CN115911885A - Terahertz broadband wave absorber based on temperature control reticular vanadium dioxide microstructure - Google Patents
Terahertz broadband wave absorber based on temperature control reticular vanadium dioxide microstructure Download PDFInfo
- Publication number
- CN115911885A CN115911885A CN202211683723.7A CN202211683723A CN115911885A CN 115911885 A CN115911885 A CN 115911885A CN 202211683723 A CN202211683723 A CN 202211683723A CN 115911885 A CN115911885 A CN 115911885A
- Authority
- CN
- China
- Prior art keywords
- vanadium dioxide
- layer
- wave absorber
- temperature
- broadband wave
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910021542 Vanadium(IV) oxide Inorganic materials 0.000 title claims abstract description 94
- GRUMUEUJTSXQOI-UHFFFAOYSA-N vanadium dioxide Chemical compound O=[V]=O GRUMUEUJTSXQOI-UHFFFAOYSA-N 0.000 title claims abstract description 94
- 239000006096 absorbing agent Substances 0.000 title claims abstract description 44
- 239000000758 substrate Substances 0.000 claims abstract description 42
- 230000033228 biological regulation Effects 0.000 claims abstract description 17
- 210000000438 stratum basale Anatomy 0.000 claims abstract description 13
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 10
- 239000010931 gold Substances 0.000 claims abstract description 10
- 229910052737 gold Inorganic materials 0.000 claims abstract description 10
- 229910052751 metal Inorganic materials 0.000 claims description 21
- 239000002184 metal Substances 0.000 claims description 21
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 14
- 235000012239 silicon dioxide Nutrition 0.000 claims description 7
- 239000000377 silicon dioxide Substances 0.000 claims description 7
- 239000000956 alloy Substances 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 238000010521 absorption reaction Methods 0.000 abstract description 32
- 230000008901 benefit Effects 0.000 abstract description 6
- 238000000034 method Methods 0.000 abstract description 5
- 238000013461 design Methods 0.000 abstract description 2
- 239000000463 material Substances 0.000 description 11
- 238000010586 diagram Methods 0.000 description 9
- 230000005684 electric field Effects 0.000 description 7
- 239000000243 solution Substances 0.000 description 7
- 230000008859 change Effects 0.000 description 6
- 230000010287 polarization Effects 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- 238000011161 development Methods 0.000 description 4
- 230000018109 developmental process Effects 0.000 description 4
- 239000012782 phase change material Substances 0.000 description 4
- 238000004088 simulation Methods 0.000 description 4
- 238000001514 detection method Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- 238000001228 spectrum Methods 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 238000000862 absorption spectrum Methods 0.000 description 2
- 238000010923 batch production Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 229910021389 graphene Inorganic materials 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Images
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Abstract
The invention provides a terahertz broadband wave absorber based on a temperature-controlled reticular vanadium dioxide microstructure, which comprises: a plurality of periodically arranged building blocks, said building blocks comprising: the stratum basale and the vanadium dioxide resonance layer that is located the stratum basale top, the stratum basale is four-layer structure, from top to bottom respectively is: the substrate comprises a first dielectric substrate layer, a vanadium dioxide base layer, a second dielectric substrate layer and a gold base layer; under different temperatures, the electrical conductivity of the structural units is different, so that the resonance characteristic of the terahertz broadband wave absorber is changed, and the dynamic regulation and control of the wave absorbing strength are realized; the method has the advantages of wide working wave band, high absorption efficiency and continuous and dynamic regulation and control of absorption intensity; the method is suitable for the technical field of micro-structure design of wave absorbers.
Description
Technical Field
The invention relates to the technical field of micro-structure design of wave absorbers, in particular to a terahertz broadband wave absorber based on a temperature control mesh vanadium dioxide micro-structure.
Background
The terahertz wave band is between microwave and infrared, is an electromagnetic wave with the frequency of 0.1-10THz, and attracts people's attention since the last eighties of the century because the terahertz wave band has wide application prospects in the fields of communication sensing, imaging and the like.
The main problem influencing the development of the terahertz technology is that a functional device with excellent performance is lacked, the appearance of the super-surface provides conditions for the practical application of terahertz, and in order to promote the development of the terahertz technology, the problem of combination of terahertz waves and the super-surface becomes the leading edge and the hot point of the current research in the optical field.
The metamaterial is a manually designed metamaterial formed by periodically arranging sub-wavelength thickness structural units, has special physical properties compared with natural materials, and can be used for effectively regulating and controlling the amplitude, phase, polarization characteristics and transmission characteristics of terahertz waves in a terahertz frequency band, so that a new inspiration is provided for the application of the terahertz frequency band.
The wave absorber is one of important directions in the development of terahertz application, and the terahertz wave absorber has wide application prospects in the aspects of electromagnetic modulation, sensing detection, safety detection and electromagnetic stealth; most of the existing wave absorber structures are typical metal-medium-metal sandwich structures; however, due to the strong dispersion characteristic of resonance, super-surface absorbers are usually non-tunable narrow bandwidth or single frequency absorption, which greatly limits their practical applications.
The method for realizing dynamic regulation and control of the absorption strength and the response frequency of the terahertz wave absorber mainly comprises the step of designing a super-surface structure by using a dynamically-controllable material or structure. The technology for constructing the adjustable material of the reconfigurable super surface in the terahertz frequency band comprises the following steps: two-dimensional (2D) materials graphene, liquid crystal, semiconductor silicon, phase change materials Ge2Sb2Te5 (GST), vanadium dioxide (VO 2), and the like. However, the use of the above materials has various drawbacks, such as: adding graphene to the absorber structure can greatly increase processing cost; the liquid crystal molecules are unstable and difficult to arrange, and the response regulation range of the wave absorber is limited; the optical properties of semiconductor silicon can be adjusted by laser pulses, but the carrier injection technology is not yet mature; the phase-change material Ge2Sb2Te5 can be switched between a crystalline state and an amorphous state, but higher annealing temperature (100-150 ℃) is required; in comparison, the adjustable phase-change material VO is added into the wave absorber 2 The reconfigurable super-surface wave absorber has the advantages of quick response, large modulation depth, simple modulation method and the likeHas the advantages of simple process and low cost.
In recent years, VO based on phase change material 2 The reconfigurable terahertz wave absorber is proposed in succession, such as: song et al in 2018 designed a cross-shaped resonant ring structure by using vanadium dioxide as an intermediate layer, realized a terahertz wave-absorbing super-surface with the bandwidth of 0.33THz, which is higher than 0.9, and realized a large-range dynamic modulation (0.3-1.0) of absorption by temperature-controlled vanadium dioxide phase change; in 2019, wang et al designed a reconfigurable wave-absorbing super-surface based on a vanadium dioxide target heart-shaped structure and with a bandwidth of 0.65THz, and the regulation range of absorption was 0.3-0.98; although the microstructure realizes dynamic adjustment of absorption intensity, the microstructure still has the defects of small adjustable amplitude, narrow bandwidth and the like, and is not beneficial to practical application.
Disclosure of Invention
Aiming at the defects existing in the related technology, the technical problem to be solved by the application is as follows: the terahertz broadband wave absorber based on the temperature-control reticular vanadium dioxide microstructure has the characteristics of wide working wave band, high absorption efficiency and continuous and dynamic regulation and control of absorption strength.
The application provides a terahertz broadband wave absorber based on netted vanadium dioxide micro-structure of control by temperature change includes: a plurality of periodically arranged building blocks, said building blocks comprising: the stratum basale and the vanadium dioxide resonance layer that is located the stratum basale top, the stratum basale is four-layer structure, from top to bottom respectively is: the substrate comprises a first dielectric substrate layer, a vanadium dioxide base layer, a second dielectric substrate layer and a gold base layer;
under different temperatures, the structural units have different conductivities, so that the resonance characteristic of the terahertz broadband wave absorber is changed, and the dynamic regulation and control of the wave absorbing strength are realized.
Optionally, the vanadium dioxide resonance layer is of a square frame structure, and the width of the square frame is 10-14 μm.
Optionally, the arrangement period of the structural units is P x ＝P y ＝80～120μm。
Optionally, the vanadium dioxide resonance layer and the vanadium dioxide substrate layer are in a medium state when in a low-temperature state; when in a high temperature state, the alloy is in a metal state.
Optionally, when the vanadium dioxide resonance layer and the vanadium dioxide substrate layer are in a metal state, the conductivity of the vanadium dioxide resonance layer and the vanadium dioxide substrate layer is 2 x 10 5 S/m；
When the vanadium dioxide resonance layer and the vanadium dioxide substrate layer are in a medium state, the electric conductivity of the vanadium dioxide resonance layer and the vanadium dioxide substrate layer is 200S/m.
Optionally, the first layer of dielectric substrate and the second layer of dielectric substrate are both made of silicon dioxide; the dielectric constant of the silicon dioxide is 3.8.
Optionally, the gold base layer has a conductivity of 4.56 × 10 7 S/m。
Optionally, the thickness of the vanadium dioxide resonance layer is 0.01 μm;
the thickness of the first layer of dielectric substrate is 18-23 mu m;
the thickness of the first metal resonance layer is 1-2 μm;
the thickness of the second layer of dielectric substrate is 10-20 μm;
the thickness of the second metal resonance layer is 5-15 μm.
The technical scheme that this application provided's advantage lies in:
1. in this application, vanadium dioxide resonance layer and vanadium dioxide stratum basale owing to adopted the vanadium dioxide material, the conductivity under different temperatures is different for the resonance characteristic of terahertz broadband wave absorber changes, thereby realizes the dynamic control to inhaling wave intensity, and the practicality is extremely strong.
2. In this application, the constitutional unit of adoption is square frame, compares with traditional constitutional unit, and simple structure need not too much consideration when preparing gap problem between each constitutional unit, has reduced the processing degree of difficulty for preparation cost reduction more is favorable to batch production.
3. In the application, a metal-medium-metal five-layer structure is adopted, and compared with a traditional metal-medium-metal three-layer structure, when a structural unit is in a medium state, the absorption is close to zero, and the absorption of a vanadium dioxide material in the medium state can be reduced, so that a larger dynamic regulation and control range is achieved; meanwhile, when the vanadium dioxide material is in a metal state, the first layer of dielectric substrate and the vanadium dioxide base layer can also enable the absorption rate of the terahertz broadband wave absorber to be increased to a certain extent, so that the regulation and control range of absorption is wider.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions of the related art, the drawings required to be used in the description of the embodiments or the related art will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to these drawings without creative efforts.
Fig. 1 is a schematic structural diagram of a terahertz broadband wave absorber based on a temperature-controlled mesh vanadium dioxide microstructure provided by an embodiment of the invention;
fig. 2 is a schematic diagram of a simulation result of the terahertz broadband wave absorber provided by the embodiment of the present invention;
FIG. 3 is a top view of a structural unit in an embodiment of the present invention;
FIG. 4 is a schematic diagram of simulation results of a vanadium dioxide dielectric function and a terahertz wave-absorbing super surface under different temperature regulation;
FIG. 5 is a schematic diagram illustrating dynamic adjustment and control of absorption intensity of a terahertz broadband wave absorber according to an embodiment of the present invention;
FIG. 6 is a schematic diagram of the electric field distribution of the structural unit in the embodiment of the present invention at a frequency of 1.96 THz;
in the figure:
10 is a vanadium dioxide resonance layer, 20 is a first layer dielectric substrate, 30 is a vanadium dioxide basal layer, 40 is a second layer dielectric substrate, and 50 is a gold basal layer.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some embodiments, but not all embodiments, of the present invention; all other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Example one
Referring to fig. 1, the terahertz broadband wave absorber based on the temperature-controlled mesh vanadium dioxide microstructure comprises: a plurality of periodically arranged building blocks, said building blocks comprising: the stratum basale and the vanadium dioxide resonance layer 10 that is located the stratum basale top, the stratum basale is four-layer structure, from top to bottom respectively is: a first dielectric substrate 20, a vanadium dioxide base layer 30, a second dielectric substrate 40 and a gold base layer 50;
under different temperatures, the structural units have different conductivities, so that the resonance characteristic of the terahertz broadband wave absorber is changed, and the dynamic regulation and control of the wave absorbing strength are realized.
In this embodiment, the vanadium dioxide resonant layer 10 and the vanadium dioxide substrate layer 30 are made of vanadium dioxide materials, and have different conductivities at different temperatures, so that the resonance characteristics of the terahertz broadband wave absorber are changed, and dynamic control of the wave absorption strength is realized.
FIG. 2 is a polarization reflection coefficient spectrum (shown in (a) of FIG. 2) and a reflection and absorption spectrum (shown in (b) of FIG. 2) of a terahertz broadband wave absorber based on a temperature-controlled mesh vanadium dioxide microstructure calculated through simulation; wherein: r is a radical of hydrogen xx 、r yx 、r xy 、r yy The reflection coefficient spectrums are respectively x-polarization incidence-x polarization reflection, x-polarization incidence-y polarization reflection, y-polarization incidence-x polarization reflection and y-polarization incidence-x polarization reflection; because the substrate is made of metal, the incident light cannot penetrate through the substrate, and therefore the absorptivity can be simplified from A =1-R-T to A =1-R.
As can be seen from fig. 2, there is an absorption peak of approximately 1 at 1.96THz, and there is high absorption with a bandwidth of 0.73THz (absorption > 0.9) in the 1.55-2.28THz band.
Example two
Referring to fig. 3, on the basis of the first embodiment, the terahertz broadband wave absorber based on the temperature-controlled mesh vanadium dioxide microstructure includes a plurality of vanadium dioxide resonant layers 10The structural units are arranged periodically, the structural units are square frames, and the width of each square frame is 10-14 mu m; the arrangement period of the structural units is P x ＝P y ＝80～120μm。
It should be noted that, as a preferable scheme, the width of the square frame may be 14 μm; the arrangement period of the structural units may be P x ＝P y ＝100μm。
It should be noted that the thickness of the vanadium dioxide resonance layer 10 is 0.01 μm; the thickness of the first layer of dielectric substrate 20 is 18-23 μm; the thickness of the vanadium dioxide basal layer 30 is 1-2 μm; the thickness of the second layer of dielectric substrate 40 is 10-20 μm; the thickness of the gold base layer 50 is 5 to 15 μm.
In this embodiment, the constitutional unit who adopts is square frame, compares with traditional constitutional unit, and simple structure need not too much consideration when preparing and gap problem between each constitutional unit has reduced the processing degree of difficulty for preparation cost reduces, more is favorable to batch production.
EXAMPLE III
On the basis of the first embodiment, when the vanadium dioxide resonance layer 10 and the vanadium dioxide substrate layer 30 are in a low-temperature state, the terahertz broadband wave absorber based on the temperature-controlled reticular vanadium dioxide microstructure is in a medium state; when in a high temperature state, the alloy is in a metal state.
It should be noted that when the vanadium dioxide resonance layer 10 and the vanadium dioxide substrate layer 30 are in a metal state, the electrical conductivity thereof is 2 × 10 5 S/m; when the vanadium dioxide resonance layer 10 and the vanadium dioxide substrate layer 30 are in a dielectric state, the electrical conductivity is 200S/m.
The first dielectric substrate 20 and the second dielectric substrate 40 are made of silicon dioxide; the dielectric constant of the silicon dioxide is 3.8.
Note that the conductivity of the gold base layer 50 is 4.56 × 10 7 S/m。
In this embodiment, the expression of the dielectric function of vanadium dioxide can be described by using a dolude model, which is:
wherein: epsilon ∞ The high-frequency dielectric constant is 12; gamma is the collision frequency and is 5.75 multiplied by 10 13 rad/s；ω p The plasma frequency is expressed as follows:
wherein: sigma 0 ＝3×10 5 S/m，ω p (σ 0 )＝1.4×10 15 rad/s。
In this embodiment, the photoelectric characteristics of vanadium dioxide in different states are described by using different conductivities, and when the ambient temperature rises from 28 ℃ to 68 ℃ or higher, the vanadium dioxide is changed from a dielectric state to a metal state, where: the electrical conductivity of the metallic vanadium dioxide is set to 2X 10 5 S/m; the conductivity of the medium vanadium dioxide is 200S/m, and the conductivities of the vanadium dioxide between the metal state and the medium state are respectively set as follows: 1X 10 3 、5×10 3 、2×10 4 、8×10 4 S/m。
In FIG. 4, (a) and (b) are respectively the real part and imaginary part of the dielectric function of vanadium dioxide at different temperatures; (c) And (d) are respectively a simulation result schematic diagram of the reflection spectrum and the absorption spectrum of the terahertz broadband wave absorber.
Referring to FIG. 4, the conductivity of vanadium dioxide is 200S/m at normal temperature, which shows dielectric characteristics, and the conductivity of vanadium dioxide increases from 200S/m to 2X 10 when the temperature gradually increases from 28 ℃ to 68 DEG C 5 S/m, gradually showing stronger metal characteristics; as can be seen, the super-surface realizes dynamic regulation of absorption rate intensity (from 0.02 to 0.996).
It should be noted that in this embodiment, with the change of the phase of vanadium dioxide, the spectral positions of the absorption and reflection peaks are substantially unchanged, but the absorption intensity changes significantly, because with the change of the photoelectric property of vanadium dioxide, the vanadium dioxide resonant ring microstructure does not excite a new resonant mode, but only changes the intensity of the original resonant mode.
In the embodiment, a five-layer structure of metal-medium-metal is adopted, and compared with the traditional three-layer structure of metal-medium-metal, when the structural unit is in a medium state, the absorption is close to zero, so that the absorption of the vanadium dioxide material in the medium state can be reduced, and a larger dynamic regulation and control range can be achieved; meanwhile, when the vanadium dioxide material is in a metal state, the first dielectric substrate 20 and the vanadium dioxide base layer 30 can also enable the absorption rate of the terahertz broadband wave absorber to be increased to a certain extent, and at the moment, the absorption is close to 1, so that the regulation and control range of the absorption is larger.
In this embodiment, assuming that the absorption rate of vanadium dioxide in the metal state is defined as Am, and the absorption rate of vanadium dioxide in the medium state is defined as Ai, the modulation depth of the terahertz wave-absorbing subsurface can be described as: MD = (a) m -A i )/A m 。
In fig. 5, (a) shows that the absorption difference between 1.63 and 2.25THz is large before and after the phase change of vanadium dioxide, and the difference is more than 0.9, which indicates that the wave-absorbing super-surface in the application has strong dynamic regulation and control capability in the frequency band; (b) As shown in the figure, at 1.34-2.45THz (the width is 1.11 THz), the modulation depth MD of the wave-absorbing super surface in the application is higher than 0.9, especially at 1.96THz, the modulation depth of the device is as high as 0.97, and the larger modulation depth shows that the terahertz wave absorber has good dynamic regulation and control capability on absorption intensity in a wide bandwidth range.
In fig. 6, (a 1) shows that when vanadium dioxide is in a metal state, two strong electric field enhancements exist in the gap of the resonant ring; (a2) In the (a 3) diagram, the electric field in the z-y plane shown by the dotted line in the (a 1) diagram is selected and given at the two locations where the electric field is enhanced, and in the (a 1) diagram: black arrows represent vector electric fields, and the distribution characteristics of the two enhanced vector electric fields indicate that electric dipole-like resonance modes in opposite directions are excited in the silicon dioxide middle layer; in addition, the enhanced electric field indicates that the incident terahertz waves are confined inside the structure of the wave-absorbing super-surface, resulting in nearly perfect absorption.
To sum up, this application is based on netted vanadium dioxide micro-structure's of control by temperature change terahertz broadband wave absorber has the absorption efficiency height, and developments adjustable advantage has extensive application prospect in fields such as electromagnetic modulation, sensing detection, electromagnetism stealth, and the practicality is extremely strong.
In the description of the present invention, it is to be understood unless otherwise. Unless specifically stated or limited otherwise, the terms "mounted," "connected," and "secured" are to be construed broadly and encompass, for example, both fixed and removable connections or integral units; can be mechanically or electrically connected; they may be directly connected or indirectly connected through intervening media, or they may be connected internally or in any other suitable relationship, unless expressly stated otherwise. The specific meanings of the above terms in the present invention can be understood according to specific situations by those of ordinary skill in the art.
The above embodiments are only used to illustrate the technical solution of the present invention, and not to limit the same; while the invention has been described in detail and with reference to the foregoing embodiments, it will be understood by those skilled in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some or all of the technical features may be equivalently replaced; and the modifications or the substitutions do not make the essence of the corresponding technical solutions depart from the scope of the technical solutions of the embodiments of the present invention.
Claims (8)
1. Terahertz broadband wave absorber based on temperature control netted vanadium dioxide microstructure is characterized by comprising: a plurality of periodically arranged building blocks, said building blocks comprising: the stratum basale and the vanadium dioxide resonance layer (10) that are located the stratum basale top, the stratum basale is four-layer structure, from top to bottom is respectively: the vanadium dioxide substrate comprises a first dielectric substrate layer (20), a vanadium dioxide base layer (30), a second dielectric substrate layer (40) and a gold base layer (50);
under different temperatures, the structural units have different conductivities, so that the resonance characteristic of the terahertz broadband wave absorber is changed, and the dynamic regulation and control of the wave absorbing strength are realized.
2. The terahertz broadband wave absorber based on the temperature-controlled reticular vanadium dioxide microstructure according to claim 1, wherein the vanadium dioxide resonance layer (10) is of a square frame structure, and the width of the square frame is 10-14 μm.
3. The terahertz broadband wave absorber based on the temperature-controlled reticular vanadium dioxide microstructure of claim 1, wherein the arrangement period of the structural units is P x ＝P y ＝80～120μm。
4. The terahertz broadband wave absorber based on the temperature-controlled reticular vanadium dioxide microstructure according to claim 1, wherein the vanadium dioxide resonance layer (10) and the vanadium dioxide substrate layer (30) are in a medium state when in a low-temperature state; when in a high temperature state, the alloy is in a metal state.
5. The terahertz broadband wave absorber based on the temperature-controlled reticular vanadium dioxide microstructure according to claim 4, wherein the vanadium dioxide resonance layer (10) and the vanadium dioxide substrate layer (30) have the conductivity of 2 x 10 when in a metal state 5 S/m；
When the vanadium dioxide resonance layer (10) and the vanadium dioxide substrate layer (30) are in a medium state, the electric conductivity is 200S/m.
6. The terahertz broadband wave absorber based on the temperature-controlled reticular vanadium dioxide microstructure according to claim 1, wherein the first layer of dielectric substrate (20) and the second layer of dielectric substrate (40) are made of silicon dioxide; the dielectric constant of the silicon dioxide is 3.8.
7. The terahertz broadband wave absorber based on temperature-controlled reticular vanadium dioxide microstructure according to claim 4, characterized in that the electrical conductivity of the gold substrate layer (50) is4.56×10 7 S/m。
8. The terahertz broadband wave absorber based on the temperature-controlled reticular vanadium dioxide microstructure according to claim 5, wherein the thickness of the vanadium dioxide resonance layer (10) is 0.01 μm;
the thickness of the first layer of dielectric substrate (20) is 18-23 mu m;
the thickness of the vanadium dioxide basal layer (30) is 1-2 μm;
the thickness of the second layer of dielectric substrate (40) is 10-20 mu m;
the thickness of the gold base layer (50) is 5 to 15 μm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211683723.7A CN115911885A (en) | 2022-12-27 | 2022-12-27 | Terahertz broadband wave absorber based on temperature control reticular vanadium dioxide microstructure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211683723.7A CN115911885A (en) | 2022-12-27 | 2022-12-27 | Terahertz broadband wave absorber based on temperature control reticular vanadium dioxide microstructure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN115911885A true CN115911885A (en) | 2023-04-04 |
Family
ID=86495442
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202211683723.7A Pending CN115911885A (en) | 2022-12-27 | 2022-12-27 | Terahertz broadband wave absorber based on temperature control reticular vanadium dioxide microstructure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN115911885A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116106998A (en) * | 2023-04-10 | 2023-05-12 | 广东工业大学 | Tunable near infrared absorber based on composite structure of shape array and titanium nitride |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101888175B1 (en) * | 2017-07-21 | 2018-08-14 | 삼육대학교산학협력단 | Outer square loop addition type terahertz active resonator |
| CN210040564U (en) * | 2019-08-20 | 2020-02-07 | 南京邮电大学 | Double-layer terahertz wave absorber based on vanadium dioxide and cavity resonance |
| CN212783820U (en) * | 2020-10-16 | 2021-03-23 | 中国计量大学 | Broadband-adjustable terahertz wave absorber based on vanadium dioxide phase-change material |
| CN113054440A (en) * | 2021-03-18 | 2021-06-29 | 四川大学 | Double-control broadband THz absorber based on vanadium dioxide and graphene |
-
2022
- 2022-12-27 CN CN202211683723.7A patent/CN115911885A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101888175B1 (en) * | 2017-07-21 | 2018-08-14 | 삼육대학교산학협력단 | Outer square loop addition type terahertz active resonator |
| CN210040564U (en) * | 2019-08-20 | 2020-02-07 | 南京邮电大学 | Double-layer terahertz wave absorber based on vanadium dioxide and cavity resonance |
| CN212783820U (en) * | 2020-10-16 | 2021-03-23 | 中国计量大学 | Broadband-adjustable terahertz wave absorber based on vanadium dioxide phase-change material |
| CN113054440A (en) * | 2021-03-18 | 2021-06-29 | 四川大学 | Double-control broadband THz absorber based on vanadium dioxide and graphene |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116106998A (en) * | 2023-04-10 | 2023-05-12 | 广东工业大学 | Tunable near infrared absorber based on composite structure of shape array and titanium nitride |
| CN116106998B (en) * | 2023-04-10 | 2023-06-09 | 广东工业大学 | Tunable near infrared absorber based on composite structure of shape array and titanium nitride |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN107942418B (en) | Terahertz dual-waveband absorber based on cross-shaped graphene material and application thereof | |
| Zhu et al. | Optical metamaterial absorber based on leaf-shaped cells | |
| CN108802862A (en) | A kind of reflective circular polarization plane super lens surpassing surface based on graphene | |
| CN109901257B (en) | Visible light metamaterial polarization converter | |
| CN211123332U (en) | Graphene-based broadband adjustable terahertz wave absorber | |
| CN113809544B (en) | Gallium arsenide/graphene composite metamaterial terahertz broadband absorber | |
| CN112684648B (en) | Broadband adjustable absorber based on vanadium dioxide and Fabry-Perot cavity | |
| CN110687622B (en) | Polarization-adjustable spectrum dual-difference-response perfect optical wave absorber and preparation method thereof | |
| CN110265791B (en) | Light adjustable high-Q value terahertz absorber based on composite all-dielectric | |
| CN212783820U (en) | Broadband-adjustable terahertz wave absorber based on vanadium dioxide phase-change material | |
| CN111239866A (en) | Ultra-wideband mid-infrared band perfect wave absorber and preparation method thereof | |
| Shafique et al. | Highly efficient Vanadium Nitride based metasurface absorber/emitter for solar-thermophotovoltaic system | |
| CN115911885A (en) | Terahertz broadband wave absorber based on temperature control reticular vanadium dioxide microstructure | |
| CN112382858B (en) | Light-adjustable four-frequency-band terahertz metamaterial absorber based on all-dielectric material | |
| CN111082229A (en) | Terahertz broadband adjustable absorber based on single-ring graphene | |
| Zhou et al. | Cross-shaped titanium resonators based metasurface for ultra-broadband solar absorption | |
| CN113078479B (en) | Terahertz metamaterial absorber based on composite silicon hemisphere/graphene broadband | |
| CN113161763A (en) | Graphene-based all-dielectric terahertz tunable wave absorber | |
| CN110634966B (en) | Ultrathin sunlight black silicon wave absorber and preparation method thereof | |
| CN113009606A (en) | Five-layer nano-material ultra-wideband perfect absorber and preparation method thereof | |
| CN110376667B (en) | Broadband electromagnetic wave absorber based on refractory material and preparation method thereof | |
| Shaghouli et al. | Plasmonic enhanced ultra-thin solar cell: A combined approach using fractal and nano-antenna structure to maximize absorption | |
| Wu et al. | Switchable terahertz metasurfaces based on patterned vanadium dioxide and graphene | |
| Telha et al. | Ultrabroadband rectangular double split ring based perfect solar absorber | |
| CN114465014A (en) | Light adjustable broadband terahertz absorber based on intrinsic silicon metamaterial and regulation and control method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |