CN115473051A - Electromagnetic wave absorbing structure - Google Patents
Electromagnetic wave absorbing structure Download PDFInfo
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- CN115473051A CN115473051A CN202211287480.5A CN202211287480A CN115473051A CN 115473051 A CN115473051 A CN 115473051A CN 202211287480 A CN202211287480 A CN 202211287480A CN 115473051 A CN115473051 A CN 115473051A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q17/00—Devices for absorbing waves radiated from an antenna; Combinations of such devices with active antenna elements or systems
- H01Q17/008—Devices for absorbing waves radiated from an antenna; Combinations of such devices with active antenna elements or systems with a particular shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
- H01Q15/0006—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
- H01Q15/0013—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K9/00—Screening of apparatus or components against electric or magnetic fields
- H05K9/0073—Shielding materials
- H05K9/0081—Electromagnetic shielding materials, e.g. EMI, RFI shielding
- H05K9/0088—Electromagnetic shielding materials, e.g. EMI, RFI shielding comprising a plurality of shielding layers; combining different shielding material structure
Abstract
The invention provides an electromagnetic wave absorbing structure, which comprises: the surface dielectric array layer, the impedance layer, the dielectric layer and the metal layer from top to bottom, wherein, including impedance type frequency selective surface in the impedance layer, impedance type frequency selective surface includes at least one conducting ring, and evenly distributed has a plurality of resistances in arbitrary conducting ring. The electromagnetic wave-absorbing structure can improve the wave-absorbing performance of the incident electromagnetic waves.
Description
Technical Field
The invention relates to the technical field of electromagnetic wave absorption, in particular to an electromagnetic wave absorption structure.
Background
Electromagnetic (EM) wave absorbing structures are widely applied to satellite navigation systems, electromagnetic compatibility, stealth fields and the like.
In present electromagnetism absorbing structure, absorbing structure's absorbing performance is relatively poor when the electromagnetic wave is incident, for example, at present electromagnetism absorbing structure, when electromagnetic wave oblique incidence electromagnetism absorbing structure, the incident angle stability of electromagnetic wave is relatively poor, for this reason, need a neotype electromagnetism absorbing structure in order to improve electromagnetism absorbing structure's incident angle stability urgently to absorbing structure's absorbing performance when promoting the electromagnetic wave is incident.
Disclosure of Invention
The invention aims to provide an electromagnetic wave absorbing structure which can improve the wave absorbing performance when electromagnetic waves are incident.
In order to achieve the above object, in a first aspect, the present invention provides an electromagnetic wave absorbing structure, including:
the surface dielectric array layer, the impedance layer, the dielectric layer and the metal layer from top to bottom, wherein, including impedance type frequency selective surface in the impedance layer, impedance type frequency selective surface includes at least one conducting ring, and evenly distributed has a plurality of resistances in arbitrary conducting ring.
Optionally, the impedance layer further includes:
and the impedance matching dielectric layer is positioned between the surface dielectric array layer and the impedance type frequency selection surface and is used for isolating the surface dielectric array layer from the impedance type frequency selection surface.
Optionally, the impedance layer further includes:
the impedance type frequency selective surface substrate is positioned at the bottom of the impedance type frequency selective surface and used for supporting the impedance type frequency selective surface.
Optionally, the conductive ring is a regular hexagon conductive ring, 12 resistors are uniformly arranged on the regular hexagon conductive ring, the resistors are located at the center position and the vertex position of the ring edge of the conductive ring, and the distances between adjacent resistors are the same.
Optionally, the length of the edge of the regular hexagonal conductive ring ranges from 3.9 to 4.1mm, the width of the edge of the regular hexagonal conductive ring ranges from 0.9 to 1.1mm, the distance between two adjacent regular hexagonal conductive rings ranges from 0.6 to 1.0mm, the range of a gap for loading a resistor on the regular hexagonal conductive ring ranges from 0.1 to 1.0mm, and the resistance range of the resistor ranges from 75 to 85 Ω.
Optionally, the regular hexagonal conductive ring is obtained by spray printing, electrochemical corrosion or magnetron sputtering, and the material of the regular hexagonal conductive ring is one of gold, silver and copper; the resistors in the regular hexagonal conductive ring comprise: lumped chip resistor element or one or more equivalent resistors prepared by one or more methods of magnetron sputtering, screen printing and jet printing.
Optionally, the impedance type frequency selective surface substrate is one or more of a PI film, a PEN film, an FR4 board, and an F4B board, and a substrate thickness range of the impedance type frequency selective surface substrate is 0.02 to 0.5mm.
Optionally, the resistive frequency selective surface substrate is an FR4 board, and the substrate thickness range of the FR4 board is 0.1-0.4 mm, where the relative dielectric constant range of the FR4 board is 4.2-4.5, and the loss tangent angle is 0.0025.
Optionally, the relative dielectric constant range corresponding to the material of the dielectric layer is 1.01-1.08, and the thickness range of the dielectric layer is 2.9-3.3 mm; the impedance matching dielectric layer in the impedance layer and the dielectric layer are made of the same material and have the same thickness; the metal layer is made of copper.
Optionally, the electromagnetic wave absorbing structure is formed by performing a hot pressing process on a surface layer medium array layer, an impedance matching medium layer, an impedance frequency selective surface substrate, a medium layer and a metal layer, the surface layer medium array layer of the electromagnetic wave absorbing structure is generated by engraving a surface layer array material layer by using an engraving machine after the hot pressing process, and the surface layer array material layer is used for generating a surface layer medium array layer.
Based on the above, the present invention provides an electromagnetic wave absorbing structure, including: the surface dielectric array layer, the impedance layer, the dielectric layer and the metal layer from top to bottom, wherein, including impedance type frequency selective surface in the impedance layer, impedance type frequency selective surface includes at least one conducting ring, and evenly distributed has a plurality of resistances in arbitrary conducting ring. Therefore, the impedance type frequency selective surface of the electromagnetic wave absorbing structure in the embodiment of the invention comprises the conducting ring, when electromagnetic waves enter the electromagnetic wave absorbing structure, the conducting ring in the impedance type frequency selective surface generates surface induced current, the electromagnetic energy is converted into heat to realize energy loss, and the stability of the incident angle of the electromagnetic waves entering the electromagnetic wave absorbing structure is enhanced.
Furthermore, the surface medium array layer in the embodiment of the invention can perform impedance compensation on the whole structure of the electromagnetic wave-absorbing structure in an electromagnetic wave incident state, thereby realizing wider wave-absorbing bandwidth in an oblique incident state and maintaining excellent wave-absorbing performance.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
Fig. 1 is a schematic structural diagram of an electromagnetic wave-absorbing structure provided in an embodiment of the present invention;
fig. 2 is a schematic structural diagram corresponding to an electromagnetic wave-absorbing structure in an embodiment of the present invention;
FIG. 3 is a schematic diagram of an arrangement of conductive rings according to an embodiment of the present invention;
FIG. 4 is a diagram illustrating a TE wave reflectivity curve obtained by loading resistors with different resistances into a regular hexagonal ring unit of an impedance type frequency selective surface when electromagnetic waves are incident perpendicularly according to an embodiment of the present invention;
FIG. 5 is a schematic diagram illustrating a variation of reflectivity of a wave-absorbing structure with a side length of a regular hexagonal ring unit of an impedance-type frequency selective surface when a TE wave is perpendicularly incident in an embodiment of the present invention;
FIG. 6 is a schematic diagram of a curve showing the reflectivity of the wave-absorbing structure varying with the widths of six sides of a regular hexagonal ring unit of the impedance-type frequency selective surface when a TE wave is perpendicularly incident according to the embodiment of the present invention;
FIG. 7 is a schematic diagram of a curve showing the reflectivity of the wave-absorbing structure varying with the spacing between regular hexagonal ring units of the impedance-type frequency selective surface when TE waves are incident perpendicularly in the embodiment of the present invention;
FIG. 8 is a schematic diagram of a curve that the reflectivity of the wave-absorbing structure changes with the thickness of the surface medium array unit when TE waves are perpendicularly incident in the embodiment of the present invention;
FIG. 9 is a graph illustrating the TE wave reflectivity with frequency variation for different incident angles according to an embodiment of the present invention;
FIG. 10 is a diagram illustrating TE wave absorption rate versus frequency variation at different incident angles according to an embodiment of the present invention;
FIG. 11 is a diagram illustrating the variation of the reflectivity of the TM wave with frequency according to different incident angles in the embodiment of the present invention;
fig. 12 is a schematic diagram of a graph of the TM wave absorption rate with frequency variation corresponding to different incident angles in the embodiment of the present invention.
Detailed Description
Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below with reference to the drawings are illustrative and intended to be illustrative of the invention and are not to be construed as limiting the invention.
The electromagnetic wave-absorbing structure is a high-performance wave-absorbing structure obtained by combining a Jaumann wave-absorbing structure and a metal frequency selective surface. Compared with a full-resistance film impedance layer in a Jaumann structure, the impedance type frequency selective surface in the electromagnetic wave-absorbing structure realizes multiple resonance by introducing equivalent capacitance and equivalent inductance, and meanwhile, the multi-layer technology can overcome the limitation of narrow band and over-thick thickness, thereby greatly widening the application prospect of the wave-absorbing structure.
Fig. 1 is a schematic structural diagram of an electromagnetic wave-absorbing structure provided in an embodiment of the present invention. Referring to fig. 1, the electromagnetic wave absorbing structure specifically includes:
the surface dielectric array layer comprises a surface dielectric array layer 10, a resistance layer 20, a dielectric layer 30 and a metal layer 40 from top to bottom, wherein the resistance layer 20 comprises a resistance type frequency selective surface 22, the resistance type frequency selective surface 22 comprises at least one conductive ring, and a plurality of resistors are uniformly distributed in any conductive ring.
In one embodiment, the conductive ring is a regular hexagon conductive ring, 12 resistors are uniformly arranged on the regular hexagon conductive ring, the resistors are located at the center of the ring edge of the conductive ring, and the distances between adjacent resistors are the same.
More specifically, referring to fig. 1, the resistance layer 20 further includes: and the impedance matching dielectric layer 21 is positioned between the surface dielectric array layer 10 and the impedance type frequency selection surface 22, and is used for isolating the surface dielectric array layer 10 from the impedance type frequency selection surface 22.
The relative dielectric constant range corresponding to the material of the impedance matching dielectric layer 21 is 1.01-1.08, and the thickness range of the impedance matching dielectric layer is 2.9-3.3 mm.
In other embodiments of the present application, the resistance layer 20 further includes: an impedance type frequency selective surface substrate 23, wherein the impedance type frequency selective surface substrate 23 is located at the bottom of the impedance type frequency selective surface 22 and is used for supporting the impedance type frequency selective surface 22.
Specifically, the resistive frequency selective surface substrate is one or more of a PI film, a PEN film, an FR4 plate, and an F4B plate, and the substrate thickness of the resistive frequency selective surface substrate is in a range of 0.02 to 0.5mm. When the impedance type frequency selective surface substrate is an FR4 board, the substrate thickness of the FR4 board is in the range of 0.1-0.4 mm, wherein the relative dielectric constant of the FR4 board is in the range of 4.2-4.5, and the loss tangent angle is 0.0025. In one embodiment of the present application, the resistive frequency selective surface substrate is an FR4 board with a relative dielectric constant of 4.3 and a loss tangent angle of 0.0025, which corresponds to a thickness of 0.3mm.
Fig. 2 is a structural schematic diagram corresponding to the electromagnetic wave-absorbing structure in the embodiment of the invention. FIG. 3 is a schematic diagram of an arrangement of conductive rings according to an embodiment of the invention. Referring to fig. 2-3, the electromagnetic wave absorbing structure is a regular hexagonal body as a whole. The impedance type frequency selective surface 22 of the electromagnetic wave absorbing structure comprises a regular hexagonal conductive ring 221, and a plurality of resistors 2211 are uniformly distributed in any regular hexagonal conductive ring 221. The overall shape of the structural schematic diagram of the regular hexagonal conductive ring 221 is a regular hexagon, and the regular hexagonal conductive ring 221 is formed by preparing the impedance type frequency selective surface substrate through a magnetron sputtering method, wherein 12 resistors are uniformly arranged on the regular hexagonal conductive ring 221, the resistors are located at the center position and the vertex position of the ring edge of the regular hexagonal conductive ring, and the distances between adjacent resistors are the same.
In one embodiment, the regular hexagonal conductive rings in the electromagnetic wave absorbing structure are distributed in sequence, the period in the X-axis direction is 13.73mm, the period in the Y-axis direction is 7.93mm, and the Grid angle (Grid angle) of adjacent regular hexagonal conductive rings is 30 °.
An alternative implementation manner of generating the regular hexagonal conductive loop on the impedance-type frequency selective surface may be: generating a corresponding regular hexagon conducting ring on the impedance type frequency selective surface substrate through spray printing, electrochemical corrosion or magnetron sputtering, the material of the regular hexagonal conducting ring is one or more of gold, silver and copper. In one embodiment, a metallic copper material may be deposited on the resistive frequency selective surface substrate, thereby creating a regular hexagonal conductive ring of metallic copper material.
The length range of the ring edge of the regular hexagonal conducting ring is 3.9-4.1 mm, the width range of the ring edge of the regular hexagonal conducting ring is 0.9-1.1 mm, the distance range between two adjacent regular hexagonal conducting rings is 0.6-1.0 mm, the range of a gap for loading a resistor on the regular hexagonal conducting ring is 0.1-1.0 mm, and the resistance range of the resistor is 75-85 omega. In an alternative embodiment, the length of the edge of the regular hexagonal conductive ring is 4.0mm, the width of the edge of the regular hexagonal conductive ring is 1.0mm, the distance between two adjacent regular hexagonal conductive rings is 0.8mm, and the gap for loading the resistor on the regular hexagonal conductive ring is 0.8mm.
Further, the resistors in the regular hexagonal conductive ring include: lumped chip resistor element or one or more equivalent resistors prepared by one or more methods of magnetron sputtering, screen printing and jet printing. That is to say, in the embodiment of the present invention, at the middle position or the vertex position of each edge of the regular hexagonal conductive ring, the lumped patch resistor element may be loaded as a resistor, and the resistance value of the resistor is 81 Ω; the regular hexagonal conductive ring and the resistor are both located on the impedance type frequency selective surface.
The relative dielectric constant range corresponding to the material of the dielectric layer 30 is 1.01-1.08, and the thickness range of the dielectric layer is 2.9-3.3 mm. Alternatively, the dielectric layer 30 may be a PMI foam having a relative dielectric constant of 1.05, and the thickness of the dielectric layer is 5.9mm.
The metal layer is made of copper, and the thickness of the metal layer is 0.035mm.
In an embodiment of the present application, the electromagnetic wave absorbing structure may be formed by a hot pressing process based on the surface layer dielectric array layer 10, the impedance matching dielectric layer 21, the impedance type frequency selective surface 22, the impedance type frequency selective surface substrate 23, the dielectric layer 30, and the metal layer 40. Optionally, the hot-pressing process may be a vacuum hot-pressing process, and the surface layer dielectric array layer 10, the impedance matching dielectric layer 21, the impedance type frequency selective surface 22, the impedance type frequency selective surface substrate 23, the dielectric layer 30 and the metal layer 40 are combined by the vacuum hot-pressing process to form the electromagnetic wave absorbing structure.
Optionally, after the hot pressing process, the surface layer dielectric array material layer may be engraved by using an engraving machine to generate a surface layer dielectric array layer, where the surface layer dielectric array layer is used to generate the surface layer dielectric array layer. The surface dielectric array material layer is a whole block before being engraved by the engraving machine, is an FR4 plate with a relative dielectric constant of 4.3 and a loss tangent angle of about 0.0025, and has a thickness of 1.1mm.
And after engraving, obtaining a medium circular ring array, wherein the surface layer of the medium circular ring array is a medium array layer, the outer diameter of a circular ring in the medium array layer is 7.0mm, the inner diameter of the circular ring is 3.0mm, and the height of the circular ring is 1.1mm.
Simulation software is used for analyzing the electromagnetic wave absorbing structure prepared in the embodiment so as to determine the performance of the electromagnetic wave absorbing structure in the embodiment of the invention.
Fig. 4 is a schematic diagram illustrating a TE wave reflectivity variation curve obtained by loading resistors with different resistances on the regular hexagonal ring unit of the impedance-type frequency selective surface when electromagnetic waves are vertically incident according to an embodiment of the present invention. As shown in fig. 5, it is a TE wave (electromagnetic wave) reflectivity variation curve obtained by loading resistors with different resistances on the impedance type frequency selective surface regular hexagonal conductive ring when the electromagnetic wave is vertically incident. In the embodiment, within the range of 75-85 omega of input resistance, the absorption of-20 dB can be realized within the broadband range all the time, and the stability is good.
Fig. 5 is a schematic diagram of the reflectivity of the wave-absorbing structure varying with the side length of the regular hexagonal ring unit of the impedance-type frequency selective surface when the TE wave is vertically incident in the embodiment of the present invention. As shown in fig. 5, it is a curve that the reflectivity of the wave-absorbing structure changes with the side length of the regular hexagonal conductive ring of the impedance type frequency selective surface when TE waves are vertically incident. The side length of the ring edge of the frequency regular hexagon conducting ring is within the range of 3.9-4.1 mm, and the reflectivity can be kept to be 5.5-16.1 GHz lower than-20 dB.
Fig. 6 is a schematic diagram of a curve that the reflectivity of the wave-absorbing structure varies with the widths of six sides of the regular hexagonal ring unit of the impedance-type frequency selective surface when a TE wave is perpendicularly incident in the embodiment of the present invention. As shown in fig. 6, when TE waves are vertically incident, the reflectivity of the wave-absorbing structure is a curve that varies with the widths of six sides of the regular hexagonal conductive ring on the impedance-type frequency selective surface. The width of the annular edge of the frequency selection surface unit is within the range of 0.9-1.1 mm, and the reflectivity can be kept to be lower than-20 dB within the range of 5.5-16.0 GHz.
Fig. 7 is a schematic diagram of a curve that the reflectivity of the wave-absorbing structure varies with the regular hexagonal ring unit spacing of the impedance-type frequency selective surface when TE waves are perpendicularly incident in the embodiment of the present invention. As shown in fig. 7, when TE waves are vertically incident, the reflectivity of the wave-absorbing structure varies with the pitch of the regular hexagonal conductive ring on the impedance-type frequency selective surface. The distance between adjacent units on the frequency selective surface is in the range of 0.6-1.0 mm, and the absorption of-20 dB can be realized in a broadband range.
Fig. 8 is a schematic diagram of a curve that the reflectivity of the wave-absorbing structure changes with the thickness of the surface dielectric array unit when TE waves are vertically incident in the embodiment of the present invention. As shown in fig. 8, when TE waves are vertically incident, the reflectivity of the wave-absorbing structure changes along with the thickness of the surface dielectric array unit. In the embodiment, the surface dielectric array unit can realize-20 dB absorption in a broadband range within the range of 0.9-1.3 mm in thickness.
Fig. 4 to 8 show that the impedance type frequency selective surface of the electromagnetic wave absorbing structure provided in this embodiment includes a conductive ring, and when electromagnetic waves are incident on the electromagnetic wave absorbing structure, the conductive ring in the impedance type frequency selective surface generates surface induced current to convert electromagnetic energy into heat to realize energy loss, so as to enhance the stability of the incident angle of the electromagnetic waves incident on the electromagnetic wave absorbing structure.
Furthermore, the surface medium array layer in the embodiment of the invention performs impedance compensation on the whole structure of the electromagnetic wave-absorbing structure in the electromagnetic wave incident state, thereby realizing wider wave-absorbing bandwidth in the oblique incident state and maintaining excellent wave-absorbing performance.
In addition, the electromagnetic wave absorbing structure has the characteristic of insensitivity of structural parameters, has high tolerance and is beneficial to actual production and manufacturing.
FIG. 9 is a diagram illustrating the TE wave reflectivity with frequency variation corresponding to different incident angles according to an embodiment of the present invention. Fig. 10 is a schematic diagram of a TE wave absorption rate versus frequency variation corresponding to different incident angles in an embodiment of the present invention. Referring to fig. 9-10, when the electromagnetic waves are perpendicular, the frequency band of the wave-absorbing structure of the invention with reflectivity lower than-10 dB is 4.36-18.09GHz; the band with reflectivity lower than-20 dB is 5.32-16.46GHz. When the incident angle of the electromagnetic wave is 30 degrees, the frequency band with the reflectivity lower than-10 dB is 4.43-20.46GHz; the frequency band with reflectivity lower than-20 dB is 5.42-19.04GHz. When the incident angle of the electromagnetic wave is 40 degrees, the frequency band with the reflectivity lower than-10 dB is 4.51-22.43GHz; the band with reflectivity lower than-15 dB is 5.14-21.64GHz. When the incident angle of the electromagnetic wave is 50 degrees, the frequency band with the reflectivity lower than-10 dB is 4.73-23.59GHz. When the incident angle of the electromagnetic wave is 60 degrees, the frequency band with the reflectivity lower than-10 dB is 5.48-18.00GHz.
Therefore, the electromagnetic wave absorbing structure in the embodiment of the invention has extremely strong oblique incidence stability and wave absorbing performance in an ultra-wideband range (such as-20 dB).
Further, fig. 11 is a schematic diagram of a graph of TM wave reflectivity with frequency variation corresponding to different incident angles in an embodiment of the present invention. Fig. 12 is a schematic diagram of a graph of the TM wave absorption rate with frequency variation corresponding to different incident angles in the embodiment of the present invention. Referring to fig. 11-12, when the electromagnetic waves are vertical, the frequency band with reflectivity lower than-10 dB is 4.36-18.09GHz; the band with reflectivity lower than-20 dB is 5.32-16.46GHz. When the incident angle of the electromagnetic wave is 20 degrees, the frequency band with the reflectivity lower than-10 dB is 4.69-18.84GHz; the band with reflectivity lower than-20 dB is 5.85-17.01GHz. When the incident angle of the electromagnetic wave is 40 degrees, the frequency band with the reflectivity lower than-10 dB is 6.09-20.61GHz.
Based on the above, the electromagnetic wave absorbing structure in the embodiment of the invention has the following advantages:
firstly, a surface layer medium array layer in the electromagnetic wave-absorbing structure in the embodiment of the invention is arranged on an impedance layer, the surface layer medium array layer can cover the impedance layer, and the service life of the impedance layer is greatly prolonged; furthermore, the circular ring (as shown in fig. 2) on the surface medium array layer can be matched and compensated with the oblique incidence impedance, so that the incident angle stability of the electromagnetic wave absorbing structure is greatly improved.
Furthermore, the optimization of impedance matching brought by the cooperative design of the surface medium array layer and the impedance matching medium layer in the impedance layer in the embodiment of the invention enables more electromagnetic waves to enter the electromagnetic wave-absorbing structure, widens the wave-absorbing bandwidth and further improves the wave-absorbing performance.
In addition, the impedance type frequency selection surface in the embodiment of the invention has very wide bandwidth electromagnetic energy absorption and good impedance matching, so that when the impedance type frequency selection surface generates the conductive ring, the conductive ring can realize the absorption with high bandwidth performance.
Moreover, the impedance type frequency selective surface substrate is made of a lossy medium material, and is beneficial to improving the wave absorption performance under a certain thickness; meanwhile, the center of the layer is provided with a hole, and the wave transmittance of the substrate is optimized due to the hole, so that the promotion effect on further resonant loss is achieved.
Furthermore, the embodiment of the invention also discloses a dielectric layer, the thickness of the dielectric layer determines the frequency point of resonance loss, the material and the thickness of the dielectric layer in the application can be matched with the impedance type frequency selection surface, and the high-performance absorption of the broadband is further improved.
Finally, the metal layer in the embodiment of the invention is used as an electromagnetic wave reflecting plate and can reflect electromagnetic waves, so that further resonance loss of the metal layer in the impedance type frequency selective surface layer and the surface layer medium array layer is realized. In addition, the electromagnetic wave absorbing structure in the embodiment of the invention has wide application prospect in the fields of microwave stealth technology, antenna, electromagnetic compatibility and the like.
Based on the above, the electromagnetic wave absorbing structure in the embodiment of the invention is superior to the existing design, when the electromagnetic waves are vertical, the frequency band with the reflectivity lower than-10 dB is 4.36-18.09GHz; the band with reflectivity lower than-20 dB is 5.32-16.46GHz. When the incident angle of the electromagnetic wave is 30 degrees, the frequency band with the reflectivity lower than-10 dB is 4.43-20.46GHz; the frequency band with reflectivity lower than-20 dB is 5.42-19.04GHz. When the incident angle of the electromagnetic wave is 40 degrees, the frequency band with the reflectivity lower than-10 dB is 4.51-22.43GHz; the band with reflectivity lower than-15 dB is 5.14-21.64GHz. When the incident angle of the electromagnetic wave is 50 degrees, the frequency band with the reflectivity lower than-10 dB is 4.73-23.59GHz. When the incident angle of the electromagnetic wave is 60 degrees, the frequency band with the reflectivity lower than-10 dB is 5.48-18.00GHz. Has extremely strong oblique incidence stability and-20 dB wave absorbing performance in an ultra wide band range. Furthermore, the wave-absorbing structure meets the outdoor application scene to a certain extent.
While various embodiments of the present invention have been described above, various alternatives described in the various embodiments can be combined and cross-referenced without conflict to extend the variety of possible embodiments that can be considered disclosed and disclosed in connection with the embodiments of the present invention.
Although the embodiments of the present invention have been disclosed, the present invention is not limited thereto. Various changes and modifications may be effected therein by one skilled in the art without departing from the spirit and scope of the invention as defined in the appended claims.
Claims (10)
1. An electromagnetic wave absorbing structure, comprising:
the surface medium array layer, the impedance layer, the dielectric layer and the metal layer from top to bottom, wherein, the impedance layer includes impedance type frequency selective surface, impedance type frequency selective surface includes at least one conducting ring, and evenly distributed has a plurality of resistances in arbitrary conducting ring.
2. The electromagnetic wave absorbing structure of claim 1, wherein the impedance layer further comprises:
and the impedance matching dielectric layer is positioned between the surface dielectric array layer and the impedance type frequency selection surface and is used for isolating the surface dielectric array layer from the impedance type frequency selection surface.
3. The electromagnetic wave absorbing structure of claim 2, wherein the impedance layer further comprises:
the impedance type frequency selective surface substrate is positioned at the bottom of the impedance type frequency selective surface and used for supporting the impedance type frequency selective surface.
4. The electromagnetic wave absorbing structure of claim 1, wherein the conductive ring is a regular hexagonal conductive ring, 12 resistors are uniformly arranged on the regular hexagonal conductive ring, the resistors are located at the center and the top of the ring edge of the conductive ring, and the distances between adjacent resistors are the same.
5. The electromagnetic wave absorbing structure of claim 4, wherein the length of the edge of the regular hexagonal conductive ring ranges from 3.9 to 4.1mm, the width of the edge of the regular hexagonal conductive ring ranges from 0.9 to 1.1mm, the distance between two adjacent regular hexagonal conductive rings ranges from 0.6 to 1.0mm, the gap on the regular hexagonal conductive ring for loading the resistor ranges from 0.1 to 1.0mm, and the resistance of the resistor ranges from 75 to 85 Ω.
6. The electromagnetic wave absorbing structure of claim 5, wherein the regular hexagonal conductive ring is obtained by spray printing, electrochemical corrosion or magnetron sputtering, and the material of the regular hexagonal conductive ring is one of gold, silver and copper; the resistors in the regular hexagonal conductive ring comprise: the equivalent resistor is one or more of lumped chip resistor elements or equivalent resistors prepared by one or more of magnetron sputtering, screen printing and jet printing.
7. The structure of claim 3, wherein the resistive frequency selective surface substrate is one or more of a PI film, a PEN film, an FR4 board, and an F4B board, and the substrate thickness of the resistive frequency selective surface substrate is in the range of 0.02-0.5 mm.
8. The electromagnetic wave absorbing structure of claim 7, wherein the resistive frequency selective surface substrate is an FR4 board, and the substrate thickness of the FR4 board is in the range of 0.1-0.4 mm, wherein the relative permittivity of the FR4 board is in the range of 4.2-4.5, and the loss tangent angle is 0.0025.
9. The electromagnetic wave absorbing structure of claim 2, wherein the material of the dielectric layer has a corresponding relative dielectric constant in a range of 1.01 to 1.08, and the dielectric layer has a thickness in a range of 2.9 to 3.3mm; the impedance matching dielectric layer in the impedance layer and the dielectric layer are made of the same material and have the same thickness; the metal layer is made of copper.
10. The electromagnetic wave absorbing structure of claim 3, wherein the electromagnetic wave absorbing structure is formed by a hot-pressing process on a surface layer medium array layer, an impedance matching medium layer, an impedance frequency selective surface substrate, a medium layer and a metal layer, the surface layer medium array layer of the electromagnetic wave absorbing structure is generated by engraving a surface layer array material layer by using an engraving machine after the hot-pressing process, and the surface layer array material layer is used for generating the surface layer medium array layer.
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| CN116864994A (en) * | 2023-08-04 | 2023-10-10 | 中南大学 | Double-impedance-layer high-performance wave-absorbing structure |
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| CN114204279A (en) * | 2021-12-14 | 2022-03-18 | 中南大学 | Resistance loading quad ring ultra wide band absorbing structure |
| CN114336086A (en) * | 2022-01-06 | 2022-04-12 | 中南大学 | Ultra-wideband wave absorbing structure for reducing RCS (radar cross section) of antenna |
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| CN102291970A (en) * | 2011-05-06 | 2011-12-21 | 东南大学 | Single frequency band microwave absorber and multiple frequency band microwave absorber |
| CN104553221A (en) * | 2015-01-20 | 2015-04-29 | 浙江大学 | High-performance spectral selectivity wave-absorbing element and solar heat photovoltaic system |
| CN106207486A (en) * | 2016-07-13 | 2016-12-07 | 李寅辉 | A kind of Graphene prints absorbing material and preparation method thereof |
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| CN108400447A (en) * | 2018-02-07 | 2018-08-14 | 中南大学 | A kind of three-dimensional multiband radar absorbing material |
| CN114204279A (en) * | 2021-12-14 | 2022-03-18 | 中南大学 | Resistance loading quad ring ultra wide band absorbing structure |
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| CN116864994A (en) * | 2023-08-04 | 2023-10-10 | 中南大学 | Double-impedance-layer high-performance wave-absorbing structure |
| CN116864994B (en) * | 2023-08-04 | 2024-01-16 | 中南大学 | Double-impedance-layer high-performance wave-absorbing structure |
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