CN111180895A - Tunable absorption and permeation integrated material with high selectivity - Google Patents
Tunable absorption and permeation integrated material with high selectivity Download PDFInfo
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- CN111180895A CN111180895A CN202010045234.3A CN202010045234A CN111180895A CN 111180895 A CN111180895 A CN 111180895A CN 202010045234 A CN202010045234 A CN 202010045234A CN 111180895 A CN111180895 A CN 111180895A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
- H01Q15/0006—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
- H01Q15/0013—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective
- H01Q15/002—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective said selective devices being reconfigurable or tunable, e.g. using switches or diodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/42—Housings not intimately mechanically associated with radiating elements, e.g. radome
- H01Q1/422—Housings not intimately mechanically associated with radiating elements, e.g. radome comprising two or more layers of dielectric material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
- H01Q15/0006—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
- H01Q15/0013—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective
- H01Q15/0026—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective said selective devices having a stacked geometry or having multiple layers
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Abstract
The invention provides a tunable absorption-permeation integrated material with high selectivity, and belongs to the technical field of artificial electromagnetic materials. The parallel LC structure is introduced into the equivalent circuit of the impedance layer in the periodic structure, and the high gating characteristic of a specific frequency point is realized by adjusting the zero point of the equivalent filter; the resonant frequency is adjusted by changing the capacitance of the variable capacitance diode, so that the tunable characteristic of the wave-transparent frequency is realized, and because only a single variable capacitance diode is adopted in the unit structure, the introduced parasitic resistance is small, so that the small insertion loss can be realized; meanwhile, the frequency selection surface layer adopts a mechanical tuning structure, so that the purpose of tunable wave-transmitting frequency is realized, and simultaneously, the introduction of extra parasitic resistance is avoided, so that the insertion loss is reduced.
Description
Technical Field
The invention belongs to the technical field of artificial electromagnetic materials, and particularly relates to a tunable absorption-permeation integrated material with high selectivity.
Background
In modern strategic development, stealth and reverse stealth have become increasingly important development directions. For the purpose of electromagnetic stealth, common approaches include: 1. coating special materials capable of absorbing electromagnetic waves on the surfaces of equipment such as airplanes or ships; 2. the radar scattering cross section of the equipment is reduced based on the special appearance design of an electromagnetic scattering theory. However, neither of these methods is suitable for antenna cloaking. The antenna is one of the important scattering sources, and both methods affect the working performance of the antenna.
The current feasible solution is to adopt the frequency selective surface as the antenna housing to realize the gating of the electromagnetic wave of the antenna working frequency. The frequency selective surface generally adopts a periodic structure, is a novel artificial electromagnetic material and is essentially a spatial filter. By additionally arranging the frequency selection surface, wave transmission can be realized in the working frequency band of the antenna without influencing the normal work of the antenna; and realizing total reflection in other frequency bands and reflecting incident electromagnetic waves. Furthermore, based on the electromagnetic scattering theory, the appearance of the frequency selection surface is designed, electromagnetic waves irradiated onto the antenna can be reflected to other directions, and the scattering cross section of the forward radar is reduced. However, with the development of multi-station radar and radar networking technologies, it is not enough to reduce the scattering cross section of the forward radar, and electromagnetic waves reflected to other directions may still be detected by other radars.
The absorption and transmission integrated material is a periodic structure material which is vigorously researched in recent years, and can realize wave transmission in the working frequency band of the antenna and wave absorption in other frequency bands by additionally arranging the impedance layer on the basis of the frequency selection surface. Therefore, the normal work of the antenna can not be influenced, incident electromagnetic waves of other frequency bands can be absorbed, the detection of a multi-station radar is avoided, and the electromagnetic stealth is realized. At present, most of wave-absorbing frequency bands of the publicly reported absorption-permeation integrated materials are fixed frequency bands, the tunable wave-absorbing frequency bands cannot be realized, the flexibility is lacked in practical application, and the application of the absorption-permeation integrated materials in the field requiring the transmission frequency to be variable is particularly limited, so that the research of the tunable absorption-permeation integrated materials is very significant. Lijie Wu et al have designed a tunable imbibition integral material (Lijie Wu, Shuomin Zhong, Jifu Huang, et al, broadband Frequency-Selective radar With vector-transducer electromagnetic wave Window [ J ]. IEEE Transactions on Antenna and pro-amplification, 67(9), sept.2019.), its impedance layer adopts two-square ring structure, load Varactor in order to tune the Frequency between the square ring, and load the resistance With four microstrips; the frequency selective surface layer adopts a conventional band-pass frequency selective surface; however, the impedance layer and the frequency selection surface layer of the absorption and transmission integrated material adopt simple structures for conveniently designing a bias circuit of the variable capacitance diode, so that the frequency selectivity of the variable capacitance diode is poor; in addition, because the upper layer and the lower layer both use the varactor devices, a larger parasitic resistance is introduced, and therefore the insertion loss is larger. Therefore, it is very significant to design a new absorption and transmission integrated material, which can realize the frequency tuning of electromagnetic waves and has high selectivity and low insertion loss.
Disclosure of Invention
In view of the problems of the background art, the present invention aims to provide a tunable absorption-transmission integrated material with high selectivity. The parallel LC structure is introduced into the equivalent circuit of the impedance layer in the periodic structure, and the high gating characteristic of a specific frequency point is realized by adjusting the zero point of the equivalent filter; the resonant frequency is adjusted by changing the capacitance of the variable capacitance diode, so that the tunable characteristic of the wave-transparent frequency is realized, and because only a single variable capacitance diode is adopted in the unit structure, the introduced parasitic resistance is small, so that the small insertion loss can be realized; meanwhile, the frequency selection surface layer adopts a mechanical tuning structure, so that the purpose of tunable wave-transmitting frequency is realized, and simultaneously, the introduction of extra parasitic resistance is avoided, so that the insertion loss is reduced.
In order to achieve the purpose, the technical scheme of the invention is as follows:
a tunable absorption and transmission integrated material with high selectivity comprises n x n structural units, wherein each structural unit comprises an impedance layer and a frequency selection surface layer, each impedance layer comprises a dielectric layer and a metal layer positioned on the upper surface of the dielectric layer, and each frequency selection surface layer is of an adjustable structure; the interdigital capacitor branch circuit consists of an interdigital structure and two first vertical rectangular metal patches positioned on two sides of the interdigital structure, the variable capacitance diode branch circuit consists of a diode pad and two second vertical rectangular metal patches positioned on two sides of the diode pad, and the diode pad is used for welding a variable capacitance diode; the interdigital structure consists of 6 metal strips with the same width, and is sequentially connected with two first vertical rectangular metal patches from left to right; two ends of each of the first and second vertical rectangular metal patches are respectively connected with a transition rectangular metal, the transition rectangular metal is positioned at the center of the short side of the other rectangular metal, one end of the rectangular metal, which is close to the parallel structure, is slotted for welding a resistor, and the other end of the rectangular metal is positioned at the center of a long metal strip; the frequency selection surface layer comprises a metal frame, a square metal block and an angle adjusting rod, the square metal block is located in the metal frame, a through hole is formed in the center of the opposite side face of the metal frame, one end of the angle adjusting rod is fixedly connected with the square metal block, the other end of the angle adjusting rod is arranged in the through hole, the direction of the angle adjusting rod is perpendicular to the direction of the parallel structure of the impedance layer, and the polarization directions are consistent.
Further, the distance between the impedance layer and the frequency selection layer is D, which can be adjusted according to different working frequencies, generally 1/4 of the working wavelength.
Further, D was 16 mm.
Further, n is more than or equal to 8.
Further, the size of the resistance layer is 30mm × 30 mm; the length of the metal strips in the interdigital structure is 1.1mm, the width of the metal strips is 0.2mm, and the distance between the connected metal strips is 0.2 mm; the length of the first vertical rectangular metal patch is 2mm, and the width of the first vertical rectangular metal patch is 0.7 mm; the length of the second vertical rectangular metal patch is 2.45mm, and the width of the second vertical rectangular metal patch is 0.3 mm; the diode bonding pads are square, the size of the diode bonding pads corresponds to the packaging size of the adopted variable capacitance diode, the side length is 0.5mm, and the spacing between the bonding pads is 0.4 mm; the distance between the two branch paths is 2 mm; the length of the transition rectangular metal is 3mm, and the width of the transition rectangular metal is 0.3 mm; the length of the rectangular metal is 9.6mm, the width of the rectangular metal is 4mm, the gap distance on the rectangular metal is 1.6mm from the parallel structure, and the gap width is 0.5 mm; the length of the long metal strip is 30mm, the width is 0.3mm, and the specific size can be changed according to the working frequency.
Furthermore, the side length range of the metal frame in the frequency selection surface layer is 20-40 mm, the thickness W is 1-5 mm, the height H is 8-20 mm, the side length range of the square metal block is 10-30 mm, the thickness range is 1-8 mm, and the diameter of the adjusting rod is the same as the thickness of the square metal block.
Furthermore, the side length of a metal frame in the frequency selection surface layer is 30mm, the thickness W is 2mm, the height H is 10mm, and the radius of the bottom surface of the adjusting rod is 2 mm; the side length of the square metal block is 20mm, and the thickness of the square metal block is 4 mm.
Furthermore, the resonance frequency of the variable capacitance diode branch can be adjusted by adjusting the capacitance of the variable capacitance diode on the variable capacitance diode branch, so that tunable wave absorbing/wave transmitting characteristics can be realized within a certain range; when the capacitance of the variable capacitance diode is increased, the wave-transmitting frequency of the variable capacitance diode is reduced, and when the capacitance of the variable capacitance diode is reduced, the wave-transmitting frequency of the variable capacitance diode is increased.
Furthermore, the angle of the square metal block relative to the bottom surface of the metal frame is changed through the rotation angle adjusting rod, the adjusting angle is 0-90 degrees, wave transmission of different frequencies is achieved, the wave transmission frequency of the wave transmission is consistent with that of the impedance layer, and the specific adjusting rule is as follows: when the angle is reduced, the wave-transparent frequency is reduced, and when the angle is increased, the wave-transparent frequency is increased.
Further, the varactor model adopted by the invention is SMV 1405.
Furthermore, the dielectric substrate adopted by the invention is Rogers 4350B, and the metal layer is a PCB printed circuit.
In summary, due to the adoption of the technical scheme, the invention has the beneficial effects that:
1. according to the invention, the interdigital structure and the parallel connection of the variable capacitance diode are designed on the impedance layer, so that the high gating performance of the impedance layer in the absorption and transmission integrated material is realized; and the frequency is tuned by adjusting the capacitance value of the variable capacitance diode, so that the wave-transmitting frequency of the impedance layer in a certain frequency band can be tuned, the tuning means is simple and easy to operate, and the structure can be realized by a printing plate process, so that the cost is low and the processing is simple.
2. The tunable characteristic of wave-transparent frequency is realized by adopting a mechanical adjustable structure on the frequency selective surface layer; at the same time, lower insertion loss is achieved because varactor diodes are avoided in this layer.
3. The tuning relative bandwidth of the absorption-permeation integrated material designed by the invention can reach 11.3%, meanwhile, the maximum insertion loss is as low as 0.29dB, the gating bandwidth is about 35%, and the whole body is in a better industrial level.
Drawings
FIG. 1 is a schematic view of a structural unit of the wicking monolithic material of the present invention.
Fig. 2 is a specific structural diagram of a metal layer in the resistive layer according to the present invention.
Fig. 3 is a detailed structural view of the frequency selective surface layer of the present invention.
FIG. 4 is a diagram of the electromagnetic simulation results of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention will be described in further detail with reference to the following embodiments and accompanying drawings.
A tunable absorption and transmission integrated material with high selectivity comprises n x n structural units, wherein the structural units are shown in figure 1 and comprise a resistance layer 1 and a frequency selection surface layer 5, the distance D between the resistance layer and the frequency selection layer is 16mm, and an intermediate medium is air; the impedance layer comprises a dielectric layer and a metal layer 2 positioned on the upper surface of the dielectric layer, and the variable capacitance diode 3 and the resistor 4 are welded on the metal layer; the thickness of the dielectric layer is 0.254mm, the size is 30mm multiplied by 30mm, and the material is Rogers 4350B; the frequency selection layer is of a mechanical adjustable structure, and the outer dimension of the frequency selection layer is 30mm multiplied by 30 mm.
The structure of the metal layer in the impedance layer is shown in fig. 2, the center of the metal layer is a parallel structure and consists of two branches, namely an interdigital capacitor branch and a variable capacitance diode branch, and the distance between the two branches is 2 mm; the interdigital capacitor branch consists of an interdigital structure 9 and two first vertical rectangular metal patches 8 positioned on two sides of the interdigital structure, the length of each first vertical rectangular metal patch is 2mm, the width of each first vertical rectangular metal patch is 0.7mm, the variable capacitance diode branch consists of a diode pad 11 and two second vertical rectangular metal patches 10 positioned on two sides of the diode pad, the length of each second vertical rectangular metal patch is 2.45mm, the width of each second vertical rectangular metal patch is 0.3mm, the diode pad is used for welding a variable capacitance diode 4, the diode pad is square, the side length of each diode pad is 0.5mm, and the pad interval is 0.4 mm; the interdigital structure consists of 6 metal strips with the same width, the length of each metal strip is 1.1mm, the width of each metal strip is 0.2mm, the space between every two adjacent metal strips is 0.2mm, and the metal strips are sequentially connected with a first vertical rectangular metal patch of the interdigital capacitor branch from left to right; two ends of the first vertical rectangular metal patch and the second vertical rectangular metal patch of the parallel structure are respectively connected with a transition rectangular metal, the length of the transition rectangular metal is 3mm, and the width of the transition rectangular metal is 0.3 mm; the transition rectangular metal is located at the center of the short side of the rectangular metal 6, the length of the rectangular metal is 9.6mm, the width of the rectangular metal is 4mm, the rectangular metal is slotted 7 at a position 1.6mm away from the parallel structure, the width of the slot is 0.5mm, the rectangular metal is used for welding a resistor 3, the resistance value is 150 omega, the other end of the rectangular metal is located at the center of a long metal strip 12, the length of the long metal strip is 30mm, the width of the long metal strip is 0.3mm, and the long metal strip is used as a bias line of a variable capacitance diode.
The structure of the frequency selective surface layer is shown in fig. 3, and comprises a metal frame 13, a square metal block 15 positioned in the metal frame, and an angle adjusting rod 14 for fixing the square metal block and the metal frame, wherein the angle adjusting rod is respectively arranged in the center of the opposite side faces of the metal frame; the outer dimension of the metal frame is 30mm multiplied by 30mm, the thickness W is 2mm, and the height H is 10 mm; circular through holes are formed in the center positions of the two opposite side surfaces of the metal frame 13, an angle adjusting rod 14 is inserted into the circular through holes, and the radius of the bottom surface of the angle adjusting rod 14 is 2 mm; the other end of the angle adjusting rod is fixedly connected with the square metal block, and the angle is adjusted by stirring the metal block; the side length of the square metal block is 20mm, and the thickness of the square metal block is 4 mm.
Two branches in the impedance layer can respectively correspond to two groups of series LC circuits in an equivalent circuit, wherein the interdigital structure branch is a fixed inductor connected with a fixed capacitor in series, and the variable capacitor branch is a fixed inductor connected with a variable capacitor in series. As can be seen from the transmission line circuit theory, a series LC circuit is equivalent to a band elimination filter; the equivalent circuit of the two branches is in parallel connection, so that the electromagnetic wave can be regarded as passing through two parallel band-stop filters in the transmission line. Resonant frequency of series LC circuit
Corresponds to the zero of the band stop filter. The capacitance value of the variable capacitor is adjusted, so that zero points of the two groups of band elimination filters can be adjusted to be close to each other, wave transmission can be achieved in a narrow frequency band, and the impedance layer has high selectivity. After the electromagnetic waves pass through the impedance layer, the included angle between the metal block of the lower frequency selection surface layer and the horizontal plane is adjusted to tune the wave transmission frequency, so that the wave transmission frequency is aligned with the wave transmission frequency of the upper impedance layer to realize wave transmission, and the electromagnetic waves of other frequencies are reflected to the upper impedance layer, and the energy of the electromagnetic waves is absorbed by the resistor on the impedance layer, thereby realizing wave absorption.
FIG. 4 is a diagram of the electromagnetic simulation result of the absorption-transmission integrated material of the present invention in the high frequency electromagnetic simulation software under the periodic boundary condition when a single polarized wave is vertically incident, wherein the resistance value used is 150 Ω. As shown, when the capacitance C of the varactor diode is reduced from 2.67pF to 0.63pF, the angle between the square metal block in the lower frequency-selective surface layer and the horizontal plane is increased from 10 ° to 28 °, and the maximum value of | S21| is increased from 4.00GHz to 4.48GHz, which indicates that the wave-transparent frequency is tuned from 4.00GH to 4.48GHz, the tuning relative bandwidth is 11.3%, and the maximum insertion loss is 0.29 dB. Meanwhile, | S11| is less than-10 dB in the range of 2-6 GHz, and | S21| is less than-10 dB, and the frequency range changes along with the change of wave-transparent frequency: when the wave-transmitting frequency is 4.00GHz, | S21| is less than-10 dB, the frequency ranges are 2-3.46 GHz and 4.98-6.00 GHz; when the wave-transmitting frequency is 4.48GHz, | S21| is less than-10 dB, the frequency range is changed into 2-3.60 GHz and 5.05-6.00 GHz. When the | S11| and the | S21| are simultaneously less than-10 dB, the absorption and permeation integrated material shows the wave absorbing property. Since the range of | S21| less than-10 dB changes with the wave-transparent frequency, the wave absorbing material is tunable. When the gating bandwidth is defined as | S21| to be-10 dB, the gating bandwidth of the suction-permeation integrated material provided by the invention is about 35% and is superior to the reported literature data.
While the invention has been described with reference to specific embodiments, any feature disclosed in this specification may be replaced by alternative features serving the same, equivalent or similar purpose, unless expressly stated otherwise; all of the disclosed features, or all of the method or process steps, may be combined in any combination, except mutually exclusive features and/or steps.
Claims (10)
1. A tunable absorption and transmission integrated material with high selectivity comprises n x n structural units, wherein each structural unit comprises an impedance layer and a frequency selection surface layer, each impedance layer comprises a dielectric layer and a metal layer positioned on the upper surface of the dielectric layer, and each frequency selection surface layer is of an adjustable structure; the interdigital capacitor branch circuit consists of an interdigital structure and two first vertical rectangular metal patches positioned on two sides of the interdigital structure, the variable capacitance diode branch circuit consists of a diode pad and two second vertical rectangular metal patches positioned on two sides of the diode pad, and the diode pad is used for welding a variable capacitance diode; the interdigital structure consists of 6 metal strips with the same width, and is sequentially connected with the first vertical rectangular metal patch from left to right; two ends of each of the first and second vertical rectangular metal patches are respectively connected with a transition rectangular metal, the transition rectangular metal is positioned at the center of the short side of the other rectangular metal, one end of the rectangular metal, which is close to the parallel structure, is slotted for welding a resistor, and the other end of the rectangular metal is positioned at the center of the long metal strip; the frequency selection surface layer comprises a metal frame, a square metal block and an angle adjusting rod, the square metal block is located in the metal frame, a through hole is formed in the center of the opposite side face of the metal frame, one end of the angle adjusting rod is fixedly connected with the square metal block, the other end of the angle adjusting rod is arranged in the through hole, the direction of the angle adjusting rod is perpendicular to the direction of the parallel structure of the impedance layer, and the polarization directions are consistent.
2. The tunable transparent and absorptive integrated material of claim 1, wherein the distance between the impedance layer and the frequency selective layer is D, which is 1/4 of the operating wavelength.
3. The tunable getter-bulk material with high permselectivity according to claim 2, wherein D is 16 mm.
4. The tunable absorption-transmission integral material with high selectivity as claimed in claim 1, wherein n is more than or equal to 8.
5. The tunable transparent absorbing integral material with high gating ability of claim 1, wherein the size of the impedance layer is 30mm x 30 mm; the length of the metal strips in the interdigital structure is 1.1mm, the width of the metal strips is 0.2mm, and the distance between the connected metal strips is 0.2 mm; the length of the first vertical rectangular metal patch is 2mm, and the width of the first vertical rectangular metal patch is 0.7 mm; the length of the second vertical rectangular metal patch is 2.45mm, and the width of the second vertical rectangular metal patch is 0.3 mm; the diode bonding pads are square, the side length is 0.5mm, and the spacing between the bonding pads is 0.4 mm; the distance between the interdigital capacitor branch and the variable capacitance diode branch is 2 mm; the length of the transition rectangular metal is 3mm, and the width of the transition rectangular metal is 0.3 mm; the length of the rectangular metal is 9.6mm, and the width of the rectangular metal is 4 mm; slotting the rectangular metal at a position 1.6mm away from the parallel structure, wherein the width of the slot is 0.5 mm; the long metal strip has a length of 30mm and a width of 0.3 mm.
6. The tunable absorption-transmission integrated material with high gating performance as claimed in claim 1, wherein the metal frame in the frequency selective surface layer has a side length of 20-40 mm, a thickness of 1-5 mm, a height of 8-20 mm, a side length of 10-30 mm and a thickness of 1-8 mm, and the diameter of the adjusting rod is the same as the thickness of the square metal block.
7. The tunable absorption-transmission integrated material with high selectivity as claimed in claim 6, wherein the side length of the metal frame in the frequency selective surface layer is 30mm, the thickness is 2mm, the height is 10mm, and the radius of the bottom surface of the adjusting rod is 2 mm; the side length of the square metal block is 20mm, and the thickness of the square metal block is 4 mm.
8. The tunable absorption-transmission integrated material with high selectivity according to claim 1, wherein the resonant frequency of the absorption-transmission integrated material is adjusted by adjusting the capacitance of the varactor diode on the varactor diode branch, and the specific adjustment rule is as follows: when the capacitance of the variable capacitance diode is increased, the wave-transmitting frequency of the variable capacitance diode is reduced; when the capacitance of the variable capacitance diode is reduced, the wave-transparent frequency of the variable capacitance diode is increased.
9. The tunable absorption and transmission integrated material with high selectivity as claimed in claim 1, wherein the angle of the square metal block relative to the bottom surface of the metal frame is changed by adjusting the angle of rotation to 0-90 ° so as to realize the wave transmission of different frequencies, which is consistent with the wave transmission frequency of the impedance layer, and the specific adjustment rule is as follows: when the angle is reduced, the wave-transparent frequency is reduced, and when the angle is increased, the wave-transparent frequency is increased.
10. The tunable absorption-transmission integrated material with high selectivity according to claim 1, wherein the varactor is of the type SMV1405, the dielectric substrate is of the type Rogers 4350B, and the metal layer is a PCB printed circuit.
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| CN111817010A (en) * | 2020-06-02 | 2020-10-23 | 杭州电子科技大学 | Reflecting band switchable three-dimensional broadband absorption type frequency selection structure |
| CN111817010B (en) * | 2020-06-02 | 2022-02-11 | 杭州电子科技大学 | Reflecting band switchable three-dimensional broadband absorption type frequency selection structure |
| CN112103660A (en) * | 2020-09-17 | 2020-12-18 | 中国人民解放军国防科技大学 | C-band broadband energy selection surface |
| CN112103660B (en) * | 2020-09-17 | 2022-01-21 | 中国人民解放军国防科技大学 | C-band broadband energy selection surface |
| CN112928491A (en) * | 2021-01-13 | 2021-06-08 | 电子科技大学 | Ultra-wideband wave-absorbing dual-polarized switchable anti-absorption integrated material |
| CN112928491B (en) * | 2021-01-13 | 2022-03-15 | 电子科技大学 | Ultra-wideband wave-absorbing dual-polarized switchable anti-absorption integrated material |
| CN114374097A (en) * | 2022-01-26 | 2022-04-19 | 西安电子科技大学 | Broadband, multifrequency and frequency conversion antenna coating |
| CN114374097B (en) * | 2022-01-26 | 2023-04-28 | 西安电子科技大学 | Broadband, multi-frequency and variable-frequency antenna coating |
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| CN111180895B (en) | 2021-03-30 |
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Inventor after: Tian Jing Inventor after: Gao Yin Inventor after: Li Ruiming Inventor after: Jiang Bixiao Inventor after: Hu Haoquan Inventor after: Chen Bo Inventor after: Bao Yongfang Inventor after: Lei Shiwen Inventor after: Zeng Xianlu Inventor before: Tian Jing Inventor before: Gao Yin Inventor before: Li Ruiming Inventor before: Jiang Bixiao Inventor before: Hu Haoquan Inventor before: Chen Bo Inventor before: Bao Yongfang Inventor before: Lei Shiwen |