CN113948871B - Frequency-adjustable terahertz electromagnetic induction transparent device, frequency regulation method and application thereof - Google Patents
Frequency-adjustable terahertz electromagnetic induction transparent device, frequency regulation method and application thereof Download PDFInfo
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- CN113948871B CN113948871B CN202111144829.5A CN202111144829A CN113948871B CN 113948871 B CN113948871 B CN 113948871B CN 202111144829 A CN202111144829 A CN 202111144829A CN 113948871 B CN113948871 B CN 113948871B
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Abstract
The invention discloses a frequency-adjustable terahertz electromagnetic induction transparent device, a frequency regulation method and application thereof, wherein the frequency-adjustable terahertz electromagnetic induction transparent device comprises: the device comprises a substrate, a single-layer graphene film, n U-shaped opening annular metal strips and 2n concave-like metal strips; wherein n is an integer of 2 or more; the single-layer graphene film is arranged on the substrate; the n U-shaped opening annular metal strips are periodically arranged on the single-layer graphene film; two similar concave metal strips are symmetrically arranged in each U-shaped opening annular metal strip, and the U-shaped opening annular metal strips and the two similar concave metal strips are mutually coupled to generate an EIT effect. According to the invention, the transparent window working frequency of the EIT structure can be regulated and controlled by changing the Fermi level of the graphene, so that the frequency can be regulated, and compared with the passive regulation and control realized by changing the geometric dimension, the transparent window structure has higher efficiency and feasibility.
Description
Technical Field
The invention belongs to the technical field of terahertz metamaterial functional devices, and particularly relates to a terahertz electromagnetic induction transparent device with adjustable frequency, and a frequency regulation method and application thereof.
Background
Electromagnetic induction transparency (Electromagnetically induced transparency, EIT) refers to the quantum destructive interference effect generated in a specific atomic energy level structure in a quantum mechanical three-level atomic system, so that the transmission of electromagnetic waves by a material is changed, namely a narrow transparent window is formed in a wide absorption spectrum. This phenomenon is always accompanied by extreme changes in the dispersion characteristics and is therefore potentially valuable in many applications such as slow light and nonlinear effects.
However, the implementation of conventional quantum EIT requires complex conditions such as optical pumping temperature and low temperature, which severely limits its practical application, especially in on-chip integration. For the traditional electromagnetic induction transparent device, the working frequency of the transparent window can only be passively regulated, namely, the working frequency of the electromagnetic induction transparent window can only be changed by changing the geometric dimension of the structure, so that the practical application of EIT in the fields of sensing, high-speed slow light modulation and the like is limited.
Recently, the advent of two-dimensional metamaterials has enabled manipulation of light interactions with matter in artificially designed structures, creating the possibility of achieving EIT effects in classical optical systems.
Disclosure of Invention
The invention aims to provide a terahertz electromagnetic induction transparent device with adjustable frequency, and a frequency regulation method and application thereof, so as to solve one or more technical problems. The invention particularly provides a graphene-based frequency-adjustable terahertz electromagnetic induction transparent device, wherein a unit structure of an EIT periodic structure comprises a U-shaped opening annular metal strip, a concave-like metal strip, a substrate and single-layer graphene arranged above the substrate. In the method, the transparent window working frequency of the EIT structure can be regulated and controlled by changing the Fermi level of the graphene, so that the frequency can be regulated, and compared with the method for realizing passive regulation and control by changing the geometric dimension, the method has higher efficiency and feasibility.
In order to achieve the above purpose, the invention adopts the following technical scheme:
the invention relates to a terahertz electromagnetic induction transparent device with adjustable frequency, which comprises: the device comprises a substrate, a single-layer graphene film, n U-shaped opening annular metal strips and 2n concave-like metal strips; wherein n is an integer of 2 or more;
the single-layer graphene film is arranged on the substrate; the n U-shaped opening annular metal strips are periodically arranged on the single-layer graphene film;
two similar concave metal strips are symmetrically arranged in each U-shaped opening annular metal strip, and the U-shaped opening annular metal strips and the two similar concave metal strips are mutually coupled to generate an EIT effect.
A further improvement of the invention is that the opening direction of the U-shaped open annular metal strip coincides with the recess direction of the concave-like metal strip.
The invention is further improved in that the integral structure of the frequency-adjustable terahertz electromagnetic induction transparent device consists of a plurality of periodic unit structures; wherein, each U-shaped opening annular metal strip combines 2 concave-like metal strips therein, and a single-layer graphene film and a substrate below the concave-like metal strips form a periodic unit structure.
A further improvement of the present invention is that the area of each periodic unit structure is 10 μm×10 μm; in each periodic unit structure, the width of the U-shaped opening annular metal strip is 0.4 mu m; the lengths of the left arm and the right arm are 7 mu m; the length of the connecting arm between the left arm and the right arm is 7.5 mu m, and the length of the connecting arm from the preset lower boundary of the periodic unit structure is 0.4 mu m;
the width of the concave-like metal strip is 0.2 mu m; the connection between the left middle arm and the right middle arm of the concave-like metal strip is disconnected, a gap is arranged between the left middle arm and the right middle arm and the bottom connecting arm, the lengths of the two middle arms are 4.05 mu m, and the lengths of the gaps are 0.2 mu m; the tops of the left side arm and the right side arm of the concave-like metal strip are respectively connected with the tops of the left middle arm and the right middle arm, the bottoms of the left side arm and the right side arm are respectively connected with the left end and the right end of the bottom connecting arm, and the distances between the left side arm and the right side arm and between the left side arm and the right middle arm are respectively 0.8 mu m;
the two similar concave metal strips in the U-shaped opening annular metal strip are a first similar concave metal strip and a second similar concave metal strip respectively; the distance between the right side arm of the first type concave metal strip and the left side arm of the second type concave metal strip is 0.2 mu m; the distance between the left side arm of the first concave metal strip and the left arm of the U-shaped opening annular metal strip is 0.2 mu m; the distance between the right side arm of the second concave metal strip and the right arm of the U-shaped opening annular metal strip is 0.2 mu m; the distance between the bottom connecting arms of the first concave metal strips and the second concave metal strips and the connecting arms of the U-shaped opening annular metal strips is 0.2 mu m.
A further improvement of the invention is that the thickness of the substrate is 1 μm; the thickness of the concave-like metal strip and the U-shaped opening annular metal strip is 0.2 mu m.
The invention further improves that the frequency-adjustable terahertz electromagnetic induction transparent device is in a light-dark coupling mode, the U-shaped opening annular metal strip is in a light mode, and the concave-like metal strip is in a dark mode.
A further improvement of the present invention is that the substrate is a silica substrate.
The invention further improves that the U-shaped opening annular metal strip and the concave-like metal strip are made of noble metal.
The invention discloses a frequency regulation and control method of a terahertz electromagnetic induction transparent device with adjustable frequency, which comprises the following steps:
the fermi level of the single-layer graphene film is changed in a voltage application mode, so that the frequency regulation and control of the terahertz electromagnetic induction transparent device with the adjustable frequency are realized.
The application of the terahertz electromagnetic induction transparent device with the adjustable frequency is used for sensing and high-speed slow light modulation.
Compared with the prior art, the invention has the following beneficial effects:
the invention discloses a graphene-based frequency-adjustable terahertz electromagnetic induction transparent device, which provides a device structure model of a U-shaped opening annular strip and a concave-like strip; the unit structure of the EIT periodic structure comprises a U-shaped opening annular metal strip, a concave-like metal strip, a substrate and single-layer graphene arranged above the substrate; the transparent window working frequency of the EIT structure is regulated and controlled by changing the Fermi level of the graphene, namely the frequency is adjustable.
According to the invention, the materials used for the U-shaped opening annular metal strip and the two concave-like metal strips can be silver or other noble metals, and the substrate material arranged below the graphene can be silicon dioxide, namely a graphene film is clamped on the contact surface of the substrate and the periodic metal strip structure; the U-shaped open annular metal strip and the two concave-like metal strips are mutually coupled to generate a stable EIT effect. Core point summaries, by integrating single-layer graphene into a THz metamaterial composed of a silicon dioxide substrate and a metal strip, tunable electromagnetic induction transparency phenomenon is achieved in the THz frequency band.
In the method, the EIT active regulation and control based on the graphene is realized by changing the Fermi level of the graphene, and compared with the passive regulation and control realized by changing the geometric dimension in the previous research, the EIT active regulation and control based on the graphene has higher efficiency and feasibility. The core is summarized, and the fermi energy level of the graphene is changed, so that the conductivity of the graphene is changed, and the working frequency of the EIT transparent window is adjusted.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the following description of the embodiments or the drawings used in the description of the prior art will make a brief description; it will be apparent to those of ordinary skill in the art that the drawings in the following description are of some embodiments of the invention and that other drawings may be derived from them without undue effort.
Fig. 1 is a three-dimensional schematic diagram of a periodic structure of a graphene-based frequency-adjustable terahertz electromagnetic induction transparent device according to an embodiment of the invention;
fig. 2 is a schematic diagram of a top layer of a graphene-based frequency-adjustable terahertz electromagnetic induction transparent device unit structure according to an embodiment of the invention;
FIG. 3 is a schematic illustration of simulated transmission spectra of a single U-shaped open annular metal strip structure and simulated transmission spectra of a single concave-like metal strip structure in an embodiment of the present invention;
fig. 4 is a schematic diagram of a simulated transmission spectrum of a periodic structure of a graphene-based frequency-adjustable terahertz electromagnetic induction transparent device according to an embodiment of the present invention;
fig. 5 is a schematic diagram of simulated transmission spectrum of a periodic structure of a graphene-based frequency-adjustable terahertz electromagnetic induction transparent device at different graphene fermi levels according to an embodiment of the present invention;
in the figure, 1, a periodic unit structure; 2. a monolayer graphene film; 3. a silicon dioxide substrate; 4. a U-shaped open annular metal strip; 5. a concave-like metal strip.
Detailed Description
In order that those skilled in the art will better understand the present invention, a technical solution in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in which it is apparent that the described embodiments are only some embodiments of the present invention, not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the present invention without making any inventive effort, shall fall within the scope of the present invention.
It should be noted that the terms "first," "second," and the like in the description and the claims of the present invention and the above figures are used for distinguishing between similar objects and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used may be interchanged where appropriate such that the embodiments of the invention described herein may be implemented in sequences other than those illustrated or otherwise described herein. Furthermore, the terms "comprises," "comprising," and "having," and any variations thereof, are intended to cover a non-exclusive inclusion, such that a process, method, system, article, or apparatus that comprises a list of steps or elements is not necessarily limited to those steps or elements expressly listed but may include other steps or elements not expressly listed or inherent to such process, method, article, or apparatus.
The invention is described in further detail below with reference to the attached drawing figures:
referring to fig. 1, a graphene-based frequency-adjustable terahertz electromagnetic induction transparent device in an embodiment of the invention includes: a substrate (exemplary, silica substrate 3); a single-layer graphene film 2 is arranged above the substrate; the concave-like metal strips 5 and the U-shaped opening annular metal strips 4 are positioned above the single-layer graphene film 2 and are distributed periodically; the concave-like metal strips 5 are symmetrically distributed inside the U-shaped opening annular metal strip 4.
In the embodiment of the invention, the whole structure of the frequency-adjustable terahertz electromagnetic induction transparent device is formed by a plurality of structure unit periods, and the area of the structure unit is 10 mu m multiplied by 10 mu m. Illustratively, each structural unit is composed of a silicon dioxide substrate 3, a single-layer graphene film 2 over the silicon dioxide substrate 3, a concave-like metal strip 5, and a U-shaped open annular metal strip 4.
In the preferred embodiment of the present invention, the thickness of the silica substrate 3 is 1 μm, and the thickness of the concave-like metal strip 5 and the U-shaped opening ring-shaped metal strip 4 is 0.2 μm.
The preferred line width of the U-shaped opening annular metal strip 4 is 0.4 mu m; the length of the left arm and the right arm is 7 mu m; the length of the connecting portion between the left and right arms was 7.5. Mu.m, and the length from the lower boundary of the EIT structural unit was 0.4. Mu.m.
The preferred width of the concave-like metal strip 5 is 0.2 μm; one arm with a notch has a length of 4.05 μm; the arm distance of the notch is 0.2 mu m from the bottom of the concave metal strip 5; the distance between the two arms is 0.8 μm; the distance between the two concave-like metal strips 5 is 0.2 μm.
The preferred length of the concave-like metal strip 5 from the left side to the right side of the U-shaped opening annular metal strip 4 is 0.2 mu m; the length of the connecting part of the bottom of the concave-like metal strip 5 from the middle of the left and right arms of the U-shaped opening ring-shaped metal strip 4 is 0.2 μm.
The principle analysis of the invention comprises the following steps: graphene is a two-dimensional material having excellent photoelectric characteristics, and the fermi level of the graphene can be changed by applying a voltage, changing the optical doping concentration, and the like, resulting in a change in conductivity thereof. According to the characteristic, the active EIT regulation and control can be well realized by integrating the graphene material into the metamaterial structure. The invention discloses a graphene-based frequency-adjustable terahertz electromagnetic induction transparent device, which regulates and controls the working frequency of a transparent window of an EIT structure by changing the Fermi level of graphene, namely realizes frequency adjustment. The unit structure of the EIT periodic structure comprises a U-shaped opening annular metal strip, a concave-like metal strip, a substrate and single-layer graphene arranged above the substrate. The materials used for the U-shaped opening annular metal strip and the two concave-like metal strips can be silver or other noble metals, and the base material arranged below the graphene can be silicon dioxide, namely a graphene film is clamped on the contact surface of the base and the periodic metal strip structure. The U-shaped open annular metal strip and the two concave-like metal strips are mutually coupled to generate a stable EIT effect. Graphene-based EIT active modulation is achieved by changing the fermi level of graphene, with higher efficiency and feasibility than passive modulation achieved by changing geometry in previous studies.
The frequency regulation method of the embodiment of the invention specifically comprises the following steps:
applying voltage to the graphene to change the Fermi level of the graphene, so as to change the working frequency of electromagnetic induction transparency; illustratively, as the voltage increases, its operating frequency decreases.
In summary, the embodiment of the invention discloses a graphene-based frequency-adjustable terahertz electromagnetic induction transparent device, which comprises a silicon dioxide substrate, a single-layer graphene film above the silicon dioxide substrate, concave-like metal strips and U-shaped opening annular metal strips, wherein the concave-like metal strips are positioned above the single-layer graphene and are distributed periodically, and the concave-like metal strips are distributed in the U-shaped opening annular metal strips in a bilateral symmetry manner. The graphene film is integrated into the metamaterial structure, so that the EIT of active regulation and control can be realized, namely the Fermi energy level of the graphene is changed to control the working frequency of a transparent window of the EIT structure, and the frequency is adjustable, so that the graphene film can be used in the fields of sensing, high-speed slow light modulation and the like.
According to the graphene-based frequency-adjustable terahertz electromagnetic induction transparent device structure, simulation is carried out through COMSOL multi-physical field electromagnetic simulation software, firstly, a single U-shaped opening annular metal strip structure and a single concave-like metal strip structure are simulated, and finally, active regulation and control on the working frequency of an EIT transparent window are verified through simulation on terahertz electromagnetic induction transparent device periodic structures under different graphene fermi levels.
Referring to fig. 1 and 2, fig. 1 and 2 are a three-dimensional structure schematic diagram and a top layer structure schematic diagram of a frequency-adjustable terahertz electromagnetic induction transparent device disclosed in this embodiment, and the whole structure of the device is composed of a plurality of periodic unit structures 1, including a substrate made of silicon dioxide, a single-layer graphene film 2 is covered on the substrate, and a U-shaped opening annular metal strip 4 and a concave-like metal strip 5 made of metal silver are formed on the substrate.
In the unit structure, the U-shaped opening annular metal strip 4 is near the lower boundary position of the unit structure, two concave-like metal strips 5 are symmetrically distributed along the x-axis in the U-shaped opening annular metal strip 4, and the single-layer graphene fermi level μc=0.2eV; the period side length p=10μm of the unit structure; the thickness h=1 μm of the silica substrate 3; the thickness h1=0.2 μm of the concave-like metal strip 5 and the U-shaped opening ring-shaped metal strip 4; line width m=0.4 μm of U-shaped open annular metal strip 4; left and right arm length y1=7μm; the length x1=7.5 μm of the connecting portion in the middle of the left and right arms; the width w=0.2 μm of the concave-like metal strip 5; the length y2=4.05 μm of one arm with a gap; the arm distance of the notch is y3 = 0.2 μm from the bottom of the concave metal strip 5; the distance between the two arms of the concave-like metal strip 5 x2=0.8 μm; the distance s=0.2 μm between the two concave-like metal strips 5; the length x0=0.2 μm of the concave-like metal strip 5 from the U-shaped opening ring-shaped metal strip 4; the length y0=0.2 μm of the connecting part of the bottom of the concave-like metal strip 5 from the middle of the left and right arms of the U-shaped opening ring-shaped metal strip 4; the U-shaped open annular metal strip 4 is spaced from the lower boundary length y4=0.4 μm of the EIT structural unit.
As shown in fig. 1, the incident terahertz wave in the x-axis polarization direction is perpendicularly incident on the structure surface along the z-direction. The EIT metamaterial is in a bright-dark coupling mode, the structure of the U-shaped opening annular metal strip 4 is in a bright mode, the structure of the concave-like metal strip 5 is in a dark mode, and the EIT effect is caused by a near-field coupling effect between the bright mode and the dark mode.
When the incident terahertz wave in the x-axis polarization direction is vertically incident to the cell structure of only the U-shaped open ring-shaped metal strip 4 and the cell structure of only the concave-like metal strip 5 in the z-direction when the graphene fermi level μc=0.2 eV, the transmission spectra of the cell structure of only the U-shaped open ring-shaped metal strip 4 and the cell structure of only the concave-like metal strip 5 are as shown in fig. 3, with the resonance frequencies f1=5.61 THz and f2=5.72 THz, respectively.
On the basis of the above, the unit structure of the U-shaped open annular metal strip 4 and the unit structure of the concave-like metal strip 5 are combined together, the transmission spectrum of which is shown in fig. 4, a transparent peak appears between two resonance frequency points (f3=5.11thz, f4=6.59 THz), the position of the transparent peak is the working frequency point (f5=6.19 THz) of the transparent window, and the transparency of the transparent peak is about 90%, that is, the EIT effect appears.
In order to further explore the performance of the EIT device of the invention, transmission spectra at different graphene fermi levels were verified by numerical simulation and experimental measurements.
Fig. 5 is a simulation result of a periodic structure at different graphene fermi levels, with the graphene fermi level μc increasing from 0.2eV to 1.0eV. When the graphene fermi level is 0.2eV, the transparent window operating frequency of EIT is 6.23THz. When the graphene fermi level increases from 0.4eV to 1.0eV, the transparent window operating frequency of EIT translates from 6.08THz to 5.61THz. Thus, as the graphene fermi level increases, the transparent window operating frequency shifts to a lower frequency, but the EIT resonance amplitude at different graphene fermi levels is substantially the same. From the graph, the frequency-adjustable terahertz electromagnetic induction transparent device based on graphene has the characteristic of actively tuning the frequency.
In summary, the disclosure provides a graphene-based frequency-adjustable terahertz electromagnetic induction transparent device, in which a concave-like metal strip and a U-shaped opening annular metal strip are located above a single-layer graphene and are distributed periodically, and the concave-like metal strip is distributed left-right symmetrically in the U-shaped opening annular metal strip. Compared with the prior art, the invention has the following advantages: (1) A new device structure model is provided, namely a U-shaped opening annular strip and a similar concave strip; (2) The adjustable electromagnetic induction transparency phenomenon is realized in the THz frequency band by integrating single-layer graphene into a THz metamaterial composed of a silicon dioxide substrate and a metal strip; (3) And the fermi energy level of the graphene is changed, so that the conductivity of the graphene is changed, and the working frequency of the EIT transparent window is adjusted.
Finally, it should be noted that: the above embodiments are only for illustrating the technical aspects of the present invention and not for limiting the same, and although the present invention has been described in detail with reference to the above embodiments, it should be understood by those of ordinary skill in the art that: modifications and equivalents may be made to the specific embodiments of the invention without departing from the spirit and scope of the invention, which is intended to be covered by the claims.
Claims (3)
1. A frequency tunable terahertz electromagnetic induction transparent device, comprising: the device comprises a substrate, a single-layer graphene film (2), n U-shaped opening annular metal strips (4) and 2n concave-like metal strips (5); wherein n is an integer of 2 or more;
the single-layer graphene film (2) is arranged on the substrate; the n U-shaped opening annular metal strips (4) are periodically arranged on the single-layer graphene film (2);
two concave-like metal strips (5) are symmetrically arranged in each U-shaped opening annular metal strip (4), and the U-shaped opening annular metal strips (4) and the two concave-like metal strips (5) are mutually coupled to generate an EIT effect;
wherein the opening direction of the U-shaped opening annular metal strip (4) is consistent with the notch direction of the concave-like metal strip (5); the frequency-adjustable terahertz electromagnetic induction transparent device is in a bright-dark coupling mode, the U-shaped opening annular metal strip (4) is in a bright mode, and the concave-like metal strip (5) is in a dark mode; the substrate is a silicon dioxide substrate (3); the U-shaped opening annular metal strip (4) and the concave-like metal strip (5) are made of noble metal;
the integral structure of the terahertz electromagnetic induction transparent device with the adjustable frequency consists of a plurality of periodic unit structures (1); wherein each U-shaped opening annular metal strip (4) is combined with 2 concave-like metal strips (5) therein, and a single-layer graphene film (2) and a substrate below the metal strips form a periodic unit structure (1);
the area of each periodic unit structure (1) is 10 μm×10 μm; in each periodic unit structure (1), the width of the U-shaped opening annular metal strip (4) is 0.4 mu m; the lengths of the left arm and the right arm are 7 mu m; the length of the connecting arm between the left arm and the right arm is 7.5 mu m, and the length of the connecting arm from the preset lower boundary of the periodic unit structure (1) is 0.4 mu m; the width of the concave-like metal strip (5) is 0.2 mu m; the connection between the left middle arm and the right middle arm of the concave-like metal strip (5) is disconnected, gaps are arranged between the left middle arm and the right middle arm and the bottom connecting arm, the lengths of the two middle arms are 4.05 mu m, and the lengths of the gaps are 0.2 mu m; the tops of the left side arm and the right side arm of the concave-like metal strip (5) are respectively connected with the tops of the left middle arm and the right middle arm, the bottoms of the left side arm and the right side arm are respectively connected with the left end and the right end of the bottom connecting arm, and the distance between the left side arm and the right side arm and the distance between the left middle arm and the right middle arm are 0.8 mu m; two similar concave metal strips (5) in the U-shaped opening annular metal strip (4) are respectively a first similar concave metal strip and a second similar concave metal strip; the distance between the right side arm of the first type concave metal strip and the left side arm of the second type concave metal strip is 0.2 mu m; the distance between the left side arm of the first concave metal strip and the left arm of the U-shaped opening annular metal strip (4) is 0.2 mu m; the distance between the right side arm of the second concave metal strip and the right arm of the U-shaped opening annular metal strip (4) is 0.2 mu m; the distance between the bottom connecting arm of the first concave metal strip and the bottom connecting arm of the second concave metal strip and the connecting arm of the U-shaped opening annular metal strip (4) is 0.2 mu m; the thickness of the substrate is 1 μm; the thickness of the concave-like metal strip (5) and the U-shaped opening annular metal strip (4) is 0.2 mu m.
2. A method for frequency modulation of a frequency tunable terahertz electromagnetic induction transparent device in accordance with claim 1, comprising the steps of:
the fermi level of the single-layer graphene film is changed in a voltage application mode, so that the frequency regulation and control of the terahertz electromagnetic induction transparent device with the adjustable frequency are realized.
3. Use of a frequency tunable terahertz electromagnetic induction transparent device as claimed in claim 1 for sensing, high speed slow light modulation.
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