CN114498052B - Low-profile broadband super-surface structure with wave-absorbing and wave-transmitting amplitude regulation and control characteristics - Google Patents
Low-profile broadband super-surface structure with wave-absorbing and wave-transmitting amplitude regulation and control characteristics Download PDFInfo
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- CN114498052B CN114498052B CN202210121819.8A CN202210121819A CN114498052B CN 114498052 B CN114498052 B CN 114498052B CN 202210121819 A CN202210121819 A CN 202210121819A CN 114498052 B CN114498052 B CN 114498052B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
- H01Q15/0006—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
- H01Q15/0086—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices having materials with a synthesized negative refractive index, e.g. metamaterials or left-handed materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
- H01Q15/0006—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
- H01Q15/0013—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective
- H01Q15/0026—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective said selective devices having a stacked geometry or having multiple layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q17/00—Devices for absorbing waves radiated from an antenna; Combinations of such devices with active antenna elements or systems
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Abstract
The invention belongs to the technical field of radar and wireless communication, and particularly relates to a low-profile broadband super-surface structure with wave-absorbing and wave-transmitting amplitude regulation and control characteristics, which is designed based on the in-phase reflection characteristics of an artificial magnetic conductor, and comprises a basic structure unit consisting of a dielectric layer, a metal layer and an air layer, wherein the dielectric layer consists of a first dielectric layer (4) and a second dielectric layer (5) which are distributed from top to bottom; the metal layer comprises a bilateral absorption loss layer (1), an artificial magnetic conductor super-surface layer (2) and a band-pass frequency selection surface layer (3) which are distributed from top to bottom, the bilateral absorption loss layer (1) is located on the upper surface of the first dielectric layer (4), and the artificial magnetic conductor super-surface layer (2) and the band-pass frequency selection surface layer (3) are respectively located on the upper surface and the lower surface of the second dielectric layer (5). The invention achieves the purposes of in-band wave-transmitting and out-band wave-absorbing through a smaller size and a lower profile, and keeps better angle stability in a broadband range.
Description
Technical Field
The invention belongs to the technical field of radar and wireless communication, and particularly relates to a low-profile broadband super-surface structure with wave-absorbing wave-transmitting amplitude regulation and control characteristics, which is designed based on the in-phase reflection characteristics of an artificial magnetic conductor, in particular to a low-profile broadband super-surface with a transmission window and an integrated element for absorbing electromagnetic waves.
Background
With the rapid development of technologies such as electronic reconnaissance and radar detection, the requirements of hiding, strengthening and protecting are very urgent, so that a powerful electromagnetic hiding technology becomes particularly important. The super-surface with band-pass property can improve the stealth effect of a radar system in a mode of reflecting out-of-band incoming waves, however, the super-surface can only play a role in reducing RCS of a single-station radar, along with the development of anti-stealth technology, a base station is bound to deploy more radars, the super-surface is required to absorb electromagnetic waves instead of reflecting the electromagnetic waves, and the super-surface is required to have the function of absorbing the electromagnetic waves when having wave-transmitting capacity.
Various types of absorption and permeation integrated super-surface structures are widely researched at the present stage, but a relatively efficient design method is not mature yet, and the performance of the absorption and permeation integrated super-surface structure needs to be improved. The current research and working points at home and abroad mainly focus on the aspects of expanding absorption bandwidth and reducing structure thickness, and the design method comprises the steps of increasing the number of resonance points in a frequency band by introducing a proper unit structure and realizing the consumption of electromagnetic waves in a resonance frequency band by loading lumped resistance elements; or the number of unit layers is increased, and the resonance points are increased; or a specific capacitance inductance value of each layer is realized through a multilayer complementary structure, so that a filtering effect is achieved. For example, hao H et al published a paper entitled "Absorptive Frequency-Selective Transmission Structure With Square-Loop Hybrid Resonator" in the journal of IEEE Antennas and Wireless Transmission Letters, which uses a double-Square ring and a rectangular branch Structure to increase the number of resonance points in a Frequency band and realizes the consumption of electromagnetic waves in the resonance Frequency band by loading lumped resistance elements on the branches, and although a wider Frequency band is obtained, the section electrical length is greater than 0.25 lambda. For example, hang Ye et al issue a paper named "High-Selectivity Frequency-Selective resonator Based on Low-Profile band filters" in the IEEE antenna and Wireless Performance Letters journal, and the paper increases the number of unit layers to increase the resonance points, but such a multi-layer structure undoubtedly increases the manufacturing complexity and greatly increases the thickness, and does not conform to the development trend of Low-Profile design.
Therefore, contradiction still exists between the bandwidth and the profile of the structure, and how to reduce the profile and expand the bandwidth is needed, so that the super-surface design which is wide in the low-profile broadband and has the wave-absorbing wave-transmitting amplitude regulation and control characteristic is researched, and better angle stability is kept in the broadband range.
Disclosure of Invention
The invention aims to provide a low-profile broadband super-surface designed based on the in-phase reflection characteristic of an artificial magnetic conductor and having wave-absorbing wave-transmitting amplitude regulation and control characteristics and a basic unit thereof, so as to realize the characteristics of in-band wave-transmitting and out-of-band wave-absorbing while realizing a low-profile structure.
In order to realize the purpose, the technical scheme of the invention is as follows: a low-profile broadband super-surface structure with wave-absorbing and wave-transmitting amplitude regulation and control characteristics comprises a basic structural unit consisting of a dielectric layer, a metal layer and an air layer, and is characterized in that the dielectric layer consists of a first dielectric layer (4) and a second dielectric layer (5) which are distributed from top to bottom; the metal layer comprises a bilateral absorption loss layer (1), an artificial magnetic conductor super-surface layer (2) and a band-pass frequency selection surface layer (3) which are distributed from top to bottom, the bilateral absorption loss layer (1) is positioned on the upper surface of a first dielectric layer (4), the artificial magnetic conductor super-surface layer (2) and the band-pass frequency selection surface layer (3) are respectively positioned on the upper surface and the lower surface of a second dielectric layer (5), an air layer (6) is positioned between the first dielectric layer (4) and the second dielectric layer (5), and the basic structural unit is copied and translated to obtain a super-surface body; the artificial magnetic conductor super-surface layer (2), the second dielectric layer (5) and the band-pass frequency selection surface layer (3) have the same-phase reflection and wave-transmission characteristics of the artificial magnetic conductor.
The thickness h of the first dielectric layer (4) 1 In the range of 0.25-0.55mm, the thickness h of the second dielectric layer (5) 2 The dielectric substrate has a relative dielectric constant of epsilon within the range of 0.4-0.8mm r F4BM material of =2.65, the first dielectric layer (4) and the second dielectric layer (5) are separated by an air layer (6) therebetween; the thickness h of the air layer (6) is in the range of 1.5-2.2mm by the formula
The electrical length of the standard profile is calculated.
Bilateral absorption loss layer (1) constitute by lumped resistance, lumped inductance, lumped capacitance and square ring metal patch, every edge of square ring metal patch loads first lumped resistance (7), lumped inductance (8), lumped capacitance (9) and second lumped resistance (10) respectively, wherein two resistances are located both sides respectively, apart from metal patch outward flange d 1 The range is 0.6-0.9mm, and the lumped inductance and the lumped capacitance are connected in parallel in the middle.
The resistance value R of the first lumped resistor (7) 1 And the resistance value R of the second lumped resistor (10) 2 Equal, ranging from 90 to 120 Ω.
Inductance L of the lumped inductor 1 The range is 0.6-0.8nH.
The capacitance value C of the lumped capacitor 1 In the range of 0.35-0.45pF.
The width w of the square ring metal 3 The range is 0.6-0.8mm, and the outer side length of the square ring metal is l 3 The range is 4.4-4.6mm, and the center of the square ring metal patch is aligned with the center of the dielectric substrate.
The artificial magnetic conductor super surface layer (2) is composed of rectangular metal patches, the centers of the metal patches are superposed with the center of the second dielectric layer (5), and the corresponding side length d a The range is 0.5-2mm.
The band-pass frequency selective surface layer (3) is formed by an inner curved square ring gap etched on a metal plate, the shape of the gap is in rotational symmetry with the center of the second medium layer (5), and the length l of the outer edge of the gap 1 In the range of 3.9-4.1mm, the width w of the gap 1 The range is 0.03-0.15mm, the incurve length l 2 In the range of 1.3-1.55mm, width w 2 The range is 0.65-0.8mm.
The super surface is formed by 20 multiplied by 20 basic structure unit replication translation, and the period p of the super surface is 5mm.
Compared with the prior art, the invention has the following advantages: the RCS outside the passband is restrained to achieve the purpose of absorbing waves by using a mode that an electromagnetic wave absorbing surface consisting of lumped resistors, lumped inductors, lumped capacitors, square ring metal patches and a dielectric substrate absorbs electromagnetic waves, and meanwhile wave absorbing bandwidths on two sides of the passband are widened; the section is reduced by applying the in-phase reflection characteristic of the artificial magnetic conductor, and the contradiction between the bandwidth and the section is solved; by loading the band-pass frequency selection surface of the inner curved square ring gap, the period electrical length is shortened, and the angle stability is kept under a broadband frequency band; therefore, the invention achieves the purposes of wave transmission in the band and wave absorption out of the band by smaller size and lower profile.
Drawings
FIG. 1 is a three-dimensional schematic diagram of a basic unit structure of a super-surface in example 1 of the present invention;
FIG. 2 is a structural explanatory diagram of the basic unit structure dimensions of the super-surface in example 1 of the present invention;
FIG. 3 is a top view of the basic unit structure of the super-surface in example 1 of the present invention, i.e. the double-sided absorption loss layer 1 located on the upper surface of the first dielectric layer 4;
fig. 4 is a top view of the second dielectric layer (5) in the basic unit structure of the meta-surface in embodiment 1 of the present invention, that is, the artificial magnetic conductor meta-surface layer (2) located on the upper surface of the second dielectric layer (5);
fig. 5 is a bottom view of the second dielectric layer (5) in the basic unit structure of the super-surface in example 1 of the present invention, i.e., the band-pass frequency selective surface layer (3) located on the lower surface of the second dielectric layer (5);
fig. 6 is a super-surface formed by translational replication of 20 × 20 basic units in example 1 of the present invention, where the basic units are periodically arranged in an array;
fig. 7 is a reflection coefficient phase simulation result of an artificial magnetic conductor structure composed of a rectangular patch, i.e., an artificial magnetic conductor super-surface layer (2), a dielectric substrate, i.e., a second dielectric layer (5), and a complete floor in a super-surface basic unit according to the present invention;
FIG. 8 is a simulation result of S parameter of the basic unit of the super-surface in embodiment 1 of the present invention;
FIG. 9 is a simulation result of wave absorption rate and wave transmission rate of the basic unit of the super-surface in embodiment 1 of the present invention;
fig. 10 is a simulation result of the wave absorption rate and the wave transmission rate of the basic unit of the super-surface in example 1 of the present invention corresponding to the incidence of electromagnetic waves of 0 to 35 °, where a is a TE mode and b is a TM mode;
FIG. 11 is the RCS reduction simulation results of the super-surface in example 1 of the present invention and the comparison with the RCS reduction simulation results of the floor with the same area.
In the figure, 1, a double-sided absorption loss layer; 2. an artificial magnetic conductor super-surface layer; 3. a band-pass frequency selective surface layer; 4. a first dielectric layer; 5. a second dielectric layer; 6. an air layer; 7. a first lumped resistance; 8. a lumped inductance; 9. a lumped capacitor; 10. a second lumped resistance.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. All other embodiments, which can be obtained by a person skilled in the art without any inventive step based on the embodiments of the present invention, are within the scope of the present invention.
The material of the dielectric substrate is not necessarily selected from F4BM, so long as the relative dielectric constant meets the resonance requirement. According to the requirements of required frequency band, bandwidth and the like, the corresponding size parameters of the unit can be adjusted to meet the resonance requirement. According to the requirements of wave transmissivity, wave absorption rate and the like, parameters such as resistance value and the like of the chip resistor can be adjusted, and the resonance requirement can be met.
Example 1
Referring to fig. 1, a low-profile broadband super-surface and a basic unit with wave-absorbing wave-transmitting amplitude regulation and control characteristics designed based on the in-phase reflection characteristics of an artificial magnetic conductor are characterized by comprising a basic unit structure consisting of a dielectric layer, a metal layer and an air layer, wherein the dielectric layer consists of a first dielectric layer (4) and a second dielectric layer (5) which are distributed from top to bottom; the metal layer is composed of a bilateral absorption loss layer (1), an artificial magnetic conductor super-surface layer (2) and a band-pass frequency selection surface layer (3) which are distributed from top to bottom, the bilateral absorption loss layer (1) is located on the upper surface of a first dielectric layer (4), the artificial magnetic conductor super-surface layer (2) and the band-pass frequency selection surface layer (3) are respectively located on the upper surface and the lower surface of a second dielectric layer (5), an air layer (6) is located between the first dielectric layer (4) and the second dielectric layer (5), and the basic structural unit is copied and translated to obtain the super-surface which is low in profile broadband and has the wave-absorbing wave-transmitting amplitude regulation and control characteristic.
Referring to fig. 2, the thickness h of the first dielectric layer (4) of the present embodiment 1 Is 0.5mm, the thickness h of the second dielectric layer (5) 2 0.5mm, and the dielectric substrate is made of a material having a relative dielectric constant of epsilon r F4BM of =2.65, the first medium layer (4) and the second medium layer (5) are separated by an air layer (6) having a thickness h in the range of 1.8 mm. To be provided with
Calculating the electrical length of the profile for the standard, with a central frequency of lambda 0 Measured by the standard of =9.4GHz, the section is only 0.1074 lambda 0 。
Referring to FIG. 3, this embodimentThe double-side absorption loss layer (1) of the embodiment is located on the upper surface of the first dielectric layer (4), the double-side absorption loss layer (1) is composed of lumped resistors, lumped inductors, lumped capacitors and square ring metal patches, each edge of each square ring metal patch is respectively loaded with a first lumped resistor (7), a lumped inductor (8), a lumped capacitor (9) and a second lumped resistor (10), and the resistance value R of the first lumped resistor 1 Resistance value R of the second lumped resistor 2 Inductance L of lumped inductor equal to 100 Ω 1 0.7nH, capacitance C of lumped capacitor 1 0.4pF, square ring metal width w 3 0.6mm, square ring metal outer side length l 3 The range is 4.5mm, the center of the square ring metal patch is aligned with the center of the dielectric substrate, the two resistors are respectively positioned at two sides and are d away from the outer edge of the metal patch 1 And the lumped inductance and the lumped capacitance are connected in parallel in the middle.
Referring to fig. 4 and 5, in the present embodiment, the artificial magnetic conductor super surface layer (2) and the band-pass frequency selective surface layer (3) are respectively located on the upper surface and the lower surface of the second dielectric layer (5), the artificial magnetic conductor super surface layer (2) is composed of rectangular metal patches, the center of the artificial magnetic conductor super surface layer coincides with the center of the second dielectric layer (5), and the corresponding side length d is corresponding to the center of the second dielectric layer (5) a 1mm, the band-pass frequency selective surface layer (3) is formed by an inner curved square ring gap etched on a metal plate, the shape of the gap is rotationally symmetrical with the center of the second medium layer (5), and the length l of the outer edge of the gap 1 Is 4mm, the width w of the gap 1 0.05mm, length of incurve l 2 Is 1.45mm, width w 2 Is 0.75mm. The artificial magnetic conductor super-surface layer (2), the second dielectric layer (5) and the band-pass frequency selection surface layer (3) have the same-phase reflection characteristic of the artificial magnetic conductor and have the wave-transmitting characteristic.
Referring to fig. 6, the super-surface in this embodiment is formed by translational replication of 20 × 20 basic units, each basic unit is arranged periodically in an array, and the period p is 5mm.
The parameters used in this example are shown in table 1.
Table 1 list of parameters in example 1
| p | h | h 1 | h 2 | l 1 | l 2 | l 3 | w 1 |
| 5mm | 1.8mm | 0.5mm | 0.5mm | 4mm | 1.45mm | 4.5mm | 0.05mm |
| w 2 | w 3 | d 1 | d a | R 1 | R 2 | L 1 | C 1 |
| 0.75mm | 0.6mm | 0.6mm | 1mm | 100Ω | 100Ω | 0.7nH | 0.4pF |
Example 2
Referring to fig. 1, a super surface and a basic unit with a low profile, a broadband and wave-absorbing and wave-transmitting amplitude regulation and control characteristics designed based on the in-phase reflection characteristics of an artificial magnetic conductor are characterized by comprising a basic unit structure consisting of a dielectric layer, a metal layer and an air layer, wherein the dielectric layer consists of a first dielectric layer (4) and a second dielectric layer (5) which are distributed from top to bottom; the metal layer is composed of a bilateral absorption loss layer (1), an artificial magnetic conductor super-surface layer (2) and a band-pass frequency selection surface layer (3) which are distributed from top to bottom, the bilateral absorption loss layer (1) is located on the upper surface of a first dielectric layer (4), the artificial magnetic conductor super-surface layer (2) and the band-pass frequency selection surface layer (3) are respectively located on the upper surface and the lower surface of a second dielectric layer (5), an air layer (6) is located between the first dielectric layer (4) and the second dielectric layer (5), and the basic structural unit is copied and translated to obtain the super-surface which is low in profile broadband and has the wave-absorbing wave-transmitting amplitude regulation and control characteristic.
Referring to fig. 2, the thickness h of the first dielectric layer (4) of the present embodiment 1 Is 0.254mm, and the thickness h of the second dielectric layer (5) 2 0.5mm, and the dielectric substrate is made of a material having a relative dielectric constant of epsilon r F4BM of =2.65, the first medium layer (4) and the second medium layer (5) are separated by an air layer (6) having a thickness h in the range of 1.7 mm. To be provided with
Calculating the electrical length of the profile for the standard, with a central frequency of lambda 0 Measured by the standard value of =9.2GHz, the section is only 0.0897 lambda 0 。
Referring to fig. 3, the double-sided absorption loss layer (1) of this embodiment is located on the upper surface of the first dielectric layer (4), the double-sided absorption loss layer (1) is composed of lumped resistors, lumped inductors, lumped capacitors and square-ring metal patches, each edge of the square-ring metal patches is respectively loaded with the first lumped resistor (7), the lumped inductor (8), the lumped capacitor (9) and the second lumped resistor (10), and the resistance R of the first lumped resistor 1 Resistance value R of the second lumped resistor 2 Inductance L of lumped inductor equal to 100 Ω 1 0.7nH, capacitance C of lumped capacitor 1 0.4pF, square ring metal width w 3 0.6mm, square ring metal outer side length l 3 The range is 4.6mm, the center of the square ring metal patch is aligned with the center of the dielectric substrate, the two resistors are respectively positioned at two sides and are d away from the outer edge of the metal patch 1 And the lumped inductance and the lumped capacitance are connected in parallel in the middle of the capacitor, and the thickness of the capacitor is 0.6 mm.
Referring to fig. 4 and 5, in the present embodiment, the artificial magnetic conductor super surface layer (2) and the band-pass frequency selective surface layer (3) are respectively located on the upper surface and the lower surface of the second dielectric layer (5), the artificial magnetic conductor super surface layer (2) is composed of rectangular metal patches, the center of the artificial magnetic conductor super surface layer coincides with the center of the second dielectric layer (5), and the corresponding side length d is corresponding to the center of the second dielectric layer (5) a 1mm, the band-pass frequency selective surface layer (3) is formed by an inner curved square ring gap etched on a metal plate, the shape of the gap is rotationally symmetrical with the center of the second medium layer (5), and the length l of the outer edge of the gap 1 Is 4mm, the width w of the gap 1 0.05mm, length of incurve l 2 Is 1.45mm, and has a width w 2 Is 0.9mm. The artificial magnetic conductor super-surface layer (2), the second dielectric layer (5) and the band-pass frequency selection surface layer (3) have the same-phase reflection characteristic of the artificial magnetic conductor and have the wave-transmitting characteristic.
Referring to fig. 6, the super-surface in this embodiment is formed by translating and copying 20 × 20 basic units, each basic unit is periodically arranged in an array, and the period p is 5mm.
The parameters used in this example are shown in table 2.
Table 2 list of parameters in example 2
| p | h | h 1 | h 2 | l 1 | l 2 | l 3 | w 1 |
| 5mm | 1.7mm | 0.254mm | 0.5mm | 4mm | 1.45mm | 4.6mm | 0.05mm |
| w 2 | w 3 | d 1 | d a | R 1 | R 2 | L 1 | C 1 |
| 0.9mm | 0.6mm | 0.6mm | 1mm | 100Ω | 100Ω | 0.7nH | 0.4pF |
The technical effects of the invention are further explained by combining simulation experiments as follows:
1. simulation software: the commercial simulation software CST2020 and the commercial simulation software HFSS2020.
2. Simulation content and results:
firstly, an artificial magnetic conductor structure consisting of a rectangular patch, namely an artificial magnetic conductor super-surface layer (2), a dielectric substrate, namely a second dielectric layer (5) and a complete floor is simulated under the condition of an infinite periodic array, and a reflection coefficient phase simulation result of the artificial magnetic conductor structure in the range of 5-25GHz is obtained through simulation. As a result, as shown in fig. 7, the in-phase reflection phase range of 6.39 to 13.28GHz is obtained based on [ -90 °,90 ° ] and the profile required for operation decreases as the frequency increases in the high frequency band, although not entirely within [ -90 °,90 ° ], so that a low profile design can be realized in a wide frequency band. And the influence on the reflection phase after the inner curve square ring gap is etched on the band-pass frequency selective surface layer (3) is limited to the phenomenon that the phase is steeply changed in the range of the pass band frequency band corresponding to the gap, and the final integral performance is not influenced. The data and results of this example 1 were obtained by further optimization after integration with the overall unit structure.
The basic unit in the embodiment 1 is simulated under the infinite period array condition, and S parameters of the basic unit in the range of 5-26GHz are obtained through simulation. The result is shown in fig. 8, S21 is greater than-3 dB in the range of 9.09-10.39GHz, in-band transmission is realized, and out-of-band suppression effect is obvious. S11 is kept below-10 dB within the passband at 9.2-9.59GHz and at 6.49-8.11GHz and 11.65-23GHz on both sides of the passband, thereby forming absorption bands on both sides of the passband and reducing RCS.
The basic unit in this embodiment 1 is simulated under the infinite period array condition, and the wave absorption rate and the wave transmission rate of the basic unit in the range of 5-26GHz are obtained through simulation. The result is shown in fig. 9, and it can be seen that the low-frequency wave-absorbing band range is 6.37 to 8.17GHz, the relative wave-absorbing bandwidth is 24.76%, the low-frequency wave-absorbing band range is 11.75 to 25.08GHz, and the relative wave-absorbing bandwidth is 72.46% by taking 0.8 as the standard.
The basic unit in this example 1 was simulated under the condition of infinite periodic array, and the simulation resulted in its angular stability under TE and TM polarizations in the range of 5-26 GHz. As shown in fig. 10aTE polarization and fig. 10bTM polarization, the wave absorption rate and the wave transmission rate are respectively shown when electromagnetic waves are incident at 0-35 ° and 0-30 °, and the angle stability is better in a broadband range.
The RCS of the 20 × 20 super-surface constituted by the basic units in this embodiment 1 is simulated and compared with the simulation result of the RCS of the same-area floor, as shown in fig. 11, the wave-absorbing band and the wave-transmitting band have obvious RCS reduction effects.
Two embodiments are given in the present invention, in fact: thickness h of the first dielectric layer (4) 1 The thickness h of the second dielectric layer (5) can be selected from 0.25-0.55mm 2 The range can be selected from 0.4 to 0.8mm, and the thickness h of the air layer (6) is in the range of 1.5 to 2.2mm.
And a first lumped resistor (7), a lumped inductor (8), a lumped capacitor (9) and a first lumped resistor (10) are respectively loaded on each edge of the square ring metal patch in the double-side absorption loss layer (1), wherein the two resistors are respectively positioned on two sides and are separated from the outer edge d of the metal patch 1 The range is 0.6-0.9mm, and the resistance value R of the first lumped resistor 1 Resistance value R of the second lumped resistor 2 Equivalent range is 90-120 omega, inductance value L of lumped inductance 1 The range of 0.6-0.8nH, the capacitance value C of the lumped capacitor 1 In the range of 0.35-0.45pF. Width w of square ring metal 3 The range is 0.6-0.8mm, and the outer side length of the square ring metal is l 3 The range is 4.4-4.6mm, and the center of the square ring metal patch is aligned with the center of the dielectric substrate.
The center of the rectangular metal patch in the artificial magnetic conductor super-surface layer (2) is superposed with the center of the second dielectric layer (5), and the corresponding side length d a The range is selected from 0.5-2mm.
The band-pass frequency selective surface layer (3) is formed by an inner curved square ring gap etched on a metal plate, the shape of the gap is in rotational symmetry with the center of the second medium layer (5), and the outer edge length l of the gap 1 The width w of the gap is selected in the range of 3.9-4.1mm 1 The range is 0.03-0.15mm, and the incurve length is l 2 In the range of 1.3-1.55mm, width w 2 The range is 0.65-0.8mm.
Claims (9)
1. A low-profile broadband super-surface structure with wave-absorbing and wave-transmitting amplitude regulation and control characteristics comprises a basic structural unit consisting of a dielectric layer, a metal layer and an air layer, and is characterized in that the dielectric layer consists of a first dielectric layer (4) and a second dielectric layer (5) which are distributed from top to bottom; the metal layer is composed of a bilateral absorption loss layer (1), an artificial magnetic conductor super surface layer (2) and a band-pass frequency selection surface layer (3) which are distributed from top to bottom, the bilateral absorption loss layer (1) is positioned on the upper surface of a first dielectric layer (4), the artificial magnetic conductor super surface layer (2) and the band-pass frequency selection surface layer (3) are respectively positioned on the upper surface and the lower surface of a second dielectric layer (5), an air layer (6) is positioned between the first dielectric layer (4) and the second dielectric layer (5), and the basic structural unit is copied and translated to obtain a super surface body; the artificial magnetic conductor super-surface layer (2), the second dielectric layer (5) and the band-pass frequency selection surface layer (3) have the in-phase reflection and wave-transmission characteristics of the artificial magnetic conductor; two side absorption loss layer (1) constitute by lumped resistance, lumped inductance, lumped capacitance and square ring metal patch, first lumped resistance (7), lumped inductance (8), lumped capacitance (9) and second lumped resistance (10) of loading respectively on every edge of square ring metal patch, wherein two resistances are located both sides respectively, apart from metal patch outward flange d 1 The range is 0.6-0.9mm, and the lumped inductance and the lumped capacitance are connected in parallel in the middle.
2. The low-profile broadband super-surface structure with the wave-absorbing and wave-transmitting amplitude regulation and control characteristic of claim 1, which is characterized in that: the thickness h of the first dielectric layer (4) 1 In the range of 0.25-0.55mm, the thickness h of the second dielectric layer (5) 2 The dielectric substrate has a relative dielectric constant of epsilon within the range of 0.4-0.8mm r F4BM material of =2.65, the first dielectric layer (4) and the second dielectric layer (5) are separated by an air layer (6) therebetween; the thickness h of the air layer (6) is in the range of 1.5-2.2mm by the formula
The electrical length of the standard profile is calculated.
3. The low-profile broadband super-surface structure with the characteristics of wave absorption and wave transmission amplitude regulation and control of claim 1, which is characterized in that: the resistance value R of the first lumped resistor (7) 1 With the resistance value R of the second lumped resistor (10) 2 Equal, ranging from 90-120 Ω.
4. The low-profile broadband super-surface structure with the wave-absorbing and wave-transmitting amplitude regulation and control characteristic of claim 1, which is characterized in that: inductance value L of the lumped inductor 1 The range is 0.6-0.8nH.
5. The low-profile broadband super-surface structure with the wave-absorbing and wave-transmitting amplitude regulation and control characteristic of claim 1, which is characterized in that: the capacitance value C of the lumped capacitor 1 In the range of 0.35-0.45pF.
6. The low-profile broadband super-surface structure with the wave-absorbing and wave-transmitting amplitude regulation and control characteristic of claim 1, which is characterized in that: the width w of the square ring metal 3 The range of 0.6-0.8mm, the outer side length l of the square ring metal 3 The range is 4.4-4.6mm, and the center of the square ring metal patch is aligned with the center of the dielectric substrate.
7. According toThe low-profile broadband super-surface structure with the characteristics of absorbing and transmitting waves and regulating the amplitude of waves in claim 1 is characterized in that: the artificial magnetic conductor super surface layer (2) is composed of rectangular metal patches, the centers of the metal patches are superposed with the center of the second dielectric layer (5), and the corresponding side length d a The range is 0.5-2mm.
8. The low-profile broadband super-surface structure with the wave-absorbing and wave-transmitting amplitude regulation and control characteristic of claim 1, which is characterized in that: the band-pass frequency selective surface layer (3) is composed of an inner curved square ring gap etched on a metal plate, the shape of the gap is rotationally symmetrical with the center of the second medium layer (5), and the length l of the outer edge of the gap 1 In the range of 3.9-4.1mm, the width w of the gap 1 The range of 0.03-0.15mm, the length of the incurve l 2 In the range of 1.3-1.55mm, width w 2 The range is 0.65-0.8mm.
9. The low-profile broadband super-surface structure with the characteristics of wave absorption and wave transmission amplitude regulation and control of claim 1, which is characterized in that: the super surface is formed by 20 multiplied by 20 basic structure unit replication translation, and the period p of the super surface is 5mm.
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| CN115360526B (en) * | 2022-09-19 | 2023-07-18 | 西安电子科技大学 | Frequency selective super-surface structure with double wave-transmitting frequency bands and three wave-absorbing frequency bands |
| CN116387840B (en) * | 2023-05-25 | 2023-08-22 | 四川九洲电器集团有限责任公司 | Amplitude-combining modulation super-structure surface and transmission array antenna comprising same |
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