CN113948871A - Frequency-adjustable terahertz electromagnetic induction transparent device and frequency regulation method and application thereof - Google Patents
Frequency-adjustable terahertz electromagnetic induction transparent device and frequency regulation method and application thereof Download PDFInfo
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Abstract
The invention discloses a frequency-adjustable terahertz electromagnetic induction transparent device, a frequency regulation method and application thereof, wherein the frequency-adjustable terahertz electromagnetic induction transparent device comprises: the device comprises a substrate, a single-layer graphene film, n U-shaped opening annular metal strips and 2n concave-like metal strips; wherein n is an integer greater than or equal to 2; the single-layer graphene film is arranged on the substrate; the n U-shaped opening annular metal strips are periodically arranged on the single-layer graphene film; two similar concave metal strips are symmetrically arranged in each U-shaped opening annular metal strip, and the U-shaped opening annular metal strip and the two similar concave metal strips are mutually coupled to generate an EIT effect. The invention realizes the frequency adjustability by changing the Fermi level of the graphene and adjusting the working frequency of the transparent window of the EIT structure, and has higher efficiency and feasibility compared with the passive adjustment realized by changing the geometric dimension.
Description
Technical Field
The invention belongs to the technical field of terahertz metamaterial functional devices, and particularly relates to a frequency-adjustable terahertz electromagnetic induction transparent device and a frequency regulation method and application thereof.
Background
Electromagnetic Induced Transparency (EIT) refers to a quantum destructive interference effect generated from a specific atomic energy level structure in a quantum mechanical three-level atomic system, so that the transmission of electromagnetic waves by a material is changed, and a narrow transparent window is formed in a wide absorption spectrum. This phenomenon is always accompanied by extreme changes in dispersion characteristics and is therefore potentially valuable in many applications such as slow light and nonlinear effects.
However, the conventional quantum EIT implementation requires complex conditions such as optical pumping temperature and low temperature, which severely limits its practical application, especially in on-chip integration. For the traditional electromagnetic induction transparent device, the working frequency of the transparent window can only be passively adjusted, namely the working frequency of the electromagnetic induction transparent window can only be changed by changing the geometric dimension of the structure, so that the practical application of EIT in the fields of sensing, high-speed slow light modulation and the like is limited.
Recently, the advent of two-dimensional metamaterials has made it possible to manipulate the interaction of light with matter in artificially designed structures, thereby creating the possibility of achieving EIT effects in classical optical systems.
Disclosure of Invention
The invention aims to provide a frequency-adjustable terahertz electromagnetic induction transparent device, a frequency regulation method and application thereof, so as to solve one or more technical problems. The invention particularly provides a frequency-adjustable terahertz electromagnetic induction transparent device based on graphene. In the method, the working frequency of the transparent window of the EIT structure can be regulated and controlled by changing the Fermi level of the graphene, so that the frequency can be regulated, and compared with the method for realizing passive regulation and control by changing the geometric dimension, the method has higher efficiency and feasibility.
In order to achieve the purpose, the invention adopts the following technical scheme:
the invention relates to a frequency-adjustable terahertz electromagnetic induction transparent device, which comprises: the device comprises a substrate, a single-layer graphene film, n U-shaped opening annular metal strips and 2n concave-like metal strips; wherein n is an integer greater than or equal to 2;
the single-layer graphene film is arranged on the substrate; the n U-shaped opening annular metal strips are periodically arranged on the single-layer graphene film;
two similar concave metal strips are symmetrically arranged in each U-shaped opening annular metal strip, and the U-shaped opening annular metal strip and the two similar concave metal strips are mutually coupled to generate an EIT effect.
The invention further improves that the opening direction of the U-shaped opening annular metal strip is consistent with the notch direction of the concave-like metal strip.
The invention has the further improvement that the integral structure of the frequency-adjustable terahertz electromagnetic induction transparent device consists of a plurality of periodic unit structures; each U-shaped opening annular metal strip is combined with 2 concave-like metal strips in the U-shaped opening annular metal strip, and the single-layer graphene film and the substrate below the U-shaped opening annular metal strip form a periodic unit structure.
The invention is further improved in that the area of each periodic unit structure is 10 μm × 10 μm; in each periodic unit structure, the width of the U-shaped opening annular metal strip is 0.4 mu m; the length of the left arm and the length of the right arm are both 7 mu m; the length of a connecting arm between the left arm and the right arm is 7.5 mu m, and the length of the connecting arm from a preset lower boundary of the periodic unit structure is 0.4 mu m;
the width of the concave-like metal strip is 0.2 mu m; the left middle arm and the right middle arm of the concave-like metal strip are disconnected, gaps are arranged between the left middle arm and the bottom connecting arm and between the left middle arm and the right middle arm and the bottom connecting arm, the lengths of the two middle arms are both 4.05 micrometers, and the lengths of the gaps are both 0.2 micrometers; the top parts of the left side arm and the right side arm of the concave-like metal strip are respectively connected with the top parts of the left middle arm and the right middle arm, the bottom parts of the left side arm and the right side arm are respectively connected with the left end and the right end of the bottom connecting arm, and the distance between the left side arm and the right side arm and the distance between the left middle arm and the right middle arm are respectively 0.8 mu m;
the two similar concave metal strips in the U-shaped opening annular metal strip are respectively a first similar concave metal strip and a second similar concave metal strip; the distance between the right arm of the first concave metal strip and the left arm of the second concave metal strip is 0.2 μm; the distance between the left arm of the first concave metal strip and the left arm of the U-shaped open annular metal strip is 0.2 mu m; the distance between the right arm of the second concave metal strip and the right arm of the U-shaped open annular metal strip is 0.2 mu m; the distances between the connecting arms at the bottoms of the first concave metal strip and the second concave metal strip and the connecting arms of the U-shaped open annular metal strip are both 0.2 mu m.
A further development of the invention is that the substrate has a thickness of 1 μm; the thicknesses of the concave-like metal strip and the U-shaped opening annular metal strip are 0.2 mu m.
The invention has the further improvement that the frequency-adjustable terahertz electromagnetic induction transparent device is in a bright-dark coupling mode, the U-shaped opening annular metal strip is in a bright mode, and the concave-like metal strip is in a dark mode.
A further improvement of the invention is that the substrate is a silicon dioxide substrate.
The invention is further improved in that the U-shaped opening annular metal strip and the concave-like metal strip are made of noble metals.
The invention discloses a frequency regulation method of a frequency-adjustable terahertz electromagnetic induction transparent device, which comprises the following steps of:
the Fermi level of the single-layer graphene film is changed by applying voltage, and frequency regulation of the frequency-adjustable terahertz electromagnetic induction transparent device is realized.
The invention discloses application of a frequency-adjustable terahertz electromagnetic induction transparent device, which is used for sensing and high-speed slow light modulation.
Compared with the prior art, the invention has the following beneficial effects:
the invention discloses a graphene-based frequency-adjustable terahertz electromagnetic induction transparent device, and provides a device structure model of a U-shaped opening annular strip and a concave strip; the unit structure of the EIT periodic structure comprises a U-shaped opening annular metal strip, a concave-like metal strip, a substrate and a single-layer graphene arranged above the substrate; the working frequency of a transparent window of an EIT structure is regulated and controlled by changing the Fermi level of graphene, namely, the frequency is adjustable.
In the invention, the U-shaped open annular metal strip and the two similar concave metal strips can be made of silver or other noble metals, and the substrate material arranged below graphene can be made of silicon dioxide, namely, a graphene film is clamped between the substrate and the contact surface of the periodic metal strip structure; the U-shaped opening annular metal strip and the two concave-like metal strips are coupled with each other to generate a stable EIT effect. In conclusion, the adjustable electromagnetic induction transparency phenomenon is realized in the THz frequency band by integrating the single-layer graphene into the THz metamaterial composed of the silicon dioxide substrate and the metal strip.
In the method, the active regulation and control of EIT based on the graphene is realized by changing the Fermi level of the graphene, and compared with the passive regulation and control realized by changing the geometric dimension in the previous research, the method has higher efficiency and feasibility. The method has the core summary that the conductivity of the graphene is changed by changing the Fermi level of the graphene, so that the working frequency of the EIT transparent window is adjusted.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art are briefly introduced below; it is obvious that the drawings in the following description are some embodiments of the invention, and that for a person skilled in the art, other drawings can be derived from them without inventive effort.
Fig. 1 is a three-dimensional schematic diagram of a periodic structure of a graphene-based frequency-tunable terahertz electromagnetic induction transparent device according to an embodiment of the present invention;
fig. 2 is a schematic diagram of a top layer of a unit structure of a graphene-based frequency-tunable terahertz electromagnetic induction transparent device provided by an embodiment of the invention;
FIG. 3 is a schematic diagram of a simulated transmission spectrum of a single U-shaped open loop metal strip structure and a simulated transmission spectrum of a single concave-like metal strip structure according to an embodiment of the present invention;
fig. 4 is a schematic diagram of a simulated transmission spectrum of a periodic structure of a graphene-based frequency-tunable terahertz electromagnetic induction transparent device according to an embodiment of the present invention;
FIG. 5 is a schematic diagram of a simulated transmission spectrum of a periodic structure of a graphene-based frequency-tunable terahertz electromagnetic induction transparent device at different graphene Fermi levels according to an embodiment of the present invention;
in the figure, 1, a periodic unit structure; 2. a single layer graphene film; 3. a silicon dioxide substrate; 4. a U-shaped open loop metal strip; 5. a concave-like metal strip.
Detailed Description
In order to make the technical solutions of the present invention better understood, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It should be noted that the terms "first," "second," and the like in the description and claims of the present invention and in the drawings described above are used for distinguishing between similar elements and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used is interchangeable under appropriate circumstances such that the embodiments of the invention described herein are capable of operation in sequences other than those illustrated or described herein. Furthermore, the terms "comprises," "comprising," and "having," and any variations thereof, are intended to cover a non-exclusive inclusion, such that a process, method, system, article, or apparatus that comprises a list of steps or elements is not necessarily limited to those steps or elements expressly listed, but may include other steps or elements not expressly listed or inherent to such process, method, article, or apparatus.
The invention is described in further detail below with reference to the accompanying drawings:
referring to fig. 1, a graphene-based frequency-tunable terahertz electromagnetic induction transparent device according to an embodiment of the present invention includes: a substrate (illustratively, a silicon dioxide substrate 3); a single-layer graphene film 2 is arranged above the substrate; the concave-like metal strip 5 and the U-shaped opening annular metal strip 4 are positioned above the single-layer graphene film 2 and are distributed periodically; the concave-like metal strips 5 are symmetrically distributed in the U-shaped opening annular metal strip 4.
In the embodiment of the invention, the integral structure of the frequency-adjustable terahertz electromagnetic induction transparent device is formed by a plurality of structural unit periods, and the area of each structural unit is 10 micrometers multiplied by 10 micrometers. Illustratively, each structural unit is composed of a silicon dioxide substrate 3, a single-layer graphene film 2 above the silicon dioxide substrate 3, a concave-like metal strip 5 and a U-shaped open-loop metal strip 4.
In the preferred embodiment of the present invention, the thickness of the silicon dioxide substrate 3 is 1 μm, and the thickness of the concave-like metal strip 5 and the U-shaped open loop metal strip 4 is 0.2 μm.
Preferably, the line width of the U-shaped opening annular metal strip 4 is 0.4 μm; the length of the left arm and the right arm is 7 mu m; the length of the connecting part between the left arm and the right arm is 7.5 μm, and the length from the lower boundary of the EIT structural unit is 0.4 μm.
Preferably, the width of the concave-like metal strip 5 is 0.2 μm; one arm with a notch has a length of 4.05 μm; the length of the arm with the gap from the bottom of the concave-like metal strip 5 is 0.2 mu m; the distance between the two arms was 0.8 μm; the distance between the two concave-like metal strips 5 is 0.2 μm.
Preferably, the length of the concave-like metal strip 5 from the U-shaped opening annular metal strip 4 is 0.2 mu m; the length of the bottom of the concave-like metal strip 5 from the connecting part between the left arm and the right arm of the U-shaped open annular metal strip 4 is 0.2 mu m.
The principle analysis of the invention comprises the following steps: graphene is a two-dimensional material with excellent photoelectric characteristics, and the fermi level of graphene can be changed by applying voltage and changing the optical doping concentration, so that the conductivity of graphene is changed. According to the characteristic, the graphene material is integrated into the metamaterial structure, so that active EIT regulation can be well realized. The invention discloses a frequency-adjustable terahertz electromagnetic induction transparent device based on graphene, which is used for adjusting and controlling the working frequency of a transparent window of an EIT structure by changing the Fermi level of the graphene, namely realizing frequency adjustment. The unit structure of the EIT periodic structure comprises a U-shaped open annular metal strip, a concave-like metal strip, a substrate and a single-layer graphene arranged above the substrate. The U-shaped opening annular metal strip and the two similar concave metal strips are made of silver or other noble metals, the substrate material below the graphene is made of silicon dioxide, and a graphene film is sandwiched between the substrate and the contact surface of the periodic metal strip structure. The U-shaped opening annular metal strip and the two concave-like metal strips are coupled with each other to generate a stable EIT effect. Active regulation of EIT based on graphene is realized by changing the Fermi level of graphene, and has higher efficiency and feasibility compared with passive regulation realized by changing the geometric dimension in the previous research.
The frequency regulation and control method of the embodiment of the invention specifically comprises the following steps:
applying voltage to the graphene to change the Fermi level of the graphene, so that the electromagnetically induced transparent working frequency is changed; illustratively, as the voltage increases, its operating frequency decreases.
To sum up, the embodiment of the invention discloses a frequency-adjustable terahertz electromagnetic induction transparent device based on graphene, which comprises a silicon dioxide substrate, a single-layer graphene film on the silicon dioxide substrate, concave-like metal strips and U-shaped opening annular metal strips, wherein the concave-like metal strips and the U-shaped opening annular metal strips are located above the single-layer graphene and are distributed periodically, and the concave-like metal strips are distributed in the U-shaped opening annular metal strips in a left-right symmetrical mode. Active control EIT can be realized by integrating the graphene film into the metamaterial structure, namely the Fermi level of the graphene is changed to control the working frequency of a transparent window of the EIT structure, so that the frequency can be adjusted, and the graphene film can be used in the fields of sensing, high-speed slow light modulation and the like.
According to the frequency-adjustable terahertz electromagnetic induction transparent device structure based on graphene, simulation is performed through COMSOL multi-physical-field electromagnetic simulation software, firstly, a single U-shaped opening annular metal strip structure and a single concave-like metal strip structure are simulated, and finally, active regulation and control on the working frequency of an EIT transparent window are verified through simulation on periodic structures of terahertz electromagnetic induction transparent devices under different graphene Fermi levels.
Referring to fig. 1 and 2, fig. 1 and 2 are a schematic diagram of a three-dimensional structure and a schematic diagram of a top layer structure of a frequency-tunable terahertz electromagnetic induction transparent device based on graphene disclosed in this embodiment, and an overall structure of the device is composed of a plurality of periodic unit structures 1, including a substrate made of silicon dioxide, a single-layer graphene film 2 covering the substrate, and a U-shaped open annular metal strip 4 and a concave-like metal strip 5 made of metallic silver.
In the unit structure, a U-shaped opening annular metal strip 4 is close to the lower boundary position of the unit structure, two concave-like metal strips 5 are symmetrically distributed in the U-shaped opening annular metal strip 4 along the x axis, and the single-layer graphene Fermi energy level [ mu ] c is 0.2 eV; the periodic side length p of the unit structure is 10 mu m; the thickness H of the silica substrate 3 is 1 μm; the thicknesses H1 of the concave-like metal strip 5 and the U-shaped open annular metal strip 4 are 0.2 mu m; the line width m of the U-shaped opening annular metal strip 4 is 0.4 μm; the left and right arm length y1 is 7 μm; the length x1 of the connecting part between the left arm and the right arm is 7.5 μm; the width w of the concave-like metal strip 5 is 0.2 μm; the length y2 of one notched arm is 4.05 μm; the length y3 of the arm with the gap from the bottom of the concave-like metal strip 5 is 0.2 μm; the distance x2 between the two arms of the concave-like metal strip 5 is 0.8 μm; the distance s between the two concave-like metal strips 5 is 0.2 μm; the length x0 of the left and right distance U-shaped opening annular metal strip 4 of the concave-like metal strip 5 is 0.2 mu m; the length y0 of the connecting part between the bottom of the concave-like metal strip 5 and the left and right arms of the U-shaped open annular metal strip 4 is 0.2 mu m; the U-shaped open-loop metal strip 4 has a length y4 of 0.4 μm from the lower boundary of the EIT structural unit.
As shown in fig. 1, incident terahertz waves in the x-axis polarization direction are perpendicularly incident to the structure surface along the z-direction. The EIT metamaterial is in a bright-dark coupling mode, the U-shaped opening annular metal strip 4 structure is in a bright mode, the concave-like metal strip 5 structure is in a dark mode, and the EIT effect is caused by a near-field coupling effect between the bright mode and the dark mode.
When the incident terahertz wave in the x-axis polarization direction is perpendicularly incident along the z direction to the unit structure of only the U-shaped open annular metal strip 4 and the unit structure of only the concave-like metal strip 5 when the graphene fermi level μ c is 0.2eV, the transmission spectra of the unit structure of only the U-shaped open annular metal strip 4 and the unit structure of only the concave-like metal strip 5 are shown in fig. 3, and the resonance frequencies thereof are f 1-5.61 THz and f 2-5.72 THz, respectively.
On the basis of the above, the unit structure with only the U-shaped open ring-shaped metal strip 4 and the unit structure with only the concave-like metal strip 5 are combined together, the transmission spectrum of which is shown in fig. 4, a transparent peak appears between two resonance frequency points (f3 ═ 5.11THz, f4 ═ 6.59THz), the position of the transparent peak is the operating frequency point of the transparent window (f5 ═ 6.19THz), and the transparency of the transparent peak is about 90%, that is, the EIT effect appears.
In order to further explore the performance of the EIT device, transmission spectra of different graphene Fermi levels are verified through numerical simulation and experimental measurement.
FIG. 5 is a simulation of the periodic structure at different graphene Fermi levels, with the graphene Fermi level μ c increasing from 0.2eV to 1.0 eV. When the graphene fermi level is 0.2eV, the transparent window operating frequency of EIT is 6.23 THz. The transparent window operating frequency of EIT shifts from 6.08THz to 5.61THz as the graphene fermi level increases from 0.4eV to 1.0 eV. Therefore, as the graphene fermi level increases, the transparent window operating frequency shifts to a low frequency, but the EIT resonance amplitudes at different graphene fermi levels are substantially the same. As can be seen from the figure, the frequency-adjustable terahertz electromagnetic induction transparent device based on the graphene has the characteristic of actively tuning the frequency.
In the unit structure of the device, the concave-like metal strips and the U-shaped opening annular metal strips are located above the single-layer graphene and are distributed periodically, and the concave-like metal strips are distributed in the U-shaped opening annular metal strips in a bilateral symmetry mode. Compared with the prior art, the invention has the following advantages: (1) a new device structure model is provided, namely a U-shaped opening annular strip and a concave-like strip; (2) by integrating single-layer graphene into the THz metamaterial composed of a silicon dioxide substrate and a metal strip, the adjustable electromagnetic induction transparency phenomenon is realized in the THz frequency band; (3) the conductivity of the graphene is changed by changing the Fermi level of the graphene, so that the working frequency of the EIT transparent window is adjusted.
Finally, it should be noted that: the above embodiments are only for illustrating the technical solutions of the present invention and not for limiting the same, and although the present invention is described in detail with reference to the above embodiments, those of ordinary skill in the art should understand that: modifications and equivalents may be made to the embodiments of the invention without departing from the spirit and scope of the invention, which is to be covered by the claims.
Claims (10)
1. A frequency-tunable terahertz electromagnetic induction transparent device is characterized by comprising: the graphene film comprises a substrate, a single-layer graphene film (2), n U-shaped open annular metal strips (4) and 2n concave-like metal strips (5); wherein n is an integer greater than or equal to 2;
the single-layer graphene film (2) is arranged on the substrate; the n U-shaped open annular metal strips (4) are periodically arranged on the single-layer graphene film (2);
two similar concave metal strips (5) are symmetrically arranged in each U-shaped opening annular metal strip (4), and the U-shaped opening annular metal strip (4) and the two similar concave metal strips (5) are coupled with each other to generate an EIT effect.
2. The frequency tunable terahertz electromagnetic induction transparent device as claimed in claim 1, wherein the opening direction of the U-shaped open ring-shaped metal strip (4) is consistent with the notch direction of the concave-like metal strip (5).
3. The frequency-tunable terahertz electromagnetic induction transparent device as claimed in claim 1, wherein the whole structure of the frequency-tunable terahertz electromagnetic induction transparent device is composed of a plurality of periodic unit structures (1); each U-shaped opening annular metal strip (4) is combined with 2 concave-like metal strips (5) in the U-shaped opening annular metal strip, and the single-layer graphene film (2) and the substrate below the U-shaped opening annular metal strip form a periodic unit structure (1).
4. The frequency tunable terahertz electromagnetic induction transparent device as claimed in claim 3, wherein the area of each periodic unit structure (1) is 10 μm x 10 μm; in each periodic unit structure (1), the width of the U-shaped opening annular metal strip (4) is 0.4 mu m; the length of the left arm and the length of the right arm are both 7 mu m; the length of a connecting arm between the left arm and the right arm is 7.5 mu m, and the length of the connecting arm from the preset lower boundary of the periodic unit structure (1) is 0.4 mu m;
the width of the concave-like metal strip (5) is 0.2 mu m; the connection between the left middle arm and the right middle arm of the concave-like metal strip (5) is disconnected, gaps are arranged between the left middle arm and the bottom connecting arm, the lengths of the two middle arms are both 4.05 micrometers, and the lengths of the gaps are both 0.2 micrometers; the tops of the left and right side arms of the concave-like metal strip (5) are respectively connected with the tops of the left and right middle arms, the bottoms of the left and right side arms are respectively connected with the left and right ends of the bottom connecting arm, and the distance between the left and right side arms and the left and right middle arms is 0.8 mu m;
the two concave metal strips (5) in the U-shaped opening annular metal strip (4) are respectively a first concave metal strip and a second concave metal strip; the distance between the right arm of the first concave metal strip and the left arm of the second concave metal strip is 0.2 μm; the distance between the left arm of the first concave metal strip and the left arm of the U-shaped open annular metal strip (4) is 0.2 mu m; the distance between the right arm of the second concave metal strip and the right arm of the U-shaped open annular metal strip (4) is 0.2 mu m; the distances between the connecting arms at the bottoms of the first concave metal strip and the second concave metal strip and the connecting arms of the U-shaped open annular metal strip (4) are both 0.2 mu m.
5. The transparent device for frequency tunable terahertz electromagnetic induction according to claim 4, wherein the substrate has a thickness of 1 μm; the thicknesses of the concave-like metal strip (5) and the U-shaped opening annular metal strip (4) are 0.2 mu m.
6. The frequency tunable terahertz electromagnetic induction transparent device according to claim 1, wherein the frequency tunable terahertz electromagnetic induction transparent device is in a bright-dark coupling mode, the U-shaped open annular metal strip (4) is in a bright mode, and the concave-like metal strip (5) is in a dark mode.
7. The frequency tunable terahertz electromagnetic induction transparent device according to claim 1, wherein the substrate is a silicon dioxide substrate (3).
8. The frequency-tunable terahertz electromagnetic induction transparent device as claimed in claim 1, wherein the U-shaped open ring-shaped metal strip (4) and the concave-like metal strip (5) are made of noble metals.
9. The frequency regulation and control method of the frequency-tunable terahertz electromagnetic induction transparent device as claimed in claim 1, characterized by comprising the following steps:
the Fermi level of the single-layer graphene film is changed by applying voltage, and frequency regulation of the frequency-adjustable terahertz electromagnetic induction transparent device is realized.
10. The application of the frequency-tunable terahertz electromagnetic induction transparent device as claimed in claim 1, which is used for sensing and high-speed slow light modulation.
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