CN102478685A - Silicon on insulator (SOI) photonic crystal device - Google Patents
Silicon on insulator (SOI) photonic crystal device Download PDFInfo
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- CN102478685A CN102478685A CN2010105594760A CN201010559476A CN102478685A CN 102478685 A CN102478685 A CN 102478685A CN 2010105594760 A CN2010105594760 A CN 2010105594760A CN 201010559476 A CN201010559476 A CN 201010559476A CN 102478685 A CN102478685 A CN 102478685A
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Abstract
The invention provides a method for manufacturing a two-dimensional photonic crystal device by suing a silicon on insulator (SOI) as a material. The characteristics of the SOI material are better used by the method; and through selection of proper top layer silicon, the buried layer thickness, the aperture and the period, the photonic crystal device is successfully manufactured through optical lithography and inductively coupled plasma-deep reactive ion etching (ICP-DRIE) etching.
Description
Technical field:
The invention belongs to field of new, relating to a kind of is the 2 D photon crystal device that base material is made with SOI.
Background technology:
Photonic crystal is the forbidden photon band material, sees from material structure, and photonic crystal is one type and on the optics yardstick, has periodically manual work design of dielectric structure and the crystal of making.Similar with semiconductor lattice to the modulation phase of electron wave function; Photonic bandgap material can be modulated the electromagnetic wave with respective wavelength: when electromagnetic wave is propagated in photonic bandgap material; Owing to existing Bragg diffraction to be modulated, electromagnetic wave energy forms band structure.Between being with and being with band gap appears, i.e. photon band gap.Institute's prodigiosin is in the photon in the photon band gap, can not get into this crystal.Photonic crystal and semiconductor have many similarities at basic model with studying on the thinking, so people can reach the purpose that the control photon moves through design and manufacturing photonic crystal and device thereof.The appearance of photonic crystal (claiming the forbidden photon band material again) is handled people and the dream of controlling photon becomes possibility.
The crack of showing off of microwave region often is called electro-magnetic bandgap (ElectromagneticBand-Gap abbreviates EBG as), and the microwave regime that is introduced as of photonic crystal provides new research direction.Photonic crystal relies on self structure just can realize bandreject filtering fully, and relatively simple for structure, all has broad application prospects at aspects such as microwave circuit, microwave antennas.Photonic crystal is meant the artificial periodic dielectric structure of (PhotonicBand-Gap the abbreviates PBG as) characteristic that has photon band gap, is also referred to as pbg structure sometimes.So-called photon band gap is meant that the ripple of a certain frequency range can not propagate in this periodic structure, there be " forbidden band " in promptly this structure itself.This notion proposes at optical field at first, and its research range has expanded to microwave and sound wave wave band now.Because the cycle size wavelength comparable corresponding of this structure with the centre frequency in " forbidden band ", thus this structure in microwave region than realizing more easily at light-wave band.
The preparation of photonic crystal has quite high difficulty, because the lattice yardstick of photonic crystal has the identical order of magnitude with light wavelength, as: for optical communicating waveband (wavelength 1.55 μ m), the lattice that requires photonic crystal is about 0.5 μ m.In the last few years, people constantly explore and the process of test in, many preparation methods have appearred, as: dielectric rod accumulation, precision optical machinery boring, colloidal solid self-organizing growth, colloidal solution self-organization are all the year round with semiconductor technology etc.Use these methods,, can prepare the photonic crystal that has various band gap through the proportioning of specific inductive capacity and the microcycle property structure of photonic crystal between the dielectric material in the artificially control photonic crystal.Yet these methods can not be applicable to that all can make the material of photonic crystal.
SOI (Silicon-On-Insulator; Silicon on the insulator substrates) be a kind of comparatively ideal 2 D photon crystal material; Preparing the photonic crystal periodic structure in the horizontal direction can retrain and control the light beam of transmission, forms the propagation that total reflection retrains light through big refractive index difference in vertical direction.Turning through to photon crystal wave-guide is optimized design, can be in very wide scope (200nm) acquisition the loss of turning round of 0.43dB, 0.27dB is only arranged.How using suitable method to produce the SOI photon crystal device, is the difficult problem that research at present faces.
Summary of the invention:
In order to solve the difficult problem in the present photonic crystal making; The invention provides a kind of is the method for material 2 D photon crystal device with SOI; This method has been utilized the characteristic of SOI material itself preferably; Through selecting suitable top layer silicon and buried regions thickness, aperture and cycle, adopt optical lithography and ICP-DRIE etching successfully to produce photon crystal device.
The method that the present invention makes photon crystal device is:
A) the initial SOI material of making 2 D photon crystal;
B) resist coating on the SOI top layer silicon, baking is handled before carrying out;
C) on photoresist, placing mask plate;
D) through making public the pattern transfer on the mask plate to photoresist;
E) carry out development operation;
F) back baking once more is cured post bake like figure to photoresist;
G) adopt reactive ion beam etching (RIBE) to remove the top layer silicon part of being made public;
H) etching oxygen buried layer;
I) utilize dry method or wet method to remove photoresist layer, obtain the 2 D photon crystal device.
Description of drawings:
Accompanying drawing is the synoptic diagram of each step of making according to the invention SOI photonic crystal, (a), (b), (c), (d), (e), (f), (g), (h), (i) is each step in the manufacturing process.
Embodiment:
Come the present invention is done further explanation below in conjunction with accompanying drawing.
Shown in accompanying drawing, the method for making of SOI photon crystal device according to the invention is following:
A) the initial SOI material of making 2 D photon crystal, wherein the top layer silicon thickness of SOI is 230nm, oxygen buried layer is 400nm, single-sided polishing;
B) resist coating on the SOI top layer silicon obtains the thick photoresist layer of 1.1 μ m, and baking is handled before carrying out, and pre-bake temperature is 110 ℃;
C) on photoresist, to place mask plate, the figure on the mask plate is an array of circular apertures, and circle hole radius is 140nm, and the cycle is 380nm;
D) aim at the back through the crystal orientation and adopt the vacuum exposure, with the pattern transfer on the mask plate to photoresist;
E) carry out development operation;
F) back baking once more is cured post bake like figure to photoresist;
G) adopt reactive ion beam etching (RIBE) to remove the top layer silicon part of being made public, etching time is no more than 1 minute;
H) etching oxygen buried layer;
I) utilize dry method or wet method to remove photoresist layer, obtain the 2 D photon crystal device.
More than be to explanation of the present invention and non-limiting, based on other embodiments of inventive concept, all within protection scope of the present invention.
Claims (7)
1. a SOI photon crystal device is to be the 2 D photon crystal device that material goes out with SOI, it is characterized in that the method for making of said photon crystal device is:
A) the initial SOI material of making 2 D photon crystal;
B) resist coating on the SOI top layer silicon, baking is handled before carrying out;
C) on photoresist, placing mask plate;
D) through making public the pattern transfer on the mask plate to photoresist;
E) carry out development operation;
F) back baking once more is cured post bake like figure to photoresist;
G) adopt reactive ion beam etching (RIBE) to remove the top layer silicon part of being made public;
H) etching oxygen buried layer;
I) utilize dry method or wet method to remove photoresist layer, obtain the 2 D photon crystal device.
2. a kind of SOI photon crystal device according to claim 1 is characterized in that the top layer silicon thickness of said SOI material is 230nm, and oxygen buried layer thickness is 400nm.
3. a kind of SOI photon crystal device according to claim 1 is characterized in that, the coating thickness of said photoresist is 1.1 μ m.
4. a kind of SOI photon crystal device according to claim 1 is characterized in that, said preceding baking treatment temperature is 110 ℃.
5. a kind of SOI photon crystal device according to claim 1 is characterized in that the pattern of said mask plate is an array of circular apertures.
6. a kind of SOI photon crystal device according to claim 5 is characterized in that the circle hole radius of said array of circular apertures is 140nm, and the cycle is 380nm.
7. a kind of SOI photon crystal device according to claim 1 is characterized in that the etching time of said top layer silicon is no more than 1 minute.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN2010105594760A CN102478685A (en) | 2010-11-24 | 2010-11-24 | Silicon on insulator (SOI) photonic crystal device |
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| Application Number | Priority Date | Filing Date | Title |
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| CN2010105594760A CN102478685A (en) | 2010-11-24 | 2010-11-24 | Silicon on insulator (SOI) photonic crystal device |
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| CN102478685A true CN102478685A (en) | 2012-05-30 |
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| CN2010105594760A Pending CN102478685A (en) | 2010-11-24 | 2010-11-24 | Silicon on insulator (SOI) photonic crystal device |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103346409A (en) * | 2013-06-06 | 2013-10-09 | 电子科技大学 | Medium-infrared multi-band and broadband periodic wave-absorbing structure based on medium modulation |
| CN106226865A (en) * | 2016-09-06 | 2016-12-14 | 江苏大学 | Nanometer straight hole cyclic array preparation method in a kind of photonic crystal |
| CN106772703A (en) * | 2016-12-16 | 2017-05-31 | 北京邮电大学 | 1 × 8 high-performance photonic crystal parallel multiplied sensor array structure of the one kind based on silicon on insulator (SOI) |
| CN107703056A (en) * | 2017-09-25 | 2018-02-16 | 电子科技大学 | SOI micro-loop photon biology sensor preparation methods based on 1-D photon crystal |
| CN107833939A (en) * | 2017-11-22 | 2018-03-23 | 绍兴文理学院 | 2 D photon crystal selective radiator and preparation method |
-
2010
- 2010-11-24 CN CN2010105594760A patent/CN102478685A/en active Pending
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103346409A (en) * | 2013-06-06 | 2013-10-09 | 电子科技大学 | Medium-infrared multi-band and broadband periodic wave-absorbing structure based on medium modulation |
| CN103346409B (en) * | 2013-06-06 | 2016-06-22 | 电子科技大学 | Mid-infrared multiband and broadband periodically absorbent structure based on medium modulation |
| CN106226865A (en) * | 2016-09-06 | 2016-12-14 | 江苏大学 | Nanometer straight hole cyclic array preparation method in a kind of photonic crystal |
| CN106226865B (en) * | 2016-09-06 | 2019-02-05 | 江苏大学 | Nanometer straight hole cyclic array preparation method in a kind of photonic crystal |
| CN106772703A (en) * | 2016-12-16 | 2017-05-31 | 北京邮电大学 | 1 × 8 high-performance photonic crystal parallel multiplied sensor array structure of the one kind based on silicon on insulator (SOI) |
| CN106772703B (en) * | 2016-12-16 | 2019-08-13 | 北京邮电大学 | One kind being based on the parallel multiplied sensor array structure of 1 × 8 high-performance photonic crystal of silicon on insulator (SOI) |
| CN107703056A (en) * | 2017-09-25 | 2018-02-16 | 电子科技大学 | SOI micro-loop photon biology sensor preparation methods based on 1-D photon crystal |
| CN107703056B (en) * | 2017-09-25 | 2020-11-10 | 电子科技大学 | Preparation method of SOI micro-ring photon biosensor based on one-dimensional photonic crystal |
| CN107833939A (en) * | 2017-11-22 | 2018-03-23 | 绍兴文理学院 | 2 D photon crystal selective radiator and preparation method |
| CN107833939B (en) * | 2017-11-22 | 2021-09-03 | 绍兴文理学院 | Two-dimensional photonic crystal selective radiator and preparation method thereof |
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Application publication date: 20120530 |