CN115473051B - Electromagnetic wave absorbing structure - Google Patents
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- 239000010410 layer Substances 0.000 claims description 109
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- 238000000034 method Methods 0.000 claims description 11
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 8
- 229910052802 copper Inorganic materials 0.000 claims description 8
- 239000010949 copper Substances 0.000 claims description 8
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q17/00—Devices for absorbing waves radiated from an antenna; Combinations of such devices with active antenna elements or systems
- H01Q17/008—Devices for absorbing waves radiated from an antenna; Combinations of such devices with active antenna elements or systems with a particular shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
- H01Q15/0006—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
- H01Q15/0013—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K9/00—Screening of apparatus or components against electric or magnetic fields
- H05K9/0073—Shielding materials
- H05K9/0081—Electromagnetic shielding materials, e.g. EMI, RFI shielding
- H05K9/0088—Electromagnetic shielding materials, e.g. EMI, RFI shielding comprising a plurality of shielding layers; combining different shielding material structure
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Abstract
Description
技术领域technical field
本发明涉及电磁吸波技术领域，尤其涉及一种电磁吸波结构。The invention relates to the technical field of electromagnetic wave absorption, in particular to an electromagnetic wave absorbing structure.
背景技术Background technique
电磁(EM)吸波结构被广泛的应用与卫星导航系统、电磁兼容、隐身领域等。Electromagnetic (EM) absorbing structures are widely used in satellite navigation systems, electromagnetic compatibility, and stealth fields.
目前的电磁吸波结构中，电磁波入射时吸波结构的吸波性能较差，例如，在目前的电磁吸波结构，当有电磁波斜入射电磁吸波结构时，电磁波的入射角稳定性较差，为此，亟须一种新型的电磁吸波结构以改善电磁吸波结构的入射角稳定性，从而提升电磁波入射时吸波结构的吸波性能。In the current electromagnetic wave-absorbing structure, the wave-absorbing performance of the wave-absorbing structure is poor when the electromagnetic wave is incident. Therefore, a new type of electromagnetic absorbing structure is urgently needed to improve the stability of the incident angle of the electromagnetic absorbing structure, thereby improving the absorbing performance of the absorbing structure when electromagnetic waves are incident.
发明内容Contents of the invention
本发明的目的在于提供一种电磁吸波结构，能够提升电磁波入射时的吸波性能。The object of the present invention is to provide an electromagnetic absorbing structure, which can improve the absorbing performance when electromagnetic waves are incident.
为实现上述目的，第一方面，本发明提供了一种电磁吸波结构，包括：In order to achieve the above object, in the first aspect, the present invention provides an electromagnetic absorbing structure, including:
由上至下的表层介质阵列层、阻抗层、介质层和金属层，其中，所述阻抗层中包括阻抗型频率选择表面，所述阻抗型频率选择表面中包括至少一个导电环，任一导电环中均匀分布有多个电阻。Surface dielectric array layer, impedance layer, dielectric layer and metal layer from top to bottom, wherein, the impedance layer includes an impedance type frequency selective surface, and the impedance type frequency selective surface includes at least one conductive ring, any conductive There are multiple resistors evenly distributed in the ring.
可选的，所述阻抗层还包括：Optionally, the impedance layer also includes:
阻抗匹配介质层，所述阻抗匹配介质层位于所述表层介质阵列层与所述阻抗型频率选择表面之间，用于隔离表层介质阵列层和所述阻抗型频率选择表面。An impedance matching medium layer, the impedance matching medium layer is located between the surface dielectric array layer and the impedance type frequency selective surface, and is used for isolating the surface layer dielectric array layer and the impedance type frequency selective surface.
可选的，所述阻抗层还包括：Optionally, the impedance layer also includes:
阻抗型频率选择表面衬底，所述阻抗型频率选择表面衬底位于所述阻抗型频率选择表面底部，用于承托所述阻抗型频率选择表面。An impedance-type frequency selective surface substrate, the impedance-type frequency-selective surface substrate is located at the bottom of the impedance-type frequency-selective surface, and is used to support the impedance-type frequency-selective surface.
可选的，所述导电环为正六边形导电环，所述正六边形导电环上均匀设置有12个电阻，所述电阻位于导电环的环边的中心位置和顶点位置，且相邻电阻之间的距离相同。Optionally, the conductive ring is a regular hexagonal conductive ring, and 12 resistors are uniformly arranged on the regular hexagonal conductive ring, and the resistors are located at the center and apex positions of the ring edges of the conductive ring, and adjacent resistors The distance between them is the same.
可选的，所述正六边形导电环的环边边长范围为3.9～4.1mm，所述正六边形导电环的环边宽度范围为0.9～1.1mm，两个相邻正六边形导电环之间的间距范围为0.6～1.0mm，所述正六边形导电环上用于加载电阻的缝隙范围为0.1～1.0mm，所述电阻的阻值范围为75～85Ω。Optionally, the ring side length of the regular hexagonal conductive ring ranges from 3.9 to 4.1 mm, the ring side width range of the regular hexagonal conductive ring is 0.9 to 1.1 mm, and two adjacent regular hexagonal conductive rings The distance between them is in the range of 0.6-1.0mm, the gap on the regular hexagonal conductive ring for loading the resistor is in the range of 0.1-1.0mm, and the resistance value of the resistor is in the range of 75-85Ω.
可选的，所述正六边形导电环通过喷印、电化学腐蚀或磁控溅射得到，所述正六边形导电环的材料为金、银、铜中的一种；所述正六边形导电环中的电阻包括：集总贴片电阻元件或者磁控溅射、丝网印刷、喷印中的一种或多种方法制备得到的等效电阻中的一种或者多种。Optionally, the regular hexagonal conductive ring is obtained by spray printing, electrochemical corrosion or magnetron sputtering, and the material of the regular hexagonal conductive ring is one of gold, silver and copper; the regular hexagonal The resistance in the conductive ring includes: one or more of lumped chip resistance elements or equivalent resistance prepared by one or more methods of magnetron sputtering, screen printing and jet printing.
可选的，所述阻抗型频率选择表面衬底为PI膜、PEN膜、FR4板、F4B板中的一种或者多种，所述阻抗型频率选择表面衬底的衬底厚度范围为0.02～0.5mm。Optionally, the impedance-type frequency-selective surface substrate is one or more of PI film, PEN film, FR4 board, and F4B board, and the substrate thickness of the impedance-type frequency-selective surface substrate ranges from 0.02 to 0.5mm.
可选的，所述阻抗型频率选择表面衬底为FR4板，且所述FR4板的衬底厚度范围为0.1～0.4mm，其中，所述FR4板的相对介电常数范围为4.2-4.5，且损耗正切角为0.0025。Optionally, the impedance-type frequency selective surface substrate is an FR4 board, and the substrate thickness of the FR4 board is in the range of 0.1-0.4 mm, wherein the relative permittivity of the FR4 board is in the range of 4.2-4.5, And the loss tangent angle is 0.0025.
可选的，所述介质层的材料对应的相对介电常数范围为1.01～1.08，所述介质层的厚度范围为2.9～3.3mm；所述阻抗层中的阻抗匹配介质层与所述介质层的材料和厚度均相同；所述金属层的材料为铜。Optionally, the material of the dielectric layer corresponds to a relative permittivity in the range of 1.01 to 1.08, and the thickness of the dielectric layer is in the range of 2.9 to 3.3 mm; the impedance matching dielectric layer in the impedance layer and the dielectric layer The material and thickness of the metal layer are the same; the material of the metal layer is copper.
可选的，所述电磁吸波结构通过对表层介质阵列层、阻抗匹配介质层、阻抗型频率选择表面、阻抗型频率选择表面衬底、介质层和金属层热压工艺形成，所述电磁吸波结构的表层介质阵列层是在热压工艺之后，对表层阵列材料层采用雕刻机进行雕刻生成，所述表层阵列材料层用于生成表层介质阵列层。Optionally, the electromagnetic absorbing structure is formed by hot-pressing the surface dielectric array layer, impedance matching dielectric layer, impedance-type frequency selective surface, impedance-type frequency selective surface substrate, dielectric layer, and metal layer. The surface dielectric array layer of the wave structure is formed by engraving the surface array material layer with an engraving machine after the hot pressing process, and the surface array material layer is used to generate the surface dielectric array layer.
基于以上，本发明提供了一种电磁吸波结构，包括：由上至下的表层介质阵列层、阻抗层、介质层和金属层，其中，所述阻抗层中包括阻抗型频率选择表面，所述阻抗型频率选择表面中包括至少一个导电环，任一导电环中均匀分布有多个电阻。可见，本发明实施例中的电磁吸波结构的阻抗型频率选择表面中包括导电环，当电磁波入射所述电磁吸波结构时，所述阻抗型频率选择表面中导电环产生表面感应电流，将电磁能量转变为热量的形式实现能量损耗，增强了电磁波入射所述电磁吸波结构的入射角稳定性，可见，本发明实施例能够提升电磁波入射时吸波结构的吸波性能。Based on the above, the present invention provides an electromagnetic absorbing structure, including: a surface dielectric array layer, an impedance layer, a dielectric layer and a metal layer from top to bottom, wherein the impedance layer includes an impedance-type frequency selective surface, so The impedance-type frequency selective surface includes at least one conductive ring, and a plurality of resistors are evenly distributed in any conductive ring. It can be seen that the impedance-type frequency-selective surface of the electromagnetic wave-absorbing structure in the embodiment of the present invention includes a conductive ring. When electromagnetic waves are incident on the electromagnetic wave-absorbing structure, the conductive ring in the impedance-type frequency-selective surface generates a surface induced current, and the Electromagnetic energy is converted into heat to realize energy loss, which enhances the stability of the incident angle of the electromagnetic wave-absorbing structure when electromagnetic waves are incident. It can be seen that the embodiments of the present invention can improve the wave-absorbing performance of the wave-absorbing structure when electromagnetic waves are incident.
进一步的，本发明实施例中的表层介质阵列层能够在电磁波入射状态下，对电磁吸波结构整体结构进行阻抗补偿，实现了斜入射状态下更宽的吸波带宽，保持了极佳的吸波性能。Furthermore, the surface dielectric array layer in the embodiment of the present invention can perform impedance compensation on the overall structure of the electromagnetic absorbing structure under the incident state of electromagnetic waves, realize a wider absorbing bandwidth under the state of oblique incidence, and maintain excellent absorbing wave performance.
附图说明Description of drawings
为了更清楚地说明本发明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。In order to more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the following will briefly introduce the drawings that need to be used in the description of the embodiments or the prior art. Obviously, the accompanying drawings in the following description are only These are some embodiments of the present invention. Those skilled in the art can also obtain other drawings based on these drawings without creative work.
图1为本发明实施例中提供的一种电磁吸波结构的结构示意图；Fig. 1 is a structural schematic diagram of an electromagnetic absorbing structure provided in an embodiment of the present invention;
图2为本发明实施例中电磁吸波结构对应的又一种结构示意图；Fig. 2 is another structural schematic diagram corresponding to the electromagnetic absorbing structure in the embodiment of the present invention;
图3为本发明实施例中导电环的排布示意图；3 is a schematic diagram of the arrangement of conductive rings in an embodiment of the present invention;
图4为本发明实施例中电磁波垂直入射时，阻抗型频率选择表面正六边形环单元加载不同阻值的电阻所得到的TE波反射率变化曲线的示意图；Fig. 4 is a schematic diagram of the change curve of TE wave reflectivity obtained by loading resistors with different resistance values on the regular hexagonal ring unit of the impedance type frequency selective surface when the electromagnetic wave is vertically incident in the embodiment of the present invention;
图5为本发明实施例中在TE波垂直入射时，吸波结构的反射率随阻抗型频率选择表面的正六边形环单元边长变化的示意图；Fig. 5 is a schematic diagram of the change of the reflectivity of the wave-absorbing structure with the side length of the regular hexagonal ring unit of the impedance-type frequency selective surface when the TE wave is vertically incident in the embodiment of the present invention;
图6为本发明实施例中在TE波垂直入射时，吸波结构的反射率随阻抗型频率选择表面的正六边形环单元六个边的宽度变化的曲线的示意图；Fig. 6 is a schematic diagram of the curve of the reflectivity of the absorbing structure changing with the width of the six sides of the regular hexagonal ring unit of the impedance-type frequency selective surface when the TE wave is vertically incident in the embodiment of the present invention;
图7为本发明实施例中在TE波垂直入射时，吸波结构的反射率随阻抗型频率选择表面的正六边形环单元间距变化的曲线的示意图；Fig. 7 is a schematic diagram of the curve of the change of the reflectivity of the wave-absorbing structure with the distance between the regular hexagonal ring units of the impedance-type frequency selective surface when the TE wave is vertically incident in the embodiment of the present invention;
图8为本发明实施例中在TE波垂直入射时，吸波结构的反射率随表面介质阵列单元厚度变化的曲线的示意图；Fig. 8 is a schematic diagram of the curve of the reflectivity of the absorbing structure changing with the thickness of the surface dielectric array unit when the TE wave is vertically incident in the embodiment of the present invention;
图9为本发明实施例中不同入射角对应TE波反射率随频率变化图的示意图；Fig. 9 is a schematic diagram of the TE wave reflectivity versus frequency variation diagram corresponding to different incident angles in the embodiment of the present invention;
图10为本发明实施例中不同入射角对应TE波吸波率随频率变化图的示意图；Fig. 10 is a schematic diagram of the TE wave absorption rate versus frequency variation diagram corresponding to different incident angles in the embodiment of the present invention;
图11为本发明实施例中不同入射角对应TM波反射率随频率变化图的示意图；Fig. 11 is a schematic diagram of the variation diagram of TM wave reflectivity with frequency corresponding to different incident angles in the embodiment of the present invention;
图12为本发明实施例中不同入射角对应TM波吸波率随频率变化图的示意图。Fig. 12 is a schematic diagram of the variation of TM wave absorption rate with frequency corresponding to different incident angles in the embodiment of the present invention.
具体实施方式Detailed ways
下面详细描述本发明的实施例，所述实施例的示例在附图中示出，其中自始至终相同或类似的标号表示相同或类似的元件或具有相同或类似功能的元件。下面通过参考附图描述的实施例是示例性的，旨在用于解释本发明，而不能理解为对本发明的限制。Embodiments of the present invention are described in detail below, examples of which are shown in the drawings, wherein the same or similar reference numerals designate the same or similar elements or elements having the same or similar functions throughout. The embodiments described below by referring to the figures are exemplary and are intended to explain the present invention and should not be construed as limiting the present invention.
电磁吸波结构是Jaumann吸波结构与金属频率选择表面结合而得到一种高性能吸波结构。相较于Jaumann结构中的全电阻膜阻抗层，电磁吸波结构中的阻抗型频率选择表面通过引入等效电容和等效电感实现了多重共振，同时多层技术可以克服窄带和厚度过厚的限制，极大地拓宽了吸波结构的应用前景。The electromagnetic absorbing structure is a high-performance absorbing structure obtained by combining the Jaumann absorbing structure with the metal frequency selective surface. Compared with the full-resistance film impedance layer in the Jaumann structure, the impedance-type frequency-selective surface in the electromagnetic absorbing structure achieves multiple resonances by introducing equivalent capacitance and equivalent inductance. Limits greatly broaden the application prospects of absorbing structures.
图1为本发明实施例中提供的一种电磁吸波结构的结构示意图。参考图1所示，所述电磁吸波结构具体包括：Fig. 1 is a schematic structural diagram of an electromagnetic absorbing structure provided in an embodiment of the present invention. Referring to Figure 1, the electromagnetic absorbing structure specifically includes:
由上至下的表层介质阵列层10、阻抗层20、介质层30和金属层40，其中，所述阻抗层20中包括阻抗型频率选择表面22，所述阻抗型频率选择表面22中包括至少一个导电环，任一导电环中均匀分布有多个电阻。Surface dielectric array layer 10, impedance layer 20, dielectric layer 30 and metal layer 40 from top to bottom, wherein, the impedance layer 20 includes an impedance type frequency selective surface 22, and the impedance type frequency selective surface 22 includes at least A conductive ring, and a plurality of resistors are evenly distributed in any conductive ring.
在一种实施例中，所述导电环为正六边形导电环，所述正六边形导电环上均匀设置有12个电阻，所述电阻位于导电环的环边的中心位置，且相邻电阻之间的距离相同。In one embodiment, the conductive ring is a regular hexagonal conductive ring, 12 resistors are uniformly arranged on the regular hexagonal conductive ring, the resistors are located at the center of the ring edge of the conductive ring, and adjacent resistors The distance between them is the same.
更为具体的，参考图1所示，所述阻抗层20还包括：阻抗匹配介质层21，所述阻抗匹配介质层21位于所述表层介质阵列层10与所述阻抗型频率选择表面22之间，用于隔离表层介质阵列层10和所述阻抗型频率选择表面22。More specifically, as shown in FIG. 1 , the impedance layer 20 further includes: an impedance matching dielectric layer 21, and the impedance matching dielectric layer 21 is located between the surface dielectric array layer 10 and the impedance type frequency selective surface 22. The space is used to isolate the surface dielectric array layer 10 from the impedance type frequency selective surface 22 .
其中，所述阻抗匹配介质层21的材料对应的相对介电常数范围为1.01～1.08，所述阻抗匹配介质层的厚度范围为2.9～3.3mm。Wherein, the material of the impedance matching medium layer 21 corresponds to a relative permittivity ranging from 1.01 to 1.08, and the thickness of the impedance matching medium layer ranges from 2.9 to 3.3 mm.
在本申请其他实施例中，所述阻抗层20还包括：阻抗型频率选择表面衬底23，所述阻抗型频率选择表面衬底23位于所述阻抗型频率选择表面22底部，用于承托所述阻抗型频率选择表面22。In other embodiments of the present application, the impedance layer 20 further includes: an impedance type frequency selective surface substrate 23, and the impedance type frequency selective surface substrate 23 is located at the bottom of the impedance type frequency selective surface 22 for supporting The impedance-type frequency selective surface 22 .
具体的，所述阻抗型频率选择表面衬底为PI膜、PEN膜、FR4板、F4B板中的一种或者多种，所述阻抗型频率选择表面衬底的衬底厚度范围为0.02～0.5mm。当阻抗型频率选择表面衬底为FR4板时，所述FR4板的衬底厚度范围为0.1～0.4mm，其中，所述FR4板的相对介电常数范围为4.2-4.5，且损耗正切角为0.0025。在本申请中的一种实施例中，所述阻抗型频率选择表面衬底为相对介电常数为4.3、损耗正切角为0.0025的FR4板，其对应的厚度为0.3mm。Specifically, the impedance-type frequency-selective surface substrate is one or more of PI film, PEN film, FR4 board, and F4B board, and the substrate thickness of the impedance-type frequency-selective surface substrate ranges from 0.02 to 0.5 mm. When the impedance-type frequency selective surface substrate is an FR4 plate, the substrate thickness of the FR4 plate ranges from 0.1 to 0.4 mm, wherein the relative permittivity of the FR4 plate ranges from 4.2 to 4.5, and the loss tangent angle is 0.0025. In one embodiment of the present application, the impedance-type frequency selective surface substrate is an FR4 plate with a relative permittivity of 4.3 and a loss tangent angle of 0.0025, and its corresponding thickness is 0.3 mm.
图2为本发明实施例中电磁吸波结构对应的结构示意图。图3为本发明实施例中导电环的排布示意图。参考图2-图3所示，所述电磁吸波结构整体呈现正六边形体。所述电磁吸波结构的阻抗型频率选择表面22中包括一个正六边形导电环221，任一正六边形导电环221中均匀分布有多个电阻2211。正六边形导电环221的结构示意图整体形状呈正六边形，通过在阻抗型频率选择表面衬底上通过磁控溅射的方法制备形成，所述正六边形导电环221上均匀设置有12个电阻，所述电阻位于正六边形导电环的环边的中心位置和顶点位置，且相邻电阻之间的距离相同。FIG. 2 is a structural schematic diagram corresponding to the electromagnetic absorbing structure in the embodiment of the present invention. FIG. 3 is a schematic diagram of the arrangement of the conductive rings in the embodiment of the present invention. Referring to Fig. 2-Fig. 3, the electromagnetic wave absorbing structure presents a regular hexagon as a whole. The impedance type frequency selective surface 22 of the electromagnetic absorbing structure includes a regular hexagonal conductive ring 221 , and a plurality of resistors 2211 are evenly distributed in any regular hexagonal conductive ring 221 . Schematic diagram of the structure of the regular hexagonal conductive ring 221. The overall shape is regular hexagonal. It is formed by magnetron sputtering on an impedance-type frequency selective surface substrate. The regular hexagonal conductive ring 221 is evenly arranged with 12 The resistors are located at the center and vertices of the edges of the regular hexagonal conductive ring, and the distances between adjacent resistors are the same.
在一种实施例中，电磁吸波结构中的正六边形导电环依次分布，在X轴方向的周期为13.73mm，在Y轴方向的周期为7.93mm，相邻正六边形导电环的栅格角(Grid angle)为30°。In one embodiment, the regular hexagonal conductive rings in the electromagnetic absorbing structure are distributed sequentially, the period in the X-axis direction is 13.73mm, the period in the Y-axis direction is 7.93mm, and the grid of the adjacent regular hexagonal conductive rings Grid angle is 30°.
在所述阻抗型频率选择表面生成正六边形导电环的一种可选实现方式可以为：在所述阻抗型频率选择表面衬底上通过喷印、电化学腐蚀或磁控溅射生成对应的正六边形导电环，所述正六边形导电环的材料为金、银、铜中的一种或者多种。在一种实施例中，可以在阻抗型频率选择表面衬底上沉积金属铜材料，从而生成金属铜材料的正六边形导电环。An optional implementation of generating a regular hexagonal conductive ring on the impedance-type frequency selective surface may be: generating a corresponding conductive ring on the impedance-type frequency selective surface substrate by spray printing, electrochemical corrosion or magnetron sputtering A regular hexagonal conductive ring, the material of the regular hexagonal conductive ring is one or more of gold, silver and copper. In one embodiment, metallic copper material may be deposited on an impedance-type frequency selective surface substrate, thereby creating regular hexagonal conductive rings of metallic copper material.
其中，所述正六边形导电环的环边边长范围为3.9～4.1mm，所述正六边形导电环的环边宽度范围为0.9～1.1mm，两个相邻正六边形导电环之间的间距范围为0.6～1.0mm，所述正六边形导电环上用于加载电阻的缝隙范围为0.1～1.0mm，所述电阻的阻值范围为75～85Ω。在一种可选实施例中，所述正六边形导电环的环边边长为4.0mm，正六边形导电环的环边宽度为1.0mm，两个相邻正六边形导电环之间的间距为0.8mm，所述正六边形导电环上用于加载电阻的缝隙为0.8mm。Wherein, the ring side length of the regular hexagonal conductive ring ranges from 3.9 to 4.1 mm, and the ring side width range of the regular hexagonal conductive ring is 0.9 to 1.1 mm. Between two adjacent regular hexagonal conductive rings The spacing range of the regular hexagonal conductive ring is 0.6-1.0mm, the gap for loading the resistor on the regular hexagonal conductive ring is in the range of 0.1-1.0mm, and the resistance value of the resistor is in the range of 75-85Ω. In an optional embodiment, the ring side length of the regular hexagonal conductive ring is 4.0 mm, the ring side width of the regular hexagonal conductive ring is 1.0 mm, and the distance between two adjacent regular hexagonal conductive rings The spacing is 0.8 mm, and the gap for loading the resistor on the regular hexagonal conductive ring is 0.8 mm.
进一步的，所述正六边形导电环中的电阻包括：集总贴片电阻元件或者磁控溅射、丝网印刷、喷印中的一种或多种方法制备得到的等效电阻中的一种或者多种。也就是说，本发明实施例中在正六边形导电环的每条边上中间位置或者顶点位置，可以加载集总贴片电阻元件作为电阻，该电阻的阻值为81Ω；正六边形导电环和电阻均位于阻抗型频率选择表面上。Further, the resistance in the regular hexagonal conductive ring includes: one of the lumped chip resistance elements or the equivalent resistance prepared by one or more methods of magnetron sputtering, screen printing, and jet printing one or more species. That is to say, in the embodiment of the present invention, at the middle position or the vertex position on each side of the regular hexagonal conductive ring, a lumped chip resistance element can be loaded as a resistor, and the resistance value of the resistor is 81Ω; the regular hexagonal conductive ring and resistors are located on an impedance-type frequency selective surface.
介质层30的材料对应的相对介电常数范围为1.01～1.08，所述介质层的厚度范围为2.9～3.3mm。可选的，介质层30可以是相对介电常数为1.05的PMI泡沫，介质层的厚度为5.9mm。The material of the dielectric layer 30 corresponds to a relative permittivity in the range of 1.01-1.08, and the thickness of the dielectric layer is in the range of 2.9-3.3 mm. Optionally, the dielectric layer 30 may be PMI foam with a relative dielectric constant of 1.05, and the thickness of the dielectric layer is 5.9 mm.
所述金属层的材料为铜，所述金属层的厚度为0.035mm。The material of the metal layer is copper, and the thickness of the metal layer is 0.035mm.
在本申请的一种实施例中，可以基于表层介质阵列层10、阻抗匹配介质层21、阻抗型频率选择表面22、阻抗型频率选择表面衬底23、介质层30和金属层40通过热压工艺形成电磁吸波结构。可选的，所述热压工艺可以为真空热压工艺，通过真空热压工艺使得表层介质阵列层10、阻抗匹配介质层21、阻抗型频率选择表面22、阻抗型频率选择表面衬底23、介质层30和金属层40结合，形成电磁吸波结构。In one embodiment of the present application, based on the surface dielectric array layer 10, the impedance matching dielectric layer 21, the impedance type frequency selective surface 22, the impedance type frequency selective surface substrate 23, the dielectric layer 30 and the metal layer 40, the thermal pressing The process forms an electromagnetic wave-absorbing structure. Optionally, the hot pressing process may be a vacuum hot pressing process, through which the surface dielectric array layer 10, the impedance matching dielectric layer 21, the impedance type frequency selective surface 22, the impedance type frequency selective surface substrate 23, The dielectric layer 30 is combined with the metal layer 40 to form an electromagnetic wave-absorbing structure.
可选的，在热压工艺之后，可以对表层介质阵列材料层采用雕刻机进行雕刻生成表层介质阵列层，所述表层阵列材料层用于生成表层介质阵列层。其中，表层介质阵列材料层在雕刻机进行雕刻之前为一整块，表层介质阵列材料层为相对介电常数为4.3、损耗正切角为0.0025左右的FR4板，厚度为1.1mm。Optionally, after the hot-pressing process, an engraving machine may be used to engrave the surface dielectric array material layer to generate a surface dielectric array layer, and the surface array material layer is used to generate a surface dielectric array layer. Among them, the surface dielectric array material layer is a whole piece before engraving by the engraving machine. The surface dielectric array material layer is an FR4 board with a relative dielectric constant of 4.3 and a loss tangent angle of about 0.0025, with a thickness of 1.1mm.
在雕刻之后，得到介质圆环阵列，介质圆环阵列表层即为介质阵列层，所述介质阵列层中的圆环外径为7.0mm，圆环内径为3.0mm，圆环高度为1.1mm。After engraving, a medium ring array is obtained. The surface layer of the medium ring array is the medium array layer. The outer diameter of the rings in the medium array layer is 7.0 mm, the inner diameter of the rings is 3.0 mm, and the height of the rings is 1.1 mm.
使用仿真软件对本实施例制备的电磁吸波结构进行分析，以确定本发明实施例中的电磁吸波结构的性能。The electromagnetic wave-absorbing structure prepared in this embodiment is analyzed by using simulation software to determine the performance of the electromagnetic wave-absorbing structure in the embodiment of the present invention.
图4为本发明实施例中电磁波垂直入射时，阻抗型频率选择表面正六边形环单元加载不同阻值的电阻所得到的TE波反射率变化曲线的示意图。如图5所示，是本发明在电磁波垂直入射时，阻抗型频率选择表面正六边形导电环加载不同阻值的电阻所得到的TE波(电磁波)反射率变化曲线。本实施例在输入阻值75～85Ω范围内，始终能够在宽带范围内实现-20dB吸收，具有很好的稳定性。Fig. 4 is a schematic diagram of TE wave reflectance variation curves obtained by loading resistors with different resistance values on the regular hexagonal ring unit of the impedance-type frequency selective surface when the electromagnetic wave is vertically incident in the embodiment of the present invention. As shown in FIG. 5 , it is the TE wave (electromagnetic wave) reflectivity variation curve obtained by loading resistors with different resistance values on the regular hexagonal conductive ring on the impedance-type frequency selective surface when the electromagnetic wave is vertically incident in the present invention. In this embodiment, within the input resistance range of 75-85Ω, it can always achieve -20dB absorption in the broadband range, and has good stability.
图5为本发明实施例中在TE波垂直入射时，吸波结构的反射率随阻抗型频率选择表面的正六边形环单元边长变化的示意图。如图5所示，是本发明在TE波垂直入射时，吸波结构的反射率随阻抗型频率选择表面的正六边形导电环边长变化的曲线。本实施例频率正六边形导电环的环边边长在3.9～4.1mm范围内，能够保持反射率在5.5～16.1GHz低于-20dB。Fig. 5 is a schematic diagram of the variation of the reflectivity of the wave-absorbing structure with the side length of the regular hexagonal ring unit of the impedance-type frequency selective surface when the TE wave is vertically incident in the embodiment of the present invention. As shown in FIG. 5 , it is a curve of the reflectivity of the absorbing structure changing with the side length of the regular hexagonal conductive ring of the impedance-type frequency selective surface when the TE wave is vertically incident in the present invention. In this embodiment, the side length of the frequency regular hexagonal conductive ring is in the range of 3.9-4.1 mm, and the reflectivity can be kept below -20 dB at 5.5-16.1 GHz.
图6为本发明实施例中在TE波垂直入射时，吸波结构的反射率随阻抗型频率选择表面的正六边形环单元六个边的宽度变化的曲线的示意图。如图6所示，本发明在TE波垂直入射时，吸波结构的反射率随阻抗型频率选择表面的正六边形导电环六个边的宽度变化的曲线。本实施例频率选择表面单元的环边宽度在0.9～1.1mm范围内，能够保持反射率在5.5～16.0GHz低于-20dB。Fig. 6 is a schematic diagram of curves showing the reflectivity of the absorbing structure changing with the width of the six sides of the regular hexagonal ring unit of the impedance-type frequency selective surface when the TE wave is vertically incident in the embodiment of the present invention. As shown in Fig. 6, when the TE wave is vertically incident in the present invention, the reflectivity of the wave-absorbing structure varies with the width of the six sides of the regular hexagonal conductive ring on the impedance-type frequency selective surface. In this embodiment, the ring edge width of the frequency selective surface unit is in the range of 0.9-1.1 mm, and the reflectivity can be kept below -20dB at 5.5-16.0 GHz.
图7为本发明实施例中在TE波垂直入射时，吸波结构的反射率随阻抗型频率选择表面的正六边形环单元间距变化的曲线的示意图。如图7所示，本发明在TE波垂直入射时，吸波结构的反射率随阻抗型频率选择表面的正六边形导电环间距变化的曲线。本实施例频率选择表面相邻单元间距在0.6～1.0mm范围内，能够保持在宽带范围内实现-20dB吸收。Fig. 7 is a schematic diagram of the curve of the change of the reflectivity of the wave-absorbing structure with the distance between the regular hexagonal ring units of the impedance-type frequency selective surface when the TE wave is vertically incident in the embodiment of the present invention. As shown in Fig. 7, when the TE wave is vertically incident in the present invention, the reflectivity of the wave-absorbing structure varies with the spacing of regular hexagonal conductive rings on the impedance-type frequency selective surface. In this embodiment, the distance between adjacent units of the frequency selective surface is in the range of 0.6-1.0 mm, which can maintain -20dB absorption in the broadband range.
图8为本发明实施例中在TE波垂直入射时，吸波结构的反射率随表面介质阵列单元厚度变化的曲线的示意图。如图8所示，本发明在TE波垂直入射时，吸波结构的反射率随表面介质阵列单元厚度变化的曲线。本实施例在表面介质阵列单元厚度0.9～1.3mm范围内，始终能够在宽带范围内实现-20dB吸收。Fig. 8 is a schematic diagram of the curve of the reflectivity of the absorbing structure changing with the thickness of the surface dielectric array unit when the TE wave is vertically incident in the embodiment of the present invention. As shown in FIG. 8 , the reflectivity of the absorbing structure varies with the thickness of the surface dielectric array unit when the TE wave is vertically incident in the present invention. In this embodiment, within the thickness range of the surface dielectric array unit of 0.9-1.3mm, -20dB absorption can always be realized in the broadband range.
图4-图8表明，本实施例所提出的电磁吸波结构的阻抗型频率选择表面中包括导电环，当电磁波入射所述电磁吸波结构时，所述阻抗型频率选择表面中导电环产生表面感应电流，将电磁能量转变为热量的形式实现能量损耗，增强了电磁波入射所述电磁吸波结构的入射角稳定性，本发明实施例能够改善电磁波入射时吸波结构的吸波性能。Figures 4-8 show that the impedance-type frequency selective surface of the electromagnetic wave-absorbing structure proposed in this embodiment includes a conductive ring. The surface induced current converts electromagnetic energy into heat to realize energy loss and enhances the stability of the incident angle of the electromagnetic wave-absorbing structure. The embodiments of the present invention can improve the wave-absorbing performance of the wave-absorbing structure when electromagnetic waves are incident.
进一步的，本发明实施例中的表层介质阵列层在电磁波入射状态下，对电磁吸波结构整体结构进行阻抗补偿，实现了斜入射状态下更宽的吸波带宽，保持了极佳的吸波性能。Furthermore, the surface dielectric array layer in the embodiment of the present invention performs impedance compensation on the overall structure of the electromagnetic absorbing structure under the incident state of electromagnetic waves, realizing a wider absorbing bandwidth under the state of oblique incidence, and maintaining excellent absorbing performance.
并且，本申请中的电磁吸波结构具有结构参数不敏感特性，具备很高的容差，有利于实际的生产制造。Moreover, the electromagnetic absorbing structure in the present application has the property of insensitivity to structural parameters and has a high tolerance, which is beneficial to actual production and manufacturing.
图9为本发明实施例中不同入射角对应TE波反射率随频率变化图的示意图。图10为本发明实施例中不同入射角对应TE波吸波率随频率变化图的示意图。参考图9-图10所示，本发明的吸波结构在电磁波垂直时，反射率低于-10dB的频带为4.36-18.09GHz；反射率低于-20dB的频带为5.32-16.46GHz。电磁波的入射角为30°时，反射率低于-10dB的频带为4.43-20.46GHz；反射率低于-20dB的频带为5.42-19.04GHz。电磁波的入射角为40°时，反射率低于-10dB的频带为4.51-22.43GHz；反射率低于-15dB的频带为5.14-21.64GHz。电磁波的入射角为50°时，反射率低于-10dB的频带为4.73-23.59GHz。电磁波的入射角为60°时，反射率低于-10dB的频带为5.48-18.00GHz。FIG. 9 is a schematic diagram of the variation of TE wave reflectivity with frequency corresponding to different incident angles in an embodiment of the present invention. FIG. 10 is a schematic diagram of the variation of TE wave absorption rate with frequency corresponding to different incident angles in an embodiment of the present invention. Referring to Figures 9-10, when the electromagnetic wave is perpendicular to the absorbing structure of the present invention, the frequency band with reflectivity lower than -10dB is 4.36-18.09GHz; the frequency band with reflectivity lower than -20dB is 5.32-16.46GHz. When the incident angle of electromagnetic waves is 30°, the frequency band with reflectivity lower than -10dB is 4.43-20.46GHz; the frequency band with reflectivity lower than -20dB is 5.42-19.04GHz. When the incident angle of electromagnetic waves is 40°, the frequency band with reflectivity lower than -10dB is 4.51-22.43GHz; the frequency band with reflectivity lower than -15dB is 5.14-21.64GHz. When the incident angle of electromagnetic waves is 50°, the frequency band in which the reflectivity is lower than -10dB is 4.73-23.59GHz. When the incident angle of the electromagnetic wave is 60°, the frequency band whose reflectivity is lower than -10dB is 5.48-18.00GHz.
可见，本发明实施例中的电磁吸波结构，具有极强的斜入射稳定性和超宽带范围内(例如-20dB)的吸波性能。It can be seen that the electromagnetic absorbing structure in the embodiment of the present invention has extremely strong oblique incidence stability and absorbing performance in an ultra-wideband range (eg -20dB).
进一步的，图11为本发明实施例中不同入射角对应TM波反射率随频率变化图的示意图。图12为本发明实施例中不同入射角对应TM波吸波率随频率变化图的示意图。参考图11-图12所示，本发明的吸波结构在电磁波垂直时，反射率低于-10dB的频带为4.36-18.09GHz；反射率低于-20dB的频带为5.32-16.46GHz。电磁波的入射角为20°时，反射率低于-10dB的频带为4.69-18.84GHz；反射率低于-20dB的频带为5.85-17.01GHz。电磁波的入射角为40°时，反射率低于-10dB的频带为6.09-20.61GHz。Further, FIG. 11 is a schematic diagram of the change of TM wave reflectivity with frequency corresponding to different incident angles in the embodiment of the present invention. Fig. 12 is a schematic diagram of the variation of TM wave absorption rate with frequency corresponding to different incident angles in the embodiment of the present invention. Referring to Figures 11-12, when the electromagnetic wave is perpendicular to the absorbing structure of the present invention, the frequency band whose reflectivity is lower than -10dB is 4.36-18.09GHz; the frequency band whose reflectivity is lower than -20dB is 5.32-16.46GHz. When the incident angle of electromagnetic waves is 20°, the frequency band with reflectivity lower than -10dB is 4.69-18.84GHz; the frequency band with reflectivity lower than -20dB is 5.85-17.01GHz. When the incident angle of electromagnetic waves is 40°, the frequency band whose reflectivity is lower than -10dB is 6.09-20.61GHz.
基于以上，本发明实施例中电磁吸波结构具有如下优势：Based on the above, the electromagnetic absorbing structure in the embodiment of the present invention has the following advantages:
首先，本发明实施例中的电磁吸波结构中的表层介质阵列层在阻抗层之上设置，所述表层介质阵列层能够覆盖阻抗层，所述阻抗层使用寿命大大提高；进一步的，表层介质阵列层上的圆环(如图2中所示)能够与斜入射阻抗匹配补偿，极大的提高了电磁吸波结构的入射角稳定性。First, the surface dielectric array layer in the electromagnetic absorbing structure in the embodiment of the present invention is set above the impedance layer, the surface dielectric array layer can cover the impedance layer, and the service life of the impedance layer is greatly improved; further, the surface dielectric The circular ring on the array layer (as shown in FIG. 2 ) can match and compensate the oblique incident impedance, which greatly improves the stability of the incident angle of the electromagnetic absorbing structure.
进一步的，本发明实施例中的表层介质阵列层和阻抗层中的阻抗匹配介质层协同设计带来的阻抗匹配的优化，使更多的电磁波进入到电磁吸波结构中去，拓宽了吸波带宽，进一步提高了吸波性能。Furthermore, the optimization of impedance matching brought about by the collaborative design of the surface dielectric array layer and the impedance matching dielectric layer in the impedance layer in the embodiment of the present invention allows more electromagnetic waves to enter the electromagnetic wave-absorbing structure, broadening the wave-absorbing structure. The bandwidth further improves the absorbing performance.
另外，本发明实施例中的阻抗型频率选择表面本身具有很宽带宽的电磁能量吸收和很好的阻抗匹配，为此，在阻抗型频率选择表面生成导电环时，能够基于导电环实现宽带高性能的吸收。In addition, the impedance-type frequency selective surface in the embodiment of the present invention itself has a wide bandwidth of electromagnetic energy absorption and good impedance matching. For this reason, when the conductive ring is generated on the impedance-type frequency selective surface, it can be based on the conductive ring. Broadband high Performance Absorption.
并且，阻抗型频率选择表面衬底选用是有损介质材料，在一定厚度下有益于吸波性能的提升；同时该层上中心设置有孔洞，该孔洞带来的衬底透波率的优化，为进一步谐振损耗起到了促进作用。Moreover, the impedance-type frequency selective surface substrate is made of lossy dielectric material, which is beneficial to the improvement of wave-absorbing performance under a certain thickness; at the same time, there is a hole in the center of the layer, and the wave transmittance of the substrate brought about by the hole is optimized. Played a role in promoting further resonance loss.
更进一步的，本发明实施例中还公开了介质层，介质层的厚度决定了谐振损耗发生的频点，本申请中的介质层的材料以及厚度能够与阻抗型频率选择表面相匹配，进一步的提升了宽带高性能吸收。Furthermore, the embodiment of the present invention also discloses a dielectric layer. The thickness of the dielectric layer determines the frequency point at which resonance loss occurs. The material and thickness of the dielectric layer in this application can match the impedance-type frequency selective surface. Further Improved Broadband High Performance Absorption.
最后，本发明实施例中的金属层作为电磁波反射板，能够反射电磁波，使其在阻抗型频率选择表面层和表层介质阵列层实现进一步谐振损耗，为此，本发明实施例中的电磁吸波结构能够在解决了入射角稳定性的问题下，还能都保持超宽带范围内的吸波性能，本发明实施例中的电磁吸波结构能够很好地改善吸波性能。另外，本发明实施例中的电磁吸波结构在微波隐身技术、天线、电磁兼容等领域具有广阔的应用前景。Finally, the metal layer in the embodiment of the present invention is used as an electromagnetic wave reflector, which can reflect electromagnetic waves, so that it can realize further resonance loss in the impedance type frequency selective surface layer and the surface dielectric array layer. Therefore, the electromagnetic wave absorbing plate in the embodiment of the present invention The structure can maintain the wave-absorbing performance in the ultra-broadband range while solving the problem of incident angle stability, and the electromagnetic wave-absorbing structure in the embodiment of the present invention can well improve the wave-absorbing performance. In addition, the electromagnetic absorbing structure in the embodiment of the present invention has broad application prospects in microwave stealth technology, antenna, electromagnetic compatibility and other fields.
基于以上，本发明实施例中的电磁吸波结构优于现有设计，本发明的吸波结构在电磁波垂直时，反射率低于-10dB的频带为4.36-18.09GHz；反射率低于-20dB的频带为5.32-16.46GHz。电磁波的入射角为30°时，反射率低于-10dB的频带为4.43-20.46GHz；反射率低于-20dB的频带为5.42-19.04GHz。电磁波的入射角为40°时，反射率低于-10dB的频带为4.51-22.43GHz；反射率低于-15dB的频带为5.14-21.64GHz。电磁波的入射角为50°时，反射率低于-10dB的频带为4.73-23.59GHz。电磁波的入射角为60°时，反射率低于-10dB的频带为5.48-18.00GHz。具有极强的斜入射稳定性和超宽带范围内的-20dB吸波性能。更进一步而言，本发明的吸波结构在一定程度上满足室外应用场景。Based on the above, the electromagnetic absorbing structure in the embodiment of the present invention is superior to the existing design. When the electromagnetic wave is perpendicular to the absorbing structure of the present invention, the frequency band whose reflectivity is lower than -10dB is 4.36-18.09GHz; the reflectivity is lower than -20dB The frequency band is 5.32-16.46GHz. When the incident angle of electromagnetic waves is 30°, the frequency band with reflectivity lower than -10dB is 4.43-20.46GHz; the frequency band with reflectivity lower than -20dB is 5.42-19.04GHz. When the incident angle of electromagnetic waves is 40°, the frequency band with reflectivity lower than -10dB is 4.51-22.43GHz; the frequency band with reflectivity lower than -15dB is 5.14-21.64GHz. When the incident angle of electromagnetic waves is 50°, the frequency band in which the reflectivity is lower than -10dB is 4.73-23.59GHz. When the incident angle of the electromagnetic wave is 60°, the frequency band whose reflectivity is lower than -10dB is 5.48-18.00GHz. It has strong oblique incidence stability and -20dB absorbing performance in the ultra-wideband range. Furthermore, the absorbing structure of the present invention satisfies outdoor application scenarios to a certain extent.
上文描述了本发明实施例提供的多个实施例方案，各实施例方案介绍的各可选方式可在不冲突的情况下相互结合、交叉引用，从而延伸出多种可能的实施例方案，这些均可认为是本发明实施例披露、公开的实施例方案。Multiple embodiment solutions provided by the embodiments of the present invention are described above, and the optional modes introduced by each embodiment solution can be combined and cross-referenced without conflict, thereby extending a variety of possible embodiment solutions, All of these can be regarded as the embodiment disclosures of the present invention and the disclosed embodiment solutions.
虽然本发明实施例披露如上，但本发明并非限定于此。任何本领域技术人员，在不脱离本发明的精神和范围内，均可作各种更动与修改，因此本发明的保护范围应当以权利要求所限定的范围为准。Although the embodiments of the present invention are disclosed above, the present invention is not limited thereto. Any person skilled in the art can make various changes and modifications without departing from the spirit and scope of the present invention, so the protection scope of the present invention should be based on the scope defined in the claims.
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102291970A (en) * | 2011-05-06 | 2011-12-21 | 东南大学 | Single frequency band microwave absorber and multiple frequency band microwave absorber |
| CN104553221A (en) * | 2015-01-20 | 2015-04-29 | 浙江大学 | High-performance spectral selectivity wave-absorbing element and solar heat photovoltaic system |
| CN106207486A (en) * | 2016-07-13 | 2016-12-07 | 李寅辉 | A kind of Graphene prints absorbing material and preparation method thereof |
| CN107302139A (en) * | 2017-06-19 | 2017-10-27 | 中南大学 | A kind of dielectric structure type multiband radar absorbing material based on advanced low-k materials |
| CN108400447A (en) * | 2018-02-07 | 2018-08-14 | 中南大学 | A kind of three-dimensional multiband radar absorbing material |
| CN114204279A (en) * | 2021-12-14 | 2022-03-18 | 中南大学 | A Resistive Loaded Square Ring Ultra-Broadband Absorber Structure |
| CN114336086A (en) * | 2022-01-06 | 2022-04-12 | 中南大学 | An Ultra-Broadband Absorber Structure for Antenna RCS Reduction |
-
2022
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Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102291970A (en) * | 2011-05-06 | 2011-12-21 | 东南大学 | Single frequency band microwave absorber and multiple frequency band microwave absorber |
| CN104553221A (en) * | 2015-01-20 | 2015-04-29 | 浙江大学 | High-performance spectral selectivity wave-absorbing element and solar heat photovoltaic system |
| CN106207486A (en) * | 2016-07-13 | 2016-12-07 | 李寅辉 | A kind of Graphene prints absorbing material and preparation method thereof |
| CN107302139A (en) * | 2017-06-19 | 2017-10-27 | 中南大学 | A kind of dielectric structure type multiband radar absorbing material based on advanced low-k materials |
| CN108400447A (en) * | 2018-02-07 | 2018-08-14 | 中南大学 | A kind of three-dimensional multiband radar absorbing material |
| CN114204279A (en) * | 2021-12-14 | 2022-03-18 | 中南大学 | A Resistive Loaded Square Ring Ultra-Broadband Absorber Structure |
| CN114336086A (en) * | 2022-01-06 | 2022-04-12 | 中南大学 | An Ultra-Broadband Absorber Structure for Antenna RCS Reduction |
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