CN113346250A - Millimeter wave three-frequency selection surface based on multilayer coupling structure - Google Patents
Millimeter wave three-frequency selection surface based on multilayer coupling structure Download PDFInfo
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- CN113346250A CN113346250A CN202110690924.9A CN202110690924A CN113346250A CN 113346250 A CN113346250 A CN 113346250A CN 202110690924 A CN202110690924 A CN 202110690924A CN 113346250 A CN113346250 A CN 113346250A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
- H01Q15/0006—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
- H01Q15/0013—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
- H01Q15/0006—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
- H01Q15/0013—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective
- H01Q15/002—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective said selective devices being reconfigurable or tunable, e.g. using switches or diodes
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Abstract
The invention belongs to the field of communication, and particularly relates to a millimeter wave tri-frequency selection surface based on a multilayer coupling structure, which comprises a plurality of frequency selection units which are arranged in a two-dimensional plane to form an array structure, wherein each frequency selection unit comprises a top metal layer, a first high-frequency dielectric substrate, a middle metal layer, a second high-frequency dielectric substrate and a bottom metal layer, the top metal layer, the middle metal layer and the bottom metal layer are metal patterns printed on the first high-frequency dielectric substrate or the second high-frequency dielectric substrate, namely the top metal layer, the middle metal layer and the bottom metal layer are separated by the first high-frequency dielectric substrate and the second high-frequency dielectric substrate, and the millimeter wave tri-frequency selection surface is characterized in that the metal patterns of the top metal layer and the bottom metal layer are in a crossed winding gap structure; the middle metal layer is a square metal ring; the frequency selection surface has the advantages of independent adjustability among frequency bands, stable polarization and incidence angle and the like, has a simple structure, is easy to process and manufacture, and is suitable for the fields of 5G wireless communication and the like.
Description
Technical Field
The invention belongs to the field of communication, relates to the technical field of electromagnetic fields and microwaves, and particularly relates to a millimeter wave tri-frequency selection surface based on a multilayer coupling structure.
Background
The frequency selective surface is similar to a metamaterial, has wide application prospects in the microwave field and the infrared field, is composed of a large number of passive resonance units which are periodically arranged according to a certain arrangement mode, is used as a space filter of electromagnetic waves and optical signals, shows obvious filtering properties of band stop (patch type unit) or band pass (aperture type unit) when interacting with the space electromagnetic waves, is widely researched by relevant scholars in the microwave and antenna fields in recent years, and can be used as an antenna cover to reduce the scattering area (RCS) of a radar, a polarization converter and a stealth material and change the electromagnetic characteristics of buildings. With the rapid development of networks and communication devices, more and more military and civil electromagnetic wave bands are provided, and frequency selection structures with high filtering, high cut-off and high selection characteristics become research hotspots. Foreign research is secretly researched in world war II as early as the last century, and the theory is gradually perfected when the foreign research is used for counterreconnaissance of enemy fighters. The research in China is late since the technology is not mature enough, but the research in the last decade becomes a research hotspot due to the wide application prospect and commercial value of FSS.
With the rapid development of the global internet and mobile communication and the popularization of mobile terminal devices such as smart phones and tablet computers, the demand of data services for network bandwidth increases geometrically, and the amount of transmitted data also increases more and more. The 5G technology operates with extraordinary data processing capabilities to bind unlimited traffic and unlimited data broadcast services in the latest wireless communication systems. The 5G not only uses the traditional low frequency band (Sub 6GHz), but also uses the high frequency domain with richer frequency spectrum resources, i.e. the millimeter wave band. Frequency selective surfaces have been widely studied and applied in the low frequency band (sub 6 GHz). With the continuous development of wireless communication and the increasing abundance of spectrum resources, the application of FSS in high frequency band is very important, especially in millimeter wave frequency band. Electromagnetic shielding, beam forming, multi-band antennas, high gain antennas all do not have the contribution of a frequency selective surface. Miniaturization, polarization stability, incident angle stability and high selectivity are always important indexes for frequency selective surface research, and unlike a common filter, FSS is applied to an infinite space field, and polarization and incident angle of electromagnetic waves have great influence on the FSS, which is also one of research difficulties. Secondly, in the high-frequency band field, the unit size of the frequency selective surface is much smaller than that of the low-frequency band due to the small wavelength, and can reach millimeter level, and a large number of resonant period units form the FSS surface, which puts high requirements on the processing technology.
Complex topologies and multi-layer FSS are difficult to machine and the tolerances are relatively large due to the machining process. Secondly, due to the instability of the millimeter wave frequency band, the FSS shows its sensitive characteristics at large angle of incidence and different angles of polarization.
Disclosure of Invention
The invention provides a millimeter wave tri-frequency selection surface based on a multilayer coupling structure, which comprises a plurality of frequency selection units arranged in a two-dimensional plane to form an array structure, wherein each frequency selection unit comprises a top metal layer 1, a first high-frequency dielectric substrate 2, a middle metal layer 3, a second high-frequency dielectric substrate 4 and a bottom metal layer 5, the top metal layer 1, the middle metal layer 3 and the bottom metal layer 5 are metal patterns printed on the first high-frequency dielectric substrate 2 or the second high-frequency dielectric substrate 4, the top metal layer 1, the middle metal layer 3 and the bottom metal layer 5 are separated by the first high-frequency dielectric substrate 2 and the second high-frequency dielectric substrate 4, and the metal patterns of the top metal layer 1 and the bottom metal layer 5 are in a cross winding gap structure, namely, each arm in the cross rectangular gap forms a winding gap structure through winding treatment; the middle metal layer 3 is a square metal ring.
Furthermore, four edge gaps 6 are respectively arranged on four corner edges of the top metal layer 1 and the bottom metal layer 5, the range of the edge gaps is 0.1mm-0.15mm, and each edge gap 6 is spaced from the dipole aperture by a distance of 0.05mm-0.15 mm.
Further, the cross-serpentine slot structure includes four 90-degree rotationally symmetric slots, each slot having a width g1, extending outward from a point of rotational symmetry perpendicular to one edge of one of the metal layers, which segment is designated w 4; at the other end of w4, extending in a direction perpendicular to w4, the segment of extension is denoted as w 3; at the other end of w3, extending in a direction perpendicular to w3 and in the same direction of extension as w4, the segment of extension is denoted as w 2; at the other end of w2, extending in a direction perpendicular to w2 and opposite to the direction in which w3 extends, this segment of extension is denoted as w 1; at the other end of w1, extending in the same direction perpendicular to w1 and as w4, this segment of extension is denoted g 4; at the other end of g4, extending in the same direction perpendicular to g4 and as w3, this segment of extension is denoted g 3; at the other end of g3, extending in the same direction perpendicular to g3 and as w4, this segment of extension is denoted g 2. The total slot length is related to the resonant frequency, and each slot length is optimized to obtain a target frequency response.
Further, the adhesion between the first high-frequency dielectric substrate 2 and the intermediate metal layer 3 is performed by the prepreg 7.
Compared with the prior art, the invention has the beneficial effects that:
1. the millimeter wave three-frequency selection surface based on the multilayer coupling structure achieves three-frequency selection performance through integral structure coupling; the invention can ensure that the signal of the corresponding frequency band link is not interfered by other frequencies, namely, the invention adopts the rectangular gaps at four sides, increases the structural equivalent coupling capacitance, reduces the transmission coefficient between frequency bands to be below-20 dB, effectively increases the out-of-band isolation and ensures that the out-of-band isolation is not interfered by other frequency bands.
2. The middle square metal ring x in the millimeter wave three-frequency selection surface based on the multilayer coupling structure can realize independent adjustment of high-frequency bands, realize different frequency ratios and expand the application range.
3. The millimeter wave three-frequency selection surface based on the multilayer coupling structure, namely a completely symmetrical structure, has extremely strong polarization stability.
4. The millimeter wave three-frequency selection surface based on the multilayer coupling structure has ultrahigh angle stability due to the compact structure and the ultra-small size, and the resonance frequency is always kept unchanged at 0-60 degrees.
5. The millimeter wave three-frequency selection surface based on the multilayer coupling structure has the characteristics of small size, low profile and easiness in processing.
Drawings
FIG. 1 is a 3D schematic diagram of a millimeter wave tri-frequency selective surface periodic unit structure based on a multi-layer coupling structure according to the present invention;
FIG. 2 is a structural diagram of each layer of unit of a millimeter wave three-frequency selective surface based on a multilayer coupling structure;
fig. 3 is an equivalent circuit model of a millimeter wave tri-band frequency selective surface based on a multi-layer coupling structure.
FIG. 4 is a diagram showing the evolution of the millimeter wave tri-band frequency selective surface rectangular gap structure based on the multi-layer coupling structure;
FIG. 5 is a side view of a millimeter wave tri-band frequency selective surface based on a multi-layer coupling structure according to the present invention;
FIG. 6 is S parameter obtained from millimeter wave three-frequency selective surface full-wave simulation and equivalent circuit model based on multilayer coupling structure according to the present invention;
FIG. 7 is an incident angle stability simulation diagram of a millimeter wave tri-band frequency selective surface based on a multi-layer coupling structure in a TE polarization mode according to the present invention;
FIG. 8 is an incident angle stability simulation diagram of the millimeter wave tri-band frequency selective surface based on the multilayer coupling structure in the TM polarization mode according to the present invention;
FIG. 9 is a simulation diagram of the perimeter parameter of the square ring of the middle coupling layer of the millimeter wave tri-frequency selective surface based on the multi-layer coupling structure according to the present invention;
FIG. 10 is a diagram for measuring the transmission coefficient of a millimeter wave tri-frequency selective surface based on a multi-layer coupling structure under TE waves according to the present invention;
fig. 11 is a transmission coefficient measurement diagram of the millimeter wave tri-frequency selective surface based on the multilayer coupling structure under the TM wave.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The invention provides a millimeter wave tri-frequency selection surface based on a multilayer coupling structure, which comprises a plurality of frequency selection units which are arranged in a two-dimensional plane to form an array structure, wherein each frequency selection unit comprises a top metal layer 1, a first high-frequency dielectric substrate 2, a middle metal layer 3, a second high-frequency dielectric substrate 4 and a bottom metal layer 5, the top metal layer 1, the middle metal layer 3 and the bottom metal layer 5 are metal patterns printed on the first high-frequency dielectric substrate 2 or the second high-frequency dielectric substrate 4, namely, the top metal layer 1, the middle metal layer 3 and the bottom metal layer 5 are separated by the first high-frequency dielectric substrate 2 and the second high-frequency dielectric substrate 4, the method is characterized in that the metal patterns of the top metal layer 1 and the bottom metal layer 5 are of a crossed meandering gap structure, namely, each arm in a crossed rectangular gap forms a meandering gap structure through meandering treatment; the middle metal layer 3 is a square metal ring.
The crossed rectangular slot is a conventional metal layer structure, the configuration of which is shown in the left side graph of fig. 4, and each arm of the conventional crossed rectangular slot is bent to form the crossed meandering slot structure in the invention, wherein, for each slot, a gradual change process exists, as shown in fig. 2, the widths of the slots at two sides of each vertical corner are respectively represented by g5, g6 and g7, and the ranges are respectively 1.9mm-2mm, 1.4mm-1.5mm and 1.2mm-1.4 mm; the design is favorable for enhancing the interlayer coupling effect. The structure includes four 90 degree rotationally symmetric slots extending outwardly from a point of rotational symmetry perpendicular to one edge of one of the metal layers, the segment designated w 4; at the other end of w4, extending in a direction perpendicular to w4, the segment of extension is denoted as w 3; at the other end of w3, extending in a direction perpendicular to w3 and in the same direction of extension as w4, the segment of extension is denoted as w 2; at the other end of w2, extending in a direction perpendicular to w2 and opposite to the direction in which w3 extends, this segment of extension is denoted as w 1; at the other end of w1, extending in the same direction perpendicular to w1 and as w4, this segment of extension is denoted g 4; at the other end of g4, extending in the same direction perpendicular to g4 and as w3, this segment of extension is denoted g 3; at the other end of g3, extending in the same direction perpendicular to g3 and as w4, this segment of extension is denoted g 2. The total slot length is related to the resonant frequency, and each slot length is optimized to obtain a target frequency response.
The frequency selective surface comprises a plurality of periodically arranged unit resonant elements and is composed of two dielectric plates, a top metal layer, a bottom metal layer and a middle metal layer, wherein the top metal layer, the middle metal layer and the bottom metal layer are respectively in a gap structure, a patch structure and a gap structure, the top metal pattern and the bottom metal pattern are the same and are in a crossed and winding gap structure, and the middle layer is a square metal ring. The aperture structures of the top and bottom layers provide a wider passband response, while the middle layer exhibits the appearance of bandstop characteristics. The distance between layers is optimized, and the coupling effect enables the three-frequency first-order high-selectivity performance. The center frequencies are respectively 20GHz, 28GHz and 38GHz, and moreover, the influence of different polarization angles and incidence angles on the FSS transmission response is simulated, and the result shows that the FSS transmission response has good polarization and incidence angle stability.
As shown in fig. 1, the top metal layer 1 is a slit structure as a periodic unit of FSS, and the structure is subjected to a bending process, each slit is bent in a bow shape, the bending angle is 90 °, a cross winding slit structure is formed, and the pattern is a rotational symmetric pattern. Also the bottom layer metal pattern 5 is identical to it, forming two band pass resonators.
As shown in fig. 2, the middle metal layer 3 of the unit structure is a square metal ring structure, which is used as an ideal band-stop resonator for coupling the resonance response of the top and bottom surfaces. And is used to adjust the frequency response at 38 GHz. Edge gaps 6 are respectively arranged on the four corners of the top metal layer 1 and the bottom metal layer 5, and are spaced from the crossed winding gaps by a certain distance. For increasing the coupling capacitance so that the out-of-band rejection is more pronounced (i.e., attenuation between passbands reaches above 20 dB). As shown in fig. 3, lamination bonding between all layers is performed by prepreg 7, which uses Rogers 4450B material with a dielectric constant similar to that of the dielectric substrate.
In the present embodiment are given
Example 1
Referring to fig. 1, a millimeter wave tri-frequency selective surface based on a multilayer coupling structure, the frequency selective surface period unit is composed of dielectric substrates 2 and 4, metal aperture layers 1 and 5 printed on two sides of the dielectric substrates, and a middle coupling layer 3, and four edge gap structures 6 are arranged around the top layer and the bottom layer and are not connected with each other. The top and bottom metal layers 1, 5 are identical in structure.
As shown in FIG. 2, the dielectric substrate 2, 4 is a Rogers RO4003C board made of high-frequency loss material, and has a side length of Dx and Dy, a dielectric constant of 3.55, a loss tangent of 0.0027 and a thickness of t.
Referring to fig. 2, the centers of the metal layers 1, 3 and 5 are heavily-overlapped along the z-axis direction, four edge slits 6 are distributed on the peripheries of the top layer and the bottom layer, the bending angle of the crossed winding slits is 90 degrees, and the crossed winding slits are not connected with the edge slits. All metal layers are printed by copper metal and have the thickness of 0.035 mm. In addition, the embodiment shows that the length of g2 in FIG. 2 is 0.2-0.24mm, the length of g3 and g4 and the length of w2 and w3 are 0.37-0.41mm, and the length of w1 is 0.75-0.8 mm; the length of w4 is 0.25-0.3 mm.
Referring to fig. 2, Dx, Dy is the side length of the periodic unit, Dx ═ Dy, where w1, w2, w3, w4, g2, g3, g4 are the length of each segment of the intersecting meandering gap, g5, g6, g7 are the width of the intersecting meandering gap, s, e are the length and width of the edge gap, Lx is the outer edge length of the square metal ring, Lx ═ Ly; l is the inner edge length of the square metal ring.
Fig. 3 shows a simplified diagram of a tri-band FSS equivalent circuit proposed by the present invention, which consists of a series LC filter and two identical parallel LC filters and a sandwiched series LC filter, the top and bottom layer slot structures have LC parallel response characteristics (L1 and C1, L2 and C2), the middle layer metal square ring has stop-band characteristics and is equivalent to an LC series circuit (L3 and C3), the substrate can be modeled by a transmission line, where each transmission line is simplified by an inductor (L4, L5), where the inductors act as coupling, the values of the coupling inductors L4, L5 are adjusted to achieve three pass-bands in the microwave band, and three resonance points are separated in batch out-of-band, and the suppression is very significant, where the full-wave simulation is performed by CST Suite, and the equivalent circuit is simulated by ADS. The FSS has 3 passbands of 20GHz, 28GHz and 38GHz respectively, and the prediction result of the equivalent circuit model is well matched with the full-wave simulation.
Example 2
Referring to fig. 2, the physical parameters of the inner edge length l of the square metal ring of the intermediate coupling layer 3 are changed (i.e. the circumference of the square metal ring is changed), and the size of l is in the range of 1.1mm-0.7mm, so as to realize independent tuning of the third resonance point of the frequency selective surface.
The invention adopts CST three-dimensional electromagnetic simulation software to carry out simulation analysis on various performance indexes, and the obtained simulation result is as follows:
fig. 6 shows S parameters obtained in the millimeter wave three-frequency selective surface full-wave simulation and equivalent circuit model based on the multilayer coupling structure, and the S parameters can verify the feasibility and accuracy of the equivalent circuit model of the FSS of the present invention.
As shown in fig. 7 and 8, which are simulation graphs of incident angle stability of the designed millimeter wave triple-frequency selective surface based on the multilayer coupling structure in two polarization modes, it can be seen that highly selective band-pass resonance responses are generated near 20GHz, 28GHz, and 38GHz, respectively, and out-of-band rejection is good; and shows good stability characteristics in the angle range of 0-60 deg.. The curves are completely fitted to be consistent under the two polarizations of TE/TM under the normal incidence of plane waves.
As shown in fig. 9, which is a simulation diagram of a millimeter wave triple-frequency selective surface based on a multilayer coupling structure under the condition of changing the length l parameter of the middle coupling layer, it can be seen that, as l increases, the third resonance band changes from 40GHz to 36GHz, and the low-frequency and medium-frequency resonance points remain unchanged, so that independent adjustment of the high-frequency resonance point is achieved.
Fig. 10 and 11 are graphs showing the measurement results of the transmission coefficient of the millimeter wave tri-frequency selective surface based on the multilayer coupling structure under TE/TM waves.
TABLE 1 optimized antenna size parameters
Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.
Claims (7)
1. A millimeter wave tri-frequency selection surface based on a multilayer coupling structure comprises a plurality of frequency selection units which are arranged in a two-dimensional plane to form an array structure, wherein each frequency selection unit comprises a top metal layer (1), a first high-frequency dielectric substrate (2), a middle metal layer (3), a second high-frequency dielectric substrate (4) and a bottom metal layer (5), the top metal layer (1), the middle metal layer (3) and the bottom metal layer (5) are metal patterns printed on the first high-frequency dielectric substrate (2) or the second high-frequency dielectric substrate (4), namely the top metal layer (1), the middle metal layer (3) and the bottom metal layer (5) are separated by the first high-frequency dielectric substrate (2) and the second high-frequency dielectric substrate (4), and the millimeter wave frequency selection surface is characterized in that the metal patterns of the top metal layer (1) and the bottom metal layer (5) are in a crossed winding slit structure, forming a winding slit structure by each arm in the crossed rectangular slit through a winding process; the middle metal layer (3) is a square metal ring.
2. The millimeter wave tri-frequency selective surface based on the multilayer coupling structure as claimed in claim 1, wherein four edge slits (6) are respectively provided on four corners of the top metal layer (1) and the bottom metal layer (5), the edge slits range from 0.1mm to 0.15mm, and each edge slit (6) is spaced from the dipole aperture by a distance ranging from 0.05mm to 0.15 mm.
3. A millimeter wave three-frequency selective surface based on multilayer coupling structure as claimed in claim 1, wherein said cross-winding slit structure comprises four 90 degree rotationally symmetric slits extending from a rotational symmetry point perpendicularly to one side of one metal layer, which is denoted as w4, and the width of w4 is denoted as g 5; at the other end of w4, extending in a direction perpendicular to w4, the segment of extension is denoted as w 3; at the other end of w3, extending along the direction perpendicular to w3 and the same extending direction as w4, the extension of the segment is denoted as w2, and the width of the w2 segment is denoted as g 6; at the other end of w2, extending in a direction perpendicular to w2 and opposite to the direction in which w3 extends, this segment of extension is denoted as w 1; at the other end of w1, extending in the same direction perpendicular to w1 and as w4, the extension of this segment is denoted as g4, and the width of the g4 segment is denoted as g 7; at the other end of g4, extending in the same direction perpendicular to g4 and as w3, this segment of extension is denoted g 3; at the other end of g3, it extends in a direction perpendicular to g3 and in the same direction as the direction in which w4 extends, this segment of extension being denoted as g1 and having the same width as g 7.
4. The millimeter wave tri-frequency selective surface based on the multilayer coupling structure as claimed in claim 1, wherein the widths of g5, g6 and g7 are in the range of 1.9mm-2mm, 1.4mm-1.5mm and 1.2mm-1.4mm in sequence.
5. A millimeter wave three-frequency selective surface based on a multilayer coupling structure according to claim 1, characterized in that the top metal layer (1) and the bottom metal layer (5) are high frequency rigid or flexible materials.
6. A millimeter wave three-frequency selective surface based on a multilayer coupling structure according to claim 1, wherein the thickness of the first high-frequency dielectric substrate (2) and the second high-frequency dielectric substrate (4) is 0.2mm-0.4 mm.
7. The millimeter wave tri-band frequency selective surface based on the multilayer coupling structure according to claim 1, wherein the bonding between the first high frequency dielectric substrate (2) and the intermediate metal layer (3) is performed by a prepreg (7).
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115133288A (en) * | 2022-08-29 | 2022-09-30 | 国网山西省电力公司电力科学研究院 | Multiband frequency selective surface structure and signal receiving apparatus |
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| Publication number | Publication date |
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| CN113346250B (en) | 2022-09-16 |
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