CN111883932A - Low radar scattering cross section reflective array antenna based on artificial surface plasmon - Google Patents

Abstract

The invention proposes a reflection array antenna with low radar scattering cross section, which mainly solves the problems of the reduced frequency band and narrow angular domain of the radar scattering cross section of the existing reflection array antenna. It includes a feed (1) and a reflection front (2) located below the feed, the reflection front includes M×N reflection units (3) with the same structure and different parameters, and each reflection unit includes four dielectric substrates and a metal surface printed on each dielectric substrate, each metal surface is composed of upper and lower metal branches and metal branches, wherein the upper metal branch is composed of three metal patches, and the lower metal branch is composed of five metal patches In the structure, the four dielectric substrates are laminated two by two to form two laminated dielectric substrates (31, 32), and the two laminated dielectric substrates are placed vertically to form a cross-shaped structure. While ensuring the radiation efficiency of the reflection array antenna, the invention realizes the reduction of the radar scattering cross section in the range of wide frequency band and wide angle domain, and can be used in various long-distance wireless communication systems.

Description

Low radar cross section reflectarray antenna based on artificial surface plasmon

technical field

The invention belongs to the technical field of electromagnetic fields and microwaves, and in particular relates to a reflection array antenna with low radar scattering cross section, which can be used in various long-distance wireless communication systems.

Background technique

Surface plasmon polaritons (SSPs) are electromagnetic oscillations formed by the interaction of free electrons and photons in the metal surface area, and are a surface electromagnetic wave propagating along the interface between the metal and the medium. In the microwave frequency or terahertz frequency band, metals cannot excite surface plasmons. The artificially designed periodic structure can support surface waves with a similar dispersion relationship to surface plasmons. Such surface waves are called artificial surface plasmons. Polar SSPP, and this periodic structure is called artificial surface plasmon structure. The artificial surface plasmon structure working in the microwave or terahertz frequency band has good transmission and cut-off characteristics of electromagnetic waves. The relevant parameters of this structure can change its dispersion relationship, and then change its transmission and cut-off characteristics of electromagnetic waves. Based on the above characteristics, the artificial surface plasmon structure can be well applied in research fields such as frequency selective surface FSS and antenna radar cross section RCS reduction.

With the development of satellite communication, radar technology and ordinary civil communication, communication systems have higher and higher requirements for antennas. Today's complex electromagnetic environment requires antennas to have strong anti-interference capabilities and long communication distances, which requires antennas to have The characteristics of high gain and high efficiency, high-gain antennas play a pivotal role in the application of antennas. At present, the main high-gain antennas include reflector antennas and microstrip array antennas. Among them, reflector antennas have high gain, high efficiency, and no complexity. The characteristics of the feed network, but its large size and high profile shortcomings limit the scope of its application. The microstrip array antenna has the characteristics of small size, light weight and low cost, but its feeding network design is complicated and the loss of the feeding network is high. Reflect array antenna combines the advantages of both, that is, there is no complicated feeding network, and it has the characteristics of small size, light weight and low cost, so it has been widely used.

In order to increase the gain of the antenna, the most common method is to increase the radiation aperture of the antenna. Therefore, the existing high-gain antennas usually have a large area, which leads to a large radar cross section of the antenna. The methods include shaping the antenna structure, using radar absorbing materials, and using additional frequency selective surfaces as radomes. Although the existing methods can reduce the antenna radar scattering cross section to a certain extent, the reduced frequency band range and angular domain. The range is still limited, and in addition, many methods of reducing the radar cross section of the antenna can affect the radiation performance of the antenna and reduce the efficiency of the antenna.

SUMMARY OF THE INVENTION

The purpose of the present invention is to design a low radar cross section reflect array antenna based on artificial surface plasmon in view of the above-mentioned defects in the prior art, so as to improve the reduction of radar cross section under the premise of ensuring the good radiation performance of the antenna. Frequency band range and angular domain range.

In order to achieve the above purpose, the present invention is based on the artificial surface plasmon low radar scattering cross section reflect array antenna, including a feed 1 and a reflection front 2, the reflection front 2 is composed of M × N with the same structure and parameters. Different reflection units 3 are formed, which are characterized by:

The reflection unit 3 adopts a cross-shaped structure, that is, a three-dimensional artificial surface plasmon structure formed by the cross of the first laminated dielectric plate 31 and the second laminated dielectric plate 32;

The first laminated dielectric board 31 is composed of a first dielectric substrate 311 , a second dielectric substrate 312 , and a first left metal surface 313 and a first right metal surface 314 printed on both sides of the surface of the first dielectric substrate 311 , and The metal-printed side of the first dielectric substrate 311 is pasted with the second dielectric substrate 312;

The second laminated dielectric board 32 is composed of a third dielectric substrate 321, a fourth dielectric substrate 322, and a second left metal surface 323 and a second right metal surface 324 printed on both sides of the surface of the third dielectric substrate 321, and The metal-printed surface of the third dielectric substrate 321 is pasted together with the fourth dielectric substrate 322 .

Further, the first dielectric substrate 311 , the second dielectric substrate 312 , the third dielectric substrate 321 and the fourth dielectric substrate 322 are all rectangular, and a first upper rectangular through slot 3111 is opened above the center of the first dielectric substrate 311 . A second upper rectangular through groove 3121 is formed above the center of the second dielectric substrate 312 ; a first lower rectangular through groove 3211 is formed below the center of the third dielectric substrate 321 , and a second lower rectangular through groove is formed below the center of the fourth dielectric substrate 322 slot3221;

Further, the first upper rectangular through-slot 3111 and the second upper rectangular through-slot 3121 are attached, the first lower rectangular through-slot 3211 and the second lower rectangular through-slot 3221 are attached, and the upper and lower rectangular through-slots are vertical placed to form a criss-cross structure.

Further, the first left metal surface 313 is composed of an upper metal branch 3131, a lower metal branch 3132 and a metal branch 313;

Further, the first right metal surface 314 , the second left metal surface 323 , the second right metal surface 324 and the first left metal surface 313 have the same structure, and the first left metal surface 313 surrounds the center of the cross structure respectively. The shaft is rotated 180°, 90° clockwise and 90° counterclockwise.

Further, the upper metal branch 3131 is composed of three rectangular metal patches with the same size, the three metal patches are arranged in parallel from bottom to top, and the spacing between two adjacent patches is the same;

Further, the lower metal branch 3132 is located below the upper metal branch 3131, and is composed of five rectangular metal patches with the same size, these five metal patches are arranged in parallel from bottom to top, and the spacing between two adjacent patches is the same ;

Further, the metal branch 3133 is a rectangular metal column, located at one end of the three metal patches of the upper metal branch 3131 and the five metal patches of the lower metal branch 3132, for connecting the eight metal patches.

Further, the length L of the three metal patches in the upper metal branch 3131 of each reflection unit 3 is determined by the reflection phase value of the reflection unit 3; the five metal patches in the lower metal branch 3132 of each reflection unit 3 size is independent of the reflection phase value of the reflection unit 3, that is, the size of the lower metal branches 3132 in each reflection unit 3 is the same; the size of the metal branches 3133 of each reflection unit 3 is related to the reflection phase of the reflection unit 3 The value is irrelevant, that is, the size of the metal branches 3133 in each reflection unit 3 is the same.

Compared with the prior art, the present invention has the following advantages:

First, because the present invention adopts the reflection front composed of M×N reflection units with different reflection phases, within the working frequency band, the spherical electromagnetic wave radiated by the feed can be reflected as a plane electromagnetic wave, which ensures that the reflection array antenna radiates the surface electromagnetic wave. Gain, outside the operating frequency band, the radar detection wave will pass through the reflection front, so that the reflection array antenna has the characteristics of low radar cross section.

Second, since the reflecting unit of the present invention adopts a three-dimensional artificial surface plasmon structure formed by the cross of two laminated dielectric substrates with the same structure, it can regulate and control two polarized electromagnetic waves;

Third, the laminated dielectric substrate of the present invention is provided with four metal surfaces, and each metal surface includes a lower metal branch and an upper metal branch. Because the lower metal branch saves energy, the reflection unit has a band-stop characteristic. Therefore, within the working frequency band, the reflection unit has the characteristics of high reflection coefficient, which ensures the radiation efficiency of the reflect array antenna. Outside the working frequency band, the reflection unit has a transparent The characteristics of high wave efficiency enable the radar detection wave to pass through the reflection unit; at the same time, since the upper metal branch has little influence on the reflection and transmission characteristics of the reflection unit when adjusting the reflection phase of the reflection unit, the reflection units with different reflection phases are working. It has a high reflection coefficient in the frequency band and a high transmission coefficient outside the operating frequency band.

Description of drawings

Fig. 1 is the three-dimensional structure schematic diagram of the reflector antenna of the present invention;

Fig. 2 is the overall structure schematic diagram of each reflection unit in the present invention;

Fig. 3 is the layered structure schematic diagram of each reflection unit in the present invention;

Fig. 4 is the structural representation of the metal surface of the reflection array unit in the present invention;

5 is a graph showing the relationship between the length of the upper metal branch and its reflection phase of each reflection unit in Embodiment 1, Embodiment 2, and Embodiment 4 of the present invention;

俯仰角θ＝-180°～180°时的增益仿真结果图；Fig. 6 is the first three embodiments of the present invention at the frequency of 10.0GHz, the azimuth angle

The gain simulation result graph when the pitch angle θ=-180°～180°;

俯仰角θ＝-180°～180°时的增益仿真结果图；Fig. 7 is the azimuth angle of the first three embodiments of the present invention at the frequency of 10.0GHz

The gain simulation result graph when the pitch angle θ=-180°～180°;

俯仰角θ＝0°时的增益仿真结果图；Fig. 8 is the embodiment 1 and the embodiment 3 of the present invention in the frequency band range of 8.5GHz to 11.5GHz, azimuth angle

The gain simulation result graph when the pitch angle θ=0°;

俯仰角θ＝0°时的雷达散射截面仿真结果图；Fig. 9 is the azimuth angle of embodiment 1 and embodiment 3 of the present invention through the vertical incidence of x-polarized waves in the frequency band range of 1.0GHz to 22.0GHz

The simulation result of radar cross section when the pitch angle θ=0°;

俯仰角θ＝-20°时的雷达散射截面仿真结果图；Fig. 10 shows the azimuth angle of the x-polarized wave at 20° oblique incidence in the embodiment 1 and embodiment 3 of the present invention in the frequency band range of 1.0GHz to 22.0GHz

The simulation result of radar cross section when the pitch angle θ=-20°;

俯仰角θ＝-40°时的雷达散射截面仿真结果图。Fig. 11 shows the azimuth angle of the x-polarized wave with oblique incidence of x-polarized wave at 40° in the frequency band range of 1.0GHz to 22.0GHz according to Embodiment 1 and Embodiment 3 of the present invention

The simulation result of the radar cross section when the pitch angle θ=-40°.

Detailed ways

The specific embodiments and effects of the present invention will be described in further detail below with reference to the accompanying drawings.

1, the following four embodiments are provided:

Example 1

This embodiment includes a feed 1 and a reflection front 2, wherein the beam width of the feed 1 is 40°, the reflection front 2 is located directly below the feed 1, and the distance between the reflection front 2 and the phase center of the feed 1 f is 165.0mm, and the reflection front 2 is composed of 14×14 reflection units 3 with the same structure and different parameters. Each reflection unit 3 is crossed by a first laminated dielectric plate 31 and a second laminated dielectric plate 32 to form a three-dimensional artificial surface plasmon structure, as shown in FIG. 2 .

The reflection phase of each reflection unit 3 in the reflection front 2 is determined by the following formula:

Among them, φ _i is the reflection phase of the i-th reflection unit 3, where the value of i is from 1 to 14×14, the working wavelength λ in free space is 30.0mm, and R _i is from the phase center of feed 1 to The distance from the center of the _i -th reflection element 3, ri is the vector from the center of the reflection front 2 to the center of the i-th reflection element 3, and the unit vector r ₀ =(0,0,0) along the radiation direction of the reflection array antenna, φ ₀ is taken as 0°.

Referring to FIG. 3 , the first laminated dielectric 31 of each reflective unit 3 is composed of a first dielectric substrate 311 , a second dielectric substrate 312 and a first left metal surface 313 , a first left metal surface 313 printed on both sides of the surface of the first dielectric substrate 311 , a first The right metal surface 314 is formed, and the metal-printed surface of the first dielectric substrate 311 is pasted with the second dielectric substrate 312; The dielectric substrate 322 is composed of a second left metal surface 323 and a second right metal surface 324 printed on both sides of the surface of the third dielectric substrate 321 , and the printed metal surface of the third dielectric substrate 321 is pasted with the fourth dielectric substrate 322 together.

The first right metal surface 314 , the second left metal surface 323 , and the second right metal surface 324 have the same structure as the first left metal surface 313 , that is, the first right metal surface 314 is surrounded by the first left metal surface 313 The central axis of the structure is rotated by 180°, the second left metal surface 323 is formed by the first left metal surface 313 rotated 90° clockwise around the central axis of the cross structure, and the second right metal surface 324 is formed by the first left metal surface. 313 is formed by rotating 90° counterclockwise around the central axis of the cross structure;

The first dielectric substrate 311 , the second dielectric substrate 312 , the third dielectric substrate 321 and the fourth dielectric substrate 322 are all rectangular, and a first upper rectangular through slot 3111 is opened above the center of the first dielectric substrate 311 . A second upper rectangular through groove 3121 is opened above the center of the dielectric substrate 312 ; a first lower rectangular through groove 3211 is opened under the center of the third dielectric substrate 321 , and a second lower rectangular through groove 3221 is opened under the center of the fourth dielectric substrate 322 ;

The first upper rectangular through groove 3111 is attached to the second upper rectangular through slot 3121, the first lower rectangular through slot 3211 is attached to the second lower rectangular through slot 3221; the attached two upper rectangular through slots are attached to the The two lower rectangular through-grooves after being combined are placed vertically, and finally a crisscross structure as shown in FIG. 2 is formed.

The first dielectric substrate 311, the second dielectric substrate 312, the third dielectric substrate 321, and the fourth dielectric substrate 322 are all rectangular plates with a relative permittivity of 2.2, the thickness t is 0.5 mm, and the length w is all 17.0 mm, the height h is 8.0mm; the height of the first upper rectangular through slot 3111, the second upper rectangular through slot 3121, the first lower rectangular through slot 3211, and the first lower rectangular through slot 3221 in FIG. 3 are 0.5×h. 4.0mm, width 2×t are both 1.0mm.

4, the first left metal surface 313 is composed of an upper metal branch 3131, a lower metal branch 3132 and a metal branch 3133; wherein the upper metal branch 3131 is composed of three rectangular metal patches of the same size. The patches are arranged in parallel from bottom to top, and the distance between two adjacent patches is the same; the lower metal branch 3132 is located under the upper metal branch 3131, which is composed of five rectangular metal patches of the same size. Arranged in parallel from bottom to top, and the spacing between two adjacent patches is the same; the metal branch 3133 is a rectangular metal column, and the three metal patches on the upper metal branch 3131 and the five metal patches on the lower metal branch 3132 One end is used to connect the eight metal patches.

The distance g between the three metal patches in the upper metal branch 3131 is 0.5mm, the width b of each metal patch is 0.5mm, the length L is equal, and the length L of the three metal patches is Determined by the reflection phase of the reflection unit 3 _, the relationship between the upper metal branch length Li of the four metal surfaces of each reflection unit φ _i and the reflection phase φ _i is shown as the solid line in FIG. 5 .

The distance g between the five metal patches in the lower metal branch 3132 is 0.5mm, the width b of each metal patch is 0.5mm, the length a is 6.0mm, and each reflection unit 3 The size of the five metal patches in the lower metal branch 3132 has nothing to do with the reflection phase value of the reflection unit 3, that is, the size of the lower metal branch 3132 in each reflection unit 3 is the same; the lower metal branch 3132 is the same as the upper metal branch. The spacing g of 3131 is 0.5mm;

The width b and height 8×b+7×g of the metal branch 3133 are respectively 0.5mm and 7.5mm. And the size of the metal branch 3133 of each reflection unit 3 is independent of the reflection phase value of the reflection unit 3 , that is, the size of the metal branch 3133 in each reflection unit 3 is the same.

Example 2

The structure of this embodiment is the same as that of Embodiment 1, and only the following parameters are adjusted: the beam width of feed 1 is 35°, the distance f from the phase center of feed 1 to reflection front 2 is 188.0 mm, and the upper metal The widths of the three metal patches of the branch 3131 and the width b of the five metal patches of the lower metal branch 3132 are both 0.7 mm, the spacing of the three metal patches of the upper metal branch 3131 and the five metal patches of the lower metal branch 3132 The spacing between the patches, the spacing g between the upper metal branch 3131 and the lower metal branch 3132 are all 0.7mm, the width b and height 8×b+7×g of the metal branch 3133 are 0.7mm and 10.5mm respectively, the first dielectric substrate 311, the height h of the second dielectric substrate 312, the third dielectric substrate 321, and the fourth dielectric substrate 322 are all 11.2 mm, the first upper rectangular through slot 3111, the second upper rectangular through slot 3121, and the first lower rectangular through slot 3211 , The height of the first lower rectangular through slot 3221 is 0.5×h, and both are 5.6mm.

The reflection phase of each reflection unit is calculated according to formula <1>. Through simulation, the relationship between the upper metal branch length L _i of the four metal surfaces of each reflection unit i and its reflection phase φ _i is obtained as shown by the dotted line in FIG. 5 .

Example 3

The structure and parameters of this embodiment are the same as those of Embodiment 1, except that a metal plate with a size of 238 mm×238 mm is added below the reflection front 2 in Embodiment 1, and the metal plate is close to the reflection front 2 .

Example 4

The structure of this embodiment is the same as that of Embodiment 1, and only the following parameters are adjusted: wherein:

The beam width of feed 1 is 30°, the distance f from the phase center of feed 1 to reflection front 2 is 220.0 mm, the width of the three metal patches of the upper metal branch 3131 and the five metal patches of the lower metal branch 3132 The width b of the sheet is 0.3mm, the distance between the three metal patches of the upper metal branch 3131, the distance between the five metal patches of the lower metal branch 3132, and the distance g between the upper metal branch 3131 and the lower metal branch 3132 are 0.3mm, The width b and height 8×b+7×g of the metal branch 3133 are 0.3 mm and 4.5 mm, respectively, and the heights h of the first dielectric substrate 311 , the second dielectric substrate 312 , the third dielectric substrate 321 , and the fourth dielectric substrate 322 are 4.8mm, the first upper rectangular through slot 3111, the second upper rectangular through slot 3121, the first lower rectangular through slot 3211, and the first lower rectangular through slot 3221 are all 2.4 mm in height 0.5×h.

The reflection phase of each reflection unit is calculated according to formula <1>. Through simulation, the relationship between the upper metal branch length Li of the four metal surfaces of each reflection unit _{i and its reflection phase φ i is} obtained as shown by the dot-dash line in FIG. 5 .

The effect of the present invention can be further illustrated by the following simulation:

1. Simulation software:

Commercial Ansoft HFSS 15.0 software.

2. Simulation content:

俯仰角θ＝-180°～180°时，对本发明前三个实施例的辐射方向图进行仿真，结果如图6所示，其中实线为实施例1的辐射方向图，虚线为实施例2的辐射方向图，点划线为实施例3的辐射方向图。Simulation 1, at a frequency of 10.0 GHz, azimuth

When the pitch angle θ=-180°～180°, the radiation patterns of the first three embodiments of the present invention are simulated, and the results are shown in Fig. 6 , in which the solid line is the radiation pattern of Example 1, and the dotted line is Example 2 The radiation pattern of , the dot-dash line is the radiation pattern of Example 3.

It can be seen from FIG. 6 that the maximum gain of the radiation pattern of Example 1 is 25.2dB, and the side lobe is less than -18dB; the maximum gain of the radiation pattern of Example 2 is 24.3dB, and the side lobe is less than -16dB; the radiation of Example 3 The maximum gain of the pattern is 25.6dB and the side lobes are less than -18dB.

俯仰角θ＝-180°～180°时，对本发明前三个实施例的辐射方向图进行仿真，结果如图7所示，其中实线为实施例1的辐射方向图，虚线为实施例2的辐射方向图，点划线为实施例3的辐射方向图。Simulation 2, at a frequency of 10.0 GHz, azimuth

When the pitch angle θ=-180°～180°, the radiation patterns of the first three embodiments of the present invention are simulated, and the results are shown in Fig. 7, in which the solid line is the radiation pattern of Example 1, and the dotted line is Example 2 The radiation pattern of , the dot-dash line is the radiation pattern of Example 3.

It can be seen from FIG. 7 that the maximum gain of the radiation pattern of Example 1 is 25.2dB, and the side lobe is less than -17dB; the maximum gain of the radiation pattern of Example 2 is 24.3dB, and the side lobe is less than -15dB; the radiation direction of Example 3 The maximum gain of the figure is 25.6dB and the side lobes are less than -19dB.

The simulation results in Fig. 6 and Fig. 7 show that the different parameters of the feed source and the reflection unit will affect the maximum gain and side lobe of the antenna radiation pattern. Compared with the embodiment 3 with the metal plate, the maximum gain of the embodiment 1 only decreases. 0.4dB.

俯仰角θ＝0°时，对本发明实施例1和实施3的增益分别进行仿真，结果如图8所示，其中实线为实施例1的增益仿真结果，虚线为实施例3的增益仿真结果，由图8可得，实施例1的最大增益下降在1dB范围以内的工作频带范围为9.5～10.8GHz，对应的1dB工作带宽为12.8％，实施例3的最大增益下降在1dB范围以内的工作频带范围为9.5～11.1GHz，对应的1dB工作带宽为15.5％，相比于有金属板的实施例3，实施例1的1dB工作带宽仅下降2.7％。Simulation 3, in the frequency band from 8.5GHz to 11.5GHz, set the azimuth

When the pitch angle θ=0°, the gains of Embodiment 1 and Embodiment 3 of the present invention are simulated respectively, and the results are shown in Figure 8 , wherein the solid line is the gain simulation result of Embodiment 1, and the dotted line is the gain simulation result of Embodiment 3. , it can be seen from Fig. 8 that the working frequency band range where the maximum gain of Embodiment 1 is decreased within 1dB is 9.5 to 10.8GHz, the corresponding 1dB working bandwidth is 12.8%, and the maximum gain of Embodiment 3 is decreased within the range of 1dB. The frequency band ranges from 9.5 to 11.1 GHz, and the corresponding 1 dB working bandwidth is 15.5%. Compared with the third embodiment with the metal plate, the 1 dB working bandwidth of the first embodiment is only reduced by 2.7%.

俯仰角θ＝0°，对本发明的实施例1、实施3经x极化波垂直入射时的雷达散射截面分别进行仿真，结果如图9所示。其中，实线为实施例1的雷达散射截面仿真曲线，虚线为实施例3的雷达散射截面仿真曲线，由图9可得，实施例1在1.0～9.5GHz、12.5～22.0GHz的频带范围之内相比于实施例3具有雷达散射截面减缩的效果。Simulation 4, in the frequency band from 1.0GHz to 22.0GHz, set the azimuth

Elevation angle θ=0°, the radar scattering cross-section of Embodiment 1 and Embodiment 3 of the present invention when the x-polarized wave is vertically incident is simulated respectively, and the results are shown in FIG. 9 . Among them, the solid line is the simulation curve of the radar scattering cross section of Example 1, and the dotted line is the simulation curve of the radar scattering cross section of Example 3. It can be seen from FIG. 9 that Example 1 is between the frequency bands of 1.0-9.5 GHz and 12.5-22.0 GHz. Compared with Example 3, it has the effect of reducing the radar cross section.

俯仰角θ＝-20°，对本发明的实施例1、实施3经x极化波20°斜入射时的雷达散射截面分别进行仿真，结果如图10所示。其中，实线为实施例1的雷达散射截面仿真曲线，虚线为实施例3的雷达散射截面仿真曲线，由图10可得，实施例1在1.0～9.5GHz、12.5～22.0GHz的频带范围之内相比于实施例3具有雷达散射截面减缩的效果。Simulation 5, in the frequency band from 1.0GHz to 22.0GHz, set the azimuth

Elevation angle θ=-20°, the radar scattering cross-section of Embodiment 1 and Embodiment 3 of the present invention when the x-polarized wave is obliquely incident at 20° is simulated respectively, and the results are shown in Fig. 10 . Among them, the solid line is the simulation curve of the radar cross section of Example 1, and the dotted line is the simulation curve of the radar scattering cross section of Example 3. It can be seen from FIG. 10 that Example 1 is in the frequency band range of 1.0-9.5GHz and 12.5-22.0GHz. Compared with Example 3, it has the effect of reducing the radar cross section.

俯仰角θ＝-40°，对本发明的实施例1、实施3经x极化波40°斜入射时的雷达散射截面分别进行仿真，结果如图11所示。其中，实线为实施例1的雷达散射截面仿真曲线，虚线为实施例3的雷达散射截面仿真曲线，由图11可得，实施例1在1.0～9.5GHz、12.5～22.0GHz的频带范围之内相比于实施例3具有雷达散射截面减缩的效果。Simulation 6, in the frequency band from 1.0GHz to 22.0GHz, set the azimuth

Elevation angle θ=-40°, the radar scattering cross section of Embodiment 1 and Embodiment 3 of the present invention when the x-polarized wave is obliquely incident at 40° is simulated respectively, and the results are shown in Fig. 11 . Among them, the solid line is the simulation curve of the radar scattering cross section of Example 1, and the dotted line is the simulation curve of the radar scattering cross section of Example 3. It can be seen from FIG. 11 that Example 1 is between the frequency bands of 1.0-9.5 GHz and 12.5-22.0 GHz. Compared with Example 3, it has the effect of reducing the radar cross section.

Based on the above simulation results, Embodiment 1 achieves a wide-band, wide-angle-domain radar scattering cross-section reduction under the condition that the maximum gain and the 1dB operating bandwidth drop are smaller than those of Embodiment 3.

The above descriptions are only four embodiments of the present invention, and do not constitute any limitation to the present invention. Obviously, for those skilled in the art, after understanding the content and principles of the present invention, they may not deviate from the principles and structures of the present invention. Under the circumstance of the present invention, various corrections and changes in form and details are made, but these corrections and changes based on the idea of the present invention are still within the scope of the claims and protection of the present invention.

Claims (10)

1. An artificial surface plasmon-based low radar scattering cross-section reflectarray antenna, comprising a feed (1) and a reflection front (2), the reflection front (2) being composed of M×N structures The same reflection unit (3) with different parameters is formed, and is characterized in that: The reflection unit (3) adopts a cross-shaped structure, that is, a three-dimensional artificial surface plasmon structure formed by the cross of the first laminated dielectric plate (31) and the second laminated dielectric plate (32); The first laminated dielectric board (31) is composed of a first dielectric substrate (311), a second dielectric substrate (312) and a first left metal surface (313) printed on both sides of the surface of the first dielectric substrate (311). , a first right metal surface (314) is formed, and the metal-printed surface of the first dielectric substrate (311) is pasted together with the second dielectric substrate (312); The second laminated dielectric board (32) is composed of a third dielectric substrate (321), a fourth dielectric substrate (322) and a second left metal surface (323) printed on both sides of the surface of the third dielectric substrate (321). and a second right metal surface (324), and the metal-printed surface of the third dielectric substrate (321) is pasted together with the fourth dielectric substrate (322). 2. The antenna according to claim 1, wherein: The first dielectric substrate (311), the second dielectric substrate (312), the third dielectric substrate (321), and the fourth dielectric substrate (322) are all rectangular, and the center of the first dielectric substrate (311) is opened above the center. A first upper rectangular through groove (3111), a second upper rectangular through groove (3121) is opened above the center of the second dielectric substrate (312); a first lower rectangular through groove (3121) is opened under the center of the third dielectric substrate (321). 3211), a second lower rectangular through groove (3221) is opened under the center of the fourth dielectric substrate (322); The first upper rectangular through-slot (3111) is fitted with the second upper rectangular through-slot (3121), the first lower rectangular through-slot (3211) is fitted with the second lower rectangular through-slot (3221), and the upper and lower rectangular through slots (3221) are fitted together. Two rectangular through-slots are placed vertically to form a criss-cross structure. 3. The antenna according to claim 1, wherein: The first left metal surface (313) is composed of an upper metal branch (3131), a lower metal branch (3132) and a metal branch (3133); The first right metal surface (314), the second left metal surface (323), the second right metal surface (324) and the first left metal surface (313) have the same structure, and are formed by the first left metal surface ( 313) Rotate 180°, rotate 90° clockwise and rotate 90° counterclockwise around the central axis of the crisscross structure. 4. The antenna according to claim 3, wherein: The upper metal branch (3131) is composed of three rectangular metal patches with the same size, the three metal patches are arranged in parallel from bottom to top, and the spacing between two adjacent patches is the same; The lower metal branch (3132) is located below the upper metal branch (3131), and is composed of five rectangular metal patches of the same size, and the five metal patches are arranged in parallel from bottom to top, and two adjacent patches are arranged in parallel. the same spacing; The metal branch (3133) is a rectangular metal column, located at one end of the three metal patches of the upper metal branch (3131) and the five metal patches of the lower metal branch (3132), for attaching the eight metal patches. slices connected. 5. The antenna according to claim 1, wherein the first dielectric substrate (311), the second dielectric substrate (312), the third dielectric substrate (321), and the fourth dielectric substrate (322) use opposite For the rectangular plates with the same dielectric constant, the thickness t is 0.3-0.8 mm, the length w is 15.0-20.0 mm, and the height h is 4.8-11.2 mm. 6. The antenna according to claim 3, wherein: The spacing g between adjacent three metal patches in the upper metal branch (3131) is 0.3-0.7mm, the width b of each metal patch is 0.3-0.7mm, and the length L is 1.0- 7.0mm; The spacing g between the adjacent five metal patches in the lower metal branch (3132) is 0.3-0.7mm, the width b of each metal patch is 0.3-0.7mm, and the length a is 5.0- 7.0mm, the distance g between the lower metal branch (3132) and the upper metal branch (3131) is 0.3-0.7mm; The width b of the metal branch (3133) is 0.3-0.7 mm, and the height 8×b+7×g is 4.5-10.5 mm. 7. The antenna according to claim 2, wherein the first upper rectangular through slot (3111), the second upper rectangular through slot (3121), the first lower rectangular through slot (3211), the first lower The rectangular through grooves (3221) are both 2.4-5.6 mm in height 0.5×h, and 0.6-1.6 mm in width 2×t. 8 . The antenna according to claim 1 , wherein the reflection front ( 2 ) is located below the feed source ( 1 ), and the distance f from the feed source ( 1 ) is 165.0-220.0 mm. 9 . 9. The antenna according to claim 1, wherein the reflection phase of each reflection unit (3) is determined by the following formula:

where φ _i is the reflection phase of the ith reflection unit (3), where i ranges from 1 to M×N, λ is the operating wavelength in free space, and R _i is the phase from the feed (1) The distance from the center to the center of the _i -th reflection element (3), ri is the vector from the center of the reflection front (2) to the center of the i-th reflection element (3), and r ₀ is the unit vector along the radiation direction of the reflection array antenna , φ ₀ is an arbitrary degree. 10. The antenna according to claim 4, wherein: The length L of the three metal patches in the upper metal branch (3131) of each reflection unit (3) is determined by the reflection phase value of the reflection unit (3); The size of the five metal patches in the lower metal branch (3132) of each reflecting unit (3) is independent of the reflection phase value of the reflecting unit (3), that is, the lower metal branch (3132) in each reflecting unit (3) 3132) are the same size; The size of the metal branches (3133) of each reflection unit (3) is independent of the reflection phase value of the reflection unit (3), that is, the sizes of the metal branches (3133) in each reflection unit (3) are the same.

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