CN207250729U - Double-side-frequency broadband wave absorber with controllable pass band - Google Patents
Double-side-frequency broadband wave absorber with controllable pass band Download PDFInfo
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- CN207250729U CN207250729U CN201721254692.8U CN201721254692U CN207250729U CN 207250729 U CN207250729 U CN 207250729U CN 201721254692 U CN201721254692 U CN 201721254692U CN 207250729 U CN207250729 U CN 207250729U
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Abstract
To stealthy and the electromagnetic compatibility problem under the complicated electromagnetic environment, this practicality provides a controllable bilateral broadband wave absorber of passband. The wave absorber is composed of a plurality of periodic unit structures arranged in an array; the periodic unit structure comprises an electric control switch screen, a periodic impedance layer and a foam layer, wherein the periodic impedance layer and the electric control switch screen are respectively arranged on the upper side and the lower side of the foam layer, and the foam layer is supported between the electric control switch screen and the periodic impedance layer to separate the electric control switch screen from the periodic impedance layer. This practicality is through the operating condition of the feed network control diode at the automatically controlled switch screen back to change the structure of automatically controlled switch screen, realize the switching between band-pass and the total reflection. This practicality can realize surveying and interference signal absorption to the operating band both sides to transmission window in the operating band carries out automatically controlled, makes it open the window under normal environment and does not influence signal receiving and dispatching, and closes the window in complicated electromagnetic environment.
Description
Technical field
It the utility model is related to electromagnetism stealth and electromagnetic protection technical field, and in particular to a kind of controllable bilateral frequency of passband
Broadband wave-absorber, is mainly used for mono-/bis-station Radar Cross Section (RCS) reduction and the communication system in complex electromagnetic environment
Front end anti-interference and protection.
Background technology
Radar is by advantages such as its round-the-clock, round-the-clock, strong antijamming capability and detection accuracy height, in modern war
Critical positions are occupied in detecting devices.Effectively avoid enemy radar detection, reduce the standard that enemy obtains our military target information
True property and integrality, lift the penetration ability of the targets of military importance such as our bomber, fighter plane, are to ensure that we is every
The premise that military mission can smoothly complete is stealthy and strong electromagnetic protection is for ensureing Informationization Equipment in complex electromagnetic environment
Survival ability it is most important, advanced stealth technology can shorten enemy and find our target (such as fighter plane, bomber)
Distance, reduce the pre-warning time of enemy, improve our success in military operation probability.But more base Radar Technology, high frequency over the horizon
The appearance of Radar Technology and space based radar technology, serious challenge is brought to stealth technology.
With the variation of electronic equipment, generalize, electromagnetic environment becomes increasingly, how to tackle the interference in working band
Signal and high radiation field become an important topic.High radiation field covering frequency band is wide, and fast response time, has concurrently soft
Hard killing ability, great threat is caused to electronic communication.
The RCS reductions of antenna be always the stealthy difficulties of target, it is necessary to by select reasonable material and design it is special
Structure achievees the purpose that detectable signal outside absorption or reflecting antenna working band and reduces Antenna/RCS, while does not influence
The normal transmitting-receiving of signal in antenna operating band.As modern electronic equipment is using increasing, electromagnetic environment becomes to become increasingly complex,
In this case, the interference signal in working band or strong electromagnetic radiation can disturb electronic equipment, in addition cause it is irreversible
Damage.
Existing stealthy and guard technology has two kinds, first, the spatial surface of design given configuration structure；Second, inhale ripple material
Material.Frequency-selective surfaces energy reflecting out-ofband signals, but it is extremely limited for bistatic sounding radar, its shadow body effect.Wave-absorber
Structure can effectively reduce the Radar Cross Section of mono-/bis-radar detection, but broadband wave-absorber inhales ripple for passband side, and double
The wide design difficulty of suction wavestrip of side wave-absorber is big, and bandwidth is extremely limited.
In addition, the passband of above two method design is fixed, while reserving a communication window to target, also to strong
EMP attack N leaves a coupling channel, can not tackle interference signal and high radiation field in working band, forceful electric power magnetic energy
Amount can enter inside equipment along the passage, damage Informationization Equipment.
Utility model content
For the stealthy and electromagnetic compatibility problem under complex electromagnetic environment, the utility model proposes a kind of passband is controllable
Bilateral bandwidth band wave-absorber.It can realize the detection and interference signal absorption to working band both sides, and in working band
Transmission window progress is automatically controlled, and it is opened window in normal circumstances does not influence signal transmitting and receiving, and is closed in complex electromagnetic environment
Close window.
The controllable bilateral bandwidth band wave-absorber of a kind of passband, it is characterised in that wave-absorber is by multiple weeks being arranged in array
Phase property cellular construction forms；Periodic cells structure includes electric-controlled switch screen, cycle impedance layer and froth bed, cycle impedance
Layer, electric-controlled switch screen are separately positioned on the upper and lower sides of froth bed, and the froth bed is supported on electric-controlled switch screen and cycle impedance layer
Between both are separated.
The electric-controlled switch screen includes medium substrate, and the upper surface of the medium substrate is covered with the metal gate of sphere of movements for the elephants type
Grid network, is covered with metal patch, the metal patch on the medium substrate in each grid of the metal grate network
Be arranged between the centre of each grid and the edge of metal patch and grid network and remain with spacing, each metal patch with
Multiple evenly arranged diodes of identical quantity are respectively connected between grid network, the integral multiple that the quantity of diode is 4 is a.
The lower surface of the medium substrate is provided with the transmission network of " well " font of control upper surface diode operation state
Connection medium substrate following table is offered on the medium substrate of network, the center of each metal patch and its center position correspondence
The conductive through hole of face feeding network, the metal patch of medium substrate upper surface is with the feeding network of medium substrate lower surface by leading
Electric through-hole, which is realized, to be electrically connected, and feeding network connects cathode, and grid network connects anode, will form electrical potential difference at diode both ends, from
And control the on off operating mode of diode.
The cycle impedance layer includes impedance layer medium substrate, and impedance layer metal patch is provided with impedance layer medium substrate
And Chip-R, Chip-R is loaded with the impedance layer metal patch.
When diode on electric-controlled switch screen described in the utility model does not turn on, the metal patch of medium substrate upper surface with
And grid network and the feeding network of medium substrate lower surface form resonance, electric-controlled switch screen forms one in working band and leads to
Band, and out of band signal is reflected；After diode current flow on electric-controlled switch screen, the metal patch of medium substrate upper surface with
Grid network produces electrical connection, the metal patch and grid network of medium substrate upper surface and the feed of medium substrate lower surface
The resonance structure of network is destroyed, and resonance frequency point disappears, and passband is closed, Whole frequency band reflection.
The spacing between metal patch and grid network on electric-controlled switch screen described in the utility model is equal；Adjacent gold
The spacing belonged between patch is equal, and the size shape of all metal patches is identical, the diode connected on each metal patch
Position and quantity it is identical；The electric-controlled switch screen and the metal patch of upper setting, diode, metal grate and
Feeding network is structure symmetrical and symmetrical above and below.
Impedance layer metal patch described in the utility model include be positioned close to impedance layer medium substrate edge one circle with
The identical endless metal patch of impedance layer medium substrate shape and it is arranged among impedance layer medium substrate while also in annular
Single order Minkowski fractal ring metal patch on the inside of metal patch, the endless metal patch and single order Minkowski
Fractal ring metal patch is loaded with Chip-R.
Electric-controlled switch screen, cycle impedance layer and froth bed described in the utility model are square；The electric-controlled switch screen
On metal patch be square or circular metal patch；Endless metal patch on the cycle impedance layer is side's annular gold
Belong to patch or circular ring metal patch.
Endless metal patch and single order Minkowski fractal ring metal patch described in the utility model loads promising
Multiple Chip-Rs, the multiple Chip-R are respectively arranged on the position of CURRENT DISTRIBUTION maximum when wave-absorber absorbs resonant frequency
Put.That is the loading position of Chip-R is resonant frequency when carrying out wave radiation, is produced on its impedance layer metal patch of cycle impedance layer 2
The position of raw sensing electric current maximum.
In the utility model：Load the resistance value of multiple Chip-Rs on single order Minkowski fractal ring metal patch
Model is identical；The resistance value model for loading multiple Chip-Rs on endless metal patch is identical.Chip-R
Resistance is determined by bilateral bandwidth band wave-absorber input impedance real part, is realized the impedance matching with free space, is reached full suction
Receive.
Cycle impedance layer described in the utility model includes impedance layer metal patch and the patch set on impedance layer medium substrate
The overall structure all symmetrical and symmetrical above and below of sheet resistance.
Froth bed described in the utility model is polymethacrylimide foam layer.
The thickness of froth bed described in the utility model is the quarter-wave odd-multiple of wave-absorber resonance frequency point.
The advantageous effects of the utility model are：
1) passband is switchable controllable, and the working status of diode is controlled by the feeding network at the electric-controlled switch screen back side, from
And change the structure of electric-controlled switch screen, realize the switching between band logical and total reflection.
2) ripple is inhaled in double-side band broadband, and the research of current wave-absorber concentrates on unilateral frequency and inhales ripple, inhales wavestrip and be subject to compared with the day of one's doom
System.
3) by designing interlamellar spacing h i.e. PMI foams layer thickness, patch impedance value is selected, realizes surface matching, it is wide to inhale wavestrip
Wider, absorptivity is high, and pass band insertion loss is small.
Brief description of the drawings
Fig. 1 is the structure diagram of the periodic cells structure of a specific embodiment provided by the utility model
Fig. 2 is the structure diagram of the electric-controlled switch screen of a specific embodiment provided by the utility model
Fig. 3 is the structure diagram of the cycle impedance layer unit of a specific embodiment provided by the utility model
Fig. 4 is the simulation result figure of specific embodiment provided by the utility model
In figure：1st, electric-controlled switch screen；101st, square medium substrate；102nd, metal grate network；103rd, square metal patch；
104th, diode；105th, feeding network；106th, conductive through hole；
2nd, cycle impedance layer；201st, anti-layer medium substrate；202nd, Chip-R；203rd, square endless metal patch；204th, one
Rank Minkowski fractal ring metal patch；
3rd, froth bed.
Embodiment
It is with reference to the accompanying drawings and embodiments, right in order to which the technical solution of the utility model and advantage is more clearly understood
The utility model is further elaborated.It should be appreciated that specific embodiment described herein is only used for explaining this practicality
It is new, it is not used to limit the utility model.
The utility model embodiment proposes a kind of controllable bilateral bandwidth band wave-absorber of passband.The wave-absorber formula is by multiple
The periodic cells structure composition being arranged in array.With reference to Fig. 1, for the periodicity of a specific embodiment provided by the utility model
The structure diagram of cellular construction, wherein k are incoming wave incident direction.Periodic cells structure includes electric-controlled switch screen 1, the cycle is hindered
Anti- layer 2 and Polymethacrylimide (PMI) froth bed 3.Cycle impedance layer 2, electric-controlled switch screen 1 are separately positioned on froth bed
3 upper and lower sides, the froth bed 3 are supported between electric-controlled switch screen 1 and cycle impedance layer 2 and separate both.Cycle impedance
The thickness of layer 2 is h1, the thickness of electric-controlled switch screen 1 is h2, the thickness of froth bed 3 is h.
The utility model electric-controlled switch screen 1 its each parameter, diode location and quantity are set according to system operating band
Meter.With reference to Fig. 2, Fig. 2 is the structure diagram of the electric-controlled switch screen of a specific embodiment provided by the utility model.In this reality
Apply in example, by taking working frequency points are in 8.2GHz as an example, electric-controlled switch screen 1 includes square medium substrate 101, square medium substrate 101
Select Rogers 4350.With reference to Fig. 2 (a), the metal grate of sphere of movements for the elephants type is covered with the upper surface of square medium substrate 101
Network 102.The metal grate network 102 of sphere of movements for the elephants type axisymmetricly structure (symmetrical above and below and symmetrical).Sphere of movements for the elephants type
Metal grate network 102 includes four sizes, the identical square grid of shape, and the length of side on each side of square grid is l6。
The square metal patch 103 of a comparable size is covered with medium substrate in each square grid.Square metal patch 103
The medium position being arranged in square grid, the central point of square metal patch 103 are overlapped with the central point of square grid.Side
The spacing of shape metal patch 103 each side to the inner edge of square grid corresponding thereto is equal, which is equal to (l6-l7)/2.Side
The length of side of shape metal patch 103 is l7, equal spacing between adjacent prismatic grid is w2。
Point midway on 103 each side of square metal patch is welded with a foot of a diode 104, and diode 1-4's is another
One foot is welded on metal grate network 102.Four are respectively connected between so each square metal patch 103 and grid network
Diode 104.Diode selects BAP5102 in the present embodiment, its fast response time, it is small to encapsulate capacitance.
With reference to Fig. 2 (b), the lower surface of square medium substrate 101 is provided with control 104 working status of upper surface diode
The feeding network 105 of " well " font.The feeding network 105 of " well " font axisymmetricly structure (symmetrical above and below and symmetrical),
It includes the feed metal piece of the feed metal piece of two cross direction profiles and two genesis analysis, the feed gold of two cross direction profiles
The feed metal piece for belonging to piece and two genesis analysis is distributed in " well " font.Between between the feed metal piece of two cross direction profiles
Away from for,8, the spacing between the feed metal piece of two genesis analysis is also,8, the feed metal piece and genesis analysis of cross direction profiles
Feed metal piece length it is identical be square medium substrate 101 the length of side be family.The feed metal piece of cross direction profiles and vertical
It is of same size to the feed metal piece of distribution as w3.The center and its center of each square metal patch 103
The conductive through hole of connection square medium substrate lower surface feeding network 105 is offered in corresponding square medium substrate 101
106.The feedback of four cross direction profiles in the feeding network 105 of four corresponding square medium substrate lower surfaces of the distribution of conductive through hole 106
The position for the intersection point that the feed metal piece of electric metal piece and genesis analysis intersects.
The square metal patch 103 of 101 upper surface of square medium substrate and the feeding network of square medium substrate lower surface
105 realize electrical connection by conductive through hole 106, and feeding network 105 connects cathode, and metal grate network 102 connects anode, will be two
104 both ends of pole pipe form electrical potential difference, so as to control the on off operating mode of diode 104.
When diode 104 on the electric-controlled switch screen 1 does not turn on, the square metal of 101 upper surface of square medium substrate
Patch 103 and metal grate network 102 and the feeding network 105 of 101 lower surface of square medium substrate form resonance structure, electricity
Control switchboard 1 and form a passband in working band, and out of band signal is reflected；Diode 104 on electric-controlled switch screen 1
After conducting, the square metal patch 103 of 101 upper surface of square medium substrate is produced with metal grate network 102 to be electrically connected, square
The square metal patch 103 and metal grate network 102 of 101 upper surface of medium substrate and 101 lower surface of square medium substrate
The resonance structure of feeding network 105 be destroyed, resonance frequency point disappears, and passband is closed, Whole frequency band reflection.
With reference to Fig. 3, Fig. 3 is the structural representation of the cycle impedance layer unit of a specific embodiment provided by the utility model
Figure.Cycle impedance layer 2 includes square impedance layer medium substrate 201 in the present embodiment, is provided with impedance layer medium substrate 201
Impedance layer metal patch and Chip-R 202.The present embodiment middle impedance layer metal patch includes being positioned close to impedance layer medium
The one of 201 edge of substrate encloses the square endless metal patch 203 identical with 201 shape of impedance layer medium substrate and is arranged on impedance
At the same time also in the single order Minkowski fractal ring metal patch of the square inner side of endless metal patch 203 among layer medium substrate 201
204, side's endless metal patch 203 and single order Minkowski the fractal ring metal patch 204 is loaded with Chip-R
202.The endless metal paster structure (endless metal patch in the side's of being in the present embodiment) that multifrequency resonance is produced by designing is realized
The both sides of passband, which produce, absorbs resonance, lossless resonance is formed at the passband of electric-controlled switch screen, then by loading Chip-R
Achieve the purpose that impedance matching and incoming wave energy dissipation.All Chip-Rs in the utility model are respectively arranged on wave-absorber
The position of CURRENT DISTRIBUTION maximum when absorbing resonant frequency.That is the loading position of Chip-R is resonant frequency when carrying out wave radiation,
The position of sensing electric current maximum is produced on its impedance layer metal patch of cycle impedance layer 2.
Single order Minkowski fractal ring metal patch 204 be arranged on impedance layer medium substrate 201 center (namely
Center inside square endless metal patch 203).Square endless metal patch 203 is side's annular, its length of side is 11.Side's annular
Same position in every metal edges of metal patch 203 is loaded with two Chip-Rs 202, two patches in every metal edges
Spacing equal as 15 between sheet resistance 202.In the present embodiment, two in every metal edges of endless metal patch 203
Chip-R 202 is arranged at the centre position of metal edges.The model of 8 Chip-Rs 202 on square endless metal patch 203
Parameter is identical, its resistance value is Rin.8 models are again loaded with single order Minkowski fractal ring metal patch 204
The identical Chip-R 202 of parameter, its resistance value are Rout.
In the present embodiment, by taking passband is in 8.1GHz as an example, cycle impedance layer is selected in impedance layer medium substrate 201
FR4, inner side are single order Minkowski fractal ring metal patch, and the square endless metal patch 203 that outside forms for copper etching is real
Show the double frequency-band in 8.2GHz both sides and inhale ripple.By the position loading resistor of the CURRENT DISTRIBUTION maximum when absorbing resonant frequency,
Reach good wave-absorbing effect.
Cycle impedance layer includes the impedance layer metal patch set on impedance layer medium substrate and patch electricity in the present embodiment
The overall structure all symmetrical and symmetrical above and below of resistance, as shown in Figure 3.
Inhaling at wave frequency band, switching automatically controlled screen and serve as ground connection reflecting surface, may be considered from the perspective of transmission line short
Road.The relative dielectric constant of PMI foams is approached with magnetic conductivity and air, therefore its thickness can be preferably to inhale wave resonance frequency point
Quarter-wave odd-multiple.If selecting depth of foam improper, wave-absorbing effect can be greatly reduced and increase passband
Insertion loss so that open circuit point is converted into by short dot at impedance surface location.It is chosen so that surface equiva lent impedance reaches
With the Chip-R resistance value of air layer impedance matching, so that the Transflective of total levels off to zero, perfect inhale is realized
Ripple.
In the present embodiment：P=20mm；l1=17.5mm, l2=9.6mm, l3=4.55mm, l4=3.3mm, l5=3.8mm,
l6=7.5mm, l7=5.9mm, l8=9.15mm, w1=0.5mm, w2=2.5mm, w3=0.85mm, h=18.5mm, h1=
0.5mm, h2=0.5mm, Rin=75 Ω, Rout=120 Ω.Each parameter meaning has marked in Fig. 1, Fig. 2 and Fig. 3, different
Parameter chooses the change that can cause wave-absorber working frequency.
The bilateral bandwidth band wave-absorber controllable to a kind of passband of above-described embodiment offer passes through computer simulation software CST
Emulated, simulation result is as indicated at 4.Fig. 4 (a) is simulation result figure when diode is closed, and Fig. 4 (b) opens for diode
When simulation result figure.
As shown in figure 4, when diode is closed, the passband that an Insertion Loss is less than 1dB is generated at 8.2GHz.In passband two
Respectively there is a suction wavestrip in side, and in the range of 1.3-6GHz and 10-12.5GHz, S11 and S21 is respectively less than -10dB, suction ripple at this time
Rate is more than 90%.After diode is opened, passband disappears, and becomes a reflection band, and inhales wavestrip and be basically unchanged, and maintains 1.3-
6GHz and 9.8-12.4GHz.Since the structure of design has symmetry, TE polarization obtains simulation result one with TM polarization incoming waves
Cause.
In conclusion although the utility model has been disclosed with preferred embodiment as above, so it is not limited to this practicality
It is new, any those of ordinary skill in the art, without departing from the spirit and scope of the utility model, when can make it is various change with
Retouching, therefore the scope of protection of the utility model is subject to the scope defined depending on claims.
Claims (10)
1. the controllable bilateral bandwidth band wave-absorber of a kind of passband, it is characterised in that wave-absorber is by multiple cycles being arranged in array
Property cellular construction composition；Periodic cells structure includes electric-controlled switch screen, cycle impedance layer and froth bed, electric-controlled switch screen,
Cycle impedance layer is separately positioned on the upper and lower sides of froth bed, and the froth bed is supported between electric-controlled switch screen and cycle impedance layer
Both are separated.
2. the controllable bilateral bandwidth band wave-absorber of passband according to claim 1, it is characterised in that：The electric-controlled switch screen
Including medium substrate, the metal grate network of sphere of movements for the elephants type, the metal grate are covered with the upper surface of the medium substrate
Metal patch is covered with medium substrate in each grid of network, the metal patch is arranged on the centre of each grid
And spacing is remained between the edge and grid network of metal patch, it is respectively connected between each metal patch and grid network
Multiple evenly arranged diodes of identical quantity, the integral multiple that the quantity of diode is 4 are a；
The lower surface of the medium substrate is provided with the feeding network of " well " font of control upper surface diode operation state, respectively
The feedback of connection medium substrate lower surface is offered on the medium substrate of the center of metal patch and its center position correspondence
The conductive through hole of electric network, the metal patch of medium substrate upper surface are logical by conduction with the feeding network of medium substrate lower surface
Hole, which is realized, to be electrically connected, and feeding network connects cathode, and grid network connects anode, electrical potential difference will be formed at diode both ends, so as to control
The on off operating mode of diode processed.
3. the controllable bilateral bandwidth band wave-absorber of passband according to claim 1, it is characterised in that：The cycle impedance layer
Including impedance layer medium substrate, impedance layer metal patch and Chip-R, the impedance layer are provided with impedance layer medium substrate
Chip-R is loaded with metal patch.
4. the controllable bilateral bandwidth band wave-absorber of passband according to claim 1,2 or 3, it is characterised in that：Electric-controlled switch
The spacing between metal patch and grid network on screen is equal；Spacing between adjacent metal patch is equal, all metals
The size shape of patch is identical, and the position of the diode connected on each metal patch and quantity are identical；The electricity
Metal patch, diode, metal grate and the feeding network for controlling switchboard and upper setting are symmetrical and symmetrical above and below
Structure.
5. the controllable bilateral bandwidth band wave-absorber of passband according to claim 4, it is characterised in that：The impedance layer metal
Patch encloses the endless metal identical with impedance layer medium substrate shape including being positioned close to the one of impedance layer medium substrate edge
Patch and it is arranged among impedance layer medium substrate while the also single order Minkowski point shape on the inside of endless metal patch
Ring metal patch, endless metal patch and single order the Minkowski fractal ring metal patch are loaded with Chip-R.
6. the controllable bilateral bandwidth band wave-absorber of passband according to claim 5, it is characterised in that：The electric-controlled switch
Screen, cycle impedance layer and froth bed are square；Metal patch on the electric-controlled switch screen is square or circular gold
Belong to patch；Endless metal patch on the cycle impedance layer is square endless metal patch or circular ring metal patch.
7. the controllable bilateral bandwidth band wave-absorber of passband according to claim 5, it is characterised in that：The endless metal patch
Piece and single order Minkowski fractal ring metal patch load promising multiple Chip-Rs, and the multiple Chip-R is divided equally
It is located at the position of CURRENT DISTRIBUTION maximum when wave-absorber absorbs resonant frequency.
8. the controllable bilateral bandwidth band wave-absorber of passband according to claim 7, it is characterised in that：Loading can in single order Min
The resistance value model of multiple Chip-Rs on Paderewski fractal ring metal patch is identical；Loading is on endless metal patch
The resistance value model of multiple Chip-Rs is identical.
9. the controllable bilateral bandwidth band wave-absorber of passband according to claim 8, it is characterised in that：The cycle impedance layer
It is overall all symmetrical and symmetrical above and below including the impedance layer metal patch set on impedance layer medium substrate and Chip-R
Structure.
10. the controllable bilateral bandwidth band wave-absorber of passband according to claim 1, it is characterised in that：The froth bed
Thickness is the quarter-wave odd-multiple of wave-absorber resonance frequency point.
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| CN110277649A (en) * | 2019-06-27 | 2019-09-24 | 南京理工大学 | Circuit analogous absorber based on micro-meter scale periodic unit |
| CN111029782A (en) * | 2019-12-12 | 2020-04-17 | 电子科技大学 | Wave-transparent window switchable absorbing and penetrating integrated material |
| CN111180895A (en) * | 2020-01-16 | 2020-05-19 | 电子科技大学 | Tunable absorption and permeation integrated material with high selectivity |
| CN112103660A (en) * | 2020-09-17 | 2020-12-18 | 中国人民解放军国防科技大学 | C-band broadband energy selection surface |
| CN113451781A (en) * | 2021-05-28 | 2021-09-28 | 西安电子科技大学 | Microminiaturized 2.5-dimensional absorption and penetration integrated frequency selection wave absorber |
| CN113488778A (en) * | 2021-06-22 | 2021-10-08 | 湖南电磁场科技有限公司 | Transmission wave-absorbing structure with adjustable pass band state |
| CN114614266A (en) * | 2022-05-11 | 2022-06-10 | 成都飞机工业（集团）有限责任公司 | X-band-pass absorption and transmission integrated frequency selective surface structure |
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| CN110277649B (en) * | 2019-06-27 | 2021-09-21 | 南京理工大学 | Circuit simulation absorber based on micron scale periodic unit |
| CN110277649A (en) * | 2019-06-27 | 2019-09-24 | 南京理工大学 | Circuit analogous absorber based on micro-meter scale periodic unit |
| CN111029782A (en) * | 2019-12-12 | 2020-04-17 | 电子科技大学 | Wave-transparent window switchable absorbing and penetrating integrated material |
| CN111180895A (en) * | 2020-01-16 | 2020-05-19 | 电子科技大学 | Tunable absorption and permeation integrated material with high selectivity |
| CN111180895B (en) * | 2020-01-16 | 2021-03-30 | 电子科技大学 | Tunable absorption and permeation integrated material with high selectivity |
| CN112103660B (en) * | 2020-09-17 | 2022-01-21 | 中国人民解放军国防科技大学 | C-band broadband energy selection surface |
| CN112103660A (en) * | 2020-09-17 | 2020-12-18 | 中国人民解放军国防科技大学 | C-band broadband energy selection surface |
| CN113451781A (en) * | 2021-05-28 | 2021-09-28 | 西安电子科技大学 | Microminiaturized 2.5-dimensional absorption and penetration integrated frequency selection wave absorber |
| CN113451781B (en) * | 2021-05-28 | 2022-07-08 | 西安电子科技大学 | Microminiaturized 2.5-dimensional absorption and penetration integrated frequency selection wave absorber |
| CN113488778A (en) * | 2021-06-22 | 2021-10-08 | 湖南电磁场科技有限公司 | Transmission wave-absorbing structure with adjustable pass band state |
| CN113488778B (en) * | 2021-06-22 | 2022-11-11 | 湖南电磁场科技有限公司 | Transmission wave-absorbing structure with adjustable pass band state |
| CN114614266A (en) * | 2022-05-11 | 2022-06-10 | 成都飞机工业（集团）有限责任公司 | X-band-pass absorption and transmission integrated frequency selective surface structure |
| CN114614266B (en) * | 2022-05-11 | 2022-08-12 | 成都飞机工业（集团）有限责任公司 | X-band-pass absorption and penetration integrated frequency selective surface structure |
| CN117748152A (en) * | 2023-12-29 | 2024-03-22 | 江苏赛博空间科学技术有限公司 | 1-bit parallel inductor loading feed wave-absorbing intelligent super surface |
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