CN103346409B - Mid-infrared multiband and broadband periodically absorbent structure based on medium modulation - Google Patents
Mid-infrared multiband and broadband periodically absorbent structure based on medium modulation Download PDFInfo
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Abstract
Mid-infrared multiband and broadband periodically absorbent structure based on medium modulation, belong to functional material and device arts, the present invention includes continuous print underlying metal film and the circle being arranged on underlying metal film inhales ripple cell array, each suction ripple unit size is identical, described suction ripple unit includes at least two layer medium layer, and the dielectric constant of each layer medium is different, is metal level between adjacent dielectric, most last layer dielectric layer be provided above with metal level。The present invention can realize two waveband, three wave bands and more multiwave multiband absorbing structure or broadband absorbing structure flexibly by the form of multiple structure superposition, and absorbing property is excellent。
Description
Technical field
The invention belongs to functional material and device arts, be applied to multiple fields such as the modulation of mid-infrared emissivity, the detection camouflage of mid-infrared heat radiation, mid-infrared multiple spectra dot matrix imaging。
Background technology
Periodically perfect absorbent structure body (Perfectabsorber) is a kind of electromagnet structure devices derived from electromagnetism Meta Materials (Electromagneticmetamaterial) in recent years。This absorbent structure body utilizes the resonance characteristic of Meta Materials: metal array unit can produce electric resonance with incident electric fields, and between double layer of metal parallel up and down, induce antiparallel electric current, cause and incident magnetic produce magnetic resonance so that electromagnetic wave by local effectively in construction unit。Theoretical according to equivalence ature of coal, its electromagnetic property can pass through effective dielectric constant [ε (ω)] and Effective permeability [μ (ω)] represents。By being modulated appropriately electric resonance and magnetic resonance, it is possible to make this structure mate with space impedance:Thus incident electromagnetic wave is reflected into zero at resonance point, simultaneously because underlying metal prevents passing through of incidence wave, therefore, it can form an absworption peak being close to 100% assimilation effect。This absorbent structure body has absorption efficiency height, and EMR electromagnetic resonance characteristic is adjustable, to the plurality of advantages such as incident angle, polarised direction be insensitive。The EMR electromagnetic resonance characteristic being based on periodically perfect absorbent structure body yet with this assimilation effect produces, and therefore absorption band is narrow, frequency range is single is its intrinsic defect。But in many applications, such as heat radiation manipulator, multiple spectra dot matrix imaging, infrared emanation detection camouflage etc., in the urgent need to a kind of periodicity perfection absorbent structure body with multiband or broadband assimilation effect。
Summary of the invention
The technical problem to be solved is to provide a kind of multiband being operated in middle-infrared band and wide-band periodically absorbent structure, it is possible to realizes two waveband, three wave bands and more multiwave multiband and absorbs。
This invention address that described technical problem employed technical scheme comprise that, mid-infrared multiband and broadband periodically absorbent structure based on medium modulation, it is characterized in that, ripple cell array is inhaled including continuous print underlying metal film and the circle being arranged on underlying metal film, each ripple unit size of inhaling is identical, and described suction ripple unit includes at least two layer medium layer, and the dielectric constant of each layer medium is different, be metal level between adjacent dielectric, most last layer dielectric layer be provided above with metal level。
The material of described metallic film and metal level is Al。Described suction ripple unit is followed successively by from bottom-up: material is MgF2First medium layer, material is the first metal layer of Al, material to be the second dielectric layer of ZnS, material be Al the second metal level。The diameter 1.9 μm of each suction ripple unit；In distance of center circle, inhaling the line-spacing of ripple cell array, row from being all 2.7 μm, each thickness of dielectric layers is all 0.08 μm, and each metal layer thickness is all 0.05 μm, and underlying metal film thickness is 100nm。
Or, described suction ripple unit is followed successively by from bottom-up: material is MgF2First medium layer, material be the first metal layer of Al, material be PbF2Second dielectric layer, material be second metal level of Al, material be ZnS the 3rd dielectric layer, material be Al the 3rd metal level。The diameter 1.9 μm of each suction ripple unit；In distance of center circle, inhaling the line-spacing of ripple cell array, row from being all 2.7 μm, each thickness of dielectric layers is all 0.08 μm, and each metal layer thickness is all 0.05 μm, and underlying metal film thickness is 100nm。
Or, described suction ripple unit is followed successively by from bottom-up: material is MgF2First medium layer, material be the first metal layer of Al, material be PbF2Second dielectric layer, material be second metal level of Al, material be Al2O3The 3rd dielectric layer, material be the 3rd metal level of Al。The diameter 1.9 μm of each suction ripple unit；In distance of center circle, inhaling the line-spacing of ripple cell array, row from being all 2.7 μm, first medium layer thickness is 0.06 μm, and second dielectric layer and the 3rd thickness of dielectric layers are all 0.08 μm, and each metal layer thickness is all 0.05 μm, and underlying metal film thickness is 100nm。
Described dielectric layer material is Al2O3、Y2O3、MgF2、PbF2, ZnS, ZnSe, Ge or Si, and each dielectric layer material is different。
The present invention has following prominent advantage:
1. can realize two waveband, three wave bands and more multiwave multiband absorbing structure or broadband absorbing structure flexibly by the form of multiple structure superposition, and absorbing property is excellent；
2. simple in construction, thickness is thin, and volume is light, it may be achieved with the good compatibility of other devices；
3. preparation technology is simple, be easily achieved, and can obtain large-area absorbent structure device。
Accompanying drawing explanation
Fig. 1 is the basic cell structure figure of the periodicity absorbent structure invented: (a) periodic cells structure front schematic view and elementary structure parameter, (b) two waveband absorbent structure side schematic view, (c) three wave band absorbent structure side schematic view, (d) wide-band and wave-absorbing texture edge schematic diagram。
Fig. 2 is the front periodic arrangement structural representation of the periodicity absorbent structure invented。
Fig. 3 is the absorbance curves figure of the periodicity absorbent structure MA-1 invented。
Fig. 4 is the absorbance curves figure of the periodicity absorbent structure MA-2 invented。
Fig. 5 is the absorbance curves figure of the periodicity absorbent structure MA-3 invented。
Detailed description of the invention
The periodicity absorbent structure of the present invention is made up of " metal-dielectric " sandwich and the bottom continuous metal thin film of multilamellar。The characteristic utilizing the position of resonance peak linearly increasing with the increase of dielectric layer dielectric constant regulates the characteristic of absworption peak。When adopting the medium that multiple dielectric constants is bigger in the dielectric layer, the resonance peak produced due to each resonant layer relatively far apart and is close to independent, it is possible to superposition is formed and realizes the multiwave absorbent structure such as two waveband, three wave bands；When adopting multiple dielectric constant medium relatively in the dielectric layer, the resonance peak produced due to each resonant layer is close to each other, it is possible to superposition is formed and realizes wide band absorbent structure。
In the present invention, absorbent structure design is with Si for the substrate base supported, and continuous metal film and the upper strata metal patch of bottom are Al。When adopting 2 groups of " metal-dielectric " sandwiches, its dielectric layer respectively MgF2And ZnS, it is possible to obtain the absworption peak of two waveband；When adopting 3 groups of " metal-dielectric " sandwiches, its dielectric layer respectively MgF2、PbF2, ZnS, it is possible to obtain the absworption peak of three wave bands；When adopting 3 groups of " metal-dielectric " sandwiches, its dielectric layer is MgF respectively2、PbF2、Al2O3, it is possible to obtain the absworption peak of wide-band。Obtain reflectance, absorbance parameter by business electromagnetic simulation software CSTMicrowaveStudio, calculate and obtain absorbance curves。
The suction ripple unit of the present invention is periodic arrangement, especially, inhales the arrangement of ripple unit for array, and due to each, to inhale ripple unit size identical, to inhale the central point of ripple unit as reference。For circle inhale ripple unit, the present invention using distance of center circle as the line-spacing of array and row from basis of reference。Fig. 1 illustrates the scope of each suction ripple unit and shared underlying metal film, and metallic film is square, and the adjacent distance of center circle of its length of side a and orthogonal direction is identical。
Embodiment 1:
As shown in Fig. 1 (b), adopt 2 groups of " metal-dielectric " sandwiches and the absorbent structure of bottom continuous metal thin film composition, realize the absorbent structure MA-1 of two waveband, first the Si substrate base of supportive is the continuous metal Al thin film of 100nm, is periodic 2 groups of circular " Al-MgF thereon2" and " Al-ZnS " paster sandwich。Wherein periodic unit size a=2.7 μm, circular patch is of a size of d=1.9 μm, thickness of dielectric layers h1=h3=0.08 μm, metal layer thickness h2=h4=0.05μm,MgF2The dielectric constant that dielectric constant is 1.75, ZnS be 4.48。Its absorbance curves as it is shown on figure 3, it can be seen that due to the modulating action of two-layered medium in figure, this structure respectively 5.17 μm, 7.8 μm obtain 95.4%, 91.1% absworption peak, it is thus achieved that the absworption peak of a two waveband。
Embodiment 2:
As shown in Fig. 1 (c), adopt 3 groups of " metal-dielectric " sandwiches and the absorbent structure of bottom continuous metal thin film composition, realize the absorbent structure MA-2 of three wave bands, first the Si substrate base of supportive is the continuous metal Al thin film of 100nm, is periodic 3 groups of circular " Al-MgF thereon2”、“Al-PbF2" and " Al-ZnS " paster sandwich。Wherein periodic unit size a=2.7 μm, circular patch is of a size of d=1.9 μm, thickness of dielectric layers h1=h3=h5=0.08 μm, metal layer thickness h2=h4=h6=0.05μm,MgF2Dielectric constant be 1.75, PbF2The dielectric constant that dielectric constant is 2.83, ZnS be 4.48。Its absorbance curves as shown in Figure 4, it can be seen that due to the modulating action of multilayer dielectricity in figure, this structure respectively 5.22 μm, 6.35 μm, 7.76 μm obtain 96.7%, 98%, 91.2% absworption peak, it is thus achieved that the absworption peak of three wave bands。
Embodiment 3:
As shown in Figure 1 (d) shows, adopt 3 groups of " metal-dielectric " sandwiches and the absorbent structure of bottom continuous metal thin film composition, realize the absorbent structure MA-3 of wide-band, first the Si substrate base of supportive is the continuous metal Al thin film of 100nm, is periodic 3 groups of circular " Al-MgF thereon2”、“Al-PbF2" and " Al-Al2O3" paster sandwich。Wherein periodic unit size a=2.7 μm, circular patch is of a size of d=1.9 μm, thickness of dielectric layers h1=0.06 μm, h3=h5=0.07 μm, metal layer thickness h2=h4=h6=0.05μm,MgF2Dielectric constant be 1.75, PbF2Dielectric constant be 2.83, Al2O3Dielectric constant be 2.28。Its absorbance curves is as it is shown in figure 5, it can be seen that due to the modulating action of multilayer dielectricity, this structure achieves, at the absorbance height of 87%, the absworption peak that a width reaches 1.3 μm, it is thus achieved that the absworption peak of a wide-band in figure。
Claims (3)
1. based on the mid-infrared multiband of medium modulation and broadband periodically absorbent structure, it is characterized in that, ripple cell array is inhaled including continuous print underlying metal film and the circle being arranged on underlying metal film, each suction ripple unit size is identical, described suction ripple unit includes at least two layer medium layer, and the dielectric constant of each layer medium is different, is metal level between adjacent dielectric, most last layer dielectric layer be provided above with metal level, the material of described metallic film and metal level is Al；
Described suction ripple unit is followed successively by from bottom-up:
Material is MgF2First medium layer, material is the first metal layer of Al, material to be the second dielectric layer of ZnS, material be Al the second metal level；
Or, described suction ripple unit is followed successively by from bottom-up:
Material is MgF2First medium layer, material be the first metal layer of Al, material be PbF2Second dielectric layer, material be second metal level of Al, material be ZnS the 3rd dielectric layer, material be Al the 3rd metal level；
Or, described suction ripple unit is followed successively by from bottom-up:
Material is MgF2First medium layer, material be the first metal layer of Al, material be PbF2Second dielectric layer, material be second metal level of Al, material be Al2O3The 3rd dielectric layer, material be the 3rd metal level of Al。
2. the mid-infrared multiband based on medium modulation as claimed in claim 1 and broadband periodically absorbent structure, it is characterised in that
Described suction ripple unit is followed successively by from bottom-up:
Material is MgF2First medium layer, material is the first metal layer of Al, material to be the second dielectric layer of ZnS, material be Al the second metal level；The diameter 1.9 μm of each suction ripple unit；In distance of center circle, inhaling the line-spacing of ripple cell array, row from being all 2.7 μm, each thickness of dielectric layers is all 0.08 μm, and each metal layer thickness is all 0.05 μm, and underlying metal film thickness is 100nm。
3. the mid-infrared multiband based on medium modulation as claimed in claim 1 and broadband periodically absorbent structure, it is characterised in that described suction ripple unit is followed successively by from bottom-up:
Material is MgF2First medium layer, material be the first metal layer of Al, material be PbF2Second dielectric layer, material be second metal level of Al, material be ZnS the 3rd dielectric layer, material be Al the 3rd metal level；
The diameter 1.9 μm of each suction ripple unit；In distance of center circle, inhaling the line-spacing of ripple cell array, row from being all 2.7 μm, each thickness of dielectric layers is all 0.08 μm, and each metal layer thickness is all 0.05 μm, and underlying metal film thickness is 100nm。
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| CN103913788B (en) * | 2013-11-20 | 2016-08-17 | 电子科技大学 | Middle-infrared band broadband cycle absorbing material |
| CN103823256A (en) * | 2014-01-15 | 2014-05-28 | 电子科技大学 | Middle infrared band broadband periodic wave absorbing material based on medium regulation |
| CN104979641A (en) * | 2015-07-17 | 2015-10-14 | 兰州大学 | Broadband wave absorbing body and application thereof |
| CN105762532B (en) * | 2016-02-19 | 2019-05-10 | 电子科技大学 | A kind of far infrared broadband periodicity absorbent structure |
| CN107404834B (en) * | 2017-08-29 | 2023-05-30 | 苏州苏大维格科技集团股份有限公司 | Electromagnetic wave absorbing structure and manufacturing method thereof |
| CN108336505B (en) * | 2018-01-31 | 2020-07-28 | 电子科技大学 | Terahertz waveband broadband polarization insensitive metamaterial |
| CN109855327B (en) * | 2018-12-24 | 2021-04-16 | 中国科学院宁波材料技术与工程研究所 | Selective absorption emitter |
| CN110707437B (en) * | 2019-10-25 | 2021-01-26 | 中国计量大学 | Terahertz dual-band absorber based on plastic cone frustum structure |
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