CN113009606A - Five-layer nano-material ultra-wideband perfect absorber and preparation method thereof - Google Patents
Five-layer nano-material ultra-wideband perfect absorber and preparation method thereof Download PDFInfo
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- CN113009606A CN113009606A CN202110158794.4A CN202110158794A CN113009606A CN 113009606 A CN113009606 A CN 113009606A CN 202110158794 A CN202110158794 A CN 202110158794A CN 113009606 A CN113009606 A CN 113009606A
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Abstract
The invention provides a five-layer nano-material ultra-wideband wave absorber and a preparation method thereof. The ultra-wideband perfect absorber comprises: a first metal layer; a dielectric layer disposed on the first metal layer; a second metal layer disposed on the dielectric layer; a gallium arsenide cylinder array disposed on the second metal layer; the titanium cylinder array is arranged on the gallium arsenide cylinder array, and the period of the titanium cylinder array is equal to that of the gallium arsenide cylinder array. The ultra-wideband perfect absorber provided by the invention has the advantages that the preparation process is simple and mature, the perfect absorption of visible light to a middle infrared band is realized, the thermal stability is realized, and the stability is also realized by changing the incident angle of light.
Description
Technical Field
The invention relates to the fields of light absorption, material preparation, energy and the like, in particular to a five-layer nano-material ultra-wideband perfect absorber and a preparation method thereof.
Background
The ultra-wideband perfect optical absorber is one of necessary devices for realizing efficient absorption of solar energy spectrum and broadband photoelectric detection, can realize efficient absorption of sunlight in a range from visible light to intermediate infrared wave bands, and has the principle that the phenomena of surface plasmon resonance, Fabry-Perot resonant cavity and spectral phase coupling or coherence cause the phenomenon of resonant induced light absorption or capture of light waves.
Landy et al realized the perfect absorption of single-frequency band light in the metal cracking ring for the first time in 2008, and with the development of theory and practice, people designed more wave absorbing devices. In 2009 HU Tao, on the basis of Landy et al experiments, semiconductor gallium arsenide is added, the achievement is expanded to a terahertz waveband, and perfect absorption of a single-frequency waveband is achieved. In 2010, Harad Giessen professor research group, liu et al. Huand et al achieved broadband light absorption using three i-shaped structures in 2012. The wave absorbers mainly comprise three layers of structures, and the absorption of specific wavelength is realized by manually controlling the size of the structures and the materials. However, the three-layer structure has the problems of low absorptivity, narrow absorption band and the like, and the wave-absorbing material is usually made of noble metal, so that the mass production and the application of the wave-absorbing material are limited.
Disclosure of Invention
The invention aims to provide a five-layer nano-material ultra-wideband perfect absorber and a preparation method thereof. The five-layer nano-material ultra-wideband perfect absorber achieves the effect of perfect absorption in the range from visible light to mid-infrared spectrum, and the invention is further explained.
The invention discloses an ultra-wideband perfect absorber, which comprises:
a first metal layer;
a dielectric layer disposed on the first metal layer;
a second metal layer disposed on the dielectric layer;
a gallium arsenide cylinder array disposed on the second metal layer;
the titanium cylinder array is arranged on the gallium arsenide cylinder array, and the period of the titanium cylinder array is equal to that of the gallium arsenide cylinder array.
Further, the first metal layer is made of titanium, the dielectric layer is made of aluminum oxide, and the second metal layer is made of titanium.
Further, the thickness of the first metal layer is 1-400 nanometers, the thickness of the dielectric layer is 100-200 nanometers, and the thickness of the second metal layer is 1-50 nanometers. Preferably, the thickness of the first metal layer is 200 nm, the thickness of the dielectric layer is 120 nm, and the thickness of the second metal layer is 20 nm.
Furthermore, the thickness of the titanium cylinder is 1-50 nanometers, and the thickness of the gallium arsenide cylinder is 80-240 nanometers. Preferably, the thickness of the titanium cylinder is 50 nanometers, and the thickness of the gallium arsenide cylinder is 200 nanometers.
Furthermore, the radius of the titanium cylinder is consistent with that of the gallium arsenide cylinder, and the radius of the titanium cylinder is 60-100 nanometers.
Furthermore, the distance between the centers of the adjacent gallium arsenide cylinders is 200-240 nanometers, namely the period of the gallium arsenide cylinder array is 220 nanometers. Preferably, the distance between adjacent centers of the gallium arsenide cylinders is 220 nanometers.
The preparation method of the five-layer nano-material ultra-wideband perfect absorber comprises the following steps:
(1) providing a flat clean substrate;
(2) depositing a first metal layer, a dielectric layer and a second metal layer on a substrate by using a deposition method;
(3) depositing a gallium arsenide layer on the second metal layer by using a deposition method;
(4) depositing a titanium layer on the gallium arsenide layer by using a deposition method;
(5) etching the titanium layer and the gallium arsenide layer by using a non-mask electron beam etching technology or a focused ion beam etching technology to obtain a titanium cylinder array and a gallium arsenide cylinder array;
(6) and cleaning with deionized water, absolute ethyl alcohol and acetone to obtain the ultra-wideband perfect absorber.
Further, the substrate is quartz, glass, a silicon wafer or an organic film.
Further, the first metal layer is made of titanium, the dielectric layer is made of aluminum oxide, and the second metal layer is made of titanium.
Further, the deposition method is one or a mixture of several methods of electrostatic spraying, magnetron sputtering, vacuum coating, metal thermal evaporation coating, laser pulse deposition, chemical plating, atomic layer deposition and electrochemical methods.
The invention has the beneficial effects that:
1. the whole ultra-wideband perfect absorber has the effect of high temperature resistance, and the melting points of titanium, gallium arsenide and aluminum oxide are 1668 ℃, 1238 ℃ and 2054 ℃ respectively, so that the proposed absorber has the characteristic of high temperature resistance and is wider in application range;
2. the ultra-wideband perfect absorber can realize perfect absorption of super-visible light to a middle infrared band, has stability even if the incident angle of light is changed, and has a bottom metal film exceeding 200 nanometers and can prevent the transmission of light;
3. plasmon resonance modes in a plurality of frequency ranges can be generated between adjacent cylinders, and further the perfect absorption characteristic of broadband electromagnetic waves is obtained;
4. the ultra-wideband perfect absorber has wide application prospect in the fields of solar cells, photoelectric detection, military affairs and the like;
5. the solar energy wave absorption response is more efficient, under the irradiation of incident light, nearly perfect absorption is achieved in a wide range of 513-3118 nanometers in wavelength, the wavelength range from visible light to middle infrared is larger than 1890nm in the wave band, the average absorbance of an absorption peak is 95%, and almost perfect absorption of light is achieved in the wave band;
6. the ultra-wideband perfect absorber has the advantages of simple structure, easiness in preparation, wide application range and the like.
Drawings
The present invention will be described in further detail below with reference to the accompanying drawings.
Figure 1 is a schematic (side view) of the structure of an ultra-wideband perfect absorber of the present invention.
Figure 2 is a schematic (perspective) view of the construction of an ultra-wideband perfect absorber of the present invention.
Figure 3 is an absorption spectrum of the ultra-wideband perfect absorber of example 1 of the present invention.
Fig. 4 is an absorption spectrum chart of the absorber of comparative example 1 and the ultra-wideband perfect absorbers of examples 2 and 3 of the present invention (corresponding to the thickness of the top titanium film (t1) of 0, 20 and 40).
FIG. 5 shows the ultra-wideband perfect absorbers (corresponding to the thickness (t) of the GaAs cylinder) of examples 4-6 of the present invention2) 80, 120, 160 nm).
Figure 6 is the absorption spectra of the absorber of comparative example 1 and the ultra-wideband perfect absorbers of example 7, example 1, example 8 of the present invention (corresponding to titanium and gallium arsenide cylinder radii (R) of 0, 60, 80, 100 nanometers).
FIG. 7 shows the absorber of comparative example 3 and the ultra-wideband perfect absorbers of examples 1 and 9 of the present invention (corresponding to the thickness (t) of the titanium intermediate layer3) 0, 20, 40 nm).
FIG. 8 shows the ultra-wideband perfect absorbers (corresponding to the thickness of alumina (t) in examples 1, 10 and 11 of the present invention4) 120, 160, 200 nm).
Figure 9 is a graph of the absorption spectra of the ultra-wideband perfect absorber of example 1 of the present invention at different incident light angles.
The reference signs explain: 1. the metal layer comprises a first metal layer, a second metal layer, a dielectric layer, a first metal layer, a second metal layer, a gallium arsenide cylinder, a second metal layer, a first metal layer, a second metal layer, a dielectric layer, a third metal layer, a fourth metal layer, a third metal.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
As shown in fig. 1 and 2, the ultra-wideband optical perfect absorber of the present invention comprises a flat three-layer film (a first metal layer 1, a dielectric layer 2, a second metal layer 3), an array of gallium arsenide cylinders 4, and an array of titanium cylinders 5; the center distance between adjacent cylinders is the period (P). As shown in fig. 2, the gallium arsenide cylinder 4 is tightly connected to the flat second metal film 3, and the titanium cylinder 5 is tightly connected to the gallium arsenide cylinder 4.
The preparation method of the ultra-wideband perfect absorber comprises the following steps:
(1) cleaning the flat substrate with a cleaning solution, then washing the substrate with deionized water, drying the substrate with nitrogen, and fixing the substrate in a deposition chamber;
(2) depositing a metal film layer with a specific thickness on a flat substrate by a magnetron sputtering method;
(3) depositing a dielectric film layer with a specific thickness by using a deposition method on the basis of the metal film layer obtained in the step (2) to form a metal-dielectric structure;
(4) depositing a metal film layer with a specific thickness on the metal-dielectric medium structure obtained in the step (3) by using a deposition method to form a metal-dielectric medium-metal film layer structure;
(5) depositing a dielectric film layer with a specific thickness by using a deposition method on the basis of the metal-dielectric-metal obtained in the step (4) to form a metal-dielectric-metal-dielectric structure;
(6) depositing a metal film layer with a specific thickness on the metal-dielectric-metal-dielectric film layer structure obtained in the step (5) by using a deposition method to form a metal-dielectric-metal film layer structure;
(7) etching the metal-dielectric-metal film layer structure obtained in the step (6) by using a mask-free electron beam etching and focused ion beam etching technology to obtain a periodic structure with periodically arranged cylinders;
(8) and (4) cleaning by using absolute ethyl alcohol and acetone on the basis of the step (7) to obtain the five-layer nano-material ultra-wideband perfect absorber.
Specifically, the flat substrate in step (1) may be quartz, glass, a silicon wafer, or an organic film.
Specifically, the deposition method may be one or a mixture of several methods selected from magnetron sputtering, vacuum coating, thermal metal evaporation coating, laser pulse deposition, chemical plating, atomic layer deposition, and electrochemical methods.
Example 1:
the ultra-wideband light perfect absorber of the embodiment is prepared according to the following steps: firstly, depositing a titanium film with the thickness of 200 nanometers, an aluminum oxide film with the thickness of 120 nanometers, a titanium film with the thickness of 20 nanometers, a gallium arsenide film (positioned on the second top layer) with the thickness of 200 nanometers and a titanium film (positioned on the top layer) with the thickness of 50 nanometers on a substrate silicon dioxide glass sheet by adopting a magnetron sputtering method; secondly, preparing a cylinder periodic structure on the top layer and the secondary top layer by adopting an electron beam etching technology, wherein the array period (P) is 220 nanometers, and the radius (R) of the cylinder is 80 nanometers.
The ultra-wideband light perfect absorber of example 1 was tested at normal incidence and with air as the surrounding medium, and the absorption spectrum shown in fig. 3 was obtained. As can be seen from fig. 3, the absorber achieves strong absorption with absorption greater than 90% in the visible to mid-infrared range from 1253 nm to 2955 nm, with a response bandwidth of 1702 nm and a maximum absorption of 99.6%.
When the angle of incidence of light is changed during the test, an absorption spectrum as shown in fig. 9 can be obtained. The change of the incident angle of light has little influence on the light absorption effect of the absorber, which proves that the ultra-wideband light perfect absorber has a better application range.
Example 2:
the ultra-wideband light perfect absorber in this example is essentially the same as example 1, except that the thickness of the top titanium cylinder film was changed to 20 nm.
Example 3:
the ultra-wideband light perfect absorber in this example is substantially the same as example 1 except that the thickness of the top titanium cylinder film was changed to 40 nm.
Comparative example 1:
the absorber of this comparative example was prepared as follows: firstly, depositing a layer of titanium film with the thickness of 200 nanometers, an aluminum oxide film with the thickness of 120 nanometers, a layer of titanium film with the thickness of 20 nanometers and a layer of gallium arsenide film with the thickness of 200 nanometers (positioned on the top layer) on a substrate silicon dioxide glass sheet by adopting a magnetron sputtering method, preparing a cylinder periodic structure on the top layer by utilizing an etching technology, wherein the array period (P) is 220 nanometers, and the radius (R) of a cylinder is 80 nanometers.
In contrast to examples 1-3, the absorber of comparative example 1 did not contain an array of titanium-containing cylinders. The ultra-wideband light perfect absorber of example 2, the ultra-wideband light perfect absorber of example 3, and the absorber of comparative example 1 were tested, respectively, and an absorption spectrum as shown in fig. 4 was obtained. As can be seen from fig. 4, when the thickness of the top titanium cylinder is not 0, the effect is better, which shows that the top titanium in the ultra-wideband perfect absorber provided by the invention can enhance the absorption of light.
Example 4:
the ultra-wideband light perfect absorber in this example is substantially the same as example 1 except that the thickness of the second-to-top gallium arsenide film is changed to 80 nm.
Example 5:
the ultra-wideband light perfect absorber in this example is substantially the same as example 1 except that the thickness of the second-to-top gallium arsenide film is changed to 120 nm.
Example 6:
the ultra-wideband light perfect absorber in this example is substantially the same as example 1 except that the thickness of the second-to-top gallium arsenide film is changed to 160 nm.
The ultra-wideband light perfect absorbers of examples 4-6 were tested to obtain the absorption spectra shown in FIG. 5.
Example 7:
the ultra-wideband light perfect absorber in this example is essentially the same as example 1, with the radii (R) of the titanium cylinder and the GaAs cylinder being varied1、R2) Is 60 nm.
Example 8:
the ultra-wideband light perfect absorber in this example is essentially the same as example 1, except that the radii (R) of the titanium cylinder and the GaAs cylinder are changed1、R2) Is 100 nm.
Comparative example 2:
the absorber of this comparative example was prepared as follows: firstly, a titanium film with the thickness of 200 nanometers, an aluminum oxide film with the thickness of 120 nanometers and a titanium film with the thickness of 20 nanometers are deposited on a silicon dioxide glass sheet of a substrate by adopting a magnetron sputtering method.
The ultra-wideband light perfect absorbers of example 1, example 7 and example 8, and the absorber of comparative example 2 were tested to obtain the absorption spectra shown in fig. 6. It can be seen that the absorption rate of the absorber is the best when the radius of the upper and lower layers of cylinders is 80 nm.
Example 9:
the ultra-wideband light perfect absorber in the embodiment is basically the same as that in the embodiment 1, and only the middle titanium film (t) is changed3) Is 40 nm.
Comparative example 3:
the absorber of this comparative example was prepared as follows: firstly, depositing a layer of titanium film with the thickness of 200 nanometers, an aluminum oxide film with the thickness of 120 nanometers, a layer of gallium arsenide film (positioned on the secondary top layer) with the thickness of 200 nanometers and a layer of titanium film (positioned on the top layer) with the thickness of 50 nanometers on a substrate silicon dioxide glass sheet by adopting a magnetron sputtering method; secondly, preparing a cylinder periodic structure on the top layer and the secondary top layer by adopting an electron beam etching technology, wherein the array period (P) is 220 nanometers, and the radius (R) of the cylinder is 80 nanometers.
In contrast to examples 1 and 9, the absorber of comparative example 1 does not contain an intermediate titanium film (t)3). The ultra-wideband light perfect absorber of example 1, the ultra-wideband light perfect absorber of example 9, and the absorber of comparative example 3 were tested, respectively, and an absorption spectrum as shown in fig. 7 was obtained. When the thickness (t) of the intermediate layer titanium film3) The absorption effect is best when the particle size is 20 nm. Titanium film (t)3) Plays a positive role in promoting light absorption.
Example 10:
the ultra-wideband light perfect absorber in this example is essentially the same as example 1 except that the thickness of the aluminum oxide film was changed to 160 nm.
Example 11:
the ultra-wideband light perfect absorber in this example is essentially the same as example 1, except that the thickness of the aluminum oxide film was changed to 200 nm.
The ultra-wideband light perfect absorbers of example 1, example 10 and example 11 were tested to obtain the absorption spectra shown in fig. 8.
TABLE 1 statistical tables of parameters of examples and comparative examples
Note: "-" means absent.
The foregoing is a more detailed description of the preferred embodiments of the invention, and the specific embodiments of the invention are not to be considered as limited to the details shown. For those skilled in the art to which the invention pertains, several simple deductions and substitutions can be made without departing from the spirit of the invention, and all shall be considered as belonging to the protection scope of the invention.
Claims (10)
1. An ultra-wideband perfect absorber, comprising:
a first metal layer;
a dielectric layer disposed on the first metal layer;
a second metal layer disposed on the dielectric layer;
a gallium arsenide cylinder array disposed on the second metal layer;
the titanium cylinder array is arranged on the gallium arsenide cylinder array, and the period of the titanium cylinder array is equal to that of the gallium arsenide cylinder array.
2. The ultra-wideband perfect absorber of claim 1, characterized in that: the first metal layer is made of titanium, the dielectric layer is made of aluminum oxide, and the second metal layer is made of titanium.
3. The ultra-wideband perfect absorber of claim 1 or 2, characterized in that: the thickness of the first metal layer is 1-400 nanometers, the thickness of the dielectric layer is 100-200 nanometers, and the thickness of the second metal layer is 1-50 nanometers.
4. The ultra-wideband perfect absorber of claim 3, characterized in that: the thickness of the titanium cylinder is 1-50 nanometers, and the thickness of the gallium arsenide cylinder is 80-240 nanometers.
5. The ultra-wideband perfect absorber of claim 4, wherein: the radius of the titanium cylinder is consistent with that of the gallium arsenide cylinder and is 60-100 nanometers.
6. The ultra-wideband perfect absorber of claim 5, wherein: the distance between the centers of the adjacent gallium arsenide cylinders is 220 nanometers.
7. The method of making an ultra-wideband perfect absorber of claim 1, comprising the steps of:
(1) providing a flat clean substrate;
(2) depositing a first metal layer, a dielectric layer and a second metal layer on a substrate by using a deposition method;
(3) depositing a gallium arsenide layer on the second metal layer by using a deposition method;
(4) depositing a titanium layer on the gallium arsenide layer by using a deposition method;
(5) etching the titanium layer and the gallium arsenide layer by using a non-mask electron beam etching technology or a focused ion beam etching technology to obtain a titanium cylinder array and a gallium arsenide cylinder array;
(6) and cleaning with deionized water, absolute ethyl alcohol and acetone to obtain the ultra-wideband perfect absorber.
8. The method of claim 7, wherein: the substrate is quartz, glass, a silicon wafer or an organic film.
9. The method of claim 7, wherein: the first metal layer is made of titanium, the dielectric layer is made of aluminum oxide, and the second metal layer is made of titanium.
10. The method of claim 7, wherein: the deposition method is one or a mixture of several methods of electrostatic spraying, magnetron sputtering, vacuum coating, metal thermal evaporation coating, laser pulse deposition, chemical plating, atomic layer deposition and electrochemical method.
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Application publication date: 20210622 |