CN104733056B - A kind of ultra wide band absorber based on cascade structure Meta Materials - Google Patents
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Abstract
A kind of ultra wide band absorber based on cascade structure Meta Materials.The present invention relates to a kind of ultra wide band absorber.The present invention is low to solve existing ultra wide band absorber absorptivity, the problem of incident angle is small and absorbing wavelength narrow range can not absorb across multiple wave bands, the present invention uses device physical dimension and electromagnetic wave phase interaction and dielectric material and electromagnetic wave phase interaction collective effect in two ways, cause to couple superposition between different dimension cells, and superposition is coupled between same unit differing dielectric constant, meta-material absorber is realized to absorb electromagnetic wave ultra wide band, absorbing wavelength scope of the absorptivity more than 92% is 284~1524nm, including part ultraviolet waves, whole visible rays and part near-infrared ripple, and under the conditions of incident at 40 ° of inclinations angle, absorptivity remains to reach more than 90%.Present invention can apply to solar cell absorption, heat emitters and optoelectronic device field.
Description
Technical field
The present invention relates to a kind of ultra wide band absorber.
Background technology
Meta Materials, are a kind of artificial compounded electromagnetic materials with remarkable properties, it has also become physics, materialogy, engineering
The disciplinary study focus such as and chemistry, any " tuning " to Electromagnetic performance can be realized using electromagnetism Meta Materials, so as to
Realize the peculiar electromagnetic performance of negative index, sub- diffraction imaging and electromagnetism stealth etc..In recent years, based on electromagnetism Meta Materials
EMR electromagnetic resonance absorber, can be to inciding the specific frequency of absorber by rationally designing the physical size and material parameter of device
The electromagnetic wave of rate realizes 100% perfect absorption, thus is paid high attention to by domestic and international academia.
The content of the invention
The present invention is that existing ultra wide band absorber absorptivity is low, incident angle is small and absorbing wavelength narrow range can not to solve
The problem of being absorbed across multiple wave bands, and a kind of ultra wide band absorber based on cascade structure Meta Materials is provided.
The present invention a kind of ultra wide band absorber based on cascade structure Meta Materials by metallic plate substrate, first medium layer,
The first metal layer, second dielectric layer, second metal layer, the 3rd dielectric layer, the 3rd metal level, the 4th dielectric layer, the 4th metal level,
5th dielectric layer, fifth metal layer, the 6th dielectric layer, the 6th metal level, the 7th dielectric layer, the 7th metal level, the 8th dielectric layer,
8th metal level, the 9th dielectric layer and the 9th metal level composition；Metallic plate substrate level is placed on orlop, in the metallic plate
The center of substrate be arranged in parallel first medium layer, the first metal layer, second dielectric layer, second metal layer, from bottom to top
Three dielectric layers, the 3rd metal level, the 4th dielectric layer, the 4th metal level, the 5th dielectric layer, fifth metal layer, the 6th dielectric layer,
Six metal levels, the 7th dielectric layer, the 7th metal level, the 8th dielectric layer, the 8th metal level, the 9th dielectric layer and the 9th metal level；
The first medium layer, the first metal layer, second dielectric layer, second metal layer, the 3rd dielectric layer, the 3rd metal level, the 4th are situated between
Matter layer, the 4th metal level, the 5th dielectric layer, fifth metal layer, the 6th dielectric layer, the 6th metal level, the 7th dielectric layer, the 7th gold medal
It is concentric cylinder to belong to layer, the 8th dielectric layer, the 8th metal level, the 9th dielectric layer and the 9th metal level；The first medium layer,
The first metal layer, second dielectric layer, second metal layer, the 3rd dielectric layer and the 3rd metal level basal diameter it is identical；Described
Four dielectric layers, the 4th metal level, the 5th dielectric layer, fifth metal layer, the basal diameter phase of the 6th dielectric layer and the 6th metal level
Together；7th dielectric layer, the 7th metal level, the 8th dielectric layer, the 8th metal level, the bottom of the 9th dielectric layer and the 9th metal level
Face diameter is identical；And the first medium layer, the first metal layer, second dielectric layer, second metal layer, the 3rd dielectric layer and the 3rd
The basal diameter of metal level is more than the 4th dielectric layer, the 4th metal level, the 5th dielectric layer, fifth metal layer, the 6th medium
The basal diameter of layer and the 6th metal level；4th dielectric layer, the 4th metal level, the 5th dielectric layer, fifth metal layer, the 6th
The basal diameter of dielectric layer and the 6th metal level is more than the 7th dielectric layer, the 7th metal level, the 8th dielectric layer, the 8th metal
The basal diameter of layer, the 9th dielectric layer and the 9th metal level；The first medium layer, second dielectric layer, the 3rd dielectric layer, the 4th
Dielectric layer, the 5th dielectric layer, the 6th dielectric layer, the 7th dielectric layer, the material of the 8th dielectric layer and the 9th dielectric layer are organic high
Molecularly Imprinted Polymer or inorganic ceramic material；The first medium layer, the 4th dielectric layer and the 7th dielectric layer are same organic high
Molecularly Imprinted Polymer or inorganic ceramic material, the second dielectric layer, the 5th dielectric layer and the 8th dielectric layer are same organic high
Molecularly Imprinted Polymer or inorganic ceramic material, the 3rd dielectric layer, the 6th dielectric layer and the 9th dielectric layer are same organic high
Molecularly Imprinted Polymer or inorganic ceramic material；The dielectric constant of the first medium layer, the 4th dielectric layer and the 7th dielectric layer is more than
The dielectric constant of the second dielectric layer, the 5th dielectric layer and the 8th dielectric layer；The second dielectric layer, the 5th dielectric layer and
The dielectric constant of eight dielectric layers is more than the dielectric constant of the 3rd dielectric layer, the 6th dielectric layer and the 9th dielectric layer；It is described to be based on level
The thickness for joining the ultra wide band absorber of structure metamaterial is 425nm.
Beneficial effects of the present invention：
The present invention using 3 × 3 cascade structure same unit by between differing dielectric constant couple superposition and not
With two kinds of mechanism collective effects of coupling superposition between dimension cells, increase coupling stacked system improves Absorber Bandwidth.The present invention is excellent
In terms of point is mainly reflected in three below：
1st, the physical size of Meta Materials elementary cell is changed, thus it is possible to vary sound of each metamaterial unit to incident electromagnetic wave
Should, multiple Meta Materials elementary cells are arranged according to certain rule, can make Meta Materials that there is continuous macroscopic view to ring to incident electromagnetic wave
Should, the circular super construction unit of different-diameter is defined as regular row by the present invention respectively using the These characteristics of Meta Materials
Multiple Meta Materials elementary cells of cloth, so as to realize the superposition of three overall main absworption peaks.
2nd, dielectric layer dielectric constant is changed, thus it is possible to vary dielectric layer increases incident electromagnetic wave frequency response, dielectric constant,
Absorption frequency is reduced, and dielectric constant reduces, corresponding absorption frequency increase, therefore is superimposed with each hyperstructure unit
The dielectric layer of rule change, the dielectric layer of differing dielectric constant can also make Meta Materials that there is continuous macroscopic view to ring to incident electromagnetic wave
Should, the position for producing absworption peak in corresponding diameter dimension forms double absorption superposition, so as to widen Absorber Bandwidth.
3rd, each layer of dielectric thickness of the invention is 25nm, and compared with prior art, difference is thickness of dielectric layers
With certainty, traditional pattern that absorption is adjusted by thickness of dielectric layers, the cyclic array figure knot used are changed
Structure is circle, simple in construction, it is easy to prepared by processing.
4th, the present invention uses circular cell structure, unwise to incoming electromagnetic wave polarization with 360 degree of Central Symmetry features
Sense, and it is wide to absorb angle, it is incident at 40 ° of inclinations angle under the conditions of, absorptivity remains to reach more than 90%.
Brief description of the drawings
Fig. 1 is the structural representation of the ultra wide band absorber based on cascade structure Meta Materials；
Fig. 2 is the absorption curve of the ultra wide band absorber electromagnetic wave vertical incidence based on cascade structure Meta Materials；
Fig. 3 is the comparison diagram of the wide band absorption rate at different conditions of the ultra wide band absorber based on cascade structure Meta Materials,
Wherein ■ be embodiment one curve, ● be embodiment three curve, ▲ be example IV curve.
Embodiment
Embodiment one：As shown in figure 1, a kind of ultra wide band based on cascade structure Meta Materials of present embodiment is inhaled
Device is received by metallic plate substrate 1, first medium layer 2, the first metal layer 3, second dielectric layer 4, second metal layer 5, the 3rd dielectric layer
6th, the 3rd metal level 7, the 4th dielectric layer 8, the 4th metal level 9, the 5th dielectric layer 10, fifth metal layer 11, the 6th dielectric layer 12,
6th metal level 13, the 7th dielectric layer 14, the 7th metal level 15, the 8th dielectric layer 16, the 8th metal level 17, the 9th dielectric layer 18
Constituted with the 9th metal level 19；Metallic plate substrate 1 lies in a horizontal plane in orlop, the center of the metallic plate substrate 1 from
Be arranged in parallel down first medium layer 2, the first metal layer 3, second dielectric layer 4, second metal layer 5, the 3rd dielectric layer 6, the upwards
Three metal levels 7, the 4th dielectric layer 8, the 4th metal level 9, the 5th dielectric layer 10, fifth metal layer 11, the 6th dielectric layer the 12, the 6th
Metal level 13, the 7th dielectric layer 14, the 7th metal level 15, the 8th dielectric layer 16, the 8th metal level 17, the 9th dielectric layer 18 and
Nine metal levels 19；First medium layer 2, the first metal layer 3, second dielectric layer 4, second metal layer 5, the 3rd dielectric layer 6, the
Three metal levels 7, the 4th dielectric layer 8, the 4th metal level 9, the 5th dielectric layer 10, fifth metal layer 11, the 6th dielectric layer the 12, the 6th
Metal level 13, the 7th dielectric layer 14, the 7th metal level 15, the 8th dielectric layer 16, the 8th metal level 17, the 9th dielectric layer 18 and
Nine metal levels 19 are concentric cylinder；First medium layer 2, the first metal layer 3, second dielectric layer 4, second metal layer 5, the
Three dielectric layers 6 are identical with the basal diameter of the 3rd metal level 7；4th dielectric layer 8, the 4th metal level 9, the 5th dielectric layer
10th, fifth metal layer 11, the 6th dielectric layer 12 are identical with the basal diameter of the 6th metal level 13；7th dielectric layer 14,
Seven metal levels 15, the 8th dielectric layer 16, the 8th metal level 17, the basal diameter phase of the 9th dielectric layer 18 and the 9th metal level 19
Together；And the first medium layer 2, the first metal layer 3, second dielectric layer 4, second metal layer 5, the 3rd dielectric layer 6 and the 3rd gold medal
The basal diameter for belonging to layer 7 is more than the 4th dielectric layer 8, the 4th metal level 9, the 5th dielectric layer 10, fifth metal layer the 11, the 6th
The basal diameter of the metal level 13 of dielectric layer 12 and the 6th；4th dielectric layer 8, the 4th metal level 9, the 5th dielectric layer 10,
The basal diameter of five metal levels 11, the 6th dielectric layer 12 and the 6th metal level 13 is more than the 7th dielectric layer 14, the 7th metal
The 15, the 8th dielectric layer 16 of layer, the 8th metal level 17, the basal diameter of the 9th dielectric layer 18 and the 9th metal level 19；Described first
Dielectric layer 2, second dielectric layer 4, the 3rd dielectric layer 6, the 4th dielectric layer 8, the 5th dielectric layer 10, the 6th dielectric layer the 12, the 7th are situated between
The material of matter the 14, the 8th dielectric layer 16 of layer and the 9th dielectric layer 18 is organic high molecular polymer or inorganic ceramic material；It is described
First medium layer the 2, the 4th dielectric layer 8 and the 7th dielectric layer 14 be same organic high molecular polymer or inorganic ceramic material,
The second dielectric layer 4, the 5th dielectric layer 10 and the 8th dielectric layer 16 are same organic high molecular polymer or inorganic ceramic
Material, the 3rd dielectric layer 6, the 6th dielectric layer 12 and the 9th dielectric layer 18 are same organic high molecular polymer or inorganic
Ceramic material；The dielectric constant of first medium the 2, the 4th dielectric layer 8 of layer and the 7th dielectric layer 14 is more than the second medium
The dielectric constant of the 4, the 5th dielectric layer 10 of layer and the 8th dielectric layer 16；The second dielectric layer 4, the 5th dielectric layer 10 and the 8th are situated between
The dielectric constant of matter layer 16 is more than the dielectric constant of the 3rd dielectric layer 6, the 6th dielectric layer 12 and the 9th dielectric layer 18；It is described to be based on
The thickness of the ultra wide band absorber of cascade structure Meta Materials is 425nm.
Present embodiment use 3 × 3 cascade structure same unit by coupled between differing dielectric constant superposition with
And the coupling between different dimension cells is superimposed two kinds of mechanism collective effects, increase coupling stacked system improves Absorber Bandwidth.This
In terms of embodiment advantage is mainly reflected in three below：
1st, the physical size of Meta Materials elementary cell is changed, thus it is possible to vary sound of each metamaterial unit to incident electromagnetic wave
Should, multiple Meta Materials elementary cells are arranged according to certain rule, can make Meta Materials that there is continuous macroscopic view to ring to incident electromagnetic wave
Should, present embodiment utilizes the These characteristics of Meta Materials, and the circular super construction unit of different-diameter has been defined as into rule respectively
Multiple Meta Materials elementary cells of arrangement are restrained, so as to realize the superposition of three overall main absworption peaks.
2nd, dielectric layer dielectric constant is changed, thus it is possible to vary dielectric layer increases incident electromagnetic wave frequency response, dielectric constant,
Absorption frequency is reduced, and dielectric constant reduces, corresponding absorption frequency increase, therefore is superimposed with each hyperstructure unit
The dielectric layer of rule change, the dielectric layer of differing dielectric constant can also make Meta Materials that there is continuous macroscopic view to ring to incident electromagnetic wave
Should, the position for producing absworption peak in corresponding diameter dimension forms double absorption superposition, so as to widen Absorber Bandwidth.
3rd, each layer of dielectric thickness of present embodiment is 25nm, and difference is medium thickness compared with prior art
Degree has certainty, changes traditional pattern that absorption is adjusted by thickness of dielectric layers, the cyclic array figure used
Structure is circle, simple in construction, it is easy to prepared by processing.
4th, present embodiment uses circular cell structure, with 360 degree of Central Symmetry features, to incoming electromagnetic wave polarization not
Sensitivity, and it is wide to absorb angle, it is incident at 40 ° of inclinations angle under the conditions of, absorptivity remains to reach more than 90%.
Embodiment two：Present embodiment from unlike embodiment one：The metallic plate substrate 1,
The first metal layer 3, second metal layer 5, the 3rd metal level 7, the 4th metal level 9, fifth metal layer 11, the 6th metal level 13,
The material of seven metal levels 15, the 8th metal level 17 and the 9th metal level 19 is gold, aluminium or copper, and thickness is 20nm；The gold
It is square-shaped metal plate to belong to plate substrate 1, and its length of side is 400nm.It is arranged such, it is 0 to make transmissivity T (ω), is corresponded to actual needs.
Other steps are identical with embodiment one with parameter.
The thickness of square-shaped metal plate described in present embodiment is more than the skin depth of incident electromagnetic wave.
Present embodiment passes through meta-material absorber absorptivity calculation formula A (w)=1-R (ω)-T (ω), wherein R (ω)
It is reflectivity, T (ω) is transmissivity, reflectivity or transmissivity must be reduced in order to increase absorptivity.Due to continuous metal foil
Film thickness is more than the skin depth of incident electromagnetic wave, can stop the transmission of electromagnetic wave, therefore, in the bottom of ultra wide band absorber
One square-shaped metal plate is set, and the thickness of square-shaped metal plate is more than the skin depth of incident electromagnetic wave, makes transmissivity T (ω)
For 0.
Embodiment three：Present embodiment from unlike embodiment one or two：The first medium layer
2nd, the basal diameter of the first metal layer 3, second dielectric layer 4, second metal layer 5, the 3rd dielectric layer 6 and the 3rd metal level 7 is
175nm.Other steps are identical with parameter with embodiment one or two.
Embodiment four：Unlike one of present embodiment and embodiment one to three：Described 4th is situated between
The 8, the 4th metal level 9 of matter layer, the 5th dielectric layer 10, fifth metal layer 11, the bottom surface of the 6th dielectric layer 12 and the 6th metal level 13
A diameter of 123nm.Other steps are identical with one of embodiment one to three with parameter.
Embodiment five：Unlike one of present embodiment and embodiment one to four：Described 7th is situated between
The 14, the 7th metal level 15 of matter layer, the 8th dielectric layer 16, the 8th metal level 17, the bottom of the 9th dielectric layer 18 and the 9th metal level 19
The a diameter of 75nm in face.Other steps are identical with one of embodiment one to four with parameter.
Embodiment six：Unlike one of present embodiment and embodiment one to five：Described first is situated between
The dielectric constant of matter the 2, the 4th dielectric layer 8 of layer and the 7th dielectric layer 14 is 4.6.Other steps and parameter and embodiment
One of one to five is identical.
Embodiment seven：Unlike one of present embodiment and embodiment one to six：Described second is situated between
The dielectric constant of matter the 4, the 5th dielectric layer 10 of layer and the 8th dielectric layer 16 is 3.2.Other steps and parameter and specific embodiment party
One of formula one to six is identical.
Embodiment eight：Unlike one of present embodiment and embodiment one to seven：Described 3rd is situated between
The dielectric constant that matter the 6, the 6th dielectric layer 12 of layer and the 9th dielectric layer 18 are is 1.8.Other steps and parameter and specific implementation
One of mode one to seven is identical.
Embodiment nine：Unlike one of present embodiment and embodiment one to eight：Described first is situated between
Matter layer 2, second dielectric layer 4, the 3rd dielectric layer 6, the 4th dielectric layer 8, the 5th dielectric layer 10, the 6th dielectric layer 12, the 7th medium
The thickness of the 14, the 8th dielectric layer 16 of layer and the 9th dielectric layer 18 is 25nm.Other steps and parameter and embodiment one
It is identical to one of eight.
Embodiment ten：Unlike one of present embodiment and embodiment one to nine：It is described to be based on level
It is 284nm~1524nm to join absorption ripple wave-length coverage of the ultra wide band absorber absorptivity of structure metamaterial more than 92%.It is other
Step is identical with one of embodiment one to nine with parameter.
The absorption ripple wave-length coverage of ultra wide band absorber based on cascade structure Meta Materials described in present embodiment is 284nm
~1524nm, including three wave bands of ultraviolet, visible ray and near-infrared.
Beneficial effects of the present invention are verified using following examples：
Embodiment one, using electromagnetic field the ultra wide band absorber based on cascade structure Meta Materials is detected, in definition
Frequency is 0~1.2PHz, boundary condition be electric field along X-axis, magnetic field is along Y-axis, and electromagnetic wave vertical incidence is arrived to be surpassed based on cascade structure
The upper surface of 9th metal level 19 in the ultra wide band absorber of material；
The ultra wide band absorber based on cascade structure Meta Materials is by metallic plate substrate 1, first medium the 2, first gold medal of layer
Belong to layer 3, second dielectric layer 4, second metal layer 5, the 3rd dielectric layer 6, the 3rd metal level 7, the 4th dielectric layer 8, the 4th metal level
9th, the 5th dielectric layer 10, fifth metal layer 11, the 6th dielectric layer 12, the 6th metal level 13, the 7th dielectric layer 14, the 7th metal level
15th, the 8th dielectric layer 16, the 8th metal level 17, the 9th dielectric layer 18 and the 9th metal level 19 are constituted；Metallic plate substrate 1 is parallel to be set
Put in orlop, be arranged in parallel first medium layer 2, the first metal layer from bottom to top in the center of the metallic plate substrate 1
3rd, second dielectric layer 4, second metal layer 5, the 3rd dielectric layer 6, the 3rd metal level 7, the 4th dielectric layer 8, the 4th metal level 9,
Five dielectric layers 10, fifth metal layer 11, the 6th dielectric layer 12, the 6th metal level 13, the 7th dielectric layer 14, the 7th metal level 15,
8th dielectric layer 16, the 8th metal level 17, the 9th dielectric layer 18 and the 9th metal level 19；The 2, first metal of the first medium layer
Layer 3, second dielectric layer 4, second metal layer 5, the 3rd dielectric layer 6, the 3rd metal level 7, the 4th dielectric layer 8, the 4th metal level 9,
5th dielectric layer 10, fifth metal layer 11, the 6th dielectric layer 12, the 6th metal level 13, the 7th dielectric layer 14, the 7th metal level
15th, the 8th dielectric layer 16, the 8th metal level 17, the 9th dielectric layer 18 and the 9th metal level 19 are concentric cylinder；Described first
Dielectric layer 2, second dielectric layer 4, the 3rd dielectric layer 6, the 4th dielectric layer 8, the 5th dielectric layer 10, the 6th dielectric layer the 12, the 7th are situated between
The material of matter the 14, the 8th dielectric layer 16 of layer and the 9th dielectric layer 18 is organic high molecular polymer or inorganic ceramic material；It is described
First medium layer the 2, the 4th dielectric layer 8 and the 7th dielectric layer 14 be same organic high molecular polymer or inorganic ceramic material,
The second dielectric layer 4, the 5th dielectric layer 10 and the 8th dielectric layer 16 are same organic high molecular polymer or inorganic ceramic
Material, the 3rd dielectric layer 6, the 6th dielectric layer 12 and the 9th dielectric layer 18 are same organic high molecular polymer or inorganic
Ceramic material；The thickness of the ultra wide band absorber based on cascade structure Meta Materials is 425nm；First medium layer 2, the
One metal level 3, second dielectric layer 4, second metal layer 5, the basal diameter of the 3rd dielectric layer 6 and the 3rd metal level 7 are 175nm；
4th dielectric layer 8, the 4th metal level 9, the 5th dielectric layer 10, fifth metal layer 11, the 6th dielectric layer 12 and the 6th metal
The basal diameter of layer 13 is 123nm；7th dielectric layer 14, the 7th metal level 15, the 8th dielectric layer 16, the 8th metal level
17th, the basal diameter of the 9th dielectric layer 18 and the 9th metal level 19 is 75nm；The first medium the 2, the 4th dielectric layer 8 of layer and the
The dielectric constant of seven dielectric layers 14 is 4.6；The dielectric of the second dielectric layer 4, the 5th dielectric layer 10 and the 8th dielectric layer 16
Constant is 3.2；The dielectric constant that 3rd dielectric layer 6, the 6th dielectric layer 12 and the 9th dielectric layer 18 are is 1.8；Institute
State first medium layer 2, second dielectric layer 4, the 3rd dielectric layer 6, the 4th dielectric layer 8, the 5th dielectric layer 10, the 6th dielectric layer 12,
The thickness of 7th dielectric layer 14, the 8th dielectric layer 16 and the 9th dielectric layer 18 is 25nm.The metallic plate substrate 1, the first gold medal
Belong to layer 3, second metal layer 5, the 3rd metal level 7, the 4th metal level 9, fifth metal layer 11, the 6th metal level 13, the 7th metal
The material of the 15, the 8th metal level 17 of layer and the 9th metal level 19 is gold, aluminium or copper, and thickness is 20nm；The metallic plate lining
Bottom 1 is square-shaped metal plate, and its length of side is 400nm.
Fig. 2 is the absorption curve of the ultra wide band absorber electromagnetic wave vertical incidence based on cascade structure Meta Materials；From figure
It can be seen that wave-length coverage of the ultra wide band absorber absorptivity based on cascade structure Meta Materials more than 92% be 284nm~
1524nm, Absorber Bandwidth is 1240nm, and wherein 284nm~380nm is uv absorption spectra, and 380~780nm inhales for visible ray
Spectrum is received, 780~1524nm is near-infrared absorption spectrum.
Embodiment two：The present embodiment and the difference of embodiment one are：Boundary condition be magnetic field along X-axis, electric field is along Y
Axle, the upper surface of electromagnetic wave vertical incidence the 9th metal level 19 into the ultra wide band absorber based on cascade structure Meta Materials.Its
He is identical with embodiment one.
Wave-length coverage of the ultra wide band absorber absorptivity based on cascade structure Meta Materials more than 92% be 284nm~
1524nm, Absorber Bandwidth is 1240nm, and wherein 284nm~380nm is uv absorption spectra, and 380~780nm inhales for visible ray
Spectrum is received, 780~1524nm is near-infrared absorption spectrum.
Embodiment three：The present embodiment and the difference of embodiment one or two are：Boundary condition is electric field along X-axis, magnetic
Field is along Y-axis, and electromagnetic wave incides the 9th metal level 19 in the ultra wide band absorber based on cascade structure Meta Materials with 40 ° of inclinations angle
Upper surface.Other are identical with embodiment one or two.
The inclination angle is the angle of incidence wave direction and z-axis.
Example IV：The present embodiment and the difference of one of embodiment one to three are：Boundary condition is electric field along X
The 9th gold medal in the ultra wide band absorber based on cascade structure Meta Materials is incided with 50 ° of inclinations angle in axle, magnetic field along Y-axis, electromagnetic wave
Belong to the upper surface of layer 19.Other are identical with one of embodiment one to three.
Fig. 3 is the comparison diagram of the wide band absorption rate at different conditions of the ultra wide band absorber based on cascade structure Meta Materials,
Wherein ■ be embodiment one curve, ● be embodiment three curve, ▲ be example IV curve；Due to based on cascade structure
The ultra wide band absorber structures of Meta Materials is symmetrical, insensitive to incoming electromagnetic wave polarization, and embodiment one and embodiment two
Incidence wave is vertical incidence, so the wide band absorption rate at different conditions of the ultra wide band absorber based on cascade structure Meta Materials
Curve is same, i.e. curve ■ is also the curve of embodiment two, as can be seen from the figure when incidence wave is entered using inclination angle as 40 °
When penetrating, absorptivity is still more than 90%, with wide-angle absorption characteristic.Therefore, this meta-material absorber is in solar cell, light
There is potential application value in electric equipment and light absorbs heat emitters.
Claims (9)
1. a kind of ultra wide band absorber based on cascade structure Meta Materials, it is characterised in that the ultra-wide based on cascade structure Meta Materials
Band absorber is by metallic plate substrate (1), first medium layer (2), the first metal layer (3), second dielectric layer (4), second metal layer
(5), the 3rd dielectric layer (6), the 3rd metal level (7), the 4th dielectric layer (8), the 4th metal level (9), the 5th dielectric layer (10),
Five metal levels (11), the 6th dielectric layer (12), the 6th metal level (13), the 7th dielectric layer (14), the 7th metal level (15), the 8th
Dielectric layer (16), the 8th metal level (17), the 9th dielectric layer (18) and the 9th metal level (19) composition；Metallic plate substrate (1) water
Placing flat is in orlop, and be arranged in parallel first medium layer (2), the from bottom to top in the center of the metallic plate substrate (1)
One metal level (3), second dielectric layer (4), second metal layer (5), the 3rd dielectric layer (6), the 3rd metal level (7), the 4th medium
Layer (8), the 4th metal level (9), the 5th dielectric layer (10), fifth metal layer (11), the 6th dielectric layer (12), the 6th metal level
(13), the 7th dielectric layer (14), the 7th metal level (15), the 8th dielectric layer (16), the 8th metal level (17), the 9th dielectric layer
And the 9th metal level (19) (18)；The first medium layer (2), the first metal layer (3), second dielectric layer (4), second metal layer
(5), the 3rd dielectric layer (6), the 3rd metal level (7), the 4th dielectric layer (8), the 4th metal level (9), the 5th dielectric layer (10),
Five metal levels (11), the 6th dielectric layer (12), the 6th metal level (13), the 7th dielectric layer (14), the 7th metal level (15), the 8th
Dielectric layer (16), the 8th metal level (17), the 9th dielectric layer (18) and the 9th metal level (19) are concentric cylinder；Described first
Dielectric layer (2), the first metal layer (3), second dielectric layer (4), second metal layer (5), the 3rd dielectric layer (6) and the 3rd metal level
(7) basal diameter is identical；4th dielectric layer (8), the 4th metal level (9), the 5th dielectric layer (10), fifth metal layer
(11), the 6th dielectric layer (12) is identical with the basal diameter of the 6th metal level (13)；7th dielectric layer (14), the 7th metal
Layer (15), the 8th dielectric layer (16), the 8th metal level (17), the basal diameter of the 9th dielectric layer (18) and the 9th metal level (19)
It is identical；And the first medium layer (2), the first metal layer (3), second dielectric layer (4), second metal layer (5), the 3rd dielectric layer
(6) and the 3rd metal level (7) basal diameter be more than the 4th dielectric layer (8), the 4th metal level (9), the 5th dielectric layer
(10), the basal diameter of fifth metal layer (11), the 6th dielectric layer (12) and the 6th metal level (13)；4th dielectric layer
(8), the 4th metal level (9), the 5th dielectric layer (10), fifth metal layer (11), the 6th dielectric layer (12) and the 6th metal level
(13) basal diameter is more than the 7th dielectric layer (14), the 7th metal level (15), the 8th dielectric layer (16), the 8th metal level
(17), the basal diameter of the 9th dielectric layer (18) and the 9th metal level (19)；The first medium layer (2), second dielectric layer
(4), the 3rd dielectric layer (6), the 4th dielectric layer (8), the 5th dielectric layer (10), the 6th dielectric layer (12), the 7th dielectric layer (14),
The material of 8th dielectric layer (16) and the 9th dielectric layer (18) is organic high molecular polymer or inorganic ceramic material；Described first
Dielectric layer (2), the 4th dielectric layer (8) and the 7th dielectric layer (14) are same organic high molecular polymer or inorganic ceramic material
Material, the second dielectric layer (4), the 5th dielectric layer (10) and the 8th dielectric layer (16) for same organic high molecular polymer or
Inorganic ceramic material, the 3rd dielectric layer (6), the 6th dielectric layer (12) and the 9th dielectric layer (18) are same organic high score
Sub- polymer or inorganic ceramic material；The dielectric of the first medium layer (2), the 4th dielectric layer (8) and the 7th dielectric layer (14)
Constant is more than the dielectric constant of the second dielectric layer (4), the 5th dielectric layer (10) and the 8th dielectric layer (16)；Described second is situated between
The dielectric constant of matter layer (4), the 5th dielectric layer (10) and the 8th dielectric layer (16) is more than the 3rd dielectric layer (6), the 6th dielectric layer
(12) and the 9th dielectric layer (18) dielectric constant；The thickness of the ultra wide band absorber based on cascade structure Meta Materials is
425nm；Absorption ripple wave-length coverage of the ultra wide band absorber absorptivity based on cascade structure Meta Materials more than 92% be
284nm~1524nm.
2. a kind of ultra wide band absorber based on cascade structure Meta Materials according to claim 1, it is characterised in that described
Metallic plate substrate (1), the first metal layer (3), second metal layer (5), the 3rd metal level (7), the 4th metal level (9), hardware
The material for belonging to layer (11), the 6th metal level (13), the 7th metal level (15), the 8th metal level (17) and the 9th metal level (19) is equal
For gold, aluminium or copper, thickness is 20nm；The metallic plate substrate (1) is square-shaped metal plate, and its length of side is 400nm.
3. a kind of ultra wide band absorber based on cascade structure Meta Materials according to claim 1, it is characterised in that described
First medium layer (2), the first metal layer (3), second dielectric layer (4), second metal layer (5), the 3rd dielectric layer (6) and the 3rd gold medal
The basal diameter for belonging to layer (7) is 175nm.
4. a kind of ultra wide band absorber based on cascade structure Meta Materials according to claim 1, it is characterised in that described
4th dielectric layer (8), the 4th metal level (9), the 5th dielectric layer (10), fifth metal layer (11), the 6th dielectric layer (12) and
The basal diameter of six metal levels (13) is 123nm.
5. a kind of ultra wide band absorber based on cascade structure Meta Materials according to claim 1, it is characterised in that described
7th dielectric layer (14), the 7th metal level (15), the 8th dielectric layer (16), the 8th metal level (17), the 9th dielectric layer (18) and
The basal diameter of 9th metal level (19) is 75nm.
6. a kind of ultra wide band absorber based on cascade structure Meta Materials according to claim 1, it is characterised in that described
The dielectric constant of first medium layer (2), the 4th dielectric layer (8) and the 7th dielectric layer (14) is 4.6.
7. a kind of ultra wide band absorber based on cascade structure Meta Materials according to claim 1, it is characterised in that described
The dielectric constant of second dielectric layer (4), the 5th dielectric layer (10) and the 8th dielectric layer (16) is 3.2.
8. a kind of ultra wide band absorber based on cascade structure Meta Materials according to claim 1, it is characterised in that described
The dielectric constant that 3rd dielectric layer (6), the 6th dielectric layer (12) and the 9th dielectric layer (18) are is 1.8.
9. a kind of ultra wide band absorber based on cascade structure Meta Materials according to claim 1, it is characterised in that described
First medium layer (2), second dielectric layer (4), the 3rd dielectric layer (6), the 4th dielectric layer (8), the 5th dielectric layer (10), the 6th are situated between
Matter layer (12), the 7th dielectric layer (14), the thickness of the 8th dielectric layer (16) and the 9th dielectric layer (18) are 25nm.
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