CN114421174A - X-waveband absorption and transmission integrated frequency selection surface unit structure and surface structure - Google Patents

X-waveband absorption and transmission integrated frequency selection surface unit structure and surface structure Download PDF

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Publication number
CN114421174A
CN114421174A CN202210120202.4A CN202210120202A CN114421174A CN 114421174 A CN114421174 A CN 114421174A CN 202210120202 A CN202210120202 A CN 202210120202A CN 114421174 A CN114421174 A CN 114421174A
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band
base layer
medium base
metal patch
frequency selective
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Inventor
王佳仪
席瑞
蔡通
王雪丁
郑斌
陈红胜
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Zhejiang Haipo Microwave Technology Co ltd
Zhejiang University ZJU
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Zhejiang Haipo Microwave Technology Co ltd
Zhejiang University ZJU
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Publication of CN114421174A publication Critical patent/CN114421174A/en
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01QANTENNAS, i.e. RADIO AERIALS
    • H01Q15/00Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
    • H01Q15/0006Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
    • H01Q15/0013Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective
    • H01Q15/0026Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective said selective devices having a stacked geometry or having multiple layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01QANTENNAS, i.e. RADIO AERIALS
    • H01Q17/00Devices for absorbing waves radiated from an antenna; Combinations of such devices with active antenna elements or systems
    • H01Q17/008Devices for absorbing waves radiated from an antenna; Combinations of such devices with active antenna elements or systems with a particular shape

Abstract

The invention discloses a frequency selective surface unit structure integrating X-band absorption and permeation and a surface structure, which relate to the technical field of microwaves, wherein the unit structure comprises a first medium base layer, a second medium base layer and an air layer between the first medium base layer and the second medium base layer; a square annular metal patch and a cross metal patch are arranged on one side of the first medium base layer close to the second medium base layer; one side of the second medium base layer, which is far away from the first medium base layer, is provided with two square ring-shaped metal patches and a resistor patch welded on the two square ring-shaped metal patches. The invention discloses a frequency selective surface unit structure of X-waveband in-band transmission-band out-of-band absorption waves and a surface structure formed according to the unit structure, which can improve the absorption effect of a reflection frequency band, have better in-band transmission coefficient and wider bandwidth of a transmission frequency band, thereby realizing the in-band broadband transmission of X-waveband and obtaining higher absorption rate out-of-band through a loading resistor.

Description

X-waveband absorption and transmission integrated frequency selection surface unit structure and surface structure
Technical Field
The invention relates to the technical field of microwaves, in particular to a frequency selective surface unit structure integrating absorption and transmission of an X waveband and a surface structure.
Background
The X-band refers to electromagnetic waves with a frequency range from 8GHz to 12GHz, and is widely applied to the fields of radar detection and satellite communication. The frequency selective surface is a two-dimensional periodic structure with planar metal array elements (patches or aperture units smaller than the operating wavelength) on a dielectric substrate, and the frequency selective surface structure which shows transmission and reflection characteristics at a certain resonance frequency can generate good reflection characteristics in a specific frequency range of a stop band thereof, and reflection signals are absorbed by introducing some absorption array elements. The reflection-type frequency selective structure realizes stealth by utilizing reflection of a specific frequency band, but the reflection-type stealth gradually fails along with the development of the reconnaissance technology. Utilize absorption type frequency to select structural design to produce neotype antenna house, stealthy through the absorption frequency channel, can normally work at the transmission frequency channel, effectively prevent enemy's interference, this kind of antenna house radar scattering sectional area's performance has also obtained obvious improvement. However, the problem of poor absorption effect of the reflection band still exists in the prior art, and therefore, how to provide a frequency selective surface structure capable of transmitting waves in an in-band broadband and having high out-of-band absorption rate is a problem that needs to be solved by those skilled in the art.
Disclosure of Invention
In view of the above, the present invention provides a frequency selective surface unit structure and a surface structure integrating X-band absorption and transmission.
In order to achieve the above purpose, the invention provides the following technical scheme:
a frequency selective surface unit structure of X-band in-band transmission band out-of-band absorption comprises a first medium base layer, a second medium base layer, and an air layer between the first medium base layer and the second medium base layer;
a metal patch is arranged on one side of the first medium base layer close to the second medium base layer;
and a metal patch and a resistor patch are arranged on one side of the second medium base layer, which is far away from the first medium base layer.
The metal patch arranged on the first medium base layer comprises a first square-shaped annular metal patch arranged on the periphery of the first medium base layer and a cross-shaped metal patch arranged on the inner periphery of the first medium base layer.
The metal patch arranged on the second medium base layer comprises a second square ring-shaped metal patch arranged on the periphery of the second medium base layer and a third square ring-shaped metal patch arranged on the inner periphery of the second medium base layer.
Optionally, the resistor patch is welded on the metal patch of the second dielectric substrate.
The resistance patches are welded on four edges of the second square annular metal patch and four edges of the third square annular metal patch.
Optionally, the first dielectric substrate and the second dielectric substrate are both F4B dielectric slabs with a dielectric constant of 2.65, a loss angle of 0.0013, and a thickness of 0.5 mm.
Optionally, the surface element structure has a size of 1/2 corresponding to the wavelength of the operating center frequency.
Optionally, the surface unit structure has a size of 15 mm.
Optionally, the size of the second square ring-shaped metal patch on the periphery of the second dielectric base layer is as follows: width updl is 0.5mm, side length upl is 12.5 mm; the third square annular metal patch on the inner periphery of the second medium base layer has the following dimensions: width updl20.5mm, side length upl2=6mm。
Optionally, the first square annular metal patch at the periphery of the first dielectric base layer has the following dimensions: the width dl is 0.3mm, and the side length l is 14.6 mm; the size of the cross-shaped metal patch on the inner periphery of the first medium base layer is as follows: length l28.6mm, width w2=0.8mm。
A frequency selective surface structure for X-band in-band out-of-band transmission and absorption is constructed using the frequency selective surface unit structure arranged in a periodic rectangular array.
According to the technical scheme, the invention discloses and provides the frequency selective surface unit structure integrating X-band absorption and transmission and the surface structure, and compared with the prior art, the frequency selective surface unit structure has the following beneficial effects:
the invention discloses an X-waveband absorption and transmission integrated in-band transmission band and out-of-band absorption frequency selection surface unit structure and a surface structure formed according to the unit structure.
The invention designs the unit structure size, the patch size, the dielectric layer thickness, the position for loading the patch resistor, the size of the patch resistor and the like by an equivalent circuit method to obtain the optimal unit structure parameters. And the working frequency band of the frequency selection surface structure can be changed by adjusting the size of the unit structure and the size of the patch.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the provided drawings without creative efforts.
FIG. 1 is a schematic diagram of a frequency selective surface unit structure according to the present invention;
FIG. 2 is a general schematic diagram of a frequency selective surface structure according to the present invention;
FIG. 3(a) is a schematic diagram of a first dielectric base layer structure of a frequency selective surface unit structure according to the present invention;
FIG. 3(b) is a schematic diagram of a second dielectric substrate structure of the frequency selective surface unit structure of the present invention;
FIG. 4 is an equivalent circuit diagram of the frequency selective surface unit structure of the present invention;
FIG. 5(a) is a graph of transmission coefficient simulation for a frequency selective surface unit structure of the present invention;
FIG. 5(b) is a graph showing a simulation of the reflection coefficient of the frequency selective surface unit structure of the present invention;
FIG. 6 is an absorption curve diagram of a frequency selective surface unit structure according to the present invention;
wherein, 1 is a first medium base layer, 2 is a second medium base layer, 3 is an air layer, 4 is a first square annular metal patch, 5 is a cross metal patch, 6 is a second square annular metal patch, 7 is a third square annular metal patch, and 8 is a resistance patch; 11 is a first dielectric substrate of a frequency selective surface structure, 12 is an air layer of a frequency selective surface structure, and 13 is a second dielectric substrate of a frequency selective surface structure.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The embodiment of the invention discloses a frequency selective surface unit structure of X-band in-band transmission band out-of-band absorption, which is shown in figure 1 and comprises a first medium base layer 1, a second medium base layer 2 and an air layer 3 between the first medium base layer 1 and the second medium base layer 2;
a metal patch is arranged on one side of the first medium base layer 1 close to the second medium base layer 2;
and a metal patch and a resistor patch 8 are arranged on one side of the second medium base layer 2, which is far away from the first medium base layer 1.
In a specific embodiment, the metal patches arranged on the first dielectric base layer 1, which is described with reference to fig. 3(a), include a first square-ring-shaped metal patch 4 arranged on the periphery of the first dielectric base layer 1 and a cross-shaped metal patch 5 arranged on the inner periphery of the first dielectric base layer 1.
In a specific embodiment, referring to fig. 3(b), the metal patches arranged on the second dielectric base layer 2 include a second square ring-shaped metal patch 6(R1) arranged on the periphery of the second dielectric base layer 2 and a third square ring-shaped metal patch 7(R2) arranged on the inner periphery of the second dielectric base layer 2. The resistance patch 8 is welded on the metal patch of the second medium base layer 2.
An embodiment of the present invention further provides a frequency selective surface structure of an X-band in-band transmission-band out-of-band absorption wave, and referring to fig. 2, the frequency selective surface structure is formed by arranging frequency selective surface unit structures in a periodic rectangular array.
An equivalent circuit model of the frequency selective surface unit structure of the present invention is shown in FIG. 4, Z0Representing wave impedance of free space, ZF1Is a resistive layer, ZF2As a lossless matching layer, Z1Representing the wave impedance of the spacer layer. Transfer matrix from FIG. 4
Figure BDA0003496525350000051
The relation between the input and the output of the cascade network is solved, and then the expression form of the scattering matrix, namely the S parameter, can be solved by utilizing the relation between the transfer matrix and the scattering matrix:
Figure BDA0003496525350000052
wherein the content of the first and second substances,
Figure BDA0003496525350000053
characterizing the relationship of the total input voltage and total input current at port 1 to the total output voltage and total output current at port 2,
Figure BDA0003496525350000054
f is the operating frequency, c is the speed of light in vacuum, εr1Is the relative dielectric constant, h, of the dielectric substrate1Is the air layer thickness.
In order to realize in-band wave-transparent and out-of-band wave-absorbing, f is defined in the embodiment from low frequency to high frequency1、f2And f3At f1And f3Design of ideal index S11=0,S 210, at f2Designed ideal index S11=0,S21=1。S11And S21Respectively, the reflection coefficient of port 1 and the forward transmission coefficient of port 1 to port 2.
Transforming the transition matrix to obtain S11And S21
Figure BDA0003496525350000055
Figure BDA0003496525350000056
Wherein M ═ ZF1ZF2,N=ZF1+ZF2,T=ZF1-ZF2,
Figure BDA0003496525350000057
And
Figure BDA0003496525350000058
the middle dielectric layer is air, then Z1=Z0Q is 0, according to the ideal target of design f1And f3At frequency S21When the value is 0, then ZF1ZF20, if ZF1Equal to 0, equivalent to a metal surface, total reflection will occur, so Z F20. Due to ZF1For complex impedance, Z isF1Substitution of R + jX into S11Expression of, by S11Available as 0:
Figure BDA0003496525350000061
is simple and easy to obtain
Figure BDA0003496525350000062
At f2Is according to S 211, to S21Calculating to obtain:
Figure BDA0003496525350000063
when Z isF1ZF2→ infinity, denominator modulus | cos θ1+jsinθ 11, thus S 211. The out-of-band wave absorbing structure can be equivalent to an open-circuit structure, so that the in-band wave transmission can be realized as long as the upper layer and the lower layer are in a band-pass structure.
The frequency selective surface structure of the in-band transparent out-of-band absorption wave should meet the following conditions:
1、Z1=Z0the two square ring-shaped metal patches of the second medium base layer 2 and the square ring-shaped metal patches and the cross-shaped metal patches 5 of the first medium base layer 1 are separated by an air layer 3;
2、Z F20, namely, the frequency selection surface of the first square ring-shaped metal patch 4 and the cross-shaped metal patch 5 of the first dielectric substrate 1 needs to be f1And f3Generating resonance;
3. the two square ring-shaped metal patches of the second medium base layer 2 need to be loaded with patch resistors to form the characteristic of out-of-band wave absorption.
Through the optimized design of the frequency selective surface structure, the final size is obtained: the size of the frequency selective surface unit structure is 15mm, and is about 1/2 of the wavelength corresponding to the central frequency; the size of the second square ring-shaped metal patch 6 on the periphery of the second medium base layer 2 is as follows: width updl is 0.5mm, side length upl is 12.5 mm; the third square annular metal patch 7 on the inner periphery of the second medium base layer 2 has the following dimensions: width updl20.5mm, side length upl26 mm; peripheral to the first dielectric substrate 1The dimensions of the first square ring-shaped metal patch 4 are: the width dl is 0.3mm, and the side length l is 14.6 mm; the size of the cross-shaped metal patch 5 enclosed in the first medium base layer 1 is as follows: length l28.6mm, width w2=0.8mm。
In a specific embodiment, the first dielectric substrate 1 and the second dielectric substrate 2 are both F4B dielectric boards with a dielectric constant of 2.65, a loss angle of 0.0013, and a thickness of 0.5 mm.
As shown in FIGS. 5(a) -5 (b), the bandwidth of greater than 3dB of the transmission band is 7.094GHz-13.502GHz within the frequency band (2GHz-18GHz) of the designed cell.
The formula a-1-S is calculated from the absorption rate11|2-|S21|2As shown in fig. 6, the maximum absorption rate in the low frequency band can reach 94.08%, and the maximum absorption rate in the high frequency band can reach 94.46%.
The embodiments in the present description are described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments are referred to each other.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims (9)

1. A frequency selective surface unit structure of X-band in-band transmission band out-of-band absorption is characterized by comprising a first medium base layer (1), a second medium base layer (2), and an air layer (3) between the first medium base layer (1) and the second medium base layer (2);
a metal patch is arranged on one side, close to the second medium base layer (2), of the first medium base layer (1);
a metal patch and a resistor patch (8) are arranged on one side of the second medium base layer (2) far away from the first medium base layer (1);
the metal patches arranged on the first medium base layer (1) comprise a first square annular metal patch (4) arranged on the periphery of the first medium base layer (1) and a cross metal patch (5) arranged on the inner periphery of the first medium base layer (1);
the metal patch arranged on the second medium base layer (2) comprises a second square ring-shaped metal patch (6) arranged on the periphery of the second medium base layer (2) and a third square ring-shaped metal patch (7) arranged on the inner periphery of the second medium base layer (2).
2. The structure of a frequency selective surface unit of an X-band in-transmission-band out-of-absorption according to claim 1, characterized in that the resistive patches (8) are soldered to metal patches of the second dielectric substrate (2).
3. The structure of a frequency selective surface unit of an X-band in-band transmission-band out-of-band absorption according to claim 2, wherein the resistive patches (8) are welded on four sides of the second square ring-shaped metal patch (6) and four sides of the third square ring-shaped metal patch (7).
4. The frequency selective surface unit structure of the X-band in-band transparent out-of-band absorption according to claim 1, wherein the first dielectric substrate (1) and the second dielectric substrate (2) are both F4B dielectric plates with dielectric constant of 2.65, loss angle of 0.0013 and thickness of 0.5 mm.
5. The structure of a frequency selective surface element of an X-band in-transmission-band out-of-absorption according to claim 1, wherein the size of said surface element structure is 1/2 of the wavelength corresponding to the center frequency of operation.
6. The structure of frequency selective surface elements of an X-band in-band transmission-out-of-band acoustic wave according to claim 1, wherein the size of said structure of surface elements is 15 mm.
7. The structure of a frequency selective surface unit of an X-band in-band transparent out-of-band acoustic wave according to claim 1, wherein the dimensions of the second square ring type metal patch (6) are: width updl is 0.5mm, side length upl is 12.5 mm; the third square ring-shaped metal patch (7) has the following dimensions: width updl20.5mm, side length upl2=6mm。
8. The frequency selective surface unit structure for the in-band, transparent out-of-band absorption of the X-band according to claim 1, characterized in that the dimensions of the first square ring shaped metal patch (4) are: the width dl is 0.3mm, and the side length l is 14.6 mm; the size of the cross-shaped metal patch (5) on the inner periphery of the first medium base layer (1) is as follows: length l28.6mm, width w2=0.8mm。
9. A frequency selective surface structure of an X-band in-band transmission-band out-of-band absorption, characterized by being constructed using the frequency selective surface unit structure of any one of claims 1 to 8 arranged in a periodic rectangular array.
CN202210120202.4A 2022-02-07 2022-02-07 X-waveband absorption and transmission integrated frequency selection surface unit structure and surface structure Pending CN114421174A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114614266A (en) * 2022-05-11 2022-06-10 成都飞机工业(集团)有限责任公司 X-band-pass absorption and transmission integrated frequency selective surface structure
CN115173056A (en) * 2022-05-20 2022-10-11 电子科技大学 Low RCS broadband antenna housing based on antenna reciprocity principle

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114614266A (en) * 2022-05-11 2022-06-10 成都飞机工业(集团)有限责任公司 X-band-pass absorption and transmission integrated frequency selective surface structure
CN114614266B (en) * 2022-05-11 2022-08-12 成都飞机工业(集团)有限责任公司 X-band-pass absorption and penetration integrated frequency selective surface structure
CN115173056A (en) * 2022-05-20 2022-10-11 电子科技大学 Low RCS broadband antenna housing based on antenna reciprocity principle
CN115173056B (en) * 2022-05-20 2023-08-08 电子科技大学 Low RCS broadband radome based on antenna reciprocity principle

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