CN112490678B - VO-based2Broadband terahertz super-surface absorption unit and super-surface absorber - Google Patents
VO-based2Broadband terahertz super-surface absorption unit and super-surface absorber Download PDFInfo
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- 239000002184 metal Substances 0.000 claims abstract description 46
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 7
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 7
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 239000010949 copper Substances 0.000 claims description 6
- 229910052737 gold Inorganic materials 0.000 claims description 6
- 239000010931 gold Substances 0.000 claims description 6
- 239000012811 non-conductive material Substances 0.000 claims description 5
- 239000004642 Polyimide Substances 0.000 claims description 4
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 claims description 4
- 229920001721 polyimide Polymers 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
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- 239000004065 semiconductor Substances 0.000 description 9
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- 238000009659 non-destructive testing Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 229910021542 Vanadium(IV) oxide Inorganic materials 0.000 description 1
- 239000003463 adsorbent Substances 0.000 description 1
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- 239000011889 copper foil Substances 0.000 description 1
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- GRUMUEUJTSXQOI-UHFFFAOYSA-N vanadium dioxide Chemical compound O=[V]=O GRUMUEUJTSXQOI-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
- H01Q15/0006—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
- H01Q15/0086—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices having materials with a synthesized negative refractive index, e.g. metamaterials or left-handed materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q17/00—Devices for absorbing waves radiated from an antenna; Combinations of such devices with active antenna elements or systems
- H01Q17/007—Devices for absorbing waves radiated from an antenna; Combinations of such devices with active antenna elements or systems with means for controlling the absorption
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Abstract
The invention discloses a method based on VO2The broadband terahertz super-surface absorption unit and the super-surface absorber are arranged on the surface of the substrate; the super surface absorption unit includes: the terahertz wave total reflection layer comprises a metal resonance layer, a dielectric layer and a terahertz wave total reflection layer; the metal resonance layer is positioned on the upper surface of the dielectric layer, and the terahertz wave total reflection layer is positioned on the lower surface of the dielectric layer; the metal resonance layer includes: the metal patch comprises a positive cross-shaped metal patch etched with a positive cross-shaped gap, wherein two mutually perpendicular linear gaps of the positive cross-shaped gap are respectively superposed with two central lines of the positive cross-shaped metal patch; VO is embedded in both ends of the linear gap2A material. The invention can improve the bandwidth and the absorptivity of the terahertz super-surface absorber without increasing the design complexity and the preparation difficulty of the terahertz super-surface absorber.
Description
Technical Field
The invention belongs to the field of electromagnetic waves and novel artificial electromagnetic materials, and particularly relates to a VO (volatile organic compounds) -based artificial electromagnetic material2The broadband terahertz super-surface absorption unit and the absorber.
Background
Due to the unique properties of the terahertz wave, the terahertz wave has wide application prospects in numerous fields of biomedicine, nondestructive testing, material science, environmental monitoring, safety inspection, information communication, astronomy and the like. Therefore, how to artificially regulate and control terahertz waves so that terahertz waves can be successfully applied to various fields becomes a focus of research.
The super surface is also called as a super-structure surface, and is an artificial material formed by periodically arranging sub-wavelength micro-structure units in a two-dimensional direction; by designing the shape, size and arrangement of the microstructure units, the microstructure units can exhibit electromagnetic properties, such as negative refractive index, negative magnetic permeability and negative dielectric constant, which are not possessed by natural materials at specific frequencies.
Vanadium dioxide VO2The material is a phase-change material, and has reversible metal state, i.e. semiconductor state phase change, and material before and after phase change under the drive of external fields such as heat, electricity, light and the likeThe conductivity of the material can vary significantly. VO at temperature T =300K2Exhibits a semiconducting state, in which the electrical conductivity is comparable to that of conventional semiconducting materials; VO when the temperature rises to 350K2Exhibiting a metallic state where the conductivity is four to five orders of magnitude changed from that of the semiconductor state.
In recent years, terahertz super-surface absorbers have attracted extensive research attention as terahertz wave modulating devices. However, most of the existing terahertz super-surface absorbers have the problems of narrow bandwidth and burr absorption peak; and the microstructure unit of the existing terahertz super-surface absorber is generally complex in structure and high in processing difficulty. For example, the document "A switching polarization-independent THz adsorbent using a phase change material" discloses the use of a phase change material VO2The broadband adjustable polarization-insensitive terahertz absorber is a VO absorber2In the metallic state, the systemic yield is higher than 90% in the range of 10.28-15.56THz, but when VO is present2In the semiconductor state, there are a plurality of spike absorption peaks, with an absorptance of five spike absorption peaks exceeding 90%. Document "A broadband and switchcable VO2VO-based VO disclosed in "based on a mounted perfect absorber at the THz frequency2In the broadband adjustable terahertz frequency band perfect absorber, each microstructure unit is formed by mutually superposing three layers of absorption structures formed by two resonance layers of I-shaped structures with different sizes, wherein the resonance layer and the reflection layer of one three-layer absorption structure are formed by VO2And (4) forming. The absorber has an absorption bandwidth of less than 0.2THz over 90%. In addition, due to the superposition of three-dimensional structures, the total number of the microstructure units is six, so that not only is the structure loaded, but also the I-shaped resonance layer is adopted, so that the absorption unit is sensitive to polarization.
Disclosure of Invention
In order to improve the bandwidth and the absorptivity of the terahertz super-surface absorber and not increase the design and preparation difficulty of the terahertz super-surface absorber, the invention provides a VO (volatile organic compound) -based super-surface absorber2The broadband terahertz super-surface absorption unit.
The technical problem to be solved by the invention is realized by the following technical scheme:
in a first aspect, the invention provides a VO-based system2The broadband terahertz super-surface absorption unit comprises: the terahertz wave total reflection layer comprises a metal resonance layer, a dielectric layer and a terahertz wave total reflection layer; the metal resonance layer is positioned on the upper surface of the dielectric layer, and the terahertz wave total reflection layer is positioned on the lower surface of the dielectric layer;
the metal resonance layer includes: the metal patch comprises a positive cross-shaped metal patch etched with a positive cross-shaped gap, wherein two mutually perpendicular linear gaps of the positive cross-shaped gap are respectively superposed with two central lines of the positive cross-shaped metal patch; VO is embedded in both ends of the linear gap2A material.
Preferably, the cross section of the linear gap is rectangular, and the VO2The material is in a rectangular structure.
Preferably, the VO is embedded in two ends of the linear gap respectively2The thickness of the material is 0.2-2 μm, and the length of the material is 40-75% of the half length of the linear gap.
Preferably, the outer end edge of the regular cross-shaped metal patch does not exceed the edge of the dielectric layer, and the distance between the outer end edge of the regular cross-shaped metal patch and the edge of the dielectric layer is not less than 1 μm.
Preferably, the material of the metal patch in the shape of a regular cross includes: gold or copper.
Preferably, the dielectric layer is made of a non-conductive material with a dielectric constant between (2, 4) and an electric loss tangent of less than 0.01.
Preferably, the non-conductive material comprises: polyimide or benzocyclobutene BCB.
Preferably, the material of the terahertz wave total reflection layer includes: gold, copper or aluminum.
Preferably, the thickness of the terahertz wave total reflection layer is 0.2 to 2 μm.
In a second aspect, the invention provides a VO-based system2The broadband terahertz super-surface absorber comprises: a plurality of super surface absorbing units arranged in a matrix, the super surface absorbing units being VO-based according to any one of claims 1-92The broadband terahertz super-surface absorption unit.
The VO-based system provided by the invention2In the broadband terahertz super-surface absorption unit, the structure of the metal resonance layer has rotational symmetry, so the broadband terahertz super-surface absorption unit is insensitive to polarization of incident terahertz waves. Based on the metal resonance layer, the VO provided by the invention is based on the magnetic resonance formed by the induced current and the electric resonance formed by the coupling of the incident electromagnetic wave and the structural gap2The broadband terahertz super-surface absorption unit is arranged at VO2The absorption rate can be more than 98% at most when the material is in a metal state, the absorption rate can reach more than 90% in a broadband range of 4.8-5.55THz, and the material is VO2The absorption in the semiconductor state does not exceed 50%. Therefore, the VO-based system provided by the invention2The broadband terahertz super-surface absorption unit has high absorption rate and has the absorption characteristic of wide incident angle.
In addition, the VO-based system provided by the invention2The broadband terahertz super-surface absorption unit has a simple structure, and only VO embedded in two ends of a linear gap needs to be changed2The length of the material can conveniently adjust the absorption degree of the super-surface absorption unit to the incident terahertz waves. Therefore, the VO-based system provided by the invention2The broadband terahertz super-surface absorption unit also has the characteristics of flexibility and adjustability. In addition, the VO-based system provided by the invention2The preparation difficulty of the broadband terahertz super-surface absorption unit is low.
The present invention will be described in further detail with reference to the accompanying drawings.
Drawings
FIG. 1 is a VO-based system provided by an embodiment of the present invention2The perspective view of the broadband terahertz super-surface absorption unit;
FIG. 2 is a top view of FIG. 1;
FIG. 3 is a side view of FIG. 1;
FIG. 4 is a VO-based system provided by an embodiment of the present invention2The structural schematic diagram of the broadband terahertz super-surface absorber is shown;
FIG. 5 is the VO-based data shown in FIG. 42Broadband terahertz super surfaceAbsorption spectrum of the absorber;
FIG. 6 is the VO-based data shown in FIG. 42The broadband terahertz super-surface absorber is VO at T =350K2The material being of different lengths l2A temporal absorption spectrum;
FIG. 7 is the VO-based data shown in FIG. 42The absorption spectrum of the broadband terahertz super-surface absorber is shown when T =350K and the polarization incident angle is changed;
FIG. 8 is the VO-based data shown in FIG. 42The absorption spectrum of the broadband terahertz super-surface absorber is shown when the polarization incidence angle is changed in a transverse electric wave TE mode with T = 350K;
FIG. 9 is the VO-based data shown in FIG. 42The absorption spectrum of the broadband terahertz super-surface absorber in T =350K and when the polarization incidence angle is changed in a transverse magnetic wave (TM) mode.
Detailed Description
The present invention will be described in further detail with reference to specific examples, but the embodiments of the present invention are not limited thereto.
In order to improve the bandwidth and the absorptivity of the terahertz super-surface absorber and not increase the design complexity and the preparation difficulty of the terahertz super-surface absorber, the embodiment of the invention provides a VO-based terahertz super-surface absorber2As shown in fig. 1, the broadband terahertz super-surface absorption unit includes: the terahertz wave total reflection layer comprises a metal resonance layer 1, a dielectric layer 2 and a terahertz wave total reflection layer 3; the metal resonance layer 1 is located on the upper surface of the dielectric layer 2, and the terahertz wave total reflection layer 3 is located on the lower surface of the dielectric layer 2.
As shown in fig. 1, the metal resonance layer 1 includes: a regular cross-shaped metal patch 101 etched with a regular cross-shaped gap, wherein two mutually perpendicular linear gaps of the regular cross-shaped gap are respectively superposed with two central lines of the regular cross-shaped metal patch; VO is embedded in both ends of the two linear gaps2A material 102.
In the embodiment of the invention, VO can be controlled by controlling the change of temperature2Phase transition of the material, VO when T =300K2The material is in a semiconductor state, VO at this time2The conductivity of the material is 1 siemens per meter; when T =350At K, VO2The material is in a metallic state, VO2The conductivity of the material is 2 x 105Siemens per meter.
Preferably, the cross section of the linear slit is rectangular; correspondingly, VO embedded in two ends of the linear gap2Material 102 is in a rectangular configuration. Of course, the cross section of the linear gap can be in various structures such as a semicircle, a trapezoid and the like, and VO2The specific shape of the material is set to fit the shape of the cross section of the linear slit, and the embodiment of the invention is not listed.
VO-based system provided by embodiment of the invention2In the broadband terahertz super-surface absorption unit of (1), the structure of the metal resonance layer 1 has rotational symmetry, so that the unit is insensitive to polarization of incident terahertz waves. Based on the metal resonance layer 1, the VO provided by the invention is based on the magnetic resonance formed by the induced current and the electric resonance formed by the coupling of the incident electromagnetic wave and the structural gap2The broadband terahertz super-surface absorption unit is arranged at VO2The absorption rate can be more than 98% at most when the material is in a metal state, the absorption rate can reach more than 90% in a broadband range of 4.8-5.55THz, and the material is VO2The absorption in the semiconductor state does not exceed 50%. Therefore, the VO provided by the embodiment of the invention2The broadband terahertz super-surface absorption unit has high absorption rate and has the absorption characteristic of wide incident angle.
In addition, the VO provided by the embodiment of the invention2The broadband terahertz super-surface absorption unit has a simple structure, and only VO embedded in two ends of a linear gap needs to be changed2The length of the material can conveniently adjust the absorption degree of the super-surface absorption unit to the incident terahertz waves. Therefore, the VO-based system provided by the invention2The broadband terahertz super-surface absorption unit also has the characteristics of flexibility and adjustability. In addition, the VO-based system provided by the invention2The preparation difficulty of the broadband terahertz super-surface absorption unit is low.
Preferably, VOs respectively embedded at both ends of the linear slit2The thickness of the material 102 is 0.2-2 μm, and the length thereofAll account for 40% -75% of the half length of the linear gap.
Preferably, the outer end edge of the positive cross-shaped metal patch does not exceed the edge of the dielectric layer 2, and the distance between the outer end edge of the positive cross-shaped metal patch and the edge of the dielectric layer 2 is not less than 1 μm. Thus, when the super surface absorption units are periodically arranged together to form the super surface absorption body, the metal resonance layers 1 of the adjacent super surface absorption units are kept with a space and cannot interfere with each other. Of course, the outer end edge of the regular cross-shaped metal patch may also be flush with the edge of the dielectric layer 2, in case a certain distance is left between adjacent super surface absorbent units on the super surface absorbent body.
Preferably, the metal patch in the shape of a regular cross in the metal resonance layer 1 may be made of gold or copper, that is, the metal patch in the shape of a regular cross may be made of gold foil or copper foil.
Preferably, the dielectric layer 2 may be made of a non-conductive material having a dielectric constant between (2, 4) and an electric loss tangent of less than 0.01. For example, polyimide or benzocyclobutene BCB, and the like.
The polyimide had a relative dielectric constant of 3.5 and an electric loss tangent of 0.008. Benzocyclobutene BCB has a relative dielectric constant of 2.6 and an electric loss tangent of 0.0005.
Preferably, the material of the terahertz wave total reflection layer 3 includes: gold, copper or aluminum, although not limited thereto.
Preferably, the thickness of the terahertz wave total reflection layer 3 may be 0.2 μm to 2 μm.
In addition, the embodiment of the invention does not limit the specific shapes and sizes of the dielectric layer 2 and the terahertz wave total reflection layer 3.
FIGS. 2 and 3 show an exemplary VO-based system2Fig. 2 is a top view of the super-surface absorption unit, and fig. 3 is a side view of the super-surface absorption unit. As shown in FIGS. 2 and 3, the structural parameters of the super surface absorbent unit include: l1＝10.5μm， l2＝5.5μm，w1＝3.0μm，w2＝1.0μm，t1＝0.2μm，t2=11 μm and p =30 μm. It should be noted that the structural parameters of the super surface absorption unit shown here are only examples and are not meant to limit the embodiments of the present invention.
VO based on the above2The embodiment of the invention also provides a VO-based super-surface absorption unit with a broadband terahertz wave2The broadband terahertz super-surface absorber comprises: a plurality of super surface absorption units arranged in a matrix, wherein the super surface absorption unit can be VO-based provided by any one of the above embodiments2The broadband terahertz super-surface absorption unit.
In practical application, the VO provided by the embodiment of the invention is based on2The broadband terahertz super-surface absorber can be applied to numerous fields of biomedicine, nondestructive testing, material science, environmental monitoring, safety inspection, information communication, astronomy and the like.
FIG. 4 is a diagram exemplarily showing a VO-based system2The broadband terahertz super-surface absorber. It will be appreciated that the actual super surface absorbent body comprises a very large number of super surface absorbent units, and for clarity of the drawing only 6 x 6 super surface absorbent units are shown in fig. 4.
VO-based data shown in FIG. 42The broadband terahertz super-surface absorber is simulated, and the simulation result is shown in fig. 5 to 9. In the simulation, the structural parameters of each super-surface absorption unit in the super-surface absorber are as follows: l1＝10.5μm，l2＝5.5μm，w1＝3.0μm，w2＝1.0μm，t1＝0.2μm，t2＝11μm， p＝30μm。
FIG. 5 is VO2The absorption spectrum of the super surface absorber is respectively in a semiconductor state and a metal state. It can be seen that VO is at temperature T =300K2The material is in a semiconductor state, the conductivity is extremely low, the intrinsic absorptivity of the absorber cannot be influenced, and only one absorption peak with absorptivity not more than 50% is located at 5.25 THz. When T =350K, VO at this time2The material is in a metallic state, VO2The steep increase in electrical conductivity results in an absorberThe absorption rate is greatly increased, the highest absorption rate exceeds 98 percent, and the absorption rate reaches more than 90 percent in a broadband range of 4.8-5.55 THz.
FIG. 6 shows VO at T =350K2When the material is in a metallic state, VO2The material being of different lengths l2The absorption spectrum of the super surface absorber. It can be seen that VO is embedded in linear gap2Length l of material2Increased from 5.5 μm to 10 μm, i.e. VO2The proportion of the length of the material in half the length of the linear slits increases from 40% to 74%, the absorption of the super-surface absorber decreasing. It can be seen that by changing VO embedded in the linear gap2Due to the length of the material, different degrees of absorption of incident terahertz waves can be realized.
Fig. 7 shows the absorption spectra of the super-surface absorber at different polarization angles of incidence for T = 350K. It can be seen that the absorption of the super-surface absorber changes little with increasing polarization angle from 0 ° to 90 °, being polarization insensitive to incident electromagnetic waves.
In FIG. 8, T =350K, i.e., VO2When the material is in a metal state, the absorption spectrum of the super-surface absorber is obtained when terahertz waves of a transverse electric wave TE mode are incident at different incidence angles. As can be seen from fig. 8, the absorption bandwidth of the super-surface absorber becomes narrower as the incident angle in the TE mode increases, but the absorption still exceeds 80% at an incident angle of less than 80 °.
FIG. 9 shows a case where T =350K, i.e., VO2When the material is in a metal state, the absorption spectrum of the super-surface absorber is obtained when terahertz waves in a transverse magnetic wave (TM) mode are incident at different incidence angles. As can be seen from fig. 9, the absorption rate of the present super surface absorber gradually decreases as the incident angle increases in the TM mode, and the absorption rate is still 80% or more in the wide band range when the incident angle is less than 40 °.
Comparing fig. 8 and fig. 9, it can be seen that the VO-based device provided by the embodiment of the invention2The broadband terahertz super-surface absorber has wide incident angle absorption characteristics, and for the same absorption rate, the incident angle in a TE mode is larger than the incident angle in a TM modeAnd (4) degree.
In the description of the specification, reference to the description of the term "one embodiment", "some embodiments", "an example", "a specific example", or "some examples", etc., means that a particular feature or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above are not necessarily intended to refer to the same embodiment or example. Furthermore, the particular features or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, various embodiments or examples described in this specification can be combined and combined by those skilled in the art.
While the present application has been described in connection with various embodiments, other variations to the disclosed embodiments can be understood and effected by those skilled in the art in practicing the claimed application, from a review of the drawings, the disclosure, and the appended claims.
The foregoing is a more detailed description of the invention in connection with specific preferred embodiments and it is not intended that the invention be limited to these specific details. For those skilled in the art to which the invention pertains, several simple deductions or substitutions can be made without departing from the spirit of the invention, and all shall be considered as belonging to the protection scope of the invention.
Claims (10)
1. Based on VO2The broadband terahertz super-surface absorption unit is characterized by comprising: the terahertz wave total reflection layer comprises a metal resonance layer, a dielectric layer and a terahertz wave total reflection layer; the metal resonance layer is positioned on the upper surface of the dielectric layer, and the terahertz wave total reflection layer is positioned on the lower surface of the dielectric layer;
the metal resonance layer includes: etching a regular cross-shaped metal patch with a regular cross-shaped gap, wherein two mutually perpendicular linear gaps of the regular cross-shaped gap are respectively superposed with two central lines of the regular cross-shaped metal patch; VO is embedded in both ends of the linear gap2A material.
2. VO-based according to claim 12The broadband terahertz super-surface absorption unit is characterized in that the cross section of the linear gap is rectangular, and the VO is2The material is in a rectangular structure.
3. VO-based according to claim 22The broadband terahertz super-surface absorption unit is characterized in that VO embedded into two ends of the linear gap respectively2The thickness of the material is 0.2-2 μm, and the length of the material is 40-75% of the half length of the linear gap.
4. VO-based according to claim 12The broadband terahertz super-surface absorption unit is characterized in that the edge of the outer end of the regular cross-shaped metal patch does not exceed the edge of the dielectric layer, and the distance between the edge of the regular cross-shaped metal patch and the edge of the dielectric layer is not less than 1 mu m.
5. VO-based according to claim 12The broadband terahertz super surface absorption unit is characterized in that the material of positive cross-shaped metal patch includes: gold or copper.
6. VO-based according to claim 12The broadband terahertz super-surface absorption unit is characterized in that the dielectric layer is made of a non-conductive material with the dielectric constant of (2, 4) and the electric loss tangent of less than 0.01.
7. VO-based according to claim 62The broadband terahertz super-surface absorption unit is characterized in that the non-conductive material comprises: polyimide or benzocyclobutene BCB.
8. VO-based according to claim 12The broadband terahertz super-surface absorption unit is characterized in that the material package of the terahertz wave total reflection layerComprises the following steps: gold, copper or aluminum.
9. VO-based according to claim 82The broadband terahertz super-surface absorption unit is characterized in that the thickness of the terahertz wave total reflection layer is 0.2-2 microns.
10. Based on VO2The broadband terahertz super surface absorber is characterized by comprising: a plurality of super surface absorbing units arranged in a matrix, the super surface absorbing units being VO-based according to any one of claims 1-92The metal resonance layers of the adjacent super-surface absorption units have a distance.
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| CN113054440B (en) * | 2021-03-18 | 2022-03-29 | 四川大学 | Double-control broadband THz absorber based on vanadium dioxide and graphene |
| CN114421159B (en) * | 2022-01-25 | 2023-03-21 | 电子科技大学长三角研究院(湖州) | Terahertz digital light-operated coding reflective array |
| CN114976534B (en) * | 2022-05-31 | 2024-05-17 | 合肥工业大学 | Terahertz reflection type phase shifter |
| CN115000724B (en) * | 2022-07-29 | 2022-10-25 | 浙江科技学院 | Tunable ultra-wideband terahertz absorber based on vanadium dioxide |
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| CN105896098A (en) * | 2016-04-25 | 2016-08-24 | 中国工程物理研究院激光聚变研究中心 | Broadband THz metamaterial absorber based on multi-resonant absorption superposition |
| CN107942418A (en) * | 2017-11-14 | 2018-04-20 | 郑州大学 | It is a kind of based on the Terahertz dual-band absorber of cross grapheme material and its application |
| CN109037958A (en) * | 2018-07-24 | 2018-12-18 | 山西大学 | A kind of tunable THz wave meta-material absorber of mono-/bis-frequency range |
| CN211265718U (en) * | 2019-10-29 | 2020-08-14 | 南京邮电大学 | VO-based2Super-surface dual-function device for realizing polarization conversion and wave absorption |
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