CN114583472B - Adjustable wave absorbing structure in L-Ka ultra-wide frequency band - Google Patents
Adjustable wave absorbing structure in L-Ka ultra-wide frequency band Download PDFInfo
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- CN114583472B CN114583472B CN202210301687.7A CN202210301687A CN114583472B CN 114583472 B CN114583472 B CN 114583472B CN 202210301687 A CN202210301687 A CN 202210301687A CN 114583472 B CN114583472 B CN 114583472B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q17/00—Devices for absorbing waves radiated from an antenna; Combinations of such devices with active antenna elements or systems
- H01Q17/007—Devices for absorbing waves radiated from an antenna; Combinations of such devices with active antenna elements or systems with means for controlling the absorption
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D30/00—Reducing energy consumption in communication networks
- Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks
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Abstract
The invention discloses an adjustable wave absorbing structure in an L-Ka ultra-wide frequency band, which comprises a wave absorbing body, wherein the wave absorbing body sequentially comprises a first active frequency selective surface layer, a first supporting layer, a passive frequency selective surface layer, a second active frequency selective surface layer, a second supporting layer and a pure metal layer; the first active frequency selective surface layer comprises a first square ring unit, a first diode and a first dielectric plate, wherein the first square ring unit is connected through a first inductor; the second active frequency selective surface layer comprises a second square ring unit, a second diode and a second dielectric plate, and the second square ring unit is connected through a second inductor; the passive frequency selective surface layer comprises square sheet elements and a third dielectric plate. The adjustable wave-absorbing structure in the ultra-wide frequency band from L to Ka of the structure solves the problems that the existing wave-absorbing material is difficult to realize good wave-absorbing performance in a low frequency band, and few wave-absorbing materials can have tunable wave-absorbing bands in multiple frequency bands, and is beneficial to adapting to more complex and variable electromagnetic environments.
Description
Technical Field
The invention relates to the technical field of intelligent electromagnetic modulation wave-absorbing materials, in particular to an adjustable wave-absorbing structure in an L-Ka ultra-wide frequency band.
Background
The wave absorbing material and the wave absorbing structure have wide application requirements in modern application scenes, such as avoiding signal interference of a plurality of signal transmitting systems in electronic equipment in similar frequency bands, reducing the scattering cross section of a radar antenna, and the like. Wave-absorbing materials can be classified into coating materials and structural materials according to the molding process and carrying capacity of the materials. The wave-absorbing coating material has good wave-absorbing performance only for certain wave bands, cannot have good wave-absorbing performance for wave bands outside specific wave bands, has low strength, is easy to peel off, has high maintenance cost, and has some limits in practical use. The structural wave-absorbing material is a multifunctional composite material and has the advantages of light weight and high strength. The traditional structure wave-absorbing material has certain advantages compared with the coating wave-absorbing material, but the wave-absorbing material has the defects of single wave-absorbing frequency band and non-tunable wave-absorbing frequency band after the structure is determined.
Therefore, in order to overcome the defects, the invention provides a multi-band tunable wave-absorbing material in an L-to-Ka ultra-wide band. The tunable absorption peaks exist in the ultra-low frequency range to the ultra-high frequency range, so that the method is beneficial to adapting to more complex and changeable electromagnetic environments.
Disclosure of Invention
The invention aims to provide an adjustable wave-absorbing structure in an L-Ka ultra-wide frequency band, which solves the problems that the existing wave-absorbing material is difficult to realize good wave-absorbing performance in a low frequency band, and few wave-absorbing materials can have tunable wave-absorbing bands in multiple frequency bands, and is beneficial to adapting to more complex and variable electromagnetic environments.
In order to achieve the above purpose, the invention provides an adjustable wave absorbing structure in an L-Ka ultra-wide band, which comprises a wave absorbing body, wherein the wave absorbing body sequentially comprises a first active frequency selective surface layer, a first supporting layer, a passive frequency selective surface layer, a second active frequency selective surface layer, a second supporting layer and a pure metal layer;
the first active frequency selective surface layer comprises a first square ring unit, a first diode and a first dielectric plate, wherein the first square ring unit is connected through a first inductor;
the second active frequency selective surface layer comprises a second square ring unit, a second diode and a second dielectric plate, and the second square ring unit is connected through a second inductor;
the passive frequency selective surface layer comprises a square sheet unit and a third dielectric plate.
Preferably, the periodic structures of the first square ring units are arranged according to the shape of the square ring at an angle of 45 degrees, the gaps for loading the first diodes on the first square ring units are positioned at the middle points of the side lengths of the first square ring units, and the positive and negative electrode arrangement modes of the first diodes are consistent.
Preferably, the periodic structure of the second square ring unit is arranged according to a square ring shape, the gaps for loading the second diodes on the second square ring unit are positioned on four vertex angles of the second square ring unit, and the arrangement modes of the positive poles and the negative poles of the second diodes are consistent.
Preferably, the first dielectric plate, the second dielectric plate and the third dielectric plate are all one or more of epoxy glass cloth laminated board, polyimide, polyethylene naphthalate, polytetrafluoroethylene glass cloth composite board or rogers board, and the first supporting layer and the second supporting layer are all one or more of polymethyl methacrylate, polyurethane, polyimide or polyethylene foam.
Preferably, the period of the second square ring unit is four times of the period of the square sheet unit, and the period of the second square ring unit is two times of the period of the first square ring unit.
Preferably, the first diode, the second diode, the first inductor and the second inductor are two-port patch components.
Preferably, the first square ring unit, the square sheet unit, the second square ring unit and the pure metal layer are all composed of pure metal.
Therefore, the adjustable wave-absorbing structure in the L-Ka ultra-wide frequency band adopts the structure, solves the problems that the existing wave-absorbing material is difficult to realize good wave-absorbing performance in a low frequency band, and few wave-absorbing materials can have tunable wave-absorbing bands in multiple frequency bands, and is beneficial to adapting to more complex and variable electromagnetic environments.
The technical scheme of the invention is further described in detail through the drawings and the embodiments.
Drawings
FIG. 1 is a schematic cross-sectional view of a tunable multi-band wave-absorbing structure in the ultra-wideband L to Ka according to the present invention;
fig. 2 (a) shows a cell structure of a first active frequency selective surface layer of a wave-absorbing material, and (b) shows an array structure of a first active frequency selective surface layer of a wave-absorbing material;
fig. 3 (a) shows a cell structure of a passive frequency selective surface layer of a wave-absorbing material, and (b) shows an array structure of a passive frequency selective surface layer of a wave-absorbing material;
fig. 4 (a) shows a cell structure of a second active frequency selective surface layer of a wave-absorbing material, and (b) shows an array structure of a second active frequency selective surface layer of a wave-absorbing material;
FIG. 5 is a graph showing the simulated effect of the reflectivity of a tunable multi-band wave absorbing material in the ultra-wide band of L to Ka.
Detailed Description
The invention provides an adjustable wave absorbing structure in an L-Ka ultra-wide frequency band, which comprises a wave absorbing body, wherein the wave absorbing body sequentially comprises a first active frequency selective surface layer 1, a first supporting layer 2, a passive frequency selective surface layer 3, a second active frequency selective surface layer 4, a second supporting layer 5 and a pure metal layer 6. The first active frequency selective surface layer 1 comprises a first square ring unit, a first diode and a first dielectric plate, wherein the first square ring unit is connected through a first inductor, and the inductor connection can eliminate the resonance influence of a feeder line between the first square ring unit on the first active frequency selective surface layer. The periodic structure of the first square ring unit is arranged according to the shape of the square ring center after the angle of 45 degrees, the gap loading the first diode on the first square ring unit is positioned at the midpoint of the side length of the first square ring unit, the arrangement mode of the positive electrode and the negative electrode of the first diode is consistent, and the addition of a feed line is facilitated.
The second active frequency selective surface 4 layer comprises second square ring units, second diodes and second dielectric plates, wherein the second square ring units are connected through second inductors, and the second inductors can eliminate resonance influence of feed lines between the second square ring units on the second active frequency selective surface layer. The passive frequency selective surface layer 3 comprises square-sheet elements and a third dielectric plate. The periodic structure of the second square ring unit is arranged according to a square ring shape, gaps for loading the second diodes on the second square ring unit are positioned on four vertex angles of the second square ring unit, and the arrangement mode of the positive and negative poles of the second diodes is consistent, so that the addition of a feed line is facilitated. The period of the second square ring unit is four times of the period of the square sheet unit, the period of the second square ring unit is two times of the period of the first square ring unit, and different period sizes are used for controlling the filtering effect of different wave bands for the purpose of having different resonance effects on the frequency selection surface. The method comprises the steps of engraving a required frequency selection surface unit structure on a copper-clad plate by using a printed circuit board technology, welding a diode and an inductor in a reserved gap, enabling the arrangement mode of the anode and the cathode of the diode to be consistent, enabling the tuning performance of a wave-absorbing material to be realized through an active frequency selection surface loaded with the diode, enabling the working state of the diode to be changed by external excitation, and enabling the diode to have corresponding resistors under different excitation sizes, namely enabling the active frequency selection surface to be the frequency selection surface loaded with the resistors with different sizes under different excitation.
The periodic structures of the first square ring units are arranged according to the shape of the square ring center rotated by 45 degrees, and the periodic structures of the second square ring units are arranged according to the square ring shape, and the two different arrangement modes aim at having good wave absorbing effect in the frequency bands controlled by the two different arrangement modes.
The first medium plate, the second medium plate and the third medium plate are all one or more of epoxy glass cloth laminated board, polyimide, polyethylene naphthalate, polytetrafluoroethylene glass cloth composite board or Rogowski, and the first support layer and the second support layer are all one or more of polymethyl methacrylate, polyurethane, polyimide or polyethylene foam.
The first diode, the second diode, the first inductor and the second inductor are two-port patch components, wherein the resistance value range of the diode is 0.01Ω -100000 Ω, and the inductance value is 0.1-1000nH.
The first square ring unit, the square sheet unit, the second square ring unit and the pure metal layer are all composed of pure metal, and the pure metal is copper metal generally.
The first square ring units are arranged in 30 rows, each row comprises 30 columns, the square sheet units are arranged in 60 rows, each row comprises 60 columns, the second square ring units are arranged in 15 rows, each row comprises 15 columns, and the whole size of the wave absorber sample plate is 300mm 2 。
The tuning performance of the tunable wave-absorbing material is realized by the active frequency selective surface loaded with the diode, the working state of the diode can be changed by external excitation, the diode corresponds to a certain resistor under a certain excitation size, namely the active frequency selective surface corresponds to the frequency selective surface loaded with resistors with different sizes. The passive frequency selective surface of the middle layer of the tunable wave-absorbing material has very important significance in the structure, the frequency selective surface of the square sheet structure is selected to realize the low-pass high-reflection frequency selective effect, and the passive frequency selective surface plays a role of a reflecting plate for the first active frequency selective surface of the upper layer; for the second active frequency selective surface of the lower layer, the passive frequency selective surface of the middle layer plays a role of transmitting the electromagnetic wave of the target frequency band.
The technical scheme of the invention is further described below through the attached drawings and the embodiments.
Examples
In this example, the thickness of the first active frequency selective surface layer is 0.3mm; the thickness of the first supporting layer is 1.5mm; the thickness of the passive frequency selective surface layer is 0.3mm; the thickness of the second active frequency selective surface layer is 1.5mm; the thickness of the second supporting layer is 9mm; the first dielectric plate 10, the dielectric plate 12 and the dielectric plate 14 are all epoxy glass laminated plates, wherein the dielectric constant epsilon=4.4 and the loss tangent tan delta=0.02 of the epoxy glass laminated plates; the first supporting layer and the second supporting layer are made of polymethyl methacrylate, dielectric constant epsilon=1.05 and loss tangent tan delta=0.003.
After the materials of all layers are arranged and glued according to the arrangement mode of the structure diagram, the materials of all layers are bonded by using a vacuum belt pressure mode, so that the influence of glue on the materials can be reduced as much as possible under the condition of ensuring bonding. The advantages of active frequency selective surfaces are apparent, but few active frequency selective surfaces can be tunable from ultra-low frequencies to multiple frequency bands within ultra-high frequency bands. The wave-absorbing material is required to generate more resonance when more absorption peaks are needed, and the reflection peaks can be obtained by arranging different resonance units on the surface of the same dielectric plate, but the reflection peaks have the problem of insufficient strength of partial reflection peaks, so that the problem can be solved by selecting different resonance units through a cascade coupling mode.
Therefore, the adjustable wave-absorbing structure in the L-Ka ultra-wide frequency band adopts the structure, solves the problems that the existing wave-absorbing material is difficult to realize good wave-absorbing performance in a low frequency band, and few wave-absorbing materials can have tunable wave-absorbing bands in multiple frequency bands, and is beneficial to adapting to more complex and variable electromagnetic environments.
Finally, it should be noted that: the above embodiments are only for illustrating the technical solution of the present invention and not for limiting it, and although the present invention has been described in detail with reference to the preferred embodiments, it will be understood by those skilled in the art that: the technical scheme of the invention can be modified or replaced by the same, and the modified technical scheme cannot deviate from the spirit and scope of the technical scheme of the invention.
Claims (6)
1. An adjustable wave absorbing structure in L to Ka ultra wide frequency band, which is characterized in that:
the wave absorber comprises a first active frequency selective surface layer, a first supporting layer, a passive frequency selective surface layer, a second active frequency selective surface layer, a second supporting layer and a pure metal layer in sequence;
the first active frequency selective surface layer comprises a first square ring unit, a first diode and a first dielectric plate, wherein the first square ring unit is connected through a first inductor;
the second active frequency selective surface layer comprises a second square ring unit, a second diode and a second dielectric plate, and the second square ring unit is connected through a second inductor;
the passive frequency selective surface layer comprises a square sheet unit and a third dielectric plate;
the periodic structures of the first square ring units are arranged according to the shape of the square ring with the center of 45 degrees, the gaps for loading the first diodes on the first square ring units are positioned at the middle points of the side lengths of the first square ring units, and the positive and negative arrangement modes of the first diodes are consistent;
the period of the second square ring unit is four times of the period of the square sheet unit, and the period of the second square ring unit is two times of the period of the first square ring unit.
2. The adjustable wave absorbing structure in ultra-wide frequency band from L to Ka according to claim 1, wherein: the periodic structure of the second square ring unit is arranged according to a square ring shape, gaps for loading the second diodes on the second square ring unit are positioned on four vertex angles of the second square ring unit, and the arrangement modes of the positive poles and the negative poles of the second diodes are consistent.
3. The adjustable wave absorbing structure in ultra-wide frequency band from L to Ka according to claim 1, wherein: the first medium plate, the second medium plate and the third medium plate are all one or more of epoxy glass cloth laminated board, polyimide, polyethylene naphthalate, polytetrafluoroethylene glass cloth composite board or Rodges board, and the first supporting layer and the second supporting layer are all one or more of polymethyl methacrylate, polyurethane, polyimide or polyethylene foam.
4. The adjustable wave absorbing structure in ultra-wide frequency band from L to Ka according to claim 1, wherein: the first diode, the second diode, the first inductor and the second inductor are two-port patch components.
5. The adjustable wave absorbing structure in ultra-wide frequency band from L to Ka according to claim 1, wherein: the first square ring unit, the square sheet unit, the second square ring unit and the pure metal layer are all composed of pure metal.
6. The adjustable wave absorbing structure in ultra-wide frequency band from L to Ka according to claim 1, wherein: the first square ring units are arranged in 30 rows, each row comprises 30 columns, the square sheet units are arranged in 60 rows, each row comprises 60 columns, and the second square ring units are arranged in 15 rows, each row comprises 15 columns.
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| CN115498422B (en) * | 2022-09-20 | 2023-08-29 | 中南大学 | AFSS-based adjustable ultra-wideband multilayer composite wave absorbing structure |
| CN116864995B (en) * | 2023-08-04 | 2023-12-22 | 中南大学 | Diode loading two-layer active metamaterial frequency division band adjustable wave absorbing structure |
| CN117374604A (en) * | 2023-11-07 | 2024-01-09 | 中南大学 | Active frequency selective surface structure based on PIN diode |
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| CN112821085A (en) * | 2020-12-31 | 2021-05-18 | 中南大学 | Multi-band tunable broadband wave absorber based on AFSS |
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