CN209626432U - A kind of light modulation Terahertz broadband wave absorbing device based on doped silicon - Google Patents
A kind of light modulation Terahertz broadband wave absorbing device based on doped silicon Download PDFInfo
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- CN209626432U CN209626432U CN201920837489.6U CN201920837489U CN209626432U CN 209626432 U CN209626432 U CN 209626432U CN 201920837489 U CN201920837489 U CN 201920837489U CN 209626432 U CN209626432 U CN 209626432U
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Abstract
The light modulation Terahertz broadband wave absorbing device based on doped silicon that the utility model discloses a kind of, including three-decker, from the bottom to top successively are as follows: silicon substrate layer, metamaterial layer and optical pumping source, the silicon substrate layer and metamaterial layer are the p-type silicon material of boron-doping, the metamaterial layer is made of cellular construction array, cellular construction array is arranged in the silicon substrate layer xoy plane periodically, THz wave is incident in the wave absorbing device, it is coupled into wave absorbing device and excites electromagentic resonance, realize the wide band absorption to THz wave, the optical pumping source generates pump beam, in normal incidence to the silicon substrate layer and metamaterial layer, change the carrier concentration of doped silicon, realize wave absorbing device to the absorption band of THz wave, the modulation function of absorptivity；The utility model structure is simple, easy to process, higher to THz wave absorptivity, and Absorber Bandwidth is wider, has the function of light modulation, can be widely applied to the multiple fields such as imaging, stealthy, communication, Terahertz detection.
Description
Technical field
The light modulation Terahertz broadband wave absorbing device based on doped silicon that the utility model relates to a kind of belongs to terahertz wave band suction
Wave technology field.
Background technique
With the development of society and the maturation of technical matters, wave absorbing device is hidden in imaging, optical detection, wireless communication, military affairs
The fields such as body, bio-sensing are using more and more extensive.
On August 23rd, 2018, Nanjing Univ. of Posts and Telecommunications propose " a kind of multilayered structure application No. is 201810965018.3
The insensitive ultra wide band Terahertz wave absorbing device of polarization ", including bottom reflecting plate and its top be arranged by the medium that cuts
Substrate, is provided with the first resonant element being made of one layer of metal patch above the medium substrate, inside the medium substrate
It is inlaid with the second resonant element being made of double layer of metal patch, the invention is by multi-layer structure design, with metal as humorous
Shake material, the assimilation effect in broadband is reached by phase mutual resonance between layers, the wave absorbing device is using between multilayered structure
Phase mutual resonance come generate absorb, structure is complicated, and medium substrate above be provided with one layer of metal patch, inside is inlaid with two layers
Metal patch, shape is special, the precision and processing technology to processing dimension it is more demanding, be not easy to realize；October 23 in 2018
Day, Southern Yangtze University propose application No. is 201811236538.7 " a kind of realizations graphene is in visible light wave range suction wave method
And inhale wave apparatus ", which has periodic more groove structures, and the basic unit of structure is by multiple of same size, deep
Different narrow metal cuttings to be spent to constitute, cutting and its top filled media coating, graphene are deposited on above dielectric passivation,
For TM polarized incident light wave, due to the chamber resonance effects of cutting, the cutting of different depth corresponds to different graphene light absorptions
Graphene may be implemented in the wide band absorption of visible light wave range in wavelength, the combination of multiple and different depth cuttings, and this method is realized
The wave absorbing device absorptivity efficiency of light absorption (up to 60%) that although has 80%, but depend primarily on grapheme material itself, and
Graphene layer is relatively thin, and material is crisp, is easily destroyed, so influence wave absorbing device absorbing property, and this method realize wave absorbing device by
Multiple narrow metal cuttings of same size, that depth is different are constituted, and structure is complicated, and manufacture craft is cumbersome, it is desirable that machining accuracy is high；
On May 7th, 2018, Xiamen University propose " the wide angle of a kind of adjustable graphene of frequency application No. is 201810425436.3
Spend Terahertz wave absorbing device ", it is a kind of 5 layers of structure devices, from top to bottom successively are as follows: upper graphene strips belt, upper dielectric layer, lower stone
Black alkene slice layer, lower dielectric layer and metallic substrate layer, it is anti-that the thick metal layers in design structure are equivalent to mirror surface to electromagnetic wave incident
The transmission for inhibiting electromagnetic wave is penetrated, the Terahertz local surface phasmon to intercouple has been motivated by upper and lower graphene layer simultaneously
The mode of resonance realizes the absorption to incident THz wave, while the chemical potential by adjusting graphene layer changes graphene table
The constraint performance of the excimers such as face, to realize that frequency is adjustable, which can only have 80% to 0.5THz narrow band terahertz band wave
Absorptivity cannot achieve wide band absorption, and the wave absorbing device is made of multilayered structure, changes graphene layer by applied voltage
Chemical potential realizes the modulation function of wave absorbing device, and structure is complicated, and difficulty of processing is big.
Summary of the invention
In order to overcome existing wave absorbing device, structure is complicated, difficulty of processing is big, absorptivity is low, absorption band width, this is practical new
Type provides a kind of light modulation Terahertz broadband wave absorbing device based on doped silicon, to solve the above-mentioned problems of the prior art,
Keep the structure of wave absorbing device simple, difficulty of processing is low, improves the absorptivity and Absorber Bandwidth of wave absorbing device, and have light modulation
Energy.
To achieve the above object, the utility model provides following scheme: the utility model provides a kind of based on doped silicon
Light modulation Terahertz broadband wave absorbing device, including three-decker is followed successively by silicon substrate layer, metamaterial layer and optical pumping from the bottom to top
Source；The metamaterial layer is made of cellular construction array, in being arranged in the silicon substrate layer for xoy plane periodically；When
When THz wave is incident on wave absorbing device, it is coupled into wave absorbing device and is excited electromagentic resonance, realizes and the broadband of THz wave is inhaled
It receives, optical pumping source generation pump beam, in normal incidence to silicon substrate layer and metamaterial layer, changes the carrier concentration of doped silicon,
Realize the light modulation function of wave absorbing device absorption band, absorptivity.
Preferably, the material of the silicon substrate layer is the p-type silicon of boron-doping, in one cycle, silicon substrate layer in the direction x and
Cycle length on the direction y is equal.
Preferably, the material of the metamaterial layer is the p-type silicon of boron-doping, length of the cellular construction on the direction x and the direction y
Less than the cycle length of silicon substrate layer.
Preferably, the optical pumping source generates the pump beam with different-energy density.
The beneficial effects of the utility model are:
1. the utility model is arranged in silicon substrate layer, terahertz based on doped silicon metamaterial layer cellular construction array periodicity
Hereby wave is incident in the wave absorbing device, is coupled into wave absorbing device and between metamaterial layer cellular construction, metamaterial layer and silicon lining
Electromagentic resonance is excited between bottom, meanwhile, silicon materials of doping itself have biggish imaginary index, to realize wave absorbing device
To the wide band absorption of THz wave, the utility model structure is simple, and bill of materials one, easy to process, wave absorbing device has in performance
Absorptivity is higher, the wider advantage of Absorber Bandwidth；
2. the utility model is different from realizing the modulation function of wave absorbing device conventionally by graphene layer and applied voltage is increased
Can, but utilize optical pumping source to generate the different pump beam of energy density, and in normal incidence to silicon substrate layer and metamaterial layer,
By changing the energy density for the pump beam being incident in wave absorbing device, change the carrier concentration in doped silicon, pump beam
Energy density it is higher, the carrier concentration in doped silicon is higher, and the carrier concentration in doped silicon is higher, Jie of doped silicon
The imaginary part of electric constant is bigger, to increase the loss of THz wave, reduce the transmissivity of THz wave or increase THz wave
Reflectivity, also just change the assimilation effect of wave absorbing device, realize the light modulation function of wave absorbing device absorptivity and absorption band,
Manufacture craft is simplified, is easier to realize compared to the modulated wave absorbing device based on graphene layer.
Detailed description of the invention
In order to illustrate the embodiment of the utility model or the technical proposal in the existing technology more clearly, below will be to embodiment
Needed in attached drawing be briefly described, it should be apparent that, the accompanying drawings in the following description is only the utility model
Some embodiments for those of ordinary skill in the art without any creative labor, can also basis
These attached drawings obtain other attached drawings.
Fig. 1 is the structural schematic diagram of the utility model embodiment 1；
Fig. 2 is the structural schematic diagram of the utility model embodiment 1 in one cycle；
Fig. 3 is absorptivity, transmissivity, reflectivity spectrum figure of the utility model embodiment 1 near service band；
Fig. 4 is absorption spectrum figure of the utility model embodiment 1 when incident light is irradiated with different incidence angles；
Fig. 5 is absorption spectrum figure of the utility model embodiment 1 in the pump beam irradiation of different-energy density；
Fig. 6 is the structural schematic diagram of the utility model embodiment 2；
Fig. 7 is the structural schematic diagram of the utility model embodiment 2 in one cycle；
Fig. 8 is absorptivity, transmissivity, reflectivity spectrum figure of the utility model embodiment 2 near service band；
Fig. 9 is absorption spectrum figure of the utility model embodiment 2 when incident light is irradiated with different incidence angles；
Figure 10 is absorption spectrum figure of the utility model embodiment 2 in the pump beam irradiation of different-energy density；
Wherein, 1 is silicon substrate layer, and 2 be metamaterial layer, and 3 be optical pumping source.
Specific embodiment
The following will be combined with the drawings in the embodiments of the present invention, carries out the technical scheme in the embodiment of the utility model
Clearly and completely describe, it is clear that the described embodiments are only a part of the embodiments of the utility model, rather than whole
Embodiment.Based on the embodiments of the present invention, those of ordinary skill in the art are without making creative work
Every other embodiment obtained, fall within the protection scope of the utility model.
To keep the above objects, features, and advantages of the utility model more obvious and easy to understand, with reference to the accompanying drawing and have
Body embodiment is described in further detail the utility model.
Embodiment 1: as shown in Fig. 1, a kind of light modulation Terahertz broadband wave absorbing device based on doped silicon includes three-layered node
Structure, from the bottom to top successively are as follows: silicon substrate layer 1, metamaterial layer 2 and optical pumping source 3；Metamaterial layer 2 is made of cylindrical structure array,
Have in xoy plane periodically, cylindrical structure is periodically arranged in silicon substrate layer 1, is this implementation as shown in Fig. 2
The structural schematic diagram of example in one cycle, in the present embodiment, the structure of the cylindrical structure of metamaterial layer 2 in one cycle
Parameter is r=60 μm of radius, height h1=40 μm, the structural parameters of silicon substrate layer 1 in one cycle are cycle length px=py
=150 μm, height h2=250 μm, the silicon substrate layer 1 of wave absorbing device and the material of metamaterial layer 2 select the p-type silicon of boron-doping.Benefit
The production of silicon substrate layer 1 and metamaterial layer 2 is completed with wet etching technique.
In the present embodiment, THz wave is mapped in the wave absorbing device so that 20 ° of angles are oblique, electric field polarization along the x-axis direction, institute
It states THz wave to be coupled into the wave absorbing device, and between the cellular construction of metamaterial layer 1, metamaterial layer 1 and silicon substrate
Electromagentic resonance is excited between layer 2, meanwhile, silicon materials of doping itself have biggish imaginary index, to realize to terahertz
The hereby wide band absorption of wave.It as shown in Fig. 3, is absorptivity, transmissivity, reflectivity spectrum of the present embodiment near service band
Figure, wherein reflectivity, absorptivity and transmissivity add up to 1, it can be seen that, the present embodiment is biggish in 0.5THz~2.0THz
Absorptivity with higher (being greater than 80%) and lower reflectivity (less than 20%) in THz wave segment limit, in entire frequency spectrum
Range internal transmission factor is close to 0.The present embodiment is as shown in Fig. 4 to the absorption spectrum figure of different angle incidence THz wave, by
This visible the present embodiment THz wave incident angle be no more than 50 ° in the range of can be achieved wide band absorption, 1.0THz~
The absorptivity greater than 80% is realized within the scope of 2.0THz.
Optical pumping source 3 generates the different pump beam of energy density, in normal incidence to silicon substrate layer 1 and metamaterial layer 2, changes
The carrier concentration of varying doping silicon realizes the absorption band of wave absorbing device, the light modulation function of absorptivity.THz wave is with 20 °
Angle is oblique to be mapped in the wave absorbing device, by 0 μ J/cm of energy density2~800 μ J/cm2Pump beam radiation situation under absorption
Spectrogram is as shown in Fig. 5, it can be seen that, the Absorber Bandwidth and absorptivity of wave absorbing device are with the variation of pump beam energy density
And change, the absorptivity of wave absorbing device is with pump light in two 0.5THz~1.0THz, 1.5THz~2.0THz wavelength bands
Being stepped up for beam energy density and gradually reduce, the carrier concentration since pump beam energy density is higher, in doped silicon
Higher, the reflectivity of THz wave is higher, and then the absorptivity of wave absorbing device reduces；Within the scope of 1.04THz~1.59THz still
It can be realized the absorptivity greater than 80%, and maximum absorbance is stepped up with the raising of pump beam energy density, due to
Pump beam energy density is higher, and the carrier concentration in doped silicon is higher, increases the loss of the frequency range THz wave, in turn
Absorptivity improves, and adjusts the performance parameter of the wave absorbing device according to actual needs using optical pumping source 3.
Embodiment 2: as shown in Fig. 6, a kind of light modulation Terahertz broadband wave absorbing device based on doped silicon includes three-layered node
Structure, from the bottom to top successively are as follows: silicon substrate layer 1, metamaterial layer 2 and optical pumping source 3；Metamaterial layer 2, by square structure array group
At with periodically in xoy plane, square structure is periodically arranged in silicon substrate layer 1, is this reality as shown in Fig. 7
The structural schematic diagram of example in one cycle is applied, in the present embodiment, the knot of the square structure of metamaterial layer 2 in one cycle
Structure parameter is a=90 μm of side length, height H1=40 μm, the structural parameters of silicon substrate layer 1 in one cycle are cycle length Px=
Py=150 μm, height H2=250 μm, the silicon substrate layer 1 of wave absorbing device and the material of metamaterial layer 2 select the p-type silicon of boron-doping.Benefit
The production of silicon substrate layer 1 and metamaterial layer 2 is completed with wet etching technique.
In the present embodiment, THz wave is mapped in the wave absorbing device so that 20 ° of angles are oblique, electric field polarization along the x-axis direction, institute
It states THz wave to be coupled into the wave absorbing device, and between the cellular construction of metamaterial layer 1, metamaterial layer 1 and silicon substrate
Electromagentic resonance is excited between layer 2, meanwhile, silicon materials of doping itself have biggish imaginary index, to realize to terahertz
The hereby wide band absorption of wave.It as shown in Fig. 8, is absorptivity, transmissivity, reflectivity spectrum of the present embodiment near service band
Figure, wherein reflectivity, absorptivity and transmissivity add up to 1, it can be seen that, the present embodiment is biggish in 0.5THz~2.0THz
Absorptivity (being greater than 0.8) with higher, lower reflectivity (less than 0.2), in entire frequency spectrum model in THz wave segment limit
Internal transmission factor is enclosed close to 0.The present embodiment is as shown in Fig. 9 to the absorption spectrum figure of different angle incidence THz wave, thus
It can be seen that the present embodiment THz wave incident angle be no more than 50 ° in the range of can be achieved wide band absorption, 1.0THz~
The absorptivity greater than 80% is realized within the scope of 2.0THz.
Optical pumping source 3 generates the different pump beam of energy density, in normal incidence to silicon substrate layer 1 and metamaterial layer 2, changes
The carrier concentration of varying doping silicon realizes the absorption band of wave absorbing device, the light modulation function of absorptivity.THz wave is with 20 °
Angle is oblique to be mapped in wave absorbing device, by 0 μ J/cm of energy density2~800 μ J/cm2Pump beam radiation situation under absorption spectrum
Figure is as shown in Fig. 10, it can be seen that, the Absorber Bandwidth and absorptivity of wave absorbing device with the variation of pump beam energy density and
Variation, the absorptivity of wave absorbing device is with pump beam in two 0.5THz~1.0THz, 1.5THz~2.0THz wavelength bands
The raising of energy density and gradually reduce, still be able within the scope of 1.14THz~1.64THz realize be greater than 80% absorption
Rate, and maximum absorbance being stepped up and be stepped up with pump beam energy density, using optical pumping source 3 according to practical need
To adjust the performance parameter of the wave absorbing device.
In conclusion wave absorbing device described in the utility model have preferable wave-absorbing effect, absorptivity is higher, Absorber Bandwidth compared with
Width, and absorptivity and absorption band are not influenced by the shape of 2 cellular construction of metamaterial layer, the cellular construction of metamaterial layer 2 is not
Be confined to square structure and cylindrical structure, simple cellular construction be applied to metamaterial layer 2 and can be achieved high efficiency and broad band absorb and
The wave absorbing device of light modulation function.
In the description of the present invention, it should be understood that term " longitudinal direction ", " transverse direction ", "upper", "lower", " preceding ",
The orientation or positional relationship of the instructions such as " rear ", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outside" be based on
Orientation or positional relationship shown in the drawings is merely for convenience of description the utility model, rather than the dress of indication or suggestion meaning
It sets or element must have a particular orientation, be constructed and operated in a specific orientation, therefore should not be understood as to the utility model
Limitation.
Embodiment described above is only that the preferred embodiment of utility model is described, not to the range of utility model
It is defined, under the premise of not departing from the spirit of the design of the utility model, those of ordinary skill in the art are to the utility model
The various changes and improvements that technical solution is made should all be fallen into the protection scope that the utility model claims book determines.
Claims (4)
1. a kind of light modulation Terahertz broadband wave absorbing device based on doped silicon, it is characterised in that: including three-decker, from the bottom to top
It is followed successively by silicon substrate layer (1), metamaterial layer (2) and optical pumping source (3)；The metamaterial layer (2) is made of cellular construction array,
In being arranged on the silicon substrate layer (1) for xoy plane periodically；When THz wave is incident on wave absorbing device, it is coupled into
In wave absorbing device and electromagentic resonance is excited, realizes the wide band absorption to THz wave, optical pumping source (3) generates pump beam, just enters
It is mapped in silicon substrate layer (1) and metamaterial layer (2), changes the carrier concentration of doped silicon, realize wave absorbing device absorption band, absorb
The light modulation function of rate.
2. a kind of light modulation Terahertz broadband wave absorbing device based on doped silicon according to claim 1, it is characterised in that: institute
The material for stating silicon substrate layer (1) is the p-type silicon of boron-doping, in one cycle, week of the silicon substrate layer (1) on the direction x and the direction y
Phase equal length.
3. a kind of light modulation Terahertz broadband wave absorbing device based on doped silicon according to claim 1, it is characterised in that: institute
The material for stating metamaterial layer (2) is the p-type silicon of boron-doping, and length of the cellular construction on the direction x and the direction y is less than silicon substrate layer
(1) cycle length.
4. a kind of light modulation Terahertz broadband wave absorbing device based on doped silicon according to claim 1, it is characterised in that: institute
It states optical pumping source (3) and generates the pump beam with different-energy density.
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| CN110048239A (en) * | 2019-06-05 | 2019-07-23 | 中国计量大学 | A kind of light modulation Terahertz broadband wave absorbing device based on doped silicon |
| CN111086301A (en) * | 2019-12-13 | 2020-05-01 | 浙江工业大学 | Superstructure honeycomb composite wave-absorbing material |
| CN111308588A (en) * | 2020-03-23 | 2020-06-19 | 中北大学 | Multi-band perfect absorber based on surface plasmons |
| CN111613902A (en) * | 2020-07-09 | 2020-09-01 | 中国计量大学 | Tunable terahertz wave absorber |
| CN112886274A (en) * | 2021-01-12 | 2021-06-01 | 之江实验室 | Ultra-wideband terahertz absorber with variable absorption rate |
| CN112952400A (en) * | 2021-02-01 | 2021-06-11 | 西安电子科技大学 | Broadband wave-absorbing structure with high-transmittance wave-transmitting window |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110048239A (en) * | 2019-06-05 | 2019-07-23 | 中国计量大学 | A kind of light modulation Terahertz broadband wave absorbing device based on doped silicon |
| CN111086301A (en) * | 2019-12-13 | 2020-05-01 | 浙江工业大学 | Superstructure honeycomb composite wave-absorbing material |
| CN111308588A (en) * | 2020-03-23 | 2020-06-19 | 中北大学 | Multi-band perfect absorber based on surface plasmons |
| CN111613902A (en) * | 2020-07-09 | 2020-09-01 | 中国计量大学 | Tunable terahertz wave absorber |
| CN111613902B (en) * | 2020-07-09 | 2024-08-27 | 中国计量大学 | Tunable ethernet Hertz wave absorber |
| CN112886274A (en) * | 2021-01-12 | 2021-06-01 | 之江实验室 | Ultra-wideband terahertz absorber with variable absorption rate |
| CN112886274B (en) * | 2021-01-12 | 2022-07-08 | 之江实验室 | Ultra-wideband terahertz absorber with variable absorption rate |
| CN112952400A (en) * | 2021-02-01 | 2021-06-11 | 西安电子科技大学 | Broadband wave-absorbing structure with high-transmittance wave-transmitting window |
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