CN107086374A - One kind miniaturization low section ultra-wide band connection frequency selection surface and its design method - Google Patents
One kind miniaturization low section ultra-wide band connection frequency selection surface and its design method Download PDFInfo
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- CN107086374A CN107086374A CN201710222729.7A CN201710222729A CN107086374A CN 107086374 A CN107086374 A CN 107086374A CN 201710222729 A CN201710222729 A CN 201710222729A CN 107086374 A CN107086374 A CN 107086374A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
- H01Q15/0006—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
- H01Q15/0013—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
- H01Q15/0006—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
- H01Q15/0053—Selective devices used as spatial filter or angular sidelobe filter
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D30/00—Reducing energy consumption in communication networks
- Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks
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Abstract
The invention discloses one kind miniaturization low section ultra-wide band connection frequency selection surface and its design method, it is included：First metal patch layer, intermediate layer and the second metal patch layer, three sequentially presses together, the unit of first metal patch layer is length and width identical rectangle, the a quarter Fang Huan of outward opening is set respectively on the corner of rectangle, unit center is a complete straight-flanked ring, after planar-periodic continuation, staggered side's ring array is presented；Second metal patch layer, its unit is size and above-mentioned first metal patch layer identical rectangle, and center is crossed metal wires, has rectangular metal paster to be connected with crossed metal wires in each side point midway of unit.While frequency selects the structure to have ultra-wide pass-band performance, the integral thickness of frequency choosing is greatly reduced.Frequency proposed by the present invention selects structural profile extremely low, freely can be combined with the structure such as the covering, shell, protective cover of most thickness, so as to play its unique electrical property.
Description
Technical field
The invention belongs to Electromagnetic Field and Microwave Technology field, a kind of generation miniaturization low section ultra-wide band connection frequency choosing is referred specifically to
Select surface and its design method.
Background technology
Modern war has entered the information age, radar detection to target information determine the destiny of target.Flight
Radar antenna system on device is important scattering source, has very high RCS in some frequencies and angular field of view
(RCS) RCS for, reducing antenna system is that aircraft realizes stealthy important topic.Conventional aircraft diectric antenna covers on full range
Section " transparent ", no stealth effect, therefore the design of wave transparent/stealthy multifunctional all antenna house seems particularly important, for example such as
The back scattering what reduces the radar antenna of Vehicle nose has become one of key factor of influence Stealth performance.
Common dielectric radome can not reduce RCS, although the application of absorbing material can reduce back scattering, influence whether simultaneously
The proper communication of aircraft.And select structure, i.e. frequency selecting surface technique (Frequency using upper frequency in dielectric radome
Selective Surface, FSS) it can then overcome disadvantages described above, because FSS has spa-tial filter properties, can effectively it control
The reflection of electromagnetic wave processed and transmission performance.
Frequency selects structure to be gap between metal patch unit or metal flat by a large amount of periodic arrangements, with given shape
The two-dimensional structure constituted, when incoming electromagnetic wave frequency rate is in the resonant frequency of unit, FSS shows total reflection (patch-type)
Or total transmissivity (aperture type), the electromagnetic wave of other frequencies can pass through FSS (patch-type) or be totally reflected (aperture type), therefore FSS
Substantially it is a kind of special spatial filter, can effectively controls the transmission characteristic of electromagnetic wave.FSS technologies are applied to antenna
On cover, so that it may so that antenna house obtains the function of frequency selection, carry out frequency selectivity wave transparent.Protected in design frequency range internal antenna cover
Hold normal wave transparent；And design outside frequency range, equivalent to one metal cap of antenna house, by electromagnetic wave shielding.Its role is to make to fly
Frequency range is inside and outside shows different RCS characteristics in design for row device aerial compartment.
Periodical《Telecom technology》2012,52 (3):What 371-374, Li Yuqing, Pei Zhibin, Qu Shaobo et al. were proposed " has
The design of broadband properties band logical frequency-selective surfaces "；Emulation in journal article shows that 3 limits of frequency choosing are respectively
6.44GHz, 8.80GHz and 10.97GHz.3 limits couple the flat-top broad passband to form a center Insertion Loss very little, and center is inserted
It is only 0.45dB to damage maximum, and 3dB bandwidth of operation is now 5.40-11.47GHz, and absolute bandwidth is 6.07GHz, and relative bandwidth reaches
To 72%.And outside passband, S2l can promptly drop to below -20dB and be always maintained at, select structure that there is good sideband frequently
Selection and Out-of-band rejection characteristic.But one problem of the technical scheme objective reality, due to having used multilayer cascade structure, frequency choosing
Thickness is larger, and section is higher.As a kind of microwave passive material, the thickness of structure directly determines its applicability.Frequency is selected
Surface is mainly used in the high RCS nearby components of aircraft, is used in the form of covering or outside cover, therefore the big frequency choosing of thickness
Structure will propose sizable difficulty to the design of covering and cover, tend not to practical application.
Periodical literature：Liang B Y,Xue Z H,Li W M,et al.Ultra-wideband frequency
selective surface at K and Ka band[C].IEEE International Conference on
Microwave Technology&Computational Electromagnetics.IEEE,2013:55-57, its purpose is
A kind of frequency-selective surfaces structure of new ultra-wide passband is designed, the filtering wave transparent demand closed for ultra wide band electrically magnetic field provides structure
Scheme.Bondline thickness about 0.05mm between unit size 2.898mm*4.733mm, structure thickness in monolayer 2mm, dielectric-slab is overall thick
Spend about 6.1mm.- three dB bandwidth is from 17.83GHz to 45.66GHz, and relative bandwidth reaches 88%, belongs to the frequency choosing of ultra-wide passband.But should
Still there is the problem of high thickness of section is big in technical scheme, although the number of plies only has three layers, but gross thickness remains unchanged and reached 6.1mm,
Application is affected significantly.
The content of the invention
Above-mentioned the deficiencies in the prior art are directed to, low section ultra-wide passband is minimized it is an object of the invention to provide one kind
Frequency-selective surfaces and its design method, to solve defect present in above-mentioned prior art.This invention ensures that frequency selects structure
While with ultra-wide pass-band performance, the integral thickness of frequency choosing is greatly reduced；Can freely with most thickness
The structures such as covering, shell, protective cover are combined, so as to play its unique electrical property.
To reach above-mentioned purpose, a kind of miniaturization low section ultra-wide band connection frequency of the invention selects surface, and it is by three layers
Constitute, be respectively：First metal patch layer, intermediate layer and the second metal patch layer, three sequentially press together, first gold medal
The unit for belonging to patch layer is a quarter Fang Huan for setting outward opening on length and width identical rectangle, the corner of rectangle respectively, single
First center is a complete straight-flanked ring, after planar-periodic continuation, and staggered side's ring array is presented；Second metal is pasted
Lamella, its unit is size and above-mentioned first metal patch layer identical rectangle, and center is crossed metal wires, in each of unit
Side point midway has rectangular metal paster to be connected with crossed metal wires, after planar-periodic continuation, and cross gold is presented
The class grid-like array that category line and rectangular metal paster are alternately present.
Preferably, described intermediate layer uses high-frequency microwave circuit board.
A kind of miniaturization low section ultra-wide band connection frequency of the present invention selects the design method on surface, including as follows：
1) according to the bandwidth of required frequency-selective surfaces and section requirement, suitable microwave filter is selected, and provide
Imitate circuit；
2) impedance matching principle is followed, the equivalent circuit of microwave filter is done into approximate transform to the shape for matching frequency choosing design
Formula, and draw the basic structure of frequency choosing；
3) it is public by the conversion formula and parallel circuit resonant frequency of distributed constant electric device and lumped parameter electric device
Formula, derives the parameter area in the basic structure of above-mentioned design frequency choosing；
4) above-mentioned steps 2 are realized using frequency metal patch, the medium Rotating fields chosen) equivalent circuit in electric capacity, inductance
With the electrical property of transmission line, structure is specifically clearly selected frequently；
5) rapidoprint is selected, designed frequency-selective surfaces finished product is produced using copper-clad laminate technology.
Preferably, above-mentioned steps 1) in the bandwidth of operation of microwave filter select the bandwidth of operation of structure should be same with respective tones
Belong to an order of magnitude, such as ultra wide band frequency selects structure to select ultra-wide band filter as reference.The frequency of the microwave filter
Response curve exponent number determines that the structural thickness of frequency-selective surfaces is section, and the exponent number of microwave filter is higher, frequency selection table
The section in face is higher.
Preferably, above-mentioned steps 1) in microwave filter equivalent circuit for single order shunt capacitance inductor combination resonance electricity
Road, resistance Z1 and resistance Z2 are respectively input and the output impedance of two-port network in equivalent circuit；Inductance L1 and electric capacity C1, electricity
Feel in two groups of inductor-capacitor series resonant tanks of L3 and electric capacity C3, inductance L1, L3 value height, electric capacity C1, C3 value are low；Electric capacity
In this group of capacitance-inductance shunt-resonant circuit of C2 and inductance L2, electric capacity C2 value height, inductance L2 value are low.
Preferably, above-mentioned steps 2) in, first, the input of two-port network and freely hindering for output impedance free space
Anti- Z0=377 Ω are brought into, secondly, ignore the low electric capacity C of numerical value1、C3With inductance L2, according to transmission line theory, by original electricity
The T-shaped network L of sense-capacitance-inductance1-C2-L3It is transformed to pin network C '-the L '-C ' of capacitance-inductance-electric capacity；By short transmission line
Equivalent circuit regards the loop of the upper specific electrical resistance formation of capacitance-inductance series connection in parallel as, by an electric capacity in π types networking
C ' short transmission line Z12Instead of while remaining electric capacity C ' and inductance L ' component values are C and L to match π in corrective networks
The overall impedance of type network C '-L '-C ' circuits；Equivalent circuit is corresponded into frequency to choose, Z0Use the free impedance of free space
Instead of electric capacity C realizes its capacitance characteristic, transmission line Z using layer of metal paster12Realize that its impedance is special using one layer of dielectric layer
Property, inductance L realizes its inductance characteristic using layer of metal paster；It is thin metal patch layer to obtain first and third layer, and the second layer is to have
Certain thickness dielectric layer.
Preferably, above-mentioned steps 3) value of electrical component corresponds to frequency-selective surfaces structure by below equation in circuit
In obtain the design parameter scope of paster and dielectric layer：
Wherein, C is the capacitance of final equivalent circuit, and L is the inductance value of final equivalent circuit, ε0≈8.85*10^(-
12)、μ0≈ 1.26*10^ (- 6) and π ≈ 3.14 are constant constant, εrFor the dielectric constant of the particular medium layer of selection, p is frequency
The unit periodic dimensions on surface are selected, s is the interval width of first layer metal paster, and w is second layer grid metal line width；s
With w representatives for the overall dimensions after cellular construction cyclic extension, in the parameter that unit is not appeared alone in；By formula (1)
(2) understand that increasing unit periodic dimensions p, reduction metal patch interval width s or metal grate line width w improve C and L value；
According to parallel circuit resonant frequencyObtain, resonant frequency is proportional to unit periodic dimensions p, is inversely proportional to metal patch
Interval width s, metal grate line width w.
Preferably, above-mentioned steps 4) utilize the splendid electrical property matching step 2 of electric conductivity) electric capacity and electricity in electrical equivalent
The metal patch of the metal patch of sensing unit, in a distributed manner the structure of electric capacity realize the property of lump type electric capacity C ' in circuit
Energy；Similarly, inductance L ' characteristic is realized with the structure of grid using the metal of same material；By with appropriate dielectric constant and
The high-frequency microwave circuit board of loss angle tangent replaces short transmission line, obtains a capacitive character metal patch layer-impedance matching medium
The frequency-selective surfaces structure of flaggy-inductive metal patch layer.
Preferably, above-mentioned steps 5) in the processing exemplars of frequency-selective surfaces comprise at least 3*3 unit a period of time, first layer
With second layer metal paster from the splendid metal of electric conductivity, paster thickness control is in 35um-70um, the medium in intermediate layer
The relative dielectric constant requirement derived when plate needs to meet design, while ensure that loss angle tangent is low, during processing dielectric-slab and
Metal patch layer needs close connection, is pressed using copper-clad laminate technology.
Preferably, above-mentioned steps 5) in from the splendid metal of electric conductivity be silver or copper.
Beneficial effects of the present invention：
The present invention greatly reduces the overall thick of frequency choosing while ensure that frequency selects structure to have ultra-wide pass-band performance
Degree.Frequency proposed by the present invention selects structural profile extremely low, can be freely with the covering, shell, protective cover of most thickness etc.
Structure is combined, so as to play its unique electrical property.Have very in fields such as Stealth, electromagnetic compatibility, radiation shields
High practical value.
Brief description of the drawings
Fig. 1 is frequency-selective surfaces complete structure top view.
Fig. 2 is frequency-selective surfaces complete structure side view.
Fig. 3 is frequency-selective surfaces first layer cellular construction top view.
Fig. 4 is top view after frequency-selective surfaces first layer cellular construction planar-periodic continuation.
Fig. 5 is frequency-selective surfaces third layer cellular construction top view.
Fig. 6 is top view after frequency-selective surfaces third layer cellular construction planar-periodic continuation.
Fig. 7 be embodiment in microwave filter equivalent circuit diagram.
Fig. 8 is the equivalent circuit diagram for being adapted to frequency-selective surfaces design in embodiment after approximate transform.
Fig. 9 is reflectivity curve and transmission curve figure of the frequency-selective surfaces under the conditions of vertical incidence.
Figure 10 is reflectivity curve and transmission curve figure of the frequency-selective surfaces under the conditions of certain angle is incident.
Figure 11 is frequency-selective surfaces first layer metal paster surface field intensity distribution at the resonant frequency fx.
Figure 12 is frequency-selective surfaces second layer metal paster surface field intensity distribution at the resonant frequency fx.
Embodiment
For the ease of the understanding of those skilled in the art, the present invention is made further with reference to embodiment and accompanying drawing
It is bright, the content that embodiment is referred to not limitation of the invention.
Referring to figs. 1 to shown in Fig. 6, a kind of miniaturization low section ultra-wide band connection frequency of the invention selects surface, and it is by three
Layer is constituted, and is respectively：First metal patch layer 1, the metal patch of middle dielectric layer 2 and second layer 3, three is sequentially pressed together on one
Rise, the unit of first metal patch layer 1 is set outward opening on length and width identical rectangle, the corner of rectangle respectively four points
One of Fang Huan, unit center sets a complete straight-flanked ring, after planar-periodic continuation, and staggered side's ring battle array is presented
Row；Second metal patch layer 3, its unit is size and above-mentioned first metal patch layer identical rectangle, and center is cross
Metal wire, has rectangular metal paster to be connected with crossed metal wires, prolongs in planar-periodic in each side point midway of unit
After opening up, the class grid-like array that crossed metal wires and rectangular metal paster are alternately present is presented.
Wherein, described intermediate layer uses high-frequency microwave circuit board, and its type selecting should be with step 2) short pass in electrical equivalent
The matches impedances of defeated line, may be selected Rogers series of high-frequency microwave circuit boards.It is noted that frequency-selective surfaces actual processing
When n*n (n be positive integer and more than or equal to 3) individual unit composition complete structure is typically chosen to embody its cyclophysis, intermediate layer
High-frequency circuit board size match understructure size all the time, be (n*p) millimeter * (n*p) millimeter, wherein p be frequency choosing
Select the surface cell cycle.
A kind of miniaturization low section ultra-wide band connection frequency of the present invention selects the design method on surface, including as follows：
1) according to the bandwidth of required frequency-selective surfaces and section requirement, suitable microwave filter is selected, and provide
Imitate circuit；
Wherein, above-mentioned steps 1) in the bandwidth of operation of microwave filter select structure close with respective tones, microwave filter
The frequency response curve exponent number of ripple device determines that the structural thickness of frequency-selective surfaces is section, and the exponent number of microwave filter is higher,
The section of frequency-selective surfaces is higher.To meet the requirement of ultra wide band and low section, selection single order broadband band logical microwave filter
For prototype, the equivalent circuit of wave filter can be drawn according to circuit analysis basic theories.This circuit is only intended to illustrate microwave
The operation principle of wave filter, therefore the numerical value of these electrical components need not be quantified, only need qualitative description.
The equivalent circuit of wave filter in the present embodiment such as accompanying drawing 7, it is seen that the equivalent circuit of this microwave filter is single order
Shunt capacitance inductor combination resonance circuit；Resistance Z1With resistance Z2The input and output of two-port network respectively in equivalent circuit
Impedance；Inductance L1With electric capacity C1, inductance L3With electric capacity C3In this two groups of inductor-capacitor series resonant tanks, inductance value L1、L3High,
Capacitance C1、C3It is low；And electric capacity C2With inductance L2In this group of capacitance-inductance shunt-resonant circuit, capacitance C2High, inductance value L2
It is low.
2) impedance matching principle is followed, the equivalent circuit of microwave filter is done into the shape that approximate transform selects design to suitable frequency
Formula, and draw the basic structure of frequency choosing；
Firstly, since frequency choosing is a kind of space structure, the input of two-port network and output impedance free space from
By impedance Z0=377 Ω are brought into, secondly, ignore the low electric capacity C of numerical value1、C3With inductance L2, will be original according to transmission line theory
The T-shaped network L of inductor-capacitor-inductance1-C2-L3It is transformed to pin network C '-the L '-C ' of capacitance-inductance-electric capacity；By short transmission line
Equivalent circuit regard the loop of the upper specific electrical resistance formation of capacitance-inductance series connection in parallel as, by an electricity in π types networking
Hold C ' short transmission line Z12Instead of while remaining electric capacity C ' and inductance L ' component values are C and L to match in corrective networks
The overall impedance of pin network C '-L '-C ' circuits；So far it can obtain π types capacitance-resistance-inductance network C-Z in Fig. 812- L,
It can be seen that this circuit is single order resonance structure.Equivalent circuit is corresponded into frequency to choose, Z0Replaced using the free impedance of free space,
Electric capacity C realizes its capacitance characteristic, transmission line Z using layer of metal paster12Its impedance operator, inductance are realized using one layer of dielectric layer
L realizes its inductance characteristic using layer of metal paster；Understand that Fig. 8 corresponding frequency of equivalent circuit elects three-decker as, obtain the
First, three layers are thin metal patch layer, and the second layer is to have certain thickness dielectric layer.
3) it is public by the conversion formula and parallel circuit resonant frequency of distributed constant electric device and lumped parameter electric device
Formula, derives the parameter area in the basic structure of above-mentioned design frequency choosing；
Above-mentioned steps 3) value of electrical component is corresponded to by below equation and obtained in frequency-selective surfaces structure in circuit
The design parameter scope of paster and dielectric layer：
Wherein, C is the capacitance of final equivalent circuit, and L is the inductance value of final equivalent circuit, ε0≈8.85*10^(-
12)、μ0≈ 1.26*10^ (- 6) and π ≈ 3.14 are constant constant, εrFor the dielectric constant of the particular medium layer of selection, p is frequency
The unit periodic dimensions on surface are selected, s is the interval width of first layer metal paster, and w is second layer grid metal line width；s
With w representatives for the overall dimensions after cellular construction cyclic extension, in the parameter that unit is not appeared alone in；By formula (1)
(2) understand that increasing unit periodic dimensions p, reduction metal patch interval width s or metal grate line width w improve C and L value；
According to parallel circuit resonant frequencyObtain, resonant frequency is proportional to unit periodic dimensions p, is inversely proportional to metal patch
Interval width s, metal grate line width w.
Although selecting the parameter h of structural thickness not appear in the derivation of equation it should be noted that representing frequency, h value is determined
The fixed Space Coupling intensity selected frequently between first layer and third layer, because the design in the present embodiment is single order resonance structure, h's
Scope control is between 0.5-1.5mm, with a fairly low sectional thickness.
Wave filter conversion after equivalent circuit in electric device parameter for C=6.34*10^ (- 13) F, L=1.43*10^ (-
8)H.The demand that the minimum frequency of passband (6GHz) is expected in design is primarily looked at, by fl=c/ λlUnderstand that the wavelength at the frequency is
P values in 50mm, embodiment are in λ0/ 5 (control is between 9.95mm-10.05mm), the half-wave long structure phase with traditional frequency choosing
Than with miniaturization feature.Then, bring p value into formula (1) (2), obtain parameter s value 2.15mm-2.25mm it
Between, between 0.25 and 0.35 mm, the two parameters do not occur directly parameter w value in design structure, but will determine specific ginseng
Several values.For example in the present embodiment, parameter s value is equal to (p-2a2-a4)/2, parameter w value is equal to (a3*(a4-a1)/a4+
2a1*a2/a4).Finally, the coupling condition of structure upper/lower layer metallic paster is selected frequently according to reality, adjusting and optimizing parameter h value exists
Between 0.95mm-1.05mm.
4) above-mentioned steps 2 are realized using frequency metal patch, the medium Rotating fields chosen) equivalent circuit in electric capacity, inductance
With the electrical property of transmission line, structure is specifically clearly selected frequently；
Above-mentioned steps 4) utilize the splendid electrical property matching step 2 of electric conductivity) electric capacity and inductance element in electrical equivalent
Metal patch, in a distributed manner the structure of electric capacity realize the performances of lump type electric capacity C ' in circuit；Similarly, same material is utilized
The metal of matter realizes inductance L ' characteristic with the structure of grid；By the Rogers with appropriate dielectric constant and loss angle tangent
RT5880 high-frequency microwave circuit boards replace short transmission line, obtain a capacitive character metal patch layer-impedance matching medium flaggy-electricity
The frequency-selective surfaces structure of perceptual metal patch layer.The shape and arrangement mode of distributed capacitor inductance directly affect frequency and are selected in
Effect and stability when free space works, of good performance set can be drawn by selection figure and after carrying out parameter optimization
Meter.
The design parameter on the miniaturization low section ultra-wide band connection frequency selection surface proposed in the present embodiment is as shown in table 1,
Design parameter εr, p and h value refer to step 3) in derivation result, εrThe material selection of dielectric layer is determined, p determines frequency selection
The size of surface cell, h determines the integral thickness of frequency-selective surfaces；And s and w span is instructed in double layer of metal paster
All design parameter (a1-a4, b1-b4) value.The shape of design is not unique, and the structure of the present embodiment is that completion parameter is excellent
Result after change.The vertical view signal of the complete structure obtained after the frequency-selective surfaces unit periodic extension that Fig. 1 proposes for patent
Figure, intuitively embodies the cyclophysis of its structure, and herein from the array structure of 9 unit compositions, specific element number can visual field
Conjunction needs to determine.Table 1 is as follows：
Table 1
| Parameter name | a1 | a2 | a3 | a4 | p |
| Parameter value | 0.4mm | 1.4mm | 0.4mm | 2.8mm | 10.0mm |
| Parameter name | b1 | b2 | b3 | b4 | h |
| Parameter value | 2.8mm | 1.4mm | 0.3mm | 10.0mm | 1.0mm |
5) select suitable rapidoprint, using copper-clad laminate technology produce designed frequency-selective surfaces into
Product.
Above-mentioned steps 5) in the processing exemplars of frequency-selective surfaces comprise at least 3*3 unit a period of time, first layer and second
Layer metal patch is from the splendid metal of electric conductivity, and optimal material is silver (resistivity is 15.86 ρ/n Ω m), general to select
Copper (resistivity is 16.78 ρ/n Ω m) can have preferable effect, and paster thickness control is in 35um-70um, to structure electricity
Performance has no significant effect, and the pattern form of paster etches system using printed circuit board (PCB) national regulation (QJ3103-99) standard technology
Into.The dielectric-slab in intermediate layer needs to meet the relative dielectric constant requirement derived during design, while ensureing that loss angle tangent is use up
May be relatively low, typically select the structure proposed in Rogers high-frequency microwave circuit board, this patent to select Rogers-RT5880 materials
(relative dielectric constant is 2.2 to material, and relative permeability is 1.0, and loss angle tangent is 0.0009), to work well.Medium during processing
Plate and metal patch layer need close connection, copper foil covered using the use in printed circuit board (PCB) national regulation (GB4722-84)
Pressing plate standard technique is pressed.
From figure 1 above, frequency-selective surfaces integrally have a fully rotating symmetry characteristic, and it is certain that this characteristic assigns it
Polarizer stability.Simultaneously because the first layer metal paster of frequency-selective surfaces uses multiple miniaturization resonant element staggered rows
Row, second layer metal paster is matched from disresonance structure with first layer metal paster, and its unit size is far smaller than general
/ 2nd wavelength that passband rate selection surface cell needs, angle stability has also been carried than legacy frequencies selection surface
Rise.Simultaneously as with small size performance, by taking 3*3 unit as an example, overall structure size is only 3cm*3cm, it is seen that it is minimum
Working size is sufficient for the demand of most of occasions.
Emulated by the softwares of CST STUDIO SUITE 2016, the visible frequency-selective surfaces structure is one in Fig. 9
Rank resonance structure, and resonance frequency nearby reflectivity curve it is more smooth, correspondence equivalent circuit in Q values it is relatively low, i.e., 3dB passbands from
5.27GHz is covered to 22.62GHz, and with a width of 17.35GHz, the relative bandwidth for center frequency point 13.95Ghz reaches
124.4%, the aerodiscone antenna for covering whole 6-18GHz often uses frequency range, and table is selected far beyond ultra wide band frequency in the prior art
The relative bandwidth in face.Meanwhile, the frequency-selective surfaces also have certain angle stability.As shown in Figure 10, with 15 degree of angles
Spend under oblique incidence, 3dB passbands are covered to 21.42GHz from 5.40GHz, with a width of 16.02GHz, and relative bandwidth is 119.5%.
So that under 30 degree of angle oblique incidences, 3dB passbands are covered to 18.89GHz from 5.83GHz, and with a width of 13.06GHz, relative bandwidth is
105.7%, it is seen that in the case of oblique incidence, frequency-selective surfaces still ensure that more than 100% relative bandwidth, with suitable
Angle stability.
Figure 11 and Figure 12 be the double layer of metal paster of frequency-selective surfaces structure in the case of electromagnetic wave vertical incidence, humorous
Shake the surface electric field distribution situation at frequency (12.8GHz) place, it can be seen that surface electric field distribution is more uniform, each portion of paster
Divide and all encouraged strong electric field (black region field strength is higher), it was demonstrated that the bandpass-type frequency-selective surfaces are being transferred energy
Loss is low, and efficiency of transmission is high, reasonable in design.
Concrete application approach of the present invention is a lot, and described above is only the preferred embodiment of the present invention, it is noted that for
For those skilled in the art, under the premise without departing from the principles of the invention, some improvement can also be made, this
A little improve also should be regarded as protection scope of the present invention.
Claims (10)
1. one kind miniaturization low section ultra-wide band connection frequency selection surface, it is constituted by three layers, it is characterised in that be respectively：The
One metal patch layer, intermediate layer and the second metal patch layer, three sequentially press together, the unit of first metal patch layer
For length and width identical rectangle, a quarter Fang Huan of outward opening is set respectively, unit center is one complete on the corner of rectangle
Whole straight-flanked ring, after planar-periodic continuation, is presented staggered side's ring array；Second metal patch layer, its unit is
Size and above-mentioned first metal patch layer identical rectangle, center is crossed metal wires, equal in each side point midway of unit
There is rectangular metal paster to be connected with crossed metal wires, after planar-periodic continuation, crossed metal wires and rectangle gold are presented
The class grid-like array that category paster is alternately present.
2. miniaturization low section ultra-wide band connection frequency selection surface according to claim 1, it is characterised in that in described
Interbed uses high-frequency microwave circuit board.
3. a kind of minimize the design method that low section ultra-wide band connection frequency selects surface, it is characterised in that including as follows：
1) according to the bandwidth of required frequency-selective surfaces and section requirement, suitable microwave filter is selected, and provide equivalent electric
Road；
2) impedance matching principle is followed, the equivalent circuit of microwave filter is done into approximate transform to the form for matching frequency choosing design,
And draw the basic structure of frequency choosing；
3) by distributed constant electric device and the conversion formula and parallel circuit resonant frequency equation of lumped parameter electric device, push away
Export the parameter area in the basic structure of above-mentioned design frequency choosing；
4) above-mentioned steps 2 are realized using frequency metal patch, the medium Rotating fields chosen) equivalent circuit in electric capacity, inductance and biography
The electrical property of defeated line, clearly specifically selects structure frequently；
5) rapidoprint is selected, designed frequency-selective surfaces finished product is produced using copper-clad laminate technology.
4. miniaturization low section ultra-wide band connection frequency according to claim 3 selects the design method on surface, its feature exists
In above-mentioned steps 1) in bandwidth of operation and the respective tones of microwave filter select structure to belong to an order of magnitude together, microwave filter
The frequency response curve exponent number of ripple device determines that the structural thickness of frequency-selective surfaces is section, and the exponent number of microwave filter is higher,
The section of frequency-selective surfaces is higher.
5. miniaturization low section ultra-wide band connection frequency according to claim 4 selects the design method on surface, its feature exists
In above-mentioned steps 1) in microwave filter equivalent circuit be single order shunt capacitance inductor combination resonance circuit, resistance Z1And electricity
Hinder Z2The input of two-port network and output impedance respectively in equivalent circuit；Inductance L1With electric capacity C1, inductance L3With electric capacity C3Two
In group inductor-capacitor series resonant tank, inductance L1、L3Value is high, electric capacity C1、C3Value it is low；Electric capacity C2With inductance L2This group
In capacitance-inductance shunt-resonant circuit, electric capacity C2Value is high, inductance L2Value it is low.
6. miniaturization low section ultra-wide band connection frequency according to claim 3 selects the design method on surface, its feature exists
In above-mentioned steps 2) in, first, the input of two-port network and the free impedance Z of output impedance free space0=377 Ω
Bring into, secondly, ignore the low electric capacity C of numerical value1、C3With inductance L2, according to transmission line theory, by original inductor-capacitor-inductance T
Type network L1-C2-L3It is transformed to pin network C '-the L '-C ' of capacitance-inductance-electric capacity；Regard the equivalent circuit of short transmission line as one
The loop of the individual upper specific electrical resistance formation of capacitance-inductance series connection in parallel, by an electric capacity C ' short transmission line Z in π types networking12
Instead of while remaining electric capacity C ' and inductance L ' component values are C and L to match pin network C '-L '-C ' in corrective networks
The overall impedance of circuit；Equivalent circuit is corresponded into frequency to choose, Z0Replaced using the free impedance of free space, electric capacity C is used
Layer of metal paster realizes its capacitance characteristic, transmission line Z12Its impedance operator is realized using one layer of dielectric layer, inductance L uses one layer
Metal patch realizes its inductance characteristic；It is thin metal patch layer to obtain first and third layer, and the second layer is to have certain thickness medium
Layer.
7. miniaturization low section ultra-wide band connection frequency according to claim 3 selects the design method on surface, its feature exists
In above-mentioned steps 3) in circuit the value of electrical component corresponded to by below equation obtained in frequency-selective surfaces structure paster and
The design parameter scope of dielectric layer：
<mrow>
<mi>C</mi>
<mo>=</mo>
<mo>-</mo>
<msub>
<mi>&epsiv;</mi>
<mn>0</mn>
</msub>
<msub>
<mi>&epsiv;</mi>
<mi>r</mi>
</msub>
<mfrac>
<mrow>
<mn>2</mn>
<mi>p</mi>
</mrow>
<mi>&pi;</mi>
</mfrac>
<mi>ln</mi>
<mrow>
<mo>(</mo>
<mi>s</mi>
<mi>i</mi>
<mi>n</mi>
<mfrac>
<mrow>
<mi>&pi;</mi>
<mi>s</mi>
</mrow>
<mrow>
<mn>2</mn>
<mi>p</mi>
</mrow>
</mfrac>
<mo>)</mo>
</mrow>
<mo>-</mo>
<mo>-</mo>
<mo>-</mo>
<mrow>
<mo>(</mo>
<mn>1</mn>
<mo>)</mo>
</mrow>
</mrow>
<mrow>
<mi>L</mi>
<mo>=</mo>
<mo>-</mo>
<msub>
<mi>&mu;</mi>
<mn>0</mn>
</msub>
<mfrac>
<mi>p</mi>
<mrow>
<mn>2</mn>
<mi>&pi;</mi>
</mrow>
</mfrac>
<mi>l</mi>
<mi>n</mi>
<mrow>
<mo>(</mo>
<mi>s</mi>
<mi>i</mi>
<mi>n</mi>
<mfrac>
<mrow>
<mi>&pi;</mi>
<mi>w</mi>
</mrow>
<mrow>
<mn>2</mn>
<mi>p</mi>
</mrow>
</mfrac>
<mo>)</mo>
</mrow>
<mo>-</mo>
<mo>-</mo>
<mo>-</mo>
<mrow>
<mo>(</mo>
<mn>2</mn>
<mo>)</mo>
</mrow>
</mrow>
Wherein, C is the capacitance of final equivalent circuit, and L is the inductance value of final equivalent circuit, ε0≈8.85*10^(-12)、μ0
≈ 1.26*10^ (- 6) and π ≈ 3.14 are constant constant, εrFor the dielectric constant of the particular medium layer of selection, p selects for frequency
The unit periodic dimensions on surface, s is the interval width of first layer metal paster, and w is second layer grid metal line width；S and w generations
Table for the overall dimensions after cellular construction cyclic extension, in the parameter that unit is not appeared alone in；Can by formula (1) (2)
Know that increasing unit periodic dimensions p, reduction metal patch interval width s or metal grate line width w improve C and L value；According to flat
Row circuit resonant frequenciesObtain, resonant frequency is proportional to unit periodic dimensions p, is inversely proportional to metal patch interval wide
Spend s, metal grate line width w.
8. miniaturization low section ultra-wide band connection frequency according to claim 3 selects the design method on surface, its feature exists
In above-mentioned steps 4) utilize the splendid electrical property matching step 2 of electric conductivity) gold of electric capacity and inductance element in electrical equivalent
Belong to paster, the structure of electric capacity realizes the performances of lump type electric capacity C ' in circuit in a distributed manner；Similarly, the gold of same material is utilized
Category realizes inductance L ' characteristic with the structure of grid；By the high-frequency microwave circuit with appropriate dielectric constant and loss angle tangent
Plate replaces short transmission line, obtains the frequency of a capacitive character metal patch layer-impedance matching medium flaggy-inductive metal patch layer
Rate selects surface texture.
9. miniaturization low section ultra-wide band connection frequency according to claim 3 selects the design method on surface, its feature exists
In above-mentioned steps 5) in the processing exemplars of frequency-selective surfaces comprise at least 3*3 unit a period of time, first layer and second layer metal
Paster is from the splendid metal of electric conductivity, and paster thickness control is in 35um-70um, and the dielectric-slab in intermediate layer needs satisfaction to set
The relative dielectric constant requirement that timing is derived, while ensureing that loss angle tangent is low, dielectric-slab and metal patch layer are needed during processing
Closely to connect, be pressed using copper-clad laminate technology.
10. miniaturization low section ultra-wide band connection frequency according to claim 3 selects the design method on surface, its feature exists
In above-mentioned steps 5) in from the splendid metal of electric conductivity be silver or copper.
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| CN108565557A (en) * | 2018-04-20 | 2018-09-21 | 西安天和防务技术股份有限公司 | A kind of frequency-selective surfaces and ultra-thin frequency select antenna house |
| CN109873250A (en) * | 2019-03-27 | 2019-06-11 | 北京理工大学 | A kind of overload protection antenna house and preparation method thereof |
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| CN112784464A (en) * | 2021-01-30 | 2021-05-11 | 中国人民解放军空军工程大学 | Wave absorber with arbitrary absorption frequency spectrum based on intelligent algorithm and design method thereof |
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| CN114614266A (en) * | 2022-05-11 | 2022-06-10 | 成都飞机工业（集团）有限责任公司 | X-band-pass absorption and transmission integrated frequency selective surface structure |
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| CN112803171A (en) * | 2019-11-14 | 2021-05-14 | 南京理工大学 | Electromagnetic lens with miniaturized frequency selective surface |
| CN112803171B (en) * | 2019-11-14 | 2022-08-12 | 南京理工大学 | Electromagnetic lens with miniaturized frequency selective surface |
| CN111029724A (en) * | 2019-12-24 | 2020-04-17 | Oppo广东移动通信有限公司 | Mobile terminal |
| CN111613892A (en) * | 2020-06-29 | 2020-09-01 | 中国舰船研究设计中心 | Double-side steep out-of-band rejection frequency selection radome composite material interlayer structure |
| CN112784464A (en) * | 2021-01-30 | 2021-05-11 | 中国人民解放军空军工程大学 | Wave absorber with arbitrary absorption frequency spectrum based on intelligent algorithm and design method thereof |
| CN112784464B (en) * | 2021-01-30 | 2023-02-21 | 中国人民解放军空军工程大学 | Wave absorber with arbitrary absorption frequency spectrum based on intelligent algorithm and design method thereof |
| CN114976660A (en) * | 2021-02-23 | 2022-08-30 | 西安电子科技大学 | Band-pass frequency selection surface with ultra-wide band out-of-band rejection characteristic |
| CN114614266A (en) * | 2022-05-11 | 2022-06-10 | 成都飞机工业（集团）有限责任公司 | X-band-pass absorption and transmission integrated frequency selective surface structure |
| CN114614266B (en) * | 2022-05-11 | 2022-08-12 | 成都飞机工业（集团）有限责任公司 | X-band-pass absorption and penetration integrated frequency selective surface structure |
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