CN116683193B - Frequency selective wave absorbing device with multiple switchable wave-transparent windows - Google Patents
Frequency selective wave absorbing device with multiple switchable wave-transparent windows Download PDFInfo
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- CN116683193B CN116683193B CN202310822246.6A CN202310822246A CN116683193B CN 116683193 B CN116683193 B CN 116683193B CN 202310822246 A CN202310822246 A CN 202310822246A CN 116683193 B CN116683193 B CN 116683193B
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- 238000010521 absorption reaction Methods 0.000 abstract description 14
- 239000010410 layer Substances 0.000 description 119
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
- H01Q15/0006—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
- H01Q15/0013—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective
- H01Q15/002—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective said selective devices being reconfigurable or tunable, e.g. using switches or diodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/42—Housings not intimately mechanically associated with radiating elements, e.g. radome
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
- H01Q15/0006—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
- H01Q15/0013—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective
- H01Q15/0026—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective said selective devices having a stacked geometry or having multiple layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q17/00—Devices for absorbing waves radiated from an antenna; Combinations of such devices with active antenna elements or systems
- H01Q17/007—Devices for absorbing waves radiated from an antenna; Combinations of such devices with active antenna elements or systems with means for controlling the absorption
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K9/00—Screening of apparatus or components against electric or magnetic fields
- H05K9/0073—Shielding materials
- H05K9/0081—Electromagnetic shielding materials, e.g. EMI, RFI shielding
- H05K9/0088—Electromagnetic shielding materials, e.g. EMI, RFI shielding comprising a plurality of shielding layers; combining different shielding material structure
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D30/00—Reducing energy consumption in communication networks
- Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks
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- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Waveguide Switches, Polarizers, And Phase Shifters (AREA)
Abstract
The application discloses a frequency selective wave absorbing device with a plurality of switchable wave transmission windows, which comprises an active multi-passband resistive layer and an active multi-passband transmission layer positioned below the active multi-passband resistive layer, wherein the active multi-passband resistive layer and the active multi-passband transmission layer are fixed through nonmetal posts, so that an air layer is formed between the active multi-passband resistive layer and the active multi-passband transmission layer; the active multi-passband resistive layer comprises a first dielectric plate (3) and a plurality of bandstop frequency selective surface units (2) arranged above the first dielectric plate (3); the active multi-passband transmission layer comprises a second dielectric plate (5) and a plurality of bandpass frequency selective surface units (4) arranged above the second dielectric plate (5). According to the application, the wave-transmitting windows of a plurality of working frequency bands can be switched according to actual needs, and broadband external interference signals can be restrained in an absorption mode while good transmission is carried out in a plurality of working frequency bands.
Description
Technical Field
The present application relates to a frequency selective wave absorbing device, and more particularly, to a frequency selective wave absorbing device having a plurality of switchable wave transparent windows.
Background
With the rapid development of modern communication technology, the communication requirements of equipment for a plurality of frequency bands are more and more diversified, so that higher design requirements are put forward for protective materials such as radomes and the like. These materials need to have a wave-transparent function in a plurality of frequency bands to realize good signal transmission; meanwhile, under the non-working state of the equipment, out-of-band radio frequency interference can be absorbed, and the problem of electromagnetic compatibility caused by signal reflection of the metal structure of the equipment is avoided.
In radome design, the frequency selective wave absorbing structure has obvious advantages, because it has both wave absorbing and wave transmitting functions. However, the existing design method can only regulate and control a single wave-transparent window in the wave-absorbing band, and cannot meet the requirement of multiple wave-transparent windows.
Disclosure of Invention
The application aims to overcome the defects of the prior art, and provides a frequency selective wave absorbing device with a plurality of switchable wave-transmitting windows, which can switch the wave-transmitting windows of a plurality of working frequency bands according to actual needs, well transmit in a plurality of working frequency bands and simultaneously inhibit broadband external interference signals in an absorbing mode.
The aim of the application is realized by the following technical scheme: the frequency selective wave absorbing device comprises an active multi-passband resistive layer and an active multi-passband transmission layer positioned below the active multi-passband resistive layer, wherein the active multi-passband resistive layer and the active multi-passband transmission layer are fixed through nonmetal posts, so that an air layer is formed between the active multi-passband resistive layer and the active multi-passband transmission layer;
the active multi-passband resistive layer comprises a first dielectric plate and a plurality of bandstop frequency selective surface units arranged above the first dielectric plate;
the active multi-passband transmission layer includes a second dielectric plate and a plurality of bandpass frequency selective surface elements disposed over the second dielectric plate.
The beneficial effects of the application are as follows: the application can switch the wave-transmitting windows of a plurality of working frequency bands according to actual needs, well transmit in a plurality of working frequency bands and simultaneously inhibit broadband external interference signals in an absorption mode
Drawings
FIG. 1 is a schematic view of the apparatus of the present application;
FIG. 2 is a schematic diagram of a bandstop frequency selective surface unit;
FIG. 3 is a schematic diagram of a resistive layer stripline cell;
FIG. 4 is a schematic diagram of a bandpass frequency selective surface unit;
FIG. 5 is a schematic diagram of a transmission layer stripline cell;
FIG. 6 is a schematic diagram of the relationship between the diode switch state and the embedded resonant pole position;
FIG. 7 is a graph showing S-parameters and absorption frequency response curves of an active resistive layer in dual-band and single-band modes, respectively;
FIG. 8 is a graph showing the frequency response of S-parameters of an active transport layer in dual-band and single-band modes;
FIG. 9 is a diagram showing simulation results of transmission-reflection coefficients under different switching states.
Detailed Description
The technical solution of the present application will be described in further detail with reference to the accompanying drawings, but the scope of the present application is not limited to the following description.
As shown in fig. 1, a frequency selective wave absorbing device with a plurality of switchable wave transmission windows comprises an active multi-passband resistive layer and an active multi-passband transmission layer positioned below the active multi-passband resistive layer, wherein the active multi-passband resistive layer and the active multi-passband transmission layer are fixed through nonmetal posts, so that an air layer is formed between the active multi-passband resistive layer and the active multi-passband transmission layer;
the active multi-passband resistive layer comprises a first dielectric plate 3 and a plurality of bandstop frequency selective surface units 2 arranged above the first dielectric plate 3;
the active multi-passband transmission layer comprises a second dielectric plate 5 and a plurality of bandpass frequency selective surface units 4 arranged above the second dielectric plate 5.
In the embodiment of the present application, the number of band-pass frequency selective surface units 4 is the same as that of band-stop frequency selective surface units 2, and each band-stop frequency selective surface unit 2 corresponds to one band-pass frequency selective surface unit 4.
The band-stop frequency selective surface unit 2 as shown in fig. 2 includes 4 block metal layers which are sequentially arranged and aligned left and right, wherein an upper edge of a first block metal layer is aligned with a rear side edge of the first dielectric plate 3, and a lower edge of a fourth block metal layer is aligned with a front side edge of the first dielectric plate 3;
the first block metal layer is connected with the second block metal layer through a first chip resistor 9, the second block metal layer is connected with the third block metal layer through a first chip capacitor 10, and the third block metal layer is connected with the fourth block metal layer through a second chip resistor 11;
a first opening with a rightward opening is further formed in the first block-shaped metal layer, a first metal patch 8 is arranged in the first opening, the upper end of the first metal patch 8 is connected with the first block-shaped metal layer through a first PIN diode 12, and the lower end of the first metal patch is connected with the first block-shaped metal layer through a second patch capacitor 13; a second metal patch 14 is further arranged on the right side of the first metal patch 8, and the second metal patch 14 is connected with the first metal patch 8 through a choke inductance;
a second opening penetrating through the left side and the right side of the metal layer is formed in the fourth block metal layer, the second opening divides the fourth block metal layer into an upper layer and a lower layer, and a first bending strap line 21 for connecting the upper layer and the lower layer of the fourth block metal layer is arranged on the left side of the second opening; a third metal patch 16 is arranged in the second opening, the upper end of the third metal patch 16 is connected with a fourth block-shaped metal layer through a second PIN diode 17, and the lower end of the third metal patch 16 is connected with the fourth block-shaped metal layer through a third patch capacitor 18; a fourth metal patch 19 is further arranged on the right side of the third metal patch 16, and the fourth metal patch 19 is connected with the third metal patch 16 through a choke inductance;
the first dielectric plate 3 is also symmetrically provided with a first metal strap and a second metal strap which are connected to two sides of the first massive metal layer, and the first metal strap 6 and the second metal strap 7 are embedded with two choke inductors; the choke inductor embedded in the first metal strap wire 6 is symmetrical to the choke inductor embedded in the second metal strap wire 7; the upper edges of the first metal strap 6 and the second metal strap 7 are in the same line as the upper edge of the first bulk metal layer.
In the embodiment of the present application, the band-stop frequency selective surface units 2 are sequentially arranged from left to right along the first dielectric plate 3, and the band-stop frequency selective surface units 2 are sequentially connected to each other:
the first metal strip 6 comprised by each band stop frequency selective surface unit 2 is connected to the second metal strip of the last band stop frequency selective surface unit 2 except for the first band stop frequency selective surface unit 2;
as shown in fig. 3, the active multi-passband resistive layer further includes a plurality of resistive layer stripline units disposed under the first dielectric plate 3, each resistive layer stripline unit corresponding to one of the bandstop frequency selective surface units 2;
each resistive layer strip line unit comprises a third strip line 23 and a fourth strip line 24 which are perpendicular to the arrangement direction of the bulk metal layers, and three choke coils are respectively embedded in the third strip line 23 and the fourth strip line 24;
the third metal strap 23 is located right below the second metal patch 14, and the first dielectric plate 3 is provided with a first metal via 15 penetrating through the second metal patch 14, the first dielectric plate 3 and the third metal strap 23;
the fourth metal strap 24 is located directly below the fourth metal patch 19, and the first dielectric plate 3 is provided with a second metal via hole 20 penetrating through the fourth metal patch 19, the first dielectric plate 3 and the fourth metal strap 24.
Likewise, the respective resistive layer stripline units are connected in sequence, i.e., the third metal stripline 23 of each resistive layer stripline unit is connected with the third metal stripline 23 of the last resistive layer stripline unit except for the first resistive layer stripline unit; the fourth metal strap 24 of each resistive layer strap unit is connected to the fourth metal strap 24 of the last resistive layer strap unit.
As shown in fig. 4, the band-pass frequency selective surface unit 4 includes two rectangular metal strip lines 25 which are identical in structure and parallel to each other, an upper edge of the rectangular metal strip line 25 is aligned with a rear side edge of the first dielectric plate 3, and a lower edge of the rectangular metal strip line 25 is aligned with a front side edge of the first dielectric plate 3;
a fifth metal strip line 26 is arranged between the two rectangular metal strip lines 25, one end of the fifth metal strip line 26 is connected with the first rectangular metal strip line through a choke inductor, and the other end of the fifth metal strip line 26 is connected with the second rectangular metal strip line through the choke inductor; wherein the left side of the first rectangular metal strip line is connected with a sixth metal strip line 27 through a choke inductor; the right side of the second rectangular metal strip line is connected with a seventh metal strip line 28 through a choke inductance; the upper edges of the fifth metal strip line 26, the sixth metal strip line 27 and the seventh metal strip line 28 are on the same line as the upper edges of the rectangular metal strip line 25.
A third opening and a fourth opening are arranged on the rectangular metal strip line 25, and the fourth opening is positioned below the third opening;
the opening direction of the third opening is rightward, a fifth metal patch 29 is arranged in the third opening, the upper end of the fifth metal patch 29 is connected with the rectangular metal strip line 25 through a third PIN diode 30, and the lower end of the fifth metal patch 29 is connected with the rectangular metal strip line 25 through a fourth patch capacitor 31; a sixth metal patch 32 is further arranged on the right side of the fifth metal patch 29, and the fifth metal patch 29 and the sixth metal patch 32 are connected through a choke inductance;
the fourth opening is an opening on the left and right sides of the rectangular metal strip line 25, the opening divides the rectangular metal strip line 25 into an upper layer and a lower layer, and the left side of the fourth opening is provided with a second bending strip line 36 for connecting the upper layer and the lower layer of the rectangular metal strip line 25; a seventh metal patch 33 is arranged in the fourth opening, the upper end of the seventh metal patch 33 is connected with the rectangular metal strip line 25 through a fourth PIN diode 34, the lower end of the seventh metal patch 33 is connected with the rectangular metal strip line 25 through a fifth patch capacitor 35, an eighth metal patch 37 is further arranged on the right side of the seventh metal patch 33, and the eighth metal patch 37 is connected with the seventh metal patch 33 through a choke inductance.
The band-pass frequency selective surface units 4 are arranged in sequence from left to right along the second dielectric plate 5, and the band-pass frequency selective surface units 4 are connected in sequence, namely, the sixth metal strip line 27 of each band-pass frequency selective surface unit 4 is connected with the seventh metal strip line 28 of the last band-pass frequency selective surface unit 4 except the first band-pass frequency selective surface unit 4;
the active multi-passband transmission layer further comprises a plurality of transmission layer stripline elements arranged below the second dielectric plate 5, each transmission layer stripline element corresponding to one bandpass frequency selective surface element 4.
As shown in fig. 5, the transmission layer stripline unit includes two stripline units, each corresponding to one rectangular metal stripline 25 in the band pass frequency selective surface unit 4;
the first strip line unit comprises an eighth strip line 38 and a ninth strip line 39, and the eighth strip line 38 and the ninth strip line 39 are embedded with two choke inductors;
the eighth metal strap 38 is located directly under the sixth metal patch 32 in the corresponding rectangular metal strip line 25; the second dielectric plate 5 is provided with a third metal via 40 penetrating the sixth metal patch 32, the second dielectric plate 5 and the eighth metal strap 38;
the ninth metal strap 39 is located directly below the eighth metal patch 37 in the corresponding rectangular metal strip 25, and the second dielectric plate 5 is provided with a fourth metal via 41 penetrating the eighth metal patch 37, the second dielectric plate 5 and the ninth metal strap 39;
in the transmission layer stripline unit, the eighth stripline 38 of the two stripline units is connected, and the ninth stripline 39 of the two stripline units is connected.
Likewise, the individual transmission layer stripline units are connected in sequence, i.e., the eighth stripline 38 of the first one of each transmission layer stripline unit is connected to the eighth stripline 38 of the second one of the last transmission layer stripline unit, except for the first one; the ninth metal strap 39 of the first one of each of the transmission layer strap units is connected to the ninth metal strap 39 of the second one of the last transmission layer strap units;
in the embodiment of the application, the PIN tubes in the band-stop frequency selective surface unit 2 and the corresponding band-pass frequency selective surface unit 4 keep synchronous switching, namely the first PIN diode 12 in the band-stop frequency selective surface unit 2 keeps synchronous switching with the third PIN diode 30 embedded by each rectangular metal strip line 25 in the band-pass frequency selective surface unit 4; the second PIN diode 17 of the band-stop frequency selective surface unit 2 is kept on and off synchronously with the fourth PIN diode 34 embedded in each rectangular metal strip line 25 in the band-pass frequency selective surface unit 4;
in this embodiment, the PIN diodes in the different band-stop frequency selective surface units 2 are kept on-off synchronously, i.e. the first PIN diode 12 in each band-stop frequency selective surface unit 2 is kept on-off synchronously, and the second PIN diode 17 in each band-stop frequency selective surface unit 2 is kept on-off synchronously;
on the basis, it is available that the third PIN diode 30 embedded in the rectangular metal strip line 25 in each band-pass frequency selective surface unit 4 is also kept on-off synchronously; the fourth PIN diode 34 embedded in the rectangular metal strip line 25 in each band pass frequency selective surface unit 4 is also kept on and off synchronously.
In practice, the bandstop frequency selective surface unit 2 has four states, which are determined by the on and off of the first PIN diode 12 and the second PIN diode 17, respectively:
namely, the first PIN diode 12 and the second PIN diode 17 are simultaneously disconnected, the first PIN diode 12 and the second PIN diode 17 are simultaneously conducted, the first PIN diode 12 is conducted, the second PIN diode 17 is disconnected, the first PIN diode 12 is disconnected, and the second PIN diode 17 is conducted;
considering the first opening and all devices in the first opening (including the left side wall of the first opening) as one high frequency resonator, the first PIN diode as the control device of the high frequency resonator, and the second opening and all devices in the opening (including the first bending strap 21) as one low frequency resonator, the second PIN diode as the control device of the low frequency resonator; by switching the control level of the PIN, the impedance state of the high/low frequency embedded resonator is switched, so that the pass band state (the wave-transparent window switch state) is switched. When the reactance pole is generated by embedding the resonator, the absorption resonance current is cut off, so that a passband is generated, namely the opening of the wave-transmitting window, and when the reactance value of the embedded resonator is lower, the influence on the absorption resonance current is smaller, so that the incoming wave is absorbed, and the passband is not generated, namely the opening of the wave-transmitting window;
since the band-stop frequency selective surface unit 2 is kept on and off synchronously with the PIN tubes in the corresponding band-pass frequency selective surface unit 4, the respective band-pass frequency selective surface unit 4 is kept on and off synchronously with the wave-transparent window switch of the band-stop frequency selective surface unit 2,
the PIN tubes of the band-stop frequency selection surface units 2 are kept synchronous, so that the wave-transmitting windows of the units of the whole wave-absorbing device are also kept synchronous, and wave-absorbing control of the whole device can be realized based on a wave-transmitting window switch by controlling the on-off of the PIN tubes, thereby realizing frequency selection;
that is, the application realizes the switching of a plurality of wave-transparent windows by adjusting the bias state of PIN tubes of each unit on the absorption layer (active multi-passband resistive layer) and the transmission layer (active multi-passband resistive layer) of the wave-absorbing device. When the wave-transmitting window is opened, the window is high-efficient in wave transmission; when the wave-transparent window is closed, the window presents a wave-absorbing state.
The structure of the application is formed by the cascade of an active multi-passband resistive layer and an active multi-passband transmission layer through an air matching layer. The resistive layer is used for absorbing out-of-band incoming waves and simultaneously controllably transmitting useful signals of a plurality of wave-transparent windows; the transmission layer is used for reflecting the incoming waves outside the band, and is used for jointly acting with the resistive layer, so that the wave absorbing performance is improved, and meanwhile useful signals of a plurality of wave-transmitting windows can be controllably transmitted. The resistive layer is typically based on a band-reject frequency selective surface cell structure loaded with lumped resistance, while the transmission layer is based on a band-pass frequency selective surface cell structure. The two layers are respectively and independently designed by adopting a band-stop or band-pass structure, and pass bands are adjusted to be consistent through parameter adjustment, so that the construction of a wave-transmitting window in a wave-absorbing band is realized. While this discrete design approach has many limitations, it is often difficult to precisely match multiple pass bands with different resonant cell options (band-stop/band-pass), and if the switch design of multiple pass bands is considered, the discrete design approach makes the pass-band matching design more complex. The application allows loss cancellation wherein the transport layer has a basic structure as shown in fig. 2 and 3. Both layers are structured as a uniform metal strip unit, wherein the resistive layer is loaded with two lumped resistances (chip resistances) in the strip and a central coupling capacitance (realized by the lumped capacitances) for building up an absorption resonance. And compared with the resistive layer, the transmission layer is removed from the central coupling capacitance and the lumped resistance required for constructing the absorption resonance, and meanwhile, in order to enhance the out-of-band reflection capability of the transmission layer, the x-direction period of the transmission layer is halved so as to achieve the effect of improving the wave absorbing performance.
A resistive layer and a transport layer of the same stripe configuration. The advantage of the strip configuration is its polarization selectivity, i.e. the frequency selective wave absorbing effect for electromagnetic waves whose polarization direction is parallel to the metal strip (y-direction in fig. 2). And exhibits a full wave-transparent effect for electromagnetic waves in the orthogonal direction (x-direction in fig. 2). The method provided by the application enables the design of the frequency selective wave absorber to be more flexible. For the application requirement of dual polarization, dual polarization characteristics can be realized by orthogonally placing two groups of frequency selective wave absorbers;
to build a uniform passband, the individual elements of the resistive and transmission layers are loaded with uniform high/low frequency resonators. The PIN diode is integrated as an active control device in the embedded resonator, and the switching of the impedance state of the high/low frequency embedded resonator is realized by switching the control level of the PIN, thereby realizing the switching of the passband state (the transom switch state). When the reactance value of the embedded resonator is lower, the influence on the absorption resonance current is smaller, so that the absorption of incoming waves, namely the turn-off of the wave-transparent window, is presented. Because the high/low frequency embedded resonance loading mode of the resistive layer and the transmission layer is completely consistent, the active control method is also completely consistent.
In an embodiment of the present application, fig. 6 shows the relationship between the diode switch states and the embedded resonant pole positions, respectively, loaded on the high/low frequency embedded resonator. Wherein ER1 is a high frequency embedded resonator (Embedded resonator), and ER2 is a low frequency embedded resonator. When a PIN tube on the high-frequency resonator is conducted, the reactance pole is located at f11, and when the PIN tube is cut off, the reactance pole is located at f12; when the PIN tube on the low-frequency resonator is on, the reactance pole is positioned at f21, and when the PIN tube is off, the reactance pole is positioned at f22. In the present application, as an example, f11 and f22 are set to 6 GHz, f21 is set to 3 GHz, and f12 is set to 8 GHz. The switching of three frequency points from reactance poles to small reactance is realized by switching the PIN tube state loaded in the high/low frequency embedded resonator, and the switching of the wave-transmitting windows of the three frequency points can be realized. The method provided by the application is not limited to the construction of three wave-transparent windows, and can realize more wave-transparent windows by adjusting the quantity of embedded resonators.
To explain the working principle of the structure, the frequency response curves of the resistive layer and the transmission layer, respectively, are analyzed. The frequency response curve of the resistive layer is shown in fig. 7, where fig. 7 (a) is the transmission coefficient and reflection coefficient result (the solid line is the transmission coefficient and the dotted line is the reflection coefficient) of the resistive layer in the dual-band mode, and fig. 7 (b) is the transmission coefficient and reflection coefficient result (the solid line is the transmission coefficient and the dotted line is the reflection coefficient) of the resistive layer in the single-band mode; FIG. 7 (c) is the absorption rate result of the resistive layer in the dual band mode; fig. 7 (d) is the absorption rate result of the resistive layer in the single mode. The passband operation mode can be switched between double bands and single bands, and meanwhile, the passband operation mode can be obtained through an absorption rate curve, and a good wave absorbing effect is shown outside the passband. The frequency response curve of the transmission layer is shown in fig. 8, where fig. 8 (a) shows the transmission coefficient and reflection coefficient results of the transmission layer in the dual-band mode (the solid line shows the transmission coefficient and the dotted line shows the reflection coefficient), and fig. 8 (b) shows the transmission coefficient and reflection coefficient results of the transmission layer in the single-band mode (the solid line shows the transmission coefficient and the dotted line shows the reflection coefficient), and the passband shows a switching state consistent with the resistive layer, and meanwhile, the out-band shows a higher reflectivity, so that the out-band can be used as a reflection floor of the resistive layer, and the absorption effect of the out-band is improved.
The broadband frequency selective wave absorbing device with a plurality of switchable wave transmitting windows is obtained by combining the resistive layer and the transmission layer through an air layer. The simulation results are shown in fig. 9, where fig. 9 (a) is the transmission coefficient and reflection coefficient results of the overall structure in the single band mode, and fig. 9 (b) is the transmission coefficient and reflection coefficient results of the overall structure in the double band mode. Through regulating and controlling the PIN tube state loaded on the structure, the structure can be switched between double-band transmission and single-band transmission, and meanwhile, out-of-band reflection shows a suppression effect.
The design of the direct current control link of the controllable embedded resonator provided by the application is as follows: the line is flattened through the x-direction of the backside of the dielectric plate. In order to maintain the full wave-transmitting characteristics of the structure for orthogonal polarization, the influence of the direct current control link on the radio frequency signal is restrained by loading a choke coil. The control link is made to transmit only the direct control current without acting on the radio frequency signal. The application removes the lumped resistance devices generating loss in the resistive layer and the lumped coupling capacitance generating the wave-absorbing series resonance through the transmission layer. The resistive layer and the transmission layer have consistent unit configurations, and the method brings more design flexibility to the interlayer matching of multiple pass bands; the application provides a design method of a multistage embedded resonator, which loads a PIN tube into the embedded resonator to form an impedance-controllable embedded resonator. The high/low frequency controllable embedded resonator is constructed in the resistive layer and the transmission layer, the reactance pole position of the embedded resonance is flexibly designed, the flexible design of a plurality of controllable pass bands is realized, and meanwhile, good wave absorbing performance is realized outside the pass bands.
The above description is only of the preferred embodiments of the present application and is not intended to limit the present application, but various modifications and variations can be made to the present application by those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application should be included in the protection scope of the present application.
Claims (7)
1. A frequency selective wave absorbing device having a plurality of switchable wave transparent windows, characterized by: the active multi-passband transmission layer is fixed between the active multi-passband resistive layer and the active multi-passband transmission layer through nonmetal columns, so that an air layer is formed between the active multi-passband resistive layer and the active multi-passband transmission layer;
the active multi-passband resistive layer comprises a first dielectric plate (3) and a plurality of bandstop frequency selective surface units (2) arranged above the first dielectric plate (3);
the band-stop frequency selective surface unit (2) comprises 4 block metal layers which are sequentially arranged and aligned left and right, wherein the upper edge of a first block metal layer is aligned with the rear side edge of the first dielectric plate (3), and the lower edge of a fourth block metal layer is aligned with the front side edge of the first dielectric plate (3);
the first block metal layer is connected with the second block metal layer through a first chip resistor (9), the second block metal layer is connected with the third block metal layer through a first chip capacitor (10), and the third block metal layer is connected with the fourth block metal layer through a second chip resistor (11);
the first block metal layer is also provided with a first opening with an opening to the right, a first metal patch (8) is arranged in the first opening, the upper end of the first metal patch (8) is connected with the first block metal layer through a first PIN diode (12), and the lower end of the first metal patch is connected with the first block metal layer through a second patch capacitor (13); the right side of the first metal patch (8) is also provided with a second metal patch (14), and the second metal patch (14) is connected with the first metal patch (8) through a choke inductance;
a second opening penetrating through the left side and the right side of the metal layer is formed in the fourth block metal layer, the second opening divides the fourth block metal layer into an upper layer and a lower layer, and a first bending strap line (21) for connecting the upper layer and the lower layer of the fourth block metal layer is arranged on the left side of the second opening; a third metal patch (16) is arranged in the second opening, the upper end of the third metal patch (16) is connected with a fourth block-shaped metal layer through a second PIN diode (17), and the lower end of the third metal patch (16) is connected with the fourth block-shaped metal layer through a third patch capacitor (18); a fourth metal patch (19) is further arranged on the right side of the third metal patch (16), and the fourth metal patch (19) is connected with the third metal patch (16) through a choke inductance;
the first dielectric plate (3) is also symmetrically provided with a first metal strap and a second metal strap which are connected to two sides of the first block-shaped metal layer, and the first metal strap (6) and the second metal strap (7) are embedded with two choke inductors; the position of the choke inductance embedded by the first metal strap wire (6) is symmetrical to the position of the choke inductance embedded by the second metal strap wire (7); the upper edges of the first metal strip line (6) and the second metal strip line (7) are positioned on the same straight line with the upper edge of the first bulk metal layer;
the active multi-passband transmission layer comprises a second dielectric plate (5) and a plurality of bandpass frequency selective surface units (4) arranged above the second dielectric plate (5).
2. A frequency selective wave absorbing device having a plurality of switchable wave transparent windows as defined in claim 1, wherein: the number of band-pass frequency selective surface units (4) is the same as the number of band-stop frequency selective surface units (2), and each band-stop frequency selective surface unit (2) corresponds to one band-pass frequency selective surface unit (4).
3. A frequency selective wave absorbing device having a plurality of switchable wave transparent windows as defined in claim 1, wherein: the active multi-passband resistive layer further comprises a plurality of resistive layer stripline units arranged below the first dielectric plate (3), each resistive layer stripline unit corresponding to one bandstop frequency selective surface unit (2);
each resistive layer strip line unit comprises a third strip line (23) and a fourth strip line (24) which are perpendicular to the arrangement direction of the bulk metal layers, and the third strip line (23) and the fourth strip line (24) are respectively embedded with three choke coils;
the third metal strap (23) is positioned under the second metal patch (14), and the first dielectric plate (3) is provided with a first metal via hole (15) penetrating through the second metal patch (14), the first dielectric plate (3) and the third metal strap (23);
the fourth metal strap (24) is located under the fourth metal patch (19), and the first dielectric plate (3) is provided with a second metal via hole (20) penetrating through the fourth metal patch (19), the first dielectric plate (3) and the fourth metal strap (24).
4. A frequency selective wave absorbing device having a plurality of switchable wave transparent windows as defined in claim 1, wherein: the band-pass frequency selection surface unit (4) comprises two rectangular metal strip lines (25) which are identical in structure and parallel to each other, wherein the upper edges of the rectangular metal strip lines (25) are aligned with the rear side edges of the first dielectric plates (3), and the lower edges of the rectangular metal strip lines (25) are aligned with the front side edges of the first dielectric plates (3);
a fifth metal strip line (26) is arranged between the two rectangular metal strip lines (25), one end of the fifth metal strip line (26) is connected with the first rectangular metal strip line through a choke inductor, and the other end of the fifth metal strip line (26) is connected with the second rectangular metal strip line through the choke inductor; wherein the left side of the first rectangular metal strip line is connected with a sixth metal strip line (27) through a choke inductor; the right side of the second rectangular metal strip line is connected with a seventh metal strip line (28) through a choke inductor; the upper edges of the fifth metal strip line (26), the sixth metal strip line (27) and the seventh metal strip line (28) are positioned on the same straight line with the upper edge of the rectangular metal strip line (25).
5. A frequency selective wave absorbing device having a plurality of switchable wave transparent windows as defined in claim 4, wherein: a third opening and a fourth opening are arranged on the rectangular metal strip line (25), and the fourth opening is positioned below the third opening;
the opening direction of the third opening is rightward, a fifth metal patch (29) is arranged in the third opening, the upper end of the fifth metal patch (29) is connected with the rectangular metal strip line (25) through a third PIN diode (30), and the lower end of the fifth metal patch (29) is connected with the rectangular metal strip line (25) through a fourth patch capacitor (31); a sixth metal patch (32) is further arranged on the right side of the fifth metal patch (29), and the fifth metal patch (29) and the sixth metal patch (32) are connected through a choke inductance;
the fourth opening is an opening on the left side and the right side of the penetrating rectangular metal strip line (25), the opening divides the rectangular metal strip line (25) into an upper layer and a lower layer, and a second bending strip line (36) for connecting the upper layer and the lower layer of the rectangular metal strip line (25) is arranged on the left side of the fourth opening; the seventh metal patch (33) is arranged in the fourth opening, the upper end of the seventh metal patch (33) is connected with the rectangular metal strip line (25) through the fourth PIN diode (34), the lower end of the seventh metal patch (33) is connected with the rectangular metal strip line (25) through the fifth patch capacitor (35), the eighth metal patch (37) is further arranged on the right side of the seventh metal patch (33), and the eighth metal patch (37) is connected with the seventh metal patch (33) through a choke inductance.
6. A frequency selective wave absorbing device having a plurality of switchable wave transparent windows as defined in claim 5, wherein: the active multi-passband transmission layer further comprises a plurality of transmission layer stripline elements arranged below the second dielectric plate (5), each transmission layer stripline element corresponding to one bandpass frequency selective surface element (4).
7. A frequency selective wave absorbing device having a plurality of switchable wave transparent windows as defined in claim 5, wherein: the transmission layer stripline units comprise two stripline units, each corresponding to one rectangular metal stripline (25) in the band-pass frequency selective surface unit (4);
the first strip line unit comprises an eighth strip line (38) and a ninth strip line (39), and the eighth strip line (38) and the ninth strip line (39) are embedded with two choke inductors;
the eighth metal strip line (38) is positioned right below the sixth metal patch (32) in the corresponding rectangular metal strip line (25); the second dielectric plate (5) is provided with a third metal via hole (40) penetrating through the sixth metal patch (32), the second dielectric plate (5) and the eighth metal strap line (38);
the ninth metal strip line (39) is located right below the eighth metal patch (37) in the corresponding rectangular metal strip line (25), and the second dielectric plate (5) is provided with a fourth metal via hole (41) penetrating through the eighth metal patch (37), the second dielectric plate (5) and the ninth metal strip line (39);
in the transmission layer stripline unit, eighth striplines (38) of the two stripline units are connected, and ninth striplines (39) of the two stripline units are connected.
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