CN113054440B - Double-control broadband THz absorber based on vanadium dioxide and graphene - Google Patents
Double-control broadband THz absorber based on vanadium dioxide and graphene Download PDFInfo
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- CN113054440B CN113054440B CN202110292944.0A CN202110292944A CN113054440B CN 113054440 B CN113054440 B CN 113054440B CN 202110292944 A CN202110292944 A CN 202110292944A CN 113054440 B CN113054440 B CN 113054440B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
- H01Q15/0006—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
- H01Q15/0086—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices having materials with a synthesized negative refractive index, e.g. metamaterials or left-handed materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
- H01Q15/0006—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
- H01Q15/0013—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective
- H01Q15/002—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective said selective devices being reconfigurable or tunable, e.g. using switches or diodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
- H01Q15/0006—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
- H01Q15/0013—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective
- H01Q15/0026—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective said selective devices having a stacked geometry or having multiple layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q17/00—Devices for absorbing waves radiated from an antenna; Combinations of such devices with active antenna elements or systems
- H01Q17/007—Devices for absorbing waves radiated from an antenna; Combinations of such devices with active antenna elements or systems with means for controlling the absorption
Abstract
A double-control broadband THz absorber based on vanadium dioxide and graphene is characterized in that: the absorber comprises a five-layer structure, and sequentially comprises the following components from the top layer to the bottom layer: the first layer is a vanadium dioxide resonance structure, the vanadium dioxide resonance structure is a square ring structure, the second layer is a dielectric layer, the third layer is a graphene resonance structure, the graphene resonance structure is a non-pattern structure, the fourth layer is a dielectric layer made of the same material as the second layer, and the fifth layer is a metal layer. The absorber has three absorption peaks in total in a working frequency band, wherein two low-frequency absorption peaks are generated by a dipole resonance effect excited by the vanadium dioxide resonance structure, and the third high-frequency absorption peak is generated by a high-order resonance effect excited by the graphene resonance structure. The working bandwidth of the absorber can be changed by respectively adjusting the conductivity of the vanadium dioxide or the chemical potential energy of the graphene. The absorption rate of the absorber can be adjusted by simultaneously adjusting the conductivity of the vanadium dioxide and the chemical potential energy of the graphene.
Description
Technical Field
The invention belongs to the technical field of terahertz metamaterial design, and particularly relates to a double-control broadband THz absorber based on vanadium dioxide and graphene.
Background
The terahertz (THz) wave is positioned in a frequency gap between the microwave and the infrared wave, and the frequency range of the THz wave is 0.1-10 THz. Due to the potential applications of THz waves in communication, biomedicine, safety, and the like, THz technology has attracted increasing attention. However, THz technology is still slow to develop, mainly because there is no material in nature that can interact directly with THz waves, resulting in the lack of THz-functional devices. The composite metamaterial composed of the structural units arranged periodically provides feasibility for the development and application of the THz device. Unlike natural materials, metamaterials can achieve certain electromagnetic properties, such as negative refractive index, perfect lens, perfect absorption, etc., by changing the structure of the resonant cells. Due to its unique electromagnetic properties, metamaterials have been used in the design of THz-functional devices, such as THz modulators, THz filters, THz absorbers, and the like. Among them, the THz absorber based on the metamaterial has great application value in the fields of stealth, detection, communication and the like, and has gradually become one of the research hotspots in the THz field. However, early THz absorbers were typically metamaterials based on metallic resonant structures, and their absorption properties were not adjustable after processing, resulting in significant limitations in their practical applications. Therefore, there is a need to design new metamaterial absorbers with tunable performance.
At present, the main method for designing a dynamically tunable THz absorber is to add a material with tunable optical properties (such as vanadium dioxide (VO)) into the absorber2) Graphene, liquid crystal, etc.). Wherein, VO2As a phase change material, the electrical conductivity of the material can change by 5 orders of magnitude in the phase change process, VO2The addition of the material can provide the absorber with the advantages of quick response, high modulation depth and the like. Graphene has unique mechanical, electromagnetic and optical properties, and the conductivity of graphene can be adjusted by chemical doping or applying bias voltage, so that graphene becomes an ideal material for constructing a tunable metamaterial absorber. However, most are based on VO2Or graphene absorbers generally suffer from narrow absorption bandwidth and single tuning function. Therefore, there is a need for further development of new broadband tunable absorbers to drive the development of THz technology.
Disclosure of Invention
The invention designs a double-control broadband THz absorber based on vanadium dioxide and graphene, which has the characteristics of broadband absorption, dynamic adjustability and polarization insensitivity.
The invention adopts the technical scheme that a double-control broadband THz absorber based on vanadium dioxide and graphene is designed. The absorber is composed of five layers of structures, and sequentially comprises the following components from a top layer to a bottom layer: the first layer is VO2A resonant structure of the VO2The resonance structure is a square annular structure, the second layer is a dielectric layer, the third layer is a graphene resonance structure, the graphene resonance structure is a non-pattern structure, the fourth layer is a dielectric layer made of the same material as the second layer, and the fifth layer is a metal layer.
Wherein, theVO2The external excitation of the resonant structure may be light, temperature and voltage.
Wherein the external excitation of the graphene resonant structure is a voltage.
The dielectric constant of the second layer and the dielectric constant of the fourth layer are 1-1.2.
Further, VO2The dielectric constant in the THz band can be described by Drude model as:
in the formula, epsilon∞12 and 5.75 × 1013rad/s are the high frequency dielectric constant and the oscillation frequency, respectively. Plasma frequency omegapThe relationship to conductivity σ is:
in the formula, σ0＝3×105S/m and ωp(σ0)＝1.4×1015rad/s。
Further, the conductivity of graphene can be expressed by the Kubo formula: sigmagr＝σintra+σinterWhere σ isintraAnd σinterIn-band conductivity and inter-band conductivity, respectively. According to the principle of Pouli incompatibility, due to photon energy
(μcIs the chemical potential of graphene), the inter-band conductivity is negligible compared to the in-band conductivity. Therefore, the conductivity of graphene can be simplified as:
in the formula, KBT, gamma, e and mucRespectively boltzmann constant, ambient temperature, and scattering rateThe elementary charge and the chemical potential energy,
is the reduced planck constant.
The double-control broadband THz absorber based on vanadium dioxide and graphene adopts VO2The resonant structure and the graphene resonant structure are used as resonators, and VO can be changed through light, temperature and voltage2The conductivity of the graphene or the change of the chemical potential energy of the graphene through an external excitation voltage can realize the dynamic regulation and control of the working bandwidth and the absorption rate.
The invention has the beneficial effects that: different from the prior art, the broadband adjustable absorber has the advantages of wide absorption band, various dynamic regulation and control modes, and flexible and adjustable working bandwidth and absorption rate.
Drawings
In order to more clearly describe the embodiments of the present invention in further detail, the drawings used in the embodiments will be briefly described below. It is to be noted herein that the drawings are designed solely for purposes of illustration of certain embodiments of the invention and are not intended as a definition of the limits of the invention.
Fig. 1 is a schematic structural diagram of embodiment 1 of the present invention, and the double-control broadband THz absorber based on vanadium dioxide and graphene is composed of a five-layer structure. The top layer to the bottom layer are sequentially as follows: the first layer is VO2A resonant structure of the VO2The resonance structure is a square annular structure, the second layer is a polymethacrylimide dielectric layer, the third layer is a graphene resonance structure, the graphene resonance structure is a non-pattern structure, the fourth layer is a polymethacrylimide dielectric layer, and the fifth layer is a metal layer.
Fig. 2 is an electric field distribution diagram at three resonance absorption peaks for example 1 of the present invention.
FIG. 3 shows VO in example 1 of the present invention2The conductivity is 200000 Siemens/m, and the absorption rate of graphene is 1 electron volt.
FIG. 4 shows different VOs in the case of graphene with a chemical potential of 1 eV in example 1 of the present invention2At the electrical conductivityThe absorption rate of (c).
FIG. 5 shows VO in example 1 of the present invention2Absorption rates under different graphene chemical potential energies when the conductivity is 200000 siemens/m.
FIG. 6 shows VO of example 1 of the present invention2The absorption rate under the common change of the conductivity and the chemical potential energy of the graphene.
Detailed Description
The design scheme in the embodiment of the invention is clearly and completely described below by combining the attached drawings in the embodiment; the described embodiments are only some of the embodiments of the present invention and are not meant to limit the scope of the present invention in any way.
Example 1
A unit structure of a double-control broadband THz absorber based on vanadium dioxide and graphene is composed of five layers, wherein the unit structure sequentially comprises the following components from the top layer to the bottom layer: VO (vacuum vapor volume)2The resonant structure 1 is made of a dielectric layer 2 made of polymethacrylimide, a graphene resonant structure 3, a dielectric layer 4 made of polymethacrylimide and a metal layer 5 made of gold, and is shown in the attached drawing 1. VO with unit structure period p of 98 microns and square ring shape2The resonant structure 1 has a side length l of 60 micrometers and a width w of 12 micrometers. VO (vacuum vapor volume)2Thickness h of the resonant structure 1vThickness h of dielectric layer 21Thickness h of dielectric layer 32And the thickness h of the metal layer 5gRespectively 0.17 microns, 17.1 microns, 22.9 microns, and 0.4 microns.
Fig. 2 is the electric field distribution at three resonance points in the present embodiment. Wherein, at 1.33THz, the electric field is mainly concentrated in VO2The upper side and the lower side of the resonance structure and the graphene resonance structure are used for electric dipole resonance; at 3.46THz, the electric field is mainly concentrated at VO2The upper side and the lower side of the resonant structure and the graphene resonant structure are respectively in an electric dipole resonance mode; at 5.26THz, VO is compared to the first two resonance points2The resonance structure and the graphene resonance structure have more discrete electric field distribution, and high-order resonance is generated. Therefore, the broadband absorption of the absorber is realized by the coupling of a plurality of resonance modes.
FIG. 3 shows that the chemical potential of graphene is 1 eV and VO in this embodiment2Absorption spectrum at a conductivity of 200000 siemens/m. As can be seen from fig. 3, the absorber has an absorption rate of greater than 90% and a relative bandwidth of 136.5% in the frequency range of 1.04THz to 5.51 THz.
FIG. 4 shows when VO is present2Changes from 200000 siemens/m to 200 siemens/m, the absorber changes from broadband absorption in the frequency range of 1.04THz to 5.51THz to narrow-band absorption with absorption peak at 4.76 THz. VO (vacuum vapor volume)2Can be adjusted by external stimuli such as light, temperature or voltage.
Fig. 5 shows that the frequency range of absorber broadband absorption changes from 1.04THz to 5.51THz to 1.18THz to 2.76THz when the chemical potential energy of graphene changes from 1 electron volt to 0 electron volt.
FIG. 6 shows when VO is present2The absorption rate of the absorber can be adjusted from 99% to 26% when the conductivity of (b) is changed from 200000 siemens/m to 200 siemens/m and the chemical potential of graphene is changed from 1 electron volt to 0 electron volt.
In conclusion, the invention provides a double-control broadband THz absorber based on vanadium dioxide and graphene. By mixing VO2The resonance structure is combined with the graphene resonance structure, so that the absorption bandwidth and adjustability of the absorber can be improved, and broadband absorption and adjustable working bandwidth and absorption rate are realized. The absorber has the advantages of wide absorption frequency band, various dynamic regulation and control modes, and adjustable working bandwidth and absorption rate.
The technical principle and specific examples applied to the invention are described above, and the equivalent or equivalent designs, modifications and the like made according to the conception of the invention should be included in the protection scope of the invention.
Claims (5)
1. The utility model provides a broadband adjustable absorber based on vanadium dioxide and graphite alkene which characterized in that: the broadband adjustable absorber comprises a five-layer structure, and the five-layer structure sequentially comprises the following components from the top layer to the bottom layer: the first layer is a vanadium dioxide square ring-shaped resonant structure, the second layer is a dielectric layer, the third layer is a non-pattern graphene resonant structure, the fourth layer is a dielectric layer which is the same as the second layer in material and different in thickness, and the fifth layer is a metal layer; the absorber has three absorption peaks in the working frequency band, the first two absorption peaks are mainly generated by the resonance action of a dipole excited by the first layer of vanadium dioxide resonance structure, the third absorption peak is mainly generated by the high-order resonance action excited by the third layer of graphene resonance structure, and the excited resonance can be respectively regulated and controlled by respectively regulating and controlling the conductivity of vanadium dioxide and the chemical potential energy of graphene, so that the regulation and control of the working bandwidth of the absorber are realized.
2. The broadband tunable absorber based on vanadium dioxide and graphene as claimed in claim 1, wherein: the absorber has three absorption peaks, wherein the first two absorption peaks are mainly generated by a vanadium dioxide resonant structure, the third absorption peak is mainly generated by a graphene resonant structure, and the absorption bandwidth is expanded by the superposition of the absorption peaks.
3. The broadband tunable absorber based on vanadium dioxide and graphene as claimed in claim 1, wherein: the first two absorption peaks are mainly generated by the resonance action of a dipole excited by the first layer of vanadium dioxide resonance structure, and the number of resonance absorption peaks can be changed by adjusting the conductivity of vanadium dioxide, so that the dynamic controllability of the working bandwidth of the absorber is realized.
4. The broadband tunable absorber based on vanadium dioxide and graphene as claimed in claim 1, wherein: the third absorption peak is mainly generated by a high-order resonance effect excited by the third-layer graphene resonance structure, the number of resonance absorption peaks can be changed by adjusting the chemical potential energy of the graphene, and the dynamic controllability of the working bandwidth of the absorber is realized.
5. The broadband tunable absorber based on vanadium dioxide and graphene as claimed in claim 1, wherein: the number and the absorptivity of resonance absorption peaks are changed by simultaneously adjusting the conductivity of the vanadium dioxide and the chemical potential energy of the graphene, so that the dynamic controllability of the absorptivity of the absorber is realized.
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