CN110265791B - Light adjustable high-Q value terahertz absorber based on composite all-dielectric - Google Patents
Light adjustable high-Q value terahertz absorber based on composite all-dielectric Download PDFInfo
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- CN110265791B CN110265791B CN201910531783.9A CN201910531783A CN110265791B CN 110265791 B CN110265791 B CN 110265791B CN 201910531783 A CN201910531783 A CN 201910531783A CN 110265791 B CN110265791 B CN 110265791B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q17/00—Devices for absorbing waves radiated from an antenna; Combinations of such devices with active antenna elements or systems
Abstract
The invention discloses a composite all-dielectric-based optical tunable high-Q-value terahertz absorber which comprises a plurality of unit structures arranged in an N multiplied by N mode, wherein each unit structure is composed of a square substrate composed of polyimide and a cylindrical top layer composed of P-type doped silicon. The light adjustable high-Q-value terahertz absorber based on the composite all-dielectric has the advantages of simple structure, easiness in processing, difficulty in oxidation, strong stability and low loss.
Description
Technical Field
The invention belongs to the technical field of absorbers, and relates to a light adjustable high-Q-value terahertz absorber based on a composite all-dielectric medium.
Background
Terahertz waves, also called terahertz rays, refer to electromagnetic waves with a frequency of 0.1-10 THz, with a wavelength range of 30 μm-3 mm, between infrared and microwave. The long wave coincides with millimeter wave and the short wave coincides with infrared ray, and because of its special frequency position, the research on terahertz wave relates to two categories of electronics and photonics. However, due to the limited knowledge of the electromagnetic wave in this band, the development of the terahertz wave technology is limited, so that the research and application of the electromagnetic spectrum present a "terahertz gap". However, with the progress of science and technology, researchers can research terahertz waves, the terahertz gap is gradually filled, and the characteristics and advantages of the terahertz waves are slowly revealed. Terahertz waves have very important applications in the aspects of imaging technology, security inspection, radar, communication and the like. In a plurality of terahertz application fields, the terahertz wave absorption device is also very important for the control and absorption of terahertz waves.
The terahertz absorber means that most of energy of an incident terahertz wave is absorbed at a specific frequency so that almost no energy is reflected. The terahertz absorber has great potential application value in the aspects of electromagnetic stealth, thermal radiation, sensing, thermal imaging, bolometer and the like. The development of terahertz absorbers is therefore of great importance. At present, most of high-Q-value metamaterial wave absorbers adopt a metal-dielectric-metal structure, although the high-Q-value metamaterial wave absorbers can achieve a high absorption effect, metal is easy to oxidize, high in ohmic loss, poor in thermal stability, relatively complex in structure and free of adjustability, and application of the metal is limited.
Disclosure of Invention
The invention aims to provide a composite all-dielectric-based optically-adjustable high-Q-value terahertz absorber, which solves the problems of easiness in oxidation of metal, high loss, poor thermal stability and complex structure in the prior art.
The technical scheme adopted by the invention is that the composite all-dielectric-based optical tunable high-Q-value terahertz absorber comprises a plurality of unit structures, wherein each unit structure is composed of a substrate composed of polyimide and a top layer composed of P-type doped silicon.
The invention is also characterized in that:
the cross section of the substrate is square, and the top layer is a cylinder.
The resistivity of the P-type doped silicon is 1 omega cm-1～10Ω·cm-1。
The radius of the top layer is 105-125 μm, and the thickness is 70-95 μm.
The thickness of the substrate is 15-30 μm.
The central axis of the top layer is located at the intersection of the substrate cross-sectional diagonals.
The unit structures are arranged in an NxN mode, and the distance between the top layers of the adjacent unit structures is 300-350 mu m.
The invention has the beneficial effects that:
the top layer structure of the terahertz absorber based on the composite all-dielectric optical tunable high Q value is formed by P-type doped silicon, and compared with N-type doping, the P-type doped silicon has better adsorbability on terahertz waves;
compared with a metal metamaterial wave absorber, the composite all-dielectric-based terahertz absorber with the adjustable high Q value is simple in structure, does not need stacking of multiple layers of metamaterials, is easy to process and is strong in stability;
the invention relates to a composite all-dielectric-based optically-adjustable high-Q-value terahertz absorber, which adopts all-dielectric materials and adopts a cylindrical structure at the top layer, so that the absorber has the characteristic of flexibility and also has the characteristics of high Q value, insensitivity to TE and TM mode polarization and the like;
according to the composite all-dielectric-based optically-tunable high-Q-value terahertz absorber, the absorption characteristic of the absorber can be changed by changing the geometric parameters of the substrate and the top layer;
the composite all-dielectric-based optically-adjustable high-Q-value terahertz absorber can realize the modulation of the absorption rate of a device by changing the illumination intensity.
Drawings
FIG. 1 is a schematic structural diagram of a composite all-dielectric-based optically tunable high-Q terahertz absorber according to the present invention;
FIG. 2 is an absorption curve diagram of a composite all-dielectric-based optical tunable high-Q terahertz absorber according to the present invention;
FIG. 3 is an absorption curve diagram of a top-layer cylinder of a composite all-dielectric-based optically tunable high-Q terahertz absorber of the present invention at different radii;
FIG. 4 is an absorption curve diagram of a top-layer cylinder of a terahertz absorber with a tunable high Q value based on a composite all-dielectric material according to the invention at different thicknesses;
FIG. 5 is an absorption curve diagram of the composite all-dielectric-based optically-tunable high-Q terahertz absorber under different illumination intensities.
In the figure, 1 is the substrate, 2 is the top layer.
Detailed Description
The present invention will be described in detail below with reference to the accompanying drawings and specific embodiments.
The invention relates to a composite all-dielectric-based optically-tunable high-Q-value terahertz absorber, which comprises a substrate 1 made of polyimide and a terahertz absorber with the resistivity of 1 omega cm shown in figure 1-1～10Ω·cm-1Top layer of P-type doped silicon2 are arranged in an N × N array.
The cross section of the substrate 1 is square, the top layer 2 is cylindrical, the thickness of the substrate 1 is 15-30 μm, the radius of the top layer 2 is 105-125 μm, the thickness is 70-95 μm, the central axis of the top layer 2 is located at the intersection point of the diagonals of the cross section of the substrate 1, and the distance between the top layers 2 of adjacent unit structures is 300-350 μm.
The composite all-dielectric-based high-Q-value terahertz absorber has the advantages that the square substrate in the cross section is favorable for arrangement of a plurality of unit structures, the cylindrical top layer enables the absorber to have the characteristic of insensitivity in the polarization direction, the same absorption effect is realized on waves in different directions, and the all-dielectric material is selected, so that the absorber is not easy to oxidize, low in loss, high in stability, high in narrow-band absorption and high in Q value.
As can be seen from FIG. 2, the composite all-dielectric-based optical tunable high-Q-value terahertz absorber achieves the lowest reflection and transmission at 0.558THz, the highest absorption rate is achieved, the absorption rate reaches 98.83%, and the Q value reaches 13.7.
As can be seen from FIG. 3, the absorption curves of the composite all-dielectric-based optically tunable high-Q terahertz absorber at the top layer cylinder radii of 105 μm, 110 μm, 115 μm, 120 μm and 125 μm respectively show that the absorption rate can reach the highest value at the radius of 115 μm.
As can be seen from FIG. 4, the absorption curve of the composite all-dielectric-based terahertz absorber with the light adjustable high Q value is shown in the absorption curve chart when the thicknesses of the top layer cylinder are respectively 70 μm, 75 μm, 80 μm, 87 μm and 90 μm, and the absorption rate can reach the highest value when the thickness is 87 μm.
As can be seen from fig. 4, the absorption curve of the composite all-dielectric-based optically-tunable high-Q terahertz absorber under different illumination conditions is different due to different carrier concentrations of plasmas under different illumination conditions. When the illumination intensity is 0 muJ/cm2When the absorption rate of the absorber reaches 98.83% at 0.558THz, the carrier concentration is changed when the illumination intensity is continuously enhanced, and the absorption rate is corresponding to the carrier concentrationThe absorption rate is continuously reduced when the absorption curve is changed, and when the light intensity is increased to 340 mu J/cm2When the light is used, the absorption rate is reduced by about 30%, and the modulation depth is about 53.1%, so that the light regulation is realized.
Claims (3)
1. The terahertz absorber is characterized by comprising a plurality of unit structures, wherein each unit structure is composed of a substrate (1) composed of polyimide and a top layer (2) composed of P-type doped silicon;
the cross section of the substrate (1) is square, and the top layer (2) is a cylinder;
the resistivity of the P-type doped silicon is 1 omega cm-1～10Ω·cm-1；
The radius of the top layer (2) is 105-125 μm, and the thickness is 70-95 μm;
the thickness of the substrate (1) is 15-30 μm.
2. The composite all-dielectric based optically tunable high-Q terahertz absorber according to claim 1, wherein the central axis of the top layer (2) is located at the intersection of the diagonals of the cross section of the substrate (1).
3. The composite all-dielectric-based optically tunable high-Q terahertz absorber according to claim 2, wherein the unit structures are arranged in NxN, and the distance between the top layers (2) of adjacent unit structures is 300 μm to 350 μm.
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| CN112886274B (en) * | 2021-01-12 | 2022-07-08 | 之江实验室 | Ultra-wideband terahertz absorber with variable absorption rate |
| CN113161760B (en) * | 2021-03-03 | 2022-08-02 | 西安理工大学 | All-dielectric multi-band terahertz metamaterial absorber with randomly distributed units |
| CN113314849A (en) * | 2021-04-20 | 2021-08-27 | 上海海事大学 | Periodic unit of metamaterial broadband wave absorber and metamaterial broadband wave absorber |
| CN114088663B (en) * | 2021-10-29 | 2023-10-27 | 西安理工大学 | Terahertz sensor based on symmetrical protection type continuum constraint state |
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| CN108666763A (en) * | 2018-04-15 | 2018-10-16 | 哈尔滨理工大学 | A kind of broadband Terahertz absorber based on high doping semiconductor |
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| CN108666763A (en) * | 2018-04-15 | 2018-10-16 | 哈尔滨理工大学 | A kind of broadband Terahertz absorber based on high doping semiconductor |
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| All-dielectric metasurface absorbers for uncooled terahertz imaging;HEBIN FAN等;《optica》;20170531;第4卷(第6期);第601-604页 * |
| Experimental realization of a terahertz all-dielectric metasurface absorber;XINYU LIU等;《OPTICS EXPRESS》;20170103;第25卷(第1期);第191-201页，图1-4 * |
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Application publication date: 20190920 Assignee: Wang Yue Assignor: XI'AN University OF TECHNOLOGY Contract record no.: X2022980005923 Denomination of invention: An optically tunable high Q terahertz absorber based on composite all dielectric Granted publication date: 20201229 License type: Exclusive License Record date: 20220519 |