CN105807353A - Broadband absorption and filtering structure for visible light and infrared wave bands and preparation method thereof - Google Patents

Broadband absorption and filtering structure for visible light and infrared wave bands and preparation method thereof Download PDF

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Publication number
CN105807353A
CN105807353A CN201610347841.9A CN201610347841A CN105807353A CN 105807353 A CN105807353 A CN 105807353A CN 201610347841 A CN201610347841 A CN 201610347841A CN 105807353 A CN105807353 A CN 105807353A
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infrared band
absorption
thickness
metal
visible ray
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罗明辉
周云
陈林森
叶燕
刘艳花
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Svg Optronics Co ltd
Suzhou University
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Svg Optronics Co ltd
Suzhou University
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    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00Optical elements other than lenses
    • G02B5/20Filters
    • G02B5/22Absorbing filters

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  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
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Abstract

The invention discloses a broadband absorption and filtering structure of visible light and infrared wave bands, which comprises: the dielectric grating layer is 80-119nm thick, the period is not more than 400nm, the duty ratio is 0.1-0.4, and in the first metal covering layer and the second metal covering layer, the imaginary part of the dielectric constant is larger than the absolute value of the real part of the dielectric constant. The invention also discloses a preparation method of the broadband absorption filtering structure. The invention has simple structure, high absorption efficiency in wide incident angle variation range and insensitivity to polarization state of incident light. The structure can be applied to solar energy absorption of wide wave bands such as solar cells, thermophotovoltaics and the like, and can also provide a solution for realizing black color without ink printing.

Description

Broadband absorption filtering structure of visible ray and infrared band and preparation method thereof
Technical field
The present invention relates to a kind of optical lightscreening element, be specifically related to a kind of visible ray and infrared band Broadband absorption filtering structure and preparation method thereof, can be applicable to light show, photovoltaic, the sun Can battery and without fields such as ink printings.
Background technology
Broadband absorption based on visible ray and infrared band be mainly used in stealthy, heat emission, Light shows, photovoltaic, solaode and without fields such as ink printings.As at print field, pass The printing technology of system uses the ink printing of different colours to publish picture picture and color, exists and is prone to fade Problem, and ink comprises the harmful materials such as heavy metal, benzene, ketone.Existing Few, only at broadband (wavelength to realizing black research without ink-printing techniques Realize high efficiency in the range of 400-700nm) to absorb, and the polarization state that absorption characteristic is to incident illumination Insensitive with angle of incidence, just can realize black.In area of solar cell, improve absorption efficiency Means be focused primarily on ARC and high-performance absorption aspect, traditional medium moth eye knot Structure can not well act on whole solar energy spectral limit, and its nothing as anti-reflection structure Method reaches the characteristic of high-selenium corn as a light absorption device.Solaode absorption spectra scope Generally 300-1100nm, on solar cell application, the micro-nano structure of existing design Complicated process of preparation, and absorption efficiency is the highest, it is impossible to large-scale application is in commercial production.
The Chinese patent application of Application No. 201410810447.5 discloses a kind of broadband light Hypersorption device and preparation method thereof.This light hypersorption device is the most successively by metallic diaphragm, Jie Plasma membrane layer, metal nanoparticle film layer three-decker composition altogether.Application No. 201410245684.1 Chinese patent application disclose a kind of colored solar battery, it includes Dorsum electrode layer, the active layer being arranged on dorsum electrode layer and the filtering being arranged on active layer Layer, wherein, described wave filtering layer includes medium covering and is arranged on the dielectric grating in medium covering, Described wave filtering layer carries out narrowband modulation to the reflection light of battery surface in full gamut, so that battery Surface presents different colors.The Chinese patent application of Application No. 201510469463.7 is public Opened ultra broadband absorber of a kind of Visible-to-Near InfaRed wave band and preparation method thereof, absorber by Substrate, bottom metal absorbed layer, germanium layer/metal absorption layer alternate membrane top germanium layer and top The three slice width wave band antireflective film layers that the above refractive index of portion's germanium layer is gradually reduced.
Absorb for realizing the high efficiency of ultra wide wave band polarization insensitive, Ken Xingze Wang etc. People proposed a kind of antireflection in 2012 and light falls into nanometer circular cone grating [1], is used for strengthening silicon too The absorption of sun energy battery.Qiuqun Liang in 2013 et al. proposes metal nano pyramid battle array Array structure is as solar collector [2].This structure is alternately stacked by Aurum metallicum and germanium, forms gold Word tower structure, it is achieved wide angle (60 °) broadband of atmospheric radiation scope (0.2-2.5 μm) High-selenium corn.In recent years, many possesses the structure of the absorption characteristic of biobelt, many bands, is recognized as Can apply in solar absorption.The fillet proposed such as Sencer Ayas in 2015 et al. Nanometer square array structure [3].This structure is made up of silver grating, aluminium oxide, silverskin, it is achieved double Band absorbs.2016, Batuhan Mulla et al. proposed symmetrical expression metal resonance structure [4], It is made up of upper strata metal resonators, medium silicon dioxide and orlop aluminum film.Many bandwidth can be realized Angular absorption.
These above-mentioned problems existing for existing technology are:
(1) structure designed is the most complicated, preparation technology difficulty, it is impossible to give birth on a large scale Produce;
(2) for realizing polarization insensitive, the structure of design mostly uses two-dimensional array to arrange, Seriously limit preparation technology;
(3) sensitive to the angle of incidence of incident illumination, change with angle, absorption efficiency is degenerated serious;
(4) current solar energy broadband absorption device is mainly for visible light wave range, infrared The absorption efficiency of wave band is on the low side;
(5) in biobelt, many bands absorption system, absorption efficiency exists uneven, absorption spectra At the trough of line extremely inefficient.
List of references:
[1] Wang, Ken Xingze, et al. " Absorption enhancement in ultrathin crystalline silicon solar cells with antireflection and light-trapping Nanocone gratings. " Nano letters 12.3 (2012): 1616-1619.
[2] Liang, Qiuqun, et al. " Numerical study of the meta-nanopyramid array As efficient solar energy absorber. " Optical Materials Express 3.8 (2013): 1187-1196.
[3] Ayas, Sencer, Gokhan Bakan, and Aykutlu Dana. " Rounding corners of nano-square patches for multispectral plasmonic metamaterial absorbers.″ Optics express 23.9 (2015): 11763-11770.
[4] Mulla, Batuhan, and Cumali Sabah. " Multiband Metamaterial Absorber Design Based on Plasmonic Resonances for Solar Energy Harvesting. " Plasmonics (2016): 1-9.
Summary of the invention
In order to solve above-mentioned technical problem, the invention provides a kind of visible ray and infrared band Broadband absorption filtering structure and preparation method thereof, its simple in construction, change at wide angle of incidence Scope absorption efficiency is high (more than 90%, reach as high as nearly 100%), and the polarization to incident illumination State is insensitive.
In order to achieve the above object, technical scheme is as follows:
The broadband absorption filtering structure of visible ray and infrared band, comprising:
Substrate;
Metal level, it is arranged in substrate;
Dielectric grating layer, it is arranged on metal level, and the thickness of this dielectric grating layer is 80-119nm, cycle are not more than 400nm, dutycycle between 0.1-0.4;
First metal cladding, it is arranged on dielectric grating layer, in this first metal cladding, The imaginary part of its dielectric constant is more than the absolute value of the real part of its dielectric constant;
Dielectric passivation, it is arranged on the first metal cladding;
Second metal cladding, it is arranged on dielectric passivation, in this second metal cladding, The imaginary part of its dielectric constant is more than the absolute value of the real part of its dielectric constant.
Further, the refractive index of above-mentioned substrate is between 1.4-1.6.
Further, the thickness of above-mentioned metal level more than visible and infrared band light at metal level On skin depth.
Further, the thickness of above-mentioned metal level is not less than 40nm.
Further, above-mentioned dielectric grating layer is one-dimensional medium grating layer.
Further, above-mentioned dielectric grating layer is bar shaped.
Further, the first above-mentioned metal cladding is covered in the spine of dielectric grating layer, groove In portion and sidewall.
Further, the thickness of the first above-mentioned metal cladding is 2-10nm.
Further, above-mentioned dielectric passivation is covered in the spine of the first metal cladding, groove In portion and sidewall.
Further, the thickness of above-mentioned dielectric passivation is 20-50nm, and refractive index is at 1.4-1.6 Between.
Further, the second above-mentioned metal cladding is covered in the spine of dielectric passivation, groove In portion and sidewall.
Further, the thickness of the second above-mentioned metal cladding is 2-10nm.
The preparation method of the broadband absorption filtering structure of visible ray and infrared band, it include with Lower step:
1) substrate is prepared;
2) by physical deposition method, metal level is arranged in substrate;
3) by photoetching method or exposure method, dielectric grating layer is arranged on metal level;
4) by physical deposition method, the first metal cladding is arranged on dielectric grating layer;
5) by atomic layer deposition method, chemical plating method, electrochemical method one or more Dielectric passivation is arranged on the first metal cladding by mixing;
6) by physical deposition method, the second metal cladding is arranged on dielectric passivation.
Present invention advantage compared with prior art is:
1. the present invention is used for visible ray and infrared band;
2. the present invention is more than 90% in ultra wide wave band (300-1200nm) scope average absorption efficiency, Maximum absorption efficiency is close to 100%;
3. the present invention is good in wide angle of incidence excursion absorption characteristic, and light is in the range of 0~45 degree During change, absorption efficiency is averagely still greater than 90%;
4. the present invention is insensitive to the polarization state of incident illumination.
Accompanying drawing explanation
Fig. 1 is the structural representation of the broadband absorption filtering structure of the visible ray of the present invention and infrared band Figure.
Fig. 2 is the broadband absorption filtering structure of visible ray and infrared band in the embodiment of the present invention one The absorption spectrum of TM polarized light and incident angle, the graph of a relation of incident wavelength.
Fig. 3 is the broadband absorption filtering structure of visible ray and infrared band in the embodiment of the present invention one The absorption spectrum of TE polarized light and incident angle, the graph of a relation of incident wavelength.
Fig. 4 is the broadband absorption filtering structure of visible ray and infrared band in the embodiment of the present invention two The absorption spectrum of TM polarized light and the cycle of one-dimensional medium grating, the graph of a relation of incident wavelength.
Fig. 5 is the broadband absorption filtering structure of visible ray and infrared band in the embodiment of the present invention two The absorption spectrum of TE polarized light and the cycle of one-dimensional medium grating, the graph of a relation of incident wavelength.
Fig. 6 is the broadband absorption filtering structure of visible ray and infrared band in the embodiment of the present invention three The absorption spectrum of TM polarized light and the dutycycle of one-dimensional medium grating, the graph of a relation of incident wavelength.
Fig. 7 is the broadband absorption filtering structure of visible ray and infrared band in the embodiment of the present invention three The absorption spectrum of TE polarized light and the dutycycle of one-dimensional medium grating, the graph of a relation of incident wavelength.
Fig. 8 is the broadband absorption filtering structure of visible ray and infrared band in the embodiment of the present invention four The absorption spectrum of TM polarized light and the thickness of one-dimensional medium grating, the graph of a relation of incident wavelength.
Fig. 9 is the broadband absorption filtering structure of visible ray and infrared band in the embodiment of the present invention four The absorption spectrum of TE polarized light and the thickness of one-dimensional medium grating, the graph of a relation of incident wavelength.
Figure 10 is the broadband absorption filtering structure of visible ray and infrared band in the embodiment of the present invention five Absorption spectrum and the thickness of grating residual layer, the graph of a relation of incident wavelength of TM polarized light.
Figure 11 is the broadband absorption filtering structure of visible ray and infrared band in the embodiment of the present invention five Absorption spectrum and the thickness of grating residual layer, the graph of a relation of incident wavelength of TE polarized light.
Figure 12 is the broadband absorption filtering structure of visible ray and infrared band in the embodiment of the present invention six Absorption spectrum and the thickness of metal cladding, the graph of a relation of incident wavelength of TM polarized light.
Figure 13 is the broadband absorption filtering structure of visible ray and infrared band in the embodiment of the present invention six Absorption spectrum and the thickness of metal cladding, the graph of a relation of incident wavelength of TE polarized light.
Figure 14 is the broadband absorption filtering structure of visible ray and infrared band in the embodiment of the present invention seven Absorption spectrum and the thickness of dielectric passivation, the graph of a relation of incident wavelength of TM polarized light.
Figure 15 is the broadband absorption filtering structure of visible ray and infrared band in the embodiment of the present invention seven Absorption spectrum and the thickness of dielectric passivation, the graph of a relation of incident wavelength of TE polarized light.
Figure 16 is the broadband absorption filtering structure of visible ray and infrared band in the embodiment of the present invention eight Absorption spectrum and the thickness of metal cladding, the graph of a relation of incident wavelength of TM polarized light.
Figure 17 is the broadband absorption filtering structure of visible ray and infrared band in the embodiment of the present invention eight Absorption spectrum and the thickness of metal cladding, the graph of a relation of incident wavelength of TE polarized light.
Figure 18 is the broadband absorption filtering structure of visible ray and infrared band in the embodiment of the present invention nine Absorption spectrum and different metal covering layer material, the graph of a relation of incident wavelength of TM polarized light.
Figure 19 is the broadband absorption filtering structure of visible ray and infrared band in the embodiment of the present invention nine Absorption spectrum and different metal covering layer material, the graph of a relation of incident wavelength of TE polarized light.
Figure 20 is the broadband absorption filtering structure of visible ray and infrared band in the embodiment of the present invention ten Absorption spectrum and different metal layer material, the graph of a relation of incident wavelength of TM polarized light.
Figure 21 is the broadband absorption filtering structure of visible ray and infrared band in the embodiment of the present invention ten Absorption spectrum and different metal layer material, the graph of a relation of incident wavelength of TE polarized light.
Detailed description of the invention
Describe the preferred embodiment of the present invention below in conjunction with the accompanying drawings in detail.
The visible ray of present invention proposition and the section of the broadband absorption filtering structure of infrared band Structure as it is shown in figure 1, include substrate 110, metal level 120, one-dimensional medium grating layer 130, Dielectric grating residual layer the 140, first metal cladding 150, dielectric passivation 160 and second Metal cladding 170.The material of substrate 110 is clear flexible material, such as polyester (PET), Merlon (PC), polrvinyl chloride (PVC), polymethyl methacrylate (PMMA) Or polypropylene (BOPP) etc..Metal level 120 is positioned in substrate 110, and its material is such as Aluminum, silver, copper, tungsten, nickel, chromium or titanium, can use physical deposition method to prepare, such as Vacuum Deposition One in embrane method, metal fever evaporation coating method, magnetron sputtering method, pulse laser deposition or Several mixing.Metal level 120 plays the effect of reflecting mirror, in order to ensure the reflection efficiency of light, The thickness h 1 of this metal level 120 more than the light of visible and infrared band on this metal material Skin depth, in one embodiment, the thickness h 1 of this metal level 120 is 100nm. One-dimensional medium grating layer 130 is positioned on metal level 120, can use beamwriter lithography, ion beam Prepared by photoetching, ultraviolet photolithographic, the mode of ultraviolet holographic exposure, large-scale production can use mould Plate preparation and the method for nano impression.Its material is similarly transparent flexible material, such as PMMA, The thickness h 3 of this one-dimensional medium grating layer 130 is between 80-110nm, and period p is less than 400nm, dutycycle F is between 0.1-0.4, and dielectric grating residual layer 140 thickness h 2 exists Between 20-60nm, in one more preferably scheme, this one-dimensional medium grating layer 130 thickness h 3 For 100nm, period p is 300nm, and dutycycle F is 0.2, dielectric grating residual layer 140 Thickness h 2 is 50nm.First metal cladding 150 is positioned on one-dimensional medium grating layer 130, Its material is such as tungsten, nickel, chromium or titanium, and physical deposition method can be used to prepare, such as Vacuum Deposition One in embrane method, metal fever evaporation coating method, magnetron sputtering method, pulse laser deposition or Several mixing.In one more preferably scheme, the first metal cladding 150 thickness h 4 is 5nm. Dielectric passivation 160 is positioned on the first metal cladding 150, and its material is silicon dioxide or saturating Bright flexible material, can use the one of atomic layer deposition method, chemical plating method, electrochemical method Or several be mixed with.In one more preferably scheme, this dielectric passivation 160 thickness h 5 For 35nm.Second metal cladding 170 is positioned on dielectric passivation 160, and its material is such as It is tungsten, nickel, chromium or titanium, physical deposition method can be used to prepare, such as Vacuum Coating method, metal One or more mixing in thermal evaporation coating method, magnetron sputtering method, pulse laser deposition. In one more preferably scheme, this dielectric passivation 170 thickness h 6 is 4nm.In the present invention The nearly perfect absorbing structure of broadband in, the first metal cladding 150 and dielectric passivation 170 Select the bandwidth of nearly perfect absorbing structure is played a decisive role.When the first metal cladding 150 With the imaginary part of the dielectric constant of the second metal cladding 170 more than real part absolute of dielectric constant During value, by selecting the cycle of suitable dielectric grating, thickness, dutycycle, can be achieved with width Band (300~1200nm) wide angle excursion (0-45 degree) high efficiency absorbs (the biggest In 90%, reach as high as 100%), and insensitive to the polarization state of incident illumination.This structure is only One-dimensional grating structure need to be used just can to realize the characteristic of polarization insensitive, only need to be in conjunction with coating process Can realize with micro-nano technology, photoetching process, preparation technology is simple, it is easy to prepare on a large scale.
As it is shown in figure 1, the cycle of one-dimensional medium grating layer 130 is p, spine's width is w, Dutycycle F=w/p, thickness is h3, and dielectric grating residual layer thickness is h2.Below in conjunction with tool The invention will be further described for body embodiment, in these embodiments enumerated, although pertain only to Tungsten, crome metal and metallic nickel, but its metal meeting application claims should also be as In the protection that the present invention is advocated, such as Titanium etc., therefore the present invention meets this to other The metal of bright requirement will enumerate the most one by one.
Embodiment one:
Substrate 110 is flexible material PET or PC, metal level 120, covering metal level 150 With 170 be all tungsten, one-dimensional medium grating layer 130 and grating residual layer 140 be PMMA, be situated between Matter cover layer 160 is silicon dioxide.Metal level 120 thickness h 1 is 100nm, and grating remains Layer 140 thickness h 2 are 50nm, and one-dimensional medium grating layer 130 thickness h 3 is 100nm, week Phase p is 300nm, and dutycycle F is 0.2, and the first metal cladding 150 thickness h 4 is 5nm, Dielectric passivation 160 thickness h 5 is 35nm, and the second metal cladding 170 thickness h 6 is 4nm. Use the absorption characteristic of rigorous coupled wave approach (RCWA) perfect absorbing structure near to broadband And angle tolerance is analyzed.Due to the surface plasma resonance of metal level and light with The momentum matching of surface period structure, by more light local in the structure, causes broadband Light wave high efficiency absorbs.TM and TE polarized light is incident from this structural top, angle of light degree 0 degree to 45 degree range.
The absorption of the TM polarized light of the nearly perfect absorbing structure of broadband that Fig. 2 designs for the present invention Spectrum and incident angle, the graph of a relation of incident wavelength.Figure it is seen that 300nm-1200nm wave band, during TM polarized light vertical incidence, the absorption efficiency of described structure Almost 100%, when light changes in the range of 0~45 degree, absorption efficiency is still greater than 85%.
The absorption of the TE polarized light of the nearly perfect absorbing structure of broadband that Fig. 3 designs for the present invention Spectrum and incident angle, the graph of a relation of incident wavelength.From figure 3, it can be seen that 300nm-1200nm wave band, during TE polarized light vertical incidence, the absorption efficiency of described structure is put down Equal more than 90%, when light changes in the range of 0~45 degree, absorption efficiency is still greater than 70%.
Therefore, described structure is insensitive to the polarization state of incident illumination, and in wide range (0~45 Degree) there is the absorption efficiency more than 70%.Apply this structure in solar cells, can capture Major part solar energy.Using this structure in without ink printing, human eye is at 0~60 degree of visual angle In the range of observe black.
Embodiment two:
In the present embodiment, adjusting the period p of one-dimensional medium grating 130, p is being less than 400nm range, observes the mechanical periodicity impact on the absorption spectrum of this structure, other knots Structure parameter is identical with embodiment one.TM and TE polarized light is incident from this structural top, the most just Being to say, incident angle is 0 degree.
The absorption of the TM polarized light of the nearly perfect absorbing structure of broadband that Fig. 4 designs for the present invention Spectrum and the period p of one-dimensional medium grating 130, the graph of a relation of incident wavelength.Permissible from Fig. 4 Finding out, the cycle produces impact to the absorption efficiency of this structure, when the cycle is 300nm, absorbs Efficiency is averagely higher than 90%, and maximum absorption efficiency is close to 100%, when the cycle is 100nm, inhales Rate of producing effects is on the low side.
The absorption of the TE polarized light of the nearly perfect absorbing structure of broadband that Fig. 5 designs for the present invention Spectrum and the period p of one-dimensional medium grating 130, the graph of a relation of incident wavelength.Permissible from Fig. 5 Finding out, the cycle produces impact to the absorption efficiency of this structure, when the cycle is 300nm, absorbs Efficiency is higher than 85%, and maximum absorption efficiency is close to 100%, when the cycle is less than 300nm, absorbs Efficiency is on the low side.When cycle is higher than 300nm, maximum absorption efficiency is less than at cycle 300nm.
Embodiment three:
In the present embodiment, adjusting dutycycle F of one-dimensional medium grating 130, F is at 0.1-0.7 Range, observes the change in duty cycle impact on the absorption spectrum of this structure, and other structures are joined Number is identical with embodiment one.TM and TE polarized light is incident from this structural top, say, that Incident angle is 0 degree.
The absorption of the TM polarized light of the nearly perfect absorbing structure of broadband that Fig. 6 designs for the present invention Spectrum and dutycycle F of one-dimensional medium grating 130, the graph of a relation of incident wavelength.Can from Fig. 6 To find out, dutycycle produces impact to the absorption efficiency of this structure, when dutycycle is less than 0.2, Absorption efficiency is high, but bandwidth reduces;When dutycycle is more than 0.2, along with dutycycle is gradually increased, Bandwidth is gradually reduced, and absorption efficiency substantially reduces.
The absorption of the TE polarized light of the nearly perfect absorbing structure of broadband that Fig. 7 designs for the present invention Spectrum and dutycycle F of one-dimensional medium grating 130, the graph of a relation of incident wavelength.Can from Fig. 7 To find out, dutycycle produces impact to the absorption efficiency of this structure, when dutycycle F is 0.2, Maximum absorption efficiency is close to 100%, and minimum absorption efficiency is more than 85%.Along with dutycycle gradually Increasing, absorption efficiency is gradually lowered.
Embodiment four:
In the present embodiment, adjust the thickness h 3 of one-dimensional medium grating 130, observe h3 and become Changing the impact of the absorption spectrum on this structure, other structural parameters are identical with embodiment one.TM Incident from this structural top with TE polarized light, say, that incident angle is 0 degree.
The absorption of the TM polarized light of the nearly perfect absorbing structure of broadband that Fig. 8 designs for the present invention Spectrum and the thickness h 3 of one-dimensional medium grating 130, the graph of a relation of incident wavelength.Permissible from Fig. 8 Finding out, the thickness h 3 of one-dimensional medium grating 130 produces impact to the absorption efficiency of this structure, When h3 is 100nm, the bandwidth of absorption efficiency is maximum, absorption efficiency substantially more than 95%, When h3 deviates 100nm, Absorber Bandwidth and efficiency all produce substantially reduction.
The absorption of the TE polarized light of the nearly perfect absorbing structure of broadband that Fig. 9 designs for the present invention Spectrum and the thickness h 3 of one-dimensional medium grating 130, the graph of a relation of incident wavelength.Permissible from Fig. 9 Finding out, the thickness h 3 of one-dimensional medium grating 130 produces impact to the absorption efficiency of this structure, When h2 is less than 100nm, absorption efficiency and bandwidth are on the low side, when h3 is more than 100nm, absorb effect Rate and bandwidth contributions are little, it is considered to h3 is for the impact of TM efficiency of light absorption, more preferably, The thickness h 3 of this one-dimensional medium grating 130 is 100nm.
Embodiment five:
In the present embodiment, adjust the thickness h 2 of grating residual layer 140, observe h2 change Impact on the absorption spectrum of this structure, other structural parameters are identical with embodiment one.TM and TE polarized light is incident from this structural top, say, that incident angle is 0 degree.
The suction of the TM polarized light of the nearly perfect absorbing structure of broadband that Figure 10 designs for the present invention Receive spectrum and the thickness h 2 of grating residual layer 140, the graph of a relation of incident wavelength.Can from Figure 10 To find out, the thickness h 2 of grating residual layer 140 produces impact to the absorption efficiency of this structure, When h2 is 50nm, absorption efficiency is the highest, and close to 100%, and bandwidth is the widest.
The absorption of the TE polarized light of the nearly perfect absorbing structure of broadband that Figure 11 designs for the present invention Spectrum and the thickness h 2 of grating residual layer 140, the graph of a relation of incident wavelength.Permissible from Figure 11 Finding out, the thickness h 2 of grating residual layer 140 produces impact, h2 to the absorption efficiency of this structure During less than 50nm, absorption efficiency is the highest at visible light wave range, but on the low side at infrared band, h2 More than 50nm, absorb on the low side at visible light wave range, more preferably, this grating residual layer 140 Thickness h 2 is 50nm.
Embodiment six:
In the present embodiment, adjust the thickness h 4 of the first metal cladding 150, observe h4 Changing the impact of the absorption spectrum on this structure, other structural parameters are identical with embodiment one.TM Incident from this structural top with TE polarized light, say, that incident angle is 0 degree.
The suction of the TM polarized light of the nearly perfect absorbing structure of broadband that Figure 12 designs for the present invention Receive spectrum and the thickness h 4 of metal cladding 140, the graph of a relation of incident wavelength.Can from Figure 12 To find out, the thickness h 4 of the first metal cladding 150 produces shadow to the absorption efficiency of this structure Ringing, when h4 is less than 4nm, absorption efficiency reduces, and when h4 is more than 4nm, absorption efficiency affects Not quite.
The absorption of the TE polarized light of the nearly perfect absorbing structure of broadband that Figure 13 designs for the present invention Spectrum and the thickness h 4 of metal cladding 140, the graph of a relation of incident wavelength.Permissible from Figure 13 Finding out, the thickness h 4 of the first metal cladding 150 produces impact to the absorption efficiency of this structure, When h4 is more than 4nm, efficiency is gradually lowered, in conjunction with the first metal cladding 150 along with h4 increases The thickness h 4 absorption spectrum to TM polarized light, more preferably, the first metal cladding 150 Thickness h 4 be 5nm.
Embodiment seven:
In the present embodiment, adjust the thickness h 5 of dielectric passivation 160, observe h5 change Impact on the absorption spectrum of this structure, other structural parameters are identical with embodiment one.TM and TE polarized light is incident from this structural top, say, that incident angle is 0 degree.
The suction of the TM polarized light of the nearly perfect absorbing structure of broadband that Figure 14 designs for the present invention Receive spectrum and the thickness h 5 of dielectric passivation 160, the graph of a relation of incident wavelength.Can from Figure 14 To find out, the thickness h 5 of dielectric passivation 160 produces impact to the absorption efficiency of this structure, H5 is gradually increased, and absorption efficiency slightly reduces, and Absorber Bandwidth slightly increases, more preferably, and medium The thickness h 5 of cover layer 160 is 35nm.
The absorption of the TE polarized light of the nearly perfect absorbing structure of broadband that Figure 15 designs for the present invention Spectrum and the thickness h 5 of dielectric passivation 160, the graph of a relation of incident wavelength.Permissible from Figure 15 Finding out, the thickness h 5 of dielectric passivation 160 produces impact, h5 to the absorption efficiency of this structure Being gradually increased, bandwidth and absorption efficiency all increase.The thickness h 5 of binding medium cover layer 160 Absorption spectrum to TM polarized light, more preferably, the thickness h 5 of dielectric passivation 160 is 35nm.
Embodiment eight:
In the present embodiment, adjust the thickness h 6 of the second metal cladding 170, observe h6 Changing the impact of the absorption spectrum on this structure, other structural parameters are identical with embodiment one.TM Incident from this structural top with TE polarized light, say, that incident angle is 0 degree.
The suction of the TM polarized light of the nearly perfect absorbing structure of broadband that Figure 16 designs for the present invention Receive spectrum and the thickness h 6 of the second metal cladding 170, the graph of a relation of incident wavelength.From figure 16 it can be seen that the absorption efficiency of this structure is produced by the thickness h 6 of the second metal cladding 170 Raw impact, when h6 is less than 4nm, bandwidth reduces, and absorption efficiency improves, when h6 is more than 4nm, Bandwidth increases, and absorption efficiency reduces.
The absorption of the TE polarized light of the nearly perfect absorbing structure of broadband that Figure 17 designs for the present invention Spectrum and the thickness h 6 of the second metal cladding 170, the graph of a relation of incident wavelength.From Figure 17 It can be seen that the absorption efficiency of this structure is produced by the thickness h 6 of the second metal cladding 170 Impact, h6 is gradually increased, and absorption efficiency is gradually lowered, in conjunction with the second metal cladding 170 The thickness h 6 absorption efficiency to this TM polarized light, more preferably, the second metal cladding 170 Thickness h 6 be 4nm.
Embodiment nine:
In the present embodiment, change the material of the second metal cladding 170, respectively tungsten, Nickel, chromium, observe the different materials impact closely on the absorption spectrum of perfect absorbing structure.Other knots Structure parameter is identical with embodiment one.By rigorous coupled wave approach (RCWA) to different second The absorption characteristic of the nearly perfect absorbing structure of metal cladding 170 material is analyzed.TM and TE Polarized light is incident from this structural top, say, that incident angle is 0 degree.
Figure 18, Figure 19 are respectively the TM of the nearly perfect absorbing structure of broadband of present invention design Polarized light, absorption spectrum and different second metal cladding 170 materials of TE polarized light, enter The graph of a relation of ejected wave length.It can be seen that under identical Parameter Conditions, simultaneously TM and The high efficiency of TE polarized light sees that wave band absorbs, and the absorption characteristic of tungsten is better than well nickel and chromium.
Embodiment ten:
In the present embodiment, the material of change metal level 120, respectively aluminum, copper, tungsten, Observe the different materials impact closely on the absorption spectrum of perfect absorbing structure.Other structural parameters with Embodiment one is identical.By rigorous coupled wave approach (RCWA) to different metal layer 120 material Expect that the absorption characteristic of nearly perfect absorbing structure is analyzed.TM and TE polarized light is from this structure Top is incident, say, that incident angle is 0 degree.
Figure 20, Figure 21 are respectively the TM of the nearly perfect absorbing structure of broadband of present invention design Polarized light, absorption spectrum and different metal layer 120 material of TE polarized light, incident wavelength Graph of a relation.It can be seen that under identical Parameter Conditions, TM and TE polarized light simultaneously High efficiency see that wave band absorbs, the absorption characteristic of tungsten is better than well aluminum and copper.
In sum, the present invention proposes a kind of closely perfection suction for visible ray and infrared band The filtering structure received, this filtering structure (is more than at wide angle of incidence excursion absorption efficiency height 90%, reach as high as nearly 100%), and insensitive to the polarization state of incident illumination.This structure can Apply in the broadband solar absorption such as solaode, thermal photovoltaic, it is also possible to ink for oil-free Brush realizes black and provides solution, and this structure uses one-dimensional grating design, multilamellar cover layer Mode, preparation technology is simple.
Above-described is only the preferred embodiment of the present invention, it is noted that for this area Those of ordinary skill for, without departing from the concept of the premise of the invention, it is also possible to do Going out some deformation and improvement, these broadly fall into protection scope of the present invention.

Claims (13)

1. the broadband absorption filtering structure of visible ray and infrared band, it is characterised in that bag Include:
Substrate;
Metal level, it is arranged in described substrate;
Dielectric grating layer, it is arranged on described metal level, and the thickness of described dielectric grating layer is 80-119nm, cycle are not more than 400nm, dutycycle between 0.1-0.4;
First metal cladding, it is arranged on described dielectric grating layer, and described first metal covers In Ceng, the imaginary part of its dielectric constant is more than the absolute value of the real part of its dielectric constant;
Dielectric passivation, it is arranged on described first metal cladding;
Second metal cladding, it is arranged on described dielectric passivation, and described second metal covers In Ceng, the imaginary part of its dielectric constant is more than the absolute value of the real part of its dielectric constant.
Broadband absorption for visible ray and infrared band the most according to claim 1 filters Structure, it is characterised in that the refractive index of described substrate is between 1.4-1.6.
The broadband absorption filtering structure of visible ray the most according to claim 1 and infrared band, It is characterized in that, the thickness of described metal level more than visible and infrared band light on described metal level Skin depth.
4. filter according to the broadband absorption of the visible ray described in claim 1 or 3 and infrared band and tie Structure, it is characterised in that the thickness of described metal level is not less than 40nm.
The broadband absorption filtering structure of visible ray the most according to claim 1 and infrared band, It is characterized in that, described dielectric grating layer is one-dimensional medium grating layer.
The broadband absorption filtering structure of visible ray the most according to claim 1 and infrared band, It is characterized in that, described dielectric grating layer is bar shaped.
The broadband absorption filtering structure of visible ray the most according to claim 1 and infrared band, It is characterized in that, described first metal cladding is covered in the spine of described dielectric grating layer, groove portion With on sidewall.
8. filter according to the broadband absorption of the visible ray described in claim 1 or 7 and infrared band and tie Structure, it is characterised in that the thickness of described first metal cladding is 2-10nm.
The broadband absorption filtering structure of visible ray the most according to claim 1 and infrared band, It is characterized in that, described dielectric passivation is covered in the spine of described first metal cladding, groove portion With on sidewall.
10. filter according to the broadband absorption of the visible ray described in claim 1 or 9 and infrared band Structure, it is characterised in that the thickness of described dielectric passivation is 20-50nm, and refractive index is at 1.4-1.6 Between.
The broadband absorption of 11. visible rays according to claim 1 and infrared band filters and ties Structure, it is characterised in that described second metal cladding be covered in described dielectric passivation spine, In groove portion and sidewall.
12. filter according to the broadband absorption of the visible ray described in claim 1 or 11 and infrared band Structure, it is characterised in that the thickness of described second metal cladding is 2-10nm.
The preparation method of the broadband absorption filtering structure of 13. visible rays and infrared band, its feature exists In, comprise the following steps:
1) substrate is prepared;
2) by physical deposition method, metal level is arranged in described substrate;
3) by photoetching method or exposure method, dielectric grating layer is arranged on described metal level;
4) by physical deposition method, the first metal cladding is arranged on described dielectric grating layer;
5) by atomic layer deposition method, chemical plating method, one or more mixing of electrochemical method Dielectric passivation is arranged on described first metal cladding;
6) by physical deposition method, the second metal cladding is arranged on described dielectric passivation.
CN201610347841.9A 2016-05-24 2016-05-24 Broadband absorption and filtering structure for visible light and infrared wave bands and preparation method thereof Pending CN105807353A (en)

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CN107065052A (en) * 2017-06-12 2017-08-18 山东师范大学 A kind of displacement grating, the glass stealthy to visible ray all band
CN107065052B (en) * 2017-06-12 2019-05-28 山东师范大学 A kind of displacement grating, to the glass of visible light all band stealth
CN107404834A (en) * 2017-08-29 2017-11-28 苏州苏大维格光电科技股份有限公司 Electro-magnetic wave absorption structure and preparation method thereof
CN111164469A (en) * 2017-10-03 2020-05-15 日本板硝子株式会社 Optical filter and image pickup apparatus
CN108594340A (en) * 2018-04-09 2018-09-28 东南大学 A kind of wide-angle wide range flexibility antireflection film and preparation method
CN109085669B (en) * 2018-08-14 2020-09-29 深圳市融光纳米科技有限公司 Conical array broadband absorber and preparation method thereof
CN109085669A (en) * 2018-08-14 2018-12-25 深圳市融光纳米科技有限公司 A kind of tapered array broad band absorber and preparation method thereof
CN109887943A (en) * 2019-03-05 2019-06-14 西安工业大学 The wide spectrum multiband detecting structure and preparation method thereof of selective absorbing enhancing
CN110426784A (en) * 2019-07-08 2019-11-08 武汉大学 A kind of dual wavelength filter part based on micro-nano grating array and micro-nano F-P cavity structure
CN111208651A (en) * 2019-07-22 2020-05-29 神亚科技股份有限公司 Imaging system
CN113311520A (en) * 2020-02-26 2021-08-27 中移(上海)信息通信科技有限公司 Visible light-near infrared wave band light wave absorber and manufacturing method thereof
CN113311520B (en) * 2020-02-26 2023-08-01 中移(上海)信息通信科技有限公司 Light wave absorber of visible light-near infrared band and manufacturing method thereof
CN113359219A (en) * 2021-05-12 2021-09-07 上海交通大学烟台信息技术研究院 Two-dimensional periodic symmetry grating spectrum filtering optical film
CN113359219B (en) * 2021-05-12 2023-04-07 上海交通大学烟台信息技术研究院 Two-dimensional periodic symmetry grating spectrum filtering optical film

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Application publication date: 20160727