CN114361806A - Miniaturized suction-penetration integrated frequency selective surface - Google Patents
Miniaturized suction-penetration integrated frequency selective surface Download PDFInfo
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Abstract
The invention discloses a miniaturized absorption-permeation integrated frequency selective surface, which comprises an upper dielectric substrate and a lower dielectric substrate, wherein a cascade medium is filled between the upper dielectric substrate and the lower dielectric substrate; arranging a lumped element loaded metal unit on the upper side of the upper-layer dielectric substrate, wherein the lumped element loaded metal unit is of a cross-diagonal bending composite structure; an upper metal unit and a lower metal unit are arranged on the upper side and the lower side of the lower dielectric substrate, and the upper metal unit and the lower metal unit are small metal units respectively corresponding to the cross-diagonal bending composite structure; short metal sections and metalized through holes penetrating through the lower-layer medium substrate are arranged on the upper side and the lower side of the periphery of the lower-layer medium substrate. The antenna has high miniaturization degree and low cost, improves the stability of the structural angle, and effectively improves the scattering property of the antenna while ensuring the radiation property of the antenna by taking the FSR planar array as the antenna housing of the microstrip antenna.
Description
Technical Field
The invention belongs to the technical field of radar stealth, and further relates to a miniaturized absorption-transmission integrated frequency selection surface in the technical field of electromagnetic fields and microwaves.
Background
The absorption-transmission integral Frequency selective surface (FSR) is a periodic electromagnetic structure which is based on a traditional mode Frequency selective surface and simulates the characteristics of a Circuit-analog absorber (CAA) by an integrated Circuit. The FSR structure relies on the wave absorbing characteristic to realize the reduction of the double-station RCS of the target, and when the FSR structure and the radome body are integrally designed, the FSR structure can even adopt a plane structure as an antenna skin to be arranged in the radome supporting layer, so that the design and the processing are simplified. Therefore, the research on the absorption-transmission integral frequency selection surface has become one of the key issues in the antenna stealth technology, and has great significance in the development of the stealth technology.
The existing absorption and penetration integrated frequency selection surface can be divided into a two-dimensional wave-absorbing frequency selection structure and a three-dimensional wave-absorbing frequency selection structure according to different structural sizes, and the two-dimensional FSR can be divided into the following types according to structural performance: the first type is a single-side absorption FSR, which has a wave-absorbing frequency band outside a working frequency band (wave-transparent frequency band), and can be divided into an absorption-transmission type FSR and a transmission-absorption type FSR; the second type is a bilateral absorption FSR, and two ends of a working frequency band are respectively provided with a wave absorption frequency band, namely an absorption-permeation-absorption FSR; the third type is a multi-frequency transmission-type FSR, which has one or more corresponding wave-absorbing frequency bands outside two or more working frequency bands, and currently, FSRs of the type "transmission-absorption-transmission", "absorption-transmission-absorption-transmission" and the like are published. The FSR has considerable development prospect in the aspects of expanding wave-transparent bandwidth, improving miniaturization degree, reducing transition zone, reducing processing cost and the like after decades of development.
In 2012, the team of professor Agostino Monorchio of UniPi, Italy, first mentioned the periodic structure of FSR in its published article "A Frequency selective radius with side absorbing properties" (IEEE Transactions on Antennas and amplification, 2012,60(6): 2740-. The FSR adopts a resistance film ring, a dielectric layer and a band-pass type Frequency Selective Surface (FSS) to realize the integral characteristic of 'transmission-absorption', can realize wave transmission in a specific Frequency band, and realizes wave absorption at a high Frequency. The structure is composed of an upper resistance film layer with wave absorbing performance and a lower FSS layer, wherein the FSS layer is realized by a crossed Yelu cold cross structure. The FSR design can realize wave-transmitting characteristic at 6.4GHz and wave-absorbing effect of about-15 dB within a broadband range of 10-18 GHz. The miniaturization degree of the FSR can reach 0.169 lambda, the lambda is the wavelength at the wave-transmitting frequency point, and the transmission-absorption transition band is 3.6 GHz.
In 2017, a double-layer two-dimensional miniaturized FSR structure is designed in a paper published by doctor of Yibo of a national defense science and technology university Liushanjian team in the national defense science and technology university and the like in the application research of a novel electromagnetic structure in stealth and electromagnetic protection (the national defense science and technology university, 2017). The structure adopts a concentric metal grid-square ring-patch loss layer, a Polymethacrylimide (PMI) foam layer and an interdigital miniaturized band-pass FSS which are connected by lumped resistors to realize the integral characteristic of 'transmission-absorption'. The wave-transmitting characteristic can be realized at 1.7GHz, and the wave-absorbing characteristic with the wave-absorbing rate higher than 90% can be realized in the frequency band of 7.5-18 GHz. The miniaturization degree of the FSR can reach 0.057 lambda, the lambda is the wavelength at the wave-transmitting frequency point, and the transmission-absorption transition band is 5.8 GHz. In order to solve the problem that a transmission-absorption transition band is large, the group improves the structure, and carries out lumped capacitance loading on a band-pass FSS to enable the reflection frequency band to be close to the low frequency so as to cover the low-frequency energy consumption band of the impedance layer and form a wave absorption frequency band expanding to the low-frequency end. At the moment, the FSR can realize wave-transparent property at 1.6GHz, and can realize wave-absorbing property with wave-absorbing rate not less than 90% in 6-17.1GHz frequency band. Meanwhile, the miniaturization degree is reduced to 0.056 lambda, lambda is the wavelength at the wave-transmitting frequency point, and the transmission-absorption transition band is reduced to 4.4 GHz.
In 2019, Saikat Chandra Bakshi et al published a paper "A frequency selective surface based configurable ras with a switching transmission/reflection band" (IEEE Antennas and Wireless presentation Letters,2019,18(1):29-33) designed a two-layer two-dimensional single-polarized reconfigurable FSR structure. The structure adopts the integrated characteristics of lumped resistance loading type impedance surface, air layer and pass-impedance adjustable FSS of loading PIN tube to realize switchable absorption and penetration of states: at 2.88GHz, when the PIN tube is positively biased, the FSS resonates with incoming waves, and the reflection characteristic is presented; the scale of the reverse-biased time strip of the PIN tube is far smaller than the wavelength of an incoming wave, and the PIN tube has a transmission characteristic. The wave absorption characteristic is realized in the frequency band of 3.9-12 GHz. Compared with the prior design, the transmission-absorption transition band of the FSR is reduced to 1.02GHz, but the FSR has polarization sensitivity, and the unit size is increased to 0.19 lambda, wherein lambda is the wavelength at the wave-transparent frequency point.
In 2019, Yanrui Chen et al proposed a two-dimensional "transmission-absorption" FSR based on a "well" -shaped impedance surface in a published document "A rasorber measurement surface design: S-band transmission and X-band attenuation" (2019Photonics & Electromagnetics Research Symposium-wall (PIERS-wall. 2019,10.1109: 855) -857), which pulls the wave-transparent center to zero frequency and improves miniaturization degree. The designed structure can realize wave-transparent property at 0-2.6GHz, and wave-absorbing property with wave-absorbing rate not less than 80% at 8-14GHz frequency band, and the miniaturization degree is reduced to 0.065 lambda, lambda is the wavelength at the central frequency point of the wave-transparent band, but the transmission-absorption transition band is increased to 5.4 GHz.
By comparing and analyzing the performance of the recent 'transmission-absorption' type FSR transition band such as bandwidth and miniaturization degree, the FSR has been improved on the problem of reduction of the transmission-absorption transition band, and the narrowest transition band is 1.02 GHz. The miniaturization degree is far less than the development level of 0.02 lambda which is generally achieved by FSS at present, and even if the unit size reaches within 0.1 lambda, the performance such as transition bandwidth is used as a sacrifice. In summary, the problems to be solved in the performance improvement aspect of the "through-suction" type FSR are the reduction of the transition band and the improvement of the miniaturization degree under the narrow transition band.
Disclosure of Invention
The invention aims to overcome the defects in the prior art, solve the problem that a 'transmission-absorption' type FSR cannot simultaneously meet the requirements of narrow transition band bandwidth and smaller unit size, provide a miniaturized transmission-absorption integrated frequency selection surface, and aim to improve the miniaturization degree of an FSR structure under the condition of meeting the requirement of reducing the transition band bandwidth between a 'transmission-absorption' type FSR low-frequency transmission band and a high-frequency wave-absorbing band.
The invention is realized by the following technical scheme.
The invention provides a miniaturized absorption and permeation integrated frequency selective surface which comprises an upper dielectric substrate, a lower dielectric substrate and a cascade medium filled between the upper dielectric substrate and the lower dielectric substrate;
arranging a lumped element loaded metal unit on the upper side of the upper-layer dielectric substrate, wherein the lumped element loaded metal unit is of a cross-diagonal bending composite structure;
an upper metal unit and a lower metal unit are arranged on the upper side and the lower side of the lower dielectric substrate, and the upper metal unit and the lower metal unit are small metal units respectively corresponding to the cross-diagonal bending composite structure;
short metal sections and metalized through holes penetrating through the lower-layer medium substrate are arranged on the upper side and the lower side of the periphery of the lower-layer medium substrate.
In the above technical solution, the lower metal unit and the upper metal unit have the same structure and are arranged in a mirror image manner with respect to the lower dielectric substrate.
In the above technical scheme, the short metal sections are distributed at intervals on the upper and lower sides of the periphery of the lower dielectric substrate, and the metalized through holes are located on the periphery of the lower dielectric substrate and used for connecting the short metal sections on the upper and lower sides of the periphery of the substrate.
In the above technical scheme, the lower dielectric substrate and the upper dielectric substrate are both rectangular dielectric substrates made of polytetrafluoroethylene, and the thickness of the upper dielectric substrate is greater than that of the lower dielectric substrate.
In the above technical scheme, the small metal units include rectangular metal plates, lead wire metal sections and a plurality of short metal sections, and the four rectangular metal plates which rotate clockwise by 90 degrees along the center of the lower dielectric substrate are respectively connected with the short metal sections through the lead wire metal sections.
In the technical scheme, the rectangular metal plate is a metal thin patch; the lead metal sections of the rectangular metal plates are positioned at one corner of the rectangular metal plates, and the lead metal sections are led out from the middle parts of the sides of the small metal units, bent and connected with the short metal sections.
Among the above-mentioned technical scheme, the metallization through-hole encircles at lower floor's dielectric substrate border, and interval distribution is used for connecting the short metal section of laying in dielectric substrate upper and lower side border, and the metallization through-hole on the both sides of corner passes through upside right angle metal section and connects.
In the above technical solution, the lumped element loaded metal units of the cross-diagonal bending composite structure are centrosymmetric structures, and include four small metal units with the same structure, and the small metal units loaded by adjacent lumped elements are sequentially arranged by clockwise rotating by 90 degrees around the center of the upper dielectric substrate.
In the above technical solution, the small metal unit loaded by the lumped element includes a right-angled bent metal line laid at one corner of the upper side of the upper dielectric substrate, a nine-fold bent line connected to the right-angled bent metal line at 45 ° and a lumped resistor loaded on the middle-fold section of the nine-fold bent line.
Among the above-mentioned technical scheme, nine book bending lines include short bending segments, well bending segments and long bending segments, and well bending segments and short bending segments are connected in the long bending segments outside from inside to outside symmetry, and the afterbody extension segment of short bending segments is hook-like.
In the single-layer plane loss structure of the upper layer, the cascade medium and the single-layer partial reflecting surface of the lower layer, which are formed by the invention, the upper-layer plane loss structure and the lower-layer partial reflecting surface are cascaded by an air layer with a certain thickness and characteristic impedance of 120 pi, the single-layer plane loss structure of the upper layer comprises an impedance surface formed by laying a metal unit loaded by a lumped element on the upper side of a medium substrate, and the impedance surface considers a cross-diagonal bending composite structure design, so that the wave absorbing bandwidth of a cross structure is reserved, and the miniaturization degree of a diagonal bending method can be achieved. The composite loss structure is characterized in that the center of the cross structure is arranged at four corners of the unit, metal strips which are arranged at an angle of 45 degrees and are connected with the center of the cross are introduced into four quadrants divided by the cross structure, and diagonal bending treatment is carried out in an aligned mode to form a cross-diagonal bending composite structure; the partial reflecting surface of lower floor lays the band-pass type FSS that the metal unit formed respectively by dielectric substrate upper and lower side, and the upside metal unit comprises rectangle metal paster, cross gap and lead wire metal section, and the downside metal unit is laid by the upside structure along vertical direction mirror image, connects the short metal section that distributes on the upper and lower side of dielectric substrate with the metallization through-hole, and the metallization through-hole encircles unit border interval distribution, and the metal section encircles unit border and corresponds the crisscross distribution from top to bottom of metallization through-hole interval.
The invention designs a 'transmission-absorption' type FSR structure with a narrow transition band based on the working principle and the design principle of a two-dimensional FSR structure. The central frequency of the reflection band is pulled to the central frequency of the wave-transmitting band by adopting a gap type structure, the reflection band is covered by using a wide energy consumption band of a double lumped resistance loading structure, the wave-transmitting characteristic of the L-band part and the wave-absorbing characteristic of the S-band part are realized, and the transmission-absorption transition bandwidth is only 0.61 GHz.
The invention provides a 'transmission-absorption' type FSR (frequency selective surface) for miniaturization design, and is based on a miniaturized 2.5D (technology for printing metalized through holes on a supporting dielectric plate of a two-dimensional planar structure) structure of a substrate integrated waveguide. The parallel plate capacitor, the metalized through holes and the bending close arrangement method are adopted to carry out miniaturization treatment on part of the reflecting surface and the loss structure to the same extent, and the absorption and transmission integrated characteristics of partial wave transmission of the L wave band and wave absorption of the S, C, X wave band are realized.
The passband resonance point of the absorption-transmission integrated frequency selective surface unit is 1.82GHz, and the insertion loss is 1.08dB at the working frequency point of 1.82 GHz; the wave absorbing rate is not lower than 80% in the interference frequency band of 3.06-12.28 GHz; the cell size is miniaturized to 0.036 lambda, which is the wave-transparent center frequency.
Due to the adoption of the technical scheme, the invention has the following beneficial effects:
according to the characteristic that the lumped resistance loading type loss structure has a wider energy consumption band, the central frequency point of the reflection band of a partial reflection surface is pulled to a low-frequency wave-transmitting band, the central frequency point of the energy consumption band of the loss structure and the central frequency point of the reflection band are distributed in a staggered mode, so that the transition band is reduced to the low frequency, the wave-absorbing band is expanded to the high frequency, and the wave-transmitting and absorbing transition band at 1.82GHz is realized, and the working characteristic that the 'transmission-absorption' transition band is 1.24GHz is realized. The problem of near interference of a working band caused by the fact that a single-side absorption mode FSR (frequency selective surface) transmission-absorption transition band is wide in the prior art is solved, so that the method has the advantage of a narrow transition band and is beneficial to reducing the near interference of the working band.
2, the invention adopts parallel plate capacitance and metallized through hole loading to carry out miniaturization design on part of reflecting surface, adopts bending type close packing method to carry out miniaturization design on loss structure, leads the miniaturization degree of the wave-transmitting band to be consistent with that of the wave-absorbing band, and realizes the miniaturization of unit size to 0.036 lambda, wherein lambda is wave-transmitting central frequency. The single-side absorption type FSR unit solves the problems that the single-side absorption type FSR unit in the prior art is low in miniaturization degree and far inferior to the miniaturization degree of the traditional FSS, has the advantage of small unit size, and is beneficial to reducing the manufacturing cost and improving the structural angle stability.
3, the invention further improves the partial reflecting surface structure by adopting a metallized through hole method, further reduces the working frequency point of the band-pass FSS, further improves the loss structure by adopting a cross-diagonal bending composite structure, further reduces the wave-absorbing resonance point of the loss structure, eliminates the capacitance effect generated by four sides of the unit, further eliminates the wave-absorbing zero point, overcomes the problem that the single-side wave-absorbing FSR wave-absorbing band is narrower in the prior art, ensures that the invention has the characteristic of 120 percent wide absorption band, and is beneficial to enhancing the wave-absorbing characteristic of the single-side wave-absorbing FSR.
The invention can be used for microwave wave bands, realizes the reduction of RCS of the antenna in two stations under the condition of meeting the radiation performance of the antenna, improves the omnibearing stealth capability and battlefield viability of a radar system, and is suitable for the antenna stealth of various aircraft carrier platforms.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this application, illustrate embodiment(s) of the invention and together with the description serve to explain the principles of the invention:
FIG. 1 is a three-dimensional view of the overall structure of the present invention;
FIG. 2 is a three-dimensional view of the understructure of the present invention;
FIGS. 3(a) and (b) are a top view and a partial schematic view of a metal unit structure laid on an underlying dielectric substrate;
FIG. 4 is a schematic view of the present invention showing the connection of metallized vias around the periphery of an underlying dielectric substrate;
FIGS. 5(a) and (b) are a schematic view and a partial schematic view of the structure of the lower partially reflecting surface of the present invention;
FIGS. 6(a) and (b) are a top view and a partial schematic view of a lossy structure disposed on an upper dielectric substrate;
FIGS. 7(a), (b) are schematic diagrams of the upper loss structure and the partial structure, respectively, of the present invention;
FIG. 8 is a wave absorption/transmission characteristic curve diagram of the integral structure unit of the absorption-transmission integral frequency selective surface in the simulation experiment of the present invention;
FIGS. 9(a) and (b) are graphs showing the influence of incident wave angle on the characteristics of the integral structural unit of the absorption integral frequency selective surface in the simulation experiment of the present invention;
FIG. 10 is a graph of the effect of "through-suction" type FSR radome position on antenna performance in a simulation experiment of the present invention;
FIG. 11 is a single-station scattering characteristic diagram of a composite structure of a "transmission-absorption" type FSR radome-antenna in a simulation experiment of the invention;
fig. 12(a) and (b) are two-station scattering characteristic diagrams of a "transmission-absorption" type FSR radome-antenna composite structure in a simulation experiment of the present invention, respectively.
In the figure, 1, an upper side metal unit; 2. a lower dielectric substrate; 3. a lower metal unit; 4. a short metal section; 5. metallizing the through-hole; 6. lumped element loaded metal elements; 7. an upper dielectric substrate; 8. a cascade medium;
11. a first small metal unit; 12. a second small metal unit; 13. a third small metal unit; 14. a fourth small metal unit;
111. a rectangular metal plate; 112. a lead metal segment; 413. an upper right-angle metal section.
61. 62, 63, 64, first, second, third, fourth lumped element loaded small metal units.
612. Nine folding lines; 613. bending the metal wire at a right angle; 614. a lumped resistance; 615. a short bending section; 616. a middle bending section; 617. a long bending section; 618. a tail extension section.
Detailed Description
The present invention will now be described in detail with reference to the drawings and specific embodiments, wherein the exemplary embodiments and descriptions of the present invention are provided to explain the present invention without limiting the invention thereto.
A miniaturized, absorption-through integral frequency selective surface of the present invention is further described with reference to fig. 1.
The absorption and transmission integrated frequency selective surface comprises an upper dielectric substrate 7, a lower dielectric substrate 2 and a cascade medium 8 filled between the upper dielectric substrate 7 and the lower dielectric substrate 2; a metal unit 6 loaded with lumped elements is laid on the upper side of the upper-layer dielectric substrate 7; the upper band-pass type FSS metal unit 1 and the lower band-pass type FSS metal unit 3 are laid on the upper side and the lower side of the lower layer dielectric substrate 2, and short metal sections 4 and metalized through holes 5 penetrating through the lower layer dielectric substrate 2 are arranged on the upper side and the lower side of the periphery of the lower layer dielectric substrate 2.
Wherein, downside metal unit 3 is unanimous with the structure of upside metal unit 1, and downside metal unit 3 is upside metal unit 1 along vertical direction mirror image. The short metal sections 4 are distributed at intervals and laid on the upper side and the lower side of the periphery of the lower-layer dielectric substrate 2, and the metalized through holes 5 are positioned on the periphery of the lower-layer dielectric substrate 2 and used for connecting the short metal sections 4 on the upper side and the lower side of the periphery of the substrate.
In one embodiment, the lower dielectric substrate 2 is a rectangular parallelepiped dielectric substrate with a relative dielectric constant ∈ r of 2.65 and made of polytetrafluoroethylene, the dielectric substrate unit size is 6mm × 6mm, the degree of miniaturization reaches 0.036 λ, λ is the wave-transparent center frequency, and the dielectric substrate thickness is 0.2 mm.
The upper dielectric substrate 7 is a rectangular dielectric substrate with a relative dielectric constant ∈ r of 2.65 and made of polytetrafluoroethylene, and the dielectric substrate unit size is 6mm × 6mm, the miniaturization degree reaches 0.036 λ, λ is the wave-transparent center frequency, and the dielectric substrate thickness is 0.8 mm.
The cascade medium 8 between the upper layer and the lower layer is an air layer with characteristic impedance of 120 pi, and the thickness of the air layer is 8 mm.
The underlying partially reflective surface structure of the miniaturized, absorption-through integral frequency selective surface of the present invention is further described with reference to fig. 2.
The lower-layer partial reflecting surface comprises a lower-layer medium substrate 2, an upper-side metal unit 1 laid on the upper side of the lower-layer medium substrate 2, a lower-side metal unit 3 laid on the lower side, short metal sections 4 arranged on the upper side and the lower side of the periphery of the medium substrate 2, and metalized through holes 5 penetrating through the medium substrate on the periphery of the medium substrate 2; wherein the upper side metal units 1 and the lower side metal units 3 which are respectively paved on the upper side and the lower side of the lower layer dielectric substrate 2 have the same structure and are all strip-through FSS metal units; the lower side metal units 3 are arranged in a mirror image in the vertical direction for the upper side metal units 1.
With reference to fig. 3(a) and (b), the structure of the metal unit laid on the upper side of the lower dielectric substrate 2 in the lower partial reflection surface of the miniaturized absorption-transmission integral frequency selective surface of the present invention will be further described.
The structure of the metal unit 1 laid on the upper side of the lower dielectric substrate 2 is further described with reference to fig. 3(a), the metal unit 1 laid on the upper side of the lower dielectric substrate 2 in the lower partial reflection surface is a central symmetric structure and is composed of four small metal units 11, 12, 13, 14 with the same structure, where the small metal unit is composed of 1 rectangular metal plate, 1 lead metal segment, and 5 short metal segments, the second small metal unit 12 is formed by duplicating the first small metal unit 11 by rotating 90 ° clockwise along the center of the lower dielectric substrate 2, the third small metal unit 13 is formed by duplicating the first small metal unit 11 by rotating 180 ° clockwise along the center of the lower dielectric substrate 2, and the fourth small metal unit 14 is formed by duplicating the first small metal unit 11 by rotating 270 ° clockwise along the center of the lower dielectric substrate 2.
The structure of the first small metal unit 11 laid in the upper metal unit 1 of the lower dielectric substrate 2 will be further described with reference to fig. 3 (b). The first small metal unit 11 is composed of a rectangular metal plate 111, a lead metal segment 112, and 5 short metal segments 113, 114, 115, 116, 117, which are all thin patches of metal material. The metal plate 111 is a rectangular patch, and the lead metal section 112 is composed of a short metal lead and a long metal lead perpendicular to the short metal lead, wherein one end of the short metal lead is connected with one corner of the metal plate 111, the other end of the short metal lead is connected with one end of the long metal lead, and the other end of the long metal lead is connected with one end of the first short metal section 113; the first short metal segment 113 is composed of two vertical metal segments and is laid at one corner of the upper side of the lower dielectric substrate 2, and the second, third, fourth and fifth short metal segments 114, 115, 116 and 117 are composed of metal segments with the same length and are laid at one side of the upper side of the dielectric substrate 2 at a certain distance.
The connection of the metallized through holes 5 spaced around the boundary of the lower dielectric substrate 2 in the lower partially reflective surface of the miniaturized frequency selective surface of the absorption-transmission integration of the present invention will be further described with reference to fig. 4.
The metalized through holes 5 surround the boundary of the lower-layer dielectric substrate 2, are distributed at intervals and are used for connecting short metal sections laid on the upper and lower side boundaries of the dielectric substrate 2. In one embodiment, the one-side metalized via group is composed of 10 ten-section metalized vias (51, 52, 53, 54, 55, 56, 57, 58, 59, 510) with the same structure, and the metalized vias are distributed at intervals inside the boundary of the lower-layer dielectric substrate 2 and are used for connecting short metal sections laid on the upper-side boundary and the lower-side boundary of the dielectric substrate 2.
Each section of metalized through hole (51, 52, 53, 54, 55, 56, 57, 58, 59, 510) is respectively connected with the adjacent upper side short metal section (113, 114, 115, 116, 117) and the lower side metal section (313, 314, 315, 316, 317), and the metalized through holes on the two sides of the corner are connected through the upper side right-angle metal section 413.
The connection mode of the three sides of the metallized through hole surrounding the boundary of the lower dielectric substrate 2 is the same as the connection mode
The structure and dimensions of the lower partial reflecting surface of the miniaturized absorption-transmission integral frequency selective surface of the present invention will be further described with reference to fig. 5(a), (b).
As shown in FIG. 5(a), the lower dielectric substrate 2 has a side length p1A rectangular metal plate 111 having a side length a of 6mm laid on the upper side of the lower dielectric substrate 2112.225 mm. Referring to fig. 5(b), the dimensions of the short metal segment of the metal lead laid on the upper side of the lower dielectric substrate 2 and the metalized via hole surrounding the boundary of the lower dielectric substrate 2 will be described in further detail, and the width d of the metal lead 11211Length a of 0.2mm short metal segment120.6mm, width d120.2mm, the radius r of the metallized through hole 510.1mm ═And a semi-cylinder.
The lumped element loaded metal element 6 laid on the upper side of the upper layer in the upper layer planar loss structure of the miniaturized absorption-transmission integral frequency selective surface of the present invention will be further described with reference to fig. 6(a), (b).
The overall structure of the metal unit 6 loaded by the lumped element laid on the upper dielectric substrate 7 is further described with reference to fig. 6(a), the metal unit 6 loaded by the lumped element laid on the upper dielectric substrate 7 is a centrosymmetric structure, and includes four first, second, third, and fourth small metal units 61, 62, 63, and 64 loaded by the same structure, and the small metal units loaded by the adjacent lumped elements are sequentially arranged around the center of the upper dielectric substrate 7 by rotating clockwise by 90 °.
The structure of the small metal unit 61 loaded by the first lumped element among the metal units 6 loaded by the lumped element laid on the upper dielectric substrate 7 will be described in further detail with reference to fig. 6 (b).
The small metal unit 61 loaded by the first lumped element includes a right-angled meander line 613 laid at one corner of the upper side of the upper dielectric substrate 7, a nine-fold meander line 612 connected to the right-angled meander line 613 by 45 °, and a lumped resistor 614 loaded on the middle meander section 616 of the nine-fold meander line.
The lumped resistor 614 is loaded at the center of the middle bending segment 616 at 125ohm, and the right-angled bending metal line 613 is composed of two metal segments with the same length and perpendicular to each other.
The structure and dimensions of the upper loss structure of the miniaturized absorption-through-bulk frequency selective surface of the present invention will be further described with reference to fig. 7(a), (b).
As shown in FIG. 7(a), the upper dielectric substrate 7 has a side length p26mm, the width d of the metal line segment in the metal line bent at right angle210.075mm, the clearance s of two sections of right-angle bent metal wires210.525mm, the widths of the long metal segment and the short metal segment in the nine-fold bending line which is placed at 45 degrees are d220.15mm, gap s between long and short metal sections220.15mm, the length of the short metal section is s22+2×d22＝0.45mm。
The dimensions of the small metal elements 61 in the metal elements 6 loaded with the lumped elements laid on the upper dielectric substrate 7 will be described in further detail with reference to fig. 7 (b). The long metal segment length l of the short bend segment 615 in the nine-fold bend line 612 disposed at 45200.65mm, first long metal segment length l of short bend 61521Length l of the second long metal segment of 1.75mm222.35mm, long bent segment 617 first long metal segment length l232.75mm, length l of the second long metal segment242.75mm, the first long metal segment length l of the middle bending segment 61625Length l of second long metal segment 2.35mm261.75mm, first long metal segment length l of short bend 615271.15mm, second long metal segment length l of short bend 615280.55mm, short metal length l of tail extension 61829＝0.125mm。
The technical effects of the invention are further explained by combining simulation experiments as follows:
the wave absorbing/wave transmitting characteristic curve of a single unit of the whole structure obtained by modeling the method by using commercial simulation software is shown in figure 8. In fig. 8, the abscissa represents frequency value in GHz, the left axis of the ordinate represents transmission coefficient in dB, and the right axis of the ordinate represents wave-absorbing rate. In fig. 8, a solid line is a transmission coefficient curve of the absorption-permeation integral frequency selective surface unit in the TE mode, a dotted line is a transmission coefficient curve of the absorption-permeation integral frequency selective surface unit in the TM mode, a solid line is a wave-absorbing rate of the absorption-permeation integral frequency selective surface unit in the TE mode, and a dotted line is a wave-absorbing rate of the absorption-permeation integral frequency selective surface unit in the TM mode. The insertion loss of the absorption and permeation integrated frequency selection surface unit is 1.08dB at the working frequency point of 1.82 GHz; the wave absorbing rate is not lower than 80% in the interference frequency band of 3.06-12.28 GHz.
The curves of the influence of the incident wave angle on the characteristics of the integral structural unit of the absorption integral frequency selective surface obtained by modeling the invention by using commercial simulation software are shown in fig. 9(a) and (b). Fig. 9(a) is a wave-transparent characteristic curve of the integral frequency selective surface structure unit for absorption and transmission at different incident wave angles, and fig. 9(b) is a wave-absorbing characteristic curve of the integral frequency selective surface structure unit for absorption and transmission at different incident wave angles. The abscissa in fig. 9(a) is a frequency value in GHz, the ordinate is a transmission coefficient in dB, the solid line in fig. 9(a) is a transmission coefficient curve of the structural unit in the TE mode at 0 ° of an incident wave, the long dashed line is a transmission coefficient curve of the structural unit in the TM mode at 0 ° of the incident wave, the dash-dot line is a transmission coefficient curve of the structural unit in the TE mode at 15 ° of the incident wave, the dashed line is a transmission coefficient curve of the structural unit in the TM mode at 15 ° of the incident wave, the dotted line is a transmission coefficient curve of the structural unit in the TE mode at 30 ° of the incident wave, the short dashed line is a transmission coefficient curve of the structural unit in the TM mode at 30 ° of the incident wave, and the short dashed line is a transmission coefficient curve of the structural unit in the TM mode at 45 ° of the incident wave. The abscissa in fig. 9(b) is a frequency value, the unit is GHz, the ordinate is a wave-absorbing rate, the solid line in fig. 9(b) is a wave-absorbing rate curve of the structural unit in the TE mode at 0 ° of incident wave, the long dashed line is a wave-absorbing rate curve of the structural unit in the TM mode at 0 ° of incident wave, the dash-dot line is a wave-absorbing rate curve of the structural unit in the TE mode at 15 ° of incident wave, the dashed line is a wave-absorbing rate curve of the structural unit in the TM mode at 15 ° of incident wave, the dotted line is a wave-absorbing rate curve of the structural unit in the TE mode at 30 ° of incident wave, the short dashed line is a wave-absorbing rate curve of the structural unit in the TM mode at 30 ° of incident wave, and the short dotted line is a wave-absorbing rate curve of the structural unit in the TM mode at 45 ° of incident wave. As can be seen from fig. 9, in the TE mode, both the transmission band and the wave-absorbing band of the integral frequency selective surface structure unit can stably work under the irradiation of incident waves of 0 ° to 30 °; in the TM mode, the transmission band and the wave-absorbing band can stably work under the irradiation of incident waves of 0-45 degrees.
A micro-strip antenna working at 1.82GHz is designed by using commercial simulation software, the micro-strip antenna is a dielectric substrate on which a rectangular metal plate is attached, and the antenna adopts epsilonrThe feeding mode adopts coaxial line back feeding, the radius of the inner core of the feeder line is 0.65mm, and the distance between the feeder line and the bottom edge of the metal plate is 2.217.43mm, the rectangular metal plate is 71mm long and 53.25mm wide, and the dielectric substrate is a square of 120mm x 120 mm. 20 multiplied by 20 absorption integral frequency selection surface units form an FSR planar array, the size of the array surface is 120mm multiplied by 120mm, and the FSR planar array is placed on the upper side of the microstrip antenna and is separated from the lower microstrip antenna by an air layer H. The influence of the position of the 'through-suction' type FSR radome obtained by modeling the antenna system by using commercial simulation software on the antenna performance is shown in figure 10, wherein the upward clockwise included angle between the antenna system and the vertical direction in figure 10 is a radiation angle, a unit deg, a radius and a unit dBi. In fig. 10, the solid line is an H-plane directional pattern at an azimuth angle of 0 ° when the FSR radome is spaced from the antenna by 1/16 λ, where λ is a wavelength at an antenna operating frequency of 1.82GHz, the dotted line is an H-plane directional pattern at an azimuth angle of 0 ° when the FSR radome is spaced from the antenna by 1/8 λ, the dash-dot line is an H-plane directional pattern at an azimuth angle of 0 ° when the FSR radome is spaced from the antenna by 1/4 λ, and the dashed-two dotted line is an H-plane directional pattern at an azimuth angle of 0 ° when the FSR radome is spaced from the antenna by 1/2 λ. Fig. 10 shows that when the distances between the FSR radome and the antenna are increased among 1/16 λ, 1/8 λ, 1/4 λ and 1/2 λ, the gains of the antenna in the maximum radiation direction are increased, which are respectively 6.5dBi, 7.5dBi, 8.1dBi and 8.7dBi, and the back lobe is raised compared with the case without the radome.
The microstrip antenna scattering characteristics of the FSR radome loaded with the FSR radome under the normal incidence of the plane wave when the distance H between the FSR radome and the antenna is 1/4 λ is obtained by modeling the present invention with commercial simulation software, as shown in fig. 11 and fig. 12(a) and (b). In fig. 11, the horizontal axis is a frequency value, the unit is GHz, the vertical axis is RCS, the unit is dBsm, the solid line in fig. 11 is a microstrip antenna single-station RCS curve in the TE mode when the FSR radome is not loaded, the dash-dot line is a microstrip antenna single-station RCS curve in the TM mode when the FSR radome is not loaded, the dotted line is a microstrip antenna single-station RCS curve in the TE mode when the FSR radome is loaded, and the dashed-dot line is a microstrip antenna single-station RCS curve in the TM mode when the FSR radome is loaded. Fig. 12(a) is a scattering directional diagram at 4.5GHz, where the horizontal axis is a pitch angle, the unit is deg, the vertical axis is RCS, the unit is dBsm, the solid line in fig. 12(a) is a microstrip antenna single-station RCS curve in TE mode without loading an FSR radome, the dotted line is a microstrip antenna single-station RCS curve in TM mode without loading an FSR radome, the dotted line is a microstrip antenna single-station RCS curve in TE mode with loading an FSR radome, and the dash-dotted line is a microstrip antenna single-station RCS curve in TM mode with loading an FSR radome. Fig. 12(b) is a scattering directional diagram at 10.5GHz, where the horizontal axis is a pitch angle, the unit is deg, the vertical axis is RCS, and the unit is dBsm, in fig. 12(b), the solid line is a microstrip antenna single-station RCS curve in the TE mode without loading the FSR radome, the dotted line is a microstrip antenna single-station RCS curve in the TM mode without loading the FSR radome, the dotted line is a microstrip antenna single-station RCS curve in the TE mode with loading the FSR radome, and the dash-dotted line is a microstrip antenna single-station RCS curve in the TM mode with loading the FSR radome. As can be seen from fig. 12(a), (b), in both modes, the FSR radome has a dual station RCS reduction effect on the microstrip antenna within ± 120 ° of the pitch angle.
The present invention is not limited to the above-mentioned embodiments, and based on the technical solutions disclosed in the present invention, those skilled in the art can make some substitutions and modifications to some technical features without creative efforts according to the disclosed technical contents, and these substitutions and modifications are all within the protection scope of the present invention.
Claims (10)
1. A miniaturized absorption and penetration integrated frequency selective surface is characterized by comprising an upper dielectric substrate (7), a lower dielectric substrate (2) and a cascade medium (8) filled between the upper dielectric substrate (7) and the lower dielectric substrate (2);
the upper side of the upper-layer dielectric substrate (7) is provided with a lumped element loaded metal unit (6), and the lumped element loaded metal unit (6) is of a cross-diagonal bending composite structure;
an upper metal unit (1) and a lower metal unit (3) are arranged on the upper side and the lower side of a lower dielectric substrate (2), and the upper metal unit (1) and the lower metal unit (3) are small metal units respectively corresponding to a cross-diagonal bending composite structure;
short metal sections (4) and metalized through holes (5) penetrating through the lower-layer dielectric substrate (2) are arranged on the upper side and the lower side of the periphery of the lower-layer dielectric substrate (2).
2. The miniaturized suction-through integral frequency selective surface according to claim 1, characterized in that the lower side metal unit (3) is structurally identical to the upper side metal unit (1), arranged in mirror image with respect to the lower dielectric substrate (2).
3. The miniaturized suction-penetration integrated frequency selective surface according to claim 1, wherein the short metal sections (4) are distributed at intervals on the upper and lower sides of the periphery of the lower dielectric substrate (2), and the metalized through holes (5) are formed on the periphery of the lower dielectric substrate (2) and used for connecting the short metal sections (4) on the upper and lower sides of the periphery of the substrate.
4. The miniaturized absorption-transmission integrated frequency selective surface according to claim 1, wherein the lower dielectric substrate (2) and the upper dielectric substrate (7) are both rectangular dielectric substrates made of polytetrafluoroethylene, and the thickness of the upper dielectric substrate (7) is larger than that of the lower dielectric substrate (2).
5. The miniaturized suction-penetration integrated frequency selective surface according to claim 1, wherein the small metal unit comprises a rectangular metal plate, a lead metal section and a plurality of short metal sections, and four rectangular metal plates which are rotated by 90 degrees clockwise along the center of the lower dielectric substrate (2) are respectively connected with the short metal sections through the lead metal sections.
6. The miniaturized suction-through integral frequency selective surface of claim 5, wherein the rectangular metal plate is a thin patch of metal; the lead metal sections of the rectangular metal plates are positioned at one corner of the rectangular metal plates, and the lead metal sections are led out from the middle parts of the sides of the small metal units, bent and connected with the short metal sections.
7. The miniaturized suction-penetration integrated frequency selective surface according to claim 5, wherein the metalized through holes (5) are arranged around the boundary of the lower dielectric substrate (2) at intervals for connecting short metal sections laid on the upper and lower side boundaries of the dielectric substrate (2), and the metalized through holes on the two sides at the corners are connected through the upper right-angle metal section.
8. The miniaturized absorption-transmission integrated frequency selective surface according to claim 1, characterized in that the lumped element loaded metal units (6) of the cross-diagonal bend composite structure are centrosymmetric structures and comprise four small metal units of the same structure, and the small metal units loaded by adjacent lumped elements are sequentially arranged around the center of the upper dielectric substrate (7) by rotating 90 degrees clockwise.
9. The miniaturized frequency selective surface of a transparent body of absorption of claim 8, wherein the small metal units loaded by the lumped elements comprise a right-angled bent metal line laid at one corner of the upper side of the upper dielectric substrate (7), a nine-fold bent line connected to the right-angled bent metal line at 45 ° and lumped resistors loaded on the middle-fold section of the nine-fold bent line.
10. The miniaturized suction-penetration integrated frequency selective surface according to claim 9, wherein the nine-fold bending line comprises a short bending section, a middle bending section and a long bending section, the middle bending section and the short bending section are symmetrically connected to the outer side of the long bending section from inside to outside, and the tail extension section of the short bending section is hook-shaped.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114843725A (en) * | 2022-05-16 | 2022-08-02 | 江苏电子信息职业学院 | Ultra-wideband large-angle band-stop type frequency selection surface |
| CN115173056A (en) * | 2022-05-20 | 2022-10-11 | 电子科技大学 | Low RCS broadband antenna housing based on antenna reciprocity principle |
| CN115360526A (en) * | 2022-09-19 | 2022-11-18 | 西安电子科技大学 | Frequency selection super surface structure with double wave-transmitting frequency bands and three wave-absorbing frequency bands |
Citations (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2004093244A2 (en) * | 2003-04-11 | 2004-10-28 | The Penn State Research Foundation | Pixelized frequency selective surfaces for reconfigurable artificial magnetically conducting ground planes |
| CN103036038A (en) * | 2011-07-26 | 2013-04-10 | 深圳光启高等理工研究院 | Fallback type radar antenna |
| CN106058483A (en) * | 2016-07-08 | 2016-10-26 | 西安电子科技大学 | Broadband wave absorbing material with stable polarization |
| CN106207480A (en) * | 2016-08-31 | 2016-12-07 | 中国人民解放军国防科学技术大学 | Complete polarization single-pass band bilateral inhales ripple bands complex Meta Materials and antenna house |
| CN108270085A (en) * | 2018-03-05 | 2018-07-10 | 南京航空航天大学 | Inhale integrated frequency-selective surfaces structure thoroughly |
| CN208093763U (en) * | 2018-03-05 | 2018-11-13 | 南京航空航天大学 | Inhale integrated frequency-selective surfaces structure thoroughly |
| CN110504549A (en) * | 2019-07-26 | 2019-11-26 | 西安电子科技大学 | Suction based on graphene integrated frequency-selective surfaces thoroughly |
| CN110911844A (en) * | 2019-11-28 | 2020-03-24 | 电子科技大学 | Inhale and penetrate integrative material with broadband wave-transparent window |
| CN111048907A (en) * | 2020-01-12 | 2020-04-21 | 中国人民解放军国防科技大学 | Wave-absorbing and wave-transmitting integrated frequency selection surface with ultra-wide transparent wave band |
| CN111769368A (en) * | 2020-07-26 | 2020-10-13 | 中国人民解放军国防科技大学 | Wave-absorbing and wave-transmitting integrated frequency selection surface based on gap type resonator |
| CN112332109A (en) * | 2020-10-22 | 2021-02-05 | 西安电子科技大学 | Broadband wave-transmitting type frequency selective wave absorber based on 2.5D structure |
| CN112821081A (en) * | 2021-01-26 | 2021-05-18 | 上海大学 | Absorption and transmission integrated frequency selective surface with high-frequency broadband wave absorption and low-frequency wave transmission |
| KR102272327B1 (en) * | 2020-06-15 | 2021-07-02 | 엘아이지넥스원 주식회사 | Meta material absorber for integrated mast and its manufacturing method |
| CN113410650A (en) * | 2021-06-21 | 2021-09-17 | 山西大学 | Low-profile absorption/transmission integrated anti-interference device with ultra-wide absorption band |
| CN113451781A (en) * | 2021-05-28 | 2021-09-28 | 西安电子科技大学 | Microminiaturized 2.5-dimensional absorption and penetration integrated frequency selection wave absorber |
| CN113488778A (en) * | 2021-06-22 | 2021-10-08 | 湖南电磁场科技有限公司 | Transmission wave-absorbing structure with adjustable pass band state |
-
2022
- 2022-01-11 CN CN202210028565.5A patent/CN114361806B/en active Active
Patent Citations (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2004093244A2 (en) * | 2003-04-11 | 2004-10-28 | The Penn State Research Foundation | Pixelized frequency selective surfaces for reconfigurable artificial magnetically conducting ground planes |
| CN103036038A (en) * | 2011-07-26 | 2013-04-10 | 深圳光启高等理工研究院 | Fallback type radar antenna |
| CN106058483A (en) * | 2016-07-08 | 2016-10-26 | 西安电子科技大学 | Broadband wave absorbing material with stable polarization |
| CN106207480A (en) * | 2016-08-31 | 2016-12-07 | 中国人民解放军国防科学技术大学 | Complete polarization single-pass band bilateral inhales ripple bands complex Meta Materials and antenna house |
| CN108270085A (en) * | 2018-03-05 | 2018-07-10 | 南京航空航天大学 | Inhale integrated frequency-selective surfaces structure thoroughly |
| CN208093763U (en) * | 2018-03-05 | 2018-11-13 | 南京航空航天大学 | Inhale integrated frequency-selective surfaces structure thoroughly |
| CN110504549A (en) * | 2019-07-26 | 2019-11-26 | 西安电子科技大学 | Suction based on graphene integrated frequency-selective surfaces thoroughly |
| CN110911844A (en) * | 2019-11-28 | 2020-03-24 | 电子科技大学 | Inhale and penetrate integrative material with broadband wave-transparent window |
| CN111048907A (en) * | 2020-01-12 | 2020-04-21 | 中国人民解放军国防科技大学 | Wave-absorbing and wave-transmitting integrated frequency selection surface with ultra-wide transparent wave band |
| KR102272327B1 (en) * | 2020-06-15 | 2021-07-02 | 엘아이지넥스원 주식회사 | Meta material absorber for integrated mast and its manufacturing method |
| CN111769368A (en) * | 2020-07-26 | 2020-10-13 | 中国人民解放军国防科技大学 | Wave-absorbing and wave-transmitting integrated frequency selection surface based on gap type resonator |
| CN112332109A (en) * | 2020-10-22 | 2021-02-05 | 西安电子科技大学 | Broadband wave-transmitting type frequency selective wave absorber based on 2.5D structure |
| CN112821081A (en) * | 2021-01-26 | 2021-05-18 | 上海大学 | Absorption and transmission integrated frequency selective surface with high-frequency broadband wave absorption and low-frequency wave transmission |
| CN113451781A (en) * | 2021-05-28 | 2021-09-28 | 西安电子科技大学 | Microminiaturized 2.5-dimensional absorption and penetration integrated frequency selection wave absorber |
| CN113410650A (en) * | 2021-06-21 | 2021-09-17 | 山西大学 | Low-profile absorption/transmission integrated anti-interference device with ultra-wide absorption band |
| CN113488778A (en) * | 2021-06-22 | 2021-10-08 | 湖南电磁场科技有限公司 | Transmission wave-absorbing structure with adjustable pass band state |
Non-Patent Citations (3)
| Title |
|---|
| JIANFENG WEI: "A Wideband Transmission Frequency Selective Surface Rasorber" * |
| ZHEN YANG;: "Design of a Broadband Frequency Selective", 《IEEE ACCESS》 * |
| 王连胜: "基于超材料的宽带吸波/透波一体罩设计", 《海南大学学报自然科学版》 * |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114843725A (en) * | 2022-05-16 | 2022-08-02 | 江苏电子信息职业学院 | Ultra-wideband large-angle band-stop type frequency selection surface |
| CN114843725B (en) * | 2022-05-16 | 2023-11-03 | 江苏电子信息职业学院 | Ultra-wideband wide-angle band-stop type frequency selective surface |
| CN115173056A (en) * | 2022-05-20 | 2022-10-11 | 电子科技大学 | Low RCS broadband antenna housing based on antenna reciprocity principle |
| CN115173056B (en) * | 2022-05-20 | 2023-08-08 | 电子科技大学 | Low RCS broadband radome based on antenna reciprocity principle |
| CN115360526A (en) * | 2022-09-19 | 2022-11-18 | 西安电子科技大学 | Frequency selection super surface structure with double wave-transmitting frequency bands and three wave-absorbing frequency bands |
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