CN115473051B - Electromagnetic wave absorbing structure - Google Patents
Electromagnetic wave absorbing structure Download PDFInfo
- Publication number
- CN115473051B CN115473051B CN202211287480.5A CN202211287480A CN115473051B CN 115473051 B CN115473051 B CN 115473051B CN 202211287480 A CN202211287480 A CN 202211287480A CN 115473051 B CN115473051 B CN 115473051B
- Authority
- CN
- China
- Prior art keywords
- layer
- electromagnetic wave
- absorbing structure
- wave absorbing
- type frequency
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q17/00—Devices for absorbing waves radiated from an antenna; Combinations of such devices with active antenna elements or systems
- H01Q17/008—Devices for absorbing waves radiated from an antenna; Combinations of such devices with active antenna elements or systems with a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
- H01Q15/0006—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
- H01Q15/0013—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K9/00—Screening of apparatus or components against electric or magnetic fields
- H05K9/0073—Shielding materials
- H05K9/0081—Electromagnetic shielding materials, e.g. EMI, RFI shielding
- H05K9/0088—Electromagnetic shielding materials, e.g. EMI, RFI shielding comprising a plurality of shielding layers; combining different shielding material structure
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Aerials With Secondary Devices (AREA)
Abstract
The invention provides an electromagnetic wave-absorbing structure, which comprises: the impedance type frequency selective surface comprises at least one conducting ring, and a plurality of resistors are uniformly distributed in any conducting ring. The electromagnetic wave absorbing structure can improve the wave absorbing performance of the electromagnetic wave when the electromagnetic wave is incident.
Description
Technical Field
The invention relates to the technical field of electromagnetic wave absorption, in particular to an electromagnetic wave absorption structure.
Background
Electromagnetic (EM) wave absorbing structures are widely used in satellite navigation systems, electromagnetic compatibility, stealth areas, etc.
In the current electromagnetic wave-absorbing structure, the wave-absorbing performance of the wave-absorbing structure is poor when an electromagnetic wave is incident, for example, in the current electromagnetic wave-absorbing structure, when the electromagnetic wave is obliquely incident to the electromagnetic wave-absorbing structure, the incident angle stability of the electromagnetic wave is poor, therefore, a novel electromagnetic wave-absorbing structure is needed to improve the incident angle stability of the electromagnetic wave-absorbing structure, so that the wave-absorbing performance of the wave-absorbing structure when the electromagnetic wave is incident is improved.
Disclosure of Invention
The invention aims to provide an electromagnetic wave absorbing structure which can improve the wave absorbing performance when electromagnetic waves are incident.
To achieve the above object, in a first aspect, the present invention provides an electromagnetic wave absorbing structure, comprising:
the impedance type frequency selective surface comprises at least one conducting ring, and a plurality of resistors are uniformly distributed in any conducting ring.
Optionally, the impedance layer further includes:
and the impedance matching medium layer is positioned between the surface layer medium array layer and the impedance type frequency selection surface and is used for isolating the surface layer medium array layer and the impedance type frequency selection surface.
Optionally, the impedance layer further includes:
and the impedance type frequency selection surface substrate is positioned at the bottom of the impedance type frequency selection surface and is used for supporting the impedance type frequency selection surface.
Optionally, the conducting ring is regular hexagon conducting ring, evenly be provided with 12 resistance on the regular hexagon conducting ring, the resistance is located the central point position and the summit position of conducting ring's ring limit, and the distance between the adjacent resistance is the same.
Optionally, the length of the edge of the regular hexagonal conductive ring ranges from 3.9 mm to 4.1mm, the width of the edge of the regular hexagonal conductive ring ranges from 0.9 mm to 1.1mm, the distance between two adjacent regular hexagonal conductive rings ranges from 0.6 mm to 1.0mm, the gap range for loading the resistor on the regular hexagonal conductive ring ranges from 0.1 mm to 1.0mm, and the resistance value range of the resistor ranges from 75 Ω to 85 Ω.
Optionally, the regular hexagonal conductive ring is obtained through spray printing, electrochemical corrosion or magnetron sputtering, and the material of the regular hexagonal conductive ring is one of gold, silver and copper; the resistance in the regular hexagonal conductive ring comprises: lumped chip resistor elements or equivalent resistors prepared by one or more methods of magnetron sputtering, screen printing and jet printing.
Optionally, the impedance type frequency selective surface substrate is one or more of a PI film, a PEN film, an FR4 board and an F4B board, and the thickness of the impedance type frequency selective surface substrate ranges from 0.02 mm to 0.5mm.
Optionally, the impedance type frequency selective surface substrate is an FR4 board, and the thickness of the substrate of the FR4 board ranges from 0.1 mm to 0.4mm, wherein the relative dielectric constant of the FR4 board ranges from 4.2 mm to 4.5 mm, and the loss tangent angle is 0.0025.
Optionally, the material of the dielectric layer corresponds to a relative dielectric constant ranging from 1.01 to 1.08, and the thickness of the dielectric layer ranges from 2.9 to 3.3mm; the impedance matching dielectric layer in the impedance layer and the dielectric layer are the same in material and thickness; the metal layer is made of copper.
Optionally, the electromagnetic wave absorbing structure is formed by a hot pressing process of a surface layer dielectric array layer, an impedance matching dielectric layer, an impedance type frequency selective surface substrate, a dielectric layer and a metal layer, the surface layer dielectric array layer of the electromagnetic wave absorbing structure is formed by carving a surface layer array material layer by using a carving machine after the hot pressing process, and the surface layer array material layer is used for generating the surface layer dielectric array layer.
Based on the above, the present invention provides an electromagnetic wave absorbing structure, comprising: the impedance type frequency selective surface comprises at least one conducting ring, and a plurality of resistors are uniformly distributed in any conducting ring. Therefore, when the electromagnetic wave is incident into the electromagnetic wave absorbing structure, the conductive ring in the impedance type frequency selective surface generates surface induction current, so that the electromagnetic energy is converted into heat to realize energy loss, the stability of the incident angle of the electromagnetic wave incident into the electromagnetic wave absorbing structure is enhanced, and the wave absorbing performance of the electromagnetic wave absorbing structure can be improved.
Furthermore, the surface layer medium array layer in the embodiment of the invention can carry out impedance compensation on the whole structure of the electromagnetic wave absorbing structure in the electromagnetic wave incident state, thereby realizing wider wave absorbing bandwidth in the oblique incident state and maintaining excellent wave absorbing performance.
Drawings
In order to more clearly illustrate the embodiments of the invention or the technical solutions in the prior art, the drawings that are required in the embodiments or the description of the prior art will be briefly described, it being obvious that the drawings in the following description are only some embodiments of the invention, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic structural diagram of an electromagnetic wave absorbing structure according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of another electromagnetic wave absorbing structure according to an embodiment of the present invention;
FIG. 3 is a schematic diagram illustrating an arrangement of conductive rings according to an embodiment of the present invention;
FIG. 4 is a schematic diagram of a curve of TE wave reflectivity change obtained by loading resistors with different resistance values on an impedance type frequency selective surface regular hexagonal ring unit when electromagnetic waves are perpendicularly incident in the embodiment of the present invention;
FIG. 5 is a schematic diagram showing the reflectivity of the wave absorbing structure according to the side length of the regular hexagonal ring unit of the impedance type frequency selective surface when TE waves are perpendicularly incident in the embodiment of the present invention;
FIG. 6 is a graph showing the reflectivity of the wave absorbing structure according to the width of six sides of a regular hexagonal ring unit of an impedance type frequency selective surface when TE waves are perpendicularly incident;
FIG. 7 is a graph showing the reflectivity of the wave-absorbing structure as a function of the regular hexagonal ring cell pitch of the impedance-type frequency selective surface when TE waves are perpendicularly incident in an embodiment of the present invention;
FIG. 8 is a schematic diagram of a curve of reflectivity of a wave absorbing structure according to thickness variation of a surface medium array unit when TE waves are perpendicularly incident in an embodiment of the present invention;
FIG. 9 is a diagram showing the frequency dependence of TE wave reflectivity corresponding to different incident angles according to an embodiment of the present invention;
FIG. 10 is a diagram showing a frequency-dependent plot of TE wave absorption corresponding to different incident angles according to an embodiment of the present invention;
FIG. 11 is a diagram showing the frequency dependence of the TM wave reflectivity corresponding to different incident angles according to an embodiment of the present invention;
fig. 12 is a schematic diagram of a frequency-dependent graph of TM wave absorption corresponding to different incident angles in an embodiment of the present invention.
Detailed Description
Embodiments of the present invention are described in detail below, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to like or similar elements or elements having like or similar functions throughout. The embodiments described below by referring to the drawings are illustrative and intended to explain the present invention and should not be construed as limiting the invention.
The electromagnetic wave-absorbing structure is a high-performance wave-absorbing structure obtained by combining a Jaumann wave-absorbing structure with a metal frequency selective surface. Compared with a full-resistance film impedance layer in a Jaumann structure, the impedance type frequency selection surface in the electromagnetic wave-absorbing structure realizes multiple resonance by introducing an equivalent capacitor and an equivalent inductor, and meanwhile, the multi-layer technology can overcome the limitation of narrow band and excessive thickness, and greatly widens the application prospect of the wave-absorbing structure.
Fig. 1 is a schematic structural diagram of an electromagnetic wave absorbing structure according to an embodiment of the present invention. Referring to fig. 1, the electromagnetic wave absorbing structure specifically includes:
the impedance layer 20 comprises an impedance type frequency selection surface 22, the impedance type frequency selection surface 22 comprises at least one conducting ring, and a plurality of resistors are uniformly distributed in any conducting ring.
In one embodiment, the conductive ring is a regular hexagonal conductive ring, 12 resistors are uniformly arranged on the regular hexagonal conductive ring, the resistors are located at the center of the ring edge of the conductive ring, and the distances between adjacent resistors are the same.
More specifically, referring to fig. 1, the resistive layer 20 further includes: an impedance matching dielectric layer 21, the impedance matching dielectric layer 21 is located between the surface dielectric array layer 10 and the impedance type frequency selective surface 22, and is used for isolating the surface dielectric array layer 10 and the impedance type frequency selective surface 22.
Wherein, the relative dielectric constant range corresponding to the material of the impedance matching dielectric layer 21 is 1.01-1.08, and the thickness range of the impedance matching dielectric layer is 2.9-3.3 mm.
In other embodiments of the present application, the resistive layer 20 further includes: an impedance type frequency selective surface substrate 23, wherein the impedance type frequency selective surface substrate 23 is positioned at the bottom of the impedance type frequency selective surface 22 and is used for supporting the impedance type frequency selective surface 22.
Specifically, the impedance type frequency selective surface substrate is one or more of a PI film, a PEN film, an FR4 board and an F4B board, and the thickness of the impedance type frequency selective surface substrate ranges from 0.02 mm to 0.5mm. When the impedance type frequency selective surface substrate is an FR4 board, the thickness range of the substrate of the FR4 board is 0.1-0.4 mm, wherein the relative dielectric constant range of the FR4 board is 4.2-4.5, and the loss tangent angle is 0.0025. In one embodiment of the present application, the impedance-type frequency selective surface substrate is an FR4 board having a relative dielectric constant of 4.3 and a loss tangent of 0.0025, which corresponds to a thickness of 0.3mm.
Fig. 2 is a schematic structural diagram corresponding to an electromagnetic wave absorbing structure in an embodiment of the present invention. Fig. 3 is a schematic layout diagram of a conductive ring according to an embodiment of the present invention. Referring to fig. 2-3, the electromagnetic wave absorbing structure is a regular hexagon. The impedance type frequency selective surface 22 of the electromagnetic wave absorbing structure comprises a regular hexagonal conductive ring 221, and a plurality of resistors 2211 are uniformly distributed in any regular hexagonal conductive ring 221. The overall shape of the structural schematic diagram of the regular hexagonal conductive ring 221 is regular hexagon, and the regular hexagonal conductive ring 221 is formed by preparing on an impedance type frequency selective surface substrate through a magnetron sputtering method, 12 resistors are uniformly arranged on the regular hexagonal conductive ring 221, the resistors are located at the center position and the vertex position of the annular edge of the regular hexagonal conductive ring, and the distances between the adjacent resistors are the same.
In one embodiment, the regular hexagonal conductive rings in the electromagnetic wave absorbing structure are distributed in sequence, the period in the X-axis direction is 13.73mm, the period in the Y-axis direction is 7.93mm, and the Grid angle (Grid angle) of the adjacent regular hexagonal conductive rings is 30 degrees.
An alternative implementation of generating a regular hexagonal conductive ring at the impedance-type frequency selective surface may be: and generating a corresponding regular hexagonal conductive ring on the impedance type frequency selective surface substrate through spray printing, electrochemical corrosion or magnetron sputtering, wherein the material of the regular hexagonal conductive ring is one or more of gold, silver and copper. In one embodiment, a metallic copper material may be deposited on the resistive frequency selective surface substrate, thereby creating a regular hexagonal conductive ring of metallic copper material.
The length of the edge of the regular hexagon conductive ring ranges from 3.9 mm to 4.1mm, the width of the edge of the regular hexagon conductive ring ranges from 0.9 mm to 1.1mm, the distance between two adjacent regular hexagon conductive rings ranges from 0.6 mm to 1.0mm, the gap range for loading resistors on the regular hexagon conductive rings ranges from 0.1 mm to 1.0mm, and the resistance value range of the resistors ranges from 75 omega to 85 omega. In an alternative embodiment, the length of the edge of the regular hexagonal conductive ring is 4.0mm, the width of the edge of the regular hexagonal conductive ring is 1.0mm, the distance between two adjacent regular hexagonal conductive rings is 0.8mm, and the gap for loading the resistor on the regular hexagonal conductive ring is 0.8mm.
Further, the resistor in the regular hexagonal conductive ring includes: lumped chip resistor elements or equivalent resistors prepared by one or more methods of magnetron sputtering, screen printing and jet printing. That is, in the embodiment of the present invention, a lumped chip resistor element may be loaded as a resistor at a middle position or a vertex position on each side of the regular hexagonal conductive ring, where the resistance value of the resistor is 81 Ω; the regular hexagonal conductive ring and the resistor are both located on the impedance-type frequency selective surface.
The dielectric layer 30 has a relative dielectric constant in the range of 1.01-1.08 and a thickness in the range of 2.9-3.3 mm. Alternatively, the dielectric layer 30 may be PMI foam having a relative dielectric constant of 1.05, and the thickness of the dielectric layer is 5.9mm.
The metal layer is made of copper, and the thickness of the metal layer is 0.035mm.
In one embodiment of the present application, the electromagnetic wave absorbing structure may be formed by a thermo-compression process based on the surface dielectric array layer 10, the impedance matching dielectric layer 21, the impedance type frequency selective surface 22, the impedance type frequency selective surface substrate 23, the dielectric layer 30, and the metal layer 40. Alternatively, the hot pressing process may be a vacuum hot pressing process, and the surface layer dielectric array layer 10, the impedance matching dielectric layer 21, the impedance type frequency selective surface 22, the impedance type frequency selective surface substrate 23, the dielectric layer 30 and the metal layer 40 are combined to form the electromagnetic wave absorbing structure through the vacuum hot pressing process.
Optionally, after the hot pressing process, the surface layer medium array material layer may be engraved by using an engraving machine to generate a surface layer medium array layer, where the surface layer medium array material layer is used to generate a surface layer medium array layer. The surface layer medium array material layer is a whole piece before being engraved by the engraving machine, and is an FR4 board with a relative dielectric constant of 4.3 and a loss tangent angle of about 0.0025, and the thickness of the surface layer medium array material layer is 1.1mm.
After carving, a medium circular ring array is obtained, the surface layer of the medium circular ring array is a medium array layer, the outer diameter of a circular ring in the medium array layer is 7.0mm, the inner diameter of the circular ring is 3.0mm, and the height of the circular ring is 1.1mm.
The electromagnetic wave-absorbing structure prepared in the embodiment is analyzed by using simulation software to determine the performance of the electromagnetic wave-absorbing structure in the embodiment of the invention.
Fig. 4 is a schematic diagram of a TE wave reflectivity change curve obtained by loading resistors with different resistance values on an impedance type frequency selective surface regular hexagonal ring unit when electromagnetic waves are perpendicularly incident in the embodiment of the present invention. As shown in fig. 5, the TE wave (electromagnetic wave) reflectivity change curve obtained by loading resistors with different resistance values on the regular hexagonal conductive ring of the impedance type frequency selective surface is shown when electromagnetic waves are perpendicularly incident. The embodiment can always realize-20 dB absorption in a broadband range within the range of 75-85 omega of input resistance, and has good stability.
Fig. 5 is a schematic diagram showing the change of reflectivity of the wave absorbing structure according to the side length of the regular hexagonal ring unit of the impedance type frequency selective surface when the TE wave is perpendicularly incident in the embodiment of the present invention. As shown in fig. 5, the reflectivity of the wave absorbing structure changes with the side length of the regular hexagonal conductive ring of the impedance type frequency selective surface when the TE wave is perpendicularly incident. The length of the edge of the regular hexagonal frequency conducting ring is 3.9-4.1 mm, and the reflectivity can be kept below-20 dB at 5.5-16.1 GHz.
Fig. 6 is a schematic diagram of a curve of the reflectivity of the wave-absorbing structure according to the width of six sides of the regular hexagonal ring unit of the impedance-type frequency selective surface when the TE wave is perpendicularly incident in the embodiment of the present invention. As shown in fig. 6, when the TE wave is perpendicularly incident, the reflectivity of the wave absorbing structure changes along with the width of six sides of the regular hexagonal conductive ring of the impedance type frequency selective surface. The width of the circumferential edge of the frequency selective surface unit in this embodiment is in the range of 0.9-1.1 mm, and the reflectivity can be kept below-20 dB at 5.5-16.0 GHz.
Fig. 7 is a schematic diagram of a curve of the reflectivity of the wave-absorbing structure according to the regular hexagonal ring unit spacing of the impedance type frequency selective surface when the TE wave is perpendicularly incident in the embodiment of the present invention. As shown in FIG. 7, when TE waves are perpendicularly incident, the reflectivity of the wave absorbing structure changes along with the interval of the regular hexagonal conducting rings of the impedance type frequency selective surface. The frequency selective surface adjacent unit spacing of the embodiment is in the range of 0.6-1.0 mm, and can keep the absorption of-20 dB in the wide band range.
Fig. 8 is a schematic diagram of a curve of reflectivity of a wave absorbing structure according to thickness variation of a surface medium array unit when a TE wave is perpendicularly incident in an embodiment of the present invention. As shown in FIG. 8, when TE waves are perpendicularly incident, the reflectivity of the wave absorbing structure changes along with the thickness of the surface medium array unit. The embodiment can always realize-20 dB absorption in a broadband range within the range of 0.9-1.3 mm of the thickness of the surface medium array unit.
Fig. 4 to fig. 8 show that the impedance type frequency selective surface of the electromagnetic wave absorbing structure provided by the embodiment includes a conductive ring, when an electromagnetic wave is incident on the electromagnetic wave absorbing structure, the conductive ring in the impedance type frequency selective surface generates a surface induced current, so that the electromagnetic energy is converted into heat to realize energy loss, the stability of the incident angle of the electromagnetic wave incident on the electromagnetic wave absorbing structure is enhanced, and the wave absorbing performance of the electromagnetic wave absorbing structure can be improved.
Furthermore, the surface layer medium array layer in the embodiment of the invention performs impedance compensation on the whole structure of the electromagnetic wave absorbing structure in the electromagnetic wave incident state, so that wider wave absorbing bandwidth in the oblique incident state is realized, and excellent wave absorbing performance is maintained.
In addition, the electromagnetic wave absorbing structure has the characteristic of insensitivity of structural parameters, has high tolerance, and is favorable for actual production and manufacture.
FIG. 9 is a diagram showing the frequency dependence of TE wave reflectivity corresponding to different incident angles according to an embodiment of the present invention. Fig. 10 is a schematic diagram of a plot of TE wave absorption corresponding to different incident angles with frequency according to an embodiment of the present invention. Referring to fig. 9 to 10, the wave absorbing structure of the present invention has a frequency band of 4.36 to 18.09GHz having a reflectivity lower than-10 dB when electromagnetic waves are perpendicular; the frequency band with reflectivity below-20 dB is 5.32-16.46GHz. When the incident angle of electromagnetic wave is 30 degrees, the frequency band with the reflectivity lower than-10 dB is 4.43-20.46GHz; the frequency band with reflectivity lower than-20 dB is 5.42-19.04GHz. When the incident angle of electromagnetic wave is 40 degrees, the frequency band with the reflectivity lower than-10 dB is 4.51-22.43GHz; the frequency band with reflectivity lower than-15 dB is 5.14-21.64GHz. The frequency band with reflectivity lower than-10 dB is 4.73-23.59GHz when the incident angle of electromagnetic wave is 50 degrees. The band with reflectivity lower than-10 dB is 5.48-18.00GHz when the incident angle of electromagnetic wave is 60 degrees.
Therefore, the electromagnetic wave absorbing structure in the embodiment of the invention has extremely strong oblique incidence stability and wave absorbing performance in an ultra-wideband range (for example, -20 dB).
Further, fig. 11 is a schematic diagram of a frequency-dependent graph of TM wave reflectivity corresponding to different incident angles in an embodiment of the present invention. Fig. 12 is a schematic diagram of a frequency-dependent graph of TM wave absorption corresponding to different incident angles in an embodiment of the present invention. Referring to fig. 11-12, the wave absorbing structure of the present invention has a frequency band of 4.36-18.09GHz with a reflectivity lower than-10 dB when electromagnetic waves are perpendicular; the frequency band with reflectivity below-20 dB is 5.32-16.46GHz. When the incident angle of electromagnetic wave is 20 degrees, the frequency band with the reflectivity lower than-10 dB is 4.69-18.84GHz; the band with reflectivity below-20 dB is 5.85-17.01GHz. When the incident angle of electromagnetic wave is 40 deg., the frequency band with reflectivity lower than-10 dB is 6.09-20.61GHz.
Based on the above, the electromagnetic wave absorbing structure in the embodiment of the invention has the following advantages:
firstly, a surface dielectric array layer in the electromagnetic wave-absorbing structure is arranged above a resistance layer, the resistance layer can be covered by the surface dielectric array layer, and the service life of the resistance layer is greatly prolonged; furthermore, the circular ring (shown in fig. 2) on the surface dielectric array layer can be matched and compensated with oblique incidence impedance, so that the incidence angle stability of the electromagnetic wave absorbing structure is greatly improved.
Furthermore, according to the embodiment of the invention, the surface layer medium array layer and the impedance matching medium layer in the impedance layer are cooperatively designed to optimize impedance matching, so that more electromagnetic waves enter the electromagnetic wave absorbing structure, the wave absorbing bandwidth is widened, and the wave absorbing performance is further improved.
In addition, the impedance type frequency selective surface in the embodiment of the invention has wide bandwidth electromagnetic energy absorption and good impedance matching, and therefore, when the impedance type frequency selective surface generates a conductive ring, the broadband high-performance absorption can be realized based on the conductive ring.
The impedance type frequency selective surface substrate is made of a lossy dielectric material, and is beneficial to improving the wave absorbing performance under a certain thickness; meanwhile, a hole is arranged in the center of the layer, and the optimization of the substrate wave transmittance caused by the hole plays a role in promoting further resonance loss.
Furthermore, the embodiment of the invention also discloses a dielectric layer, the thickness of the dielectric layer determines the frequency point of resonance loss, and the material and the thickness of the dielectric layer in the invention can be matched with the impedance type frequency selection surface, so that the broadband high-performance absorption is further improved.
Finally, the metal layer in the embodiment of the invention is used as an electromagnetic wave reflecting plate, and can reflect electromagnetic waves, so that further resonance loss is realized on the impedance type frequency selective surface layer and the surface layer medium array layer. In addition, the electromagnetic wave absorbing structure in the embodiment of the invention has wide application prospect in the fields of microwave stealth technology, antennas, electromagnetic compatibility and the like.
Based on the above, the electromagnetic wave absorbing structure in the embodiment of the invention is superior to the existing design, and when the electromagnetic wave is vertical, the frequency band with the reflectivity lower than-10 dB is 4.36-18.09GHz; the frequency band with reflectivity below-20 dB is 5.32-16.46GHz. When the incident angle of electromagnetic wave is 30 degrees, the frequency band with the reflectivity lower than-10 dB is 4.43-20.46GHz; the frequency band with reflectivity lower than-20 dB is 5.42-19.04GHz. When the incident angle of electromagnetic wave is 40 degrees, the frequency band with the reflectivity lower than-10 dB is 4.51-22.43GHz; the frequency band with reflectivity lower than-15 dB is 5.14-21.64GHz. The frequency band with reflectivity lower than-10 dB is 4.73-23.59GHz when the incident angle of electromagnetic wave is 50 degrees. The band with reflectivity lower than-10 dB is 5.48-18.00GHz when the incident angle of electromagnetic wave is 60 degrees. Has extremely strong oblique incidence stability and-20 dB wave absorbing performance in an ultra-wideband range. Furthermore, the wave absorbing structure provided by the invention can meet the outdoor application scene to a certain extent.
The foregoing describes several embodiments of the present invention, and the various alternatives presented by the various embodiments may be combined, cross-referenced, with each other without conflict, extending beyond what is possible embodiments, all of which are considered to be embodiments of the present invention disclosed and disclosed.
Although the embodiments of the present invention are disclosed above, the present invention is not limited thereto. Various changes and modifications may be made by one skilled in the art without departing from the spirit and scope of the invention, and the scope of the invention should be assessed accordingly to that of the appended claims.
Claims (7)
1. An electromagnetic wave absorbing structure, comprising:
the impedance layer comprises an impedance type frequency selection surface, wherein the impedance type frequency selection surface comprises at least one conducting ring, a plurality of resistors are uniformly distributed in any conducting ring,
the resistive layer further comprises:
the impedance matching medium layer is positioned between the surface layer medium array layer and the impedance type frequency selection surface and is used for isolating the surface layer medium array layer and the impedance type frequency selection surface;
the conducting rings are regular hexagon conducting rings, 12 resistors are uniformly arranged on the regular hexagon conducting rings, the resistors are located at the center position and the top position of the annular edge of each conducting ring, the distances between adjacent resistors are the same, the annular edge length range of each regular hexagon conducting ring is 3.9-4.1 mm, the annular edge width range of each regular hexagon conducting ring is 0.9-1.1 mm, the interval range between two adjacent regular hexagon conducting rings is 0.6-1.0 mm, the gap range for loading the resistors on each regular hexagon conducting ring is 0.1-1.0 mm, and the resistance value range of each resistor is 75-85 omega.
2. The electromagnetic wave absorbing structure of claim 1, wherein the resistive layer further comprises:
and the impedance type frequency selection surface substrate is positioned at the bottom of the impedance type frequency selection surface and is used for supporting the impedance type frequency selection surface.
3. The electromagnetic wave absorbing structure according to claim 1, wherein the regular hexagonal conductive ring is obtained by spray printing, electrochemical corrosion or magnetron sputtering, and the material of the regular hexagonal conductive ring is one of gold, silver and copper; the resistance in the regular hexagonal conductive ring comprises: lumped chip resistor elements or equivalent resistors prepared by one or more methods of magnetron sputtering, screen printing and jet printing.
4. The electromagnetic wave absorbing structure of claim 2, wherein the impedance type frequency selective surface substrate is one or more of PI film, PEN film, FR4 board, F4B board, and has a substrate thickness in a range of 0.02-0.5 mm.
5. The electromagnetic wave absorbing structure of claim 4, wherein the impedance type frequency selective surface substrate is an FR4 board and the FR4 board has a substrate thickness in the range of 0.1-0.4 mm, wherein the FR4 board has a relative permittivity in the range of 4.2-4.5 and a loss tangent angle of 0.0025.
6. The electromagnetic wave absorbing structure according to claim 1, wherein the dielectric layer has a relative dielectric constant in a range of 1.01-1.08 and a thickness in a range of 2.9-3.3 mm; the impedance matching dielectric layer in the impedance layer and the dielectric layer are the same in material and thickness; the metal layer is made of copper.
7. The electromagnetic wave absorbing structure according to claim 2, wherein the electromagnetic wave absorbing structure is formed by a thermo-compression process of a surface layer dielectric array layer, an impedance matching dielectric layer, an impedance type frequency selective surface substrate, a dielectric layer and a metal layer, the surface layer dielectric array layer of the electromagnetic wave absorbing structure is formed by engraving the surface layer array material layer after the thermo-compression process by an engraving machine, and the surface layer array material layer is used for generating the surface layer dielectric array layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211287480.5A CN115473051B (en) | 2022-10-20 | 2022-10-20 | Electromagnetic wave absorbing structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211287480.5A CN115473051B (en) | 2022-10-20 | 2022-10-20 | Electromagnetic wave absorbing structure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN115473051A CN115473051A (en) | 2022-12-13 |
| CN115473051B true CN115473051B (en) | 2023-07-18 |
Family
ID=84337077
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202211287480.5A Active CN115473051B (en) | 2022-10-20 | 2022-10-20 | Electromagnetic wave absorbing structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN115473051B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116207516B (en) * | 2023-04-11 | 2024-08-09 | 中南大学 | High-performance metamaterial wave absorber based on three-layer super surface |
| CN116864994B (en) * | 2023-08-04 | 2024-01-16 | 中南大学 | Double-impedance-layer high-performance wave-absorbing structure |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102291970A (en) * | 2011-05-06 | 2011-12-21 | 东南大学 | Single frequency band microwave absorber and multiple frequency band microwave absorber |
| CN104553221A (en) * | 2015-01-20 | 2015-04-29 | 浙江大学 | High-performance spectral selectivity wave-absorbing element and solar heat photovoltaic system |
| CN106207486A (en) * | 2016-07-13 | 2016-12-07 | 李寅辉 | A kind of Graphene prints absorbing material and preparation method thereof |
| CN107302139A (en) * | 2017-06-19 | 2017-10-27 | 中南大学 | A kind of dielectric structure type multiband radar absorbing material based on advanced low-k materials |
| CN108400447A (en) * | 2018-02-07 | 2018-08-14 | 中南大学 | A kind of three-dimensional multiband radar absorbing material |
| CN114204279A (en) * | 2021-12-14 | 2022-03-18 | 中南大学 | Resistance loading quad ring ultra wide band absorbing structure |
| CN114336086A (en) * | 2022-01-06 | 2022-04-12 | 中南大学 | Ultra-wideband wave absorbing structure for reducing RCS (radar cross section) of antenna |
-
2022
- 2022-10-20 CN CN202211287480.5A patent/CN115473051B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102291970A (en) * | 2011-05-06 | 2011-12-21 | 东南大学 | Single frequency band microwave absorber and multiple frequency band microwave absorber |
| CN104553221A (en) * | 2015-01-20 | 2015-04-29 | 浙江大学 | High-performance spectral selectivity wave-absorbing element and solar heat photovoltaic system |
| CN106207486A (en) * | 2016-07-13 | 2016-12-07 | 李寅辉 | A kind of Graphene prints absorbing material and preparation method thereof |
| CN107302139A (en) * | 2017-06-19 | 2017-10-27 | 中南大学 | A kind of dielectric structure type multiband radar absorbing material based on advanced low-k materials |
| CN108400447A (en) * | 2018-02-07 | 2018-08-14 | 中南大学 | A kind of three-dimensional multiband radar absorbing material |
| CN114204279A (en) * | 2021-12-14 | 2022-03-18 | 中南大学 | Resistance loading quad ring ultra wide band absorbing structure |
| CN114336086A (en) * | 2022-01-06 | 2022-04-12 | 中南大学 | Ultra-wideband wave absorbing structure for reducing RCS (radar cross section) of antenna |
Also Published As
| Publication number | Publication date |
|---|---|
| CN115473051A (en) | 2022-12-13 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN115473051B (en) | Electromagnetic wave absorbing structure | |
| CN108270085B (en) | Suction-through integrated frequency selective surface structure | |
| CN110504549B (en) | Graphene-based absorption-transmission integrated frequency selection surface | |
| CN107508017B (en) | Band-suction type broadband frequency selection structure and application thereof | |
| CN110416735A (en) | Flexible multi-layered frequency-selective surfaces with transmission zero | |
| CN114597672B (en) | Ultra-wideband wave absorbing structure based on multilayer resistance type FSS and preparation method | |
| CN114361806B (en) | Miniaturized integrated frequency selective surface that absorbs thoroughly | |
| CN104681981A (en) | Integrated short backfire antenna of millimeter wave dielectrics | |
| CN113054439B (en) | Curved surface conformal frequency selection surface cover, design method and application | |
| CN114336086A (en) | Ultra-wideband wave absorbing structure for reducing RCS (radar cross section) of antenna | |
| CN114725688A (en) | Wave-absorbing wave-transmitting integrated wave absorber | |
| CN114221139A (en) | Band gap type wave absorbing plate with wide reflection band | |
| CN114204279A (en) | Resistance loading quad ring ultra wide band absorbing structure | |
| CN110829036B (en) | Ultra-thin ultra-wideband electromagnetic wave absorber | |
| CN114142246B (en) | Broadband wide-angle metamaterial wave absorber based on gradual change impedance and preparation method | |
| CN113314850B (en) | 2.5D multilayer frequency selective surface | |
| CN116207516B (en) | High-performance metamaterial wave absorber based on three-layer super surface | |
| CN1937307B (en) | High performance frequency selective surface based on integrated waveguide multi-cavity cascade | |
| CN114122743B (en) | Wave absorbing/transmitting device with miniaturized units | |
| CN115296040A (en) | Resistance loading regular hexagonal ring ultra wide band wave absorbing structure | |
| CN113131223B (en) | Electromagnetic wave absorber with dual polarization and double absorption bands | |
| CN113394570A (en) | Low-profile low-incidence-angle-sensitivity wave-absorbing surface and manufacturing process thereof | |
| CN214280217U (en) | Wave-absorbing metamaterial | |
| CN112003012B (en) | Gain-enhanced low-radar scattering cross section air-feed array antenna | |
| CN116864994B (en) | Double-impedance-layer high-performance wave-absorbing structure |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |