CN112821081A - Absorption and transmission integrated frequency selective surface with high-frequency broadband wave absorption and low-frequency wave transmission - Google Patents

Absorption and transmission integrated frequency selective surface with high-frequency broadband wave absorption and low-frequency wave transmission Download PDF

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Publication number
CN112821081A
CN112821081A CN202110105340.0A CN202110105340A CN112821081A CN 112821081 A CN112821081 A CN 112821081A CN 202110105340 A CN202110105340 A CN 202110105340A CN 112821081 A CN112821081 A CN 112821081A
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layer
frequency
absorption
lambda
wave
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谢宇平
侯新宇
郭太行
叶琰
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University of Shanghai for Science and Technology
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University of Shanghai for Science and Technology
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00—Details of, or arrangements associated with, antennas
    • H01Q1/42—Housings not intimately mechanically associated with radiating elements, e.g. radome

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Abstract

The invention discloses a suction-penetration integrated frequency selective surface with high-frequency broadband wave absorption and low-frequency wave transmission, which comprises a top-layer absorption layer, a middle resonance layer and a bottom-layer resonance layer, wherein a first medium substrate is arranged between the top-layer absorption layer and the middle resonance layer, a second medium substrate is arranged between the middle-layer resonance layer and the bottom-layer resonance layer, each layer comprises a plurality of metal patch units, and each unit of the top-layer wave absorption layer is composed of a resistive YeLu spray cooling cross structure; each unit of the middle resonance layer consists of a square ring-shaped metal strip, a circular metal sheet and a square metal strip, the square metal strip is respectively connected with the circular metal sheet through rotational symmetry, and the circular metal sheets are distributed in axial symmetry; each unit of the bottom resonance layer is formed by combining a circular metal sheet and a square metal strip, and the circular metal sheet and the square metal strip are respectively distributed in axial symmetry; the top absorbing layer is connected with the first medium substrate; the middle resonance layer, the second medium substrate and the bottom layer resonance layer are connected. The invention has excellent wave-absorbing performance.

Description

Absorption and transmission integrated frequency selective surface with high-frequency broadband wave absorption and low-frequency wave transmission
Technical Field
The invention belongs to the technical field of antenna stealth, and mainly relates to a wave-absorbing and wave-transmitting integrated frequency selection surface which can be used for an antenna cover and electromagnetic shielding.
Background
The Frequency Selective Surface (FSS) is a two-dimensional periodic structure formed of specific cells and their arrangement, and exhibits good propagation performance in a specific frequency band and near total reflection characteristics in other frequency bands. Among them, the shape of the cells, the cell pitch, the arrangement, the number of layers of the multilayer, the dielectric loading method, etc. all have a great influence on the frequency response of the FSS. Frequency selective surfaces are used in a wide range of applications, the most important of which is the radome surface. Radomes are commonly used to protect antennas from the physical environment, and in the reduction of the radar scattering cross section (RCS), the detection of antennas by other electromagnetic devices must be dealt with. A dielectric radome allows outgoing transmissions to pass through with as little distortion and loss as possible, but has the disadvantage that incident detection signals can also pass through the radome in the same way. These incident detection signals contact the antenna and reflect back to the receiving device, giving a relatively large return signal. In order to solve the above problems, an ideal scheme is proposed to allow the electromagnetic wave emitted from the antenna to transmit freely without interference and to absorb the external detection signal.
In recent years, many groups of researchers have researched and designed a plurality of absorption-penetration integrated structures, and in order to realize the characteristic of out-of-pass band wave absorption, a common method is to load lumped resistors on an impedance surface, and along with the increase of frequency, the application of the lumped resistors is gradually limited, and the lumped resistors are not beneficial to planar integration and batch production. For example, Kiani at Macquarie university, australia, proposes a composite structure consisting of a conductive cross FSS and a resistive cross FSS for 5.25GHz WLAN security. The conductive FSS alone acts as a bandpass filter, while the resistive FSS acts as a getter. Costa, university of Pisa, italy, also uses a conductive FSS as a bandpass filter, while a resistive FSS absorbs incident electromagnetic waves in the higher frequency band and optimizes its absorption bandwidth accordingly. Aiming at the curved surface shape of the front end of the wing of the aircraft, Alireza of the Sweden Industrial school designs a conformal Jaumann wave absorber, which can effectively reduce the single station RCS of the wing of the aircraft within the broadband range of 1-16 GHz. They are generally associated with problems of poor absorption properties.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provides a suction-transmission integrated frequency selection surface with high-frequency broadband wave absorption and low-frequency wave transmission, which is convenient for planar integration and batch production and improves the stability of a pass band and the out-of-band selection characteristic.
The technical idea of the invention is to design a suction-penetration integrated frequency selection surface structure of low-frequency wave-transparent high-frequency broadband wave absorption, and realize a high-frequency broadband absorption layer by adopting a high-precision patterned resistive film, so as to optimize the absorption layer and minimize the insertion loss of the absorption layer to a low-frequency band. Meanwhile, a band-pass FSS structure with a low-frequency band-pass and a high-frequency large reflection window is designed, and the layer consists of two resonance FSS layers. And then, the band-pass FSS structure is combined with the absorption layer to finally realize an integrated thin type absorption-permeation integrated frequency selection surface, and under the normal incidence condition, the integrated thin type absorption-permeation integrated frequency selection surface transmits in a lower frequency band (2.9-3.2GHz) and absorbs in a higher frequency band (8.6-15.1 GHz).
According to the above thought, the absorption-transmission integrated frequency selective surface with high-frequency broadband wave absorption and low-frequency wave transmission comprises a top absorption layer, a middle resonance layer and a bottom resonance layer which are sequentially stacked from top to bottom, wherein a first medium substrate is arranged between the top absorption layer and the middle resonance layer, a second medium substrate is arranged between the middle resonance layer and the bottom resonance layer, each layer comprises mxn metal patch units, and the absorption-transmission integrated frequency selective surface is characterized in that:
each unit of the top wave absorbing layer is composed of a resistive Yelu cold cross structure;
each unit of the middle resonance layer consists of a square ring-shaped metal strip, four circular metal sheets and four square metal strips, the square metal strips are respectively connected with the four circular metal sheets through rotational symmetry, and the four circular metal sheets are distributed in axial symmetry;
each unit of the bottom resonance layer is formed by combining four round metal sheets and eight square metal strips, and the four round metal sheets and the eight square metal strips are respectively distributed in axial symmetry;
the first dielectric substrate is of a PMI foam structure, and the dielectric constant of the first dielectric substrate is 1.05;
the second dielectric substrate is composed of a PI structure and has a dielectric constant of 3.2;
the top absorbing layer is fixedly connected with the first medium substrate, and the top absorbing layer and the first medium substrate jointly act to generate a broadband wave absorbing effect;
the middle resonance layer, the second medium substrate and the bottom resonance layer are fixedly connected and jointly generate a wave-transmitting effect.
Preferably, the resistive Jersey cold cross structure is a resistive film, the resistance value ranges from 33 Ω/sq to 40 Ω/sq, and the side length l1Has a value range of 0.078 lambdat≤l1≤0.086λt，λt＝c/ftWherein λ istIs the passband center frequency ftCorresponding wavelength, c is the speed of light in vacuum, ftIs the passband center frequency.
Preferably, the resistive spray cooling cross structure comprises cross resistive films and four rectangular resistive films respectively positioned at the top ends of the cross resistive films, and the length l of each rectangular resistive film2The value range is 0.028 lambdat≤l2≤0.035λtLength l of each crossed resistive film3The value range is 0.054 lambdat≤l3≤0.058λtWidth w1The value range is 0.009 lambdat≤w1≤0.012λt。
Preferably, the side length l of the square ring-shaped metal strip4The value range is 0.075 lambdat≤l4≤0.078λtThe diameter d of the circular metal sheet is in the range of 0.013 lambdat≤d≤0.016λtWidth w of square metal strip2The value range is 0.008 lambdat≤w2≤0.011λtWidth w between square ring-shaped metal strip and square metal strip3The value range is 0.004 lambdat≤w3≤0.006λt。
Preferably, the length l between the metal strips5The value range is 0.046 lambdat≤l5≤0.050λtThe diameter d of the circular metal sheet is in the range of 0.013 lambdat≤d≤0.016λtWidth w of square metal strip4The value range is 0.004 lambdat≤w4≤0.006λt
Compared with the prior art, the invention has the following advantages:
1. the invention can realize the effect of the omnidirectional resistor by only using one resistive film in each unit, and does not need to weld a plurality of lumped resistors, thereby being convenient for plane integration and batch production.
2. The invention adopts a top, middle and bottom multilayer structure, can generate a pass band and a wider wave-absorbing frequency band, and has good wave-transmitting and wave-absorbing effects.
3. According to the invention, because the centrosymmetric pattern design is adopted in each layer structure, the frequency selection surface is insensitive to polarization, and can still maintain stable performance under the condition of oblique incidence of 0-45 degrees.
Drawings
FIG. 1 is a schematic view of the overall structure of the present invention;
FIG. 2 is a schematic diagram of the top layer structure of the present invention;
FIG. 3 is a schematic view of an interlayer structure of the present invention;
FIG. 4 is a schematic bottom structure of the present invention;
FIG. 5 is a plot of transmission and reflection coefficients for a frequency selective surface with vertical polarization simulated using an embodiment of the present invention;
FIG. 6 is a graph of transmission and reflection coefficients corresponding to an increase in incident angle from 0 degrees to 45 degrees in TE polarization for a frequency selective surface simulated with an embodiment of the present invention;
fig. 7 is a graph of transmission and reflection coefficients corresponding to an increase in the angle of incidence from 0 to 45 degrees in TM polarization for a frequency selective surface simulated using an embodiment of the present invention.
Detailed Description
The embodiments and effects of the present invention will be further described with reference to the accompanying drawings:
referring to fig. 1, the present embodiment sequentially includes, from top to bottom: a top absorbing layer 1, a middle resonance layer 3 and a bottom resonance layer 5, each layer comprising m × n pieces of goldBelongs to a patch unit, wherein m is more than or equal to 2, and n is more than or equal to 2. A first dielectric substrate 2 is arranged between the top absorbing layer 1 and the middle resonance layer 3, the upper surface of the first dielectric substrate 2 is connected with the top absorbing layer 1, and the lower surface of the first dielectric substrate 2 is connected with the middle layer 3; a second dielectric substrate 4 is arranged between the middle resonance layer 3 and the bottom resonance layer 5, the upper surface of the second dielectric substrate 4 is connected with the middle resonance layer 3, and the lower surface of the second dielectric substrate 4 is connected with the bottom resonance layer 5; the first dielectric substrate 2 has a thickness h15mm, relative dielectric constant εr1Medium 1.05; the second dielectric substrate 4 has a thickness h20.1mm, relative dielectric constant εr2Medium 3.2.
Referring to fig. 2, each cell of the top absorbing layer is composed of a resistive yersinia cross structure. Wherein:
the resistive Jersey cold cross structure 11 adopts a resistive film, the resistance value ranges from 33 omega/sq to 40 omega/sq, and the side length l of the resistive film1Has a value range of 0.078 lambdat≤l1≤0.086λtLength l of each rectangular resistive film2The value range is 0.028 lambdat≤l2≤0.035λtLength l of each crossed resistive film3The value range is 0.054 lambdat≤l3≤0.058λtWidth w1The value range is 0.009 lambdat≤w1≤0.012λt。
In this embodiment, the parameters are not limited to the following values:
the resistance value of the yarrow cold cross-shaped resistive film is 36 omega/sq, and the side length is l1Length l of rectangular resistive film 8mm23mm, cross resistance film length l35.5mm, width w1＝1mm。
Referring to fig. 3, each unit of the middle resonance layer is composed of a square ring-shaped metal strip 31, four circular metal sheets 32, and four square metal strips 33. Wherein:
side length l of square ring type metal strip4The value range is 0.075 lambdat≤l4≤0.078λtThe diameter d of the circular metal sheet is within a rangeIs 0.013 lambdat≤d≤0.016λtWidth w of square metal strip2The value range is 0.008 lambdat≤w2≤0.011λtWidth w between square ring-shaped metal strip and square metal strip3The value range is 0.004 lambdat≤w3≤0.006λt。
In this embodiment, the parameters are not limited to the following values:
side length l of square ring type metal strip47.5mm, the diameter d of the round metal sheet is 1.4mm, and the width w of the square metal strip20.9mm, width w between square ring-shaped metal strip and square metal strip3＝0.5mm。
Referring to fig. 4, each unit cell of the bottom resonance layer is composed of four circular metal sheets 51 and eight square metal strips 52. Wherein:
length l between metal strips5The value range is 0.046 lambdat≤l5≤0.050λtThe diameter d of the circular metal sheet is in the range of 0.013 lambdat≤d≤0.016λtWidth w of square metal strip4The value range is 0.004 lambdat≤w4≤0.006λt。
In this embodiment, the parameters are not limited to the following values:
the diameter d of the round metal sheet is 1.4mm, and the width w of the square metal strip4＝0.5mm。
The technical effect of the present example is demonstrated by simulation and experiment as follows.
1. Simulation conditions are as follows:
in this embodiment, the number m and n of the metal patch units in each layer are both infinite, and the transmission coefficient and the reflection coefficient of the embodiment of the present invention are simulated by using commercial simulation software CST.
2. Simulation content and results:
simulation 1, the frequency selective surface of this example was simulated with TE polarization under normal incidence conditions to obtain a transmission coefficient curve and a reflection coefficient curve, as shown in fig. 5. As can be seen from fig. 5: the center frequency of the pass band of the frequency selection surface is 3.0GHz, the insertion loss is 0.71dB, the insertion loss of the transmission band is still less than-1 dB, and the transmission performance is good. The wave-absorbing frequency band on the right side of the passband is 8.6-15.1GHz, the reflection coefficients in the frequency band are all less than-20 dB, namely the absorptivity is greater than 95%.
Simulation 2, the frequency selective surface of the present example was simulated with increasing incidence angle from 0 degree to 45 degrees in TE polarization and TM polarization, respectively, to obtain transmission coefficient and reflection coefficient curves, as shown in fig. 6 and 7. Wherein, fig. 6 is a transmission coefficient and reflection coefficient curve obtained under TE polarization; fig. 7 is a graph of the transmission and reflection coefficients obtained for TM polarization. As can be seen from fig. 6: under TE polarization, when the incident angle range is more than or equal to 0 degrees and less than or equal to 45 degrees, the passband of the frequency selection surface, the zero point and the wave absorbing effect are stable. As can be seen from fig. 7: under TM polarization, when the incident angle range is more than or equal to 0 degrees and less than or equal to 45 degrees, the passband of the frequency selection surface, the zero point and the wave absorbing effect are basically kept good. Under the condition of large incident angle, the reflection coefficient in the high-frequency wave absorption frequency band is still less than-10 dB, and the wave absorption performance is good.
The simulation results show that the absorption-transmission integrated frequency selective surface realizes transmission of electromagnetic waves with low insertion loss at low frequency and effective wave absorption in a high-frequency wide frequency band, and the frequency selective surface can show good and stable pass band, zero point and wave absorption effects when incident at different angles under TE polarization and TM polarization.
The above embodiments are preferred embodiments of the present invention, but the present invention is not limited to the above embodiments, and any other changes, modifications, substitutions, combinations, and simplifications which do not depart from the spirit and principle of the present invention should be construed as equivalents thereof, and all such changes, modifications, substitutions, combinations, and simplifications are intended to be included in the scope of the present invention.

Claims (6)

1. The utility model provides a inhale and pass through integration frequency selective surface with high frequency broadband is inhaled ripples and low frequency wave-transparent, top layer absorbed layer (1), middle resonance layer (3) and bottom resonance layer (5) that stack gradually including top-down are equipped with first medium base plate (2) between top layer absorbed layer (1) and middle resonance layer (3), are equipped with second medium base plate (4) between middle level (3) and bottom resonance layer (5), every layer includes a mxn metal paster unit, its characterized in that:
each unit of the top wave absorbing layer (1) consists of a resistive Yelu cold cross structure (11);
each unit of the middle resonance layer (3) consists of a square ring-shaped metal strip (31), four circular metal sheets (32) and four square metal strips (33), the square metal strips (33) are respectively connected with the four circular metal sheets (32) through rotational symmetry, and the four circular metal sheets (32) are distributed in axial symmetry;
each unit of the bottom layer resonance layer (5) is formed by combining four round metal sheets (51) and eight square metal strips (52), and the four round metal sheets (51) and the eight square metal strips (52) are respectively distributed in axial symmetry;
the top absorbing layer (1) is fixedly connected with the first medium substrate (2), and the top absorbing layer and the first medium substrate act together to generate a broadband wave absorbing effect;
the middle resonance layer (3), the second medium substrate (4) and the bottom resonance layer (3) are fixedly connected and jointly generate a wave-transmitting effect.
2. The integrated frequency selective surface with high-frequency broadband absorption and low-frequency wave transmission of claim 1, wherein the resistive jeans cross structure (11) is a resistive film with a resistance value ranging from 33 Ω/sq to 40 Ω/sq, and a side length l1Has a value range of 0.078 lambdat≤l1≤0.086λt，λt＝c/ftWherein λ istIs the passband center frequency ftCorresponding wavelength, c is the speed of light in vacuum, ftIs the passband center frequency.
3. The integrated frequency-selective surface with high-frequency broadband absorption and low-frequency wave transmission of claim 1, wherein said resistive jersey cold cross structure (11) is formed by crossed resistive films and four rectangular resistive films on top of the crossed metal, each having a length l2The value range is 0.028 lambdat≤l2≤0.035λtLength l of each crossed resistive film3The value range is 0.054 lambdat≤l3≤0.058λtWidth w1The value range is 0.009 lambdat≤w1≤0.012λt。
4. The absorption-transmission integrated frequency selective surface with high-frequency broadband absorption and low-frequency wave transmission according to claim 1, wherein the square ring-shaped metal strip (31) has a side length l4The value range is 0.075 lambdat≤l4≤0.078λtThe diameter d of the circular metal sheet (32) is in the range of 0.013 lambdat≤d≤0.016λtWidth w of square metal strip (33)2The value range is 0.008 lambdat≤w2≤0.011λtWidth w between square ring-shaped metal strip and square metal strip3The value range is 0.004 lambdat≤w3≤0.006λt。
5. The integrated absorption-transmission frequency selective surface with high-frequency broadband absorption and low-frequency transmission according to claim 1, wherein the length l between the metal strips5The value range is 0.046 lambdat≤l5≤0.050λtThe diameter d of the circular metal sheet (51) is in the range of 0.013 lambdat≤d≤0.016λtWidth w of square metal strip (52)4The value range is 0.004 lambdat≤w4≤0.006λt。
6. The absorption-transmission integrated frequency selective surface with high-frequency broadband wave absorption and low-frequency wave transmission according to claim 1, characterized in that:
the first dielectric substrate (2) has a thickness h1 of 5mm and a relative dielectric constant epsilonr1Medium 1.05;
the second dielectric substrate (4) has a thickness h2 of 0.1mm and a relative dielectric constant εr2Medium 3.2.
CN202110105340.0A 2021-01-26 2021-01-26 Absorption and transmission integrated frequency selective surface with high-frequency broadband wave absorption and low-frequency wave transmission Withdrawn CN112821081A (en)

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Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113258297A (en) * 2021-05-27 2021-08-13 光谷技术有限公司 Metamaterial filtering structure and gateway equipment
CN113410650A (en) * 2021-06-21 2021-09-17 山西大学 Low-profile absorption/transmission integrated anti-interference device with ultra-wide absorption band
CN113540819A (en) * 2021-07-12 2021-10-22 上海大学 Wave absorbing structure based on jea cold cross pattern
CN114361806A (en) * 2022-01-11 2022-04-15 西安电子科技大学 Miniaturized suction-penetration integrated frequency selective surface
CN114498052A (en) * 2022-02-09 2022-05-13 西安电子科技大学 Low-profile broadband super-surface structure with wave-absorbing and wave-transmitting amplitude regulation and control characteristics
CN114614266A (en) * 2022-05-11 2022-06-10 成都飞机工业（集团）有限责任公司 X-band-pass absorption and transmission integrated frequency selective surface structure
CN115360526A (en) * 2022-09-19 2022-11-18 西安电子科技大学 Frequency selection super surface structure with double wave-transmitting frequency bands and three wave-absorbing frequency bands

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113258297A (en) * 2021-05-27 2021-08-13 光谷技术有限公司 Metamaterial filtering structure and gateway equipment
CN113410650A (en) * 2021-06-21 2021-09-17 山西大学 Low-profile absorption/transmission integrated anti-interference device with ultra-wide absorption band
CN113540819A (en) * 2021-07-12 2021-10-22 上海大学 Wave absorbing structure based on jea cold cross pattern
CN114361806A (en) * 2022-01-11 2022-04-15 西安电子科技大学 Miniaturized suction-penetration integrated frequency selective surface
CN114498052A (en) * 2022-02-09 2022-05-13 西安电子科技大学 Low-profile broadband super-surface structure with wave-absorbing and wave-transmitting amplitude regulation and control characteristics
CN114498052B (en) * 2022-02-09 2023-04-18 西安电子科技大学 Low-profile broadband super-surface structure with wave-absorbing and wave-transmitting amplitude regulation and control characteristics
CN114614266A (en) * 2022-05-11 2022-06-10 成都飞机工业（集团）有限责任公司 X-band-pass absorption and transmission integrated frequency selective surface structure
CN114614266B (en) * 2022-05-11 2022-08-12 成都飞机工业（集团）有限责任公司 X-band-pass absorption and penetration integrated frequency selective surface structure
CN115360526A (en) * 2022-09-19 2022-11-18 西安电子科技大学 Frequency selection super surface structure with double wave-transmitting frequency bands and three wave-absorbing frequency bands
CN115360526B (en) * 2022-09-19 2023-07-18 西安电子科技大学 Frequency selective super-surface structure with double wave-transmitting frequency bands and three wave-absorbing frequency bands

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Application publication date: 20210518