CN112332109A - Broadband wave-transmitting type frequency selective wave absorber based on 2.5D structure - Google Patents

Broadband wave-transmitting type frequency selective wave absorber based on 2.5D structure Download PDF

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CN112332109A
CN112332109A CN202011138022.6A CN202011138022A CN112332109A CN 112332109 A CN112332109 A CN 112332109A CN 202011138022 A CN202011138022 A CN 202011138022A CN 112332109 A CN112332109 A CN 112332109A
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equal
layer
wave
metal patch
metal
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CN112332109B (en
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姜文
杨泽芊
刘鹏
葛江诚
洪涛
孙红兵
李小秋
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Xidian University
CETC 14 Research Institute
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CETC 14 Research Institute
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01QANTENNAS, i.e. RADIO AERIALS
    • H01Q17/00Devices for absorbing waves radiated from an antenna; Combinations of such devices with active antenna elements or systems
    • H01Q17/008Devices for absorbing waves radiated from an antenna; Combinations of such devices with active antenna elements or systems with a particular shape
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01QANTENNAS, i.e. RADIO AERIALS
    • H01Q15/00Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
    • H01Q15/0006Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
    • H01Q15/0013Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01QANTENNAS, i.e. RADIO AERIALS
    • H01Q15/00Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
    • H01Q15/0006Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
    • H01Q15/0086Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices having materials with a synthesized negative refractive index, e.g. metamaterials or left-handed materials

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Abstract

The invention relates to a broadband wave-transmitting type frequency selective wave absorber based on a 2.5D structure, which solves the problem of narrow wave-transmitting band width of the existing frequency selective wave absorber. The frequency selective wave absorber is composed of a loss layer, a lossless layer and an air layer, wherein resonators which are arranged periodically are printed on the loss layer, and each resonator subunit is positioned by rotating 90 degrees, 180 degrees and 270 degrees along the center of a dielectric plate by taking 0 degree as a reference direction; each subunit is provided with short and long single-side fillets, double-side fillets and rectangular metal patches with equal width; and 2.5D bent metal strips formed by the same double-side fillet metal patches distributed on the upper layer and the lower layer of the dielectric plate alternately along a right-angle bending path are printed between the long and short single-side fillet metal patches. The invention forms a right-angle bent metal strip structure by utilizing a 2.5D structure, widens the wave-transmitting bandwidth of the frequency selective wave absorber, realizes the characteristics of wide wave-transmitting band, bilateral wave-absorbing, insensitive polarization, stable angle and small unit size, and is suitable for a broadband antenna system with stealth requirement.

Description

Broadband wave-transmitting type frequency selective wave absorber based on 2.5D structure
Technical Field
The invention belongs to the technical field of artificial metamaterials, and relates to a frequency selective wave absorber, in particular to a 2.5D structure-based broadband transmission-type frequency selective wave absorber which can be used for various broadband antenna systems with low scattering requirements, such as radar antennas, communication antennas and the like.
Background
Low scattering properties are one of the important evaluation criteria in modern weaponry design. The frequency selection surface antenna housing with the band-pass characteristic has the wave-transmitting characteristic in the working frequency band of the antenna, so that the radiation characteristic of an antenna system is not influenced. And in the non-working frequency band of the antenna, the antenna housing can reflect waves to other non-threatening directions, so that the single station radar scattering cross section (RCS) of the antenna system is effectively reduced, and the stealth performance of the antenna system is improved. Therefore, the frequency selective surface antenna cover with the band-pass characteristic is widely applied to the design of various low-scattering weaponry. With the continuous development of multi-station radar and detection technology, it is difficult to achieve good stealth effect by only reducing the single-station RCS of the antenna system.
As a novel periodic artificial electromagnetic structure, a Frequency Selective absorber (FSR) can be regarded as a combination of a Frequency Selective surface with band-pass characteristics and a wave-absorbing structure. The structure has wave-transparent characteristic in the working frequency band of the antenna system, thereby not influencing the radiation characteristic of the antenna system. Outside the working frequency band of the antenna system, the structure can absorb external electromagnetic waves and convert the external electromagnetic waves into heat energy for dissipation, so that the single-station RCS and the double-station RCS of the antenna system are reduced simultaneously. According to the absorption and transmission characteristics, frequency selective wave absorbers can be divided into the following three categories: 1. the absorption-transmission type is that the low-frequency part has wave-absorbing characteristic and the high-frequency part has wave-transmitting characteristic; 2. the transmission-absorption type is that the low-frequency part has wave transmission characteristic and the high-frequency part has wave absorption characteristic; 3. the absorption-transmission-absorption type is that the middle frequency band has wave-transmitting characteristic and the high and low frequency positions have wave-absorbing characteristic. Considering that a modern radar antenna system is often a broadband system, the suction-transmission-suction type frequency selective wave absorber with the wide wave-transmitting characteristic better meets the requirement of practical application and has wider application prospect. However, the design of the wave absorber for the absorption-transmission-absorption type frequency selection with wide wave-transmitting band characteristics at home and abroad mainly depends on the 3D structure implementation. The 3D structure has the defects of high processing difficulty, high processing cost, large finished product volume, sensitivity to incoming wave polarization mode and the like. The 2D frequency selective absorber structure is often narrow in the transmission band, and is difficult to meet the application requirements of a broadband antenna system.
In order to realize the wide wave-transmitting characteristic, researchers mainly increase the equivalent impedance of the resonance structure through the cascade connection of a plurality of resonance structures, so as to widen the wave-transmitting frequency band. For example, in 2020, Wangling et al published a paper named "F response Selective resonator With a Wide a With High Transmission and Based on Multiple phosphor particle resonace" on page 19-340 of the journal of IEEE Antennas and Wireless Transmission Letters, and disclosed a frequency Selective absorber having a broad wave-transmitting characteristic Based on a cascade of Multiple interdigital resonators. The structure utilizes the cascade connection of a plurality of interdigital resonators to realize high impedance characteristics in a broadband range, thereby realizing broadband wave transmission. Finally, the structure can realize wave transmission within 8.1-11GHz, and the relative bandwidth is 30.3%. In addition, the structure also has bilateral wave-absorbing property and polarization insensitivity. But there is still a large gap between the 30.3% relative bandwidth and the operating bandwidth of the broadband antenna system. In addition, the cascade connection of a plurality of resonators causes the structural unit to have the problems of large size, poor angle stability, difficult application in limited space and the like.
With the wide application of a broadband antenna system and the urgent need for reducing the single-station and double-station RCS of the broadband antenna system, the existing frequency selective wave absorber has a narrow wave-transmitting bandwidth and a large unit size, and the frequency selective wave absorber with the characteristics of bilateral wave absorption, high angle stability and polarization insensitivity and wide wave-transmitting band (S21 is less than-1 dB) is objectively needed to be used for the broadband radar antenna system with the stealth requirement, but the frequency selective wave absorber meeting the stealth requirement of the broadband antenna system is not realized at present.
Disclosure of Invention
The invention aims to overcome the defects and the objective requirements of the prior art and provides a broadband wave-transmitting type frequency selective absorber based on a 2.5D structure, which has wide wave transmission and small unit size.
The invention relates to a 2.5D structure-based broadband transmission-type frequency selective wave absorber, which comprises a loss layer, a lossless layer and an air layer between the loss layer and the lossless layer, wherein the loss layer and the lossless layer are both based on a square dielectric plate, metal patches which are regularly distributed are printed on the dielectric plate, a resonator formed by the metal patches is regularly printed on the loss layer, and the loss layer, the lossless layer and the air layer between the loss layer and the lossless layer form the frequency selective wave absorber together, and the frequency selective wave absorber is characterized in that: m multiplied by N (M is more than or equal to 5, N is more than or equal to 5) resonators arranged periodically are printed on the loss layer; each resonator is formed by sequentially rotating 90 degrees, 180 degrees and 270 degrees in a counterclockwise or clockwise direction by taking the center of a square dielectric slab as a rotation center and taking 0 degree as a reference subunit; each subunit comprises a short unilateral fillet metal patch, a long unilateral fillet metal patch, a double-sided fillet metal patch and a basic patch of a rectangular metal patch which are equal in width, the center of the rectangular edge of the short unilateral fillet metal patch is positioned at 0 degree of the benchmark, the central symmetrical line of the short unilateral fillet metal patch and the long unilateral fillet metal patch is superposed with the central symmetrical line of the square dielectric slab, a 2.5D bending type metal strip structure is formed by alternately distributing a plurality of double-sided fillet metal patches with the same size on the upper layer and the lower layer of the dielectric slab and along a right-angle bending path in a space area where the fillets of the long unilateral fillet metal patch and the short unilateral fillet metal patch are opposite, the center of the rectangular metal patch is positioned on the central symmetrical line of the long unilateral fillet metal patch and the short unilateral fillet metal patch, the length direction of the rectangular metal patch is vertical to the central symmetrical line of the long unilateral fillet metal patch and the short unilateral fillet metal patch, the edge of the long unilateral fillet metal patch is, the metal strips printed on the upper surface of the dielectric plate are referred to as a first metal strip group, and the metal strips printed on the lower surface of the dielectric plate are referred to as a second metal strip group.
The invention solves the problem of stealth of a broadband antenna system, and aims to widen the wave transmission bandwidth and the size of a miniaturized unit of a frequency selective absorber while ensuring bilateral wave absorption, polarization insensitivity and high angle stability. In addition, the 2.5D structure can keep the advantages of easy processing and integration of the 2D structure.
Compared with the prior art, the invention has the following advantages:
effectively broadens-1 dB wave-transparent bandwidth of the frequency selective wave absorber: the invention introduces the metallized through hole to form a 2.5D structure, effectively improves the equivalent impedance at the resonance point of the structure, thereby widening the wave-transparent bandwidth of the structure, and the simulation result shows that the invention effectively widens the-1 dB wave-transparent bandwidth of the frequency selective wave absorber;
miniaturized structure has improved the broadband and has inhaled integrative angle stability and integratable degree through: the invention introduces the metallized through hole to form a 2.5D structure, thereby effectively reducing the unit size and improving the integratability of the invention. In addition, the smaller unit size also reduces the reflection phase difference generated between the passive resonance units when electromagnetic waves are obliquely incident, avoids the angle sensitivity characteristic brought by the large unit size of the conventional cascade wide-band frequency selective wave absorber, and effectively improves the angle stability of the broadband absorption and transmission integration.
Drawings
FIG. 1 is a schematic view of the overall structure of the present invention;
FIG. 2(a) is a schematic plan view of a resonator of the lossy layer of the present invention;
FIG. 2(b) is a schematic perspective view of a resonator of the lossy layer of the present invention, also shown in FIG. 2(a) on the side of the axis;
FIG. 3 is a schematic diagram of a sub-unit of the lossy layer resonator of the present invention;
FIG. 4 is a schematic diagram of a first metal strip cluster structure of a lossy layer resonator of the invention;
FIG. 5 is a schematic diagram of all upper metal patches of a sub-unit of a lossy layer resonator of the present invention;
FIG. 6 is a schematic diagram of the structure of a second group of metal strips of a lossy layer resonator of the invention;
FIG. 7 is a schematic view of all underlying metal patches of a sub-unit of a lossy layer resonator of the present invention;
FIG. 8 is a schematic diagram of a resonant cell of the lossless layer of the present invention;
FIG. 9 is a schematic diagram of the overall structure of a resonant unit of the frequency selective absorber of the present invention;
FIG. 10(a) is a graph of the transmission coefficient of the present invention at different angles of incidence of TE polarization;
FIG. 10(b) is a graph of the transmission coefficient of the present invention at different angles of incidence of TM polarization;
FIG. 11(a) is a wave absorption rate curve under different incident angles of TE polarization according to the present invention;
FIG. 11(b) is a wave absorption rate curve diagram of the present invention under different incident angles of TM polarization.
The invention is described in detail below with reference to the following figures and specific examples:
Detailed Description
Example 1
The low scattering characteristic is the essential characteristic of advanced weaponry at present, and with the wide application of radar detection technology and multistation radar, the stealthy needs of weaponry can not be satisfied to conventional stealthy antenna house single-station RCS that only can reduce. The conventional wave absorber has no selectivity in the frequency domain, and the working requirement of the antenna system for normally receiving and transmitting electromagnetic waves is seriously influenced, so that the frequency selective wave absorber with the frequency selective characteristic becomes a research hotspot in the stealth field at present. However, in the prior art, the high wave-transmitting bandwidth of the frequency selective wave absorber is often narrow, which is contrary to the development trend of broadband work of an airborne radar antenna system, so that the frequency selective wave absorber with the wide wave-transmitting characteristic has objective application requirements.
The present invention provides a broadband transmission-mode frequency selective absorber based on a 2.5D structure, which is developed and designed in view of the above-mentioned current situation.
The invention relates to a broadband transmission-type frequency selective wave absorber based on a 2.5D structure, which comprises a loss layer, a lossless layer and an air layer between the loss layer and the lossless layer, wherein the loss layer and the lossless layer are both based on a square dielectric plate, metal patches which are regularly arranged are printed on the dielectric plate, resonators which are formed by the metal patches are regularly printed on the loss layer, and the loss layer, the lossless layer and the air layer between the loss layer and the lossless layer form the frequency selective wave absorber, and the frequency selective wave absorber is shown in figure 1. Each resonator is formed by sequentially rotating 90 degrees, 180 degrees and 270 degrees in a counterclockwise or clockwise direction by taking the center of a square dielectric slab as a rotation center and taking 0 degree as a reference subunit; there are four subelements in a resonator. Each subunit comprises a short unilateral fillet metal patch, a long unilateral fillet metal patch, a double-sided fillet metal patch and a basic patch of a rectangular metal patch which are equal in width, referring to figure 3, the center of the rectangular edge of the short unilateral fillet metal patch is positioned at 0 DEG of a benchmark, the central symmetry line of the short unilateral fillet metal patch and the long unilateral fillet metal patch is superposed with the central symmetry line of a square dielectric plate, a 2.5D bending type metal strip structure is printed in a space area where the fillets of the long unilateral fillet metal patch and the short unilateral fillet metal patch are opposite, wherein the space area is formed by alternately distributing a plurality of double-sided fillet metal patches with the same size on the upper layer and the lower layer of the dielectric plate and forming a 2.5D bending type metal strip structure along a right-angle bending path, and the 2.5D bending type metal strip structure refers to the condition that the same double-sided fillet metal patch is printed between every two adjacent double-sided fillet metal patches, and the metal patches with the round corners on the upper layer and the lower layer of the dielectric plate are connected through the metallized through holes. The center of the rectangular metal patch in each subunit is positioned on the central symmetry line of the long and short single-side fillet metal patches, the length direction of the rectangular metal patch is perpendicular to the central symmetry line of the long and short single-side fillet metal patches, the right-angle sides of the long single-side fillet metal patch are connected with the rectangular metal patch through resistors, all the metal patches printed on the upper surface of the dielectric plate are called as a first metal strip group, and the structural schematic diagram of the first metal strip group of the loss layer resonator in fig. 4 is referred to. Fig. 5 is a schematic diagram of all metal patches on the upper surface of one subunit. All the metal patches printed on the lower surface of the dielectric board are referred to as a second metal strip group, which is shown in fig. 6 as a schematic structural diagram of the second metal strip group of the lossy-layer resonator. Fig. 7 is a schematic view of all metal patches on the lower surface of a subunit.
The nondestructive layer comprises square dielectric plate, square metal paster and the square metal paster that the sculpture has the square ring, and the upper and lower surface printing of square dielectric plate has the square metal paster that the size equals, and the intermediate level printing of square dielectric plate has the square metal paster that the sculpture has the square ring gap. An air layer is arranged between the loss layer and the lossless layer, and the loss layer, the lossless layer and the air layer in the middle of the lossless layer form a frequency selective wave absorber.
Aiming at the stealth requirement of a broadband antenna system widely applied in the current airborne phased array radar system and the practical engineering limitation of smaller space of a loading area, in order to realize simultaneous reduction of single-station RCS and double-station RCS on the premise of keeping the radiation performance of the antenna system, the invention innovatively designs a 2.5D broadband transmission-type frequency selective absorber. By utilizing the arrangement scheme of alternately arranging the metal patches on the upper layer and the lower layer of the dielectric plate, the dead length of the metal patches is reduced, and the equivalent capacitance of a loss layer is reduced; when the metal patches of the upper layer and the lower layer are connected by utilizing the metallized through holes of the 2.5D structure, additional equivalent inductance is introduced, and the equivalent inductance of the loss layer is increased. Finally, the quality factor of the loss layer structure is improved, extremely high equivalent impedance is achieved at a resonance point, the high wave-transmitting bandwidth of the frequency selective wave absorber is widened, and the actual working requirement of a broadband antenna system is met. Further considering the engineering limitation of smaller installation space in practical application, the invention further improves the equivalent electrical length of the loss layer in a smaller unit size by utilizing the bent metal strip structure, and solves the problem of miniaturization of the unit structure. Simulation results show that the invention has good periodicity in a limited space range, greatly widens the high transmission band bandwidth of the frequency selective wave absorber, and solves the problem that the transmission band bandwidth of the existing frequency selective wave absorber cannot meet the working requirement of a broadband antenna system.
Example 2
The overall structure of the broadband wave-transparent frequency selective absorber based on the 2.5D structure is the same as that of embodiment 1, the side length of a dielectric plate of the loss layer is a, a is not less than 5mm and not more than 10mm, the size of the dielectric plate is related to the wave-transparent working frequency of the resonator, the working frequency of the resonator (namely the wave-transparent central frequency of the dielectric plate) is related to a 2.5D bent metal strip structure formed by bending the metal patches with the round corners at the two sides along a right-angle path, and when the length and the width of the dielectric plate are changed, the 2.5D bent metal strip structure formed by bending the metal patches with the round corners at the two sides along the right angle can also be.
The thickness of the loss layer dielectric plate is hd1, and hd1 is more than or equal to 0.25mm and less than or equal to 2 mm. The dielectric constant is j, j is more than or equal to 1.5 and less than or equal to 4.5. In this example, a is 5mm, hd1 is 0.25mm, and j is 1.5.
Example 3
The overall structure of the broadband wave-transparent frequency selective absorber based on the 2.5D structure is the same as that of embodiment 1, the side length of a dielectric plate of the loss layer is a, a is not less than 5mm and not more than 10mm, the size of the dielectric plate is related to the wave-transparent working frequency of the resonator, the working frequency of the resonator (namely the wave-transparent central frequency of the dielectric plate) is related to a 2.5D bent metal strip structure formed by bending the metal patches with the round corners at the two sides along a right-angle path, and when the length and the width of the dielectric plate are changed, the 2.5D bent metal strip structure formed by bending the metal patches with the round corners at the two sides along the right angle can also be. In this example, the side length a is 10mm, the thickness hd1 is 2mm, and j is 4.5.
Example 4
The overall structure of the broadband wave-transparent frequency selective absorber based on the 2.5D structure is the same as that of embodiment 1, the side length of a dielectric plate of the loss layer is a, a is not less than 5mm and not more than 10mm, the size of the dielectric plate is related to the wave-transparent working frequency of the resonator, the working frequency of the resonator (namely the wave-transparent central frequency of the dielectric plate) is related to a 2.5D bent metal strip structure formed by bending the metal patches with the round corners at the two sides along a right-angle path, and when the length and the width of the dielectric plate are changed, the 2.5D bent metal strip structure formed by bending the metal patches with the round corners at the two sides along the right angle can also be. In this example, the side length a is 7.5mm, the thickness hd1 is 1mm, and j is 3.
Example 5
The overall structure of the broadband wave-transmitting type frequency selective absorber based on the 2.5D structure is the same as that of the embodiment 1-4, the widths w of the basic patches in the first metal strip group and the second metal strip group are equal, w is more than or equal to 0.2mm and less than or equal to 0.5mm, and the size specifications of all the metal patches with double-side round corners are the same. In this example, the width w is 0.2 mm.
Example 6
The overall structure of the broadband wave-transmitting frequency selective absorber based on the 2.5D structure was the same as in examples 1 to 4, and all the metal patches with rounded double edges had the same dimensions, and in this example, the width w was 0.5 mm.
Example 7
The overall structure of the broadband wave-transmitting frequency selective absorber based on the 2.5D structure was the same as in examples 1 to 4, and all the metal patches with rounded double edges had the same dimensions, and in this example, the width w was 0.35 mm.
Example 8
The overall structure of the broadband wave-transmitting type frequency selective absorber based on the 2.5D structure is the same as that of the embodiment 1-7, the length of the short single-side rounded metal patch is L1, and L1 is more than or equal to 0.4mm and less than or equal to 1 mm. The length of the metal patch with the round corners at the two sides is L2, and L2 is more than or equal to 0.4mm and less than or equal to 1 mm. The length of the long single-side rounded metal patch is L3, and L3 is more than or equal to 0.6mm and less than or equal to 1.5 mm. The length of the rectangular metal patch is L4, and L4 is more than or equal to 3mm and less than or equal to 6 mm. The distance between the long single-side rounded-corner metal patch and the rectangular metal patch is L5, and L5 is more than or equal to 0.6mm and less than or equal to 1 mm. In this example, L1-0.4 mm, L2-0.4 mm, L3-0.6 mm, L4-3 mm and L5-0.6 mm.
Example 9
The overall structure of the wave absorber was selected based on the frequency of the broadband transmission mode of the 2.5D structure as in examples 1 to 7, where L1 is 1mm, L2 is 1mm, L3 is 1.5mm, L4 is 6mm, and L5 is 1 mm.
Example 10
The overall structure of the wave absorber was selected based on the frequency of the broadband transmission mode of the 2.5D structure in the same manner as in examples 1 to 7, where L1 was 0.7mm, L2 was 0.7mm, L3 was 1m, L4 was 4.5mm, and L5 was 0.8 mm.
Example 11
The overall structure of the broadband wave-transmitting type frequency selective absorber based on the 2.5D structure is the same as that of the embodiment 1-10, and the radius of the metalized through holes in all the basic patches and the loss layer dielectric plate is Rvia which is not less than 0.05mm and not more than 0.2 mm. In this example, Rvia is 0.05 mm.
Example 12
The overall structure of the broadband transmission mode frequency selective absorber based on the 2.5D structure was the same as in examples 1 to 10, where Rvia was 0.2 mm.
Example 13
The overall structure of the broadband transmission mode frequency selective absorber based on the 2.5D structure was the same as in examples 1 to 10, where Rvia was 0.125 mm.
Example 14
The overall structure of the broadband wave-transmitting type frequency selective absorber based on the 2.5D structure is the same as that of the embodiment 1-13, the resistance of the welding resistor between the long single-side rounded corner metal patch and the rectangular metal patch is R, and R is more than or equal to 100 omega and less than or equal to 500 omega. In this example, R is 100 Ω.
Example 15
The overall structure of a 2.5D structure based broadband transmission-mode frequency selective absorber is the same as in examples 1 to 13, where R is 500 Ω
Example 16
The overall structure of a 2.5D structure based broadband transmission-mode frequency selective absorber is the same as in examples 1 to 13, where R is 300 Ω
A more detailed example is given below to further illustrate the invention
Example 17
The overall structure of the frequency selective absorber based on the broadband transmission mode of the 2.5D structure is the same as in examples 1-16.
Referring to fig. 1, fig. 1 is a schematic diagram of an overall structure of the present invention, and a broadband transmission mode frequency selective absorber based on a 2.5D structure, in fig. 1, the absorber includes M × N unit structures arranged periodically, each unit structure is a square, and M ═ N ═ 30. The lossless layer also comprises a square dielectric plate, a square metal patch and a square ring-etched square patch, an air layer is arranged between the lossy layer and the lossless layer, and the lossy layer, the lossless layer and the air layer in the lossless layer form a frequency selective wave absorber.
Referring to fig. 2, 8 and 9, fig. 2 is a schematic diagram of a resonator structure of a loss layer of the present invention, fig. 8 is a schematic diagram of a structure of a lossless layer of the present invention, fig. 9 is a schematic diagram of an overall structure of a resonant unit of a frequency selective absorber, and fig. 2(a) is a schematic diagram of a 2.5D structure-based broadband transmission-type frequency selective absorber loss layer including a square dielectric plate 1, resonators 2 printed on the dielectric plate 1, and metallized through holes 3. Referring to fig. 8, the lossless layer of the present invention includes a square dielectric plate 4, first metal patches 5 with the same size and structure printed on the upper surface and the lower surface of the dielectric plate 4, and second metal patches 6 printed on the middle layer of the dielectric plate 4 and etched with square annular gaps. Referring to fig. 9, an air layer exists between the lossy layer and the lossless layer, where:
referring to fig. 2(a), the lossy dielectric plate 1 has a side length a of 5mm, a thickness hd1 of 0.508mm, and a relative dielectric constant of 3.5.
Referring to fig. 2(b), the resonator 2 is composed of 4 sub-units 21. Referring to fig. 3, fig. 3 is a schematic structural diagram of a sub-unit of the lossy-layer resonator of the present invention, where each sub-unit 21 is composed of 1 short single-side rounded metal patch 211, 13 double-side rounded metal patches 212, 1 long single-side rounded metal patch 213, and 1 rectangular metal patch 214, and widths w of all the metal patches are equal to each other, where w is 0.3 mm. The 4 sub-units 21 are formed by sequentially rotating the single sub-unit 21 by 90 °, 180 °, and 270 ° around the center of the dielectric sheet 1 with 0 ° as a reference direction. The central symmetry line of the short single-side rounded metal patch 211 and the long single-side rounded metal patch 213 coincides with the central symmetry line of the dielectric layer. The middle point of the right-angle side of the short single-side round-corner metal patch 211 is positioned at the center of the dielectric plate 1, and the length L1 is 0.4 mm. The center of the rectangular metal patch 214 is located on the central symmetry line of the dielectric slab 1, the length direction of the rectangular metal patch 214 is perpendicular to the central symmetry line of the short single-side rounded metal patch 211 and the long single-side rounded metal patch 213, the length L4 of the rectangular metal patch 214 is 4mm, and the distance between the rectangular metal patch 214 and the long single-side rounded metal patch 213 is L5-0.6 mm; the long single-side fillet metal patch 213 and the short single-side fillet metal patch are printed with 13 double-side fillet metal patches 212 with the same size alternately distributed on the upper layer and the lower layer of the dielectric plate and form a 2.5D bent metal strip structure along a bending path, the 2.5D bent metal strip structure means that the same double-side fillet metal patch 212 is printed on the back surface of the dielectric plate between the metalized through holes 3 between every two adjacent double-side fillet metal patches 212, the double-side fillet metal patches 212 are connected with the double-side fillet metal patches 212 on the upper layer and the lower layer of the dielectric plate through the metalized through holes 3, the length L2 of the double-side fillet metal patch 212 is 0.55mm, and the aperture Rvia of the metalized through hole 3 is 0.125 mm; the length L3 of the long single-sided rounded metal patch 213 is 0.7 mm.
The distance between the rectangular metal patch 214 and the long single-side rounded metal patch 213 is 0.6mm which is L5 mm, the model of the loading resistor is 0201, and the resistance value is 240 Ω.
The dielectric sheet 5 without a dielectric layer had a side length a of 8mm, a thickness hd2 of 2mm, and a relative dielectric constant of 3.5.
The first metal patches 5 printed on the upper and lower surfaces of the dielectric lossless plate 5 are square metal patches, and the side length p is 5.2 mm. The center of the first metal patch 5 coincides with the center of the dielectric plate 4, and each side length of the first metal patch 5 is parallel to the side length of the corresponding dielectric plate 4.
The second metal patch 6 printed on the middle layer of the dielectric plate 5 without damage is a square metal patch etching square ring type slot, and the side length of the second metal patch 6 is 8 mm. The center of the square ring-shaped slot is superposed with the center of the medium plate 4, each edge of the square ring-shaped slot is parallel to the edge length of the corresponding medium plate 4, the slot width sc is 0.15mm, and the slot distance d from the boundary is 1.45 mm.
The thickness of the air layer between the loss layer and the lossless layer is air which is 5.0 mm.
The invention discloses a frequency selective wave absorber with wide wave-transmitting characteristic based on a 2.5D structure, aiming at widening the wave-transmitting bandwidth of the frequency selective wave absorber to meet the stealth requirement of a broadband antenna system. The frequency selective wave absorber unit comprises a loss layer, a lossless layer and an air layer in the middle of the lossless layer. The lossy layer comprises a square dielectric slab, resonators printed on the dielectric slab, and metallized through holes. One resonator unit is formed by positioning the sub-units by rotating 90 degrees, 180 degrees and 270 degrees in the reference direction of 0 degree, the metal patches on the upper layer and the lower layer of the dielectric plate are bent along a right angle and connected by utilizing a metalized through hole, and a 2.5D bent metal strip structure is formed. The nondestructive layer comprises a square dielectric plate, square first metal patches printed on the upper layer and the lower layer of the dielectric plate and having the same size, and square second metal patches printed on the middle layer of the dielectric plate and etched with square annular gaps. The broadband antenna system has the characteristics of wide transmission band, bilateral wave absorption, insensitive polarization, stable angle and small unit size, and is suitable for a broadband antenna system with stealth requirements.
The technical effects of the invention are further explained by combining simulation experiments as follows:
example 18
The overall structure of the frequency selective absorber based on the broadband transmission mode of the 2.5D structure was the same as that of example 17.
Simulation conditions and contents:
the transmission coefficients of the TE and TM polarizations of example 18 at different angles of incidence were simulated using commercial simulation software ANSYS Electronics 19.0, and the results are shown in FIGS. 10(a) and 10 (b).
And (3) simulation result analysis:
FIG. 10(a) is a graph of the transmission coefficient of the present invention at different angles of incidence of TE polarization; FIG. 10(b) is a graph of the transmission coefficient of the present invention at different angles of incidence of TM polarization. In fig. 10(a), the abscissa indicates frequency, the ordinate indicates transmission coefficient, the curve with a square mark in the graph indicates a transmission coefficient curve of the present invention at 0 ° incidence of TE polarization, the curve with a circular mark indicates a transmission coefficient curve of the present invention at 15 ° incidence of TE polarization, and the curve with a triangular mark indicates a transmission coefficient curve of the present invention at 30 ° incidence of TE polarization. The abscissa in fig. 10(b) is frequency, the ordinate is transmission coefficient, the curve with square marks in the figure is the transmission coefficient curve of the present invention at TM polarized 0 ° incidence, the curve with circular marks is the transmission coefficient curve of the present invention at TM polarized 15 ° incidence, and the curve with triangular marks is the transmission coefficient curve of the present invention at TM polarized 30 ° incidence.
As can be seen from fig. 10(a) and 10(b), when the TE polarization is incident at 0 °, the frequency band range of the transmission coefficient of the structure is 7.80-11.75GHz, and the relative bandwidth is 40.41%; when TE polarization is incident at 0 degree, the frequency band range of the structure, with the transmission coefficient less than-1 dB, is 7.81-11.75GHz, the relative bandwidth is 40.29%, the wave-transmitting frequency band width is widened, and the problem that the frequency selective wave absorber is narrow in wave-transmitting frequency band width is solved. In addition, the transmission coefficient curves of the 2.5D broadband frequency selective wave absorber structure in 5-15GHz under TE and TM polarization are highly consistent, which reflects that the structure has polarization insensitivity and stable working performance under TE and TM polarization. When the incident angle is changed from 0 degree to 30 degrees, the frequency band with the transmission coefficient smaller than-1 dB is kept unchanged, the angle stability is better, and the stable working performance of the invention under the irradiation of oblique incident electromagnetic waves is reflected.
Example 19
The overall structure of the frequency selective absorber based on the broadband transmission mode of the 2.5D structure was the same as that of example 17.
Simulation conditions and contents:
the wave absorption rate of the TE and TM polarizations of example 19 under different angles of incidence was simulated and calculated by using commercial simulation software ANSYS Electronics 19.0, and the results are shown in fig. 11(a) and 11 (b).
And (3) simulation result analysis:
FIG. 11(a) is a wave absorption rate curve under different incident angles of TE polarization according to the present invention; FIG. 11(b) is a wave absorption rate curve under different incident angles of TM polarization. In fig. 11(a), the abscissa indicates frequency, the ordinate indicates wave-absorbing rate, the curve with a square mark in the graph indicates a wave-absorbing rate curve of the present invention when TE polarization is incident at 0 °, the curve with a circular mark in the graph indicates a wave-absorbing rate curve of the present invention when TE polarization is incident at 15 °, and the curve with a triangular mark indicates a wave-absorbing rate curve of the present invention when TE polarization is incident at 30 °. The abscissa in fig. 11(b) is frequency, the ordinate is the absorption rate, the curve with a square index in the figure is the absorption rate curve of the present invention when TM polarization is 0 ° incident, the curve with a circular index is the absorption rate curve of the present invention when TM polarization is 15 ° incident, and the curve with a triangular index is the absorption rate curve of the present invention when TM polarization is 30 ° incident.
When TE polarization is incident at 0 degree, the frequency band range with the wave absorbing rate of more than 80 percent is 3.67-6.80GHz and 13.71-15.30 GHz; when TM polarization is incident at 0 degree, the frequency band range with the wave absorbing rate of more than 80% is 3.67-6.80GHz and 13.70-15.29GHz, so that the invention has highly consistent wave absorbing frequency bands under TE and TM polarization, and reflects that the invention has similar wave absorbing characteristics under the irradiation of electromagnetic waves with different polarizations. When the incident angle is changed from 0 degree to 30 degrees, the wave-absorbing rate curve of the structure is not obviously deteriorated, and the structure has better angle stability.
The simulation results show that the equivalent impedance of the 2.5D lifting structure is utilized, so that bilateral wave absorption, stable polarization and stable angle can be realized while broadband wave transmission is realized, and the actual application requirements of a broadband antenna system are met.
In short, the invention discloses a 2.5D structure-based broadband wave-transmitting type frequency selective wave absorber, which solves the problems that the existing frequency selective wave absorber is narrow in wave-transmitting bandwidth and difficult to meet the application requirement of a broadband antenna system. The loss layer, the lossless layer and the air layer in the middle of the lossless layer jointly form a frequency selection wave absorbing body, M multiplied by N resonators which are arranged periodically are printed on the loss layer, and each resonator subunit is formed by sequentially rotating 90 degrees, 180 degrees and 270 degrees along the center of a square dielectric plate or along the anticlockwise direction or the clockwise direction by taking 0 degree as the reference direction; the basic paster that contains the unilateral fillet metal paster of short that the width equals, long unilateral fillet metal paster, bilateral fillet metal paster and rectangle metal paster in every subunit, the printing has the metal strip that forms 2.5D and bend along the route of bending by the same bilateral fillet metal paster of alternative distribution upper and lower floor on the dielectric-slab in the space region between long, the unilateral fillet metal paster of short, and the right angle limit and the rectangle metal paster of long unilateral fillet metal paster pass through resistance connection. The invention forms a right-angle bent metal strip structure by utilizing a 2.5D structure, widens the wave-transmitting bandwidth of the frequency selective wave absorber, has the characteristics of wide wave-transmitting band, bilateral wave-absorbing, insensitive polarization, stable angle and small unit size, and is suitable for a broadband antenna system with stealth requirement.
The foregoing description is only exemplary of the invention and is not intended to limit the invention, and it will be apparent to those skilled in the art that various changes and modifications in form and detail may be made without departing from the principles and structures of the invention without departing from the spirit and scope of the invention, but such changes and modifications are within the scope of the appended claims.

Claims (6)

1. The utility model provides a broadband transmission type frequency selection wave absorption body based on 2.5D structure, includes the air bed in the middle of wearing layer, harmless layer and wearing layer and the harmless layer, wearing layer and harmless layer all use the square dielectric plate as the base, and the printing has the metal paster that the rule was arranged on the dielectric plate, and the regular printing on the wearing layer has the syntonizer that the metal paster formed, and wearing layer, harmless layer and the air bed in the middle of constitute frequency selection wave absorption body, its characterized in that jointly: m multiplied by N resonators arranged periodically are printed on the loss layer, M is more than or equal to 5, and N is more than or equal to 5; the sub-units of each resonator are positioned by taking 0 degree as a reference direction and sequentially rotating 90 degrees, 180 degrees and 270 degrees along the anticlockwise direction or the clockwise direction by taking the square dielectric slab center as a rotation center; each subunit comprises a short unilateral fillet metal patch, a long unilateral fillet metal patch, a double-sided fillet metal patch and a rectangular metal patch which are equal in width, the center of a right angle side of the short unilateral fillet metal patch is positioned at 0 DEG of a reference, the central symmetry line of the short unilateral fillet metal patch and the long unilateral fillet metal patch is superposed with the central symmetry line of a square dielectric slab, a plurality of double-sided fillet metal patches with the same size are printed in a space area opposite to the fillets of the long unilateral fillet metal patch and the short unilateral fillet metal patch on the upper layer and the lower layer of the dielectric slab in an alternating manner and form a 2.5D bending type metal strip structure along a right-angle bending path, the center of the rectangular metal patch is positioned on the central symmetry line of the long unilateral fillet metal patch and the short unilateral fillet metal patch, and the length direction of the rectangular metal patch is perpendicular to the central symmetry line of the long unilateral fillet metal patch and, the right-angle sides of the long single-side rounded-corner metal patches are connected with the rectangular metal patches through resistors, all the metal patches printed on the upper surface of the dielectric plate are called as a first metal strip group, and all the metal patches printed on the lower surface of the dielectric plate are called as a second metal strip group.
2. The 2.5D structure-based broadband transmission-mode frequency selective wave absorber is characterized in that the side length of a dielectric plate of a loss layer is a, and a is more than or equal to 5mm and less than or equal to 10 mm; the thickness is hd1, hd1 is more than or equal to 0.25mm and less than or equal to 2 mm; the dielectric constant is j, j is more than or equal to 1.5 and less than or equal to 4.5.
3. The frequency selective wave absorber based on a 2.5D structure and having a broadband transmission mode is characterized in that the widths w of the basic patches in the first metal strip group and the second metal strip group are equal, and are 0.2mm w 0.5 mm.
4. The 2.5D structure-based broadband wave-transmitting type frequency selective absorber of claim 1, wherein the length of the short single-side rounded metal patch is L1, and L1 is 0.4mm or more and 1mm or less; the length of the metal patch with the round corners at the two sides is L2, and L2 is more than or equal to 0.4mm and less than or equal to 1 mm; the length of the long single-side rounded metal patch is L3, and L3 is more than or equal to 0.6mm and less than or equal to 1.5 mm; the length of the rectangular metal patch is L4, and L4 is more than or equal to 3mm and less than or equal to 6 mm; the distance between the long single-side rounded-corner metal patch and the rectangular metal patch is L5, and L5 is more than or equal to 0.6mm and less than or equal to 1 mm.
5. The 2.5D structure-based broadband transmission-mode frequency selective wave absorber is characterized in that the radius of metallized through holes in all basic patches and in a loss layer dielectric plate is Rvia, and the Rvia is more than or equal to 0.05mm and less than or equal to 0.2 mm.
6. The 2.5D structure-based broadband wave-transmitting type frequency selective absorber is characterized in that the resistance of a welding resistor between a long single-side rounded metal patch and a rectangular metal patch is R, and R is greater than or equal to 100 omega and less than or equal to 500 omega.
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