
- 238000007738 vacuum evaporation Methods 0.000 claims description 4
- 238000003631 wet chemical etching Methods 0.000 claims description 4
- 230000008021 deposition Effects 0.000 claims description 3
- 239000007789 gas Substances 0.000 claims description 3
- 229910000042 hydrogen bromide Inorganic materials 0.000 claims description 2
- 230000003287 optical effect Effects 0.000 claims 2
- 230000000694 effects Effects 0.000 abstract description 7
- 238000001259 photo etching Methods 0.000 abstract description 7
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 230000008569 process Effects 0.000 description 7
- 238000010586 diagram Methods 0.000 description 4
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 3
- 230000009471 action Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000012495 reaction gas Substances 0.000 description 3
- 238000010894 electron beam technology Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- KXNLCSXBJCPWGL-UHFFFAOYSA-N [Ga].[As].[In] Chemical compound [Ga].[As].[In] KXNLCSXBJCPWGL-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000016 photochemical curing Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention relates to the field of semiconductor light guide, in particular to a light spot converter and a manufacturing method thereof.A plurality of epitaxial layers are sequentially grown on an n-InP substrate to obtain an etched matrix; arranging a negative photoresist layer on the surface of the matrix to be tested, which is far away from the n-InP substrate; exposing the negative photoresist layer by using the half-period phase shift film as a mask; exposing the negative photoresist layer by using a general mask to obtain an SSC tail shading area with a preset shape on the negative photoresist layer; removing the negative photoresist layer of the SSC head shading area and the SSC tail shading area, and exposing the silicon dioxide epitaxial layer below to obtain an SSC precursor; and etching the SSC precursor and filling a protective layer to obtain the light spot converter. The invention utilizes the interference effect generated at the edge of the half-period phase shift film to realize SSC waveguide pattern photoetching with the resolution smaller than that of an exposure machine.
Description
Technical Field
The invention relates to the field of semiconductor light guide, in particular to a light spot converter and a manufacturing method thereof.
Background
Fig. 1 to 3 show basic structural diagrams of the spot converter, in which fig. 1 isbase:Sub>A top view, fig. 2 isbase:Sub>A cross-sectional view taken atbase:Sub>A-base:Sub>A 'in fig. 1, fig. 3 isbase:Sub>A cross-sectional view taken at B-B' in fig. 1, andbase:Sub>A light beam enters the spot converter through the waveguide, and the spot size of the light beam is changed from S1 to S2.
As shown, the width of the waveguide is generally designed to be about 1.6um micrometer, while the design width of the SSC (spot converter) area is much lower, generally about 0.3um micrometer, which is far lower than the resolution of the exposure machine used in the current mainstream lithography machine, so that it is quite difficult to obtain the SSC area with the ideal width by using the exposure machine in the prior art, and meanwhile, the size of the spot is extremely sensitive to the width of the waveguide carrier, which in turn causes that any width change of the waveguide carrier (including the waveguide area and the SSC area in fig. 1) greatly affects the final spot conversion effect. The current solution to the lack of precision of the exposure machine is usually to directly write such fine line pattern (e.g. 0.2 um) by using Electron Beam (EB), however, it is not easy to perfectly align with the waveguide pattern (e.g. 1.6 um) formed by the conventional lithography machine, and such alignment error can cause the spot shape of the emergent beam in the SSC region to be degraded, resulting in poor coupling efficiency with any external component (e.g. lens or other waveguide)
Therefore, a problem to be solved by those skilled in the art needs to be solved how to find a simple and easy method for improving the resolution of an exposure machine and realizing high-precision pattern exposure, thereby improving the production efficiency and yield of a light spot converter.
Disclosure of Invention
The invention aims to provide a light spot converter and a manufacturing method thereof, and aims to solve the problems of low production efficiency and low yield of the light spot converter caused by poor resolution of an exposure machine in the prior art.
In order to solve the above technical problem, the present invention provides a method for manufacturing a light spot converter, including:
sequentially epitaxially growing an n-InP epitaxial layer, an active layer, a p-InP epitaxial layer, a p-InGaAs epitaxial layer and a silicon dioxide epitaxial layer on an n-InP substrate to obtain an etching matrix;
arranging a negative photoresist layer on the surface of the matrix to be tested, which is far away from the n-InP substrate;
exposing the negative photoresist layer by using the half-period phase shift film as a mask, and obtaining an SSC head shading area in a preset shape on the negative photoresist layer corresponding to the edge of the half-period phase shift film;
exposing the negative photoresist layer by using a general mask to obtain an SSC tail shading area with a preset shape on the negative photoresist layer;
removing the negative photoresist layer of the SSC head shading area and the SSC tail shading area, and exposing the silicon dioxide epitaxial layer below to obtain an SSC precursor;
and etching the SSC precursor and filling a protective layer to obtain the light spot converter.
Optionally, in the method for manufacturing the light spot converter, the etching the SSC precursor and filling a protective layer to obtain the light spot converter includes:
arranging a mask metal layer on the surface of the SSC precursor far away from the n-InP substrate, and removing the residual negative photoresist layer on the SSC precursor;
and etching the SSC precursor without the negative photoresist layer to the n-InP epitaxial layer, and refilling a protective layer to obtain the light spot converter.
Optionally, in the method for manufacturing the light spot converter, the etching the SSC precursor from which the negative photoresist layer is removed to the n-InP epitaxial layer, and refilling a protective layer to obtain the light spot converter includes:
etching the silicon dioxide epitaxial layer for the first time by using the residual mask metal layer;
removing the mask metal layer on the SSC precursor subjected to the primary etching;
and with the residual silicon dioxide epitaxial layer as a mask, performing secondary etching on the SSC precursor until the n-InP epitaxial layer is formed, and refilling a protective layer to obtain the light spot converter.
Optionally, in the manufacturing method of the light spot converter, the primary etching is reactive ion etching.
Optionally, in the manufacturing method of the light spot converter, a reaction gas of the reactive ion etching is carbon tetrafluoride.
Optionally, in the manufacturing method of the light spot converter, the secondary etching is reactive ion etching or wet chemical etching.
Optionally, in the manufacturing method of the light spot converter, when the secondary etching is reactive ion etching, the corresponding reaction gas is hydrogen bromide.
Optionally, in the method for manufacturing the spot converter, the disposing a mask metal layer on the surface of the SSC precursor away from the n-InP substrate includes:
and carrying out vacuum evaporation deposition on a mask metal layer on the surface of the SSC precursor far away from the n-InP substrate.
Optionally, in the manufacturing method of the speckle converter, the exposure is performed by an i-line stepper.
A facula converter is a device obtained by the manufacturing method of the facula converter.
The manufacturing method of the light spot converter provided by the invention comprises the steps of sequentially epitaxially growing an n-InP epitaxial layer, an active layer, a p-InP epitaxial layer, a p-InGaAs epitaxial layer and a silicon dioxide epitaxial layer on an n-InP substrate to obtain an etching substrate; arranging a negative photoresist layer on the surface of the matrix to be tested, which is far away from the n-InP substrate; exposing the negative photoresist layer by using the half-period phase shift film as a mask, and obtaining an SSC head shading area in a preset shape on the negative photoresist layer corresponding to the edge of the half-period phase shift film; exposing the negative photoresist layer by using a general mask to obtain an SSC tail shading area with a preset shape on the negative photoresist layer; removing the negative photoresist layer of the SSC head shading area and the SSC tail shading area, and exposing the silicon dioxide epitaxial layer below to obtain an SSC precursor; and etching the SSC precursor and filling a protective layer to obtain the light spot converter.
The phase shift film is combined with a traditional photoetching exposure machine, a 'dark area' smaller than the resolution of the exposure machine is formed by utilizing the interference effect generated at the edge of the half-period phase shift film, and the negative photoresist layer is matched to realize SSC waveguide pattern photoetching smaller than the resolution of the exposure machine on the premise of not replacing equipment. The invention also provides a light spot converter with the beneficial effects.
Drawings
In order to more clearly illustrate the embodiments or technical solutions of the present invention, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art that other drawings can be obtained based on these drawings without creative efforts.
Fig. 1 to 3 are schematic structural diagrams of a light spot converter in the prior art;
fig. 4 is a schematic flowchart of a method for manufacturing a light spot converter according to an embodiment of the present invention;
fig. 5 to 12 are process flow diagrams of an embodiment of a method for manufacturing a light spot converter according to the present invention.
Detailed Description
In order that those skilled in the art will better understand the disclosure, the invention will be described in further detail with reference to the accompanying drawings and specific embodiments. It is to be understood that the described embodiments are merely exemplary of the invention, and not restrictive of the full scope of the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It should be noted that the spot converter will be abbreviated as SSC in the following of the present invention.
The core of the present invention is to provide a method for manufacturing a light spot converter, wherein a flow chart of an embodiment of the method is shown in fig. 4, which is called as a first embodiment, and the method comprises:
s101: and sequentially epitaxially growing an n-InP epitaxial layer, an active layer, a p-InP epitaxial layer, a p-InGaAs epitaxial layer and a silicon dioxide epitaxial layer on the n-InP substrate to obtain the etching matrix.
Wherein n-InP is n-type indium phosphide, p-InP is p-type indium phosphide, p-InGaAs is p-type indium gallium arsenide, and the Active layer (MQW) can also be represented by Active.
S102: and arranging a negative photoresist layer on the surface of the matrix to be tested, which is far away from the n-InP substrate.
The negative photoresist layer can quickly generate photocuring reaction in an exposure area after being illuminated, so that the physical properties of the material, particularly the solubility, the affinity and the like are obviously changed, and the negative photoresist layer is also called as photoresist.
S103: and exposing the negative photoresist layer by taking the half-period phase shift film as a mask, and obtaining an SSC head shading area with a preset shape on the negative photoresist layer corresponding to the edge of the half-period phase shift film.
The shape of the SSC head shading area is the same as that of the head of the SSC, and the head of the SSC refers to a thinner emergent end of the SSC.
The half-period phase shift film is a phase shift film which can enable the incident wavelength to generate phase shift of about half period, if the angle of the phase shift is 170-190 degrees, including the end point value, of course, the 180-degree phase shift effect is the best, and the line width of the light of the exposure machine can be reduced to about half of the resolution ratio.
The specific principle is that the light intensity at the edge of the pattern of the phase shift film is sharply reduced by the interference between the light passing through the phase shift film and the light in the non-shielded area (refer to fig. 5, fig. 5 is a distribution diagram of the light intensity in each area when the light passes through the edge of the half-period phase shift film), taking an i-line stepper as an example, if the i-line resolution of the stepper is 0.365 microns, the line width of a dark area generated by the half-period phase shift film is about 0.183 microns.
S104: and exposing the negative photoresist layer by using a general mask to obtain an SSC tail shading area with a preset shape on the negative photoresist layer.
The shape of the SSC tail shading area is the same as that of the tail of the SSC, and the tail of the SSC refers to a thicker incident end of the SSC. Of course, there is a transition section with gradually changing thickness between the tail of the thicker SSC and the head of the thinner SSC, and the exposure mask can be selected according to the actual situation.
S105: and removing the negative photoresist layer of the SSC head shading area and the SSC tail shading area, and exposing the silicon dioxide epitaxial layer below to obtain the SSC precursor.
The combination of the SSC head shading region and the SSC tail shading region results in a complete SSC shape, and the exposed silicon dioxide epitaxial layer region in this step is the region where the SSC is designed to be located. In this case, the cross-sectional view (SSC head region) of the SSC precursor is as shown in fig. 7, and fig. 6 is a partially enlarged view of the photoresist which has not been irradiated with light and has been removed by cleaning.
S106: and etching the SSC precursor and filling a protective layer to obtain the light spot converter.
Since the designed SSC shaped groove has been obtained in step S105, the corresponding spot converter can be etched in combination with the prior art.
As a preferred embodiment, the present step specifically includes:
a1: and arranging a mask metal layer on the surface of the SSC precursor far away from the n-InP substrate, and removing the residual negative photoresist layer on the SSC precursor.
Specifically, the method comprises the following steps:
and carrying out vacuum evaporation deposition on a mask metal layer on the surface of the SSC precursor far away from the n-InP substrate.
A mask metal layer can be rapidly and uniformly deposited on the surface of the SSC precursor in a vacuum evaporation manner, so that the production efficiency can be greatly improved, and certainly, the mask metal layer can also be arranged by other means, which is not limited herein.
After removing the remaining negative photoresist layer, leaving only the SSC head shading area and the SSC tail shading area with the mask metal layer, as in the above example, the cross-sectional view of the SSC precursor after the mask metal layer is disposed in this step is shown in fig. 8, and the cross-sectional view of removing the remaining negative photoresist layer is shown in fig. 9.
A2: and etching the SSC precursor without the negative photoresist layer to the n-InP epitaxial layer, and refilling a protective layer to obtain the light spot converter.
Further, step A2 includes:
a201: and etching the silicon dioxide epitaxial layer for the first time by using the residual mask metal layer.
In the above example, a cross-sectional view of the SSC precursor after the primary etching is completed is shown in fig. 10.
A202: and removing the mask metal layer on the SSC precursor subjected to the primary etching.
A203: and taking the residual silicon dioxide epitaxial layer as a mask, carrying out secondary etching on the SSC precursor until the n-InP epitaxial layer is obtained, and refilling the protective layer to obtain the light spot converter.
The cross-sectional view of the SSC precursor after the secondary etching is shown in fig. 11, and the cross-sectional view after the protective layer is filled with indium phosphide (InP) is shown in fig. 12. Of course, in conjunction with the prior art, as can be seen from fig. 12, after the second etching is finished, the silicon dioxide epitaxial layer is useless and can be removed. Of course, it is ensured that no undercutting occurs during the entire etching process.
In the preferred embodiment, two times of etching are designed according to different properties of different epitaxial layers, so that the etching effect can be further ensured, and the production efficiency is improved.
Specifically, the primary etching is reactive ion etching. The reactive ion etching technology is a dry etching technology with strong anisotropy and high selectivity, can avoid transverse etching to the maximum extent, and ensures that the width of the head of the finally obtained SCC is consistent with the width of the corresponding shading area.
Furthermore, the reaction gas for the reactive ion etching is carbon tetrafluoride, which can ensure that the carbon tetrafluoride does not react with other structures in the process of etching the silicon dioxide epitaxial layer, and of course, other reaction gases may be used instead as needed, which is not limited herein.
In addition, the secondary etching is reactive ion etching or wet chemical etching, the wet chemical etching has low cost and is more suitable for mass production, and other methods can be selected.
Preferably, the exposure in the invention is performed by an i-line stepper, which has strong universality and high degree of conformity with the subsequent process steps, so that the process can be further simplified, and of course, other types of exposure machines can be selected according to actual conditions.
The manufacturing method of the light spot converter provided by the invention comprises the steps of sequentially epitaxially growing an n-InP epitaxial layer, an active layer, a p-InP epitaxial layer, a p-InGaAs epitaxial layer and a silicon dioxide epitaxial layer on an n-InP substrate to obtain an etching substrate; arranging a negative photoresist layer on the surface of the matrix to be tested, which is far away from the n-InP substrate; exposing the negative photoresist layer by using the half-period phase shift film as a mask, and obtaining an SSC head shading area in a preset shape on the negative photoresist layer corresponding to the edge of the half-period phase shift film; exposing the negative photoresist layer by using a general mask to obtain an SSC tail shading area with a preset shape on the negative photoresist layer; removing the negative photoresist layer of the SSC head shading area and the SSC tail shading area, and exposing the silicon dioxide epitaxial layer below to obtain an SSC precursor; and etching the SSC precursor and filling a protective layer to obtain the light spot converter. The phase shift film is combined with a traditional photoetching exposure machine, a 'dark area' smaller than the resolution of the exposure machine is formed by utilizing the interference effect generated at the edge of the half-period phase shift film, and the negative photoresist layer is matched to realize SSC waveguide pattern photoetching smaller than the resolution of the exposure machine on the premise of not replacing equipment.
A spot converter is a device obtained by the manufacturing method of the spot converter. According to the manufacturing method of the light spot converter, an n-InP epitaxial layer, an active layer, a p-InP epitaxial layer, a p-InGaAs epitaxial layer and a silicon dioxide epitaxial layer are sequentially epitaxially grown on an n-InP substrate to obtain an etching base body; arranging a negative photoresist layer on the surface of the matrix to be tested, which is far away from the n-InP substrate; exposing the negative photoresist layer by using the half-period phase shift film as a mask, and obtaining an SSC head shading area in a preset shape on the negative photoresist layer corresponding to the edge of the half-period phase shift film; exposing the negative photoresist layer by using a general mask to obtain an SSC tail shading area with a preset shape on the negative photoresist layer; removing the negative photoresist layer of the SSC head shading area and the SSC tail shading area, and exposing the silicon dioxide epitaxial layer below to obtain an SSC precursor; and etching the SSC precursor and filling a protective layer to obtain the light spot converter. The phase shift film is combined with a traditional photoetching exposure machine, a 'dark area' smaller than the resolution of the exposure machine is formed by utilizing the interference effect generated at the edge of the half-period phase shift film, and the negative photoresist layer is matched to realize SSC waveguide pattern photoetching smaller than the resolution of the exposure machine on the premise of not replacing equipment.
The embodiments are described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same or similar parts among the embodiments are referred to each other. The device disclosed by the embodiment corresponds to the method disclosed by the embodiment, so that the description is simple, and the relevant points can be referred to the method part for description.
It is to be noted that, in the present specification, relational terms such as first and second, and the like are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrases "comprising a," "8230," "8230," or "comprising" does not exclude the presence of additional like elements in a process, method, article, or apparatus that comprises the element.
The spot converter and the manufacturing method thereof provided by the invention are described in detail above. The principles and embodiments of the present invention are explained herein using specific examples, which are presented only to assist in understanding the method and its core concepts. It should be noted that, for those skilled in the art, without departing from the principle of the present invention, it is possible to make various improvements and modifications to the present invention, and those improvements and modifications also fall within the scope of the claims of the present invention.
Claims (10)
1. A method of making a speckle converter, comprising:
sequentially epitaxially growing an n-InP epitaxial layer, an active layer, a p-InP epitaxial layer, a p-InGaAs epitaxial layer and a silicon dioxide epitaxial layer on an n-InP substrate to obtain an etching matrix;
arranging a negative photoresist layer on the surface of the matrix to be tested, which is far away from the n-InP substrate;
exposing the negative photoresist layer by using the half-period phase shift film as a mask, and obtaining an SSC head shading area in a preset shape on the negative photoresist layer corresponding to the edge of the half-period phase shift film;
exposing the negative photoresist layer by using a general mask to obtain an SSC tail shading area with a preset shape on the negative photoresist layer;
removing the negative photoresist layer of the SSC head shading area and the SSC tail shading area, and exposing the silicon dioxide epitaxial layer below to obtain an SSC precursor;
and etching the SSC precursor and filling a protective layer to obtain the light spot converter.
2. The method of claim 1, wherein the etching the SSC precursor and filling a protection layer to obtain the spot converter comprises:
arranging a mask metal layer on the surface of the SSC precursor far away from the n-InP substrate, and removing the residual negative photoresist layer on the SSC precursor;
and etching the SSC precursor without the negative photoresist layer to the n-InP epitaxial layer, and refilling a protective layer to obtain the light spot converter.
3. The method for manufacturing the optical spot converter according to claim 2, wherein the etching the SSC precursor from which the negative photoresist layer is removed to the n-InP epitaxial layer and refilling a protective layer to obtain the optical spot converter comprises:
etching the silicon dioxide epitaxial layer for the first time by using the residual mask metal layer;
removing the mask metal layer on the SSC precursor subjected to the primary etching;
and taking the residual silicon dioxide epitaxial layer as a mask, carrying out secondary etching on the SSC precursor until the n-InP epitaxial layer is obtained, and refilling the protective layer to obtain the light spot converter.
4. The method of claim 3, wherein the first etching is reactive ion etching.
5. The method according to claim 4, wherein the reactive gas for the reactive ion etching is carbon tetrafluoride.
6. The method for manufacturing the spot converter according to claim 3, wherein the secondary etching is reactive ion etching or wet chemical etching.
7. The method according to claim 4, wherein when the second etching is reactive ion etching, the corresponding reactive gas is hydrogen bromide.
8. The method of fabricating a spot converter according to claim 2, wherein the disposing a mask metal layer on the surface of the SSC precursor remote from the n-InP substrate comprises:
and carrying out vacuum evaporation deposition on a mask metal layer on the surface of the SSC precursor far away from the n-InP substrate.
9. The method for manufacturing a spot converter according to any one of claims 1 to 9, wherein the exposure is an exposure performed by an i-line stepper.
10. A spot converter obtained by the method of manufacturing a spot converter according to any one of claims 1 to 9.
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2022
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