CN117748152A - 1-bit parallel inductor loading feed wave-absorbing intelligent super surface - Google Patents
1-bit parallel inductor loading feed wave-absorbing intelligent super surface Download PDFInfo
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- CN117748152A CN117748152A CN202311857853.2A CN202311857853A CN117748152A CN 117748152 A CN117748152 A CN 117748152A CN 202311857853 A CN202311857853 A CN 202311857853A CN 117748152 A CN117748152 A CN 117748152A
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- 229910052751 metal Inorganic materials 0.000 claims abstract description 68
- 239000002184 metal Substances 0.000 claims abstract description 68
- 239000000758 substrate Substances 0.000 claims abstract description 23
- 238000000034 method Methods 0.000 claims abstract description 18
- 239000006260 foam Substances 0.000 claims abstract description 9
- 230000008569 process Effects 0.000 claims abstract description 7
- 239000003292 glue Substances 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 11
- 230000008901 benefit Effects 0.000 claims description 4
- 238000012937 correction Methods 0.000 claims description 3
- 238000013461 design Methods 0.000 abstract description 9
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 230000001502 supplementing effect Effects 0.000 abstract description 3
- 238000010923 batch production Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 64
- 238000010521 absorption reaction Methods 0.000 description 9
- 239000006096 absorbing agent Substances 0.000 description 5
- 238000007747 plating Methods 0.000 description 5
- 239000000919 ceramic Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 239000011358 absorbing material Substances 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 239000012790 adhesive layer Substances 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 241001391944 Commicarpus scandens Species 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- PCEXQRKSUSSDFT-UHFFFAOYSA-N [Mn].[Mo] Chemical compound [Mn].[Mo] PCEXQRKSUSSDFT-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000001093 holography Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000001778 solid-state sintering Methods 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
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Abstract
The invention discloses a 1-bit parallel inductance loading feed wave-absorbing intelligent super surface, which comprises a metal pattern layer, a medium substrate layer, an adhesion shape supplementing layer, a foam layer and a metal grounding plate which are arranged from top to bottom, wherein the metal pattern layer is arranged on the surface of the medium substrate layer through a process and consists of a plurality of metal pattern units which are periodically arranged at equal intervals, the metal pattern units are of an annular structure formed by square and circular assembly, and two PIN diodes are loaded at four end corners of the annular structure; the feed network design of the surface parallel inductance loading metal wire is adopted, the feed network design is more good in capacity and easy to realize, the existing mature production process is adopted, low-cost batch production can be realized, and the independence of units can be effectively maintained.
Description
Technical Field
The invention belongs to the field of artificial electromagnetic super-surfaces, and particularly relates to a 1-bit parallel inductor loading feed wave-absorbing intelligent super-surface.
Background
The electromagnetic environment facing people in daily life is more and more complex, and the electromagnetic environment is more and more important to be controlled or purified by manually controlling the electromagnetic waves.
The super surface is an ultrathin artificial plane structure, which is formed by periodically arranging units with similar structures and functions in a two-dimensional plane, and the regulation and control of parameters such as electromagnetic wave phase, amplitude, frequency and the like can be realized by reasonably designing the arrangement mode of the units. Through proper design, the super surface can realize a plurality of singular functions, such as stealth, holography, superlens and the like, and the super surface has proved to realize effective electromagnetic absorption, and the wave absorbing material and the wave absorbing body have wide application in the fields of wireless communication, radar technology, electromagnetic interference suppression, electromagnetic stealth technology and the like, and by using the wave absorbing material and the wave absorbing body, the performance of an electromagnetic system can be improved, signal interference can be reduced, and the stealth performance of the system can be improved.
The adjustable components are further introduced into the units of the super-surface to form the intelligent super-surface, so that dynamic control of the artificial atomic state inside the super-surface is further realized through digital coding, the traditional super-surface realizes effective electromagnetic absorption and intelligent super-surface, but fresh structures can combine the two, and the reconfigurable intelligent super-surface and the electromagnetic super-surface with the wave absorbing effect are not realized at present.
Disclosure of Invention
The invention provides a 1-bit parallel inductor loading feed wave-absorbing intelligent super-surface, which overcomes the defects of the prior art that the existing intelligent super-surface has no wave-absorbing state, the wave-absorbing super-surface is not reconfigurable, the super-surface series feed, the unit feed is easy to break, the implementation is difficult and the like.
The invention adopts the technical proposal that: the utility model provides a but 1-bit parallel inductance loading feed wave-absorbing intelligence super surface, includes by metal pattern layer, medium substrate layer, bonding benefit shape layer, the foam layer and the metal grounding plate that are arranged from top to bottom, the metal pattern layer is arranged in medium substrate layer surface through the technology, the metal pattern layer comprises a plurality of periodic equidistant metal pattern unit of arranging, the metal pattern unit is the annular structure of being assembled by square and circular, four terminal angles department of annular structure all loads two PIN diodes.
Further, the arrangement period of the metal pattern units is T, and the formula is satisfied:
in the above formula, T is the metal pattern period, er is the material dielectric constant, d is the material thickness, and delta is the correction factor.
Further, the dielectric substrate layer is a high temperature resistant material.
Further, the bonding shape-supplementing layer comprises a first shape-supplementing layer and a second bonding layer, wherein the first shape-supplementing layer is a metal shape-supplementing layer, the metal shape-supplementing layer is clung to one side of the medium substrate layer, the second bonding layer is glue, and the glue is used for covering the metal shape-supplementing layer.
Further, the glue is a prepreg.
Compared with the prior art, the invention has the following beneficial effects:
1. the structure provided by the invention adopts a feed network design of loading metal wires by surface parallel inductors, provides bias excitation for diodes in units, and has the advantages that firstly, the surface parallel feed has higher capacity than the surface serial feed, if one unit in an array surface is damaged by a surface serial feed method, the whole unit is not available, and compared with a perforated bottom unit control feed method, the preparation is easier to realize; and secondly, the design of the feed network of the inductance loading metal wire can effectively keep the independence of the units, and the performance of the wave absorber is basically consistent with that of an unedded feed network. The patch inductance has a self-resonance frequency due to the influence of parasitic capacitance, high-frequency signals around the self-resonance frequency can be blocked by the inductance, the broadband wave absorption is formed by superposition of a plurality of resonance peaks, and the wave absorption bandwidth of a wave absorber added with a pure metal feed network is narrowed.
2. According to the intelligent super-surface structure provided by the invention, eight PIN diodes are loaded, and the eight PIN diodes are controlled by a common switch, so that the eight PIN diodes can provide phase changes of 0 degrees and 180 degrees, and further, the dynamic control of the manual atomic state inside is realized by digital coding.
3. The invention can realize the adjustment of the reflectivity of the resonance peak by changing the external excitation of the PIN diode, and realize a certain wave absorbing effect while realizing the reconfigurable intelligent super surface; therefore, the reconfigurable intelligent super-surface with the functions of adjustable wave absorption/reflection, adjustable resonance peak reflectivity and the like is realized, and meanwhile, the design difficulty and the manufacturing cost of a control circuit are reduced.
Drawings
Fig. 1 is an exploded view of the present invention.
FIG. 2 is a schematic diagram of the combination of the present invention.
FIG. 3 is a schematic diagram of a metal pattern layer according to the present invention.
Fig. 4 is a graph showing the effect of absorbing and reflecting electromagnetic waves in a frequency band according to the present invention.
Fig. 5 is a graph of the phase of the present invention in the full cut-off and full on states within a frequency band.
In the figure: 1. a metal pattern layer; 2. a dielectric substrate layer; 3. bonding the shape supplementing layer; 4. a foam layer; 5. a metal grounding plate; 6. a metal upper layer; 7. a metal lower layer; 8. glue.
Detailed Description
In order to facilitate an understanding of the invention, the device of the invention will be described more fully below with reference to the accompanying drawings. Examples of the apparatus are given in the accompanying drawings. However, the apparatus may be embodied in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
In the description of the present invention, it should be noted that, unless explicitly stated and limited otherwise, the terms "mounted," "connected," and "disposed" are to be construed broadly, and may be fixedly connected, disposed, or detachably connected, disposed, or integrally connected, disposed, for example. The specific meaning of the above terms in the present invention will be understood in specific cases by those of ordinary skill in the art.
Examples
As shown in fig. 1-3, the embodiment provides a 1-bit parallel inductance loading feed wave-absorbing intelligent super surface, which comprises a metal pattern layer 1, a dielectric substrate layer 2, an adhesive shape supplementing layer 3, a foam layer 4 for supporting and a metal grounding plate 5 which are arranged from top to bottom, wherein the foam layer 4 can also be replaced by an air layer according to requirements.
The metal pattern layer 1 is arranged on the surface of the medium substrate layer 2 through a process, if the medium substrate layer 2 is quartz glass, the metal pattern layer 1 is printed on a transparent flexible material such as PET material by adopting a Cumesh process, and then the metal pattern layer 1 is adhered on the surface of the medium substrate layer 2 through an adhesion process;
the adhesive patch layer 3 includes a first patch layer and a second adhesive layer, the first patch layer is a metal patch layer, the metal patch layer is clung to one side of the dielectric substrate layer 2, the second adhesive layer is glue 8, the glue 8 is over the metal patch layer and surrounds the metal patch layer, wherein the glue 8 is a prepreg, such as RO4450F and RO4460G2, RO4003C, RO4350B, RO G2, RO4835 35 4835T, RO4400, RO4450F, RO4450B;
it should be noted that, for example, the dielectric substrate layer 2 is glass fiber, and the metal surface layer may be coated by vacuum coating, vapor deposition, hot dipping, etc.; if the dielectric substrate is ceramic, a plurality of ceramic metallization processes such as a molybdenum-manganese method, a gold plating method, a copper plating method, a tin plating method, a nickel plating method, a LAP method (laser post metal plating) and the like are adopted, a layer of metal film is firmly adhered to the surface of the ceramic to realize the welding between the ceramic and the metal, while the dielectric substrate layer 2 in the embodiment is an SH260 plate, and the metal pattern layer 1 is etched on the surface of the dielectric substrate layer 2 by adopting a conventional lead-free reflow soldering processing process.
The metal pattern layer 1 is formed by a plurality of metal pattern units which are periodically and equally arranged at intervals, the arrangement period of the metal pattern units is T, and the formula is satisfied:
in the formula, T is a metal pattern period, er is a material dielectric constant, d is a material thickness, delta is a correction factor, the range is + -0.1 center frequency point air wavelength, delta is adjusted according to actual conditions such as different material thicknesses, and all parameter units are mm.
The metal pattern unit is an annular structure formed by square and round assembly, two PIN diodes are loaded at four end corners of the annular structure, specifically, the metal pattern layer 1 is split into a metal upper layer 6 and a metal lower layer 7, the metal upper layer 6 comprises a first PIN diode D1, a second PIN diode D2, a third PIN diode D3, a fourth PIN diode D4, a fifth PIN diode D5, a sixth PIN diode D6, a seventh PIN diode D7, an eighth PIN diode D8, a first inductor L1 and a second inductor L2, and the metal upper layer 6 is etched on the surface of the medium substrate layer 2 through a conventional lead-free reflow soldering processing technology;
the metal lower layer 7 comprises a second inductor L3 and a fourth inductor L4, the metal lower layer 7 is embedded in the glue 8 in an embedded mode, the dielectric substrate layer 2 is adhered to the foam layer 4 through the glue 8, and the metal grounding plate 5 can be adhered to the foam layer 4 through a melt solidification method, a solid state sintering method, a metal deposition method and the like.
Through the continuous adjustment of the dimension parameters W1, W2, W3, L1 and R of the metal pattern circuit of the metal pattern layer, the transmission amplitude of the structure under different dimensions is observed, and the dimension of the metal pattern circuit is continuously adjusted, so that the design requirement is met: the center frequency point is 7.20GHz, the design frequency band is 4.23GHz-10.17GHz, the absorption bandwidth is 5.94GHz, the relative bandwidth is 82.5%, wherein the thickness of the dielectric substrate layer 2, the thickness of the glue and the thickness of the foam layer 4 are determined parameters, and are respectively 0.25mm, 0.165mm and 9mm, and then the following verification is carried out:
as shown in FIG. 4, the curve in the figure shows the electromagnetic wave absorption performance of the structure in the full cut-off state and full conduction state, the wave absorption bandwidth in the semi-conduction state is 5.94GHz in the frequency range of 4.23GHz-10.17GHz, and the wave absorption performance is as follows
The wave absorbing device has the advantages that the wave absorbing performance is required, reflection (wave absorbing performance > = -5 dB) is realized by the structure in the full cut-off and full conduction states, the required reflection performance is realized, and the broadband reflection adjustable active super-surface wave absorber is realized by switching the semi-conduction state and the full conduction and full cut-off states.
As shown in fig. 5, the curves in the diagram are phases of the structure in the full-cut state and full-conduction state, and it can be seen that the phase difference between the full-cut state and the full-conduction state is 180 degrees, that is, the phase change of 0 degrees and 180 degrees can be provided by the control of the diode, so that dynamic control of the manual atomic state in the digital code is realized.
The design of the feed network using the surface parallel inductor to load the metal wire is more easy to realize, the existing mature production process can realize low-cost mass production, the independence of units can be effectively maintained, the performance of the wave absorber is basically consistent with that of an ungraded feed network, the self-resonant frequency exists in the chip inductor due to the influence of parasitic capacitance, high-frequency signals around the self-resonant frequency can be blocked by the inductor, and the broadband wave absorber is similar to superposition of a plurality of resonance peaks.
It should be noted that the structure of the present invention may be implemented in many different forms, and is not limited to the embodiments, and any equivalent transformation made by those skilled in the art using the present specification and the accompanying drawings, or direct or indirect application in other related technical fields, such as loading and unloading of other articles, are included in the protection scope of the present invention.
Claims (5)
1. The utility model provides a but 1-bit parallel inductance loading feed wave-absorbing intelligence super surface, includes from top to bottom arranged metal pattern layer, dielectric substrate layer, bonding benefit shape layer, is used for supporting foam layer and metal grounding plate, its characterized in that: the metal pattern layer is arranged on the surface of the dielectric substrate layer through a process, the metal pattern layer is composed of a plurality of metal pattern units which are periodically arranged at equal intervals, the metal pattern units are of an annular structure formed by square and circular assembly, and two PIN diodes are loaded at four end corners of the annular structure.
2. The 1-bit parallel inductance loading feed wave-absorbing intelligent super surface according to claim 1, wherein: the arrangement period of the metal pattern units is T, and the formula is satisfied:
in the above formula, T is the metal pattern period, er is the material dielectric constant, d is the material thickness, and delta is the correction factor.
3. The 1-bit parallel inductance loading feed wave-absorbing intelligent super surface according to claim 1, wherein: the dielectric substrate layer is made of high-temperature resistant materials.
4. The 1-bit parallel inductance loading feed wave-absorbing intelligent super surface according to claim 1, wherein: the bonding shape-supplementing layer comprises a first shape-supplementing layer and a second bonding layer, wherein the first shape-supplementing layer is a metal shape-supplementing layer, the metal shape-supplementing layer is clung to one side of the medium substrate layer, and the second bonding layer is glue which is used for covering the metal shape-supplementing layer and surrounding the metal shape-supplementing layer.
5. The 1-bit parallel inductor loading feed wave-absorbing intelligent super surface according to claim 4, wherein: the glue is prepreg.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN202311857853.2A CN117748152A (en) | 2023-12-29 | 2023-12-29 | 1-bit parallel inductor loading feed wave-absorbing intelligent super surface |
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| CN202311857853.2A CN117748152A (en) | 2023-12-29 | 2023-12-29 | 1-bit parallel inductor loading feed wave-absorbing intelligent super surface |
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| CN117748152A true CN117748152A (en) | 2024-03-22 |
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| CN202311857853.2A Pending CN117748152A (en) | 2023-12-29 | 2023-12-29 | 1-bit parallel inductor loading feed wave-absorbing intelligent super surface |
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