CN114243310A - Optical transparent broadband wave absorbing body with high wave absorbing rate - Google Patents
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- H01—ELECTRIC ELEMENTS
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- H01Q17/00—Devices for absorbing waves radiated from an antenna; Combinations of such devices with active antenna elements or systems
Abstract
The invention discloses an optical transparent broadband wave absorber with high wave absorption rate, which consists of N multiplied by M wave absorber units arranged in an array; the wave absorbing body unit comprises a top layer PET dielectric layer, a middle layer PET dielectric layer, a bottom layer PET dielectric layer and a middle air layer; each dielectric layer comprises a dielectric plate and a patterned ITO resistance film layer printed on the dielectric plate, and the bottom PET dielectric layer also comprises a bottom ITO resistance film layer; the pattern of the ITO resistance film layer of the top PET medium layer is a square bending ring structure; the pattern of the ITO resistance film layer of the middle PET medium layer is a regular octagonal ring and an internal interdigital structure; the pattern of the ITO resistance film layer of the bottom PET dielectric layer is a square ring structure; the wave absorbing body unit realizes both broadband and high-efficiency wave absorption and high light transmittance in a broadband by overlapping multiple frequency points of structures with different sizes, and has good RCS (radar cross section) reduction performance.
Description
Technical Field
The invention belongs to the technical field of electromagnetic fields and microwaves, and particularly relates to an optical transparent broadband wave absorber with high wave-absorbing rate. The invention has optical transparency, realizes the broadband and high-efficiency absorption of electromagnetic waves, and can be used for carrier platforms and antenna systems with low scattering requirements.
Background
With the continuous development of radar detection technology, the battlefield viability of stealth targets is seriously threatened. In order to improve the stealth performance of the target, the scattering characteristics of the target need to be researched, and a key index for measuring the scattering characteristics of the target is Radar Cross Section (RCS), wherein lower RCS means better stealth performance. In recent years, the electromagnetic super surface has attracted attention of researchers due to the ability of flexibly controlling electromagnetic waves, and research on reduction of RCS (radar cross section) by using the electromagnetic super surface is greatly developed.
The super-surface wave absorber converts the energy of the incident electromagnetic waves into other forms of energy, so that the electromagnetic waves in the working frequency band of the wave absorber are absorbed. Compared with the traditional material type wave absorber, the super-surface wave absorber has the characteristics of light and thin structure, low cost, high absorption rate and the like. In order to expand the working frequency band of the super-surface wave absorber and improve the wave absorbing performance of the super-surface wave absorber, researchers mainly adopt the methods of using multilayer or three-dimensional structure design, adding a matching layer, adding a lumped element and the like.
In the patent of 'a vertical transparent metamaterial wave absorber' (application number: CN201610079121.9, application publication number: CN105552566A) of Wuhan theory university, a transparent metamaterial wave absorber formed by arranging transparent metamaterial units on a transparent reflection back plate and embedding a periodic array into a transparent flat plate matrix is disclosed, but the excellent wave absorbing property of the wave absorber is only limited under the condition that specifically polarized electromagnetic waves are incident. The Harbin industry university discloses an ultra-wideband metamaterial wave absorber in a patent of 'a polarization insensitive low RCS ultra-wideband metamaterial wave absorber with visible light transmission' (application number: 202010358422.1, application publication number: CN111430926A), the wave absorber is composed of a patterned impedance film layer, a first transparent substrate, a middle transparent medium layer, a second transparent substrate and a transparent conductive film from top to bottom in sequence, the wave absorber can realize the absorption rate of more than 90% in 125% of relative bandwidth while the visible light transparency is not less than 75%, and the wave absorber also has the characteristic of polarization insensitivity. The wave absorber only adopts a single-layer patterned impedance film layer, and the absorption bandwidth and the absorption rate of the wave absorber can be further improved by using a multi-layer impedance film structure.
In 2018, a super-surface absorber was proposed in 591-one 595 page published in the journal of IEEE Antennas and Wireless presentation Letters, volume 17, No. 4, the author proposes a wave absorber designed by using a three-Layer structure to stack, adding lumped resistors and increasing a medium matching Layer, and the wave absorber realizes effective absorption of electromagnetic waves in a 1.64-17.6 GHz ultra-wide frequency band, but the wave absorber of the multi-Layer structure does not have the characteristic of optical transparency.
At present, the problems of narrow band, low efficiency, single function and the like exist in the work of reducing RCS by utilizing a super surface wave absorber. The wave absorber with high light transmittance, wide absorption frequency band, high absorption rate, low profile, low radar cross section and other excellent performances is designed, and the wave absorber has high research and application values.
Disclosure of Invention
The invention aims to provide an optical transparent broadband high-wave-absorbing-rate wave absorber aiming at the problem that a conventional wave absorber cannot take a broadband and high-efficiency wave absorption and high light transmittance into consideration.
The invention is realized by the following technical scheme.
The invention provides an optical transparent broadband wave absorber with high wave absorption rate, which consists of N multiplied by M wave absorber units arranged in an array, wherein N is more than or equal to 10 columns, and M is more than or equal to 10 rows;
the wave absorbing body unit comprises a top PET medium layer, a middle PET medium layer and a bottom PET medium layer which are distributed from top to bottom, and an air layer is arranged among the three medium layers;
each dielectric layer comprises a dielectric plate and a patterned ITO resistance film layer printed on the dielectric plate, and the bottom PET dielectric layer also comprises an unetched ITO resistance film layer;
the pattern of the ITO resistance film layer of the top PET medium layer is a square bending ring structure; the pattern of the ITO resistance film layer of the middle PET medium layer is a regular octagonal ring and an internal interdigital structure; the pattern of the ITO resistance film layer of the bottom PET dielectric layer is a square ring structure;
the wave absorbing body unit realizes high wave absorbing rate in a wide frequency band by overlapping multiple frequency points of structures with different sizes.
In combination with the technical scheme provided above, the square bending ring structure of the top layer PET dielectric layer is symmetrically bent at equal intervals on each side of the square for three periods, and the width of the inner bending side is smaller than that of the side bending side.
The technical scheme who provides more than combining, the regular octagon shape ring of intermediate level PET dielectric layer includes outside regular octagon structure with inside interdigital structure, long inboard symmetric distribution in the outside of regular octagon is the interdigital structure that the cross distributes, and interdigital structure middle part is the solid, and a plurality of broach extends respectively in four directions of solid, inwards extends a plurality of broach on four sides of regular octagon structure to it is the interdigital form to insert each other.
By combining the technical scheme provided above, the width and the extension length of each comb tooth are the same.
By combining the technical scheme provided above, the thickness of the bottom PET dielectric layer is larger than that of the middle PET dielectric layer and larger than that of the top PET dielectric layer.
By combining the technical scheme provided above, the thickness of the air layer between the top layer PET dielectric layer and the middle layer PET dielectric layer is larger than that of the air layer between the middle layer PET dielectric layer and the bottom layer PET dielectric layer.
By combining the technical scheme provided above, the air layer is formed by preparing the support frame around the layers by using the transparent composite material, and the air is filled in the support frame.
By combining the technical scheme provided above, the patterned ITO resistive film and the ITO resistive film not etched are obtained by coating a layer of Indium Tin Oxide (ITO) coating on a transparent organic substrate material through a sputtering process and then performing high-temperature annealing treatment.
By combining the technical scheme provided above, the ITO resistance film layer is a polyethylene terephthalate film.
The wave absorber structure of the invention uses transparent polyester plastic and Indium Tin Oxide (ITO) film to replace the traditional medium substrate and periodic metal pattern so as to realize the optical transparency characteristic. By adding the multi-layer design of the air cavity, a multi-layer transparent impedance film structure with different electrical sizes is introduced to carry out methods such as multi-frequency point superposition and the like so as to improve the absorption frequency band and the absorption rate of the wave absorber.
Due to the adoption of the technical scheme, the invention has the following beneficial effects:
first, the present invention has the property of being optically transparent. The transparent polyester plastic and the ITO film are used for replacing a medium substrate and a patterned metal patch in a traditional metamaterial wave absorber, wherein the light transmittance of the used ITO film in the whole visible light wave band is larger than 65%, and the optical transparent characteristic of the wave absorber is realized. The optical transparent characteristic of the super-surface wave absorber further expands the application prospect of the structure.
Secondly, the wave absorber designed by the invention adopts an ITO film material with loss characteristic, adds a multilayer design of an air cavity, introduces structures with different electrical sizes for multi-frequency point superposition, introduces an interdigital structure to flexibly adjust the surface capacitance of a structural layer, and enables the super-surface wave absorber to have the working performance of wide-frequency-band high absorption rate (the relative bandwidth of the absorption rate is more than 90% is 133%, and the relative bandwidth of the absorption rate is more than 95% is 115%). The wave absorber unit has good polarization insensitivity and incident angle stability, and can still maintain the wave absorbing rate of more than 80% in a 5-25 GHz frequency band when the incident angle is increased to 50 degrees.
Third, the present invention possesses good RCS reduction performance. When the incident angle range of electromagnetic waves of two modes of TE and TM is 0-30 degrees, the average RCS value of the super-surface wave absorber is reduced by not less than 10dB in a 5-25 GHz broadband compared with that of a metal plate with the same size. When the incident angle of the electromagnetic waves reaches 45 degrees, the average dual-station RCS reduction of the super-surface wave absorber in a frequency band of 5-25 GHz is still larger than 8 dB.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this application, illustrate embodiment(s) of the invention and together with the description serve to explain the principles of the invention:
FIG. 1 is a schematic view of the overall structure of the present invention;
FIG. 2 is a schematic structural diagram of a metamaterial absorber unit according to the present invention;
FIG. 3 is a top view of the underlying structure in the cell structure of the present invention;
FIG. 4(a) is a top view of an interlayer structure in a cell structure of the present invention;
FIGS. 4(b), (c) are schematic diagrams of interdigitated structures in a patterned ITO resistive film of an interlayer structure of the present invention;
FIG. 5 is a top view of the top layer structure in the cell structure of the present invention;
FIG. 6 is a simulation result diagram of the wave absorption rate of the unit of the present invention;
FIG. 7 is a graph of S parameter simulation results for the inventive unit;
FIG. 8 is a simulation result diagram of the wave absorption rate of the wave absorber unit according to the present invention when the electromagnetic wave is obliquely incident at different angles;
FIG. 9(a) is a simulation curve diagram of a single station RCS of a broadband super surface wave absorber comprising 10 × 10 wave absorbing units when TE waves are vertically incident;
FIG. 9(b) is a single-station RCS simulation curve diagram of a broadband super-surface wave absorber comprising 10 × 10 wave absorbing units when TM waves are vertically incident;
fig. 10(a) is a graph of a dual-station RCS simulation with a mirror direction of an oblique incidence direction as an observation point when a TE wave is obliquely incident at 15 ° for a broadband super surface wave absorber including 10 × 10 wave absorbing elements;
fig. 10(b) is a graph of a dual-station RCS simulation with a mirror direction of an oblique incidence direction as an observation point when a TM wave is obliquely incident at 15 ° for a broadband super-surface absorber including 10 × 10 wave-absorbing elements;
fig. 11(a) is a graph of a dual-station RCS simulation with a mirror direction of an oblique incidence direction as an observation point when a TE wave is obliquely incident at 30 ° for a broadband super surface wave absorber including 10 × 10 wave absorbing elements;
fig. 11(b) is a graph of a dual-station RCS simulation curve with a mirror direction of an oblique incidence direction as an observation point when a TM wave is obliquely incident at 30 ° for a broadband super surface wave absorber including 10 × 10 wave absorbing elements;
fig. 12(a) is a graph of a dual-station RCS simulation with a mirror direction of an oblique incidence direction as an observation point when a TE wave is obliquely incident at 45 ° for a broadband super surface wave absorber including 10 × 10 wave absorbing elements;
fig. 12(b) is a graph of a two-station RCS simulation with a mirror direction of an oblique incidence direction as an observation point when a TM wave is obliquely incident at 45 ° in a broadband super surface absorber including 10 × 10 absorbing elements.
In the figure, 1 is a top layer patterned ITO resistance film layer, 2 is a top layer PET dielectric layer, 3 is a middle layer patterned ITO resistance film layer, 4 is a middle layer PET dielectric layer, 5 is a bottom layer ITO resistance film layer, 6 is a bottom layer PET dielectric layer, and 7 is an unetched ITO resistance film layer.
Detailed Description
The present invention will now be described in detail with reference to the drawings and specific embodiments, wherein the exemplary embodiments and descriptions of the present invention are provided to explain the present invention without limiting the invention thereto.
Referring to fig. 1, an optical transparent broadband wave absorber with high wave-absorbing rate provided by the embodiment of the present invention is composed of N × M wave absorber units arranged in an array, where N is greater than or equal to 10 columns, and M is greater than or equal to 10 rows. The wave absorber unit comprises a top layer PET medium layer 2, an air layer, a middle layer PET medium layer 4, an air layer and a bottom layer PET medium layer 6. The top PET medium layer 2 and the middle PET medium layer 4 both use the PET medium layers as substrates, and the top patterned ITO resistance film layer 1 is arranged on the upper surfaces of the medium layers; the middle of the bottom PET medium layer 6 is a PET medium layer, the upper surface of the medium layer is a patterned bottom ITO resistance film layer 5, and the lower surface of the medium layer is an unetched ITO resistance film layer 7.
Referring to fig. 2, in one embodiment, the unit structure of the wave absorber of the present invention is described in further detail.
The integral structure size of the wave absorbing body unit is 11 multiplied by 6.925mm3The length and width of the unit are both P11 mm. The upper surface of the top layer of the wave absorber unit is an ITO (indium tin oxide) resistance film layer 1, a square bending ring structure with an etching pattern is adopted, the substrate of the top layer is a PET (polyethylene terephthalate) dielectric layer 2, and the thickness of the PET dielectric layer 2 is H1-0.175 mm.
The thickness of the bottom PET medium layer of the wave absorber unit is larger than that of the middle PET medium layer and larger than that of the top PET medium layer, and the thickness of an air layer between the top PET medium layer and the middle PET medium layer is larger than that of the air layer between the middle PET medium layer and the bottom PET medium layer.
The upper surface of the middle layer PET medium layer is an ITO resistance film layer 3, etching patterns are respectively of a regular octagonal ring combined inner interdigital structure, and the substrate of the middle layer is a middle layer PET medium layer 4. The thickness of the middle PET medium layer 4 is H2-0.75 mm, and an air layer with the thickness of GAP 1-3 mm is arranged between the top layer and the middle layer.
The bottom layer upper surface of the wave absorber unit is a bottom layer ITO resistance film layer 5, etching patterns are of square ring structures respectively, the substrate of the bottom layer is a bottom layer PET dielectric layer 6, and the thickness of the bottom layer PET dielectric layer 6 is H3-1 mm. The lower surface of the bottom layer is an unetched ITO resistance film layer 7, and an air layer with the thickness of GAP 2-2 mm is arranged between the middle layer and the bottom layer.
Wherein, the air layer is prepared with a support frame by transparent composite material at the periphery of the layer, and the inside is filled with air. The patterned ITO resistive film and the ITO resistive film which is not etched are obtained by coating a layer of Indium Tin Oxide (ITO) coating on a transparent organic substrate material through a sputtering process and then carrying out high-temperature annealing treatment. The ITO resistance film layer is a polyethylene glycol terephthalate film. The square resistance values of the four ITO resistance films of the wave absorber unit are all 35 omega.
Referring to fig. 3, the etching pattern of the ITO resistance film layer on the bottom upper surface of the present absorber unit will be described in further detail. The etching pattern of the bottom ITO resistance film layer 5 on the upper surface of the bottom of the wave absorber unit is a square ring structure, and the side length of the outer square is 11mm, and the side length of the inner square is W1 is 1.4 mm.
Referring to fig. 4(a) - (c), the etching pattern of the patterned ITO resistance film layer on the upper surface of the PET dielectric layer 4 as the intermediate layer of the present absorber unit will be described in further detail.
Referring to fig. 4(a), the etching pattern of the middle layer patterned ITO resistance film layer 3 on the upper surface of the middle layer of the wave absorber unit is a regular octagon ring structure and an internal interdigital structure, the interdigital structures are symmetrically distributed on the inner side of the outer side of the regular octagon and are distributed in a cross shape, the middle part of the interdigital structure is a solid body, a plurality of comb teeth extend from the solid body in four directions respectively, a plurality of comb teeth extend from the four sides of the regular octagon structure inwards, and the comb teeth are inserted into each other to form an interdigital shape. The width and the extension length of each comb tooth are the same.
The outer length of the n-octagonal ring is L2-4.17 mm, and the thickness of the n-octagonal ring is W3-0.46 mm. The side length W4 of the inner square is 2.38 mm. In the interdigital structures between the eight-side shaped ring and the four sides of the square inside, the four interdigital structures are the same, and the length of the interdigital structure is L3-3.21 mm.
Referring to fig. 4(b) and 4(c), the interdigital structure 8 in fig. 4(a) is further described, where the width of the interdigital structure is W8 ═ 0.14mm, the intervals between adjacent interdigital structures extending from the same side are the same, and the interval is W7 ═ 0.42 mm.
Referring to fig. 5, the etching pattern of the ITO resistance film layer on the top surface of the top layer of the present absorber unit will be described in further detail.
The etching pattern of the top patterned ITO resistance film layer 1 on the upper surface of the top layer of the wave absorber unit is a square bending ring structure, the square patterned ITO resistance film layer is symmetrically bent at equal intervals on each side of the square patterned ITO resistance film layer for three periods, and the width of the inner bending side is smaller than that of the side bending side. Namely, on the basis of the square ring, the same bending structure is added to four sides of the square ring so as to introduce more resonances. The bending structure is as shown in fig. 5, each side of the square ring has two same inward-recessed bends, the length of the side length of the square ring between two recesses is L5 ═ 2.1mm, the length of the side length of the square ring on two sides of two recesses is L4 ═ L6 ═ 3.35mm, and the width of each recess is L7 ═ 0.5 mm. The thickness of the square ring at the position which is not sunken inwards and the thickness of the square ring at the side surface which is sunken inwards are both W5-0.8 mm, and the thickness of the square ring at the bottom part which is sunken inwards is W6-0.5 mm.
The technical effects of the invention are further explained by combining simulation experiments as follows:
the commercial simulation software is used for carrying out simulation analysis on the broadband high-absorptivity super-surface wave absorber unit, and the simulation curve of the wave absorbing rate of the wave absorber unit when electromagnetic waves are vertically incident is shown in figure 6. In fig. 6, the abscissa represents frequency values in GHz, and the ordinate represents wave-absorbing rates. As can be seen from the figure, the wave absorption rate of the wave absorber unit is more than 90% in the frequency band of 4.92-24.55 GHz, and the wave absorber unit realizes the wave absorption rate of more than 95% in the frequency band of 5.74-21.85 GHz. Compared with the super-surface wave absorber which realizes 90% wave absorption rate in other working frequency bands, the wave absorber unit realizes higher absorption rate, can realize more efficient absorption of electromagnetic waves in a wide frequency band, and realizes performance improvement relative to other resistance film type super-surface wave absorbers.
The simulation results of the S-parameters of the absorber unit are shown in fig. 7. The frequency values are plotted on the abscissa of fig. 7 in GHz and the S-parameter on the ordinate in dB. The curve with the square symbol in FIG. 7 is S11Curve with a circular mark and curve S21Curve line. As can be seen from the figure, the unit reflection coefficient is less than-10 dB in the frequency band of 4.91-24.54 GHz, and the transmission coefficient is less than-30 dB in the full frequency band. The low transmission coefficient is caused by an ITO resistive film adopted in the wave absorber unit structure, and the resistive film has the characteristic of low surface resistance, so that most electromagnetic wave energy is converted into internal energy through ohmic loss and cannot penetrate through the ITO resistive film.
The simulation curve of the wave absorption rate when the electromagnetic wave obliquely enters the wave absorber unit under different incident angles is shown in fig. 8. As can be seen from FIG. 8, when the electromagnetic wave is obliquely incident on the wave absorber unit, the wave absorption rate of the unit is gradually reduced along with the increase of the incident angle, and when the incident angle is increased to 50 degrees, the wave absorption rate of the wave absorber unit is still maintained at more than 80% within the frequency band of 5-25 GHz, which reflects that the wave absorber unit has stable working performance under the irradiation of the oblique incident electromagnetic wave.
In order to verify the scattering characteristics of the invention to the electromagnetic waves, the invention is modeled and simulated by using commercial simulation software. The modeling model of the invention is shown in fig. 1, the wave absorber of the invention is composed of N × M (N is 10, M is 10) wave absorber units arranged in an array, and the structural size of the broadband super-surface wave absorber is 110 × 110 × 6.925mm3. Fig. 9(a) and 9(b) are graphs of single-station RCS when TE and TM waves, respectively, are perpendicularly incident to the present invention. In FIG. 9(a) and FIG. 9(b)The abscissa is the frequency value in GHz and the ordinate is RCS in dBsm. In fig. 9(a) and 9(b), the curve with a square mark is the RCS simulation curve of the wave absorber, the curve with a circular mark is the RCS simulation curve of the equal-size metal plate, and the metal plate with the same size is taken as a reference to verify the absorption performance of the broadband super-surface wave absorber on the electromagnetic wave. When TE waves are vertically incident, the broadband super-surface wave absorber has an obvious RCS reduction effect on 4.5-26 GHz, and the average RCS reduction amount is 12.05 dB; when TM waves are vertically incident, the broadband super-surface wave absorber has an obvious RCS reduction effect on 4.5-26 GHz, and the average RCS reduction amount is 12.39 dB. Simulation results show that when two polarized plane waves vertically enter, the broadband super-surface wave absorber can effectively absorb electromagnetic waves in a wide working frequency band.
Fig. 10(a) and 10(b) are graphs of dual-station RCS when TE and TM waves are obliquely incident at 15 °, respectively. In fig. 10(a) and 10(b), the abscissa represents frequency values in GHz, and the ordinate represents RCS in dBsm. In fig. 10(a) and 10(b), the curve with a square mark is the RCS simulation curve of the wave absorber, the curve with a circular mark is the RCS simulation curve of the equal-sized metal plate, and the metal plate with the same size is taken as a reference to verify the absorption performance of the broadband super-surface wave absorber on the electromagnetic wave. For two-station scattering, the two-station RCS of the super-surface absorber is maximum at this position, with the mirror direction of the oblique incidence direction as the observation point. When TE waves are incident, the broadband super-surface wave absorber has an obvious RCS reduction effect on 4.5-26 GHz, and the average RCS reduction is 11.39 dB; when TM wave is incident, the broadband super-surface wave absorber has an obvious RCS reduction effect on 4.5-26 GHz, and the average RCS reduction amount is 11.87 dB.
Fig. 11(a) and 11(b) are graphs of dual-station RCS when TE and TM waves are obliquely incident at 30 °, respectively. The abscissa in fig. 11(a) and 11(b) is the frequency value in GHz, and the ordinate is RCS in dBsm. In fig. 11(a) and 11(b), the curve with a square mark is the RCS simulation curve of the wave absorber, the curve with a circular mark is the RCS simulation curve of the equal-sized metal plate, and the metal plate with the same size is taken as a reference to verify the absorption performance of the broadband super-surface wave absorber on the electromagnetic wave. When TE waves are incident, the broadband super-surface wave absorber has an obvious RCS reduction effect on 4.5-24 GHz, and the average RCS reduction amount is 10.05 dB; when TM wave is incident, the broadband super-surface wave absorber has an obvious RCS reduction effect on 4.5-24 GHz, and the average RCS reduction amount is 10.51 dB. Simulation results show that when electromagnetic waves are obliquely incident at an angle of 30 degrees, the broadband super-surface wave absorber can still keep a good wave absorbing effect.
Fig. 12(a) and 12(b) are graphs of dual-station RCS when TE and TM waves are obliquely incident at 45 °, respectively. In fig. 12(a) and 12(b), the abscissa represents frequency values in GHz, and the ordinate represents RCS in dBsm. In fig. 12(a) and 12(b), the curve with a square mark is the RCS simulation curve of the wave absorber, the curve with a circular mark is the RCS simulation curve of the equal-sized metal plate, and the metal plate with the same size is taken as a reference to verify the absorption performance of the broadband super-surface wave absorber on the electromagnetic wave. When TE waves are incident, the broadband super-surface wave absorber has an obvious double-station RCS reduction effect on 8-24.5 GHz, and the average RCS reduction amount is 8.31 dB; when TM waves are incident, the broadband super-surface wave absorber has an obvious double-station RCS reduction effect on 7.5-24 GHz, and the average RCS reduction amount is 8.11 dB. Simulation results show that when electromagnetic waves are obliquely incident at an angle of 45 degrees, the performance of the broadband super-surface wave absorber is reduced, but a good wave absorbing effect can be achieved for the electromagnetic waves in a broadband, and the effect that the average RCS reduction is larger than 8dB in the broadband is achieved.
The simulation results show that compared with the prior art, the optical transparent broadband high-wave-absorbing-rate wave absorber realizes the absorption of electromagnetic waves with wider frequency band and higher efficiency on the premise of having the optical transparent characteristic, has good RCS (remote control system) reduction performance, has better polarization insensitivity and incident angle stability, and can be used for carrier platforms and antenna systems with low scattering requirements.
The present invention is not limited to the above-mentioned embodiments, and based on the technical solutions disclosed in the present invention, those skilled in the art can make some substitutions and modifications to some technical features without creative efforts according to the disclosed technical contents, and these substitutions and modifications are all within the protection scope of the present invention.
Claims (9)
1. An optical transparent broadband wave absorber with high wave absorption rate is characterized by consisting of N multiplied by M wave absorber units which are arranged in an array, wherein N is more than or equal to 10 columns, and M is more than or equal to 10 rows;
the wave absorbing body unit comprises a top PET medium layer, a middle PET medium layer and a bottom PET medium layer which are distributed from top to bottom, and an air layer is arranged among the three medium layers;
each dielectric layer comprises a dielectric plate and a patterned ITO resistance film layer printed on the dielectric plate, and the bottom PET dielectric layer also comprises an unetched ITO resistance film layer;
the pattern of the ITO resistance film layer of the top PET medium layer is a square bending ring structure; the pattern of the ITO resistance film layer of the middle PET medium layer is a regular octagonal ring and an internal interdigital structure; the pattern of the ITO resistance film layer of the bottom PET dielectric layer is a square ring structure;
the wave absorbing body unit realizes high wave absorbing rate in a wide frequency band by overlapping multiple frequency points of structures with different sizes.
2. The optically transparent broadband high-absorptivity wave absorber of claim 1, wherein the square bent ring structure of the top layer PET medium layer is bent symmetrically and equidistantly on each side of the square for three periods, and the width of the inner bent side is smaller than that of the side bent side.
3. The optical transparent broadband high-absorptivity wave absorber according to claim 1, wherein the octagonal ring and the internal interdigital structures of the intermediate layer PET medium layer comprise external octagonal structures, interdigital structures distributed in a cross shape are symmetrically distributed on the inner side and the outer side of the octagonal structure, the middle of each interdigital structure is a solid body, a plurality of comb teeth extend from the solid body in four directions respectively, and a plurality of comb teeth extend inwards from the four sides of the octagonal structure and are inserted into the octagonal structure to form an interdigital shape.
4. The optically transparent broadband high absorption absorber according to claim 3, wherein the width and the extension length of each comb tooth are the same.
5. The optically transparent broadband high absorption absorber according to claim 1, wherein the thickness of the bottom layer of PET dielectric layer is greater than the thickness of the middle layer of PET dielectric layer is greater than the thickness of the top layer of PET dielectric layer.
6. The optically transparent broadband high absorption rate absorber according to claim 1, wherein the thickness of the air layer between the top layer PET dielectric layer and the middle layer PET dielectric layer is greater than the thickness of the air layer between the middle layer PET dielectric layer and the bottom layer PET dielectric layer.
7. The optical transparent broadband high-absorption-rate absorber according to claim 6, wherein the air layer is formed by preparing a support frame with transparent composite material around the layers and filled with air.
8. The optical transparent broadband high-absorbing-rate absorber according to claim 1, wherein the patterned ITO resistive film and the unetched ITO resistive film are obtained by coating an Indium Tin Oxide (ITO) coating on a transparent organic substrate material by a sputtering process and then performing high-temperature annealing treatment.
9. The optical transparent broadband high-absorbing-rate absorber according to claim 1, wherein the ITO resistive film layer is a polyethylene terephthalate film.
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|---|---|---|---|---|
| CN115084869A (en) * | 2022-06-24 | 2022-09-20 | 中国人民解放军空军工程大学 | Ultra-wide band wide-angle domain stealth structure material |
| CN116387849A (en) * | 2023-06-05 | 2023-07-04 | 四川九洲电器集团有限责任公司 | Wave absorber periodic unit and ultra-wideband wave absorber based on resistance surface |
-
2021
- 2021-12-23 CN CN202111595371.5A patent/CN114243310A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115084869A (en) * | 2022-06-24 | 2022-09-20 | 中国人民解放军空军工程大学 | Ultra-wide band wide-angle domain stealth structure material |
| CN115084869B (en) * | 2022-06-24 | 2023-08-01 | 中国人民解放军空军工程大学 | Ultra-wideband wide-angle domain stealth structural material |
| CN116387849A (en) * | 2023-06-05 | 2023-07-04 | 四川九洲电器集团有限责任公司 | Wave absorber periodic unit and ultra-wideband wave absorber based on resistance surface |
| CN116387849B (en) * | 2023-06-05 | 2023-08-04 | 四川九洲电器集团有限责任公司 | Wave absorber periodic unit and ultra-wideband wave absorber based on resistance surface |
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