CN114421170A - Reconfigurable polarization conversion super surface loaded with PIN diode - Google Patents
Reconfigurable polarization conversion super surface loaded with PIN diode Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
- H01Q15/0006—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
- H01Q15/0086—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices having materials with a synthesized negative refractive index, e.g. metamaterials or left-handed materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
- H01Q15/24—Polarising devices; Polarisation filters
- H01Q15/242—Polarisation converters
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Abstract
The invention discloses a reconfigurable polarization conversion super-surface loaded with a PIN diode, which consists of N multiplied by N polarization conversion units, wherein a top metal cladding surface and a bottom metal grounding plate of each polarization conversion unit are respectively positioned on the upper surface and the lower surface of a cuboid dielectric substrate, metal bias lines loaded with isolation inductors are etched on the top metal cladding surface, and the PIN diode is arranged on a middle metal cladding surface; connecting the top metal clad metal bias line and the PIN diode through the metal column; the N × N polarization conversion unit bias lines of the polarization conversion super-surface are connected with each other. The working state of the polarization conversion super-surface is controlled by the on-off of the PIN diode, and the polarization conversion characteristics of the double-layer three-ring structures in different states are integrated by the PIN diode, so that the polarization conversion of electromagnetic waves on an extremely wide frequency band is realized. The invention has the advantages of wide band and reconfigurable working bandwidth, and can be used for reducing the radar scattering cross section of the wide band.
Description
Technical Field
The invention belongs to the technical field of radars, and further relates to a reconfigurable polarization conversion super-surface based on a PIN diode in the technical fields of electromagnetic fields and microwaves.
Background
The electromagnetic super-surface is a plane two-dimensional structure which is artificially designed, is generally formed by periodic or aperiodic arrangement of metal unit structures, has unique electromagnetic properties, and the properties are not possessed by natural materials. For example, the polarization direction, phase, propagation mode, and the like of the transmitted or reflected electromagnetic wave are changed. Different types of super surfaces have different modulation effects on electromagnetic waves, and currently, the super surfaces mainly comprise a frequency selection surface, an artificial magnetic conductor, a polarization conversion surface, a phase gradient surface and the like. It is noted that the properties of the electromagnetic super-surface are mainly determined by the cell structure and arrangement, and have no great relation with the material properties of the electromagnetic super-surface. In recent years, more and more super-surfaces are applied to antenna design, and radiation performance, scattering performance and the like of the antenna can be improved by introducing a suitable super-surface.
The Shanxi university proposes a metamaterial broadband polarization converter/absorber with reconfigurable functions in the patent document 'a metamaterial broadband polarization converter/absorber with reconfigurable functions' (application number: CN202010027566.9, publication number: CN111129783B) applied by Shanxi university. The polarization converter/absorber is sequentially provided with two dielectric layers and an air layer between the dielectric layers from top to bottom, the upper surface of the first dielectric layer is provided with a resonance structure layer, the resonance structure layer is formed by periodically arranging a plurality of diamond-X-shaped metal resonators in the same plane, ten resistors and six switches are welded in the diamond-X-shaped metal resonators, the upper surface of the second dielectric layer is covered with a metal reflecting plate, the lower surface of the second dielectric layer is provided with a bottom feed network, and the bottom feed network is connected with each diamond-X-shaped metal resonator through six wires. The method has the advantages that the method realizes the random conversion of broadband polarization conversion and broadband absorption effect, but has the defects that the whole thickness is thicker due to the existence of an air layer; the diode uses a wire for direct feeding, and has poor stability in operation.
The patent document of Guilin electronic science and technology university (application number: CN201820525449.3, publication number: CN207994077U) applied by Guilin electronic technology university provides a functional reconfigurable polarization converter based on an active super surface. The polarization converter consists of a dielectric substrate, an active super-surface layer and a metal floor layer. The active super surface layer is composed of a plurality of same butterfly-shaped structural units. The method has the advantages that the polarization form of the reflected wave can be regulated and controlled by adjusting the bias voltage, and the structure is simple. But has the disadvantages of low polarization conversion efficiency and narrow operating band.
Sun Shang et al propose a Reconfigurable Polarization Conversion surface in the paper "Reconfigurable Linear-to-Linear Polarization Based on PIN Diodes". The super surface integrally designs the bias line and the units, and finally realizes the conversion of two working modes of reflected wave polarization rotation and the whole polarization conversion surface equivalent to a metal floor. The reconfigurable polarization switching antenna has the advantages that when the dipole antenna is erected on the reconfigurable polarization switching surface arranged in a chessboard mode, the antenna can be flexibly switched between a low RCS state and a radiation state through the control switch. The disadvantage is that the reconstruction function effect is not obvious for the antenna outside the dipole antenna.
Disclosure of Invention
The invention aims to overcome the defects in the prior art, make up the blank of a polarization conversion super-surface in the field of reconfigurable super-surfaces, provide a reconfigurable polarization conversion unit based on a PIN diode, and aim to solve the problem of reducing the radar scattering cross section in an ultra-wide frequency band by adjusting the working state of the super-surface.
The invention is realized by the following technical scheme.
The invention provides a reconfigurable polarization conversion super-surface loaded with a PIN diode, which consists of N multiplied by N polarization conversion units, wherein each polarization conversion unit comprises a top metal covering surface, a middle metal covering surface, a cuboid medium substrate and a bottom metal grounding plate;
the top metal covering surface and the bottom metal grounding plate are respectively positioned on the upper surface and the lower surface of the cuboid dielectric substrate, and the middle metal covering surface is positioned in the middle of the dielectric substrate; the top metal clad surface is etched with a metal bias line loaded with an isolation inductor, and the middle metal clad surface is provided with a PIN diode.
Connecting a top metal clad metal bias line and a PIN diode through a metal column embedded in a cuboid dielectric substrate;
the N multiplied by N polarization conversion unit bias lines of the polarization conversion super surface are mutually connected, and the working mode of the polarization conversion unit is controlled by controlling the voltage of a feed line on the polarization conversion super surface.
Preferably, the top metal cladding comprises a metal bias line, a middle ring, an inner ring and an inductor, the middle ring and the inner ring are respectively a pair of split concentric semicircular arc rings, a pair of metal bias lines are respectively arranged on diagonal lines of the top metal cladding, and the pair of metal bias lines are opposite to the arc rings of the middle ring and the inner ring.
Preferably, the two ring curvatures of the middle ring and the inner ring are the same, and the opening widths at the ring openings are consistent.
Preferably, the pair of metal bias lines comprises a strip bias line and a triangular bias line, wherein the strip bias line is opposite to the circular arc rings of the middle ring and the inner ring, and an inductor is arranged on the strip bias line.
Preferably, the middle metal cladding comprises an outer ring, a PIN diode and a metal column, wherein the outer ring is a pair of half-circular arc rings which are oppositely opened, and the openings are connected through the pair of PIN diodes; the cambered surface of the outer ring is provided with a pair of openings butted with the metal columns, and the metal columns are embedded in the cuboid dielectric substrate and connect the outer ring with the bias line of the top metal covering surface.
Preferably, the centers of the middle ring, the inner ring and the outer ring are all located at the center of the polarization conversion unit, and the opening directions of the opening rings are the same and are perpendicular to the bias line.
Preferably, the cuboid dielectric substrate comprises an upper dielectric substrate and a lower dielectric substrate, the upper dielectric substrate is located between the top metal covering surface and the middle metal covering surface, the lower dielectric substrate is located between the middle metal covering surface and the bottom metal grounding plate, and the thickness of the lower dielectric substrate is larger than that of the upper dielectric substrate.
Preferably, the metal pillar is embedded in the upper dielectric substrate to connect the top metal cladding and the middle metal cladding.
Preferably, the rectangular parallelepiped dielectric substrate is made of FR4, and has a relative dielectric constant ∈ r of 4.4.
The working state of the polarization conversion super-surface is controlled by the conduction and the blockage of the PIN diode, and the polarization conversion characteristics of two double-layer three-ring structures in different states are integrated by the PIN diode, so that the polarization conversion of electromagnetic waves on an extremely wide frequency band is realized. When the PIN diode is in an OFF state, at the frequency points of 5.7GHz and 7.3GHz, the induced current is mainly distributed in the outer ring and is opposite to the induced current on the metal floor to form magnetic resonance; at 9.0GHz, the current is distributed in the outer ring and the middle ring and forms electric resonance and magnetic resonance with the same phase and opposite phase of the floor current respectively. Thus, when the PIN diode is in the OFF state, the resonance characteristic of the present invention is mainly caused by the outer and middle loops, independent of the inner loop. When the PIN diode is in an ON state, the induced current is mainly concentrated in the outer ring and the middle ring at a frequency point of 10GHz and respectively forms electric resonance and magnetic resonance with the induced current ON the metal floor in the same direction and the opposite direction. At the frequency point of 12.2GHz, the current is mainly and intensively distributed in the middle ring and forms magnetic resonance with the induced current of the metal floor in a reverse direction. At the 14GHz frequency point, not only the middle ring but also the inner ring generate strong induced currents, and the current directions of the induced currents form electric resonance and magnetic resonance in the same direction and the opposite direction of the floor current respectively.
Due to the adoption of the technical scheme, the invention has the following beneficial effects:
firstly, the isolation inductor is loaded on the bias line, so that the problem that the mutual influence of alternating current and direct current influences the control of the working state of the super surface is solved, and the stability of the incident working state of electromagnetic waves is high.
Secondly, the invention has extremely high polarization conversion efficiency and wider frequency band under two working states, thus overcoming the problem that the bandwidth of the polarization converter is difficult to widen, and having the advantage of effectively widening the bandwidth on the premise of keeping the polarization conversion efficiency.
Thirdly, as the bias line of the invention is etched on the upper layer of the polarization converter, the bias lines among different polarization converter units can be connected with each other, and finally the uniform feeding is realized, thus overcoming the problem that the performance of the polarization converter is influenced by using a lead wire, and leading the invention to have the advantages of uniform feeding and simple structure.
The polarization conversion unit and the mirror image unit thereof form a super surface in an 8 multiplied by 8 mode, so that the phase difference of reflected waves on adjacent sub-arrays is 180 degrees, the reflected waves are mutually counteracted according to an interference cancellation theory, and RCS reduction is realized. The invention can be respectively used for a 5.37-9.36GHz wave band and a 9.61-14.21GHz wave band under different working states, realizes the function of converting linear polarization incident waves into cross-polarized reflected waves in the working wave bands, and is suitable for reducing the radar scattering cross sections of various aircraft carrier platforms.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this application, illustrate embodiment(s) of the invention and together with the description serve to explain the principles of the invention:
FIG. 1 is a schematic view of the overall structure of the present invention;
FIGS. 2(a), (b) are top views of the metal facing of the present invention;
FIGS. 3(a), (b) are schematic views of the structural dimensions of the present invention;
FIG. 4 is a graph of S parameter under the condition of diode conduction in the simulation experiment of the present invention;
FIG. 5 is a graph of S-parameters under diode turn-off conditions in a simulation experiment of the present invention;
FIG. 6 is a graph of polarization conversion efficiency in a simulation experiment of the present invention;
fig. 7(a) and (b) are radar scattering cross-section curves of a model in which units are arranged in a checkerboard manner and two working states of the model in a simulation experiment of the invention.
Detailed Description
The present invention will now be described in detail with reference to the drawings and specific embodiments, wherein the exemplary embodiments and descriptions of the present invention are provided to explain the present invention without limiting the invention thereto.
Referring to fig. 1, the reconfigurable polarization conversion super-surface loaded with the PIN diode provided by the embodiment of the invention is composed of N × N polarization conversion units, and each polarization conversion unit includes four-layer structures of a top-layer metal cladding 1, a middle-layer metal cladding 2, a rectangular dielectric substrate 3 and a bottom-layer metal grounding plate 4. The top metal covering surface 1 and the bottom metal grounding plate 4 are respectively positioned on the upper surface and the lower surface of the cuboid dielectric substrate 3, the middle metal covering surface 2 is positioned at the upper position of the middle part of the dielectric substrate 3, and the top metal covering surface 1 and the middle metal covering surface 2 are connected through metal columns embedded in the cuboid dielectric substrate.
The overall structure of the metal cover of the present invention will be described in further detail with reference to fig. 2(a) and (b).
The structural composition of the top metal facing 1 of the polarization converter is further described in detail with reference to fig. 2 (a). The top metal facing 1 comprises a metal bias line 11, an intermediate ring 12, an inner ring 13 and an inductor 14. The middle ring 12 and the inner ring 13 are respectively a pair of split concentric semi-circular arc rings, the two rings have the same arc degree, and the opening widths at the ring openings are consistent. A pair of metal bias lines 11 are respectively arranged on the diagonal lines of the top metal covering surface, the metal bias lines 11 comprise strip-shaped bias lines and triangular bias lines, the strip-shaped bias lines are opposite to the circular arc rings of the middle ring 12 and the inner ring 13, and inductors 14 are arranged on the strip-shaped bias lines.
The inner ring 13 can widen the working bandwidth of the polarization converter when the PIN diode is in the ON state under the condition that the reconfigurable PCM ensures that the resonance characteristic of the polarization converter is not changed when the PIN diode is in the OFF state. The metal bias lines 11 are used as direct current input to control the working mode of the PIN diode of the middle-layer metal covering surface, the metal bias lines 11 are located on diagonal lines of the top-layer metal covering surface, when the polarization conversion super-surface is formed by the polarization conversion units and mirror image units of the polarization conversion units, the metal bias lines of the polarization conversion units located in the super-surface are connected with each other, and finally the control of the working mode of the polarization conversion units can be achieved by controlling the voltage of redundant feeder lines appearing at the peripheral edge of the polarization conversion super-surface. The inductor can pass through direct current and resist alternating current, and the influence of induced current generated by electromagnetic waves on the surface of the polarization converter on direct current input is reduced under the condition that direct current feeding is not influenced.
The structure and composition of the middle metal cladding 2 of the polarization converter will be further described in detail with reference to fig. 2 (b). The middle metal overlay 2 in the present invention comprises an outer ring 21, a PIN diode 22 and a metal cylinder 23. The outer ring is a pair of half-round arc rings which are oppositely opened and are connected at the opening through a pair of PIN diodes 22; openings are provided in the outer ring 21 through the metal cylinders 23, and the openings and the PIN diodes 22 are provided in the outer ring surface on a diagonal to the top metal cladding surface. The metal column 23 is embedded in the cuboid dielectric substrate 3, the outer ring 21 is connected with the bias line 11 of the top metal cladding surface 1, and the voltage at two ends of the PIN diode 22 is controlled through the feeding of the two metal bias lines, so that the on-off control of the PIN diode 22 is realized.
The centers of the middle ring 12, the inner ring 13 and the outer ring 21 are all located at the center of the polarization conversion unit, and the opening directions of the opening rings are the same and are perpendicular to the metal bias line.
In one embodiment, the rectangular dielectric substrate is FR4 with relative dielectric constant ∈r4.4, the thickness is 3.8mm, and the middle layer metal cladding surface 2 is positioned at the position of 3mm of the dielectric substrate. The width of the strip-shaped metal bias line 11 is 0.6mm, and the inductor 14 is a 15nH patch inductor. The metal cylinder 23 has a radius of 0.2mm and a height of 0.8 mm. The PIN diode 22 is a MADP-000402-. When the diode is turned on, the diode can be equivalent to the series connection of a resistor of 5 omega and an inductor of 0.45 nH; when the diode is off, it can be equivalent to a 5k Ω resistor in parallel with a 0.045pF capacitor.
The dimensions of the polarization conversion unit structure of the present invention will be described in further detail with reference to fig. 3(a) and (b).
The structural dimensions of the top view of the present invention are further described in detail with reference to fig. 3 (a).
The side length of the polarization conversion unit is P, and P is 9 mm. The three-layer ring structure takes the center of a square as a center, the radius of an inner ring is r1, the width of the inner ring is g1, and the opening width of the inner ring is W1, wherein r1 is 2.1mm, g1 is 0.5mm, and W1 is 1 mm; the middle ring has radius r2, width g2, and middle ring opening width W2, wherein r2 is 3mm, g2 is 0.5mm, and W2 is 1.2 mm; the radius of the outer ring is r3, the width is g3, the opening width of the inner ring is 3, wherein r3 is 3.1mm, g3 is 0.5mm, and W3 is 0.8 mm.
The structural dimensions of the side view of the present invention are further illustrated in conjunction with fig. 3 (b).
The cuboid dielectric substrate can be divided into two parts, including an upper dielectric substrate and a lower dielectric substrate, wherein the upper dielectric substrate is positioned between a top metal clad surface 1 and a middle metal clad surface 2, a metal column 23 is embedded in the part and is connected with the top metal clad surface 1 and the middle metal clad surface 2, the thickness of the part of the dielectric substrate is h2, and h2 is 0.8 mm; and the other part of the lower-layer dielectric substrate is positioned between the middle-layer metal covering surface 2 and the bottom-layer metal grounding plate, and the thickness of the part of the dielectric substrate is h1, wherein h1 is 3 mm.
The technical effects of the invention are further explained by combining simulation experiments as follows:
the co-polarized and cross-polarized reflectance curves of the polarization-switched super-surface for a normally incident x-polarized wave when the PIN diode is in the ON state, simulated by modeling the invention using commercial simulation software HFSS2021R1, are shown in fig. 4. The frequency values are plotted on the abscissa of fig. 4 in GHz and the reflection coefficients are plotted on the ordinate in dB. The dotted line in fig. 4 is a cross-polarization reflection curve and the solid line is a co-polarization reflection coefficient curve, the co-polarization reflection coefficient being less than-10 dB in the frequency band of 9.55-14.29GHz, wherein strong resonances are generated at 10GHz, 12.2GHz and 14GHz, wherein the reflection coefficient at 10GHz is lowest, up to about-30 dB, and the reflection coefficients of the remaining two resonance points are in the vicinity of-25 dB. The cross polarization reflection coefficient is more than-3 dB and less than-1 dB in the frequency band of 9.36-14.17 GHz.
The co-polarized and cross-polarized reflectance curves of the polarization switched super-surface for a normally incident x-polarized wave when the PIN diode is in the OFF state, simulated by modeling the invention using commercial simulation software HFSS2021R1, are shown in fig. 5. The frequency values are plotted on the abscissa of fig. 5 in GHz and the reflection coefficients are plotted on the ordinate in dB. The dotted line in fig. 5 is the cross-polarization reflection curve and the solid line is the co-polarization reflection coefficient curve, the co-polarization reflection coefficient is less than-10 dB in the band of 5.34-9.43GHz, and there are 3 resonance points in the band, 5.7GHz, 7.3GHz and 9GHz respectively, where the reflection coefficient at 9GHz is lowest, up to about-28 dB, and the reflection coefficients of the remaining two resonance points are near-25 dB. The cross polarization reflection coefficient is more than-3 dB and less than-0.5 dB in the frequency band of 5.06-9.62 GHz.
The polarization slew rate plot of the present invention when the PIN diode is in the ON and OFF states, respectively, is shown in fig. 6 using the commercial simulation software HFSS2021R 1. In FIG. 6, the abscissa represents frequency values in GHz and the ordinate represents polarization conversion efficiency PCR. The solid line in fig. 6 is a polarization conversion efficiency graph of the present invention when the PIN diode is in the OFF state, and the dotted line is a polarization conversion efficiency graph of the present invention when the PIN diode is in the ON state. When the PIN diode is in the OFF state, the polarization conversion ratio is greater than 90% in the frequency band of 9.61-14.21 GHz. When the PIN diode is in the ON state, the polarization conversion rate is greater than 90% in the frequency band of 5.37-9.36 GHz. This further illustrates that the present invention can effectively switch the polarization direction of the reflected wave in both the OFF state and the ON state. By comparing the working frequency bands of the PIN diode in the OFF state and the ON state, the PIN diode in the OFF state works in the low frequency band, and the relative bandwidth is 54.2%; the invention operates in the high frequency band in the ON state with a relative bandwidth of 38.6%. Therefore, the working frequency band of the invention can be flexibly regulated and controlled by controlling the on-off of the PIN diode, so that the invention has the function of frequency band reconstruction.
A graphical model of the polarization-switched metasurface resulting from the checkerboard arrangement of the present invention when the PIN diodes are in the ON and OFF states, respectively, and its radar scattering cross-section plots are shown in fig. 7(a), (b) using commercial simulation software HFSS2021R 1. The checkerboard arrangement of the present invention is further illustrated in connection with fig. 7 (a). The super surface is composed of a group of reconfigurable PCM units of 8 multiplied by 8 and mirror image units thereof, and in order to facilitate the design of external bias lines, the partial units in the middle of the super surface, which are enclosed by a square broken line, are improved as shown in the figure. The radar cross-section plot of the polarization-switched super-surface resulting from the checkerboard arrangement of the present invention when the PIN diodes were in the ON and OFF states, respectively, simulated by modeling the present invention using commercial simulation software HFSS2021R1 is shown in fig. 7 (b). By comparison, it is known that: in an OFF state, the RCS reduction of the reconfigurable super surface exceeds 5dB in a frequency band of 5.20-9.35 GHz; in the ON state, the RCS reduction of the super surface is more than 5dB in the frequency band of 8.8-14.29 GHz. Therefore, the reconfigurable super-surface has good RCS reduction effect in two working states, and the two low RCS curves are nearly adjacent, and the reduction at the intersection point of 9GHz is 11.5 dB. And the two are considered as a whole, so that a broadband low RCS curve can be obtained. The results show that the RCS reduction is greater than 5dB over a wide frequency band of 5.20-14.29GHz (93.4% relative bandwidth), with the RCS reduction being greater than 10dB over both the 5.73-6.72GHz and the 8.99-13.90GHz bands.
The simulation results show that compared with the prior art, the broadband polarization conversion circuit can effectively expand the bandwidth on the premise of maintaining the polarization conversion efficiency, and the working state of the broadband polarization conversion circuit can be changed at will by controlling the on-off of the PIN diode, so that the polarization conversion capability in different frequency bands is obtained. In addition, by controlling the working state of the PIN diode, the reconfigurable super surface can have effective RCS reduction performance in two adjacent frequency bands, thereby realizing broadband scattering suppression characteristics.
The present invention is not limited to the above-mentioned embodiments, and based on the technical solutions disclosed in the present invention, those skilled in the art can make some substitutions and modifications to some technical features without creative efforts according to the disclosed technical contents, and these substitutions and modifications are all within the protection scope of the present invention.
Claims (10)
1. A reconfigurable polarization conversion super-surface loaded with a PIN diode is characterized in that the polarization conversion super-surface consists of N multiplied by N polarization conversion units, and each polarization conversion unit comprises a top metal covering surface, a middle metal covering surface, a cuboid medium substrate and a bottom metal grounding plate;
the top metal covering surface and the bottom metal grounding plate are respectively positioned on the upper surface and the lower surface of the cuboid dielectric substrate, and the middle metal covering surface is positioned in the middle of the dielectric substrate; the top metal clad surface is etched with a metal bias line loaded with an isolation inductor, and the middle metal clad surface is provided with a PIN diode;
connecting a top metal clad metal bias line and a PIN diode through a metal column embedded in a cuboid dielectric substrate;
the N multiplied by N polarization conversion unit bias lines of the polarization conversion super surface are mutually connected, and the working mode of the polarization conversion unit is controlled by controlling the voltage of a feed line on the polarization conversion super surface.
2. The reconfigurable polarization conversion super-surface for loading a PIN diode according to claim 1, wherein the top metal cladding comprises metal bias lines, a middle ring, an inner ring and an inductor, the middle ring and the inner ring are respectively a pair of split concentric semi-circular arc rings, a pair of metal bias lines are respectively arranged on diagonal lines of the top metal cladding, and the pair of bias lines is opposite to the circular arc rings of the middle ring and the inner ring.
3. The reconfigurable polarization conversion super-surface of a loaded PIN diode according to claim 2, wherein the two loop curvatures of the middle loop and the inner loop are the same, and the opening widths at the loop mouth are the same.
4. The reconfigurable polarization conversion super-surface for loading PIN diodes according to claim 2, wherein the pair of metal bias lines comprises an elongated bias line and a triangular bias line, wherein the elongated bias line is opposite to the circular arc rings of the middle ring and the inner ring, and an inductor is disposed on the elongated bias line.
5. The reconfigurable polarization conversion super-surface loaded with PIN diodes as claimed in claim 2, wherein the middle metal cladding comprises an outer ring, PIN diodes and metal posts, the outer ring is a pair of half-circular arc rings which are oppositely opened and are connected at the opening through a pair of PIN diodes; the cambered surface of the outer ring is provided with a pair of openings butted with the metal columns, and the metal columns are embedded in the cuboid dielectric substrate and connect the outer ring with the bias line of the top metal covering surface.
6. The reconfigurable polarization conversion super-surface loaded with a PIN diode according to claim 5, wherein the centers of the middle ring, the inner ring and the outer ring are all located at the center of the polarization conversion unit, and the opening directions of the opening rings are the same and are perpendicular to the bias line.
7. The reconfigurable polarization conversion super-surface loaded with a PIN diode according to claim 1, wherein the cuboid dielectric substrate comprises an upper dielectric substrate and a lower dielectric substrate, the upper dielectric substrate is positioned between the top metal cladding and the middle metal cladding, the lower dielectric substrate is positioned between the middle metal cladding and the bottom metal grounding plate, and the thickness of the lower dielectric substrate is greater than that of the upper dielectric substrate.
8. The reconfigurable polarization conversion super-surface of a loaded PIN diode of claim 7, wherein the metal posts are embedded in the upper dielectric substrate, connecting the top metal cladding with the middle metal cladding.
9. The reconfigurable polarization conversion super-surface of a loaded PIN diode according to claim 7, wherein the rectangular dielectric substrate is made of FR4 and has a relative dielectric constant εr＝4.4。
10. The reconfigurable polarization conversion meta-surface loaded with PIN diodes of any of claims 1-9, wherein the polarization conversion meta-surface has RCS reduction greater than 5dB over a wide frequency band of 5.20-14.29GHz and greater than 10dB over both frequency bands of 5.73-6.72GHz and 8.99-13.90 GHz.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115566435A (en) * | 2022-09-29 | 2023-01-03 | 重庆大学 | Transmission-reflection reconfigurable polarization conversion super surface based on PIN diode |
| CN117394039A (en) * | 2023-10-30 | 2024-01-12 | 苏州大学 | Microwave device capable of adjusting electric field multi-polarization conversion |
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2022
- 2022-01-24 CN CN202210082496.6A patent/CN114421170A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115566435A (en) * | 2022-09-29 | 2023-01-03 | 重庆大学 | Transmission-reflection reconfigurable polarization conversion super surface based on PIN diode |
| CN115566435B (en) * | 2022-09-29 | 2024-03-22 | 重庆大学 | PIN diode-based transmission-reflection reconfigurable polarization conversion super-surface |
| CN117394039A (en) * | 2023-10-30 | 2024-01-12 | 苏州大学 | Microwave device capable of adjusting electric field multi-polarization conversion |
| CN117394039B (en) * | 2023-10-30 | 2024-07-09 | 苏州大学 | Microwave device capable of adjusting electric field multi-polarization conversion |
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