CN108646325B - A kind of adjustable graphene wide angle Terahertz wave absorbing device of frequency - Google Patents
A kind of adjustable graphene wide angle Terahertz wave absorbing device of frequency Download PDFInfo
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- CN108646325B CN108646325B CN201810425436.3A CN201810425436A CN108646325B CN 108646325 B CN108646325 B CN 108646325B CN 201810425436 A CN201810425436 A CN 201810425436A CN 108646325 B CN108646325 B CN 108646325B
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Abstract
A kind of adjustable graphene wide angle Terahertz wave absorbing device of frequency is related to Terahertz and inhales wave.It is a kind of 5 layers of structure devices, from top to bottom successively are as follows: upper graphene strips belt, upper dielectric layer, lower graphene strips belt, lower dielectric layer and metallic substrate layer；Have in xoy plane periodically, the upper graphene strips belt is made of rectangular strip shape graphene；Upper dielectric layer is made of advanced low-k materials, and lower graphene strips belt is made of the band-like graphene of rectangular strip；Lower dielectric layer is made of advanced low-k materials；The thickness of metallic substrate layer is greater than the skin depth of incidence wave；The lower graphene strips belt is mutually perpendicular to place and be isolated by upper dielectric layer with upper graphene strips belt.
Description
Technical field
The present invention relates to Terahertzs to inhale wave, inhales wave more particularly, to a kind of adjustable graphene wide angle Terahertz of frequency
Device.
Background technique
THz wave generally refers to frequency in the electromagnetic wave of 0.1~10THz, and corresponding wave-length coverage is 3~0.03mm [1-
2], before the various fields such as broadband connections, spectrum analysis, detection sensing, biomedical, safety check imaging all have wide application
Scape.Since Landy in 2008 et al. propose a kind of perfect Meta Materials wave absorbing device (Phys.Rev.Lett., vol.100,
Pp.207402,2008) after, Terahertz Meta Materials wave absorbing device research is aroused great concern.Sub-wavelength metal is micro-
Array of structures layer-dielectric layer-metal layer sandwich-like structure is a kind of typical structure of Meta Materials wave absorbing device, can pass through inhibition
Transmission and reflection channel are realized using sub-wavelength metal array layer structure, the ohmic loss of metal layer and Absorption of Medium to entering
The perfect of radio magnetic wave absorbs.However metal and dielectric material of this kind of wave absorbing device due to using routine, in general, only
The adjusting that wave frequency rate is inhaled to this kind of Meta Materials wave absorbing device can be just able to achieve by way of changing geometric structure diamete, once device
Preparation is completed, structure size determines, absorption characteristic does not just have adjustability.Therefore, in order to not changing geometry
While realize adjusting to Terahertz absorption frequency, carry out the New Radar Absorbing device with electromagnetic parameter material with adjustable in a deep going way and study
Work a, it has also become important research direction in Terahertz wave absorbing device field.
Graphene is a kind of honeycomb Two-dimensional Carbon atom material, due to its special electronic band structure, graphene performance
The excellent performance characteristics such as unique electricity adjustability, low intrinsic loss and height light field local out, receive significant attention.Especially
It is, due to that can support that graphene is in Terahertz, infrared and the wave bands such as visible surface plasma excimer (SPPs) transmission
A kind of electromagnetic spectrum material as function admirable is widely used in all kinds of surface phasmon devices.It is new based on grapheme material
Type Meta Materials wave absorbing device, not only may be implemented high absorptivity, can also be realized by external bias voltage to graphene conductance
The adjusting of rate, and then realize the adjusting to its microwave absorbing property.Currently, it has already been proposed the absorptions of the graphene of diversified forms
Device is inhaled for example, Ning Renxia et al. proposes a kind of broad band absorber based on hyperbola figure graphene Meta Materials
The relative absorbance bandwidth that yield is 70% is 45% (Eur.Phys.J.Appl.Phys., 68 (2): 20401,2014)；Yaying
Ning et al. propose the frequency based on the adjustable wave absorbing device wave absorbing device of graphene-metal Nano structure when graphene chemical potential from
When 0.2eV changes to 0.8eV, wave absorbing device will increase to 32.2THz by 30.1THz to center absorption frequency, relative to minimum suction
Wave frequency rate score tuning range is only 6.97%, and the range that its incidence wave angle does not depend on is only -12 ° to 12 ° (Optics
Express,25(26),2017).However, present many graphene wave absorbing devices still remain, device architecture is complicated, angle according to
Rely, the problems such as adjustable range is small is adjusted to the suction wave frequency rate and absorptivity of incidence wave.In view of the adjustable wide angle Terahertz of frequency
Wave absorbing device is with important application prospects in the fields such as detector, sensor, sensor, electromagnetic wave detection and regulation, stealthy etc.,
Therefore, the graphene wide angle Terahertz wave absorbing device that studying, suction wave frequency rate simple with structure can be adjusted on a large scale has weight
Want meaning.
Summary of the invention
It is an object of the invention to the suction wave rate frequencies and angular adjustment in order to solve graphene wave absorbing device in the prior art
The lesser problem of range provides a kind of frequency that can be achieved to be adjusted on a large scale to the absorption frequency of broad-angle-incident THz wave
The adjustable graphene wide angle Terahertz wave absorbing device of rate.
The present invention is a kind of 5 layers of structure devices, from top to bottom successively are as follows: upper graphene strips belt, upper dielectric layer, lower graphite
Alkene slice layer, lower dielectric layer and metallic substrate layer；Have periodically in xoy plane, the upper graphene strips belt is by rectangle
Band-like graphene composition；Upper dielectric layer is made of advanced low-k materials, and lower graphene strips belt is by the band-like graphene of rectangular strip
Composition；Lower dielectric layer is made of advanced low-k materials；The thickness of metallic substrate layer is greater than the skin depth of incidence wave；Under described
Graphene strips belt is mutually perpendicular to place and be isolated by upper dielectric layer with upper graphene strips belt.
Described is respectively L with the cycle length of periodic cellular construction in the x and y direction in xoy planex=Ly
=4 μm；The upper graphene strips belt is W by widthu=0.9 μm, length Lx=4 μm of rectangular strip shape graphene composition；On
Dielectric layer with a thickness of h1=1 μm of advanced low-k materials are constituted, and lower graphene strips belt is W by widthd=0.9 μm, length
For LyThe band-like graphene composition of=4 μm of rectangular strip；Lower dielectric layer with a thickness of h2=4 μm of advanced low-k materials are constituted；Gold
Belong to substrate layer with a thickness of h3=1 μm of skin depth greater than incidence wave.
The advanced low-k materials can be Sio2、Topas、Zro2One of Deng；Gold can be used in the metallic substrate layer
Or the good conductor materials such as silver.
Working principle of the present invention is as follows:
The present invention is a kind of periodical graphene strips belt-dielectric layer-graphene strips belt -5 layers of dielectric layer-metal layer knot
Structure device, the thick metal layers in design structure are equivalent to the transmission that mirror-reflection inhibits electromagnetic wave to electromagnetic wave incident, lead to simultaneously
Cross rationally design up and down graphene layer, upper and lower medium layer structure size can effectively inhibit reflection of electromagnetic wave, pass through upper and lower stone
Black alkene layer has motivated the mode of the Terahertz local surface phasmon resonance to intercouple simultaneously, realizes to incident THz wave
Perfect absorb；Using the electric adjustability of graphene, the chemical potential by adjusting graphene layer changes the excimers such as graphene surface
Constraint performance, the too range of incident THz wave centre frequency is adjusted to realize.
The beneficial effects of the present invention are:
1) present invention has periodical graphene strips belt structure, can excite local surfaces phasmon, enter to narrowband
THz wave is penetrated with high absorptivity, the perfect of the parameter present invention achievable 100% is rationally set and is absorbed.
2) characteristic that the present invention with the absorptivity to incident THz wave there is angle not depend on, when graphene chemical potential
When taking 0.5eV, when the angle of incident THz wave changes within the scope of 0 °~85 °, the absorptivity of the wave absorbing device can be kept
80% or more.
3) present invention has electric adjustability, and the bias voltage by changing graphene strips belt up and down can be realized to terahertz
Hereby the absorption frequency of wave is adjusted on a large scale, and when graphene chemical potential changes to 0.9eV from 0.2eV, wave absorbing device is to THz wave
Central absorbent frequency 12THz will be increased to by 5.4THz, the score tuning range relative to low-limit frequency is up to 122.2%.
4) the configuration of the present invention is simple is easier to apply biasing, can be used for infrared region, visible light region by change of scale
Or the electro-magnetic wave absorption of other frequency ranges.
Detailed description of the invention
Fig. 1 is the structure composition schematic diagram of the embodiment of the present invention.
Fig. 2 is the cellular construction top view of the embodiment of the present invention.
Fig. 3 is absorption curve figure of the embodiment of the present invention in 0~85 ° of incidence angles degree.
Fig. 4 is absorbance curves figure of the embodiment of the present invention under the different chemical potentials such as 0.2~0.9eV.
Specific embodiment
With reference to the accompanying drawing and specific example, it is further described and illustrates the present invention.
One embodiment of the present of invention is as illustrated in fig. 1 and 2, a kind of adjustable graphene wide angle Terahertz wave absorbing device of frequency
A kind of five-layer structure device, from top to bottom successively are as follows: upper graphene strips belt 1, upper dielectric layer 2, lower graphene strips belt 3,
Lower dielectric layer 4, metallic substrate layer 5 are constituted；The adjustable graphene wide angle Terahertz wave absorbing device of frequency has in xoy plane
Having the cycle length of periodic cellular construction in the x and y direction is respectively LxAnd Ly, in which: upper graphene strips belt 1 be by
Width is Wu, length LxRectangular strip shape graphene composition；Upper dielectric layer 2 is with a thickness of h1Advanced low-k materials constitute,
Such as: Sio2、Topas、Zro2Deng；It is W that lower graphene strips belt 3, which is also by width,dLength is LyThe band-like graphene group of rectangular strip
At；Lower dielectric layer 4 is with a thickness of h2Advanced low-k materials constitute, such as: Sio2、Topas、Zro2Deng；Metallic substrate layer 5
Material is the good conductor materials such as gold or silver, with a thickness of h3Greater than the skin depth of incidence wave；The adjustable stone of a kind of frequency
Its structure feature of the wide angle Terahertz wave absorbing device of black alkene is graphene band 3 and graphene band 1 in the structure of wave absorbing device
It is mutually perpendicular to place, be isolated by upper dielectric layer 2.The cellular construction dimensional parameters setting are as follows: Lx=Ly=4 μm, Wu=Wd=
0.9 μm, h1=1 μm, h2=4 μm, h3=1 μm.Since the upper layer and lower layer graphene strips belt of the wave absorbing device can motivate phase
The Terahertz surface phasmon of mutual coupling can have high absorptivity to the narrow band terahertz band wave of wider angle range incident,
When chemical potential takes 0.5eV, Electromagnetic Simulation obtains the present embodiment to absorbance curves such as Fig. 3 of different angle incidence THz wave
It is shown, it can be seen that when the polarized THz wave of incident TM is when angle changes within the scope of 0 °~85 °, the absorption of the present embodiment
Rate is positively retained at 80% or more, the absorption characteristic not depended on good angle.By changing load on graphene layer
The mode of bias voltage can change the chemical potential of graphene, and then can be realized the adjusting of absorptivity, the present embodiment is not
To the absorbance curves of vertical incidence THz wave as shown in figure 4, it can be seen that being taken in chemical potential under same chemistry potential condition
When 0.3eV and 0.5eV, the absorptivity of the present embodiment can reach 100%, and the present embodiment has electric adjustability, when this reality of maintenance
Apply a geometric parameter it is constant under the premise of, when graphene chemical potential changes to 0.9eV from 0.2eV, the present embodiment is to THz wave
Central absorbent frequency will increase to 12THz by 5.4THz, i.e., relative to low-limit frequency score tuning range up to 122.2%,
It is a kind of novel Terahertz wave absorbing device of wide angle of regulable center frequency of good performance.
The present invention is a kind of 5 layers of structure devices, is followed successively by graphene strips belt-dielectric layer-graphene band from top to bottom
Layer-dielectric layer-metal layer, wherein graphene strips belt is made of the band-like graphene of periodic rectangular, two layers of graphene band
Layer is mutually perpendicular to place, and is isolated by dielectric layer.The present invention can be realized the strong absorption to THz wave and have to THz wave
The characteristic that angle does not depend on, when incident angle increases to 85 °, absorptivity can still maintain 80% or more, when graphene chemistry
Gesture increases to 0.9eV from 0.2eV, and inhaling wave frequency rate by 5.4THz increases to 12THz, and corresponding score tuning range reaches
122.2%.The present invention can be achieved to adjust the absorptivity and centre frequency of THz wave on a large scale, be a kind of potential frequency
The adjustable novel wide angle Terahertz wave absorbing device of rate.
Claims (9)
1. a kind of adjustable graphene wide angle Terahertz wave absorbing device of frequency, it is characterised in that the wave absorbing device is a kind of 5 layers of knot
Structure device, from top to bottom successively are as follows: upper graphene strips belt, upper dielectric layer, lower graphene strips belt, lower dielectric layer and metal liner
Bottom, and this 5 layers of structures all have periodicity in xoy plane；The upper graphene strips belt is by rectangular strip shape graphene group
At；Upper dielectric layer is made of advanced low-k materials；Lower graphene strips belt is made of the band-like graphene of rectangular strip；Lower dielectric layer
It is made of advanced low-k materials；The thickness of metallic substrate layer is greater than the skin depth of incidence wave；The lower graphene strips belt
It is mutually perpendicular to place and be isolated by upper dielectric layer with upper graphene strips belt.
2. a kind of adjustable graphene wide angle Terahertz wave absorbing device of frequency as described in claim 1, it is characterised in that it is described
Having the cycle length of periodic cellular construction in the x and y direction in xoy plane is respectively Lx=Ly=4 μm.
3. a kind of adjustable graphene wide angle Terahertz wave absorbing device of frequency as described in claim 1, it is characterised in that on described
Graphene strips belt is W by widthu=0.9 μm, length Lx=4 μm of rectangular strip shape graphene composition.
4. a kind of adjustable graphene wide angle Terahertz wave absorbing device of frequency as described in claim 1, it is characterised in that on described
Dielectric layer with a thickness of h1=1 μm of advanced low-k materials are constituted.
5. a kind of adjustable graphene wide angle Terahertz wave absorbing device of frequency as described in claim 1, it is characterised in that under described
Graphene strips belt is W by widthd=0.9 μm, length LyThe band-like graphene composition of=4 μm of rectangular strip.
6. a kind of adjustable graphene wide angle Terahertz wave absorbing device of frequency as described in claim 1, it is characterised in that under described
Dielectric layer with a thickness of h2=4 μm of advanced low-k materials are constituted.
7. a kind of adjustable graphene wide angle Terahertz wave absorbing device of frequency as described in claim 1, it is characterised in that the gold
Belong to substrate layer with a thickness of h3=1 μm of skin depth greater than incidence wave.
8. a kind of adjustable graphene wide angle Terahertz wave absorbing device of frequency as described in claim 1, it is characterised in that described low
Dielectric constant material is Sio2、Topas、Zro2One of.
9. a kind of adjustable graphene wide angle Terahertz wave absorbing device of frequency as described in claim 1, it is characterised in that the gold
Belong to substrate layer using gold or silver-colored good conductor material.
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| CN109188579B (en) * | 2018-10-23 | 2020-04-21 | 江南大学 | Method and device for absorbing waves of graphene in visible light wave band |
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| CN113917581B (en) * | 2021-10-09 | 2024-08-16 | 青岛大学 | Terahertz near-perfect absorber with chiral selection |
| CN115020948B (en) * | 2022-05-14 | 2024-05-10 | 河南工业大学 | Graphene-based broadband tunable terahertz band-reject filter |
| CN115275624A (en) * | 2022-07-18 | 2022-11-01 | 南通大学 | Graphene-based hyperbolic metamaterial composite structure capable of realizing high transmission |
| CN118486753A (en) * | 2024-07-15 | 2024-08-13 | 中国石油大学(华东) | Terahertz detector based on graphene composite structure beam scanning antenna |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2016133632A (en) * | 2015-01-20 | 2016-07-25 | 日本電信電話株式会社 | Optical element |
| CN106025572A (en) * | 2016-05-26 | 2016-10-12 | 华北水利水电大学 | Partial non-periodic structure based graphene ultra-broadband wave absorber |
| CN106405718A (en) * | 2016-12-07 | 2017-02-15 | 西北大学 | Electronic control terahertz polaroid based on graphene grid band structure and use method |
| CN106547121A (en) * | 2017-01-19 | 2017-03-29 | 中南林业科技大学 | A kind of light polarization transducer based on Graphene |
| CN107942418A (en) * | 2017-11-14 | 2018-04-20 | 郑州大学 | It is a kind of based on the Terahertz dual-band absorber of cross grapheme material and its application |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2602821B1 (en) * | 2011-12-07 | 2014-02-12 | Universität Augsburg | Graphene-based nanodevices for terahertz electronics |
| US9643841B2 (en) * | 2013-04-17 | 2017-05-09 | Georgia Tech Research Corporation | Graphene-based plasmonic nano-antenna for terahertz band communication |
-
2018
- 2018-05-07 CN CN201810425436.3A patent/CN108646325B/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2016133632A (en) * | 2015-01-20 | 2016-07-25 | 日本電信電話株式会社 | Optical element |
| CN106025572A (en) * | 2016-05-26 | 2016-10-12 | 华北水利水电大学 | Partial non-periodic structure based graphene ultra-broadband wave absorber |
| CN106405718A (en) * | 2016-12-07 | 2017-02-15 | 西北大学 | Electronic control terahertz polaroid based on graphene grid band structure and use method |
| CN106547121A (en) * | 2017-01-19 | 2017-03-29 | 中南林业科技大学 | A kind of light polarization transducer based on Graphene |
| CN107942418A (en) * | 2017-11-14 | 2018-04-20 | 郑州大学 | It is a kind of based on the Terahertz dual-band absorber of cross grapheme material and its application |
Non-Patent Citations (1)
| Title |
|---|
| Graphene based tunable metamaterial absorber and polarization modulation in terahertz frequency;Yin Zhang et.al.;《OPTICS EXPRESS》;20140922;第22卷(第19期);第22743-22752页 * |
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