CN111817010A - Reflecting band switchable three-dimensional broadband absorption type frequency selection structure - Google Patents
Reflecting band switchable three-dimensional broadband absorption type frequency selection structure Download PDFInfo
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- CN111817010A CN111817010A CN202010488314.6A CN202010488314A CN111817010A CN 111817010 A CN111817010 A CN 111817010A CN 202010488314 A CN202010488314 A CN 202010488314A CN 111817010 A CN111817010 A CN 111817010A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
- H01Q15/0006—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
- H01Q15/0013—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
- H01Q15/0006—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
- H01Q15/0013—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective
- H01Q15/0026—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective said selective devices having a stacked geometry or having multiple layers
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Abstract
The invention relates to a reflection band switchable three-dimensional broadband absorption type frequency selection structure. The conventional frequency selection structure is basically a passive structure, has a single function and is difficult to react to different environments. And few reported reflection-type frequency selection structures loaded with electric control elements are narrow in working frequency band and limited in working occasions. The invention adopts a mode of combining double resonators, and controls the working state of one resonator through the diode to realize the opening and closing of the reflection band of the frequency selection structure, thereby realizing the change of the working mode, greatly improving the flexibility of the frequency selection structure and expanding the application prospect.
Description
Technical Field
The invention belongs to the technical field of microwaves, and relates to a reflecting band switchable three-dimensional broadband absorption type frequency selection structure which can be used as a reflecting surface of a reflecting surface antenna of a microwave frequency band, wherein potential application scenes of the reflecting surface antenna comprise an air detection radar of a warship and the like.
Background
In current military application, the adoption of a frequency selective surface/structure as an antenna housing is one of effective modes for reducing a radar scattering cross section, and the method can effectively improve the stealth performance of a combat platform.
The frequency selective surface is essentially a spatial filter that screens electromagnetic waves of a particular frequency band, polarization, and angle of incidence, transmitting desired electromagnetic waves, and reflecting undesired electromagnetic waves. Therefore, the antenna housing developed by adopting the frequency selective surface can reflect the detection wave to enable the detection wave to deviate from an incident path, and therefore the purpose of reducing the radar scattering cross section (RCS) of the antenna is achieved. However, the radome based on the conventional frequency selective surface cannot reduce the dual/multi station RCS, and thus an absorption type frequency selective structure is proposed. By adding resistance or materials and elements on the traditional frequency selection structure, the absorption of out-of-band electromagnetic waves can be realized, so that out-of-band RCS is effectively reduced. Meanwhile, normal transmission of in-band electromagnetic waves is guaranteed, and the work of the antenna is not affected.
Most of the absorption frequency selective structures reported to date are passive, and once they are confirmed, their performance is determined and cannot be changed. This greatly reduces the flexibility of the radome. In order to improve the flexibility of the antenna housing, the active device is loaded into the frequency selection structure, and the working frequency, the working state and other performances of the antenna housing are changed by changing the external control voltage, so that the application range of the antenna housing is effectively expanded. Few reported active frequency selective structures also fail to achieve performance controllability over a wide frequency band.
Disclosure of Invention
The invention aims to provide a reflecting band switchable three-dimensional broadband absorption type frequency selection structure aiming at the defects of the prior art, and realizes an extremely wide wave absorption band by constructing lossy resonators with different frequency bands. And two radio frequency diodes are loaded on the high-frequency lossy resonator, and the switching between the reflective frequency selection structure and the broadband wave absorber can be realized by controlling the on-off of the diodes through the externally loaded voltage. The structure has clear principle, simple structure, easy design and low cost, and has better performance compared with the prior active switchable frequency selection structure.
The reflection band switchable three-dimensional broadband absorption type frequency selection structure is a periodic array structure, and each structural unit is seamlessly arranged along the x axis and the y axis; each unit consists of a first lossy resonator, a second lossy resonator, a first T-shaped direct current supply lead and a first metal reflecting surface, wherein the first lossy resonator and the second lossy resonator work in different frequency bands.
The first lossy resonator is a low-frequency resonator and consists of a first dielectric plate, first parallel metal double wires printed on the upper surface and the lower surface of the first dielectric plate and a first metal zigzag line loaded with a first resistor. The first metal zigzag line is positioned at one end of the first dielectric plate, one end of the first metal zigzag line is connected with one end of the first parallel metal double wires positioned on the lower surface of the first dielectric plate, and the other end of the first metal zigzag line is connected with one end of the first parallel metal double wires positioned on the upper surface of the first dielectric plate of the adjacent structural unit.
The first metal zigzag line increases equivalent inductance and improves the performance of high-frequency wave-absorbing frequency band, wherein the width w of the first metal zigzag linemMust satisfy the condition w1≤wm≤6*w1。
The second lossy resonator is a high-frequency resonator and consists of a first metal through hole, a first metal straight line, a first radio-frequency diode, a second radio-frequency diode and a second resistor. The first metal through hole penetrates through the center of the first dielectric plate; a first radio frequency diode, a second resistor and a second radio frequency diode are sequentially loaded on the first metal straight line; one end of the first metal straight line is connected with the first metal through hole, and the other end of the first metal straight line is connected with the first metal through hole of the adjacent structural unit;
the radio frequency diode is electrically controllable, and a T-shaped direct current power supply line is utilized to carry out voltage control on the radio frequency diode through the first metal through hole;
the first T-shaped direct current power supply lead is connected with the second lossy resonator and extends along the direction of the x axis;
preferably, the first T-shaped direct current power supply lead is composed of a z-axis metal wire and an x-axis metal wire; and the two ends of the x axial metal wire are connected with the x axial metal wire of the first T-shaped direct current power supply lead of the x axial adjacent unit. Only one T-shaped direct current supply lead is ensured in each unit, and a parasitic resonance mode caused by the introduction of the direct current supply lead is eliminated.
The first metal reflecting surface is perpendicular to the first dielectric slab and is positioned far away from the first metal bent line end; one end of the first metal reflecting surface is connected with the first dielectric slab, and the other end of the first metal reflecting surface is connected with the first dielectric slab of the adjacent structural unit;
the shortest distance d between the second lossy resonator and the first metal reflecting surface1Satisfies the condition 4b/9 ≤ d15b/9 (namely the shortest distance of the first metal straight line to the first metal reflecting surface), wherein b represents the width of the first metal reflecting surface in the x-axis direction;
the shortest x axial width distance d between the first T-shaped direct current power supply lead and the first parallel metal double wire2D is not less than 0.2b2Less than or equal to 0.8 b; distance d between the first T-shaped DC power supply lead and the first metal reflecting surface1-l1Satisfies the condition that (d) is not less than 0.4 x (L-L)1-l1) Less than or equal to 0.6 x (L-L), thereby avoiding the resonance influence performance caused by coupling generated by excessive approach of metal structures; wherein l1The length of the metal wire in the z-axis direction of the first T-shaped direct current power supply lead is shown, L is the length of the first dielectric plate in the z-axis direction, and L is the length of the first parallel metal double wire in the z-axis direction.
The first lossy resonator and the second lossy resonator have complementary working frequencies.
The invention can also change the width b in the x-axis direction and the height h in the y-axis direction, the length L of the unit structure in the z-axis direction, the thickness t of the first dielectric plate and the dielectric constantrLength l and width w of the first parallel metal double line1Resistance value R of the first resistor1A gap s of the first metal meander line; diameter D of first metal via hole, width w of first metal straight line2Resistance value R of the second resistor2And the like, comprehensively regulating and controlling the absorption band frequency, the absorption band bandwidth, the reflection band bandwidth and other properties.
The specific working principle is as follows: when electromagnetic waves are emitted into the surface of the structure, the first lossy resonator and the first metal reflecting surface work together to form an absorption band at the frequency of a basic mode and a frequency of a third-order mode respectively, and form a wide reflection band at the frequency of a second-order mode; when the second lossy resonator works in combination with the first metal reflecting surface, a wave absorbing band is formed, the working frequency of the wave absorbing band is the same as the second-order mode frequency of the first lossy resonator, and therefore the wave absorbing bands of the two lossy resonators are complementary. The second lossy resonator is controlled by using external voltage, when the diode is conducted, the second lossy resonator works, and the first lossy resonator absorbs the electromagnetic waves which cannot be absorbed at the second-order mode, so that an extremely wide complete wave-absorbing band is formed; when the diode is switched off, the second lossy resonator does not work, only the first lossy resonator works, the whole structure forms a wide absorption band at the frequency of the basic mode and the frequency of the third mode, and the whole structure presents a broadband reflection characteristic at the frequency of the second mode.
The reflecting band switchable three-dimensional broadband absorption type frequency selective structure has the following advantages:
(1) the reflection band switchable three-dimensional broadband absorption type frequency selection structure can conveniently control the on and off of the reflection band, can realize the free switching of the wave absorption surface and the reflection surface, and greatly improves the flexibility and the stealth characteristic of the system.
(2) The reflection band switchable three-dimensional broadband absorption type frequency selection structure adopts a three-dimensional structure, and can greatly reduce the unit size of x-y plane periodic arrangement under the condition that a design process can be realized, so that very stable frequency response characteristics are realized.
Drawings
FIG. 1 is a schematic diagram of a three-dimensional cell structure of the present invention;
FIG. 2 is a three-dimensional structure parameter annotation of the present invention;
FIG. 3 is a simulation of the frequency response characteristics of the present invention;
the labels in the figure are: the circuit comprises a first dielectric plate 1, a first metal zigzag line 3, a first resistor 4, a first metal via hole 5, a first T-shaped direct current supply lead 6, a first parallel metal double line 7, a second resistor 8, a first metal straight line 9, a second radio frequency diode 10, an adjacent unit first T-shaped direct current supply lead 11, an adjacent unit first parallel metal double line 12 and a first metal reflecting surface 13.
Detailed Description
The present invention is further analyzed with reference to the following specific examples.
The invention adopts the parallel connection of double resonators, and realizes the three-dimensional broadband absorption type frequency selection structure with switchable reflection bands by loading the electrically controllable radio frequency diode on the second resonator. When the reflection band is turned on (i.e. the diode is turned on), the structure presents reflection characteristics in the central frequency band, and two sides of the reflection band are respectively provided with a wide absorption band; when the reflection band is off (i.e., the diode is off), the structure behaves as a wave absorber with a wide absorption band.
As shown in fig. 1 and 2, the reflection band switchable three-dimensional broadband absorption frequency selective structure is a periodic structure, and each structural unit is composed of a first lossy resonator, a second lossy resonator, a first T-shaped direct current power supply lead 6 and a first metal reflecting surface 13, which work in different frequency bands.
The first resonator comprises a first dielectric plate 1, first parallel metal double wires 7 printed on the upper side and the lower side of the first dielectric plate and a first metal zigzag line 3 loaded with a first resistor 4.
The second resonator comprises a first metal via hole 5, a first metal straight line 9, a first radio frequency diode 10, a second radio frequency diode 10 and a second resistor 8.
The first T-shaped direct current supply lead 6 is connected with the second resonator;
the first metal reflecting surface 13 is perpendicular to the first dielectric slab and is positioned far away from the first metal bent line end; one end of the first metal reflecting surface is connected with the first dielectric slab, and the other end of the first metal reflecting surface is connected with the first dielectric slab of the adjacent structural unit;
fig. 1 and 2 show 12 metal lines belonging to the first metal parallel double line and located on the top layer of the first dielectric substrate in adjacent cells along the negative direction of the y-axis. 11 is a first T-shaped dc supply lead on the top layer of the first dielectric slab in the adjacent cell in the negative direction along the y-axis.
The specific structural geometric parameters are as follows:
wherein b and h are the width of the unit structure in the x-axis direction and the height in the y-axis direction, and L is the length of the unit structure in the z-axis direction. t is the thickness of the first dielectric substrate,ris the relative dielectric constant of the first dielectric substrate, l and w1Length and width, w, of parallel double lines of the first metal, respectivelymIs the width of the first metal meander line, s is the gap width of the first metal meander line, R1Is the resistance of the first resistor, D is the diameter of the first metal via hole, l1Is the length of the first T-shaped metal wire along the z-axis, w2Is the line width, R, of the first T-shaped metal line and the first metal straight line2Is the resistance value of the first resistor, d1Is the distance from the first metal via hole to the first metal reflecting surface, d2The distance from the first metal via to the first metal parallel to the centerline of the double line width.
| b(mm) | 16 | h(mm) | 12 |
| L(mm) | 40 | t(mm) | 1 |
| l(mm) | 27 | w1(mm) | 0.8 |
| s(mm) | 0.3 | wm(mm) | 1.7 |
| D(mm) | 2.5 | R1(mm) | 200 |
| w2(mm) | 0.6 | l1(mm) | 9.5 |
| R2(mm) | 500 | d1(mm) | 20 |
| d2(mm) | 16 | εr | 2.2 |
Fig. 3 is a simulation result of the reflection band switchable three-dimensional broadband absorption type frequency selective structure. The simulation result shows that when the diode works in different working states, the structure presents different frequency response characteristics. When the diode is turned off, the structure generates two absorption bands (| S) with the frequency bands of 0.99-2.7 GHz and 4.53-6.57 GHz respectively11≦ -10 dB |) and produces a wide reflection band around 3.5GHz with a 3dB bandwidth of 33.5% (3.03-4.25 GHz); when the diode is turned on, the structure generates an extremely wide wave-absorbing band, the frequency is 0.92-6.76 GHz, and the relative bandwidth is 152.1%.
The foregoing is only a preferred embodiment of the present invention, and it should be noted that those skilled in the art can make various improvements and modifications without departing from the principle of the present invention, and these improvements and modifications should also be construed as the protection scope of the present invention.
Claims (7)
1. The reflection band switchable three-dimensional broadband absorption type frequency selection structure is a periodic array structure and is characterized in that each structural unit is seamlessly arranged along x and y axes; each unit consists of a first lossy resonator, a second lossy resonator, a first T-shaped direct current power supply lead and a first metal reflecting surface, wherein the first lossy resonator and the second lossy resonator work in different frequency bands;
the first lossy resonator is a low-frequency resonator and consists of a first dielectric plate, first parallel metal double wires printed on the upper surface and the lower surface of the first dielectric plate and a first metal zigzag line loaded with a first resistor; the first metal zigzag line is positioned at one end of the first dielectric plate, one end of the first metal zigzag line is connected with one end of the first parallel metal double line positioned on the lower surface of the first dielectric plate, and the other end of the first metal zigzag line is connected with one end of the first parallel metal double line positioned on the upper surface of the first dielectric plate of the adjacent structural unit;
the second lossy resonator is a high-frequency resonator and consists of a first metal through hole, a first metal straight line loaded with two radio frequency diodes and a second resistor; the first metal via hole penetrates through the first dielectric plate; one end of the first metal straight line is connected with the first metal through hole, and the other end of the first metal straight line is connected with the first metal through hole of the adjacent structural unit;
the first T-shaped direct current power supply lead is connected with the second lossy resonator; voltage control is carried out on the radio frequency diode through the first metal through hole by utilizing the first T-shaped direct current power supply line;
the first metal reflecting surface is perpendicular to the first dielectric slab and is positioned far away from the first metal bent line end.
2. The reflective switchable three-dimensional broadband absorbing frequency selective structure of claim 1, wherein the first T-shaped dc power supply line is composed of a z-axis metal line and an x-axis metal line; the z-axis metal wire is connected with the first metal via hole of the second lossy resonator and the first metal straight line of the y-axis adjacent unit, and two ends of the x-axis metal wire are connected with the x-axis metal wire of the first T-shaped direct current power supply lead of the x-axis adjacent unit; only one T-shaped direct current supply lead is ensured in each unit, and a parasitic resonance mode caused by the introduction of the direct current supply lead is eliminated.
3. The reflective switchable three-dimensional broadband absorbing frequency selective structure of claim 1, wherein the width w of the first metal meander linemMust satisfy the condition w1≤wm≤6*w1Wherein w is1Indicating the width of the first parallel metal double line.
4. The reflective switchable three-dimensional broadband absorbing frequency selective structure of claim 1, wherein the shortest distance d between the second lossy resonator and the first metal reflective surface1Satisfies the condition 4b/9 ≤ d15b/9, wherein b represents the width of the first metal reflecting surface in the x-axis direction.
5. The reflective switchable three-dimensional broadband absorbing frequency selective structure as claimed in claim 1, wherein the shortest x-axis width distance d between the first T-shaped dc power supply line and the first parallel metal pair2D is not less than 0.2b2Less than or equal to 0.8 b; distance d between the first T-shaped DC power supply lead and the first metal reflecting surface1-l1Satisfies the condition that (d) is not less than 0.4 x (L-L)1-l1) Less than or equal to 0.6 x (L-L), thereby avoiding the resonance influence performance caused by coupling generated by excessive approach of metal structures; wherein l1The length of the metal wire in the z-axis direction of the first T-shaped direct current power supply lead is shown, L is the length of the first dielectric plate in the z-axis direction, and L is the length of the first parallel metal double wire in the z-axis direction.
6. The reflective band switchable three-dimensional broadband absorbing frequency selective structure of claim 1, wherein the first and second lossy resonators have complementary operating frequencies.
7. The reflection band switchable three-dimensional broadband absorption frequency selective structure according to claim 1, wherein when electromagnetic waves are incident on the surface of the structure, the first lossy resonator, working in combination with the first metal reflective surface, forms an absorption band at the fundamental mode frequency and a wide reflection band at the third mode frequency, respectively; when the second lossy resonator works in combination with the first metal reflecting surface, a wave absorbing band is formed, and the working frequency of the wave absorbing band is the same as the second-order mode frequency of the first lossy resonator; the wave-absorbing frequency bands of the two lossy resonators are complementary; the second lossy resonator is controlled by using external voltage, when the diode is conducted, the second lossy resonator works, and the first lossy resonator absorbs the electromagnetic waves which cannot be absorbed at the second-order mode, so that an extremely wide complete wave-absorbing band is formed; when the diode is switched off, the second lossy resonator does not work, only the first lossy resonator works, the whole structure forms a wide absorption band at the frequency of the basic mode and the frequency of the third mode, and the whole structure presents a broadband reflection characteristic at the frequency of the second mode.
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| CN113708080A (en) * | 2021-09-03 | 2021-11-26 | 南京大学 | Efficient phase dynamically adjustable reflection super-structure surface |
| CN116387841A (en) * | 2023-05-30 | 2023-07-04 | 南京邮电大学 | 1-bit electronically controlled reconfigurable transmission array antenna with three-dimensional frequency selective structure |
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