CN115296040A - Resistance loading regular hexagonal ring ultra wide band wave absorbing structure - Google Patents
Resistance loading regular hexagonal ring ultra wide band wave absorbing structure Download PDFInfo
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- CN115296040A CN115296040A CN202210939066.1A CN202210939066A CN115296040A CN 115296040 A CN115296040 A CN 115296040A CN 202210939066 A CN202210939066 A CN 202210939066A CN 115296040 A CN115296040 A CN 115296040A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q17/00—Devices for absorbing waves radiated from an antenna; Combinations of such devices with active antenna elements or systems
- H01Q17/008—Devices for absorbing waves radiated from an antenna; Combinations of such devices with active antenna elements or systems with a particular shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
- H01Q15/0006—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
- H01Q15/0013—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
- H01Q15/0006—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
- H01Q15/0013—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective
- H01Q15/0026—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective said selective devices having a stacked geometry or having multiple layers
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- Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
Abstract
The invention discloses a resistance-loaded regular hexagonal ring ultra-wideband wave-absorbing structure which comprises a plurality of wave-absorbing units in regular hexagonal prisms, wherein each wave-absorbing unit comprises a surface skin dielectric layer, an impedance matching dielectric layer, an impedance type frequency selection surface substrate, a dielectric layer and a metal layer, the surface skin dielectric layer is arranged from top to bottom in sequence and used for protecting an inner layer structure and matching broadband impedance, the impedance matching dielectric layer is used for cooperatively matching impedance with the surface skin dielectric layer so as to improve the stability of an incidence angle, the impedance type frequency selection surface is used for matching impedance so as to realize broadband high-performance absorption, the impedance type frequency selection surface substrate is used for promoting bandwidth increase, the dielectric layer is used for matching with the impedance type frequency selection surface and carrying out interference cancellation so as to realize broadband high-performance absorption, and the metal layer is used for reflecting electromagnetic waves and carrying out interference cancellation with incident electromagnetic waves in the dielectric layer. The loading-resisting regular hexagonal ring ultra-wideband wave-absorbing structure has the polarization insensitivity and excellent incident angle stability, and meets the outdoor application scene to a certain extent.
Description
Technical Field
The invention relates to an electromagnetic wave absorbing technology, in particular to a resistance-loaded regular hexagonal ring ultra-wideband wave absorbing structure.
Background
In the past years, electromagnetic (EM) wave absorption technology has been applied in various fields, such as satellite navigation systems, electromagnetic energy collection, stealth fields, and the like. The Jaumann wave-absorbing structure is one of the classic wave-absorbing structures provided since the 1930 s, and is a staggered cascade structure of a dielectric layer and a resistance layer, so that the electromagnetic wave reflection from a conductive surface can be effectively reduced. And a Salisbury screen based essentially on a single-layer Jaumann wave-absorbing structure was patented in 1952.
Since the above absorber utilizes the principle of electromagnetic resonance, a key method for expanding the absorption band is to increase the number of resonance frequencies by introducing a plurality of resistive layers. However, the design of multiple resistive layers necessarily results in increased thickness and process complexity. As an extension of the Jaumann wave-absorbing structure, researchers provide an impedance type frequency selection surface wave-absorbing structure, namely a circuit simulation wave-absorbing structure. The circuit simulation wave-absorbing structure can overcome the limitation of narrow band and over-thick thickness through multiple resonance and multilayer technology, and greatly broadens the application prospect of the wave-absorbing structure.
It should be noted, however, that almost all electromagnetic absorbing structures are designed for 10dB absorption. Furthermore, some of these designs are not useful in outdoor environments due to their fragile mechanical properties and surface protection measures. Furthermore, for single layer absorbers, the existing structures have far from reaching the limit of absorption performance. Aiming at the defects of the existing electromagnetic wave absorbing structure, the research and development of a high-performance ultra-wideband wave absorbing structure is necessary.
Disclosure of Invention
The invention aims to provide a loading-resisting regular hexagonal ring ultra-wideband wave-absorbing structure which has polarization insensitivity and excellent incident angle stability and meets the outdoor application scene to a certain extent.
In order to achieve the purpose, the invention provides a resistance-loaded regular hexagonal ring ultra-wideband wave-absorbing structure which comprises a plurality of regular hexagonal prism wave-absorbing units, wherein each wave-absorbing unit comprises a surface skin dielectric layer, an impedance matching dielectric layer, an impedance type frequency selection surface substrate, a dielectric layer and a metal layer, the surface skin dielectric layer is arranged from top to bottom in sequence and used for protecting an inner layer structure and matching broadband impedance, the impedance matching dielectric layer is used for cooperatively matching impedance with the surface skin dielectric layer to improve the stability of an incidence angle, the impedance type frequency selection surface is used for matching impedance to achieve broadband high-performance absorption, the impedance type frequency selection surface substrate is used for promoting bandwidth increase, the dielectric layer is used for matching with the impedance type frequency selection surface and generating interference cancellation to achieve broadband high-performance absorption, and the metal layer is used for reflecting electromagnetic waves and generating interference cancellation with the incident electromagnetic waves in the dielectric layer.
Preferably, the surface skin dielectric layer is an FR4 plate with the relative dielectric constant of 4.2-4.5, the thickness of 0.1-0.4 mm and the loss tangent angle of 0.0025.
Preferably, the impedance matching dielectric layer has a relative dielectric constant of 1.01-1.08 and a thickness of 2.6-3.0 mm.
Preferably, the impedance type frequency selective surface comprises a plurality of conductive regular hexagonal rings periodically arranged on the impedance type frequency selective surface substrate, and a resistor is arranged at the midpoint of each side of each conductive regular hexagonal ring;
the conductive regular hexagonal ring is provided with a gap for loading the resistor, and the width of the gap is 0.1-1 mm;
the distance between two adjacent conductive regular hexagonal rings is 0.8-1.2 mm.
Preferably, the conductive regular hexagonal ring is made of one of gold, silver and copper;
the conductive regular hexagonal ring is prepared on the impedance type frequency selective surface substrate through spray printing, electrochemical corrosion or magnetron sputtering;
the side length of the conductive regular hexagonal ring is 4.8-5.2 mm, and the width of each side is 0.9-1.1 mm.
Preferably, the resistor is a lumped chip resistor element or an equivalent resistor obtained by one or more of magnetron sputtering, screen printing and jet printing;
the resistance value of the resistor is 240-280 omega, and the distance between two adjacent resistors is 0.1-1 mm.
Preferably, the resistive frequency selective surface substrate is one of a PI film, a PEN film, an FR4 plate, and an F4B plate having a thickness of 0.02 to 0.5 mm.
Preferably, the impedance type frequency selective surface substrate is an FR4 plate with a relative dielectric constant of 4.2-4.5, a thickness of 0.1-0.4 mm and a loss tangent angle of 0.0025.
Preferably, the relative dielectric constant of the dielectric layer is between 1.01 and 1.08, and the thickness is between 2.6 and 3.0 mm;
the metal layer is a copper foil.
Preferably, the wave absorbing unit is formed by vacuum hot-press molding of the surface skin dielectric layer, the impedance matching dielectric layer, the impedance type frequency selective surface substrate, the dielectric layer and the metal layer.
Most incident electromagnetic waves generate surface induced current on a conductive regular hexagonal ring on the impedance type frequency selection surface, and electromagnetic energy is converted into heat; after a small part of incident electromagnetic waves enter the wave absorbing unit, the metal layer back plate generates reflection to form reflected waves, and the reflected waves and the incident electromagnetic waves are subjected to interference cancellation absorption in the dielectric layer.
The invention therefore has the following properties:
1. when the light is vertically incident, the bandwidth with the reflectivity lower than-10 dB is 4.9GHz-20.3GHz; the bandwidth with the reflectivity lower than-20 dB is 6.3GHz-19.2GHz.
2. The polarization insensitive electromagnetic wave has the polarization insensitive characteristic, and the characteristics of TE waves and TM waves are mutually matched when the electromagnetic waves are vertically incident.
3. Has excellent incident angle stability, and the TE wave of the absorber still shows absorption rate higher than 90% in the range of 5.9GHz-17.4GHz under the oblique incidence of 50 degrees.
4. And the outdoor application scene is met to a certain extent.
The technical solution of the present invention is further described in detail by the accompanying drawings and embodiments.
Drawings
Fig. 1 is a schematic cross-sectional structure of the present invention.
FIG. 2 is a schematic diagram of the cell structure of the present invention.
FIG. 3 is a schematic diagram of the periodic arrangement of the impedance type frequency selective surface structure unit according to the present invention.
FIG. 4 is a graph showing the TE wave reflectivity with frequency variation obtained by loading resistors with different resistances on the regular hexagonal ring unit with impedance type frequency selective surface when the electromagnetic wave is vertically incident.
FIG. 5 is a diagram showing the frequency dependence of the reflection rate of TM wave obtained by loading resistors with different resistance values on the regular hexagonal ring unit with the impedance type frequency selective surface when the electromagnetic wave is vertically incident.
FIG. 6 is a surface current distribution diagram of the wave-absorbing structure when the resistance of the loading resistor is 260 Ω and the frequency point is 6.5GHz when electromagnetic waves are vertically incident.
FIG. 7 is a surface current distribution diagram of the wave-absorbing structure when the resistance of the loading resistor is 260 Ω and the frequency point of the vertical incidence of electromagnetic waves is 12.5 GHz.
FIG. 8 is a surface current distribution diagram of the wave-absorbing structure when the frequency point is 19GHz when the electromagnetic wave is vertically incident when the resistance value of the loading resistor is 260 Ω.
FIG. 9 is a graph showing the TE wave reflectivity with frequency variation corresponding to different incident angles when the loading resistor has a resistance of 260 Ω according to the present invention.
FIG. 10 is a diagram of the reflection rate of TM wave with frequency variation corresponding to different incident angles when the resistance of the loading resistor is 260 Ω.
Fig. 11 shows TE wave absorption rates corresponding to different incident angles when the loading resistor has a resistance of 260 Ω.
Fig. 12 shows TM wave absorption rates corresponding to different incident angles when the loading resistor resistance is 260 Ω.
Wherein: 1. covering a dielectric layer on the surface; 2. an impedance matching dielectric layer; 3. an impedance-type frequency selective surface; 4. an impedance type frequency selective surface substrate; 5. a dielectric layer; 6. a metal layer; 7. a conductive regular hexagonal ring; 8. and (4) resistance.
Detailed Description
The present invention will be further described with reference to the accompanying drawings, and it should be noted that the present embodiment is based on the technical solution, and the detailed implementation and the specific operation process are provided, but the protection scope of the present invention is not limited to the present embodiment.
Fig. 1 is a schematic cross-sectional structure of the present invention. FIG. 2 is a schematic diagram of the cell structure of the present invention. FIG. 3 is a schematic diagram of the periodic arrangement of the impedance type frequency selective surface structure unit according to the present invention. FIG. 4 is a graph showing the TE wave reflectivity with frequency variation obtained by loading resistors with different resistances on the regular hexagonal ring unit with impedance type frequency selective surface when the electromagnetic wave is vertically incident. FIG. 5 is a diagram showing the frequency dependence of the reflection rate of TM wave obtained by loading resistors with different resistance values on the regular hexagonal ring unit with the impedance type frequency selective surface when the electromagnetic wave is vertically incident. FIG. 6 is a surface current distribution diagram of the wave-absorbing structure when the resistance of the loading resistor is 260 Ω and the frequency point of the vertical incidence of electromagnetic waves is 6.5 GHz. FIG. 7 is a surface current distribution diagram of the wave-absorbing structure when the resistance of the loading resistor is 260 Ω and the frequency point of the vertical incidence of electromagnetic waves is 12.5 GHz. FIG. 8 is a surface current distribution diagram of the wave-absorbing structure when the frequency point is 19GHz when the electromagnetic wave is vertically incident when the resistance value of the loading resistor is 260 Ω. FIG. 9 is a graph of TE wave reflectivity with frequency variation corresponding to different incident angles when the loading resistor has a resistance of 260 Ω according to the present invention. FIG. 10 is a diagram of the reflection rate of TM wave with frequency variation corresponding to different incident angles when the resistance of the loading resistor is 260 Ω. Fig. 11 shows TE wave absorption rates corresponding to different incident angles when the loading resistor has a resistance of 260 Ω. Fig. 12 shows TM wave absorption rates corresponding to different incident angles when the loading resistor resistance is 260 Ω. As shown in fig. 1-3, the structure of the present invention includes several regular hexagonal prism wave-absorbing units, and the wave-absorbing units include a surface skin dielectric layer for protecting the inner layer structure and matching the broadband impedance, an impedance matching dielectric layer for matching the impedance cooperatively with the surface skin dielectric layer to improve the stability of the incident angle, an impedance frequency selective surface for matching the impedance to achieve broadband high-performance absorption, an impedance frequency selective surface substrate for promoting bandwidth increase, a dielectric layer for matching the impedance frequency selective surface and performing destructive interference to achieve broadband high-performance absorption, and a metal layer for reflecting electromagnetic waves and performing destructive interference with the incident electromagnetic waves in the dielectric layer, which are sequentially arranged from top to bottom.
Preferably, the surface skin dielectric layer is an FR4 plate with a relative dielectric constant of 4.2-4.5, a thickness of 0.1-0.4 mm and a loss tangent angle of 0.0025.
Preferably, the impedance matching medium layer has a relative dielectric constant of 1.01-1.08 and a thickness of 2.6-3.0 mm, and the impedance matching medium layer is PMI foam having a relative dielectric constant of 1.05 and a thickness of 2.8 mm.
Preferably, the impedance type frequency selective surface comprises a plurality of conductive regular hexagonal rings periodically arranged on the impedance type frequency selective surface substrate, the period in the X direction is 16.500mm, the period in the Y direction is 9.526mm, and Grid angle of adjacent units is 30 °;
resistors are arranged at the middle points of each edge of the conductive regular hexagonal ring; the conductive regular hexagonal ring is provided with a gap for loading the resistor, and the width of the gap is 0.1-1 mm;
the distance between two adjacent conductive regular hexagonal rings is 0.8-1.2 mm.
Preferably, the conductive regular hexagonal ring is made of one of gold, silver and copper;
the conductive regular hexagonal ring is prepared on the impedance type frequency selective surface substrate through spray printing, electrochemical corrosion or magnetron sputtering; the side length of the conductive regular hexagonal ring is between 4.8 and 5.2mm, and the width of each side is between 0.9 and 1.1 mm. Preferably, the resistor is a lumped chip resistor element or an equivalent resistor obtained by one or more of magnetron sputtering, screen printing and jet printing; the resistance value of the resistor is 240-280 omega, and the distance between two adjacent resistors is 0.1-1 mm. In this embodiment, a magnetron sputtering method is used to deposit a conductive regular hexagonal ring made of metallic silver on the impedance type frequency selective surface substrate, the side length of the conductive regular hexagonal ring is 5mm, the width of each side is 1mm, the distance between the conductive regular hexagonal rings of two adjacent conductive units is 1mm, and the resistance value of the middle resistor on each side of the conductive regular hexagonal ring is 260 Ω.
Preferably, the impedance type frequency selective surface substrate is one of a PI film, a PEN film, an FR4 board, and an F4B board having a thickness of 0.02 to 0.5 mm.
Preferably, the impedance type frequency selective surface substrate is an FR4 board having a relative dielectric constant of 4.2 to 4.5, a thickness of 0.1 to 0.4mm, and a loss tangent angle of 0.0025, and further, the impedance type frequency selective surface substrate is an FR4 board having a relative dielectric constant of 4.3, a thickness of 0.3mm, and a loss tangent angle of 0.0025.
Preferably, the relative dielectric constant of the dielectric layer is between 1.01 and 1.08, and the thickness is between 2.6 and 3.0 mm; the dielectric layer is PMI foam with the relative dielectric constant of 1.05 and the thickness of 5.6 mm.
The metal layer is a copper foil, and the thickness of the metal layer is 0.035mm.
Preferably, the wave absorbing unit is formed by vacuum hot-press molding of the surface skin dielectric layer, the impedance matching dielectric layer, the impedance type frequency selective surface substrate, the dielectric layer and the metal layer.
Simulation software is used for analyzing the resistance-loaded regular hexagonal ring ultra-wideband wave-absorbing structure prepared in the embodiment to explain the working characteristics of the structure.
As shown in fig. 4 and 5, when the input resistance value fluctuates by ± 20 Ω, the reflectivity of 6.5GHz-19GHz can be always lower than-20 dB, and it can be seen that the invention has good stability.
A field monitor is arranged in simulation software, and the working mechanism of the invention in the wave-absorbing frequency band is analyzed according to the current distribution of the field monitor.
In the first embodiment, as shown in fig. 6, at this time, the current at the two resistors in the Y direction is the minimum, the current at the two resistors in the Y direction is moderate, and the current at the vertex of the regular hexagon ring on the two sides of the Y axis is large, so the TE wave electromagnetic energy consumption is mainly the wave absorption by the combined action of the resistors on the two sides in the Y direction and the interference cancellation of electromagnetic waves entering the wave absorption structure and reflected by the metal back plate; meanwhile, in the TM wave current distribution diagram, the areas with larger current are seen in the four vertex areas on the two sides of the X axis of the regular hexagonal ring, and then the resistance of the regular hexagonal ring on the side parallel to the X axis is followed, so the energy consumption of the part of the TM wave for converting the electromagnetic energy into the thermal energy is different from that of the TM wave.
In the second embodiment, as shown in fig. 7, the basic mechanism is the same as that of the first embodiment, but the current is significantly larger, which means that the impedance matching degree of the frequency point is higher than that of the first embodiment, and the electromagnetic energy is converted into the heat energy with a larger percentage under the condition of the same wave absorption performance.
Third embodiment, as shown in fig. 8, shows a completely different current distribution from the first and second embodiments, and it can be seen from fig. 9 that the current distribution on the conductive hexagonal ring is relatively uniform, and each resistor contributes little to the conversion of electromagnetic energy into thermal energy.
Fourth embodiment, as shown in fig. 9, the reflectance of this example changes when the TE wave incidence angle changes. When the incident angle is less than 30 degrees, the reflectivity can be kept to be lower than-10 dB from 5GHz to 20 GHz; the reflectivity between 6GHz and 17.3GHz can be kept to be lower than-10 dB when the incidence angle is within 50 degrees; as shown in fig. 11, the wave absorption rate of the present embodiment is greater than 90% in the above frequency band range.
Example five, as shown in fig. 10, the reflectivity of this example changes as the angle of incidence of the TM wave changes. When the incident angle is less than 30 degrees, the reflectivity can be kept to be lower than-10 dB from 6GHz to 20 GHz; as shown in fig. 12, the absorption rate of the present example is greater than 90% in the above frequency band range.
Therefore, the loading-resisting regular hexagonal ring ultra-wideband wave-absorbing structure has polarization insensitivity and excellent incident angle stability, and meets the outdoor application scene to a certain extent.
Finally, it should be noted that: the above embodiments are only for illustrating the technical solutions of the present invention and not for limiting the same, and although the present invention is described in detail with reference to the preferred embodiments, those of ordinary skill in the art should understand that: modifications and equivalents may be made to the disclosed embodiments without departing from the spirit and scope of the present invention.
Claims (10)
1. The utility model provides a resistance loading regular hexagon shape ring ultra wide band absorbing structure which characterized in that: the wave absorbing unit comprises a plurality of wave absorbing units in a regular hexagonal prism shape, wherein the wave absorbing units comprise surface skin dielectric layers which are sequentially arranged from top to bottom and used for protecting an inner layer structure and matching broadband impedance, impedance matching dielectric layers used for matching impedance with the surface skin dielectric layers in a cooperative mode so as to improve stability of an incident angle, impedance type frequency selection surfaces used for matching impedance so as to achieve broadband high-performance absorption, impedance type frequency selection surface substrates used for promoting bandwidth increase, dielectric layers used for matching with the impedance type frequency selection surfaces and performing interference cancellation so as to achieve broadband high-performance absorption, and metal layers used for reflecting electromagnetic waves and performing interference cancellation with the incident electromagnetic waves in the dielectric layers.
2. The structure of claim 1, wherein the structure is characterized in that: the surface skin dielectric layer is an FR4 plate with the relative dielectric constant of 4.2-4.5, the thickness of 0.1-0.4 mm and the loss tangent angle of 0.0025.
3. The structure of claim 1, wherein the structure is characterized in that: the relative dielectric constant of the impedance matching dielectric layer is between 1.01 and 1.08, and the thickness of the impedance matching dielectric layer is between 2.6 and 3.0 mm.
4. The ultra-wideband wave absorbing structure with the resistor loaded and the regular hexagonal ring as claimed in claim 1, wherein: the impedance type frequency selection surface comprises a plurality of conductive regular hexagonal rings periodically arranged on the impedance type frequency selection surface substrate, and a resistor is arranged at the middle point of each side of each conductive regular hexagonal ring;
the conductive regular hexagonal ring is provided with a gap for loading the resistor, and the width of the gap is 0.1-1 mm;
the distance between two adjacent conductive regular hexagonal rings is 0.8-1.2 mm.
5. The ultra-wideband wave absorbing structure with the resistor loaded and the regular hexagonal ring as claimed in claim 4, wherein: the conductive regular hexagonal ring is made of one of gold, silver and copper;
the conductive regular hexagonal ring is prepared on the impedance type frequency selective surface substrate through spray printing, electrochemical corrosion or magnetron sputtering;
the side length of the conductive regular hexagonal ring is between 4.8 and 5.2mm, and the width of each side is between 0.9 and 1.1 mm.
6. The ultra-wideband wave absorbing structure with the resistor loaded and the regular hexagonal ring as claimed in claim 4, wherein: the resistor is a lumped chip resistor element or an equivalent resistor obtained by one or more of magnetron sputtering, screen printing and jet printing;
the resistance value of the resistor is 240-280 omega, and the distance between two adjacent resistors is 0.1-1 mm.
7. The ultra-wideband wave absorbing structure with the resistor loaded and the regular hexagonal ring as claimed in claim 1, wherein: the impedance type frequency selection surface substrate is one of a PI film, a PEN film, an FR4 board and an F4B board with the thickness of 0.02-0.5 mm.
8. The structure of claim 1, wherein the structure is characterized in that: the impedance type frequency selection surface substrate is an FR4 board with the relative dielectric constant of 4.2-4.5, the thickness of 0.1-0.4 mm and the loss tangent angle of 0.0025.
9. The ultra-wideband wave absorbing structure with the resistor loaded and the regular hexagonal ring as claimed in claim 1, wherein: the relative dielectric constant of the dielectric layer is between 1.01 and 1.08, and the thickness of the dielectric layer is between 2.6 and 3.0 mm;
the metal layer is a copper foil.
10. The structure of claim 1, wherein the structure is characterized in that: the wave absorbing unit is formed by vacuum hot-pressing the surface skin dielectric layer, the impedance matching dielectric layer, the impedance type frequency selective surface substrate, the dielectric layer and the metal layer.
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| CN202210939066.1A CN115296040A (en) | 2022-08-05 | 2022-08-05 | Resistance loading regular hexagonal ring ultra wide band wave absorbing structure |
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| CN202210939066.1A CN115296040A (en) | 2022-08-05 | 2022-08-05 | Resistance loading regular hexagonal ring ultra wide band wave absorbing structure |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117374604A (en) * | 2023-11-07 | 2024-01-09 | 中南大学 | Active frequency selective surface structure based on PIN diode |
| CN117374604B (en) * | 2023-11-07 | 2024-06-04 | 中南大学 | Active frequency selective surface structure based on PIN diode |
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2022
- 2022-08-05 CN CN202210939066.1A patent/CN115296040A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117374604A (en) * | 2023-11-07 | 2024-01-09 | 中南大学 | Active frequency selective surface structure based on PIN diode |
| CN117374604B (en) * | 2023-11-07 | 2024-06-04 | 中南大学 | Active frequency selective surface structure based on PIN diode |
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