CN114614266A - X-band-pass absorption and transmission integrated frequency selective surface structure - Google Patents
X-band-pass absorption and transmission integrated frequency selective surface structure Download PDFInfo
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- CN114614266A CN114614266A CN202210508086.3A CN202210508086A CN114614266A CN 114614266 A CN114614266 A CN 114614266A CN 202210508086 A CN202210508086 A CN 202210508086A CN 114614266 A CN114614266 A CN 114614266A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
- H01Q15/0006—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
- H01Q15/0013—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective
- H01Q15/0026—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective said selective devices having a stacked geometry or having multiple layers
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Abstract
The invention discloses a suction-permeation integrated frequency selective surface structure with an X-band, and belongs to the technical field of communication. Including resistive loss layer, air bed and band-pass FSS transmission layer, the resistive loss layer is including setting up the hexagonal metal ring paster on medium substrate layer surface, and the center of every side of this hexagonal metal ring paster all inwards recesses and forms S type ring inductor, and the silk screen printing has one deck ruthenium resistance thick liquids at the summit department of hexagonal metal ring paster, ruthenium resistance thick liquids and hexagonal metal ring paster together constitute series RLC circuit to connect in series again with the parallelly connected resonant circuit of equivalent LC that S type ring inductor formed simultaneously. The absorption and transmission integrated frequency selective surface structure can realize broadband band-pass in an X wave band and realize lower electromagnetic wave reflectivity in a 3-11GHz frequency band.
Description
Technical Field
The invention relates to a frequency selective surface structure, in particular to a suction-penetration integrated frequency selective surface structure with an X-band pass.
Background
A Frequency Selective Surface (FSS) is a periodic array structure, which is generally a single-layer or multi-layer infinite planar structure formed by periodically arranging identical units along one-dimensional or two-dimensional directions. The FSS has frequency selective characteristic for space electromagnetic wave propagation, the response characteristic curve of the FSS changes along with the frequency change, the FSS is almost completely transparent to incident electromagnetic waves in certain frequency bands, and the FSS has the characteristic of total reflection to the electromagnetic waves in other frequency bands, and is equivalent to a space electromagnetic wave filter. When the excitation wavelength coincides with the cell resonance size, a band-pass filter characteristic (aperture type FSS) or a band-stop filter characteristic (patch type FSS) can be realized. With the development of the frequency selective surface technology, the current FSS structure not only can realize the function of a filter, but also can realize the functions of wave absorption, polarization conversion and infrared scattering direction inhibition through design, and the functions can be applied to improving the stealth performance of an airplane. A typical frequency selective surface is one that allows electromagnetic waves to pass through in the pass band and reflects electromagnetic waves to other non-critical directions in the non-pass band, thereby reducing the Radar Cross Section (RCS) in a particular direction. But this is only a scan relative to a single station radar, whereas for a two station radar the electromagnetic waves reflected in the other direction are easily intercepted. This absorption-through integral frequency selective surface technique can solve this problem well, and unlike FSS, it can partially absorb the electromagnetic waves of the rejection band to reduce their reflection.
In recent years, with the development of stealth technology, research on a frequency selective surface with an absorption function is more and more, but in most of research, the band-pass frequency range of a frequency selective surface absorption and transmission integrated structure is narrow, and generally only one absorption band is provided, and a multi-absorption band structure has important significance for broadband wave absorption. And part of the structure adopts a mode of welding lumped resistance, so that the manufacturing process is complex and the precision is difficult to ensure. On the other hand, the research on broadband transmission of the absorption-transmission integral frequency selective surface is less, but the broadband transmission characteristic is important in some practical applications such as stealth antenna covers. The absorption-transmission integral frequency selection surface is generally composed of a lossy layer with a resistive film covered on the surface and a band-pass FSS, and the broadband transmission needs the lossy layer and the transmission layer to realize almost lossless transmission within the same target bandwidth.
Disclosure of Invention
The invention aims to solve the problems in the prior art and provides a suction-transmission integrated frequency selective surface structure of an X-band-pass, which can realize broadband band-pass in an X-band and lower electromagnetic wave reflectivity in a 3-11GHz band.
In order to achieve the above object, the technical solution of the present invention is as follows:
the utility model provides a inhale and pass through body frequency selective surface structure of X wave band pass, includes resistive loss layer, air bed and band-pass FSS transmission layer, its characterized in that, resistive loss layer is including setting up the hexagon becket bridle paster on medium substrate layer surface, and the center of every side of this hexagon becket bridle paster all inwards recesses and forms S type ring inductor, and the silk screen printing has one deck ruthenium resistance thick liquids at the summit department of hexagon becket bridle paster, ruthenium resistance thick liquids together constitute series RLC circuit with hexagon becket bridle paster to connect in series again with the parallelly connected resonant circuit of equivalent LC that S type ring inductor formed simultaneously.
Furthermore, the overall appearance of the dielectric substrate layer where the band-pass FSS transmission layer and the resistance loss layer are located is the same, the dielectric substrate layer is of a hexagonal structure with the same size, and the band-pass FSS transmission layer and the resistance loss layer have consistency on a transmission pass band.
Furthermore, the band-pass FSS transmission layer is of a three-layer hexagonal structure, the upper layer is a first medium substrate layer and a hexagonal metal patch arranged on the upper surface of the first medium substrate layer, the lower layer is a third medium substrate layer and a hexagonal metal patch arranged on the lower surface of the third medium substrate layer, the middle layer is a second medium substrate layer and a hexagonal ring patch arranged on the upper surface of the second medium substrate layer, and the hexagonal metal patches which are the same on the upper layer and the lower layer are coupled with the hexagonal ring patch on the middle layer to form the second-order band-pass filter.
Further, the distance R between two opposite sides of the medium substrate layer1=12mm, the hexagonal metal ring patches are arranged in the same shape and orientation at the center of the dielectric substrate layer, and the distance R between two opposite sides of the hexagonal metal ring patches2=9.66mm, the width w of the hexagonal metal ring patch =0.1 mm.
Further, the recess length c =2.2mm of the S-type loop inductor with respect to the side of the hexagonal metal loop patch, and the patch width and the patch gap of the S-type loop inductor are both 0.1 mm.
Furthermore, the vertexes of the hexagonal metal ring patches are not intersected, two ends of each edge of the hexagonal metal ring patches are connected with a trapezoidal metal patch, the inclined edge of each trapezoidal metal patch is overlapped with the outer annular edge of each hexagonal metal ring patch, and ruthenium resistance paste is printed between the two trapezoidal metal patches to connect the two trapezoidal metal patches.
Further, the printing thickness of the ruthenium resistor paste was 0.025mm, and the printing width S3=0.1mm, print length S4=0.2mm, and the total thickness of the trapezoidal metal patch and the hexagonal metal ring patch is 0.025 mm.
Further, the dielectric substrate layer is a dielectric substrate Rogers 4350B with the thickness of 0.254 mm.
Further, the thickness h of the first dielectric substrate layer and the third dielectric substrate layer1=1.5mm, material F4BM, thickness h of the second dielectric substrate layer2=0.1mm, material Rogers 4450B.
Further, two opposite side widths R3=7.79mm of the hexagonal metal patch, and two opposite side widths R4=6.93mm of the central hexagonal hole of the hexagonal ring patch.
In summary, the invention has the following advantages:
1. the S-shaped ring inductor is introduced in the middle of the resistance loss layer, can be equivalent to a parallel LC circuit, and provides a higher inductance value and a lower capacitance value;
2. in the invention, the band-pass FSS transmission layer adopts a three-layer hexagonal structure, and the purpose is to form the same periodic unit with the resistance loss layer, and the two layers have consistency on the transmission passband, thereby realizing lower reflectivity in a 3-11GHz frequency band, realizing band-pass in an 8.3-11GHz frequency band, and realizing the absorption of electromagnetic waves at a 3-6GHz frequency;
3. the band-pass FSS transmission layer comprises an upper layer of hexagonal metal patches, a lower layer of hexagonal metal patches, a medium substrate, a middle layer of hexagonal ring patches and a medium substrate, wherein the two same hexagonal metal patches are coupled with the middle layer with hexagonal holes to form a second-order band-pass filter, low insertion loss and fast roll-off transmission bandwidth are realized at 8.3-11GHz, and the low-frequency part has high reflection coefficient so that the band-pass FSS transmission layer can be used as a ground layer to realize absorption performance.
Drawings
FIG. 1 is a schematic view of the overall structure of an X-band-pass absorption-transmission integral frequency selective surface;
FIG. 2 is a schematic diagram of a resistive loss layer structure;
FIG. 3 is an enlarged view of portion A of FIG. 2;
FIG. 4 is a schematic structural view of upper and lower layers of a bandpass FSS transmission layer;
FIG. 5 is a schematic structural view of an intermediate layer of a bandpass FSS transmission layer;
FIG. 6 is a schematic diagram of the overall structure of a bandpass FSS transmission layer;
FIG. 7 is a graph showing the results of reflection curves and transmission curves;
wherein:
1. the resistor comprises a resistor loss layer, 2, a dielectric substrate layer, 3, an air layer, 4, a hexagonal metal ring patch, 5, a first dielectric substrate layer, 6, a second dielectric substrate layer, 7, a third dielectric substrate layer, 8, a hexagonal metal patch, 9, a hexagonal metal ring patch, 10, ruthenium resistor paste, 11, an S-shaped ring inductor, 12 and a trapezoidal metal patch.
Detailed Description
The present invention will be described in further detail with reference to examples, but the embodiments of the present invention are not limited thereto.
Example 1
The invention provides a suction and transmission integral frequency selective surface structure of an X-band, which comprises a resistance loss layer 1, an air layer 3 and a band-pass FSS transmission layer, wherein the air layer 3 adopts an air gasket with the thickness h =9.7mm to separate the resistance loss layer 1 from the band-pass FSS transmission layer.
As shown in fig. 2, the resistive loss layer 1 includes a hexagonal metal ring patch 4 disposed on the surface of the dielectric substrate layer 2, the center of each side of the hexagonal metal ring patch 4 is recessed inward to form an S-type ring inductor 11, and the S-type ring inductor 11 is introduced in the middle of each side, which can be equivalent to a parallel LC circuit, and can provide a higher inductance value and a lower capacitance value.
A layer of ruthenium resistance paste 10 is printed at the vertex of the hexagonal metal ring patch 4 in a screen printing mode, the ruthenium resistance paste 10 and the hexagonal metal ring patch 4 form a series RLC circuit, and the series RLC circuit is connected with an equivalent LC parallel resonance loop formed by the S-shaped ring inductor 11 in series.
The band-pass FSS transmission layer adopts a three-layer hexagonal structure, and the purpose is to form the same periodic unit with the resistance loss layer 1, and the two periodic units have consistency on a transmission pass band, so that lower reflectivity can be realized in a 3-11GHz frequency band, band-pass is realized in an 8.3-11GHz frequency band, and electromagnetic wave absorption is realized at a 3-6GHz frequency. The resistive portion of the overall structure can be made by screen printing.
Example 2
The embodiment discloses a suction-transmission integral frequency selective surface structure of an X-band pass, which is composed of a resistance loss layer 1 and three layers of band pass FSS (frequency selective surface) as shown in figure 1, wherein the middle parts are separated by air gaskets, the thickness h =9.7mm of an air layer 3, and the air layer 3 is of a 9-layer structure.
The resistive loss layer 1 is a two-layer structure, and includes a dielectric substrate layer 2 and a closed hexagonal metal ring patch 4 disposed on the surface of the dielectric substrate layer 2, and the structure of the resistive loss layer is shown in fig. 2. Distance R1=12mm between two opposite sides of the dielectric base layer 2, the hexagonal metal ring patches 4 are arranged in the center of the dielectric base layer 2 in the same shape and orientation, distance R2=9.66mm between two opposite sides of the hexagonal metal ring patches 4, and width w =0.1mm of the hexagonal metal ring patches 4.
The center of each side of the hexagonal metal ring patch 4 is recessed inward to form an S-shaped ring inductor 11, and the S-shaped ring inductor 11 is introduced in the middle of each side, which can be equivalent to a parallel LC circuit, and can provide a higher inductance value and a lower capacitance value. The recessed length c =2.2mm of the S-type loop inductor 11 with the side of the hexagonal metal loop patch 4 as a reference, and the patch width and the patch gap of the S-type loop inductor 11 are both 0.1 mm.
As shown in fig. 3, the vertices of the hexagonal metal ring patches 4 do not intersect, two ends of each edge of the hexagonal metal ring patches 4 are connected with a trapezoidal metal patch 12, the oblique edge of the trapezoidal metal patch 12 coincides with the outer annular edge of the hexagonal metal ring patch 4, the length S1 of the lower base of the trapezoidal metal patch 12 =0.7mm, the height S2=0.6mm, and the total thickness of the trapezoidal metal patch 12 and the hexagonal metal ring patch 4 is 0.025 mm.
The hexagonal metal ring patches 4 and the trapezoidal metal patches 12 are made of metal copper materials with good electric conduction, and the dielectric substrate layer 2 is a dielectric substrate Rogers 4350B with the thickness of 0.254 mm.
The ruthenium resistor paste 10 was screen-printed between two trapezoidal metal patches 12 to connect them, and the ruthenium resistor paste 10 had a printing thickness of 0.025mm, a printing width S3=0.1mm, and a printing length S4=0.2 mm.
As shown in fig. 4 to 6, the bandpass FSS transmission layer has a three-layer hexagonal structure overlapped with each other, and the overall cell size thereof coincides with the dielectric base layer 2 of the resistive loss layer 1. The upper layer is a first medium substrate layer 5 and a hexagonal metal patch 8 arranged on the upper surface of the first medium substrate layer, the lower layer is a third medium substrate layer 7 and a hexagonal metal patch 8 arranged on the lower surface of the third medium substrate layer, and the middle layer is a second medium substrate layer 6 and a hexagonal ring patch 9 arranged on the upper surface of the second medium substrate layer. Preferably, the first and third dielectric substrate layers 5, 7 have a thickness h1=1.5mm and are F4BM in material, and the second dielectric substrate layer 6 has a thickness h2=0.1mm and is Rogers 4450B in material. Preferably, the hexagonal metal patch 8 has two opposite side widths R3=7.79mm, and the central hexagonal hole of the hexagonal ring patch 9 has two opposite side widths R4=6.93 mm. The hexagonal metal patches 8 on the upper layer and the lower layer which are the same are coupled with the hexagonal ring patches 9 on the middle layer to form a second-order band-pass filter, the low insertion loss and fast roll-off transmission bandwidth is realized at 8.3-11GHz, and the high reflection coefficient is realized at the low frequency, so that the second-order band-pass filter can be used as a ground layer to realize the absorption performance. The hexagonal metal patch 8 and the hexagonal ring patch 9 are both made of metal copper materials.
The frequency selective surface structure is subjected to simulation analysis, a reflection curve S11 and a transmission curve S21 of the frequency selective surface structure are shown in FIG. 7, the polarization mode is TE polarization, the insertion loss at the transmission frequency band of 8.3-11GHz is less than-1 dB, the reflection coefficient at the absorption frequency band of 3-8.3GHz is integrally lower than-10 dB, a good wave absorbing effect can be realized, the reflection of electromagnetic waves in a non-pass band is reduced, and the purpose of low-loss transmission at an X wave band and absorption at a low frequency band is realized.
While the present invention has been described in detail with reference to the illustrated embodiments, it should not be construed as limited to the scope of the present patent. Various modifications and changes may be made by those skilled in the art without inventive step within the scope of the appended claims.
The above description is only a preferred embodiment of the present invention, and is not intended to limit the present invention in any way, and all simple modifications and equivalent variations of the above embodiments according to the technical spirit of the present invention are included in the scope of the present invention.
Claims (10)
1. The utility model provides a inhale integrative frequency selective surface structure that passes through of X wave band pass, includes resistive loss layer (1), air bed (3) and band-pass FSS transmission layer, its characterized in that, resistive loss layer (1) is including setting up hexagon becket paster (4) on medium substrate layer (2) surface, and the center of every side of this hexagon becket paster (4) all inwards recesses and forms S type ring inductor (11), and the silk screen printing has one deck ruthenium resistance thick liquids (10) at the summit department of hexagon becket paster (4), ruthenium resistance thick liquids (10) and hexagon becket paster (4) together constitute series RLC circuit to connect in series again with the parallelly connected resonant circuit of equivalent LC that S type ring inductor (11) formed simultaneously.
2. The absorption and transmission integral frequency selective surface structure of the X-band pass according to claim 1, characterized in that the overall shape of the dielectric substrate layer (2) on which the band pass FSS transmission layer and the resistive loss layer (1) are located is the same, and the band pass FSS transmission layer and the resistive loss layer (1) have the same size of a hexagonal structure, and have the same consistency on the transmission passband.
3. The absorption and transmission integral frequency selective surface structure of the X-band pass according to claim 1 or 2, characterized in that the band pass FSS transmission layer is a three-layer hexagonal structure, the upper layer is a first dielectric substrate layer (5) and a hexagonal metal patch (8) arranged on the upper surface thereof, the lower layer is a third dielectric substrate layer (7) and a hexagonal metal patch (8) arranged on the lower surface thereof, the middle layer is a second dielectric substrate layer (6) and a hexagonal ring patch (9) arranged on the upper surface thereof, and the same hexagonal metal patches (8) of the upper layer and the lower layer are coupled with the hexagonal ring patch (9) of the middle layer to form a second-order band pass filter.
4. The absorption integral frequency selective surface structure of an X-band pass according to claim 1, wherein the distance R1=12mm between two opposite sides of the dielectric substrate layer (2), the hexagonal metal ring patch (4) is disposed at the center of the dielectric substrate layer (2) in the same shape and orientation, the distance R2=9.66mm between two opposite sides of the hexagonal metal ring patch (4), and the width w =0.1mm of the hexagonal metal ring patch (4).
5. The suction integral frequency selective surface structure of an X-band bandpass according to claim 1, wherein the recess length c =2.2mm of the S-type loop inductor (11) with reference to the side of the hexagonal metal loop patch (4), and the patch width and the patch gap of the S-type loop inductor (11) are both 0.1 mm.
6. The absorption and transmission integrated frequency selective surface structure of an X-band pass is characterized in that the vertexes of the hexagonal metal ring patches (4) are not intersected, two ends of each side of each hexagonal metal ring patch (4) are respectively connected with one trapezoidal metal patch (12), the inclined side of each trapezoidal metal patch (12) is coincided with the outer ring side of each hexagonal metal ring patch (4), and ruthenium resistance paste (10) is printed between the two trapezoidal metal patches (12) to connect the two trapezoidal metal patches.
7. The absorbing integral frequency selective surface structure of an X-band bandpass as claimed in claim 6, characterized in that the ruthenium resistor paste (10) is printed with a thickness of 0.025mm, a printing width S3=0.1mm, a printing length S4=0.2mm, and a total thickness of the trapezoidal metal patch (12) and the hexagonal metal ring patch (4) is 0.025 mm.
8. The absorption-transmission integral frequency selective surface structure of an X-band bandpass according to claim 1, wherein the dielectric substrate layer (2) is a dielectric substrate Rogers 4350B with the thickness of 0.254 mm.
9. The structure of claim 3, wherein the thickness h of the first dielectric substrate layer (5) and the third dielectric substrate layer (7) is equal to1=1.5mm, material F4 BM; thickness h of second dielectric substrate layer (6)2=0.1mm, material Rogers 4450B.
10. The absorbing integral frequency selective surface structure of an X-band pass according to claim 3, characterized in that the width of two opposite sides of the hexagonal metal patch (8) R3=7.79mm, and the width of two opposite sides of the central hexagonal hole of the hexagonal ring patch (9) R4=6.93 mm.
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