CN109037957B - Three-dimensional novel broadband wave-absorbing type frequency selection structure and application thereof - Google Patents
Three-dimensional novel broadband wave-absorbing type frequency selection structure and application thereof Download PDFInfo
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- CN109037957B CN109037957B CN201810622647.6A CN201810622647A CN109037957B CN 109037957 B CN109037957 B CN 109037957B CN 201810622647 A CN201810622647 A CN 201810622647A CN 109037957 B CN109037957 B CN 109037957B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
- H01Q15/0006—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
- H01Q15/0013—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective
- H01Q15/0026—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective said selective devices having a stacked geometry or having multiple layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/42—Housings not intimately mechanically associated with radiating elements, e.g. radome
- H01Q1/422—Housings not intimately mechanically associated with radiating elements, e.g. radome comprising two or more layers of dielectric material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q17/00—Devices for absorbing waves radiated from an antenna; Combinations of such devices with active antenna elements or systems
- H01Q17/008—Devices for absorbing waves radiated from an antenna; Combinations of such devices with active antenna elements or systems with a particular shape
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Abstract
The invention relates to a novel three-dimensional broadband wave-absorbing frequency selection structure. The traditional wave-absorbing frequency selection structure is based on a mode of plane cascade of two or more two-dimensional arrays, the passband is narrow, the insertion loss is large, and the wave-absorbing performance is not excellent enough. According to the invention, a mode of combining a transmission channel with a wave-absorbing channel structure is adopted to build a three-dimensional novel broadband wave-absorbing type frequency selection structure, so that a pass band can be realized, and the broadband wave-absorbing type frequency selection structure has low insertion loss and high frequency selection characteristics; the two broadband wave absorption bands are positioned on two sides of the passband, the structure has high wave absorption rate, and the thickness is thinner than that of a common three-dimensional wave absorption type frequency selection structure.
Description
Technical Field
The invention belongs to the technical field of microwaves, and relates to a broadband wave-absorbing frequency selection structure which can be used as a stealth antenna housing of an antenna.
Background
The development of modern military technology has higher and higher requirements on stealth performance of various combat platforms. Stealth radomes play an important role in the reduction of the radar scattering cross section (RCS) of an antenna. At present, band-pass type frequency selective surfaces have been widely used in stealth radomes. Within the pass band, it is almost transparent to electromagnetic waves, allowing the present radar antenna to transmit and receive electromagnetic waves. Outside the pass band, it can deflect the reflection of the enemy radar from the incident direction, thereby reducing RCS. However, only a single station (monostatic) RCS is so reduced. For radar systems such as two-station or multi-station systems, the frequency selective surface still cannot effectively reduce RCS unless the unwanted electromagnetic waves can be absorbed in an absorptive manner to minimize reflections. Therefore, a more ideal concept of a contact radome is proposed, i.e. the antenna can be transparent to electromagnetic waves in an operating frequency band, and all incident waves outside the band are absorbed. A frequency selective surface capable of performing such a function is called an absorbing frequency selective surface/structure.
In order to solve the defects of unstable frequency selection characteristic of a two-dimensional wave-absorbing frequency selection surface, unstable frequency response performance of the two-dimensional wave-absorbing frequency selection surface in oblique incident waves and the like, scientists propose a three-dimensional wave-absorbing frequency selection structure. The dimension of the electromagnetic wave propagation direction is fully utilized, so that the three-dimensional wave absorption type frequency selection structure has higher design freedom, and can realize more excellent performance. The existing technology usually generates stop band by adding some resistor and capacitor structures, the structure is complicated and complex, the invention uses all resistance bands of the structure to research; the present invention also achieves two broadband absorption bands located on either side of the passband, which is an important advantage of the present invention.
However, current absorbing frequency selective structures (both two-dimensional and three-dimensional) still have certain difficulties in achieving two broadband absorbing bands on either side of the passband. Such performance is a real and urgent requirement for stealth radomes.
Disclosure of Invention
The invention aims to provide a three-dimensional broadband wave-absorbing type frequency selection structure aiming at the difficulty of the prior art. The performance characteristics are as follows: (1) a pass band having low insertion loss and high frequency selectivity characteristics; (2) two broadband absorption bands are positioned on two sides of the passband. In addition, the structure thickness is thinner than that of a common three-dimensional wave absorption type frequency selection structure, and is only 0.12 times of the wavelength of the lowest wave absorption frequency. Meanwhile, the structural design has high degree of freedom, and can be manually assembled and processed.
The three-dimensional broadband wave absorption type frequency selection structure is a periodic structure, each structural unit comprises a wave absorption channel and a transmission channel, and specifically comprises a first metal surface, a third medium substrate, a third metal surface, a fourth medium substrate and a fourth metal surface which are sequentially arranged from top to bottom;
an air layer is arranged between the first metal surface and the third medium substrate, the first medium substrate, the second medium substrate and the second metal surface (as reflecting surfaces) are sequentially arranged in the air layer, the first medium substrate, the second medium substrate and the second metal surface are perpendicular to the third medium substrate, and the second medium substrate is positioned at the position where the passband field intensity is about strongest;
the outer side of the first medium substrate as an incident surface is provided with a first metal wire, one end of the first metal wire is connected with the first metal surface, and the other end of the first metal wire is connected with a microstrip line of a third medium substrate; wherein, the first metal lead is welded with a capacitor C1 and a first resistor;
two identical second metal wires (equivalent to a capacitor C2) are arranged on one side of the second dielectric substrate close to the first dielectric substrate, one end of each second metal wire is connected with the first metal surface, and the other end of each second metal wire is connected with a metalized through hole of the third dielectric substrate; the second metal wire is in a broken wire structure, a protrusion is arranged at the broken wire part, and the distance between broken wires and the height of the protrusion influence the size of the capacitor C2.
The lower surface of the third medium substrate is provided with a third metal surface, and the upper surface of the third medium substrate is provided with a microstrip line; one end of the microstrip line is connected with the second metal surface, and the other end of the microstrip line is connected with the first metal lead; a second resistor is welded on the position, close to the second metal surface, of the microstrip line; the third medium substrate is provided with a first metalized through hole, and two ends of the metalized through hole are respectively connected with the second metal wire and the third metal surface;
the lower surface of the fourth dielectric substrate is provided with a fourth metal surface, a plurality of non-metalized through holes which are periodically distributed, and a second metalized through hole which is positioned at the position with the minimum passband field strength. The two ends of the non-metalized via hole and the second metalized via hole are respectively connected with the third metal surface and the fourth metal surface.
Preferably, the third and fourth dielectric substrates are the same in length and different in thickness, and the thicker the third and fourth dielectric substrates are, the larger the dielectric constant of the material is, the larger the loss of the entire board is.
The wave-absorbing channel consists of a first metal surface, a capacitor C1, a first resistor, a second metal surface, a third medium substrate, a third metal surface, a first metal wire, a second metal wire and a microstrip line;
the transmission channel is composed of a third metal surface, a fourth medium substrate and a fourth metal surface.
Height h of air layeraAnd when the frequency is increased, the initial frequency of the low-frequency absorption band is reduced, so that the bandwidth is increased, but the matching of the first resonance point of the high-frequency absorption band is poor. When the resistance value of the second resistor is increased, the matching of the high-frequency wave absorbing section is improved, the initial frequency of the low-frequency wave absorbing section is increased, and therefore the bandwidth is reduced.
The change in capacitance C2 affects the side-to-side movement of the relative position of the pass band.
When the height h of the unit structure changes, w is the width of the unit structure, and as can be known from the knowledge about the input impedance, the trend of the change of w and the height should be the same, so as to ensure the impedance matching. The resulting waveform is optimal.
The specific working principle is as follows: after the electromagnetic waves enter the wave-absorbing channel, the electromagnetic waves are reflected to form a loop due to the existence of the second metal surface, induced currents are formed on the microstrip line and the first and second metal leads, and the formed currents are consumed by the first resistor and the second resistor, so that the wave-absorbing effect is realized. The lower parallel plate of the third metal plane and the fourth metal plane is an open resonator which generates a pass band around its resonance frequency. There is a metallized via in the center of the fourth dielectric substrate, which corresponds to an inductor (L)p). Because the existence of the inductance can introduce a resonant frequency on the original basis, the range of the passband can be widened by changing the size of the inductance and related parameters.
The invention further aims to provide the novel three-dimensional broadband wave-absorbing frequency selection structure, and the novel three-dimensional broadband wave-absorbing frequency selection structure is applied to a stealth antenna cover.
The broadband wave absorption type frequency selection structure has the following advantages:
(1) the capacitance structure (second metal wire) is loaded on the upper parallel plate waveguide formed by the first metal surface and the third metal surface, and the movement of the stop band can be realized by changing the size of the capacitance between the upper plate and the lower plate, so that the research is facilitated.
(2) The passband dielectric substrate can construct the performance of a material with the dielectric constant between 1 and 2 by the method of punching, the whole technology is more favorably realized, and the passband effect is good.
(3) The low-frequency relative bandwidth is 65.56%, the high-frequency relative bandwidth is 50.64%, the whole bandwidth performance is good, and the three-dimensional broadband wave-absorbing frequency selective surface is good in performance.
(4) The novel three-dimensional broadband wave absorption type frequency selection structure is simple to manufacture, the whole structure can be realized by using a common PCB (printed circuit board) process, and the wave absorption surface element device only needs to be welded with a capacitor and a resistor, is simple to manufacture and can be manually assembled and processed.
Drawings
FIG. 1 is a schematic diagram of a three-dimensional cell structure of the present invention;
FIG. 2 is a side view of a cell of the present invention;
FIG. 3 is a plan view of a fourth dielectric substrate of the present invention;
FIG. 4 is a simulation diagram of S-parameters of the present invention at normal incidence of electromagnetic waves;
FIG. 5 is a simulation diagram of the wave absorption rate of the present invention at normal incidence of electromagnetic waves;
Detailed Description
The present invention is further analyzed with reference to the following specific examples.
The three-dimensional novel broadband wave-absorbing type frequency selection structure is a periodic structure, and each structural unit comprises a band-pass channel and a wave-absorbing channel;
the wave-absorbing channel is composed of a first metal surface 1, a metal reflecting surface 5, a first medium substrate 13, a second medium substrate 14, a third medium substrate 8 (the lower surface is a third metal surface), a first resistor 4, a second resistor 7, a capacitor 3, a first metal wire 2, a second metal wire 6 (equivalent to a capacitor) and a microstrip line 10. The first dielectric substrate 13 is used as an incident surface, the outer side surface of the first dielectric substrate is provided with a first metal wire 2, one end of the first metal wire 2 is connected with the first metal surface 1, and the other end of the first metal wire is connected with a microstrip line 10 of a third dielectric substrate 8; wherein the first metal wire is provided with a capacitor C13 and a first resistor 4; the microstrip line 10 is arranged on the upper surface of the third dielectric substrate 8 and used for connecting the second metal surface 5 and the metal wire 2, and the microstrip line 10 is welded with the second resistor 7; two identical second metal wires 6 (equivalent to a capacitor C2) are arranged on one side of the second dielectric substrate 14 close to the first dielectric substrate 13, metalized through holes 9 are arranged at two ends of the third dielectric substrate 8 at the position where the passband field strength is about the strongest, one end of each second metal wire 6 is connected with the first metal surface 1, and the other end of each second metal wire is connected with the metalized through hole 9 of the third dielectric substrate; the second metal wire 6 is a broken wire structure, a protrusion is arranged at the broken wire part, and the distance between the broken wires and the height of the protrusion influence the size of the capacitor C2.
The transmission channel is composed of a third metal surface, a fourth dielectric substrate 11 and a fourth metal surface 15 on the lower surface of the fourth dielectric substrate, wherein the fourth dielectric substrate 11 is provided with a metalized via hole 16 in the center and a plurality of ordinary via holes 12 in the periphery, and the diameter of the ordinary via holes is larger than that of the metalized via holes.
The invention discloses a novel three-dimensional broadband wave-absorbing frequency selection structure, wherein specific parameters of some structures are as follows: the length of the first metal surface 1 is 30 mm, the width is 14 mm, and the thickness is 0.5 mm; the third metal surface and the fourth metal surface 15 have the same size, and are 30 mm long and 14 mm wide; the first dielectric substrate 13 and the second dielectric substrate 14 are both made of Taconic TLY with the dielectric constant of 2.2, and are both 12.2 mm in height, 14 mm in width and 0.508 mm in thickness; the first dielectric substrate 13 is used as an incident surface, a first metal wire 2 is arranged on the outer side surface of the first dielectric substrate, the width of the first metal wire 2 is 1 mm, the height of the first metal wire 2 is 12.2 mm, a capacitor 3 with 1pF and a resistor 4 with 270 ohms are welded on the wires, one end of the first metal wire 2 is connected with the first metal surface 1, and the other end of the first metal wire is connected with a microstrip line 10 of a third dielectric substrate 8; two identical second metal wires 6 (equivalent to a capacitor C2) are arranged on one side of the second dielectric substrate 14 close to the first dielectric substrate 13, the wire width is 0.5 mm, the second metal wires 6 are of a wire breaking structure, protrusions are arranged at the wire breaking positions, the distance between the broken wires and the height of the protrusions influence the size of the capacitor C2, the height of the middle protruding portion is 1 mm, and the distance between the broken wires is 0.5 mm; the third dielectric substrate 8 is made of Taconic RF-30 with the dielectric constant of 3.3, the length of the third dielectric substrate is 30 mm, the width of the third dielectric substrate is 14 mm, the thickness of the third dielectric substrate is 1.5 mm, metalized through holes 9 are arranged at two ends of the position with the strongest passband field intensity, the diameter of each metalized through hole 9 is 1 mm, one end of each second metal wire is connected with the first metal surface 1, and the other end of each second metal wire is connected with the metalized through hole 9; the microstrip line 10 is arranged on the upper surface of the third dielectric substrate 8, has a width of 2 mm and is used for connecting the metal reflecting surface 5 and the metal wire 2, the microstrip line 10 is welded with the second resistor 7, the resistance value of the microstrip line is 180 ohms, the distance between the second resistor 7 and the second metal surface 5 is 3 mm, and the third metal surface is arranged on the lower surface of the third dielectric substrate; the height of the air between the first metal face 1 and the third dielectric substrate 8 is 12.2 mm. The fourth dielectric substrate 11 is made of Taconic TLY with a dielectric constant of 2.2, and has a length of 30 mm, a width of 14 mm, a thickness of 3 mm, and a lower surface made of a fourth metal surface 15, and the fourth dielectric substrate 11 has a metalized via 16 at the center, the diameter of the metalized via 16 is 1.75 mm, and there are some ordinary vias 12 around the metalized via, the diameter of the via is 3.6 mm, the pitch of the horizontal holes is 1 mm, and the pitch of the vertical holes is 0.6 mm.
Wherein l is the length of the unit structure, w is the width of the unit structure, h is the height of the unit structure, hsAnd hpThe thickness of the third dielectric substrate 8 and the thickness of the fourth dielectric substrate 11, haC is the capacitance of the capacitor 3, and R1 and R2 are the resistances of the first resistor 4 and the second resistor 7, respectively, which are the height of the upper air portion.
As can be seen from the simulation result of the transmission and reflection coefficients of fig. 4, the structure has one pass band and two absorption bands at two sides of the pass band, wherein the frequency range of the low-frequency absorption band is 1.22-2.41GHz, and the relative bandwidth is 65.56%; the frequency range of the high-frequency wave absorption band is 4.09-6.86GHz, and the relative bandwidth is 50.63%; the pass band has a frequency range of 2.92-3.87GHz and a relative bandwidth of 27.98%. The simulation result of figure 5 shows that the wave-absorbing rate of the structure in the wave-absorbing band is up to more than 90%, the wave-absorbing rate in the pass-band is below 15%, and the wave-absorbing effect and the pass-band effect are both more remarkable.
Claims (7)
1. The three-dimensional broadband wave absorption type frequency selection structure is a periodic structure and is characterized in that each structural unit comprises a wave absorption channel and a transmission channel, and specifically comprises a first metal surface, a third medium substrate, a third metal surface, a fourth medium substrate and a fourth metal surface which are sequentially arranged from top to bottom;
an air layer is arranged between the first metal surface and the third medium substrate, the first medium substrate, the second medium substrate and the second metal surface which is used as a reflecting surface are sequentially arranged in the air layer, the first medium substrate, the second medium substrate and the second metal surface are perpendicular to the third medium substrate, and the second medium substrate is positioned at the position where the passband field intensity is strongest;
the outer side of the first medium substrate as an incident surface is provided with a first metal wire, one end of the first metal wire is connected with the first metal surface, and the other end of the first metal wire is connected with a microstrip line of a third medium substrate; wherein, the first metal lead is welded with a capacitor C1 and a first resistor;
two identical second metal wires are arranged on one side, close to the first dielectric substrate, of the second dielectric substrate, one end of each second metal wire is connected with the first metal surface, and the other end of each second metal wire is connected with a metalized through hole of the third dielectric substrate; the second metal wire is of a wire breaking structure, and a bulge is arranged at the wire breaking part; the second metal line is equivalent to a capacitor C2;
the lower surface of the third medium substrate is provided with a third metal surface, and the upper surface of the third medium substrate is provided with a microstrip line; one end of the microstrip line is connected with the second metal surface, and the other end of the microstrip line is connected with the first metal lead; a second resistor is welded on the position, close to the second metal surface, of the microstrip line; the third medium substrate is provided with a first metalized through hole, and two ends of the metalized through hole are respectively connected with the second metal wire and the third metal surface;
the lower surface of the fourth dielectric substrate is provided with a fourth metal surface, a plurality of non-metalized through holes which are periodically distributed and second metalized through holes which are positioned at the position with the minimum pass-band field intensity; the two ends of the non-metallized through hole and the second metallized through hole are respectively connected with the third metal surface and the fourth metal surface;
the wave-absorbing channel consists of a first metal surface, a capacitor C1, a first resistor, a second metal surface, a third medium substrate, a third metal surface, a first metal wire, a second metal wire and a microstrip line;
the transmission channel is composed of a third metal surface, a fourth medium substrate and a fourth metal surface.
2. The three-dimensional broadband wave-absorbing frequency selective structure of claim 1, wherein the gap distance between the second metal lines and the height of the protrusion affect the size of the capacitor C2.
3. The three-dimensional broadband wave-absorbing frequency selective structure according to claim 1, wherein the third and fourth dielectric substrates have the same length and different thicknesses.
4. The three-dimensional broadband wave-absorbing frequency selective structure of claim 1, wherein the air layer height haAnd the resistance value of the second resistor influences the bandwidth.
5. The three-dimensional broadband waveabsorbing frequency selective structure according to claim 1 wherein the capacitance C2 affects the relative position of the pass band.
6. The three-dimensional broadband wave-absorbing frequency selective structure according to claim 1, wherein after the electromagnetic waves enter the wave-absorbing channel, the electromagnetic waves are reflected to form a loop due to the existence of the second metal surface, and induced currents are formed on the microstrip line and the first and second metal leads, and the formed currents are consumed by the first resistor and the second resistor, thereby achieving the wave-absorbing effect; the lower parallel plate composed of the third metal surface and the fourth metal surface is an open resonator, and a passband is generated near the resonant frequency of the open resonator; a second metallized via hole is arranged at the minimum position of the passband field strength of the fourth dielectric substrate and is equivalent to an inductor LpThus, it isAnd a resonant frequency is introduced, and the range of the passband is widened by changing the size of the inductor and related parameters.
7. The three-dimensional broadband wave-absorbing frequency selective structure according to claim 1, applied to a stealthy radome.
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| CN111817010B (en) * | 2020-06-02 | 2022-02-11 | 杭州电子科技大学 | Reflecting band switchable three-dimensional broadband absorption type frequency selection structure |
| CN112332109B (en) * | 2020-10-22 | 2021-06-08 | 西安电子科技大学 | Broadband wave-transmitting type frequency selective wave absorber based on 2.5D structure |
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