CN107942418A - It is a kind of based on the Terahertz dual-band absorber of cross grapheme material and its application - Google Patents
It is a kind of based on the Terahertz dual-band absorber of cross grapheme material and its application Download PDFInfo
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Abstract
The present invention discloses a kind of Terahertz dual-band absorber based on cross grapheme material, including the metallic reflector, dielectric layer and patterned layer set gradually from top to bottom, the patterned layer in the cross material structure unit of periodic arrangement by forming, each cross material structure unit is formed by orthogonal horizontal stripes and vertical band connection, horizontal stripes and belt are made by graphene, the lattice period d of the cross material structure unit is 35 μm, and the wide a of each horizontal stripes and belt is 0.6 1 μm, long b is 1.2 2 μm.There is provided its application at the same time.The absorber graphic structure of the present invention is simple, it is not necessary to multilayer material stacks and multiple resonators, be easily integrated, stability it is good, there is special electromagnetic response, and there is high-absorbility, high sensitivity and flexible modulation.
Description
Technical field
The invention belongs to Meta Materials and function solenoid technical field, and in particular to a kind of based on cross grapheme material
Terahertz dual-band absorber and its application.
Background technology
THz wave typically refers to electromagnetic wave of the frequency in the range of 0.1THz~10THz, from frequency, the wave band position
Between millimeter wave and infrared ray, belong to far infrared band；From energy, between electronics and photon.For a long time, due to
Lack the result of study and data to terahertz wave band, understanding of the people to this section of ripple is very few, and " Terahertz is empty so that foring
Phenomenon in vain ".Since THz wave is in special area of the electronics to photonic propulsion transition, THz wave has very much
Unique property, such as broadband property, transient state, low energy, coherence.The research of THz wave is directed to physics, photoelectron
The field such as and material science, it is in imaging, medical diagnosis, environmental science, information, national security and basic physics research field
Have broad application prospects and application value.
Electromagnetism Meta Materials refer to a kind of artificial composite structure with the extraordinary electromagnetic property not available for natural material or
Composite material, its characteristic are, can be realized by being optimized to the physical size of artificial structure's unit to electromagnetic wave
It is special so as to fulfill extraordinary electromagnetism such as electromagnetically induced is transparent, perfect lens, negative indexes with any regulation and control of light wave performance
Property, the Meta Materials device of terahertz wave band has very big application potential in fields such as sensing, imaging, electromagnetism stealths, to future
The development of society will have a huge impact, and the research to Terahertz Meta Materials device has evolved into countries in the world
One new science and technology development strategy point.However, due to resonance characteristic, this meta-material absorber is usually operated at single frequency band, and
It is mostly narrow-band absorption.Some broad band absorbers based on sandwich construction or multiple resonators, structure is again complex, moreover,
The working region of these absorbers has polarization correlated in far-infrared band, and which prevent their potential application.
The content of the invention
Present invention aims at a kind of Terahertz dual-band absorber based on cross grapheme material is provided, carry at the same time
It is another goal of the invention of the present invention for its application.
Based on above-mentioned purpose, the present invention takes following technical scheme：
A kind of Terahertz dual-band absorber based on cross grapheme material, including the gold set gradually from top to bottom
It is described by being formed in the cross material structure unit of periodic arrangement to belong to reflecting layer, dielectric layer and patterned layer, the patterned layer
Each cross material structure unit is formed by orthogonal horizontal stripes and vertical band connection, horizontal stripes and belt by
Graphene is made, and the lattice period d of the cross material structure unit is 3-5 μm, and the wide a of each horizontal stripes and belt is
0.6-1 μm, long b be 1.2-2 μm.
The thickness of the patterned layer is 1nm.
The metallic reflector is metallic film made of the metal material of high conductivity, the thickness of metallic reflector
For 300 μm of 200-.
The metal material is gold, silver, aluminium or copper.
The dielectric constant of the dielectric layer is 3-5, and the thickness of dielectric layer is 3-5 μm.
The dielectric layer is silica membrane.
The application of Terahertz dual-band absorber based on cross grapheme material, the absorber are applied to electromagnetic wave
Sensing, optically filtering and detection device.
Compared with prior art, the invention has the advantages that：
1) absorber of the invention is simple with graphic structure, it is not necessary to which multilayer material stacks and multiple resonators, easily
In it is integrated, stability is good, has special electromagnetic response, and have the characteristics that high-absorbility, high sensitivity and flexible modulation, pass through
Regulate and control different graphene Fermi energy, the position of absworption peak can be controlled, and the position of absworption peak and absorption intensity be not with incidence
The polarization direction of light changes and changes；By varying the refractive index of dielectric layer, obvious blue shift occurs in absworption peak, passes through
Calculate FOM maximums and can reach 15.35, available for the sensing of electromagnetic wave, optically filtering and detection device；
2) absorber of the invention, there is more controllable condition, is easy to find with specific absorption frequency, specific response
The Meta Materials of frequency band, specific structure thickness, have broad application prospects in optical sensing, filtering and detection device.
Brief description of the drawings
Fig. 1 is the overall structure diagram of absorber of the present invention；
Fig. 2 is cross material structure cell schematics in Fig. 1；
Fig. 3 is that the numerical simulation of absorber of the present invention absorbs spectrogram；
Fig. 4 is the electric field strength and surface current distribution at absorber resonant frequency of the present invention, and (a) and (c) is resonance
Electric field strength and surface current distribution at frequency 1, (b) and (d) are the electric field strength and surface current point at resonant frequency 2
Butut；
Fig. 5 is the absorption spectra of absorber unit of the present invention with the trend chart of aspect ratio；
Fig. 6 is the absorption spectra of absorber unit of the present invention with the trend chart of polarization direction；
Fig. 7 is the absorption spectra of absorber unit of the present invention with the trend chart of graphene Fermi energy；
Fig. 8 is the absorption spectra of absorber unit of the present invention with the trend chart of dielectric layer refractive index.
Embodiment
Embodiment 1
A kind of Terahertz dual-band absorber based on cross grapheme material, structure as shown in Figs. 1-3, including under
To the metallic reflector 1, dielectric layer 2 and patterned layer 3 above set gradually, the metallic reflector 1 is the metal by high conductivity
(electrical conductivity is 4.7 × 10 to material7S/m the metallic film made of), the thickness of metallic reflector 1 is 200 μm, the metal
Material is gold；The dielectric constant of dielectric layer 2 is 3.9, and the thickness of dielectric layer 2 is 3.3 μm, and the dielectric layer 2 is thin for silica
Film；For the patterned layer 3 by being formed in the cross material structure unit of periodic arrangement, the thickness of the patterned layer 3 is 1nm,
Each cross material structure unit is formed by orthogonal horizontal stripes and vertical band connection, horizontal stripes and belt by
Graphene is made, and the lattice period d of the cross material structure unit is 3 μm, and the wide a of each horizontal stripes and belt is
0.6 μm, long b be 2 μm.
The electrical conductivity of graphene uses the face internal conductance rate form of Drude modelsWherein, EF
For Fermi's energy of graphene, the inherent relaxation time is τ=μ EF/eνF 2, Fermi velocity νF=106M/s, μ are the current-carrying of graphene
Transport factor.
The application of Terahertz dual-band absorber based on cross grapheme material, the absorber are applied to electromagnetic wave
Sensing, optically filtering and detection device.
Embodiment 2
A kind of Terahertz dual-band absorber based on cross grapheme material, structure as shown in Figs. 1-3, including under
To the metallic reflector 1, dielectric layer 2 and patterned layer 3 above set gradually, the metallic reflector 1 is the metal by high conductivity
Metallic film made of material, the thickness of metallic reflector 1 is 230 μm, and the metal material is silver；The dielectric of dielectric layer 2
Constant is 3.9, and the thickness of dielectric layer 2 is 3 μm, and the dielectric layer 2 is silica membrane；The patterned layer 3 is by periodically
The cross material structure unit composition of arrangement, the thickness of the patterned layer 3 is 1nm, and each cross material structure unit is equal
It is made of orthogonal horizontal stripes and vertical band connection, horizontal stripes and belt are made by graphene, the cross section bar
The lattice period d for expecting construction unit is 5 μm, and the wide a of each horizontal stripes and belt is 0.8 μm, long b is 1.4 μm.
Other are the same as embodiment 1.
Embodiment 3
A kind of Terahertz dual-band absorber based on cross grapheme material, structure as shown in Figs. 1-2, including under
To the metallic reflector 1, dielectric layer 2 and patterned layer 3 above set gradually, the metallic reflector 1 is the metal by high conductivity
Metallic film made of material, the thickness of metallic reflector 1 is 250 μm, and the metal material is aluminium；The dielectric of dielectric layer 2
Constant is 3.9, and the thickness of dielectric layer 2 is 5 μm, and the dielectric layer 2 is silica membrane；The patterned layer 3 is by periodically
The cross material structure unit composition of arrangement, the thickness of the patterned layer 3 is 1nm, and each cross material structure unit is equal
It is made of orthogonal horizontal stripes and vertical band connection, horizontal stripes and belt are made by graphene, the cross section bar
The lattice period d for expecting construction unit is 4 μm, and the wide a of each horizontal stripes and belt is 1 μm, long b is 1.8 μm.
Other are the same as embodiment 1.
Embodiment 4
A kind of Terahertz dual-band absorber based on cross grapheme material, structure as shown in Figs. 1-2, including under
To the metallic reflector 1, dielectric layer 2 and patterned layer 3 above set gradually, the metallic reflector 1 is the metal by high conductivity
Metallic film made of material, the thickness of metallic reflector 1 is 300 μm, and the metal material is copper；The dielectric of dielectric layer 2
Constant is 3.9, and the thickness of dielectric layer 2 is 3.5 μm, and the dielectric layer 2 is silica membrane；The patterned layer 3 is by the cycle
Property arrangement cross material structure unit composition, the thickness of the patterned layer 3 is 1nm, each cross material structure unit
Formed by orthogonal horizontal stripes and vertical band connection, horizontal stripes and belt are made by graphene, described cross
The lattice period d of material structure unit is 3.5 μm, and the wide a of each horizontal stripes and belt is 0.7 μm, long b is 2 μm.
Other are the same as embodiment 1.
Embodiment 5-7
In embodiment 5-7, horizontal stripes and the size of belt respectively are in each example：Wide a is 0.6 μ
M, long b is 2 μm；Wide a is 0.6 μm, long b is 1.5 μm；Wide a is 0.6 μm, long b is 1.2 μm.Other are the same as embodiment 1.Embodiment 8
Simulation calculates
The data of embodiment 1 are carried out using three-dimensional finite element multiple physical field simulation software COMSOL Multiphysics
Calculate.During simulation, only by taking a cross material structure unit as an example.By x, y direction set periodic boundary condition come
The infinitely great array structure of simulation.Plane electromagnetic wave is incident perpendicular to body structure surface, electric field, magnetic field polarization direction respectively along x-axis,
Y-axis, periodic boundary condition is used in x, y-axis direction, and z directions are eliminated in the non-physical anti-of boundary using perfect domination set
Penetrate, carry out mesh generation and be arranged to especially refine, carry out frequency domain scanning and calculate transmission, reflectivity with the variation relation of frequency, inhale
The numerical simulation absorption spectra of device is received as shown in figure 3, so as to obtain absorption spectra A=1-T-R.Its distribution map of the electric field and surface current point
Butut is as shown in Figure 4.
From the figure 3, it may be seen that (6.25THz, letter refer to pattern f to the absorber at resonant frequency 11, hereafter f1With at this) absorption
Rate is 96%, and (14.5THz, letter refer to pattern f at resonant frequency 22, hereafter f2With at this) absorptivity be 97%.
From Fig. 4 (a) and (c), pattern f1It is the phase between the surface respond or neighboring unit structure by periodic structure
Interaction produces, and shows the resonance characteristics of even level；Fig. 4 (b) and (d) understand, pattern f2It is by the idol of a pair of of opposite in phase
Level (being similar to four even level) produces.Therefore pattern f2Absworption peak than pattern f1Absworption peak have higher FOM numbers.
9 analysis of Influential Factors of embodiment
Hereinafter except the parameter of change, other specification is with the data instance in embodiment 1.
The influence of 9.1 cross material structure unit sizes
The horizontal stripes of construction unit and the wide a of belt are remained unchanged, and long b changes, and by taking embodiment 5-7 as an example, are inhaled
Variation tendency of the spectrum with aspect ratio is received, as shown in Figure 5.
As seen from Figure 5, as long b changes, the absworption peak generation of the absorber of cross material structure unit is bright
It is aobvious to change, with a:The increase of b, blue shift occurs for two absworption peaks, and absorption intensity reduces.
The influence of 9.2 polarisation angles
E field polarization direction is initially along y-axis, is then rotated to x-axis direction, under different polarisation angles (θ), cross
The absorption spectra of material structure unit with polarization direction variation tendency, as shown in Figure 6.
It will be appreciated from fig. 6 that either the intensity of the position of absworption peak or absworption peak does not change, thus illustrate, should
Cross material structure unit from E field polarization direction influence.
The influence of 9.3 graphene Fermi energy
Different graphene Fermi can under, the variation tendency of the absorptivity of absorber of the invention, as shown in Figure 7.
As shown in Figure 7, as the increase of graphene Fermi energy, the position of absworption peak are moved to high frequency direction, thus also said
Bright, cross material structure unit of the invention has flexible adjustability, as needed, can regulate and control the position of absworption peak.
The influence of the refractive index of 9.4 dielectric layers
When dielectric layer refractive index is different, the variation tendency of the absorptivity of absorber of the invention, as shown in Figure 8.
As shown in Figure 8, as the increase of dielectric layer refractive index, the position of absworption peak are moved to low frequency direction.The product of the structure
Prime factor formula is：
Wherein：△ f/ Δs n is the size that frequency occurs per refractive index (RIU) under change.
Pass through calculating, it can be deduced that pattern f2FOM be 15.35.
Claims (7)
- A kind of 1. Terahertz dual-band absorber based on cross grapheme material, it is characterised in that including from top to bottom according to Metallic reflector, dielectric layer and the patterned layer of secondary setting, the patterned layer is by the cross material structure list in periodic arrangement Member composition, each cross material structure unit are formed by orthogonal horizontal stripes and vertical band connection, horizontal stripes Be made with belt by graphene, the lattice period d of the cross material structure unit is 3-5 μm, each horizontal stripes and The wide a of belt is 0.6-1 μm, long b is 1.2-2 μm.
- 2. the Terahertz dual-band absorber based on cross grapheme material as claimed in claim 1, it is characterised in that institute The thickness for stating patterned layer is 1nm.
- 3. the Terahertz dual-band absorber based on cross grapheme material as claimed in claim 1, it is characterised in that institute Metallic reflector is stated as metallic film made of the metal material of high conductivity, the thickness of metallic reflector for 200- 300μm。
- 4. the Terahertz dual-band absorber based on cross grapheme material as claimed in claim 3, it is characterised in that institute It is gold, silver, aluminium or copper to state metal material.
- 5. the Terahertz dual-band absorber based on cross grapheme material as claimed in claim 1, it is characterised in that institute The dielectric constant for stating dielectric layer is 3-5, and the thickness of dielectric layer is 3-5 μm.
- 6. the Terahertz dual-band absorber based on cross grapheme material as claimed in claim 5, it is characterised in that institute It is silica membrane to state dielectric layer.
- 7. the application of the Terahertz dual-band absorber based on cross grapheme material described in claim 1, its feature exist In the absorber is applied to sensing, optically filtering and the detection device of electromagnetic wave.
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| CN108646325A (en) * | 2018-05-07 | 2018-10-12 | 厦门大学 | A kind of adjustable graphene wide angle Terahertz wave absorbing device of frequency |
| CN109326854A (en) * | 2018-09-10 | 2019-02-12 | 桂林电子科技大学 | A kind of middle tunable IR bandstop filter based on graphene |
| CN109490997A (en) * | 2018-11-23 | 2019-03-19 | 华南师范大学 | The perfect absorber of graphene array based on circle perforation |
| CN109509989A (en) * | 2019-01-11 | 2019-03-22 | 南京航空航天大学 | A kind of heat adjustable frequency selection wave-absorber based on water |
| CN110289500A (en) * | 2019-04-26 | 2019-09-27 | 中国计量大学上虞高等研究院有限公司 | Tunable dual band Terahertz absorber |
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| CN108646325B (en) * | 2018-05-07 | 2019-09-20 | 厦门大学 | A kind of adjustable graphene wide angle Terahertz wave absorbing device of frequency |
| CN108646325A (en) * | 2018-05-07 | 2018-10-12 | 厦门大学 | A kind of adjustable graphene wide angle Terahertz wave absorbing device of frequency |
| CN109326854B (en) * | 2018-09-10 | 2020-07-17 | 桂林电子科技大学 | Graphene-based intermediate infrared tunable band-stop filter |
| CN109326854A (en) * | 2018-09-10 | 2019-02-12 | 桂林电子科技大学 | A kind of middle tunable IR bandstop filter based on graphene |
| CN109490997A (en) * | 2018-11-23 | 2019-03-19 | 华南师范大学 | The perfect absorber of graphene array based on circle perforation |
| CN109509989A (en) * | 2019-01-11 | 2019-03-22 | 南京航空航天大学 | A kind of heat adjustable frequency selection wave-absorber based on water |
| CN110289500A (en) * | 2019-04-26 | 2019-09-27 | 中国计量大学上虞高等研究院有限公司 | Tunable dual band Terahertz absorber |
| CN111175864B (en) * | 2019-12-22 | 2022-02-18 | 南京理工大学 | Surface plasmon lens of cross annular array structure |
| CN111175864A (en) * | 2019-12-22 | 2020-05-19 | 南京理工大学 | Surface plasmon lens of cross annular array structure |
| CN111308588A (en) * | 2020-03-23 | 2020-06-19 | 中北大学 | Multi-band perfect absorber based on surface plasmons |
| CN112378882A (en) * | 2020-11-06 | 2021-02-19 | 中北大学南通智能光机电研究院 | Terahertz metamaterial liquid phase refractive index sensor based on micro-flow channel |
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| CN112490678B (en) * | 2020-11-12 | 2022-11-01 | 云南师范大学 | VO-based2Broadband terahertz super-surface absorption unit and super-surface absorber |
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| CN112909565A (en) * | 2021-01-20 | 2021-06-04 | 华南师范大学 | Multi-waveband absorber with mixed patterned metal-graphene super-surface |
| CN112909565B (en) * | 2021-01-20 | 2023-08-08 | 华南师范大学 | Multi-band absorber with mixed patterned metal-graphene super surface |
| CN113410648B (en) * | 2021-06-10 | 2022-07-15 | 上海交通大学 | Graphene-based passband switchable frequency selection surface and implementation method thereof |
| CN113410648A (en) * | 2021-06-10 | 2021-09-17 | 上海交通大学 | Pass band switchable frequency selection surface based on graphene and implementation method thereof |
| CN113741065A (en) * | 2021-09-09 | 2021-12-03 | 安徽大学 | Square lattice super-surface resonator with adjustable optical rotation and polarization |
| CN114408912A (en) * | 2021-12-30 | 2022-04-29 | 电子科技大学 | Preparation method of low-reflection graphene deflection type terahertz wave zone plate |
| CN116106263A (en) * | 2023-04-07 | 2023-05-12 | 成都甄识科技有限公司 | Super-surface local plasmon sensor with high sensitivity and high quality factor |
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