JP5008076B2 - Optical device manufacturing method - Google Patents

Description

  The present invention relates to an optical device manufacturing method, and more particularly to an optical device electrode manufacturing method having a thin film slab structure represented by a two-dimensional photonic crystal slab optical device.

  When the difference in refractive index between the core layer having a high refractive index and the cladding layer having a low refractive index is made large, a strong light confinement effect occurs, and light is confined in the core layer. When a structure in which the core layer is a thin plate (slab structure) is used, light is confined in the core layer and propagates in the plane (FIG. 20). Furthermore, various functions can be added by introducing an appropriate refractive index profile into the slab structure.

  In particular, a two-dimensional photonic crystal (2-DPC) slab structure in which a periodic refractive index distribution is introduced into the slab structure has attracted attention as an effective means for realizing an optical integrated circuit. The 2DPC slab structure can realize functional elements such as an optical resonator and an optical waveguide by introducing various structures for disturbing the periodic refractive index distribution (FIG. 21). Since various methods can be considered as a structure that disturbs the periodic refractive index distribution, there is an advantage that the degree of freedom in design is very high.

As the cladding layer of the 2DPC slab structure, air, SiO ₂ or the like, which is a low refractive index insulating material, is used. Further, the core layer has a thin shape up to about a fraction of the wavelength of light due to the single mode condition of the propagation mode.

  Since the 2DPC slab structure has advantages such as a high light confinement effect and a high degree of design freedom, it is expected that the optical device will be greatly reduced in size, reduced in power consumption, improved in function, and highly integrated.

  In recent years, in the realization of optical / electronic integrated circuits, size mismatch between optical devices and Si electronic devices has become a problem. 2DPC slab optical devices can be significantly reduced in size and can be minimized in size mismatch with Si electronic devices. Therefore, 2DPC slab optical devices are attracting attention as key devices for realizing optical and electronic integrated circuits. Yes.

  As dynamic control of optical devices, control by applying an electric field is widely used. As a practical example of a conventional electric field control type optical device, a method of arranging electrodes on both sides of a semiconductor substrate and a method of arranging two electrodes on the upper surface of a semiconductor substrate are generally used (Non-Patent Document 1).

  An example in which the conventional method is applied to a 2DPC slab structure is shown in FIGS. Here, the case where an electric field is applied perpendicularly to the slab structure will be mainly described. For example, in an electric field control type optical device using a compound semiconductor multiple quantum well, it is usually required to apply an electric field in the vertical direction (slab vertical direction) of the quantum well.

  In the structure of FIG. 22, since the electrodes are arranged on the bottom surface of the substrate, the distance between the electrodes is increased. Therefore, a strong electric field strength is realized by using a substrate having a high impurity concentration (high conductivity). The electric field distribution applied to the 2DPC slab structure is determined by the upper electrode structure. In this method, since a highly conductive substrate is used, the entire substrate is maintained at substantially the same potential. Therefore, there is a drawback that the electric field distribution applied to the 2DPC slab structure cannot be controlled by the electrode structure on the bottom surface of the substrate. Considering the realization of a high-density optical integrated circuit, it is desired to efficiently control the applied electric field distribution by the electrode structures existing above and below the 2DPC slab structure.

  Here, consider hybrid integration of optical devices on different substrates. By disposing the lower electrode on a different substrate, the device can be hybrid-integrated on a different substrate. For example, hybrid integration on a Si substrate of a 2DPC slab optical device manufactured using a compound semiconductor is possible. However, since this device has a substrate, the thickness in the height direction is large (usually about several tens to several hundreds μm). Therefore, although the size mismatch between the 2DPC slab structure and the Si electronic device is small, there is a serious problem that the size mismatch between the entire optical device and the Si electronic device shown in FIG. 22 becomes very large.

  In the structure of FIG. 23, an electric field is applied by disposing two electrodes on the upper surface of the substrate. In general, an electric field is applied in the vertical direction by devising that an optical device is arranged directly under one of the electrodes. The electric field distribution under the electrodes can be controlled by the size, shape, and arrangement of the two electrodes.

Here, consider a case where a small electrode structure is introduced in order to realize high integration of an optical integrated circuit. This method is originally a structure suitable for applying an electric field in the lateral direction, and it is difficult to efficiently apply an electric field in the vertical direction when a small electrode structure is used.
Furthermore, this electrode structure has a more complicated electric field distribution as compared with the case of a flat plate electrode, and therefore, the electric field distribution is highly dependent on the electrode structure. In particular, when the electrode structure is small, the allowable manufacturing error is small, and thus yield is a problem.
In addition, when one electrode is controlled by each electrode, no optical device is disposed under one electrode, which consumes an extra area, which is disadvantageous from the viewpoint of high integration. It can be said that it is a structure.

The 2DPC slab structure has attracted attention as an effective means for realizing an optical integrated circuit. However, as described above, the conventional electrode manufacturing method is not suitable for realizing an optical integrated circuit using a 2DPC slab structure. In particular, considering the realization of optical / electronic integrated circuits (for example, compound semiconductor 2DPC slab optical integrated circuit and Si electronic integrated circuit / optical integrated circuit hybrid integration) that are currently attracting attention, There are difficulties.
Shiro Saito, Ultrafast Optical Device, Kyoritsu Publishing Co., Ltd., p. 115, p. 125.

  An object of the present invention is to provide a highly reliable electrode manufacturing method suitable for a thin film slab structure typified by a 2DPC slab structure.

The above problem is solved by the following means.
(1) preparing a first substrate having a portion made of a material constituting the core layer of the optical device and a second substrate for integrating the optical device;
Forming a first electrode wiring on a part of the second substrate;
Applying SOD to the upper surface of at least one of the first and second substrates;
Bonding the side on which the portion made of the material constituting the core layer of the first substrate is formed and the side on which the first electrode wiring of the second substrate is formed;
Heating the bonded substrates;
Removing the first substrate leaving a portion made of a material constituting the core layer;
A step of performing desired processing on a portion made of a material constituting the core layer to form a core layer having a two-dimensional photonic crystal slab structure ;
Forming a low refractive index insulating film on the core layer;
Forming a second electrode wiring on a part of the low refractive index insulating film on the core layer.
(2) preparing a first substrate having a portion made of a material constituting the core layer of the optical device and a second substrate for integrating the optical device;
Forming a low refractive index insulating film on a portion made of a material constituting the core layer of the optical device of the first substrate;
Forming a first electrode wiring on a part of the low refractive index insulating film;
Applying SOD to the upper surface of at least one of the first and second substrates;
Bonding the side of the first substrate on which the first electrode wiring is formed and the second substrate;
Heating the bonded substrates;
Removing the first substrate leaving a portion made of a material constituting the core layer;
A step of performing desired processing on a portion made of a material constituting the core layer to form a core layer having a two-dimensional photonic crystal slab structure ;
Forming a low refractive index insulating film on the core layer;
Forming a second electrode wiring on a part of the low refractive index insulating film on the core layer.
(3) The method of manufacturing an optical device according to (1) or (2) , wherein the step of forming a low refractive index insulating film on the core layer includes a step of applying SOD.
(4) The method for manufacturing an optical device according to any one of (1) to (3) , wherein an electronic circuit is formed on the second substrate.
(5) The method of manufacturing an optical device according to any one of (1) to (4) , wherein an optical circuit is formed on the second substrate.
(6) The method for manufacturing an optical device according to any one of (1) to (5) , wherein the second substrate is a Si substrate or an SOI substrate.
(7) The optical device according to any one of (1) to (6) , wherein the portion made of a material constituting the core layer of the optical device included in the first substrate is made of a compound semiconductor. Production method.
(8) The method according to any one of (1) to (7) , further including a step of introducing a material different from the low refractive index insulating film into a part of the low refractive index insulating film covering the core layer. Optical device manufacturing method.
(9) The method for manufacturing an optical device according to any one of (1) to (8) , including a step of laminating one or more optical elements on the optical device.

  According to the present invention, it is possible to introduce an effective electrode structure suitable for high-density integration above and below a thin film slab structure typified by a 2DPC slab structure without using a complicated process. Further, according to the present invention, it is possible to hybrid-integrate optical devices on different substrates simultaneously with the manufacture of the electrodes.

In the invention according to claim 3 , the low refractive index insulating film is formed by a coating method, and it becomes possible to manufacture the device in a short time with a very simple apparatus. Further, the step of applying SOD is also performed before wafer bonding, and there is an advantage that the apparatus can be shared in different steps.

In the invention according to claim 4 , since the electronic circuit is formed on the second substrate, it is possible to further integrate the optical / electronic device simultaneously with the manufacture of the electrode.

In the invention according to claim 5 , since the optical circuit is formed on the second substrate, the optical device can be further integrated simultaneously with the manufacture of the electrode.

Hereinafter, the present invention will be described in detail based on examples.
First, a compound semiconductor substrate (for example, an InP substrate) for manufacturing an optical device is prepared. Here, a quantum well structure (for example, an InGaAs / InAlAs multiple quantum well) that can be expected to have a large electroabsorption effect is introduced into the core layer. An etch stop layer (for example, an InGaAsP layer) for removing the substrate is introduced into the compound semiconductor substrate. In addition, a Si substrate for integrating optical devices is prepared (FIG. 1).

Next, a first electrode wiring is formed on the Si substrate (FIG. 2).
Then, using a solution containing the raw material of the low refractive index insulating material, wafer bonding of the Si substrate on which the electrode wiring is formed and the compound semiconductor substrate is performed (FIG. 3).
In the present specification, a solution containing a raw material of a low refractive index insulating material is abbreviated as SOD (Spin On Dielectric).

  The SOD is cured by heating and forms a good low refractive index insulating film. When SOD is applied to at least one of the compound semiconductor substrate and the Si substrate, and then wafer bonding and heating are performed, the SOD acts like an adhesive and strongly bonds the two substrates. Here, since SOD is used as an adhesive, bonding of two different types of substrates can be easily realized.

  The present invention is greatly characterized in that SOD is used for wafer bonding of a substrate for manufacturing an optical device and a substrate for integrating the optical device. In wafer bonding, unevenness of the substrate surface is generally a problem. In the present invention, since the first electrode wiring is formed on the substrate surface and then wafer bonding is performed, it is necessary to take measures against unevenness based on the electrode structure. Since SOD has a low viscosity and has a function of filling the unevenness of the surface, there is an advantage that even when unevenness exists on the surface of the substrate, wafer bonding can be performed without concern. That is, highly reliable production is possible.

  The SOD is required to have a role as a cladding layer of the optical device in addition to the role as an adhesive in the wafer bonding, and therefore has a low refractive index with respect to the operating wavelength of the optical device. Examples of the SOD include SOG (Spin On Glass) having a very low refractive index of about 1.4 in the near infrared region, and an organic polymer having a low refractive index of 2 or less.

  SOG and organic polymers are widely used as an interlayer insulating film (insulating film for wiring) of LSI (Large Scale Integration), and similarly function well as an insulating film between wirings in an optical device.

  Here, the wafer bonding method itself using SOD (for example, SOG, organic polymer) is an existing method and has already been reported. The present invention is not an invention related to the wafer bonding method itself, but by using a wafer bonding method using SOD, “an unprecedented highly reliable electrode manufacturing method suitable for a thin film slab structure represented by a 2DPC slab structure” Is provided.

Next, the compound semiconductor substrate is removed by polishing, etching or the like while leaving the compound semiconductor core layer (FIG. 4).
Then, a 2DPC structure is formed on the exposed compound semiconductor core layer using etching or the like (FIG. 5).
Next, a low refractive index insulating material is deposited on the core layer on which the 2DPC structure is formed to form a cladding layer (FIG. 6).

  A second electrode wiring is formed on the cladding layer (FIG. 7). The electrode wiring is connected to, for example, an LSI wiring on the Si substrate. Since the thickness of the optical device formed on the Si substrate is several μm or less and the size mismatch with the LSI is small, the wiring can be easily connected.

By using the above steps, the fabrication of an electric field control type 2DPC slab optical device made of a compound semiconductor, the hybrid integration on the Si substrate, and the connection between the electric field control type 2DPC slab optical device and the Si-LSI can be easily realized. .
Moreover, since the structure of the electrodes existing above and below the 2DPC slab can be easily changed, the electric field distribution can be controlled efficiently.

  In the process of FIG. 2, the first electrode wiring is formed on the Si substrate. Here, after forming a clad layer by depositing a low refractive index insulating material on the compound semiconductor core layer, the first electrode wiring may be formed on the clad layer. After the wafer bonding, a structure substantially similar to the structure shown on the right side of FIG. 3 is realized.

It is also possible to perform wiring by introducing a via plug for the first electrode wiring.
In the step of FIG. 5, a via plug through hole is formed in the core layer (FIG. 8). Next, a low refractive index insulating material is deposited on the substrate to form a cladding layer (FIG. 9). A part of the cladding layer is selectively removed, and a via plug for the first electrode wiring is introduced. Further, the second electrode wiring is formed (FIG. 10). The first and second electrode wirings are connected to, for example, LSI wirings on the Si substrate.

  Furthermore, by repeating the above-described steps, a multilayer structure of a 2DPC slab optical device having an electrode structure can be easily realized (FIG. 11). The electrode manufacturing method of the present invention facilitates multilayering of optical devices in addition to hybrid integration.

  In the present invention, the electrode manufacturing method itself is a conventional method in which an electrode is introduced into the substrate surface at each step, and is a manufacturing method with a high yield. Further, as the wafer bonding method, a highly reliable manufacturing method using SOD is adopted. Therefore, the yield is not a big problem even when the number of processes increases with the increase in the number of layers.

  After the steps of FIGS. 7 and 10, the low refractive index insulating clad layer can be removed by wet etching or the like. However, the air bridge structure (air above and below the core layer or the electrode wiring) is generally not suitable for practical use because of its low mechanical strength. Therefore, the air bridge structure can be easily manufactured by using the present invention, but in general, the use is limited to special applications.

  In the electrode manufacturing method of the present invention, the electrode structure and the electrode introduction position can be easily changed by slightly changing the process (for example, changing the photolithography pattern). FIG. 12 shows an example of an electrode wiring structure for a photonic crystal optical waveguide and a photonic crystal optical resonator. The present invention is suitable for integration of optical devices having various electrode structures, and can realize a multifunctional optical integrated circuit.

In the above embodiments, the substrate for manufacturing the optical device is a compound semiconductor substrate. However, in the present invention, any substrate (for example, Si substrate, sapphire substrate) used for manufacturing the optical device can be used. .
In the above embodiment, the core layer is a compound semiconductor having a quantum well structure. However, in the present invention, any material used as an optical device (for example, GaAs having InAs quantum dots, Si doped with impurities) Can be used. However, as an electric field control type optical device, a material having a large electro-optic effect and electric field absorption effect is generally desired.
Here, a compound semiconductor (for example, InP, GaAs) is a typical material for realizing an optical device.

Furthermore, in the above embodiment, the substrate for integrating the optical device is the Si substrate, but any substrate (for example, SOI (Silicon On Insulator) substrate, compound semiconductor substrate) on which the optical device is to be integrated can be used. It is. Further, an arbitrary device (for example, an LSI) may be formed on a substrate for integrating optical devices. In that case, the optical device can be integrated so as to be adjacent to the device, or the optical device can be integrated on the device.
Here, the Si substrate and the SOI substrate are representative substrates for realizing an electronic circuit and an optical circuit.

When an electronic circuit is formed on a substrate for integrating optical devices, it is possible to further integrate optical / electronic devices simultaneously with the manufacture of electrodes. In particular, the integration of optical devices on an LSI substrate is very important in practice.
Since the integration of optical integrated circuits and electronic integrated circuits on the same substrate can realize high functionality and high integration of devices, it is currently attracting attention as a key technology for building complex systems such as optical routers. Collecting.

  When an optical circuit is formed on a substrate on which optical devices are integrated, the optical devices can be further integrated simultaneously with the manufacture of the electrodes. In particular, the integration of optical devices made of different materials is important in practice. For example, when a substrate for optical device fabrication is a compound semiconductor substrate and a substrate for integrating optical devices is a Si substrate, an electric field control type optical device composed of a compound semiconductor and a passive optical device composed of Si (or active) Integration of optical devices can be realized.

Here, the integration of the optical device may be performed adjacent to the electronic circuit and the optical circuit, or may be performed on the electronic circuit and the optical circuit.
Various functional elements (for example, optical elements) may be stacked on the electric field control type 2DPC slab optical device manufactured by using the present invention.
The present invention is a manufacturing method suitable for stacking optical / electronic devices. Stacking makes it possible not only to realize dramatic miniaturization, but also to realize an optical device having a complicated function that has not been conventionally available.

In the above example, the substrate was peeled by introducing an etch stop layer into the compound semiconductor substrate and performing polishing, etching, and the like (FIG. 4). This method is a general method of substrate peeling.
In the present invention, it is of course possible to use substrate peeling methods other than those shown in the above embodiments. In that case, it is not always necessary to prepare a substrate into which an etch stop layer is introduced. Examples of other substrate peeling methods include a CMP (Chemical Mechanical Polishing) method, a peeling method using hydrogen ion implantation, and a peeling method using a sacrificial layer.

  As a material for electrodes and wiring, any conductive material such as metal and ITO (Indium Tin Oxide) can be used.

  In the above embodiment, the SOD is applied to at least one of the compound semiconductor substrate and the Si substrate, and then the wafer bonding and heating are performed. Here, in the present invention, the wafer bonding may be performed immediately after the SOD is applied to the substrate, or the wafer bonding may be performed after the heat treatment is once performed after the SOD is applied to the substrate. Both methods are well known as prior art.

  Even when heat treatment is performed before wafer bonding, heat treatment after wafer bonding is necessary. By performing heat treatment after wafer bonding, strong bonding is realized. Here, the heat treatment after wafer bonding may be performed any number of times. Further, the heat treatment is allowed to be performed between arbitrary steps. For example, the heat treatment may be performed in a state where one substrate as illustrated in FIG. 4 is peeled off.

  As a method for applying SOD, a spin coating method is the most common and effective. However, in the present invention, it is not always necessary to use the spin coating method for coating the SOD. For example, a method is also conceivable in which wafer bonding is performed by simply applying SOD to the substrate surface and then heating the substrate while applying pressure. By applying pressure, the SOD is spread over the entire surface of the substrate.

  Prior to wafer bonding using SOD, it is effective to coat the surface of the substrate with a low refractive index insulating material by, for example, CVD (Chemical Vapor Deposition), sputtering, or coating. For example, coating a substrate with an electrode structure with a low refractive index insulating material before wafer bonding leads to reduction of unevenness on the substrate surface.

  For example, if the unevenness can be completely flattened by a film formed by CVD, the substrates can be bonded to each other without using SOD. However, it is usually difficult to planarize the surface to the high level required by direct wafer bonding methods that do not use SOD. Therefore, in the present invention, even when each substrate before wafer bonding is coated with a low refractive index insulating material, it is desirable to finally apply SOD to at least one substrate surface and perform wafer bonding. Think. This is very important when considering the yield in practical use.

Here, there is no problem in applying SOD to the surface of the low refractive index insulating film produced by a method other than the coating method (for example, CVD method, sputtering method). For example, the CVD method is generally used for forming an SOD protective film in a conventional LSI because it can achieve a better film quality than a coating method. Structures such as “CVD SiO ₂ / SOD / CVD SiO ₂ ” are used in actual devices. In addition, there are advantages such as improving the film quality of the cladding layer and increasing the thickness of the cladding layer.

  When the structure of the first electrode wiring is changed, there is a concern that the wafer bonding condition changes. However, if it is previously coated with a low refractive index insulating material, the unevenness of the electrode structure is flattened to some extent, so that it is possible to perform wafer bonding under the same conditions for each electrode wiring structure.

  In order to form a clad layer on a substrate having a 2DPC structure (FIG. 6), for example, a low refractive index insulating material may be coated using a CVD method, a sputtering method, or a coating method. Here, since the 2DPC structure is a fine structure having a period of about several hundreds of nanometers, it is generally suitable to use a CVD method or a coating method. In particular, when a coating method is used, a film can be easily formed in a short time. When SOD is used for wafer bonding and further for coating with a 2DPC structure, a device can be manufactured in a short time with a very simple apparatus.

In the present invention, it is allowed to use any electrode and wiring manufacturing method in introducing the electrode wiring. In particular, from the viewpoint of high integration, it is desirable to use LSI wiring technology. In the present invention, since SOD (for example, SOG, organic polymer) widely used as an interlayer insulating film of LSI is used, it is very suitable for introduction of LSI wiring technology. This is an important advantage in practice. For example, the first electrode wiring via plug of FIG. 10 can be easily realized by using a plug forming technique in the LSI wiring technique.
Of course, the electrode wiring may be introduced using other methods (for example, wire bonding, lift-off method).

  FIG. 13 shows an example of an electrode wiring structure in which the distance between the electrode and the core layer is very short in a specific region of the 2DPC slab. In this case, since the distance between the electrode and the core layer is short, an electric field can be applied efficiently. However, since the light absorption by the electrode is very large, the distance between the electrode and the core layer must be such that the light absorption does not cause a problem in operation.

Here, consider a case where a large number of optical devices are integrated with high density. At this time, depending on the design, the electrical wiring may cross over (or under) the optical waveguide. As shown in FIG. 13, if the electrode wiring is introduced so that the distance between the electrode and the core layer is short and the distance between the wiring and the core layer is sufficiently long, light absorption by the wiring can be ignored. It will be very easy.
Such an electrode wiring structure having a step can be easily realized by using an LSI wiring technology (for example, plug formation technology, Cu single damascene method, Cu dual damascene method). The advantage of using a material suitable for LSI wiring technology as a cladding layer is very large in practical use.

  In the above embodiment, the optical device introduced into the core layer has a 2DPC slab structure, but other thin film slab structures may be used. For example, a 1DPC slab structure, a quasicrystal structure having no translational symmetry, a CGSEL (Circular Grating Coupled Surface-Emitting Laser) structure, a thin-line waveguide structure, a ridge waveguide structure, a ring resonator structure, and a microdisk structure may be used. Further, a bulk thin film slab structure having no special structure may be used. The present invention is effective for any thin film slab structure having a low refractive index insulating cladding layer. As a structure to be introduced into the thin film slab, a 2DPC slab structure having a high light confinement effect and a high degree of design freedom is desirable, but the 2DPC slab structure is not necessarily required.

  Finally, it is possible to introduce a material (for example, optical material, electronic material, doping) different from the cladding layer into a part of the low refractive index insulating cladding layer (FIG. 14). Here, when a conductive material (for example, a conductive organic polymer) is introduced (FIG. 15), a current controlled optical device can be realized instead of an electric field controlled optical device. However, since it is generally not easy to add a material different from the cladding layer to a part of the low refractive index insulating cladding layer, the application of this method will be limited to special applications.

  The present invention can be applied not only to the electric field control type optical device but also to the manufacture of any optical device that requires an electrode structure.

  The present invention provides an unprecedented control method and highly reliable electrode manufacturing method for a thin film slab structure typified by a two-dimensional photonic crystal slab optical device.

Finally, an example is shown in which a 2DPC slab structure is actually manufactured using a wafer bonding method by SOD.
FIG. 16 is a schematic diagram of a 2DPC slab structure actually manufactured. A compound semiconductor GaAs was used as the portion to be the core layer of the optical device, and a Si substrate was used as the second substrate. An organic polymer (CYCLOTENE resin) was used as the SOD.

FIG. 17 is an SEM image of a 2DPC slab structure actually produced. FIG. 18 is an SEM image of a 2DPC slab optical resonator in which three circular holes are filled. FIG. 19 is an SEM image of a 2DPC slab optical waveguide in which one row of circular holes is filled.
By adding a step of adding an electrode structure to the above structure, the 2DPC slab optical device shown in FIG. 7 is realized.

  Here, in the present invention, since SOD is used for wafer bonding, even if the material of the portion to be the core layer of the optical device and the material of the second substrate for integrating the optical device are different, the wafer can be easily obtained. Joining is realized.

An example of the substrate for optical devices and optical device integration. The example of preparation of the 1st electrode wiring on Si substrate. The conceptual diagram of the wafer bonding using SOD (Spin On Dielectric). The schematic diagram of the peeling process of a compound semiconductor substrate. The schematic diagram of an etching process (introduction of the two-dimensional photonic crystal structure to a core layer). An example of introducing a low refractive index insulating clad layer on a substrate. A production example of the second electrode wiring on the low refractive index insulating clad layer. The schematic diagram of an etching process (2D photonic crystal structure to core layer, introduction of through hole for via plug). An example of introducing a low refractive index insulating clad layer on a substrate. An example of manufacturing a second electrode wiring and a first electrode wiring via plug on the low refractive index insulating clad layer. An example of a multilayer optical device. An example of the electrode wiring structure with respect to a photonic crystal optical waveguide and a photonic crystal optical resonator. An example of an electrode wiring structure. An example of introducing different materials into the low refractive index insulating cladding layer. An example of a current-controlled optical device. The schematic diagram of the produced 2DPC slab structure. The SEM image of the produced 2DPC slab structure. The SEM image of the produced 2DPC slab optical resonator. The SEM image of the produced 2DPC slab optical waveguide. Explanatory drawing of the structure (slab structure) which made the core layer thin plate shape. An example of the two-dimensional photonic crystal slab structure by the conventional method. An example of the electric field control type optical device by a conventional method. An example of the electric field control type optical device by a conventional method.

Claims (9)

Providing a first substrate having a portion made of a material constituting the core layer of the optical device and a second substrate for integrating the optical device;
Forming a first electrode wiring on a part of the second substrate;
Applying SOD to the upper surface of at least one of the first and second substrates;
Bonding the side on which the portion made of the material constituting the core layer of the first substrate is formed and the side on which the first electrode wiring of the second substrate is formed;
Heating the bonded substrates;
Removing the first substrate leaving a portion made of a material constituting the core layer;
A step of performing desired processing on a portion made of a material constituting the core layer to form a core layer having a two-dimensional photonic crystal slab structure ;
Forming a low refractive index insulating film on the core layer;
Forming a second electrode wiring on a part of the low refractive index insulating film on the core layer. Providing a first substrate having a portion made of a material constituting the core layer of the optical device and a second substrate for integrating the optical device;
Forming a low refractive index insulating film on a portion made of a material constituting the core layer of the optical device of the first substrate;
Forming a first electrode wiring on a part of the low refractive index insulating film;
Applying SOD to the upper surface of at least one of the first and second substrates;
Bonding the side of the first substrate on which the first electrode wiring is formed and the second substrate;
Heating the bonded substrates;
Removing the first substrate leaving a portion made of a material constituting the core layer;
A step of performing desired processing on a portion made of a material constituting the core layer to form a core layer having a two-dimensional photonic crystal slab structure ;
Forming a low refractive index insulating film on the core layer;
Forming a second electrode wiring on a part of the low refractive index insulating film on the core layer. In the step of forming the low refractive index insulating film on the core layer, the manufacturing method of the optical device according to claim 1 or claim 2, characterized in that includes the step of applying the SOD. Above the second substrate, method of manufacturing an optical device according to any one of claims 1 to 3, characterized in that the electronic circuit is formed. Above the second substrate, method of manufacturing an optical device according to any one of claims 1 to 4, characterized in that the optical circuit is formed. Said second substrate, method of manufacturing an optical device according to any one of claims 1 to 5, characterized in that a Si substrate or SOI substrate. The site of a material constituting the core layer of the optical device having the first substrate, method of manufacturing an optical device according to any one of claims 1 to 6, characterized in that a compound semiconductor. Some of the low refractive index insulating film covering the core layer, the manufacturing method of the optical device according to any one of claims 1 to 7, characterized in that it comprises the step of introducing a different material than the low-refractive-index dielectric film . The method of manufacturing an optical device as claimed in any one of claims 1 to 8, characterized in that it comprises a step of laminating the optical element 1 or more on the optical device.