CN110994182B - S-band broadband strong field self-adaptive protection structure - Google Patents
S-band broadband strong field self-adaptive protection structure Download PDFInfo
- Publication number
- CN110994182B CN110994182B CN201911398876.5A CN201911398876A CN110994182B CN 110994182 B CN110994182 B CN 110994182B CN 201911398876 A CN201911398876 A CN 201911398876A CN 110994182 B CN110994182 B CN 110994182B
- Authority
- CN
- China
- Prior art keywords
- metal
- layer
- medium substrate
- structure according
- band
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/52—Means for reducing coupling between antennas; Means for reducing coupling between an antenna and another structure
- H01Q1/526—Electromagnetic shields
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
- H01Q15/0006—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
- H01Q15/0013—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective
- H01Q15/002—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective said selective devices being reconfigurable or tunable, e.g. using switches or diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
- H01Q15/0006—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
- H01Q15/0013—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective
- H01Q15/0026—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective said selective devices having a stacked geometry or having multiple layers
Abstract
The invention belongs to the field of electromagnetic pulse protection, and particularly relates to an S-band broadband strong field self-adaptive protection structure. The self-adaptive protective structure comprises three medium substrates, two PMI foam layers, two metal patch layers and a metal grid layer; the metal surface mount device comprises a first metal surface mount layer 1 attached to the upper surface of a first medium substrate, a first medium substrate 2, a first PMI foam layer 3, a metal grid layer 4 attached to the upper surface of a second medium substrate, a second medium substrate 5, a second PMI foam layer 6, a third medium substrate 7 and a second metal surface mount layer 8 attached to the lower surface of the third medium substrate in sequence from top to bottom. The invention can effectively widen the protection bandwidth of the protection structure, has the polarization insensitivity characteristic, the passband bandwidth of the protection structure is up to more than 1.5GHz, and has lower insertion loss in the passband, and when working signals enter the passband, the working signals can pass through the protection structure with low insertion loss; when strong electromagnetic energy is incident, most of the energy is reflected.
Description
Technical Field
The invention belongs to the field of electromagnetic pulse protection, and particularly relates to an S-band broadband strong field self-adaptive protection structure.
Background
Strong electromagnetic energy generated by an electromagnetic pulse weapon can enter the information equipment through holes, slits and other ways, so that the logic of the equipment is disordered and even the equipment is physically damaged. The antenna, which is a main component for transmitting and receiving spatial electromagnetic energy, must be exposed in space, and becomes an important approach for coupling of strong electromagnetic energy. The antenna is additionally provided with protective measures, so that the normal work of the antenna cannot be influenced, and strong electromagnetic pulse attack can be resisted, and the characteristic requires that the protective performance of the adopted protective measures is changed along with the change of the incident field strength, namely: when the incident field intensity is small, the electromagnetic wave can be allowed to pass through with low loss, and when the incident field is large, the strong field can be shielded.
The protective structure based on the impedance variable characteristic has the advantages that under the condition that the intensity of an incident field is small, the surface impedance is large, the surface current is small, and incident electromagnetic waves pass through the protective structure in low loss; when the incident field strength is relatively high, the surface impedance is reduced, and the surface current is increased, so that the strong field is shielded. Based on the principle, an energy selection surface is designed, and the compatibility of receiving and transmitting working signals and strong electromagnetic protection is realized in an L wave band. The PIN diode is characterized in that a thin layer of low-doped intrinsic semiconductor layer is added between P and N semiconductor materials, the resistance value is small and close to a short circuit when the PIN diode is forward biased, and the resistance value is large and close to an open circuit when the PIN diode is reverse biased, so that the PIN diode has wide application from low frequency to high frequency, and is particularly commonly used as a radio frequency switch and a radio frequency protection circuit in the radio frequency field. Therefore, the PIN diode is loaded on the surface of the metal patches arranged in the periodic array, the impedance value of the surface of the periodic array structure can be adjusted according to the intensity change of the incident field, and the self-adaptive protection efficiency is realized.
The existing protective structure design ideas are that the surface impedance is increased when strong field incidence occurs, the surface impedance is reduced when weak field incidence occurs, and the adopted structure is a single-layer periodic array metal patch structure, has strong electromagnetic radiation protection performance, but has narrower passband bandwidth. For the band-stop type protection structure, the working frequency band is usually in a lower frequency band, and due to the influence of the junction capacitance of the PIN diode, the working frequency band is difficult to extend to an S wave band or a higher frequency band; for a band-pass type protection structure, before design, the impedance effect of a PIN diode is not fully considered, so that the insertion loss is larger when the protection structure is designed to be incident at low field intensity, and the application of the structure is restricted.
Strong electromagnetic pulse protection structure based on PIN diode loading has been proposed[1][2]And an S-band protection structure is designed by utilizing a PIN diode loading method[3]But no research on the related design of the S-band broadband low-insertion-loss adaptive protection structure exists.
The reference patent documents are as follows:
[1] patent application, title: an electromagnetic energy selective surface, application No.: 200910215982.5, respectively;
[2] patent application, title: a strong electromagnetic pulse comprehensive protection method is disclosed in the application number: 201210370851.6, respectively;
[3] patent application, title: an ultra-wideband energy selection meter, application number: 201811472795.0 and (5) kneading.
The invention content is as follows:
in order to solve the technical problems, the invention designs an S-band broadband high-field self-adaptive electromagnetic protection structure, which adopts a multilayer symmetrical resonance composite structure, breaks through the limitation of the increase of the insertion loss of a protection structure passband caused by the impedance effect of a diode, and realizes the characteristic of low insertion loss of the protection structure passband. The characteristics of strong field conduction and weak field cutoff of the PIN diode are utilized to realize the opening and closing of the protective structure passband, so that the purposes of strong field shielding and low loss and passing of the weak field are achieved. The specific technical scheme is as follows:
an S-band broadband high-field self-adaptive protection structure comprises three medium substrates, two PMI foam layers, two metal patch layers and a metal grid layer;
the metal surface mount device comprises a first metal surface mount layer 1, a first medium substrate 2, a first PMI foam layer 3, a metal grid layer 4, a second medium substrate 5, a second PMI foam layer 6, a third medium substrate 7 and a second metal surface mount layer 8, wherein the first metal surface mount layer 1, the first medium substrate 2, the first PMI foam layer 3, the metal grid layer 4, the second medium substrate 5, the second PMI foam layer 6 and the third medium substrate are attached to the upper surface of a first medium substrate;
the first metal patch layer and the second metal patch layer are composed of periodically arranged square metal patches and PIN diodes 9 arranged between the square metal patches;
the metal grid layer 4 is a grid structure formed by metal wires.
Further, a PIN diode is arranged between two adjacent square metal patches, and two poles of the PIN diode are respectively connected with the middle points of the edges of the two adjacent square metal patches; all PIN diodes on the metal patch layer are divided into a longitudinal direction and a transverse direction, the anode orientations of the PIN diodes on the longitudinal direction are consistent, and the anode orientations of the PIN diodes on the transverse direction are consistent.
Further, the centers of the square metal patches are vertically projected on the metal grid layer and are superposed with grid points formed by metal wires;
further, the periodic size of the periodically arranged square metal patches ranges from 9mm to 10 mm.
Further, the thickness of the first PMI foam layer and the second PMI foam layer ranges from 2mm to 4 mm.
Further, the width of the metal wire ranges from 0.5mm to 2 mm.
Further, the space between two adjacent square metal patches is smaller than or equal to the size of the PIN diode.
In order to better understand the technical solution of the present invention, the working principle of the structure of the present invention is described below.
The working principle of the S-band broadband self-adaptive protection structure is as follows: when the low field intensity is incident, the PIN diode is in a cut-off state, the protection structure can be equivalent to a capacitor-inductor-capacitor parallel second-order band-pass filtering structure, and the impedance of the wires connected with each other is mainly determined by PMI foam. At the moment, the capacitor and the inductor are coupled with each other, the number of transmission poles is increased, the poles can be tightly distributed after structural parameters are adjusted, and the bandwidth is obviously increased. On the other hand, the thinner the PMI foam is, the greater the coupling strength is, and the equivalent capacitance is also increased, and the resonance frequency is shifted downward, so that the degree of miniaturization of the cell is increased. From the circuit point of view, when the capacitor-inductor-capacitor parallel circuit resonates, the equivalent impedance is infinite, so that signals can pass through the protection structure with low attenuation. When strong field radiation occurs, enough voltage is induced between adjacent metal patches, so that the PIN diode is conducted, the equivalent capacitance of the PIN diode is greatly reduced, and the equivalent capacitance of the metal patch layer is also reduced. From the filtering angle, the resonant frequency moves towards the high-frequency direction at the moment, the original pass band of the protection structure is closed, the upward moving distance of the pass band of the protection structure is far because of the great reduction of the capacitance, and the shielding efficiency at the original pass band is also high.
The beneficial effects obtained by adopting the invention are as follows: the invention designs an S-band broadband strong electromagnetic radiation protection structure based on PIN diode loading by utilizing a PIN diode and a metal patch and adopting a sandwich structure of a metal patch layer, a metal grid layer and a metal patch layer, can effectively widen the protection bandwidth of the protection structure, adopts the rotationally symmetric structures, has the polarization insensitivity characteristic, and has the passband (insertion loss less than 1dB) bandwidth of the protection structure as high as more than 1.5 GHz. The impedance effect of the PIN diode is fully considered during design, the designed structure has lower insertion loss in a pass band, and when a working signal in the pass band is incident, the working signal can pass through the protective structure with low insertion loss and enter equipment; when strong electromagnetic energy is incident, the metal patch on the protection structure induces voltage for conducting the PIN diode, surface current is increased, and a strong field is shielded, so that most energy is reflected, and the shielding efficiency of the strong field of the protection structure is not influenced. Because the square metal patch structure and the metal grid structure adopted in the technical scheme of the invention both belong to symmetrical structures, and the PIN diode loading also has symmetry, the designed protection structure has the polarization insensitivity characteristic.
Drawings
FIG. 1 is a three-dimensional schematic of the structure of the present invention;
fig. 2 is a schematic front view of a first metal patch layer and a first dielectric substrate;
FIG. 3 is a schematic front view of a metal mesh layer and a second dielectric substrate;
FIG. 4 is a graph showing the transmission performance of the protective structure according to the present invention when a low field intensity signal is incident;
FIG. 5 is a graph illustrating the shielding effectiveness of the shielding structure according to the present invention in case of strong radiation field in an embodiment;
FIG. 6 is a waveform diagram of two ends of the protection structure under irradiation of continuous waves with different field strengths in the embodiment, wherein (a) is small signal incidence, (b) is protection effect, and (c) is high field strength signal incidence;
fig. 7 is a waveform diagram of two ends of the protection structure under irradiation of pulse waveforms with different field strengths in the embodiment, wherein diagram (a) is small signal incidence, diagram (b) is protection effect, and diagram (c) is high field strength signal incidence.
Detailed Description
The invention is further illustrated by the following figures and examples.
As shown in fig. 1, the present invention provides an S-band broadband high-field adaptive protection structure, which includes three dielectric substrates, two PMI foam layers, and two metal patch layers;
the metal surface mount device comprises a first metal surface mount layer, a first medium substrate, a first PMI foam layer, a metal grid layer, a second medium substrate, a second PMI foam layer and a second metal surface mount layer which are arranged from top to bottom in sequence;
the first metal patch layer and the second metal patch layer are composed of periodically arranged square metal patches and PIN diodes arranged between the square metal patches; as shown in fig. 2, a schematic front view of a first metal patch layer and a first dielectric substrate; the layout of the third dielectric substrate and the second metal patch layer on the lower surface of the third dielectric substrate is the same as that of the structure.
The metal mesh layer is a metal wire forming a mesh structure, as shown in fig. 3.
In an embodiment, the three dielectric substrates can be made of Rogers RT5870 substrate materials, the thickness of the three dielectric substrates is 0.25mm, and the dielectric constant of the three dielectric substrates is 2.33; a PIN diode is arranged between two adjacent square metal patches on the same metal patch layer, and two poles of the PIN diode are respectively connected with the middle points of the two adjacent square metal patches; dividing all PIN diodes on the same metal patch layer into a longitudinal direction and a transverse direction, wherein the positive poles of all the PIN diodes in the longitudinal direction are consistent in orientation, the positive poles of all the PIN diodes in the transverse direction are consistent in orientation, and the type of the PIN diode is selected to be NXP Bap 5102. The dielectric substrate and the diode are only a selection mode of the embodiment, and other similar products in the prior art can be selected. The period of the periodically arranged square metal patches is 10mm, wherein the size of the metal patches is 9mm, and the distance between the metal patches is 1 mm.
The first PMI foam layer and the second PMI foam layer are light high-strength foam plastics, the dielectric constant of the foam plastics is about 1.5, and the thickness of the foam plastics is 3 mm. Two PMI foam layers are arranged between each layer in the protective structure and play a supporting role.
The metal grid layer is of a metal wire forming grid structure, each grid in the metal grid layer is square, the length of a metal wire of each grid is 10mm, and the width of the metal grid wire is 1 mm;
if the S-band broadband high-field self-adaptive protection structure is virtually divided into a plurality of square unit periodic structures, the period of a square metal patch is 10mm, the length of a metal wire of each grid is 10mm, and in the unit periodic structure, a grid point formed by the metal wires on the metal grid layer and a central connecting line of the square metal patch are perpendicular to the metal grid layer.
Next, the simulation result of the present invention is shown in fig. 4 by simulation with commercial microwave simulation software CST. As can be seen from FIG. 4, when the protection structure is incident at low field intensity, the insertion loss is less than 1dB in the wide frequency band range of 2.56-3.9 GHz. In the simulation process, resistors are loaded on the PIN diode equivalent circuits, and the fact that the protective structure can still transmit signals with low loss when impedance effect exists is shown.
As can be seen from FIG. 5, when a strong field is incident, the passband of the protection structure is closed, and the shielding effectiveness reaches more than 35dB in the original passband frequency range, thereby effectively preventing a high-power signal from passing through the protection structure.
Fig. 6 shows the change of the transmission characteristic of the pass band of the protective structure under the incidence of continuous wave signals with different field strengths, which is obtained by using a diode model of the CST simulation software to replace a PIN diode equivalent circuit. As can be seen from the figure, at the time of incidence of the continuous wave weak signal, the signal is hardly attenuated through the guard structure, as shown in fig. 6 (a). As the incident signal strength increases, the shielding effectiveness of the guard structure begins to increase, as shown in fig. 6 (b). As can be seen from fig. 6(c), when the incident signal strength is sufficiently high, the shielding effectiveness of the shielding structure is also sufficiently high to ensure that the signal passing through the shielding structure is within the safe range that the security system is subjected to.
Fig. 7 shows the change of the transmission characteristic of the pass band of the protective structure under the incidence of pulse signals with different field strengths, which is obtained by using a diode model of CST simulation software to replace a PIN diode equivalent circuit. As can be seen from the figure, the guard structure has a protective effect against the pulses. When the pulse signal strength is small, the signal penetrates the guard structure with almost no loss, as shown in fig. 7 (a). As the signal strength increases, the shielding effectiveness of the shielding structure increases, as shown in fig. 7 (b). As can be seen from fig. 7(c), when the incident signal strength is sufficiently high, the shielding effectiveness of the shielding structure can also be increased sufficiently to ensure that the electromagnetic energy penetrating the shielding structure is within the safe range that the system can withstand.
The invention realizes an S-band broadband high-field self-adaptive protection structure which is formed by compounding a metal patch and a metal grid structure through a dielectric substrate and a PMI foam layer. The periodic metal patch is connected with the metal grid layer in series by utilizing the PMI foam with low dielectric constant and low loss to form a sandwich type metal array resonance structure, which is equivalent to a broadband band-pass circuit with a capacitor, an inductor and the capacitor connected in parallel, thereby realizing the S-band broadband band-pass characteristic of the protective structure. The PIN diode is loaded on the periodic square metal patch, the pass band is in a multilayer parallel structure resonance, and the metal patch is in a non-resonance structure, so that the current flowing through the PIN diode is effectively reduced, and the insertion loss in the pass band is reduced. Meanwhile, the parasitic capacitance of the PIN diode can improve the equivalent capacitance of the metal patch array, the period size of the metal patch is effectively reduced, miniaturization is achieved, and the frequency of the grating lobes is pushed upwards. In the wide band range of the S wave band, a weak field intensity signal is allowed to pass through with low insertion loss; when strong electromagnetic radiation reaches, the PIN diode is conducted, the pass band of the protection structure is closed, and energy is reflected.
The above embodiments are only used to illustrate the effects of the present invention, and the scope of the present invention is not limited to the above embodiments, and all technical solutions belonging to the idea of the present invention belong to the scope of the present invention. It should be noted that modifications and embellishments within the scope of the invention may be made by those skilled in the art without departing from the principle of the invention.
Claims (9)
1. The utility model provides a strong field self-adaptation protective structure of S wave band broadband which characterized in that: the metal surface mount device comprises three medium substrates, two PMI foam layers and two metal surface mount layers;
the metal surface mount device comprises a first metal surface mount layer (1) attached to the upper surface of a first medium substrate, a first medium substrate (2), a first PMI foam layer (3), a metal grid layer (4) attached to the upper surface of a second medium substrate, a second medium substrate (5), a second PMI foam layer (6), a third medium substrate (7) and a second metal surface mount layer (8) attached to the lower surface of the third medium substrate in sequence from top to bottom;
the first metal patch layer and the second metal patch layer are composed of periodically arranged square metal patches and PIN diodes (9) arranged between the square metal patches;
the metal grid layer is in a metal wire-formed grid structure;
a PIN diode is arranged between two adjacent square metal patches, and two poles of the PIN diode are respectively connected with the middle points of the sides of the two adjacent square metal patches; all PIN diodes on the metal patch layer are divided into a longitudinal direction and a transverse direction, the anode orientations of the PIN diodes on the longitudinal direction are consistent, and the anode orientations of the PIN diodes on the transverse direction are consistent.
2. The S-band wideband high-field adaptive guard structure according to claim 1, wherein: and the vertical projection of the center of the square metal patch on the metal grid layer is superposed with the grid points formed by the metal wires.
3. The S-band wideband high-field adaptive guard structure according to claim 1, wherein: the period size range of the periodically arranged square metal patches is 9-10 mm.
4. The S-band wideband high-field adaptive guard structure according to claim 1, wherein: the thickness of the PMI foam layer ranges from 2mm to 4 mm.
5. The S-band wideband high-field adaptive guard structure according to claim 1, wherein: the width of the metal wire ranges from 0.5mm to 2 mm.
6. The S-band wideband high-field adaptive guard structure according to claim 1, wherein: the period of the periodically arranged square metal patches is 10 mm.
7. The S-band wideband high-field adaptive guard structure according to claim 1, wherein: the thickness of the PMI foam layer is 3 mm.
8. The S-band wideband high-field adaptive guard structure according to claim 1, wherein: the width of the metal wire is 1 mm.
9. The S-band wideband high-field adaptive guard structure according to claim 1, wherein: the space between two adjacent square metal patches is smaller than or equal to the size of the PIN diode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911398876.5A CN110994182B (en) | 2019-12-30 | 2019-12-30 | S-band broadband strong field self-adaptive protection structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911398876.5A CN110994182B (en) | 2019-12-30 | 2019-12-30 | S-band broadband strong field self-adaptive protection structure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN110994182A CN110994182A (en) | 2020-04-10 |
| CN110994182B true CN110994182B (en) | 2020-12-18 |
Family
ID=70079150
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201911398876.5A Expired - Fee Related CN110994182B (en) | 2019-12-30 | 2019-12-30 | S-band broadband strong field self-adaptive protection structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110994182B (en) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111584982B (en) * | 2020-05-08 | 2021-06-22 | 中国船舶工业集团公司第七〇八研究所 | Waveguide limiter |
| CN111987468B (en) * | 2020-07-07 | 2022-08-19 | 中国船舶工业集团公司第七0八研究所 | Reflective energy selection structure |
| CN112467391B (en) * | 2020-11-16 | 2021-12-31 | 北京航空航天大学 | Inhale and pass through integrative controllable electromagnetic protection material |
| CN114336017A (en) * | 2021-06-16 | 2022-04-12 | 湖南电磁场科技有限公司 | Satellite navigation antenna with strong electromagnetic protection capability |
| CN113488778B (en) * | 2021-06-22 | 2022-11-11 | 湖南电磁场科技有限公司 | Transmission wave-absorbing structure with adjustable pass band state |
| CN113745841B (en) * | 2021-07-29 | 2023-08-29 | 中国人民解放军92728部队 | Conformal electromagnetic stealth subsurface and design method thereof |
| CN115458948B (en) * | 2022-11-11 | 2023-01-06 | 中国人民解放军国防科技大学 | High-frequency ultra-wideband energy selection surface |
| CN116454638B (en) * | 2023-06-07 | 2023-09-01 | 中国人民解放军国防科技大学 | Ultra-wideband micro-nano energy selection surface of L-Ku frequency band |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109103603A (en) * | 2018-08-10 | 2018-12-28 | 南京邮电大学 | Active frequencies based on varactor select surface texture |
| CN109193166A (en) * | 2018-08-02 | 2019-01-11 | 哈尔滨工程大学 | A kind of restructural frequency-selective surfaces of dual-band and its control method |
| CN109273859A (en) * | 2018-10-17 | 2019-01-25 | 哈尔滨工业大学 | Coupled mode broadband active frequency-selective surfaces |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101754668B (en) * | 2009-12-31 | 2011-11-09 | 中国人民解放军国防科学技术大学 | Electromagnetic energy selection surface |
| CN102916237B (en) * | 2012-09-28 | 2014-09-17 | 中国人民解放军国防科学技术大学 | Comprehensive protection method for strong electromagnetic pulse |
| US8908251B2 (en) * | 2013-01-30 | 2014-12-09 | Hrl Laboratories, Llc | Tunable optical metamaterial |
| CN104167577B (en) * | 2014-08-27 | 2016-05-11 | 中国舰船研究设计中心 | A kind of Novel electric tunable FSS structure |
| CN109994838A (en) * | 2017-12-29 | 2019-07-09 | 深圳光启尖端技术有限责任公司 | A kind of controllable absorbing meta-material |
| CN109004369B (en) * | 2018-06-28 | 2021-01-15 | 中国人民解放军空军工程大学 | Reflection type polarization rotating super surface based on frequency selective surface backboard |
| CN109451718B (en) * | 2018-12-04 | 2020-06-19 | 中国人民解放军国防科技大学 | Ultra-wideband energy selection surface |
-
2019
- 2019-12-30 CN CN201911398876.5A patent/CN110994182B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109193166A (en) * | 2018-08-02 | 2019-01-11 | 哈尔滨工程大学 | A kind of restructural frequency-selective surfaces of dual-band and its control method |
| CN109103603A (en) * | 2018-08-10 | 2018-12-28 | 南京邮电大学 | Active frequencies based on varactor select surface texture |
| CN109273859A (en) * | 2018-10-17 | 2019-01-25 | 哈尔滨工业大学 | Coupled mode broadband active frequency-selective surfaces |
Also Published As
| Publication number | Publication date |
|---|---|
| CN110994182A (en) | 2020-04-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN110994182B (en) | S-band broadband strong field self-adaptive protection structure | |
| CN110247196B (en) | Frequency selective wave absorber for medium-frequency broadband wave transmission, high-frequency wave absorption and low-frequency wave absorption | |
| CN107611622B (en) | Double-side-frequency broadband wave absorber with controllable pass band | |
| CN112103660B (en) | C-band broadband energy selection surface | |
| CN107508017B (en) | Band-suction type broadband frequency selection structure and application thereof | |
| CN102437399B (en) | High-power microwave impulse shield | |
| CN107579352B (en) | Ultra-wideband frequency selective surface suitable for antenna housing | |
| CN110048240B (en) | High-impedance band suppression low-radar scattering sectional area transmission array antenna | |
| CN112117546B (en) | C-band ultra-wideband energy selection surface | |
| CN112928491B (en) | Ultra-wideband wave-absorbing dual-polarized switchable anti-absorption integrated material | |
| CN113488778B (en) | Transmission wave-absorbing structure with adjustable pass band state | |
| CN109451718A (en) | Ultra-wideband energy selection surface | |
| CN111029782B (en) | Wave-transparent window switchable absorbing and penetrating integrated material | |
| CN111384594A (en) | High-frequency radiator, multi-frequency array antenna and base station | |
| CN111584982B (en) | Waveguide limiter | |
| CN115458948A (en) | High-frequency ultra-wideband energy selection surface | |
| CN109149094A (en) | dipole antenna array | |
| CN102142679A (en) | Strong-electromagnetic pulse protection device of ultra-short wave communication frequency range | |
| CN104347939A (en) | MIMO (multi-input and multi-output) antenna system and radiation absorbing method | |
| CN109037957B (en) | Three-dimensional novel broadband wave-absorbing type frequency selection structure and application thereof | |
| CN108321550B (en) | Filtering structure of low-frequency wave-absorbing high-frequency wave-transmitting antenna | |
| CN102882484A (en) | High-power microwave amplitude limiter | |
| CN115173056B (en) | Low RCS broadband radome based on antenna reciprocity principle | |
| Yadav et al. | A frequency selective surface for 2.25 GHz, WiMax and WLAN applications | |
| CN114824812B (en) | Ultra-wideband energy selection surface based on multilayer structure |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20201218 Termination date: 20211230 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |