CN111029782B - Wave-transparent window switchable absorbing and penetrating integrated material - Google Patents
Wave-transparent window switchable absorbing and penetrating integrated material Download PDFInfo
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- CN111029782B CN111029782B CN201911278013.4A CN201911278013A CN111029782B CN 111029782 B CN111029782 B CN 111029782B CN 201911278013 A CN201911278013 A CN 201911278013A CN 111029782 B CN111029782 B CN 111029782B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
- H01Q15/0006—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
- H01Q15/0086—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices having materials with a synthesized negative refractive index, e.g. metamaterials or left-handed materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q17/00—Devices for absorbing waves radiated from an antenna; Combinations of such devices with active antenna elements or systems
- H01Q17/007—Devices for absorbing waves radiated from an antenna; Combinations of such devices with active antenna elements or systems with means for controlling the absorption
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Abstract
The invention provides a suction and transmission integrated material with a switchable wave-transparent window, and belongs to the technical field of artificial metamaterials. The material realizes that the wave-transmitting band of the absorption-wave-transmitting-absorption type absorption-transmission integrated material in a broadband wave-transmitting range can be switched by designing the composition of the impedance layer and the frequency selection surface layer, and the realization means is simple; the suction and penetration integrated material is formed by combining two-dimensional structures, can be realized by a printed PCB (printed Circuit Board), and is low in cost and simple to process; and the material unit size is less than one sixth wavelength, and the material has the characteristic of miniaturization.
Description
Technical Field
The invention belongs to the technical field of artificial metamaterials, and particularly relates to a suction-transmission integrated material with a switchable wave-transmitting window.
Background
The absorption and penetration integrated material is a novel artificial electromagnetic material and can be used for antenna stealth on military equipment. The antenna housing is made of the absorption and transmission integrated material, wave transmission characteristics are displayed in the working frequency band of the antenna, normal work of the antenna is not affected, wave absorption characteristics are displayed outside the working frequency band of the antenna, electromagnetic waves irradiated by enemy radars are absorbed, the radar scattering cross section of the antenna is reduced, and therefore electromagnetic stealth of the antenna is achieved. Because the working frequency band of the antenna of military equipment has a certain bandwidth, the wave-transmitting frequency band of the absorbing and transmitting integrated material is required to have a certain bandwidth and lower insertion loss. However, the presence of a wave-transparent band also increases the risk of discovery by hostile radar due to the bi-directionality of wave-transparent. When the antenna is off, it is desirable to be able to close the band of transmission of the imbibed bulk material. Such a transparent bulk material whose frequency response can be changed in real time as required is generally referred to as a reconfigurable transparent bulk material. However, the research on the reconfigurable absorption-transmission integrated material at present mainly focuses on narrow-band transmission type materials, i.e. the narrow transmission band is switchable, and due to practical working requirements, the design of the absorption-transmission integrated material with the reconfigurable broadband transmission band is in urgent need to be solved.
Disclosure of Invention
The invention aims to provide a wave-transparent window switchable absorption and transmission integrated material, which realizes the switchable wave-transparent band of an absorption-wave-transparent-absorption type absorption and transmission integrated material in a broadband wave-transparent range by designing the structures of a resistance layer and a frequency selection surface layer, and has simple realization means.
In order to achieve the purpose, the technical scheme of the invention is as follows:
a wave-transparent window switchable absorption and transmission integrated material comprises n x n structural units, wherein each structural unit comprises an impedance layer and a frequency selection surface layer, each impedance layer comprises a first dielectric layer and a first metal layer positioned on the upper surface of the first dielectric layer, each frequency selection surface layer is formed by arranging four basic units according to 2 x 2, and the basic units sequentially comprise a second metal layer, a second dielectric layer, a third metal layer, a third dielectric layer and a fourth metal layer from top to bottom; the first rectangle is slotted at a position close to the interdigital resonance structure and used for welding the resistor; the interdigital resonance structure consists of seven metal strips, two ends of a middle fourth metal strip are connected with the first rectangle, and the distance between the fourth metal strip and the third metal strip as well as the distance between the fourth metal strip and the fifth metal strip are d1The distance between other adjacent metal strips is d2(ii) a The width of the fourth metal strip is a1The width of the other six metal strips is the same and is a2The center of the fourth metal strip is slotted and used for welding a diode; the second metal layer and the third metal layer are both H-shaped, the centers of the symmetrical cross beams of the second metal layer are slotted for welding diodes, and the fourth metal layer is provided with a central slot for welding diodesSlotting along the direction of the I-shaped two arms; the impedance layer and the frequency selection surface layer have the same size, the distance between the impedance layer and the frequency selection surface layer is D, the distance is a quarter wavelength of the center frequency, and the middle filling medium is air.
Further, n is more than or equal to 8.
Further, the length of a fourth metal strip in the interdigital resonance structure in the first metal layer is 5mm, and the width a of the fourth metal strip is10.5mm, a gap width at the center of the fourth metal strip of 0.4mm, a length of the other six metal strips of 3.65mm, a width a2Is 0.2mm, and the distance between the fourth metal strip in the middle of the interdigital resonance structure and the metal strips at the two sides is d11mm, the spacing d between the other adjacent metal strips2Is 0.2 mm; the width of the first rectangle is 5.5mm, and the length of the first rectangle is 10 mm; the gap distance on the first rectangle is 2mm, and the gap width is 0.5 mm; the length of the second rectangle is 30mm, and the width of the second rectangle is 1 mm; the thickness of the first medium layer is 0.254mm, and the size is 30mm multiplied by 30 mm.
Further, the distance D between the impedance layer and the frequency selective surface layer is 18 mm.
Further, the size of the basic unit is 15mm × 15mm, wherein the length and the width of the two parallel arms of the second metal layer are both 15mm and 6.25mm, the length and the width of the symmetrical beam are 2.5mm and 0.5mm, and the width of the gap at the center of the symmetrical beam is 0.4 mm; the length and the width of the two parallel arms of the third metal layer are both 15mm and 3mm, and the length and the width of the symmetrical cross beam are 9mm and 6mm respectively; the width of the gap in the fourth metal layer is 0.88mm, and the length of the gap in the fourth metal layer is 15 mm; the thickness of the second dielectric layer and the third dielectric layer is 1.524mm, and the size is 15mm multiplied by 15 mm.
Further, the resistance value of the welding at the gap of the first metal layer is 100 Ω.
Further, the materials of the first metal layer, the second metal layer, the third metal layer and the fourth metal layer may be copper, gold, silver, etc., and the materials of the first dielectric layer, the second dielectric layer and the third dielectric layer are all Rogers RO 4350B.
In summary, due to the adoption of the technical scheme, the invention has the beneficial effects that:
1. according to the invention, the frequency selection layer and the impedance layer are respectively provided with the diode, the conduction or the disconnection of the diodes is controlled through the direct current feed, and the wave-transparent window of the absorption and transmission integrated material is further controlled to be opened or closed, so that the implementation means is simple.
2. Due to the unique structural design of the absorption and transmission integrated material, when the wave transmission window is opened, the absorption and transmission integrated material can transmit waves within the range of 3.72-4.25 GHz, and the wave transmission band is wide; absorbing waves in the ranges of 1.51-3.30 GHz and 4.53-6.42 GHz, and having broadband wave-absorbing property; the transition zone from the wave absorbing zone to the transparent zone is narrow; when the wave-transmitting window is closed, the reflection coefficient S11 is smaller than-10 dB and the transmission coefficient S21 is smaller than-10 dB within the range of 2.00-5.55 GHz, and wave-absorbing characteristics are displayed.
3. The suction and penetration integrated material designed by the invention is formed by combining two-dimensional structures, can be realized by a printed PCB (printed Circuit Board), and has low cost and simple processing; and the material unit size is less than one sixth wavelength, and the material has the characteristic of miniaturization.
Drawings
FIG. 1 is a schematic view of a structural unit of the wicking monolithic material of the present invention.
Fig. 2 is a schematic structural diagram of a first metal layer in a resistance layer.
Fig. 3 is a schematic view of the structure of the frequency selective surface layer.
FIG. 4 is a schematic view showing the arrangement of the structural units of the integrated absorbent material of the present invention at 3X 3.
FIG. 5 is a graph showing the simulation result of the frequency response of the integrated absorption-permeation material of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention will be described in further detail with reference to the following embodiments and accompanying drawings.
A wave-transparent window switchable absorbing and transmitting integrated material comprises n x n structural units, wherein the structural units are shown in figure 1 and comprise a resistance layer 1 and a frequency selection surface layer 6, the distance D between the resistance layer and the frequency selection surface layer is 18mm, and air is arranged in the middle; the impedance layer comprises a first dielectric layer 5 and a first metal layer 2 positioned on the upper surface of the first dielectric layer, the thickness of the first dielectric layer 5 is 0.254mm, the size is 30mm multiplied by 30mm, and the material is Rogers RO 4350B; the frequency selective surface layer is formed by arranging four basic units according to 2 multiplied by 2, and the size of the basic units is 15mm multiplied by 15 mm;
the structure of the first metal layer is shown in fig. 2, the center of the first metal layer is an interdigital resonance structure 7, two ends of the interdigital resonance structure are respectively connected with a first rectangle 8, the length of the first rectangle is 10mm, and the width of the first rectangle is 5.5 mm; the other end of the first rectangle is positioned on a perpendicular line in the long side of a second rectangle 9, the length of the second rectangle is 30mm, and the width of the second rectangle is 1 mm; the first rectangle is provided with a seam 10 at a position 2mm away from the interdigital resonance structure, the width of the seam is 0.5mm, the seam is used for welding a resistor, and a 100-ohm resistor 3 packaged by 0402 is selected during actual welding; the interdigital resonance structure consists of seven metal strips, one end of the interdigital resonance structure is sequentially connected with the first rectangle from left to right, the two ends of the middle fourth metal strip are connected with the first rectangle, and the distances between the fourth metal strip and the third metal strip as well as between the fourth metal strip and the fifth metal strip are equal to d11mm, the spacing d between the other adjacent metal strips2Is 0.2 mm; the length of the fourth metal strip is 5mm, and the width a1Is 0.5mm, the other six metal strips have the same length of 3.65mm and width a2The width of a slit is 0.4mm, the width of the slit is used for welding a diode, and the type of the diode 4 is SMP1345 when the diode is actually welded;
the frequency selective surface layer 6 is formed by arranging four basic units according to 2 × 2, and the basic units are sequentially a second metal layer 11, a second dielectric layer 13, a third metal layer 14, a third dielectric layer 15 and a fourth metal layer 16 from top to bottom as shown in fig. 3; the length of two parallel arms of the I-shaped second metal layer is 15mm, the width of the two parallel arms is 6.25mm, the length of the symmetrical beam is 2.5mm, the width of the symmetrical beam is 0.5mm, the width of a gap at the center of the symmetrical beam is 0.4mm, the I-shaped second metal layer is used for welding a diode, and a diode 12 with the model number of SMP1345 is selected during actual welding; the length of two parallel arms of the I-shaped third metal layer is 15mm, the width of the two parallel arms is 3mm, and the length and the width of the symmetrical cross beam are 9mm and 6 mm; the width of the gap in the fourth metal layer is 0.88mm, and the length of the gap in the fourth metal layer is 15 mm; the thickness of the second dielectric layer and the third dielectric layer is 1.524mm, the size is 15mm multiplied by 15mm, and the material is Rogers RO 4350B.
The materials of the first metal layer, the second metal layer, the third metal layer and the fourth metal layer are all the same, and copper is actually adopted; the first metal layer and the second metal layer have a direct current feed network function, and the diode 4 and the diode 12 are electrically connected with the metal layer having the direct current feed network function.
The above dimensions are all specified dimensions calculated and optimized, and the suction/permeation effect is deteriorated if the dimensions are changed.
Fig. 4 is a schematic diagram of the arrangement of the cells of the integral absorbing and transmitting material according to 3 × 3, diodes and resistors are omitted, and the number of the actual material cells is more than 8 × 8 in order to ensure the effect.
The wave-transparent integrated material is divided into two states of opening and closing a wave-transparent window. When the diode at the center of the interdigital resonance structure of the impedance layer is conducted and the diode at the frequency selection surface layer is turned off, the impedance layer is in the open state of the wave-transparent window. When the electromagnetic wave vertically enters from the upper part of the impedance layer, the frequency selection surface layer is equivalent to a space band-pass filter, and the wave transmission characteristic is displayed within the range of 3.72-4.25 GHz. The interdigital resonance structure at the center of the impedance layer is equivalent to a capacitance-inductance resonance circuit, the resonance frequency point is 4GHz and is within the range of 3.72-4.25 GHz, and due to the existence of the resonance circuit, the impedance layer also shows the wave-transmitting characteristic, so that the absorbing and transmitting integrated material is wave-transmitting within the range of 3.72-4.25 GHz (S21 is more than or equal to-1 dB). In addition, the frequency selective surface is provided with three layers of metal structures, which is equivalent to a three-order filter, and the wave-transmitting frequency band rectangularity is better, so that the wave-transmitting frequency band rectangularity of the absorption-transmission integrated material is also better, and the range of a transition band from a wave-absorbing band to a wave-transmitting band is reduced. In the range of 1.51-3.30 GHz and 4.53-6.42 GHz, the first rectangle of the impedance layer is equivalent to an inductor, the gap between the second rectangles of two adjacent units is equivalent to a capacitor, and a resistor is welded to form a resistor-inductor-capacitor series circuit. By adjusting the parameter value of the series circuit, the impedance characteristic of the series circuit can be well matched with air; at the moment, the frequency selection surface shows total reflection characteristics, the frequency selection surface and the upper impedance layer are combined to form a circuit simulation absorber, the electric field intensity of the position of the impedance layer is enhanced, the strong electric field excites current in the impedance layer, the current can be absorbed by the resistor when flowing through the resistor, the electric energy is converted into heat energy to be dissipated, and the wave absorbing effect is realized (S11 is less than or equal to-10 dB and S21 is less than or equal to-10 dB).
When the diode in the center of the impedance layer is disconnected and the diode in the frequency selection surface layer is conducted, the wave-transparent window is in a closed state. At this time, the frequency selection surface is equivalent to a metal floor within the range of 2.00 to 5.55GHz, and shows the total reflection characteristic. The interdigital resonance structure at the center of the impedance layer is damaged, and the impedance layer is equivalent to a resistor-inductor-capacitor series circuit within the range of 2.00-5.55 GHz. By adjusting the parameter value of the series circuit, the impedance characteristic thereof can be well matched with air. At the moment, the frequency selection surface shows total reflection characteristics, the frequency selection surface and the upper impedance layer are combined to form a circuit simulation absorber, the electric field intensity of the position of the impedance layer is enhanced, the strong electric field excites current in the impedance layer, the current can be absorbed by the resistor when flowing through the resistor, the electric energy is converted into heat energy to be dissipated, and the wave absorbing effect is realized (S11 is less than or equal to-10 dB and S21 is less than or equal to-10 dB).
As shown in fig. 5, electromagnetic simulation was performed with electromagnetic waves incident parallel to the rectangular structure of the resistive layer, with frequency on the abscissa and S-parameter on the ordinate. When the wave-transparent window is opened, S21 is larger than-1 dB within the range of 3.72-4.25 GHz, and wave-transparent characteristics are displayed. In the ranges of 1.51-3.30 GHz and 4.53-6.42 GHz, S11 is less than-10 dB, and S21 is less than-10 dB, so that the wave-absorbing characteristic is displayed; the transition bandwidth between the transmission band and the left absorption band is 3.30-3.72 GHz, the transition bandwidth between the transmission band and the right absorption band is 4.25-4.53 GHz, and the transition band is narrow. When the wave-transmitting window is closed, in the range of 2.00-5.55 GHz, S11 is smaller than-10 dB, and S21 is smaller than-10 dB, so that the wave-absorbing characteristic is displayed. The size of the absorption and permeation integrated material is 30mm multiplied by 30mm, the maximum working wavelength is 198mm, the unit size is less than one sixth wavelength, and the absorption and permeation integrated material has the characteristic of miniaturization.
While the invention has been described with reference to specific embodiments, any feature disclosed in this specification may be replaced by alternative features serving the same, equivalent or similar purpose, unless expressly stated otherwise; all of the disclosed features, or all of the method or process steps, may be combined in any combination, except mutually exclusive features and/or steps.
Claims (7)
1. A wave-transparent window switchable absorption and transmission integrated material comprises n x n structural units, wherein each structural unit comprises an impedance layer and a frequency selection surface layer, each impedance layer comprises a first dielectric layer and a first metal layer positioned on the upper surface of the first dielectric layer, each frequency selection surface layer is formed by arranging four basic units according to 2 x 2, and the basic units sequentially comprise a second metal layer, a second dielectric layer, a third metal layer, a third dielectric layer and a fourth metal layer from top to bottom; the first rectangle is slotted at a position close to the interdigital resonance structure and used for welding the resistor; the interdigital resonance structure consists of seven metal strips, two ends of a middle fourth metal strip are connected with the first rectangle, and the distance between the fourth metal strip and the third metal strip as well as the distance between the fourth metal strip and the fifth metal strip are d1The distance between other adjacent metal strips is d2(ii) a The width of the fourth metal strip is a1The width of the other six metal strips is the same and is a2The center of the fourth metal strip is slotted and used for welding a diode; the second metal layer and the third metal layer are both in an I shape, the centers of symmetrical cross beams of the second metal layer are slotted for welding diodes, and the middle of the fourth metal layer is slotted along the direction of two arms of the I shape; the impedance layer and the frequency selection surface layer have the same size, the distance between the impedance layer and the frequency selection surface layer is D, the distance is a quarter wavelength of the center frequency, and the middle filling medium is air.
2. The switchable transmission integrated material of the wave-transparent window of claim 1, wherein n is greater than or equal to 8.
3. As claimed in claim 1The absorbing and transmitting integrated material with the switchable wave-transmitting window is characterized in that the length of a fourth metal strip in the interdigital resonance structure in the first metal layer is 5mm, and the width a of the fourth metal strip is10.5mm, a gap width at the center of the fourth metal strip of 0.4mm, a length of the other six metal strips of 3.65mm, a width a2Is 0.2mm, and the distance between the fourth metal strip in the middle of the interdigital resonance structure and the metal strips at the two sides is d11mm, the spacing d between the other adjacent metal strips2Is 0.2 mm; the width of the first rectangle is 5.5mm, and the length of the first rectangle is 10 mm; the gap distance on the first rectangle is 2mm, and the gap width is 0.5 mm; the length of the second rectangle is 30mm, and the width of the second rectangle is 1 mm; the thickness of the first medium layer is 0.254mm, and the size is 30mm multiplied by 30 mm.
4. The switchable wave-transparent window of claim 1 wherein the distance D between the impedance layer and the frequency selective surface layer is 18 mm.
5. The switchable transmission integrated material of claim 1, wherein the basic unit has a size of 15mm x 15mm, wherein the length and width of the two parallel arms of the second metal layer are both 15mm and 6.25mm, the length and width of the symmetrical beam are 2.5mm and 0.5mm, and the gap width at the center of the symmetrical beam is 0.4 mm; the length and the width of the two parallel arms of the third metal layer are both 15mm and 3mm, and the length and the width of the symmetrical cross beam are 9mm and 6mm respectively; the width of the gap in the fourth metal layer is 0.88mm, and the length of the gap in the fourth metal layer is 15 mm; the thickness of the second dielectric layer and the third dielectric layer is 1.524mm, and the size is 15mm multiplied by 15 mm.
6. The switchable transmission integrated material of claim 1, wherein the resistance value of the welding at the gap of the first metal layer is 100 Ω.
7. The switchable transmission integrated material of claim 1, wherein the materials of the first metal layer, the second metal layer, the third metal layer and the fourth metal layer are copper, gold or silver, and the materials of the first dielectric layer, the second dielectric layer and the third dielectric layer are Rogers RO 4350B.
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| CN111817010B (en) * | 2020-06-02 | 2022-02-11 | 杭州电子科技大学 | Reflecting band switchable three-dimensional broadband absorption type frequency selection structure |
| CN112510376A (en) * | 2020-11-20 | 2021-03-16 | 航天特种材料及工艺技术研究所 | Passband reconfigurable absorption/transmission integrated frequency selection surface and basic unit |
| CN112928491B (en) * | 2021-01-13 | 2022-03-15 | 电子科技大学 | Ultra-wideband wave-absorbing dual-polarized switchable anti-absorption integrated material |
| CN113708080B (en) * | 2021-09-03 | 2022-07-29 | 南京大学 | Efficient phase dynamically adjustable reflection super-structure surface |
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| CN107611622A (en) * | 2017-09-27 | 2018-01-19 | 中国人民解放军国防科技大学 | Double-side-frequency broadband wave absorber with controllable pass band |
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| US7639206B2 (en) * | 2008-05-05 | 2009-12-29 | University Of Central Florida Research Foundation, Inc. | Low-profile frequency selective surface based device and methods of making the same |
| JP5308782B2 (en) * | 2008-11-13 | 2013-10-09 | 藤森工業株式会社 | Method for producing frequency selective electromagnetic shielding material, and electromagnetic wave absorber using the same |
| CN207250729U (en) * | 2017-09-27 | 2018-04-17 | 中国人民解放军国防科技大学 | Double-side-frequency broadband wave absorber with controllable pass band |
| CN110247196B (en) * | 2019-06-20 | 2021-02-12 | 南京航空航天大学 | Frequency selective wave absorber for medium-frequency broadband wave transmission, high-frequency wave absorption and low-frequency wave absorption |
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| WO2010092390A1 (en) * | 2009-02-13 | 2010-08-19 | University Of Kent | Tuneablefrequency selective surface |
| CN107611622A (en) * | 2017-09-27 | 2018-01-19 | 中国人民解放军国防科技大学 | Double-side-frequency broadband wave absorber with controllable pass band |
| JP2019122012A (en) * | 2018-01-11 | 2019-07-22 | 三菱電機株式会社 | Frequency selection board and electronic circuit |
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