CN207753140U - Based on the adjustable THz wave filter of novel graphite alkene - Google Patents
Based on the adjustable THz wave filter of novel graphite alkene Download PDFInfo
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- CN207753140U CN207753140U CN201820078521.2U CN201820078521U CN207753140U CN 207753140 U CN207753140 U CN 207753140U CN 201820078521 U CN201820078521 U CN 201820078521U CN 207753140 U CN207753140 U CN 207753140U
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- thz wave
- graphene
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- resonator
- graphite alkene
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Abstract
The utility model discloses a kind of adjustable THz wave filters of novel graphite alkene, it includes basal layer and the first graphene resonator above basal layer and the second graphene resonator positioned at the first graphene resonator inside, terahertz wave signal is incident from filter upper vertical, the fermi level of graphene is adjusted by applied voltage source, to realize the tuning of different THz wave peak values, to realize adjustable THz wave bandstop filter.The utility model has many advantages, such as that compact-sized, adjustable, size is small, filtering performance is good.
Description
Technical field
The present invention relates to filter more particularly to a kind of adjustable THz wave filters of novel graphite alkene.
Background technology
In recent years, the THz wave on electromagnetic spectrum between development quite ripe millimeter wave and infrared light without
It is suspected to be a brand-new research field.THz wave 0.1~10THz of frequency, wavelength are 30 μm~3mm.Due to Terahertz ray
Energy possessed by photon generally only has a few milli electron volts, therefore does not allow destructible tested substance.For many nonmetallic
For non-polar material, since they are smaller to the absorption of THz wave, as long as in conjunction with corresponding technological means,
The internal information of this material can be obtained.The special performance of Terahertz is to THz time domain spectrum technology, THz imaging techniques, THz
The fields such as broadband connections, THz radars, astronomy, medical imaging, safety detection bring profound influence.Due to Terahertz ray
Frequency it is very high, therefore its spatial resolution is naturally also very high.The extensive science foreground that Terahertz has is by whole world institute
Generally acknowledge, application remains at during continuous research and development.With the breakthrough in terahertz emission source and Detection Techniques, terahertz
Hereby unique advantageous characteristic is found and is shown in the detection of material science, detection of gas, biology and medicine, communication etc. huge
Big application prospect.It may be said that Terahertz Technology science is not only the important foundation problem in scientific technological advance, and it is new one
The great demand developed for information industry and basic science.Efficient terahertz emission source and ripe detection technique are to push
The most important condition of Terahertz Technology scientific development and application, but the extensive use of Terahertz Technology be unable to do without and meets different application neck
The support for the practical function element that domain requires.In numerous application systems such as Terahertz communication, multispectral imaging, physics, chemistry,
It is urgent to the grade demand of function element of terahertz waveguide, switch, resonator, filter and work(.
Invention content
The present invention provides a kind of THz wave filtering simple in structure, filtration efficiency is high to overcome the shortage of prior art
Device.
In order to achieve the above object, technical scheme is as follows：
A kind of adjustable THz wave filter of novel graphite alkene, it is characterised in that including basal layer and on basal layer
The first graphene resonator of side, and the second graphene resonator positioned at the first graphene resonator inside.THz wave is believed
It is number incident from filter upper vertical, the fermi level of graphene is adjusted by applied voltage source, to realize different Terahertzs
The tuning of crest value, to realize adjustable THz wave bandstop filter.The present invention is with compact-sized, adjustable, size is small, filter
The advantages that wave performance is good.
The adjustable THz wave filter of a kind of novel graphite alkene, it is characterised in that the material of basal layer is silicon, folding
It is 3.4 to penetrate rate, and length and width are respectively 50~60 μm, and thickness is 55~60 μm.A kind of novel graphite alkene is adjustable too
Hertz wave filter, it is characterised in that the material of the first graphene resonator is graphene, and relative dielectric constant can be with outer
Power-up potential source changes fermi level and changes, and thickness is only 1nm, and length and width are respectively 50~60 μm, and line width is 2~5 μm,
The gap of upside and downside is 3~5 μm.The adjustable THz wave filter of a kind of novel graphite alkene, it is characterised in that the
The material of two graphene resonators is identical as the first graphene resonator, thickness 1nm, and length is 10~15 μm, width 20
~25 μm, line width is 2~5 μm, and intermediate gap is 1~3 μm.
The present invention has many advantages, such as that compact-sized, adjustable, size is small, filtering performance is good.
Description of the drawings
Fig. 1 is the adjustable THz wave filter 3 dimensional drawing of novel graphite alkene；
Fig. 2 is the adjustable THz wave filter two-dimensional structure figure of novel graphite alkene；
Fig. 3 is the transmitance performance chart when graphene fermi level is 0.6eV；
Fig. 4 is the transmitance performance chart when graphene fermi level is 0.8eV.
Specific implementation mode
As shown in Fig. 1~2, a kind of adjustable THz wave filter of novel graphite alkene, it is characterised in that including basal layer with
And positioned at the first graphene resonator above basal layer, and the second graphene resonance positioned at the first graphene resonator inside
Device.Terahertz wave signal is incident from filter upper vertical, and the fermi level of graphene is adjusted by applied voltage source, to real
The tuning of existing different THz wave peak values, to realize adjustable THz wave bandstop filter.The present invention have it is compact-sized, can
It adjusts, the advantages that size is small, filtering performance is good.
The adjustable THz wave filter of a kind of novel graphite alkene, it is characterised in that the material of basal layer is silicon, folding
It is 3.4 to penetrate rate, and length and width are respectively 50~60 μm, and thickness is 55~60 μm.A kind of novel graphite alkene is adjustable too
Hertz wave filter, it is characterised in that the material of the first graphene resonator is graphene, and relative dielectric constant can be with outer
Power-up potential source changes fermi level and changes, and thickness is only 1nm, and length and width are respectively 50~60 μm, and line width is 2~5 μm,
The gap of upside and downside is 3~5 μm.The adjustable THz wave filter of a kind of novel graphite alkene, it is characterised in that the
The material of two graphene resonators is identical as the first graphene resonator, thickness 1nm, and length is 10~15 μm, width 20
~25 μm, line width is 2~5 μm, and intermediate gap is 1~3 μm.
Embodiment 1
As shown in Fig. 1~2, a kind of adjustable THz wave filter of novel graphite alkene, including basal layer 1 and be located at substrate
1 the first graphene resonator 2 of top of layer, and the second graphene resonator 3 inside the first graphene resonator 2.Too
Hertz wave signal is incident from filter upper vertical, and the fermi level of graphene is adjusted by applied voltage source, to realize not
With the tuning of THz wave peak value, to realize adjustable THz wave bandstop filter.The material of basal layer 1 is silicon, refractive index
It is 3.4, length and width are respectively 50 μm, and thickness is 57 μm.The material of first graphene resonator 2 is graphene, opposite
Dielectric constant can change as applied voltage source changes fermi level, and thickness is only 1nm, and length and width are respectively 50 μm,
Line width is 2 μm, and the gap of upside and downside is 3 μm, the material of the second graphene resonator 3 and the first graphene resonator phase
Together, thickness 1nm, length are 10 μm, and width is 20 μm, and line width is 2 μm, and intermediate gap is 1 μm.Novel graphite alkene is adjustable too
The property indices of hertz wave filter are tested using COMSOL Multiphysics softwares, pair list when emulation
Periodic boundary condition is arranged in meta structure, the results show that when graphene fermi level is 0.6eV, filter transmitance performance
Curve graph is as shown in Figure 3；When changing graphene fermi level by applied voltage source, filter transmitance performance chart is such as
Shown in Fig. 4.
Claims (4)
1. a kind of adjustable THz wave filter of novel graphite alkene, it is characterised in that including basal layer (1), and be located at basal layer
(1) the first graphene resonator (2) of top, and positioned at the second internal graphene resonator of the first graphene resonator (2)
(3), terahertz wave signal is incident from filter upper vertical, and the fermi level of graphene is adjusted by applied voltage source, to
The tuning for realizing different THz wave peak values, to realize adjustable THz wave bandstop filter.
2. the adjustable THz wave filter of a kind of novel graphite alkene according to claim 1, it is characterised in that basal layer (1)
Material be silicon, refractive index 3.4, length and width are respectively 50~60 μm, and thickness is 55~60 μm.
3. the adjustable THz wave filter of a kind of novel graphite alkene according to claim 1, it is characterised in that the first graphite
The material of alkene resonator (2) is graphene, and relative dielectric constant can change as applied voltage source changes fermi level, thick
Degree is only 1nm, and length and width are respectively 50~60 μm, and line width is 2~5 μm, and the gap of upside and downside is 3~5 μm.
4. the adjustable THz wave filter of a kind of novel graphite alkene according to claim 1, it is characterised in that the second graphite
The material of alkene resonator (3) is identical as first graphene resonator (2), thickness 1nm, and length is 10~15 μm, width 20
~25 μm, line width is 2~5 μm, and intermediate gap is 1~3 μm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201820078521.2U CN207753140U (en) | 2018-01-17 | 2018-01-17 | Based on the adjustable THz wave filter of novel graphite alkene |
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| CN201820078521.2U CN207753140U (en) | 2018-01-17 | 2018-01-17 | Based on the adjustable THz wave filter of novel graphite alkene |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109273805A (en) * | 2018-12-07 | 2019-01-25 | 金华伏安光电科技有限公司 | A kind of tunable filter based on graphene |
| CN112886260A (en) * | 2021-01-12 | 2021-06-01 | 之江实验室 | Force/electricity double-adjustable multi-frequency-band reflection type polarization insensitive resonator |
| CN113948871A (en) * | 2021-09-28 | 2022-01-18 | 西安交通大学 | Frequency-adjustable terahertz electromagnetic induction transparent device and frequency regulation method and application thereof |
-
2018
- 2018-01-17 CN CN201820078521.2U patent/CN207753140U/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109273805A (en) * | 2018-12-07 | 2019-01-25 | 金华伏安光电科技有限公司 | A kind of tunable filter based on graphene |
| CN112886260A (en) * | 2021-01-12 | 2021-06-01 | 之江实验室 | Force/electricity double-adjustable multi-frequency-band reflection type polarization insensitive resonator |
| CN112886260B (en) * | 2021-01-12 | 2022-06-17 | 之江实验室 | Force/electricity double-adjustable multi-frequency-band reflection type polarization insensitive resonator |
| CN113948871A (en) * | 2021-09-28 | 2022-01-18 | 西安交通大学 | Frequency-adjustable terahertz electromagnetic induction transparent device and frequency regulation method and application thereof |
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| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20180821 Termination date: 20190117 |