CN112952400A - Broadband wave-absorbing structure with high-transmittance wave-transmitting window - Google Patents
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q17/00—Devices for absorbing waves radiated from an antenna; Combinations of such devices with active antenna elements or systems
- H01Q17/002—Devices for absorbing waves radiated from an antenna; Combinations of such devices with active antenna elements or systems using short elongated elements as dissipative material, e.g. metallic threads or flake-like particles
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
- H01Q15/0006—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
- H01Q15/0086—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices having materials with a synthesized negative refractive index, e.g. metamaterials or left-handed materials
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Abstract
The invention discloses a broadband wave-absorbing structure with a high-transmittance wave-transmitting window, which comprises a bottom medium substrate, a middle medium substrate and an upper medium substrate; a square ring-shaped resonance unit structure is arranged on the bottom layer medium substrate and the middle layer medium substrate; the upper medium substrate is a # -shaped structure formed by mutually and vertically arranging four SSPP unit structures in a crossed manner; a strip grid structure is arranged along the surface of the SSPP unit structure which is vertically and crossly arranged; lumped resistors are arranged on the square ring-shaped resonance unit structure with the grooves and the strip grid structure. The structure can further improve the wave absorbing and wave transmitting performance of the absorption-transmission integrated structure, the structure has the characteristics of ultra wide band, high absorption rate and high transmittance, and the wave transmitting frequency band covers the X wave band of the radar which normally works, so that the structure is more favorable for application in the stealth antenna housing.
Description
Technical Field
The invention belongs to the technical field of artificial metamaterials, and particularly relates to a broadband wave-absorbing structure with a high-transmittance wave-transmitting window.
Background
In recent years, radar stealth technology is continuously developed, the application of the wave-absorbing material is one of important ways of designing stealth of a weapon platform, but the traditional wave-absorbing material is heavy in mass and high in manufacturing cost, and has great limitations in practical application. The proposal of the metamaterial concept provides a new design direction for the design of the wave-absorbing material. The electromagnetic metamaterial is a novel artificial material, is formed by periodically arranging artificially designed unit structures, and has unique electromagnetic wave regulation and control performance. In 2008, the first type of perfect wave-absorbing structure designed based on the metamaterial is proposed by Landy et al, and the structure is composed of three layers of metal, medium and metal and can reach a wave-absorbing peak value of 96% at 11.48 GHz. With the continuous development of computing and processing technologies, wave-absorbing structures designed based on metamaterials and having the characteristics of broadband, multiple frequency bands, high stability, high absorption rate and the like are widely researched. The antenna has a structure with a suction-transmission integrated characteristic, namely has a wave absorbing characteristic, can transmit electromagnetic waves at a fixed Frequency band, can replace a Frequency Selective Surface (FSS), is applied to the design of an antenna housing, and can realize the effect of reducing RCS (radar cross section) of an antenna out-of-band double station.
Although research on the absorption-transmission integrated structure is advanced to a certain extent, the absorption rate is low, and the frequency bands of the absorption band and the transmission band are narrow. For example, in the "absorption and transmission integrated frequency selective surface" (application number: CN201810178556.8, publication number: CN108270085A) applied by Nanjing aerospace university, a multilayer absorption and transmission integrated structure is proposed, which is composed of a curved strip-shaped metal patch, a first type square medium substrate, a patch resistor, an air layer, a second type square medium substrate, a square metal patch and a square ring metal patch, so that the low insertion loss wave transmission of a wide band in a C-band is ensured, and the upper and lower wave transmission bands are provided with wave absorption bands, but the wave absorption band bandwidth is very narrow and the absorption rate is low.
The two-layer frequency selective surface structure with the integral absorption and transmission characteristic is also provided in a suction and transmission integral frequency selective surface with wide pass band and low insertion loss published in modern radar periodicals by scholars of Changkun et al. The structure has the characteristics of wide pass band and low insertion loss, but only one wave absorbing band is provided, the wave absorbing bandwidth is narrow, and the function of bilateral wave absorption cannot be realized.
In summary, the existing absorption-transmission integrated structure cannot simultaneously satisfy the characteristics of broadband, high absorption rate and high wave-transmitting rate, and the wave-transmitting window cannot cover the X-band, which is not favorable for the application of the absorption-transmission integrated structure in the design of the stealth radome.
Disclosure of Invention
In order to solve the defects in the prior art, the invention aims to provide a broadband wave-absorbing structure with a high-transmittance wave-transparent window, which has in-band wave-absorbing/out-of-band wave-absorbing characteristics. The antenna has the characteristics of in-band wave absorption/out-of-band wave transmission, can be used for replacing the traditional band-pass frequency selection surface structure, is applied to the design of a stealth antenna cover, ensures the front body of the normal work of the antenna, and realizes the reduction of the scattering cross section of the out-of-band double-station radar.
A structure in which a Surface Plasmon Polariton (SPP) is an electromagnetic wave propagating along the interface direction between a medium and a conductor, exhibits confinement along the interface and is attenuated in the form of an evanescent wave, and can excite a SPP mode in a microwave frequency band is called an artificial Surface Plasmon Polariton (SSPP). Therefore, in addition to the method of designing the transparent and absorptive integrated structure based on the FSS structure, the SSPP can form a specific electromagnetic characteristic of an evanescent wave, and can also be designed as a transparent and absorptive integrated structure having a wide band and a high absorption rate. The invention relates to a cascade structure designed based on FSS and SSPP structures, which is used for solving the problem that the wave-absorbing bandwidth or wave-transmitting bandwidth of the existing absorption-permeation integrated structure is low and further improving the practical application value of the absorption-permeation integrated structure.
The invention is realized by the following technical scheme.
The invention provides a broadband wave-absorbing structure with a high-transmittance wave-transmitting window, which comprises a bottom medium substrate, a middle medium substrate and an upper medium substrate;
a square ring-shaped resonance unit structure is arranged on the bottom layer medium substrate; the middle-layer medium substrate is provided with a square annular resonance unit structure with a groove; the upper medium substrate is a # -shaped structure formed by mutually and vertically arranging four SSPP unit structures in a crossed manner; a strip grid structure is arranged along the surface of the SSPP unit structure which is vertically and crossly arranged;
lumped resistors are arranged on the square ring-shaped resonance unit structure with the grooves and the strip grid structure.
With respect to the above technical solutions, the present invention has a further preferable solution:
preferably, the square ring-shaped resonance unit structure is arranged on the upper surface of the bottom medium substrate, the square ring-shaped resonance unit structure with the groove is arranged on the lower surface of the middle medium substrate, and the strip grid structure is arranged on the inner side surface of the upper medium substrate.
Preferably, the strip grid structure printed on the upper-layer dielectric substrate is an SSPP absorption-transmission integrated structure, and the square ring-shaped resonance unit structure and the grooved square ring-shaped resonance unit structure printed on the bottom-layer dielectric substrate and the middle-layer dielectric substrate are FSS absorption-transmission integrated resonance unit structures.
Preferably, the distance between the bottom medium substrate and the middle medium substrate is larger than the height of the upper medium substrate.
Preferably, the square ring-shaped resonance unit with the groove has a structure that middle parts of four sides of a square ring are bent inwards to form a frame-shaped groove; the midpoint of the metal strip in the groove is provided with a lower total resistance.
Preferably, the strip grid structure is formed by vertically arranging a plurality of strips along the vertical direction of the surface of the SSPP unit structure, and forming a symmetrical structure on the surface of the upper-layer dielectric substrate which is vertically crossed.
Preferably, the plurality of strips are arranged into four sections left and right along the SSPP unit structure, the vertical cross point is arranged between the sections, and the length of each section of strip is sequentially and linearly increased from top to bottom.
Preferably, upper collecting resistors are provided between the vertically adjacent strips and at both ends of the strips on both sides.
Preferably, the upper dielectric substrate is made of FR4 material.
Due to the adoption of the technical scheme, the invention has the following beneficial effects:
the wave-absorbing structure with the wave-transparent window provided by the invention comprises two parts: FSS wave-absorbing structure and SSPP wave-absorbing structure. The FSS structure is a double-layer 2D type absorption and permeation integrated structure and has the characteristics of low-frequency wave absorption and high-frequency wave permeation; the SSPP structure is a 3D structure and has the characteristics of low-frequency wave transmission and high-frequency wave absorption; the 2D structure and the 3D structure are cascaded, so that the functions of bilateral wave absorption and middle wave transmission can be realized. Because the high and low wave-absorbing frequency bands are respectively realized by two different structures, the working frequency bands have larger difference, the coupling effect between the structures during cascading has smaller influence on the overall filtering characteristic, and compared with other single structures, the design has smaller limitation, so that the cascaded wave-absorbing and transmitting integrated structure has wider wave-absorbing frequency band, higher absorption rate, broadband and high wave-transmitting characteristic.
The wave-absorbing bands with the absorptivity of more than 90 percent are respectively 2.89-5.71GHz and 14.7-22.03GHz, the relative bandwidths are respectively not less than 65.5 percent and 39.9 percent, and S, C, Ku and K wave bands are basically covered. The-3 dB wave-transparent frequency band is 7.52-12.4GHz, the relative bandwidth is not less than 49%, the X wave band is covered, the-1 dB wave-transparent frequency band is 8.82-10.88GHz, and the relative bandwidth is not less than 20.9%.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this application, illustrate embodiment(s) of the invention and together with the description serve to explain the principles of the invention:
FIG. 1 is a 3D schematic of the structure of the present invention;
FIG. 2 is a schematic main view of the structure of the present invention;
FIG. 3 is a schematic view of an SSPP imbibition body according to the invention;
FIG. 4 is a schematic structural view of an SSPP imbibition integral unit of the invention;
FIG. 5 is a schematic top view of the FSS imbibition monolithic structure of the invention;
FIG. 6 is a schematic view of the underlying structure of the FSS imbibition monolithic structure of the invention;
FIG. 7 is a graph showing simulation results of transmittance and reflectance in example 1 of the present invention;
FIG. 8 is a graph showing the results of absorptance simulation in example 1 of the present invention;
FIG. 9 is a graph showing simulation results of transmittance and reflectance in example 2 of the present invention;
fig. 10 is a graph showing the results of the absorptance simulation in example 2 of the present invention.
In the figure: 1. a bottom dielectric substrate; 2. a middle layer dielectric substrate; 3. an upper dielectric substrate; 4. a square ring-shaped resonance unit structure; 5. a square ring resonance unit structure with a groove; 6. a lower collective resistance; 7. the SSPP absorbs and penetrates the integrative structure; 71. an SSPP unit structure; 711. a right strap grid structure; 712. a left strip grid structure; 713. a rear strap grid structure; 714. a front strap grid structure; 8. upper collective resistance.
Detailed Description
The present invention will now be described in detail with reference to the drawings and specific embodiments, wherein the exemplary embodiments and descriptions of the present invention are provided to explain the present invention without limiting the invention thereto.
As shown in fig. 1, the present invention provides a broadband wave-absorbing structure with a high transmittance wave-transparent window, which includes a bottom dielectric substrate 1, a middle dielectric substrate 2 and an upper dielectric substrate 3; wherein, the upper surface of the bottom layer medium substrate 1 is provided with a square ring-shaped resonance unit structure 4; the lower surface of the middle layer medium substrate 2 is provided with a square ring-shaped resonance unit structure 5 with a groove; the upper dielectric substrate 1 is a # -shaped structure formed by mutually and vertically arranging four SSPP unit structures 71 in a crossed manner; a stripe grid structure is arranged along the inner side surface of the SSPP unit structure 71 which is vertically crossed; the square ring resonance unit structure 5 with the groove is provided with a lower lumped resistor 6, and the SSPP unit structure 71 is provided with an upper lumped resistor 8.
As shown in fig. 2, in the present embodiment, the distance between the bottom dielectric substrate 1 and the middle dielectric substrate 2 is greater than the height of the upper dielectric substrate 3.
As shown in fig. 3 and 4, in the embodiment of the present invention, the SSPP penetration integrated structure 7 is composed of 4 identical SSPP unit structures 71 arranged in a 2 × 2 array, the SSPP unit structures 71 are composed of right, left and rear, the wave absorbing structure comprises front strip grid structures 711, 712, 713 and 714, the four strip grid structures are the same, the strip grid structures 711 and 712 are in bilateral symmetry, the strip grid structures 713 and 714 are in bilateral symmetry, the strip grid structure 711 is composed of four metal strips, the strips are vertically arranged along the surface vertical direction of the SSPP unit structure 71, the strips are arranged into four sections along the left and right sides of the SSPP unit structure 71, the lengths of the strips are sequentially and linearly increased from top to bottom and are arranged on the surface of the single side of the upper-layer medium substrate 1, the grid structures are mainly used for determining a wave absorbing frequency band, incident electromagnetic waves in a fixed frequency band can be coupled into the structure to generate evanescent waves, and therefore the wave absorbing property is generated. The end of the metal strip of each middle adjacent SSPP unit structure 71 is connected with the upper lumped resistor 8, and the end of the metal strip of each two end SSPP unit structures 71 is connected with the upper lumped resistor 8 at the edge, so as to improve the structure absorption rate.
An SSPP (single stranded polypropylene) absorption and transmission integrated structure 7 is printed on the upper medium substrate 3, an FSS (frequency selective surface) absorption and transmission integrated resonance unit structure is printed on the bottom medium substrate 1 and the middle medium substrate 2, and the SSPP absorption and transmission integrated structure 7 is printed on the surface of one side of the upper medium substrate 1; the square ring-shaped resonance unit structure 4 is printed on the upper surface of the dielectric substrate 1, the upper total resistance 8 is loaded in the SSPP absorption and transmission integrated structure, and the lower total resistance 6 is loaded in the FSS absorption and transmission integrated resonance unit structure.
As shown in fig. 5, the FSS absorption-penetration integrated resonance unit structures are respectively printed on the bottom layer dielectric substrate 1 and the middle layer dielectric substrate 2, the square ring resonance unit structure 5 with the groove is printed on the lower surface of the middle layer dielectric substrate 2, and the square ring resonance unit structure 5 with the groove is formed by bending the middle parts of the four sides of the square ring inwards to form a frame-shaped groove; the resonant cell is loaded with a lower lumped resistor 6, the lower lumped resistor 6 being located at the midpoint of the metal strip in the groove. The square ring resonance unit structure with the groove is a loss layer in an FSS structure and is used for losing electromagnetic waves, and wave absorbing characteristics are generated at a fixed frequency band by utilizing the resonance characteristics of the metal patch and the loss characteristics of the collective resistance.
As shown in fig. 6, the square ring-shaped resonant unit structure 4 of the FSS absorption and transmission integrated resonant unit structure is a square ring-shaped metal patch printed on the upper surface of the bottom layer dielectric substrate 1, and the lower layer structure is a non-loss layer, has a band-stop characteristic in a low frequency band, has a band-pass characteristic in an X band, and can determine a wave-transmitting frequency band of the absorption and transmission integrated structure.
In one embodiment provided by the invention, the dielectric substrate 1 of the upper layer adopts a relative dielectric constant epsilonrFR4 material with 4.4, length w of 17.5-18.5 mm and height h13.8-4.2 mm thick10.4 mm-0.6 mm; the medium substrate 2 and the bottom medium substrate 1 have a relative dielectric constant ∈r2.2 Rogers5880 material having a length and width w of 17.5mm to 18.5mm and a thickness t2＝0.4mm～0.6mm。
The lengths of the four metal strips in the SSPP unit structure 71 are: l1＝1.8mm～2.2mm，l2＝2.1mm～2.5mm，l3＝2.5mm～2.9mm，l43.1mm to 3.5mm, the strip width is s1The distance between the strips is g between 1mm and 1.4mm, and the resistance of the loaded upper collection resistor 8 is 10 Ω to 30 Ω.
The side length of the square ring structure 5 of the square ring resonance unit structure with the groove is p equal to 16.8 mm-17.2 mm, the width of the groove is d equal to 6.2 mm-6.6 mm, the depth of the groove is l equal to 1.7 mm-2.1 mm, and s is equal to2The loaded resistance value is 250 omega-350 omega when the thickness is 0.3 mm-0.7 mm.
The length of the inner ring side of the square ring-shaped resonance unit structure 4 is q-15 mm-15.4 mm, and the width of the square ring strip is s3＝0.3mm～0.7mm。
The height of the air layer between the two layers of the bottom medium substrate 1 and the middle medium substrate 2 is h39.5 mm-10.5 mm, and the height of the air layer between the FSS structure and the SSPP structure is h2＝0.5mm～1.5mm。
The upper dielectric substrate adopts FR4 material.
The following different examples are given to further illustrate the invention.
Example 1:
referring to fig. 1 and 2, in this embodiment, the height of the air layer between the two dielectric substrates of the FSS absorption and permeation integrated unit structure is h312mm, the height of the air layer between the FSS structure and the SSPP structure is h20.5mm, height h of SSPP structure1＝4mm。
Reference to the drawings3, the SSPP penetration integrated structure in this embodiment is composed of four structures with the same structure arranged in a 2 × 2 array, and four metal strips with different lengths, which are respectively as follows: l1＝2mm，l2＝2.3mm，l3＝2.8mm，l43.4 mm. The strips are arranged from short to long in sequence, an upper collecting resistor is loaded in the middle of each metal strip, and the resistance value is 10 omega, as shown in fig. 4.
Referring to fig. 5, the upper resonant unit of the FSS absorption-transmission integrated structure in this embodiment is a square ring-shaped metal patch, the length p of the outer ring edge of which is 17mm, and the width s of which is square2The middle of four sides of the square ring is provided with a groove with the width d of 6.5mm and the depth l of 2mm, and the middle points of metal strips in the four grooves are respectively loaded with a lower collecting resistor with the resistance value of 300 omega.
Referring to fig. 6, the FSS lower layer resonant unit in this embodiment is a square ring-shaped metal patch, the length of the inner ring side is q-15 mm, and the width of the square ring strip is s3＝0.5mm。
The dielectric substrate 1 of the bottom layer has a relative dielectric constant ∈rFR4 material 4.4 with a length w of 18mm and a width h14mm thick t1＝0.5mm。
The relative dielectric constant epsilon is adopted by the bottom layer dielectric substrate 1 and the middle layer dielectric substrate 2r2.2 Rogers5880 material having a length and width w of 18mm and a thickness t2＝0.5mm。
Example 2:
in this example, the same configuration as that of example 1 was applied, and only the following parameters were adjusted, and in the case after adjustment, a wider transmission band and a higher transmittance were obtained although the high-frequency wave-absorbing band was narrowed.
Length l of metal strip in SSPP structure2＝2.4mm，l43.2 mm. The groove depth l of the bending square ring structure on the upper layer of the FSS structure is 1.9mm, the outer ring edge length p thereof is 17.1mm, and the width s of the square ring20.5 mm. Spacing h of SSPP between FSS structures2＝1mm。
The technical effects of the invention are further explained by combining simulation tests as follows:
1. a simulation model:
the cells of the imbibition unitary structures in examples 1 and 2 were modeled in commercial simulation software HFSS — 19.0, and the transmission and reflection coefficients of the structures were calculated by simulation.
2. Simulation content:
2.1 the above simulation model was subjected to electromagnetic simulation using commercial simulation software HFSS-19.0, and S parameter results are shown in FIG. 7.
2.2 Using the data post-processing system of commercial simulation software HFSS — 19.0, the absorption rate of the absorption-transmission integrated structure was calculated based on the transmission coefficient and the reflection coefficient, and the absorption rate curve results are shown in FIG. 8.
3. And (3) simulation results:
fig. 7 shows simulation results of transmittance and reflectance of the model in example 1. In the figure, the solid line is a curve of the transmission coefficient changing with the frequency, the dotted line is a curve of the reflection coefficient changing with the frequency, the abscissa is a frequency range set in the simulation process and has a unit of GHz, and the ordinate is the transmission coefficient and the reflection coefficient obtained by the simulation and has a unit of dB. It can be seen from fig. 7 that the integral absorption-transmission structure in embodiment 1 has better transmission characteristics in the X band, the-3 dB transmission band is 7.52-12.4GHz, the relative bandwidth is not less than 49%, the-1 dB transmission band is 8.82-10.88GHz, and the relative bandwidth is not less than 20.9%.
Fig. 8 is an absorption rate simulation result of the model in example 1. The abscissa in the figure is the frequency range set in the simulation process, the unit is GHz, the ordinate is the absorption rate, and the curve in the figure is an absorption rate simulation curve of the absorption-permeation integrated structure. As can be seen from FIG. 8, the wave-absorbing bands with the structural absorptivity of greater than 90% in example 1 are respectively 2.75-5.87GHz and 13.82-21.77GHz, the relative bandwidths are respectively not less than 72.4% and 44.7%, the wave-absorbing bands basically cover S, C, Ku and K bands, and two wave-absorbing bands are formed on two sides of the X band.
Fig. 9 shows simulation results of transmittance and reflectance of the model in example 2. In the figure, the solid line is a curve of the transmission coefficient changing with the frequency, the dotted line is a curve of the reflection coefficient changing with the frequency, the abscissa is a frequency range set in the simulation process and has a unit of GHz, and the ordinate is the transmission coefficient and the reflection coefficient obtained by the simulation and has a unit of dB. As can be seen from fig. 9, the structure in example 2, the-1 dB wave-transparent band is 8.67 to 11.1GHz, the relative bandwidth is not less than 24.5%, and the structure has higher transmittance compared with the structure in example 1.
Fig. 10 is an absorption rate simulation result of the model in example 2. The abscissa in the figure is the frequency range set in the simulation process, the unit is GHz, the ordinate is the absorption rate, and the curve in the figure is an absorption rate simulation curve of the absorption-permeation integrated structure. The wave-absorbing bands with the structural absorptivity of more than 90% in the embodiment 2 are respectively 2.89-5.71GHz and 14.7-22.03GHz, and the relative bandwidths are respectively not less than 65.5% and 39.9%, compared with the structure in the embodiment 1, the high-frequency wave-absorbing band shifts to high frequency, the absorption bandwidth is narrowed, but the bandwidth of the wave-transmitting band is improved.
The simulation results show that the wave-absorbing material has good wave-transmitting property in the X wave band, two wider wave-absorbing bands are arranged on two sides of the wave-transmitting window, the wave-absorbing frequency band is wide, the transmission insertion loss is low, and the wave-absorbing material has good wave-transmitting property in the band and wave-absorbing property out of the band.
The foregoing description is only exemplary of the invention and is not intended to limit the invention, and it will be apparent to those skilled in the art that various changes and modifications in form and detail may be made without departing from the principles and arrangements of the invention, but these changes and modifications are within the spirit and scope of the invention.
Claims (10)
1. A broadband wave-absorbing structure with a high-transmittance wave-transmitting window is characterized by comprising a bottom medium substrate (1), a middle medium substrate (2) and an upper medium substrate (3);
a square ring-shaped resonance unit structure (4) is arranged on the bottom layer dielectric substrate (1); the middle-layer medium substrate (2) is provided with a square ring-shaped resonance unit structure (5) with a groove; an SSPP structure (7) is arranged on the upper dielectric substrate (3); the SSPP structure (7) is a 2 multiplied by 2 array structure with four SSPP unit structures (71) arranged; the SSPP unit structure (71) is composed of four strip grid structures (711) which are arranged in a crossed mode along the vertical direction;
lumped resistors are arranged on the grooved square ring-shaped resonant unit structure (5) and the strip grid structure (7).
2. The broadband wave-absorbing structure with the high-transmittance wave-transmitting window according to claim 1, wherein the square ring-shaped resonant unit structures (4) are arranged on the upper surface of the bottom dielectric substrate (1), the square ring-shaped resonant unit structures (5) with the grooves are arranged on the lower surface of the middle dielectric substrate (2), and the strip grid structures are arranged on the inner side surface of the upper dielectric substrate (1).
3. The broadband wave-absorbing structure with the high-transmittance wave-transmitting window as claimed in claim 2, wherein the strip grid structure (7) printed on the upper dielectric substrate (3) is an SSPP (single layer sheet) absorption-transmission integrated structure, and the square ring-shaped resonant unit structures (4) and the grooved square ring-shaped resonant unit structures (5) printed on the bottom dielectric substrate (1) and the middle dielectric substrate (2) are FSS absorption-transmission integrated resonant unit structures.
4. The broadband wave-absorbing structure with the high-transmissivity wave-transmitting window of claim 1, wherein the distance between the bottom dielectric substrate (1) and the middle dielectric substrate (2) is greater than the height of the upper dielectric substrate (1).
5. The broadband wave absorbing structure with the high-transmittance wave-transmitting window according to claim 1, wherein the grooved square ring-shaped resonance unit structure (5) is formed by bending the middle parts of the four sides of a square ring inwards to form a frame-shaped groove; and a lower total resistance (6) is arranged at the midpoint of the metal strip in the groove.
6. The broadband wave-absorbing structure with the high-transmissivity wave-transmitting window of claim 1, wherein the strip grid structure is formed by arranging a plurality of strips in a vertical direction along the surface of the SSPP unit structure (71), and a symmetrical structure is formed on the surface of the vertically crossed upper dielectric substrate (3).
7. The broadband wave absorbing structure with the high-transmittance wave-transparent window as claimed in claim 6, wherein the plurality of strips are arranged in four sections along the SSPP unit structure (71), the vertical cross points are between the sections, and the lengths of the strips are increased linearly from top to bottom.
8. The broadband wave-absorbing structure with the high-transmissivity wave-transmitting window of claim 6, wherein upper collecting resistors (8) are arranged between the adjacent strips arranged up and down and at the two ends of the strips at two sides.
9. The broadband wave-absorbing structure with the high-transmissivity wave-transmitting window of claim 1 is characterized in that the upper dielectric substrate (1) is made of FR4 material.
10. The broadband wave-absorbing structure with the high-transmittance wave-transmitting window according to any one of claims 1 to 9, wherein the wave-absorbing bands with the absorptivity of more than 90% of the broadband wave-absorbing structure are respectively 2.89-5.71GHz and 14.7-22.03GHz, and the relative bandwidths are respectively not less than 65.5% and 39.9%; the-3 dB wave-transparent frequency band is 7.52-12.4GHz, and the relative bandwidth is not less than 49%; the wave-transmitting frequency band of-1 dB is 8.82-10.88GHz, and the relative bandwidth is not less than 20.9%.
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| CN115395240B (en) * | 2022-08-30 | 2023-09-01 | 西安电子科技大学 | Wave-transparent window switch type liquid metal ATFSS device |
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